CN105428456A - 具有量子阱结构的双结叠层GaAs电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种具有量子阱结构的双结叠层GaAs电池及其制备方法，采用金属有机化学气相沉积法MOCVD，外延制备含有AlAs/GaAs的Bragg反射器、InGaAs量子阱的InGaAs/InGaAs双结激光电池，并包含氧化铝、氧化钛的双层减反射膜系。更大限度地实现了激光电池在响应光谱内的转换效率。
Description
技术领域
本发明涉及物理电源技术领域，具体说，是一种具有量子阱结构的双结叠层GaAs电池及其制备方法。
背景技术
作为无线传输的激光具有高能量密度、方向性好、抗干扰能力强、相对传输能量损失低等优点，现今激光供能光电转换技术越来越成为理想的解决方案,在航空航天、国防、电力、无线电通讯、工业界得到越来越广泛的应用；特别在空间无线能量传输领域有很大的应用前景，适合在空间无线传输中，作为能量接收器使用或信号接收器使用。
在国防领域,激光供能系统可以提供完全隔离的传感器和控制电路、武器和保险启动电路的电源和光纤信号通道,由于光纤不受电磁干扰的影响,增加了控制电路启动电路的可靠性和保密性；激光供能系统解决了有源传感设备的电池需定期更换的问题,减少了维护成本；光纤重量轻,利于武器的轻便化升级改造。串联微型激光GaAs电池已经在核武器领域作为引信使用。
激光光电转换的工作原理是基于半导体PN结构的光生伏特效应,又称光伏效应。光伏效应是指当微电池受到光照射时,在电池内部产生光生电动势的现象。
常用激光(功率密度5-50W/cm2，0.79～0.85μm的波长)在单一波长范围内均有着较强的分布,要想在这样强的能量入射范围内尽可能多地吸收激光能量,并将其转化为电能而不是晶格振动等其他热能,仅仅采用单结电池是难以充分实现的。
发明内容
本发明所要解决的技术问题是，提供一种实现多结激光电池的具有量子阱结构的双结叠层GaAs电池及其制备方法。
为了解决上述技术问题，本发明采用的技术方案是：一种具有量子阱结构的双结叠层GaAs电池的制备方法，采用金属有机化学气相沉积法MOCVD，在GaAs/Ge衬底上面依次生长AlAs/GaAs的Bragg反射器、InGaAs量子阱、第一结InGaAs子电池、隧穿结、第二结InGaAs子电池、盖帽层，具体包括以下步骤：
(1)在GaAs/Ge衬底上，外延生长InGaAs缓冲层；
(2)外延生长AlAs/GaAs的Bragg反射器；
(3)外延生长InGaAs量子阱；
(4)外延生长第一结InGaAs子电池：依次生长GaInP背场、InxGa1-xAs基区、InxGa1-xAs发射区、GaInP窗口层；
(5)外延生长隧穿结：依次生长InxGa1-xAs层和p型InxGa1-xAs层；
(6)外延生长第二结InGaAs子电池：依次生长GaInP背场、InxGa1-xAs基区、InxGa1-xAs发射区、GaInP窗口层；
(7)外延生长盖帽层；
(8)制作电池上下电极；
(9)制备电池减反射膜。
步骤(1)中所述GaAs/Ge衬底为采用n型掺杂的GaAs/Ge衬底，其厚度为200-600μm，掺杂浓度为1×1017～1×1018cm-3；并外延生长InGaAs缓冲层，其厚度为500-1000nm；步骤(2)中所述外延生长AlAs/GaAs的Bragg反射器，其中AlAs/GaAs交替生长10-20层，AlAs层厚度50-70nm，GaAs层厚度60-80nm。
步骤(3)中所述外延生长InGaAs量子阱中：掺杂浓度为1.0～1.5×1018cm-3的n型AlGaAs垒层，厚度为1000～1500nm；无掺的AlGaAs限制层，厚度为0.1～0.2μm；高应变InxGa1-xAs量子阱，0.2≤x≤0.5，厚度5～15nm；无掺的AlGaAs限制层，厚度为100～150nm。
步骤(4)中所述外延生长第一结InGaAs子电池中：掺杂浓度为1×1017～1×1018cm-3的n型GaInP背场，厚度为50～400nm；掺杂浓度为1×1016～1×1018cm-3的n型InxGa1-xAs基区，厚度为1000～5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1019cm-3的p型InxGa1-xAs发射区，厚度为100～500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1018cm-3的n型GaInP窗口层，厚度为50～400nm。
步骤(5)中所述外延生长隧穿结：依次生长掺杂浓度为1×1017～1×1018cm-3的n型InxGa1-xAs层和p型InxGa1-xAs层，其中0.3≤x≤0.6，厚度为50～150nm。
步骤(6)中所述外延生长第二结InGaAs子电池：掺杂浓度为1×1017～1×1018cm-3的n型GaInP背场，厚度为50～400nm；掺杂浓度为1×1016～1×1018cm-3的n型InxGa1-xAs基区，厚度为1000～5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1019cm-3的p型InxGa1-xAs发射区，厚度为100～500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1018cm-3的n型GaInP窗口层，厚度为50～400nm。
步骤(7)中所述外延生长盖帽层：掺杂浓度为1×1018～1×1019cm-3的n型GaAs重掺层，厚度为100～200nm。
8、根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(8)中通过蒸镀制备电池上下电极。
步骤(9)中制备电池减反射膜：在电池表面蒸镀氧化铝、氧化钛的双层减反射膜，其中氧化铝厚度20～70nm，氧化钛氧化铝厚度20～70nm。
上述制备方法制备的具有量子阱结构的双结叠层GaAs电池。
本发明的有益效果是：
1、本发明由于将能够吸收不同激光能量的单结电池堆叠起来,形成叠层结构，其中对应激光波长最大响应的单结电池材料及结构是实现多结激光电池的关键。这样构成的多结激光电池,能够充分转化激光能量,而且还提高了单位波长区间内的光电转换效率,是激光光电转换设计理念的一次进步。
2、本发明由于在电池有源区通过MOCVD生长量子阱结构增加对应激光波长的响应吸收，最后在电池底部生长Bragg反射器结构增强对激光的进一步吸收。
3、本发明由于采用双层减反射面设计，达到在790-850nm波长范围内反射率小于5％，增强激光吸收。
具体实施方式
下面结合具体实施方式对本发明作进一步详细说明：
本发明具有量子阱结构的双结叠层GaAs电池的制备方法，包括以下步骤：
通过MOCVD外延制备双结叠层GaAs电池。
采用MOCVD即金属有机化学气相沉积技术在GaAs/Ge衬底上面依次生长AlAs/GaAs的Bragg反射器、InGaAs量子阱、第一结InGaAs子电池、隧穿结、第二结InGaAs子电池、盖帽层。
1、采用n型掺杂的GaAs/Ge衬底，其厚度为200-600μm，掺杂浓度为1×1017-1×1018cm-3。
2、外延生长InGaAs缓冲层。
3、外延生长AlAs/GaAs的Bragg反射器，其中AlAs/GaAs交替生长10-20层，AlAs层厚度50-70nm，GaAs层厚度60-80nm。
4、外延生长InGaAs量子阱：掺杂浓度为1.0-1.5×1018cm-3的n型AlGaAs垒层，厚度为1000-1500nm；无掺的AlGaAs限制层，厚度为0.1-0.2μm；高应变InxGa1-xAs量子阱，0.2≤x≤0.5，厚度5-15nm；无掺的AlGaAs限制层，厚度为100-150nm。
5、外延生长第一结InGaAs子电池：掺杂浓度为1×1017-1×1018cm-3的n型GaInP背场，厚度为50-400nm；掺杂浓度为1×1016-1×1018cm-3的n型InxGa1-xAs基区，厚度为1000-5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017-1×1019cm-3的p型InxGa1-xAs发射区，厚度为100-500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017-1×1018cm-3的n型GaInP窗口层，厚度为50-400nm。
6、外延生长隧穿结：依次生长掺杂浓度为1×1017-1×1018cm-3的n型InxGa1-xAs层和p型InxGa1-xAs层，其中0.3≤x≤0.6，厚度为50-150nm。
7、外延生长第二结InGaAs子电池：掺杂浓度为1×1017-1×1018cm-3的n型GaInP背场，厚度为50-400nm；掺杂浓度为1×1016-1×1018cm-3的n型InxGa1-xAs基区，厚度为1000-5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017-1×1019cm-3的p型InxGa1-xAs发射区，厚度为100-500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017-1×1018cm-3的n型GaInP窗口层，厚度为50-400nm。
8、外延生长盖帽层：掺杂浓度为1×1018-1×1019cm-3的n型GaAs重掺层，厚度为100-200nm。
9、制作电池器件结构：通过蒸镀制备电池上下电极。
10、制备电池减反射膜：在电池表面蒸镀氧化铝、氧化钛的双层减反射膜，其中氧化铝厚度20-70nm，氧化钛氧化铝厚度20-70nm。
以上所述的实施例仅用于说明本发明的技术思想及特点，其目的在于使本领域内的技术人员能够理解本发明的内容并据以实施，不能仅以本实施例来限定本发明的专利范围，即凡本发明所揭示的精神所作的同等变化或修饰，仍落在本发明的专利范围内。
Claims (10)
1.一种具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，采用金属有机化学气相沉积法MOCVD，在GaAs/Ge衬底上面依次生长AlAs/GaAs的Bragg反射器、InGaAs量子阱、第一结InGaAs子电池、隧穿结、第二结InGaAs子电池、盖帽层，具体包括以下步骤：
(1)在GaAs/Ge衬底上，外延生长InGaAs缓冲层；
(2)外延生长AlAs/GaAs的Bragg反射器；
(3)外延生长InGaAs量子阱；
(4)外延生长第一结InGaAs子电池：依次生长GaInP背场、InxGa1-xAs基区、InxGa1-xAs发射区、GaInP窗口层；
(5)外延生长隧穿结：依次生长InxGa1-xAs层和p型InxGa1-xAs层；
(6)外延生长第二结InGaAs子电池：依次生长GaInP背场、InxGa1-xAs基区、InxGa1-xAs发射区、GaInP窗口层；
(7)外延生长盖帽层；
(8)制作电池上下电极；
(9)制备电池减反射膜。
2.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(1)中所述GaAs/Ge衬底为采用n型掺杂的GaAs/Ge衬底，其厚度为200-600μm，掺杂浓度为1×1017～1×1018cm-3；并外延生长InGaAs缓冲层，其厚度为500-1000nm；步骤(2)中所述外延生长AlAs/GaAs的Bragg反射器，其中AlAs/GaAs交替生长10-20层，AlAs层厚度50-70nm，GaAs层厚度60-80nm。
3.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(3)中所述外延生长InGaAs量子阱中：掺杂浓度为1.0～1.5×1018cm-3的n型AlGaAs垒层，厚度为1000～1500nm；无掺的AlGaAs限制层，厚度为0.1～0.2μm；高应变InxGa1-xAs量子阱，0.2≤x≤0.5，厚度5～15nm；无掺的AlGaAs限制层，厚度为100～150nm。
4.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(4)中所述外延生长第一结InGaAs子电池中：掺杂浓度为1×1017～1×1018cm-3的n型GaInP背场，厚度为50～400nm；掺杂浓度为1×1016～1×1018cm-3的n型InxGa1-xAs基区，厚度为1000～5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1019cm-3的p型InxGa1-xAs发射区，厚度为100～500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1018cm-3的n型GaInP窗口层，厚度为50～400nm。
5.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(5)中所述外延生长隧穿结：依次生长掺杂浓度为1×1017～1×1018cm-3的n型InxGa1-xAs层和p型InxGa1-xAs层，其中0.3≤x≤0.6，厚度为50～150nm。
6.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(6)中所述外延生长第二结InGaAs子电池：掺杂浓度为1×1017～1×1018cm-3的n型GaInP背场，厚度为50～400nm；掺杂浓度为1×1016～1×1018cm-3的n型InxGa1-xAs基区，厚度为1000～5000nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1019cm-3的p型InxGa1-xAs发射区，厚度为100～500nm，其中0.3≤x≤0.8；掺杂浓度为1×1017～1×1018cm-3的n型GaInP窗口层，厚度为50～400nm。
7.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(7)中所述外延生长盖帽层：掺杂浓度为1×1018～1×1019cm-3的n型GaAs重掺层，厚度为100～200nm。
8.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(8)中通过蒸镀制备电池上下电极。
9.根据权利要求1所述的具有量子阱结构的双结叠层GaAs电池的制备方法，其特征在于，步骤(9)中制备电池减反射膜：在电池表面蒸镀氧化铝、氧化钛的双层减反射膜，其中氧化铝厚度20～70nm，氧化钛氧化铝厚度20～70nm。
10.如权利要求1-9中任一项的制备方法制备的具有量子阱结构的双结叠层GaAs电池。
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