CN105428383A - Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof - Google Patents
Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof Download PDFInfo
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- CN105428383A CN105428383A CN201510967735.6A CN201510967735A CN105428383A CN 105428383 A CN105428383 A CN 105428383A CN 201510967735 A CN201510967735 A CN 201510967735A CN 105428383 A CN105428383 A CN 105428383A
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- image sensor
- cmos image
- photodiode
- electrical charge
- negative electrical
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 title abstract description 11
- 239000002184 metal Substances 0.000 title abstract description 11
- 230000000295 complement effect Effects 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000007667 floating Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims description 27
- 238000001039 wet etching Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000002985 plastic film Substances 0.000 claims description 10
- 229920006255 plastic film Polymers 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 241000588731 Hafnia Species 0.000 claims description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 8
- 238000009825 accumulation Methods 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 10
- 230000008439 repair process Effects 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The invention provides a fabrication method of a complementary metal semiconductor (CMOS) image sensor. The fabrication method of the CMOS image sensor comprises the following steps of providing a substrate structure formed with a photodiode and a floating diffusion region; and forming a thin film containing negative charge, wherein the thin film containing the negative charge covers the photodiode. In the fabrication method of the CMOS image sensor, the thin film containing the negative charge covers the photodiode, a hole in the photodiode can be attracted by the thin film containing the negative charge, thus, a hole accumulation layer is formed on the surface of the photodiode, the surface defect of the photodiode can be completely filled by the hole accumulation layer, and the problem of dark current of the whole photodiode can be further reduced. Meanwhile, in the fabrication method of the CMOS image sensor, provided by the invention, an injection process for an isolation clamping layer also can be omitted, and thus, the fabrication cost is reduced.
Description
Technical field
The present invention relates to ic manufacturing technology field, particularly a kind of cmos image sensor and manufacture method thereof.
Background technology
Imageing sensor is the important component part forming digital camera, and be a kind of equipment optical imagery being converted to signal, it is widely used in digital camera, mobile terminal, portable electron device and other electro-optical devices.Imageing sensor can be divided into the large class of CCD (ChargeCoupledDevice, charge coupled cell) and CMOS (ComplementaryMetalSemiconductor, CMOS (Complementary Metal Oxide Semiconductor) element) imageing sensor two.
Ccd image sensor, except large-scale application is except digital camera, is also widely used in video camera, scanner and industrial circle etc.And cmos image sensor is due to advantages such as its Highgrade integration, low-power consumption and local pixel readings immediately able to programme, be applicable to the fields such as digital camera, PC video camera, mobile communication product.
Ccd image sensor and cmos image sensor are all adopt photodiode (PhotodiodeorPhotodetector) to collect incident light, and are converted into the electric charge that can carry out image procossing.But adopt the imageing sensor of photodiode, still less desirable output current may can be produced when there is no incident light, this less desirable output current is known as " dark current ", dark current is under the condition without ambient light photograph, the electric current that photodiode PN junction is produced by the thermal excitation of charge carrier, defect and harmful impurity of its diffusion generation primarily of the electric charge collected in photodiode or device surface and inside cause.Dark current from photodiode may occur as the noise in processed image, thus lowers image quality, and excessive dark current may cause image deterioration.In addition, when there being metal impurities to enter photodiode, white point (whitepixel) can also be produced.Both has great harmfulness for picture quality.
Please refer to Fig. 1, it is the structural representation of existing cmos image sensor.As shown in Figure 1, in existing cmos image sensor 1, comprising: photodiode 10, described photodiode 10 surface is formed with isolated clamp layer 11; Be formed with floating diffusion region 12 between two adjacent photodiodes 10, surface, described floating diffusion region 12 is formed with source and drain injection region (SDN/SDP) 13.Existing cmos image sensor 1 also exists larger dark current problem and white point (whitepixel) problem, thus causes the picture quality of cmos image sensor not high.
For this reason, those skilled in the art are being devoted to the problem and the white point problem that solve larger dark current always, to improve the picture quality of cmos image sensor.
Summary of the invention
The object of the present invention is to provide a kind of cmos image sensor and manufacture method thereof, to solve larger dark current problem or the white point problem of cmos image sensor in prior art.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of cmos image sensor, the manufacture method of described cmos image sensor comprises:
The substrat structure being formed with photodiode and floating diffusion region is provided;
Formed containing negative electrical charge film, described containing photodiode described in negative electrical charge plastic film covering.
Optionally, in the manufacture method of described cmos image sensor, described is hafnia film or aluminum oxide film containing negative electrical charge film.
Optionally, in the manufacture method of described cmos image sensor, formed described containing negative electrical charge film by technique for atomic layer deposition.
Optionally, in the manufacture method of described cmos image sensor, the described dielectric constant containing negative electrical charge film is greater than 3.6.
Optionally, in the manufacture method of described cmos image sensor, in formation containing negative electrical charge film, described containing before photodiode described in negative electrical charge plastic film covering, also comprise:
Perform source and drain injection technology, in described floating diffusion region, form source and drain injection region;
Wet-etching technology is performed to described substrat structure.
Optionally, in the manufacture method of described cmos image sensor, hydrofluoric acid is adopted to perform wet-etching technology to described substrat structure.
Optionally, in the manufacture method of described cmos image sensor, after wet-etching technology is performed to described substrat structure, also comprise:
Wet clean process is performed to described substrat structure.
Optionally, in the manufacture method of described cmos image sensor, SC1 solution and/or SC2 solution is adopted to perform wet clean process to described substrat structure.
The present invention also provides a kind of cmos image sensor, and described cmos image sensor comprises:
Substrat structure, is formed with photodiode and floating diffusion region in described substrat structure; And
Containing negative electrical charge film, described containing photodiode described in negative electrical charge plastic film covering.
Optionally, in described cmos image sensor, described is hafnia film or aluminum oxide film containing negative electrical charge film.
Inventor studies discovery, the cmos image sensor of the prior art existence problem of larger dark current and the reason of white point problem is caused mainly to be: in prior art, to be formed with isolated clamp layer (PPPD) at photodiode surface, but this isolated clamp layer well can not repair the defect of photodiode surface, thus cause in existing cmos image sensor and there is larger dark current problem; Simultaneously, source and drain injection technology by performing high dose in prior art forms source and drain injection region, in this course, the oxide layer of metal impurities pollution can be formed at photodiode surface, in follow-up thermal process, often just can activate these metal impurities enter in photodiode, thus cause white point.
For this reason, in the manufacture method of cmos image sensor of the present invention, cover on the photodiode containing negative electrical charge film, the hole in photodiode can be attracted containing negative electrical charge film, thus form hole accumulation layer at photodiode surface, the defect of photodiode surface just can be filled up by described hole accumulation layer completely thus, and then just can reduce the dark current problem of whole photodiode.Meanwhile, in the manufacture method of cmos image sensor of the present invention, also can save the injection technology that one deck completely cuts off clamp layer, thus reduce manufacturing cost.
Further, in the manufacture method of cmos image sensor of the present invention, in formation containing negative electrical charge film, described containing before photodiode described in negative electrical charge plastic film covering, also comprise: perform source and drain injection technology, form source and drain injection region in described floating diffusion region after, wet-etching technology is performed to described substrat structure, just the oxide layer that the metal impurities can removing photodiode surface by described wet-etching technology pollutes, thus just can avoid the generation of white point in cmos image sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing cmos image sensor;
Fig. 2 is the structural representation of the cmos image sensor of the embodiment of the present invention.
Embodiment
The cmos image sensor proposed the present invention below in conjunction with the drawings and specific embodiments and manufacture method thereof are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
First, the embodiment of the present application provides a kind of manufacture method of cmos image sensor, and the manufacture method of described cmos image sensor comprises:
The substrat structure being formed with photodiode and floating diffusion region is provided;
Formed containing negative electrical charge film, described containing photodiode described in negative electrical charge plastic film covering.
Because inventor finds after being studied existing cmos image sensor: be formed with isolated clamp layer (PPPD) at photodiode surface in prior art, but this isolated clamp layer well can not repair the defect of photodiode surface, thus cause in existing cmos image sensor and there is larger dark current problem.For this reason, inventors herein propose the manufacture method of the cmos image sensor of the embodiment of the present application, cover on the photodiode containing negative electrical charge film, the hole in photodiode can be attracted containing negative electrical charge film, thus form hole accumulation layer at photodiode surface, the defect of photodiode surface just can be filled up by described hole accumulation layer completely thus, and then just can reduce the dark current problem of whole photodiode.Meanwhile, in the manufacture method of cmos image sensor of the present invention, also can save the injection technology that one deck completely cuts off clamp layer, thus reduce manufacturing cost.
Preferably, described is hafnia film or aluminum oxide film containing negative electrical charge film.Especially, in aluminum oxide film, negative electrical charge content is more, and its diaphragm internal stability is also better, thus more excellent selective oxidation aluminium plastic film covering photodiode.In the embodiment of the present application, technique for atomic layer deposition is adopted to be formed described containing negative electrical charge film.Preferably, the described dielectric constant containing negative electrical charge film is greater than 3.6, and what namely adopt high-k contains negative electrical charge film, can not only form hole accumulation layer thus at photodiode surface, reduces the defect of photodiode surface; Higher energy layer can also be formed at photodiode surface, reduce the defect of photodiode surface further, thus reduce the dark current of photodiode.
Further, in the manufacture method of the cmos image sensor of application embodiment, in formation containing negative electrical charge film, described containing before photodiode described in negative electrical charge plastic film covering, also comprise: perform source and drain injection technology, in described floating diffusion region, form source and drain injection region; Wet-etching technology is performed to described substrat structure.
Inventor finds: the reason that cmos image sensor of the prior art exists white point is, source and drain injection technology by performing high dose in prior art forms source and drain injection region, in this course, the oxide layer of metal impurities pollution can be formed at photodiode surface, in follow-up thermal process, often just can activate these metal impurities enter in photodiode, thus cause white point.For this reason, inventors herein propose and perform source and drain injection technology, form source and drain injection region in described floating diffusion region after, wet-etching technology is performed to described substrat structure, just the oxide layer that the metal impurities can removing photodiode surface by described wet-etching technology pollutes, thus just can avoid the generation of white point in cmos image sensor.
In the embodiment of the present application, hydrofluoric acid is adopted to perform wet-etching technology to described substrat structure.The oxide layer that the metal impurities that hydrofluoric acid effectively can remove photodiode surface pollutes.Further, by regulating concentration and the etch period of described hydrofluoric acid, the oxide layer that the metal impurities that can be good at realizing both completely eliminated photodiode surface pollutes, turn avoid the injury for photodiode.For wet-etching technology, can be good in prior art controlling, the embodiment of the present application repeats no more this.
Preferably, after wet-etching technology is performed to described substrat structure, then wet clean process is performed to described substrat structure.In the embodiment of the present application, standard clean solution is adopted: SC1 solution and/or SC2 solution perform wet clean process to described substrat structure.By performing wet clean process to described substrat structure, can be good at removing some particles and pollution of producing in wet-etching technology, thus improving the quality of the cmos image sensor formed.
After above-mentioned processing step, the cmos image sensor formed can reduce dark current and white point problem greatly.Concrete, please refer to Fig. 2, it is the structural representation of the cmos image sensor of the embodiment of the present invention.As shown in Figure 2, described cmos image sensor 2 comprises: substrat structure 20, is formed with photodiode 21 and floating diffusion region 22 in described substrat structure; And containing negative electrical charge film 23, the described negative electrical charge film 23 that contains covers described photodiode 21.Further, described cmos image sensor 2 also comprises the conventional structure such as floating diffusion region, isolation structure, repeats no more this embodiment of the present application.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (10)
1. a manufacture method for cmos image sensor, is characterized in that, comprising:
The substrat structure being formed with photodiode and floating diffusion region is provided;
Formed containing negative electrical charge film, described containing photodiode described in negative electrical charge plastic film covering.
2. the manufacture method of cmos image sensor as claimed in claim 1, is characterized in that, described is hafnia film or aluminum oxide film containing negative electrical charge film.
3. the manufacture method of cmos image sensor as claimed in claim 1, is characterized in that, is formed described containing negative electrical charge film by technique for atomic layer deposition.
4. the manufacture method of cmos image sensor as claimed in claim 1, is characterized in that, the described dielectric constant containing negative electrical charge film is greater than 3.6.
5. the manufacture method of cmos image sensor as claimed in claim 1, is characterized in that, in formation containing negative electrical charge film, described containing before photodiode described in negative electrical charge plastic film covering, also comprises:
Perform source and drain injection technology, in described floating diffusion region, form source and drain injection region;
Wet-etching technology is performed to described substrat structure.
6. the manufacture method of cmos image sensor as claimed in claim 5, is characterized in that, adopts hydrofluoric acid to perform wet-etching technology to described substrat structure.
7. the manufacture method of cmos image sensor as claimed in claim 5, is characterized in that, after performing wet-etching technology to described substrat structure, also comprises:
Wet clean process is performed to described substrat structure.
8. the manufacture method of cmos image sensor as claimed in claim 7, is characterized in that, adopts SC1 solution and/or SC2 solution to perform wet clean process to described substrat structure.
9. a cmos image sensor, is characterized in that, comprising:
Substrat structure, is formed with photodiode and floating diffusion region in described substrat structure; And
Containing negative electrical charge film, described containing photodiode described in negative electrical charge plastic film covering.
10. cmos image sensor as claimed in claim 9, is characterized in that, described is hafnia film or aluminum oxide film containing negative electrical charge film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510967735.6A CN105428383A (en) | 2015-12-21 | 2015-12-21 | Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510967735.6A CN105428383A (en) | 2015-12-21 | 2015-12-21 | Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof |
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| CN105428383A true CN105428383A (en) | 2016-03-23 |
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| CN201510967735.6A Pending CN105428383A (en) | 2015-12-21 | 2015-12-21 | Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336105A (en) * | 2018-04-04 | 2018-07-27 | 武汉新芯集成电路制造有限公司 | A kind of imaging sensor and its device proximity structure |
| CN110473888A (en) * | 2019-08-26 | 2019-11-19 | 上海华力集成电路制造有限公司 | The forming method and aluminum oxide film of aluminum oxide film in BSI structure image sensor |
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Application publication date: 20160323 |