CN105442036A - Monocrystalline silicon growth furnace vacuum supporting system - Google Patents
Monocrystalline silicon growth furnace vacuum supporting system Download PDFInfo
- Publication number
- CN105442036A CN105442036A CN201510875224.1A CN201510875224A CN105442036A CN 105442036 A CN105442036 A CN 105442036A CN 201510875224 A CN201510875224 A CN 201510875224A CN 105442036 A CN105442036 A CN 105442036A
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- CN
- China
- Prior art keywords
- main
- valve
- furnace chamber
- vacuum pump
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
A monocrystalline silicon growth furnace vacuum supporting system comprises a main furnace chamber, a main vacuum pump, an auxiliary vacuum pump, a main valve, an auxiliary valve, an isolation valve and an upper furnace chamber, wherein the main furnace chamber is connected with the main vacuum pump through the main valve and connected with the upper furnace chamber through the isolation valve, and the upper furnace chamber is connected with the auxiliary vacuum pump through the auxiliary valve. When main vacuum supporting fails, auxiliary vacuum supporting can be applied, and safety is higher.
Description
Technical field
The present invention relates to single crystal furnace equipment, particularly a kind of monocrystalline silicon growing furnace vacuum supporting system.
Background technology
In prior art, monocrystalline silicon growing furnace vacuum supporting system does not have auxiliary vacuum support usually, once vacuum supporting system breaks down, easily makes long brilliant failure, causes greater loss; In addition, after seeding failure, also cannot change seed crystal, this crystal pulling can only be terminated, cause greater loss; Vacuum supporting system is not furnished with hay tank, and oxide compound directly enters vacuum pump, causes detrimentally affect to vacuum pump; When main vacuum pump surprisingly stops, oxide compound refluxes into furnace chamber, pollutes the silicon single crystal ingot grown.
Summary of the invention
The object of the present invention is to provide a kind of monocrystalline silicon growing furnace vacuum supporting system, when main vacuum support exists fault, can use auxiliary vacuum support, security is higher.
For solving the problems of the technologies described above, the present invention includes: main furnace chamber, main vacuum pump, auxiliary vacuum pump, main valve, auxiliary valve, segregaion valve and upper furnace chamber, wherein: main furnace chamber is connected with main vacuum pump by main valve, be connected with upper furnace chamber by segregaion valve, upper furnace chamber is connected with auxiliary vacuum pump by auxiliary valve.
Be provided with hay tank between described main furnace chamber and main vacuum pump, this hay tank comprises: tank body, the oxidation valve be connected with the main valve of main furnace chamber, the back blow port be connected with main vacuum pump and sewage draining exit.
The main valve place of described main furnace chamber is provided with butterfly valve.
Described main vacuum pump place is provided with valve for pressure difference.
The main and auxiliary two-way vacuum of the present invention is supported, when main vacuum support exists fault, can use auxiliary vacuum support, security is higher; Secondly, after segregaion valve cuts out, main furnace chamber keeps vacuum state, when upper furnace chamber needs to vacuumize separately, can use auxiliary vacuum support; In addition, main vacuum support is furnished with hay tank, can filter the oxide compound in main vacuum-lines, prevents oxide compound from directly entering main vacuum pump, causes detrimentally affect to main vacuum pump; Meanwhile, hay tank inner oxide can realize automatic cleaning; Also have main vacuum pump front end to be furnished with valve for pressure difference, when main vacuum pump surprisingly stops, preventing oxide compound from refluxing into furnace chamber and pollute the silicon single crystal ingot grown.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
As shown in Figure 1, the present embodiment comprises: main furnace chamber 8, main vacuum pump 9, auxiliary vacuum pump 10, main valve V1, auxiliary valve V7, segregaion valve 11 and upper furnace chamber 12, wherein: main furnace chamber 8 is connected with main vacuum pump 9 by main valve V1, be connected with upper furnace chamber 12 by segregaion valve 11, upper furnace chamber 12 is connected with auxiliary vacuum pump 10 by auxiliary valve V7.
Be provided with hay tank between described main furnace chamber 8 and main vacuum pump 9, this hay tank comprises: tank body 13, the oxidation valve V3 be connected with the main valve V1 of main furnace chamber 8, the back blow port V5 be connected with main vacuum pump 9 and sewage draining exit V4.
The main valve V1 place of described main furnace chamber 8 is provided with butterfly valve V2.
Described main vacuum pump 9 place is provided with valve for pressure difference V6.
When main furnace chamber 8 works, run main vacuum support, main valve V1 and the butterfly valve V2 of main furnace chamber 8 open, and auxiliary valve V7 closes, and oxidation valve V3, sewage draining exit V4 and back blow port V5 are in closure state, and valve for pressure difference V6 is in folding condition.Main vacuum pump 9 is connected with hay tank, can filter out from the oxide fine particle the main vacuum-lines of main furnace chamber 8 suction, prevent oxide compound from directly entering main vacuum pump 9, cause detrimentally affect to main vacuum pump 9; When main vacuum pump 9 surprisingly stops, valve for pressure difference V6 closes at once, can prevent oxide compound from refluxing into main furnace chamber 8.
When main furnace chamber 8 does not work, can clear up hay tank.The main valve V1 of main furnace chamber 8 and butterfly valve V2 closes, and separates main vacuum pump 9 and main furnace chamber 8, opens oxidation valve V3, air is allowed slowly to enter hay tank, with the dust inside oxidation filter, after about 3 hours, open back blow port V5 again, connect pressurized air, filter core is cleaned in blowback.Then open sewage draining exit V4, use suction cleaner to clean out the oxide fine particle blown off by pressurized air.
When main vacuum pump 9 exists fault, close the main valve V1 of main furnace chamber 8, open auxiliary valve V7, use auxiliary vacuum pump 10 to continue to vacuumize; In addition, after seeding failure, can close segregaion valve 11, make main furnace chamber 8 keep vacuum state, main vacuum pump 9 continues to run, then opens furnace chamber 12 and change seed crystal, then opens auxiliary valve V7, uses auxiliary vacuum pump 10 to vacuumize separately upper furnace chamber 12.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art can also make all equivalent modification or replacement under the prerequisite without prejudice to the invention spirit, and these equivalent modifications or replacement are all included in the application's claim limited range.
Claims (4)
1. a monocrystalline silicon growing furnace vacuum supporting system, it is characterized in that, comprise: main furnace chamber, main vacuum pump, auxiliary vacuum pump, main valve, auxiliary valve, segregaion valve and upper furnace chamber, wherein: main furnace chamber is connected with main vacuum pump by main valve, be connected with upper furnace chamber by segregaion valve, upper furnace chamber is connected with auxiliary vacuum pump by auxiliary valve.
2. system according to claim 1, is characterized in that, be provided with hay tank between described main furnace chamber and main vacuum pump, this hay tank comprises: tank body, the oxidation valve be connected with the main valve of main furnace chamber, the back blow port be connected with main vacuum pump and sewage draining exit.
3. system according to claim 1 and 2, is characterized in that, the main valve place of described main furnace chamber is provided with butterfly valve.
4. system according to claim 3, is characterized in that, described main vacuum pump place is provided with valve for pressure difference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510875224.1A CN105442036A (en) | 2015-12-02 | 2015-12-02 | Monocrystalline silicon growth furnace vacuum supporting system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510875224.1A CN105442036A (en) | 2015-12-02 | 2015-12-02 | Monocrystalline silicon growth furnace vacuum supporting system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105442036A true CN105442036A (en) | 2016-03-30 |
Family
ID=55552653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510875224.1A Pending CN105442036A (en) | 2015-12-02 | 2015-12-02 | Monocrystalline silicon growth furnace vacuum supporting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105442036A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023179648A1 (en) * | 2022-03-23 | 2023-09-28 | 高景太阳能股份有限公司 | Control system and method for energy-saving and continuous maintenance of vacuum pump |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07265684A (en) * | 1994-03-31 | 1995-10-17 | Komatsu Electron Metals Co Ltd | Vacuum pump system and control method for vacuum pump system |
| CN101709503A (en) * | 2009-05-11 | 2010-05-19 | 南安市三晶阳光电力有限公司 | Method for prolonging service life of vacuum pump of single crystal furnace |
| CN201815207U (en) * | 2010-04-29 | 2011-05-04 | 杭州富通半导体设备科技有限公司 | Filter of vacuum system of single-crystal furnace |
| CN201855640U (en) * | 2010-10-23 | 2011-06-08 | 浙江硅宏电子科技有限公司 | Vacuum filtering tank |
| CN202072806U (en) * | 2011-04-11 | 2011-12-14 | 江苏宝佳太阳能发展有限公司 | Vacuum system of single crystal furnace |
| CN102352529A (en) * | 2011-09-30 | 2012-02-15 | 上海汉虹精密机械有限公司 | Double-upper furnace body continuous charging silicon single crystal furnace and application method thereof |
| CN104005081A (en) * | 2014-05-28 | 2014-08-27 | 上海卡姆丹克太阳能科技有限公司 | Blowing-out cooling system and process of single crystal furnace |
| CN104548806A (en) * | 2014-12-24 | 2015-04-29 | 北京优势同翔科技有限公司 | Single crystal furnace vacuum filtering device and cleaning method thereof |
-
2015
- 2015-12-02 CN CN201510875224.1A patent/CN105442036A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| JPH07265684A (en) * | 1994-03-31 | 1995-10-17 | Komatsu Electron Metals Co Ltd | Vacuum pump system and control method for vacuum pump system |
| CN101709503A (en) * | 2009-05-11 | 2010-05-19 | 南安市三晶阳光电力有限公司 | Method for prolonging service life of vacuum pump of single crystal furnace |
| CN201815207U (en) * | 2010-04-29 | 2011-05-04 | 杭州富通半导体设备科技有限公司 | Filter of vacuum system of single-crystal furnace |
| CN201855640U (en) * | 2010-10-23 | 2011-06-08 | 浙江硅宏电子科技有限公司 | Vacuum filtering tank |
| CN202072806U (en) * | 2011-04-11 | 2011-12-14 | 江苏宝佳太阳能发展有限公司 | Vacuum system of single crystal furnace |
| CN102352529A (en) * | 2011-09-30 | 2012-02-15 | 上海汉虹精密机械有限公司 | Double-upper furnace body continuous charging silicon single crystal furnace and application method thereof |
| CN104005081A (en) * | 2014-05-28 | 2014-08-27 | 上海卡姆丹克太阳能科技有限公司 | Blowing-out cooling system and process of single crystal furnace |
| CN104548806A (en) * | 2014-12-24 | 2015-04-29 | 北京优势同翔科技有限公司 | Single crystal furnace vacuum filtering device and cleaning method thereof |
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| 李留臣 等: "TDR-70A型单晶炉真空系统与充气系统设计", 《真空》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023179648A1 (en) * | 2022-03-23 | 2023-09-28 | 高景太阳能股份有限公司 | Control system and method for energy-saving and continuous maintenance of vacuum pump |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160330 |