CN105428273A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing device Download PDFInfo
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- CN105428273A CN105428273A CN201510100817.0A CN201510100817A CN105428273A CN 105428273 A CN105428273 A CN 105428273A CN 201510100817 A CN201510100817 A CN 201510100817A CN 105428273 A CN105428273 A CN 105428273A
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Abstract
Embodiments of the present invention provide a semiconductor manufacturing device, wherein the upper and lower surfaces of the device can be connected with semiconductor chips with bump electrodes and the connection performance and the connection reliability are improved. The semiconductor manufacturing device (1), provided in the embodiments of the present invention, comprises a bonding head (2) composed of an elastomer clamping head (5) and a clamping head retainer (6), a platform (3) and a driving mechanism. The elastomer clamping head (5) abuts against one surface of a semiconductor chip (4) with bump electrodes (42, 44) on both sides thereof to absorb the semiconductor chip (4). The clamping head retainer (6) retains the elastomer clamping head (5). The platform (3) carries a to-be-connected part (7). The to-be-connected part (7) is provided with to-be-connected electrode (72) corresponding to the bump electrode (44). The driving mechanism drives the bonding head (2) to move relative to the platform (3) so as to move the semiconductor chip (4) onto the to-be-connected part (7) and apply a load on the semiconductor chip (4). The contact surface of at least of the elastomer clamping head (5) and the clamping head retainer (6) is provided with a protruding part (62) that is right above the formation region of the bump electrode (44).
Description
[related application]
Subject application enjoys the priority of application case based on No. 2014-188528, Japanese patent application case (applying date: on September 17th, 2014).Subject application comprises all the elements of basic application case by referring to this basic application case.
Technical field
Embodiments of the present invention relate to a kind of semiconductor-fabricating device.
Background technology
In order to realize the miniaturization, high speed, multifunction etc. of semiconductor device, practical have the multiple semiconductor chip of lamination in 1 packaging body and carry out the semiconductor device of SiP (SysteminPackage, the system in package) structure sealed.In the semiconductor device of SiP structure, require the signal of telecommunication received and dispatched at high speed between semiconductor chip.In this case, dimpling block is used in the electrical connection between semiconductor chip.Dimpling block such as has the diameter of about 5 ~ 50 μm, and is formed with the spacing of about 10 ~ 100 μm.When utilizing dimpling block to connect between multiple semiconductor chip, salient pole in the front of the semiconductor chip by being arranged on hypomere side, carry out position alignment with the salient pole at the back side of the semiconductor chip being arranged on epimere side after, while heat, crimp upper and lower semiconductor chip and salient pole is connected each other.
In order to semiconductor chip multistage is connected, exist and also the situation of salient pole is set on the surface of the semiconductor chip of epimere side.When being used in upper and lower surfaces and arranging the semiconductor chip enforcement projection Connection Step of salient pole, absorption chuck (collet) is utilized to keep having the face side of the semiconductor chip of salient pole and make it move on the semiconductor chip of hypomere side, thus while apply heat and loading, salient pole is connected each other.As the chuck for adsorbing, there will be a known rigid body chuck and elastomer chuck.When utilizing the absorption of rigid body chuck to have the chip surface of salient pole, existing and worrying as follows: produce bending stress because of the salient pole of convex at semiconductor chip, thus chap in semiconductor chip generation.When utilizing the absorption of elastomer chuck to have the chip surface of salient pole, the generation of bending stress can be suppressed, but the loading being applied to salient pole disperses because of elastomer chuck.This becomes the main cause reducing connectivity between salient pole and connection reliability.
Summary of the invention
The problem that the present invention will solve is, provides a kind of be full of cracks etc. suppressing that semiconductor chip produces, and improves the projection connectivity of semiconductor chip and the semiconductor-fabricating device of connection reliability in upper and lower surfaces with salient pole.
The semiconductor-fabricating device of execution mode possesses: bonding head, it comprises and has first surface and be elastomer chuck and the chuck retainer of second of opposition side with first surface, and the semiconductor chip being connected to elastomer chuck is adsorbed, described first surface and the one side side in chip body arrange the first salient pole, the surface of one side side that arranges the semiconductor chip of the second salient pole in the another side side of chip body abuts, and described chuck retainer has the first surface to connect with the second face of elastomer chuck and keeps elastomer chuck; Platform, its mounting is connected part, described in be connected part have arrange in the mode corresponding with the second salient pole be connected electrode; And driving mechanism, it makes bonding head and platform relative movement, to aim at the second salient pole to being connected electrode position, and semiconductor chip is moved to be connected on part, and applies loading to moving to the semiconductor chip be connected on part.The position of at least one directly over the forming region comprising the second salient pole in second of elastomer chuck and the first surface of chuck retainer possesses protuberance.
Accompanying drawing explanation
Fig. 1 (a) and (b) represent the semiconductor-fabricating device of the first execution mode and use its cutaway view of interelectrode Connection Step.
Fig. 2 represents the vertical view using the semiconductor-fabricating device shown in Fig. 1 to implement the surface of the circuit face side of the semiconductor chip of Connection Step.
Fig. 3 is that represent the elastomer chuck that uses in the semiconductor-fabricating device shown in Fig. 1 with vertical view that the is bearing surface of semiconductor chip.
Fig. 4 is the vertical view of the side, face connected with elastomer chuck representing the rigid body chuck retainer used in the semiconductor-fabricating device shown in Fig. 1.
Fig. 5 is the cutaway view of the A-A line along the rigid body chuck retainer shown in Fig. 4.
Fig. 6 is the cutaway view representing the chip laminate using the semiconductor-fabricating device shown in Fig. 1 to make.
Fig. 7 (a) and (b) represent the semiconductor-fabricating device of the second execution mode and use its cutaway view of interelectrode Connection Step.
Fig. 8 is the vertical view of the side, face connected with rigid body chuck retainer representing the elastomer chuck used in the semiconductor-fabricating device shown in Fig. 7.
Fig. 9 is the cutaway view of the B-B line along the elastomer chuck shown in Fig. 8.
Embodiment
Below, be described with reference to the semiconductor-fabricating device of accompanying drawing to execution mode.
(the first execution mode)
Fig. 1 represents the semiconductor-fabricating device of the first execution mode and uses its cutaway view of interelectrode Connection Step.Semiconductor-fabricating device 1 shown in Fig. 1 possesses absorption first and is connected the bonding head 2 of part and loads the platform 3 that second is connected part.Bonding head 2 comprises: absorption chuck 5, and it abuts with the semiconductor chip 4 being connected part as first; And chuck retainer 6, it keeps absorption chuck 5.Absorption chuck 5 and chuck retainer 6 have not shown through hole (SS), aspirate via these through holes, and semiconductor chip 4 is adsorbed onto absorption chuck 5 thus.
Bonding head 2 has the aspirating mechanism (not graphic) in order to semiconductor chip 4 absorption to be remained to absorption chuck 5.And then bonding head 2 comprises the heating cooling body (not graphic) heating semiconductor chip 4 according to Connection Step and cool.Bonding head 2 can utilize not shown driving mechanism to move up in XYZ θ side.Platform 3 comprises: adsorbing mechanism (not graphic), and its absorption maintenance second is connected part 7; And heating cooling body (not graphic), it is connected part 7 according to Connection Step to second and heats and cool.Platform 3 can utilize not shown driving mechanism to move up in XY side.Heating cooling body also only can be arranged on the one in bonding head 2 and platform 3.
In FIG, being adsorbed onto first of bonding head 2, to be connected part be the first semiconductor chip 4, and described first semiconductor chip 4 has: the first salient pole 42, and it is arranged on upper surface (circuit face/first surface) the 41a side of chip body 41; Through electrode (ThroughSiliconVia:TSV) 43, it is arranged in the mode of through chip body 41, is electrically connected with the first salient pole 42; And second salient pole 44, it is arranged on lower surface (non-electrical road surface/second surface) the 41b side of chip body 41, is electrically connected with through electrode 43.Being placed on second on platform 3, to be connected part be the second semiconductor chip 7, and described second semiconductor chip 7 has the 3rd salient pole 72 of upper surface (circuit face/first surface) the 71a side being arranged on chip body 71.Second is connected part is not limited to semiconductor chip, also can be the wiring board etc. with connecting electrode.
As shown in Figure 2, in the upper surface 41a side of the first semiconductor chip 4, multiple projection forming region X1 ~ X5 is set.In multiple projection forming region X1 ~ X5, configure the first salient pole 42 respectively.First salient pole 42 is configured in multiple projection forming region X1 ~ X5 of arranging partly relative to the upper surface 41a of the first semiconductor chip 4 respectively.Second salient pole 44 is connected with the first salient pole 42 via through electrode 43.In the lower surface 41b side of the first semiconductor chip 4, in the position corresponding with the projection forming region X1 ~ X5 of upper surface 41a side, projection forming region is also set.In multiple projection forming regions of the lower surface 41b of semiconductor chip 4, configure the second salient pole 44 respectively.In the upper surface 71a side of the second semiconductor chip 7, in the mode corresponding with the second salient pole 44, the 3rd salient pole 72 is set.
The absorption chuck 5 of bonding head 2 has: first surface 51, and it is connected to the upper surface 41a of the first semiconductor chip 4 arranging the first salient pole 42; And second face 52, itself and first surface 51 are opposition side.Absorption chuck 5, under the state making first surface (chip bearing surface) 51 be connected to the upper surface 41a of the first semiconductor chip 4, adsorbs maintenance first semiconductor chip 4.Absorption chuck 5 in order to absorb the concaveconvex shape on the surface because of the first salient pole 42 formation, and is formed by elastomer.Absorption chuck 5 has the elastomer chuck of the rubber-like elastic bodies such as natural rubber, synthetic rubber, thermo-setting elastomer (elastomer) for use.
Elastomer chuck 5 is utilized to adsorb upper surface (projection forming surface) 41a of maintenance first semiconductor chip 4, thus when applying loading, by elastomer chuck 5 absorb because of the first salient pole 42 formed concavo-convex, therefore can suppress with the generation of the first salient pole 42 bending stress that is fulcrum.As shown in Figure 3, the first surface (chip bearing surface) 51 of elastomer chuck 5 has: chip abuts region C, and it abuts with the first semiconductor chip 4; And multiple projection abuts region Y1 ~ Y5, its grade is corresponding with the projection forming region X1 ~ X5 (and projection forming region of lower surface 41b side) of the upper surface 41a side of the first semiconductor chip 4.
Bonding head 2 comprises the chuck retainer 6 keeping elastomer chuck 5.Chuck retainer 6 in order to transmit loading well to elastomer chuck 5, and is formed by rigid body.Chuck retainer 6 is the rigid body chuck retainer of the body material used just like the metal materials such as various steel, stainless steel, aluminium, titanium or ceramic material.Rigid body chuck retainer 6 has the recess 61 embedded for elastomer chuck 5.Be embedded in the elastomer chuck 5 in the recess 61 of chuck retainer 6, the second face 52 being opposition side with first surface (chip bearing surface) 51 connects with rigid body chuck retainer 6.
The first semiconductor chip 4 of the semiconductor-fabricating device shown in Fig. 1 and the Connection Step of the second semiconductor chip 7 is had to be described to use.As shown in Fig. 1 (a), load the second semiconductor chip 7 on platen 3.Second semiconductor chip 7 absorption remains on platform 3.Bonding head 2 is utilized to adsorb maintenance first semiconductor chip 4.While by the second salient pole 44 position alignment to the 3rd salient pole 72, the first semiconductor chip 4 making absorption remain on bonding head 2 moves on the second semiconductor chip 7 of being placed on platform 3.
As shown in Fig. 1 (b), such as utilize driving mechanism that bonding head 2 is declined, thus while make the second salient pole 44 contact with the 3rd salient pole 72, make to move to the first semiconductor chip 4 lamination on the second semiconductor chip 7 on the second semiconductor chip 7.While be heated to the temperature of more than the connection temperature of salient pole 44,72, or ultrasonic waves is applied, while utilize driving mechanism apply loading to the first semiconductor chip 4 and be crimped onto the second semiconductor chip 7 to salient pole 44,72.Utilize this crimping step, the second salient pole 44 is connected with the 3rd salient pole 72 and forms projection connector 8.
As the formation material of salient pole 44,72, the metal material such as welding material or Cu, Ni, Au, Ag, Pd, Sn being included in Sn the Sn alloy that with the addition of Cu, Ag, Bi, In etc. can be enumerated.As the concrete example of welding material (without Pb welding), Sn-Cu alloy, Sn-Ag alloy, Sn-Ag-Cu alloy etc. can be enumerated.Metal material is not limited to monofilm, also can be the laminated film of multiple metal film such as Cu/Ni, Cu/Ni/Cu, Cu/Ni/Au, Ni/Au, Cu/Au.And then metal material also can be the alloy comprising metal as above.As the combination of the second salient pole 44 and the 3rd salient pole 72, illustrate welding/welding, metal/welding, welding/metal, metal/metal etc.And, about the shape of the second salient pole 44 and the 3rd salient pole 72, shape for lugs combination each other or the combinations of shape for lugs and the even shape as weld pad such as hemispherical or column can be used.
In at least one in the second salient pole 44 and the 3rd salient pole 72, preferably use welding material.Consider that bonding head 2 is to the adsorptivity etc. of the first semiconductor chip 4, preferably in the lower surface 41b side of the first semiconductor chip 4, form the salient pole 44 comprising the welding material such as Sn-Cu alloy, Sn-Ag-Cu alloy, in the upper surface 71a side of the second semiconductor chip 7, form the salient pole 14 comprising the metal materials such as Cu/Ni/Cu, Cu/Ni/Au, Ni/Au.In the case, the salient pole 44 comprising welding material is preferably set to shape for lugs, and the salient pole 72 comprising metal material is preferably set to even shape.The connection temperature of so-called salient pole 44,72 is temperature of more than the fusing point of the welding used when utilizing at least one in welding formation salient pole 44,72.
The first salient pole 42 being arranged on the upper surface 41a side of the first semiconductor chip 4 on the first semiconductor chip 4, during other semiconductor chips of lamination, is playing the salient pole of function as connecting electrode further.Here, to when lamination first semiconductor chip 4 and the second semiconductor chip 7, the situation that second salient pole 44 is connected with the 3rd salient pole 72 is carried out describe, but when being multistage by semiconductor chip lamination further, also can by temporary fixed between salient pole 44,72, after all semiconductor chips of lamination, carry out Reflow Soldering or thermo-compressed and formally connect between salient pole.
When the first semiconductor chip 4 is crimped onto the second semiconductor chip 7, via elastomer chuck 5, loading is added to the first semiconductor chip 4.The first surface 51 of elastomer chuck 5 is in the state being trapped in the first salient pole 42.In this state, if elastomer chuck 5 and rigid body chuck retainer 6 are respectively with plane contact, then around load dispersing to the forming region of the first salient pole 42.Its result, cannot apply loading to the second salient pole 44 being arranged on the position (overlapping position) corresponding with the first salient pole 42 fully.This situation causes the bad connection between salient pole 42,72, or becomes the main cause that the connection reliability between salient pole 42,72 is reduced.
In the semiconductor-fabricating device 1 of execution mode, at elastomer chuck 5 contact-making surface with rigid body chuck retainer 6, the forming region of the first salient pole 42 is set, and then in the forming region of the second salient pole 44, loading is concentrated concavo-convex is set.In the first embodiment, as shown in Figures 4 and 5, at the bottom surface 61a of the recess 61 of rigid body chuck retainer 6, arrange with the projection forming region X1 ~ X5 of the first semiconductor chip 4 shown in Fig. 2 and then abut protuberance 62A ~ 62E corresponding to region Y1 ~ Y5 with the projection of the elastomer chuck 5 shown in Fig. 3.Protuberance 62A ~ the 62E of rigid body chuck retainer 6 is positioned at directly over the forming region (and forming region of the second salient pole 44) of the first salient pole 42 of semiconductor chip 4.
There is second face 52 of rigid body chuck retainer 6 relative to elastomer chuck 5 of protuberance 62A ~ 62E, only connect with the upper surface of protuberance 62A ~ 62E.Therefore, loading can be applied to elastomer chuck 5 from rigid body chuck retainer 6 partly via protuberance 62A ~ 62E.The loading being applied to the first semiconductor chip 4 abuts region Y1 ~ Y5 via each region, the i.e. projection of the elastomer chuck 5 corresponding with protuberance 62A ~ 62E, concentrates the forming region being attached to salient pole 42,44.According to these situations, the connectivity of the second salient pole 42 and the 3rd salient pole 72 can be improved, and then the connection reliability between salient pole 42,72 can be improved.Therefore, the chip laminate of the first semiconductor chip 4 and the second semiconductor chip 7 is connected under higher reliability can be produced on.
When the protuberance 62A ~ 62E via rigid body chuck retainer 6 applies loading to elastomer chuck 5, the height of protuberance 62A ~ 62E is preferably set to more than 10 μm and less than 1000 μm.If the height of protuberance 62A ~ 62E is less than 10 μm, then loading cannot be made to focus on the forming region of salient pole 42,44 fully.If the height of protuberance 62A ~ 62E is more than 1000 μm, then the elastomeric distance transmitting loading becomes long, and the loading being applied to the forming region of salient pole 42,44 thus reduces.In either case, all there is the worry that connectivity between salient pole 42,72 and connection reliability reduce.The shape of about 5mm that the flat shape of protuberance 62A ~ 62E is preferably large than the shape consistent with the forming region of salient pole 42,44.If make the flat shape of protuberance 62A ~ 62E exceedingly be greater than the forming region of salient pole 42,44, then loading reduces for the concentration efficiency of salient pole 42,44.
The layering steps employing the semiconductor chip of the semiconductor-fabricating device 1 of execution mode is not limited to the situation of lamination 2 semiconductor chips 4,7.Such as, as shown in Figure 6, can on semiconductor chip 4, lamination the 3rd semiconductor chip 4A, further lamination the 4th semiconductor chip 4B.Semiconductor chip 4A, 4B have the structure identical with semiconductor chip 4.On semiconductor chip 4 when lamination semiconductor chip 4A, 4B, repeat to implement the layering steps shown in Fig. 1.As shown in Figure 6, semiconductor chip 4 and semiconductor chip 4A utilize salient pole 42 to be electrically connected with the connector 8A of salient pole 44A and to be mechanically connected.And then semiconductor chip 4A and semiconductor chip 4B utilize salient pole 42A to be electrically connected with the connector 8B of salient pole 44B and to be mechanically connected.The lamination quantity of semiconductor chip is any amount.
(the second execution mode)
Secondly, with reference to Fig. 7 to Fig. 9, the semiconductor-fabricating device of the second execution mode is described.Fig. 7 represents the semiconductor-fabricating device of the second execution mode and uses its cutaway view of interelectrode Connection Step.Semiconductor-fabricating device 21 shown in Fig. 7 possesses the rigid body chuck retainer 6 with protuberance 62A ~ 62E that the elastomer chuck 5 with protuberance replaces the first execution mode.In addition, there is following situation: identical symbol is indicated to the part identical with the first execution mode of the second execution mode, omits the part in the explanation of these parts.
In the semiconductor-fabricating device 21 of the second execution mode, rigid body chuck retainer 6 has the recess 61 embedded for elastomer chuck 5.The bottom surface 61a of recess 61 is set to plane.On the other hand, as can be seen from figures 8 and 9, in the second face 52 of elastomer chuck 5, arrange with the projection forming region X1 ~ X5 of the first semiconductor chip 4 shown in Fig. 2 and then abut protuberance 53A ~ 53E corresponding to region Y1 ~ Y5 with the projection in the second face 51.Protuberance 53A ~ the 53E of elastomer chuck 5 is positioned at directly over the forming region (and forming region of the second salient pole 44) of the first salient pole 42 of semiconductor chip 4.
There is the bottom surface 61a of elastomer chuck 5 relative to the recess 61 of rigid body chuck retainer 6 of protuberance 53A ~ 53E, only connect with the upper surface of protuberance 53A ~ 53E.Therefore, loading can be applied to elastomer chuck 5 from rigid body chuck retainer 6 locally via protuberance 53A ~ 53E.The loading being applied to the first semiconductor chip 4 abuts region Y1 ~ Y5 via each region, the i.e. projection of the elastomer chuck 5 corresponding with protuberance 53A ~ 53E, concentrates the forming region being attached to salient pole 42,44.According to these situations, the connectivity of the second salient pole 42 and the 3rd salient pole 72 can be improved, and then the connection reliability between salient pole 42,72 can be improved.Therefore, the chip laminate of the first semiconductor chip 4 and the second semiconductor chip 7 is connected under higher reliability can be produced on.
As mentioned above, loading is made to focus on concavo-convex any one face that also can be formed in the face 52 connected with rigid body chuck retainer 6 of elastomer chuck 5 and the face 61a connected with elastomer chuck 5 of rigid body chuck retainer 6 of the forming region of salient pole 42,44.And, according to circumstances, also can arrange concavo-convex two sides of elastomer chuck 5 and rigid body chuck retainer 6.But, if consider ease or the processing cost of processing when forming the protuberance making loading concentrate, and being considered as the replacement frequency etc. of elastomer chuck 5 of running stores, then the preferred face 61a connected with elastomer chuck 5 at rigid body chuck retainer 6 forms protuberance 62A ~ 62E.
In addition, several execution mode of the present invention is illustrated, but these execution modes are exemplarily pointed out, be not intended to limit scope of invention.These execution modes can be implemented with other various forms, can carry out various omission, displacement, change in the scope of purport not departing from invention.These execution modes and change thereof are included in scope of invention or purport, are included in the scope of invention described in claims and equalization thereof simultaneously.
[explanation of symbol]
1 semiconductor-fabricating device
2 bonding heads
3 platforms
4,7 semiconductor chips
41 chip body
42,44,72 salient poles
43 through electrodes
5 elastomer chucks
53 protuberances
6 rigid body chuck retainers
61 recesses
62 protuberances
8 projection connectors
Claims (5)
1. a semiconductor-fabricating device, is characterized in that possessing:
Bonding head, it comprises elastomer chuck, and chuck retainer, and can the semiconductor chip being connected to described elastomer chuck be adsorbed, described elastomer chuck has first surface and second, described first surface with in the one side side of chip body, the first salient pole is set, and the surface arranging the described one side side of the described semiconductor chip of the second salient pole in the another side side of described chip body abuts, described second with described first surface be opposition side, described chuck retainer has the first surface that connects with described second face of described elastomer chuck and keeps described elastomer chuck,
Platform, it can load and be connected part, described in be connected part have arrange in the mode corresponding with described second salient pole be connected electrode; And
Driving mechanism, it can to make to be connected electrode described in the position alignment of described second salient pole, and make simultaneously described semiconductor chip move to described in be connected mode on part, make described bonding head and described platform relative movement, and loading is applied to the described semiconductor chip be connected described in moving on part; And
The position of at least one directly over the forming region comprising described second salient pole of the described first surface of described second and the described chuck retainer of described elastomer chuck possesses protuberance.
2. semiconductor-fabricating device according to claim 1, is characterized in that: described chuck retainer has the recess embedded for described elastomer chuck,
Arrange described protuberance in the bottom surface of described recess, the upper surface of described protuberance connects with described second face of described elastomer chuck.
3. semiconductor-fabricating device according to claim 1, is characterized in that: described second at described elastomer chuck arranges described protuberance, and the upper surface of described protuberance contacts with the described first surface of described chuck retainer.
4. the semiconductor-fabricating device according to Claims 2 or 3, is characterized in that: described protuberance has more than 10 μm and the height of less than 1000 μm.
5. semiconductor-fabricating device according to any one of claim 1 to 3, is characterized in that: described semiconductor chip is the first semiconductor chip that described first salient pole utilizes the through electrode of through described semiconductor chip to be electrically connected with described second salient pole;
The described part that is connected is have as described the second semiconductor chip being connected the 3rd salient pole of electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-188528 | 2014-09-17 | ||
| JP2014188528A JP6212011B2 (en) | 2014-09-17 | 2014-09-17 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428273A true CN105428273A (en) | 2016-03-23 |
| CN105428273B CN105428273B (en) | 2018-07-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510100817.0A Active CN105428273B (en) | 2014-09-17 | 2015-03-06 | Semiconductor manufacturing apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP6212011B2 (en) |
| CN (1) | CN105428273B (en) |
| TW (1) | TWI581363B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10847405B2 (en) * | 2017-08-31 | 2020-11-24 | Nichia Corporation | Method for manufacturing semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7372107B2 (en) * | 2019-10-15 | 2023-10-31 | 株式会社岡本工作機械製作所 | Wafer polishing head |
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| KR101801264B1 (en) * | 2011-06-13 | 2017-11-27 | 삼성전자주식회사 | Apparatus of manufacturing semiconductor and Method for packaging semiconductor using the same |
| JP5936968B2 (en) * | 2011-09-22 | 2016-06-22 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| JP2015053418A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Semiconductor manufacturing apparatus |
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- 2014-09-17 JP JP2014188528A patent/JP6212011B2/en active Active
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- 2015-03-03 TW TW104106722A patent/TWI581363B/en active
- 2015-03-06 CN CN201510100817.0A patent/CN105428273B/en active Active
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| CN1890678A (en) * | 2003-12-05 | 2007-01-03 | 日立化成工业株式会社 | Electronic device manufacturing method |
| CN101356643A (en) * | 2006-09-13 | 2009-01-28 | 住友电木株式会社 | Semiconductor device |
| JP2008300508A (en) * | 2007-05-30 | 2008-12-11 | Mitsubishi Electric Corp | Press-bonding device, and manufacturing method of electronic device |
| US20100288416A1 (en) * | 2007-12-10 | 2010-11-18 | Sony Chemical & Information Device Corporation | Method and apparatus for mounting electric component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10847405B2 (en) * | 2017-08-31 | 2020-11-24 | Nichia Corporation | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6212011B2 (en) | 2017-10-11 |
| TW201613025A (en) | 2016-04-01 |
| CN105428273B (en) | 2018-07-10 |
| JP2016063014A (en) | 2016-04-25 |
| TWI581363B (en) | 2017-05-01 |
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