CN105424796B - Detection method inside flip chip bonding device - Google Patents
Detection method inside flip chip bonding device Download PDFInfo
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- CN105424796B CN105424796B CN201510730607.XA CN201510730607A CN105424796B CN 105424796 B CN105424796 B CN 105424796B CN 201510730607 A CN201510730607 A CN 201510730607A CN 105424796 B CN105424796 B CN 105424796B
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- sensor
- bonding device
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- flip chip
- chip bonding
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/043—Analysing solids in the interior, e.g. by shear waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/0289—Internal structure, e.g. defects, grain size, texture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
Abstract
The present invention relates to detection method inside flip chip bonding device, comprise the following steps：Routinely measurand and sensor are placed into position and perform the preparation before detection；Sensor is adjusted, focuses to surface wave downwards；Continuation focuses to underfill and chip interface ripple downwards；The waveform is placed in a setting, uses reflective-mode to carry out interface scanning；Picture structure identical region is selected to preserve test point waveform and amplitude image as test point；Observe the gray scale at identical structure, if gray scale is variant, and the waveform of each test point is variant, amplitude difference reaches 10%, it can determine that flip chip bonding device existing defects, if gray scale indifference XOR gray scale is variant but waveform is variant, amplitude difference is less than 10%, continues to focus on downwards and underfill and substrate interface are detected.Using the present invention, complete detection can be carried out to all structures inside flip chip bonding device, and it is lossless, accurate, convenient, flexible.
Description
Technical field
The present invention relates to the Non-Destructive Testing of flip chip bonding device, specifically detection method inside flip chip bonding device.
Background technology
With the fast development of electronics and information industry, the encapsulation technology of IC chip is to high density, at high speed, small
Face-down bonding techniques are developed in volume direction has turned into the main flow of encapsulation technology development, and high with packaging density, and high frequency performance is good for spy
The flip chip bonding device of point starts widely to be paid close attention to.Because flip chip bonding device internal structure is complicated, produced unavoidably in production process
Raw defect.Flip chip bonding device is using preceding having to pass through detection, generally use X-ray radiography technology or metallographic sample preparation inspection method
To detect inside flip chip bonding device.X-ray radiography technology can be checked flip chip bonding device soldered ball, internal welding point, but can not
Check flip chip bonding device interior bottom portion filling glue；Although metallographic sample preparation inspection can be checked internal all structures, simultaneously
Irreversible destruction can be caused to flip chip bonding device again.In view of existing detection method can not be comprehensively and nondestructively to flip chip bonding
Device inside is checked, therefore, designs detection method ten inside a kind of lossless, accurate, convenient, flexible flip chip bonding device
Divide necessity.
The content of the invention
It is an object of the invention to provide detection method inside a kind of lossless, accurate, convenient, flexible flip chip bonding device.
To achieve the above object, the present invention adopts the following technical scheme that：
Detection method inside flip chip bonding device, comprises the following steps：
S1. tested flip chip bonding device is placed on pallet, pallet is placed in the groove below scanning tower, and is injected into groove
Coupling liquid is untill flip chip bonding device is covered；
S2. the sensor that frequency is 230MHz is loaded on the microscopical scanning tower of ultrasonic scanning, the sensor
It is connected respectively with the transmitting terminal and receiving terminal for scanning tower by data wire, adjusts the position all around of sensor, make sensor
Face flip chip bonding device chip；
S3. by flip chip bonding device and sensor surface bubble removal；
S4. sensor is adjusted, focuses to surface wave downwards, to be optimal poly- during amplitude of wave form maximum in sensor moving process
Burnt position, while sensor gain is adjusted, amplitude of wave form is reached 70%；
S5. continue to focus to underfill and chip interface ripple downwards；
S6. the waveform is placed in a setting, door is arranged to 0.10~0.30 μ s, and width is 0.03~0.10 μ s；
S7. sensor gain is adjusted, filling glue is reached 65%~75% with chip surface wave-amplitude, resolution ratio selection
3072 × 3072, carry out interface scanning using reflective-mode；
S8. A-Scan (spot scan) pattern is selected, moves horizontally sensor, selects picture structure identical region as inspection
Measuring point, preserve test point waveform and amplitude image；
S9. check oscillogram, observe the gray scale at identical structure, if gray scale is variant, perform step S10a, if gray scale without
Difference, perform step S10b；
S10a. the waveform and amplitude of each test point are observed, if waveform is variant and amplitude difference 10%~20% it
Between, judging that tested flip chip bonding device has tiny flaw, detection terminates, if waveform is variant and amplitude difference is more than 20%,
Judge that tested flip chip bonding device has major defect, detection terminates, if waveform is variant and amplitude difference is less than 10%, performs
Step S10b；
S10b. change sensor described in step S2 into sensor that frequency is 100MHz, perform step S3~S5, find bottom
Glue is filled with after chip interface ripple, performing step S11 in portion；
S11. continue downwards to focus to underfill and substrate interface, in sensor process movement during amplitude of wave form maximum
For best focus position；
S12. the waveform is placed in a setting, it is 0.15~0.40 μ s that door, which sets scope, and width is 0.03~0.20 μ s；
S13. sensor gain is adjusted, filling glue is reached 65%~75% with chip surface wave-amplitude, resolution ratio selection
4096 × 4096, carry out interface scanning using reflective-mode；
S14. step S8 is performed；
S15. oscillogram is checked, observes the gray scale at identical structure, if gray scale indifference, judges that tested flip chip bonding device is closed
Lattice, detection terminate, if gray scale is variant, observe the waveform and amplitude of each test point, if waveform is variant but amplitude difference is small
In 10%, judge that tested flip chip bonding device is substantially qualified, detection terminates, if waveform is variant and amplitude difference 10%~
Between 20%, judge that tested flip chip bonding device has tiny flaw, detection terminates, if waveform is variant and amplitude difference exceedes
20%, judge that tested flip chip bonding device has major defect, detection terminates.
The present invention use ultrasonic scanning detection technique, the gray scale of ultrasonography that is reflected by observation, waveform and
Amplitude, differentiate inside checked object there is zero defect, if defective, it is determined that orientation, the shape and size of defect.Using this hair
It is bright, complete detection can be carried out to all structures inside flip chip bonding device, to determine whether there is layering, stomata, crack or folder
The defects of miscellaneous, and it is lossless, accurate, convenient, flexible.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but the embodiment should not be construed as to this
The limitation of invention.
Embodiment one
Checked object：The flip chip bonding device TMS320C6414ZLZ of TI companies production.
S1. checked object is placed on pallet, pallet is placed in the groove below scanning tower, and coupling liquid is injected into groove
Untill checked object is covered；
S2. the sensor that frequency is 230MHz is loaded on the microscopical scanning tower of ultrasonic scanning, the sensor
It is connected respectively with the transmitting terminal and receiving terminal for scanning tower by data wire, adjusts the position all around of sensor, make sensor
Face flip chip bonding device chip；
S3. by flip chip bonding device and sensor surface bubble removal；
S4. sensor is adjusted, focuses to surface wave downwards, to be optimal poly- during amplitude of wave form maximum in sensor moving process
Burnt position, while sensor gain is adjusted, amplitude of wave form is reached 70%；
S5. continue to focus to underfill and chip interface ripple downwards；
S6. the waveform is placed in a setting, it is 0.175 μ s that door, which sets initial time, and width is 0.055 μ s；
S7. sensor gain is adjusted, filling glue is reached 65%~75% with chip surface wave-amplitude, resolution ratio selection
3072 × 3072, carry out interface scanning using reflective-mode；
S8. A-Scan (spot scan) pattern is selected, moves horizontally sensor, selects picture structure identical region as inspection
Measuring point, preserve test point waveform and amplitude image；
S9. oscillogram is checked, observes the gray scale at identical structure, scans gray scale indifference, performs step S10b；
S10b. change sensor described in step S2 into sensor that frequency is 100MHz, perform step S3~S5, find bottom
Glue is filled with after chip interface ripple, performing step S11 in portion；
S11. continue downwards to focus to underfill and substrate interface, in sensor process movement during amplitude of wave form maximum
For best focus position；
S12. the waveform is placed in a setting, door sets and is initiated with 0.23 μ s, and width is 0.045 μ s；
S13. sensor gain is adjusted, filling glue and chip surface wave-amplitude is reached 70%, resolution ratio selection 4096 ×
4096, carry out interface scanning using reflective-mode；
S14. step S8 is performed；
S15. oscillogram is checked, observes the gray scale at identical structure, scans gray scale indifference, judges tested flip chip bonding device
Qualified, detection terminates.
Embodiment two
Checked object：The flip chip bonding device RG828SDGES of Intel Company's production.
S1. checked object is placed on pallet, pallet is placed in the groove below scanning tower, and coupling liquid is injected into groove
Untill checked object is covered；
S2. the sensor that frequency is 230MHz is loaded on the microscopical scanning tower of ultrasonic scanning, the sensor
It is connected respectively with the transmitting terminal and receiving terminal for scanning tower by data wire, adjusts the position all around of sensor, make sensor
Face flip chip bonding device chip；
S3. by flip chip bonding device and sensor surface bubble removal；
S4. sensor is adjusted, focuses to surface wave downwards, to be optimal poly- during amplitude of wave form maximum in sensor moving process
Burnt position, while sensor gain is adjusted, amplitude of wave form is reached 70%；
S5. continue to focus to underfill and chip interface ripple downwards；
S6. the waveform is placed in a setting, it is 0.15 μ s that door, which sets initial time, and width is 0.057 μ s；
S7. sensor gain is adjusted, filling glue and chip surface wave-amplitude is reached 70%, resolution ratio selection 3072 ×
3072, carry out interface scanning using reflective-mode；
S8. A-Scan (spot scan) pattern is selected, moves horizontally sensor, selects picture structure identical region as inspection
Measuring point, preserve test point waveform and amplitude image；
S9. oscillogram is checked, the gray scale at identical structure is observed, scanning result gray scale indifference, performs step S10b；
S10b. change sensor described in step S2 into sensor that frequency is 100MHz, perform step S3~S5, find bottom
Glue is filled with after chip interface ripple, performing step S11 in portion；
S11. continue downwards to focus to underfill and substrate interface, in sensor process movement during amplitude of wave form maximum
For best focus position；
S12. the waveform is placed in a setting, door sets and is initiated with 0.25 μ s, and width is 0.09 μ s；
S13. sensor gain is adjusted, filling glue and chip surface wave-amplitude is reached 65%, resolution ratio selection 4096 ×
4096, carry out interface scanning using reflective-mode；
S14. step S8 is performed；
S15. oscillogram is checked, observes the gray scale at identical structure, scanning result gray scale is variant, observes each test point
Waveform and amplitude, waveform is variant and amplitude difference reaches 23%, judges that tested flip chip bonding device has major defect, detects
Terminate.
Embodiment three
Checked object：The flip chip bonding device EP2S15F484I4N of ALTERA companies production.
S1. checked object is placed on pallet, pallet is placed in the groove below scanning tower, and coupling liquid is injected into groove
Untill checked object is covered；
S2. the sensor that frequency is 230MHz is loaded on the microscopical scanning tower of ultrasonic scanning, the sensor
It is connected respectively with the transmitting terminal and receiving terminal for scanning tower by data wire, adjusts the position all around of sensor, make sensor
Face flip chip bonding device chip；
S3. by flip chip bonding device and sensor surface bubble removal；
S4. sensor is adjusted, focuses to surface wave downwards, to be optimal poly- during amplitude of wave form maximum in sensor moving process
Burnt position, while sensor gain is adjusted, amplitude of wave form is reached 70%；
S5. continue to focus to underfill and chip interface ripple downwards；
S6. the waveform is placed in a setting, it is 0.175 μ s that door, which sets initial time, and width is 0.065 μ s；
S7. sensor gain is adjusted, filling glue and chip surface wave-amplitude is reached 68%, resolution ratio selection 3072 ×
3072, carry out interface scanning using reflective-mode；
S8. A-Scan (spot scan) pattern is selected, moves horizontally sensor, selects picture structure identical region as inspection
Measuring point, preserve test point waveform and amplitude image；
S9. oscillogram is checked, observes the gray scale at identical structure, scanning result gray scale is variant, performs step S10a；
S10a. the waveform and amplitude of each test point are observed, waveform is variant and amplitude difference reaches 25%, judges tested
There is major defect in flip chip bonding device, detection terminates.
The content not being described in detail in this specification, belong to prior art known to those skilled in the art.
Claims (1)
1. detection method inside flip chip bonding device, comprises the following steps：
S1. tested flip chip bonding device is placed on pallet, pallet is placed in the groove below scanning tower, and coupling is injected into groove
Liquid is untill flip chip bonding device is covered；
S2. the sensor that frequency is 230MHz is loaded on the microscopical scanning tower of ultrasonic scanning, the sensor passes through
Data wire is connected with the transmitting terminal and receiving terminal for scanning tower respectively, is adjusted the position all around of sensor, is made sensor face
Flip chip bonding device chip；
S3. by flip chip bonding device and sensor surface bubble removal；
S4. sensor is adjusted, focuses to surface wave downwards, during amplitude of wave form maximum is optimum focusing position in sensor moving process
Put, while adjust sensor gain, amplitude of wave form is reached 70%；
S5. continue to focus to underfill and chip interface ripple downwards；
S6. the waveform is placed in a setting, door is arranged to 0.10~0.30 μ s, and width is 0.03~0.10 μ s；
S7. sensor gain is adjusted, filling glue and chip surface wave-amplitude is reached 65%~75%, resolution ratio selection 3072 ×
3072, carry out interface scanning using reflective-mode；
S8. A-Scan (spot scan) pattern is selected, moves horizontally sensor, selects picture structure identical region as detection
Point, preserve test point waveform and amplitude image；
S9. oscillogram is checked, observes the gray scale at identical structure, if gray scale is variant, step S10a is performed, if gray scale indifference
It is different, perform step S10b；
S10a. the waveform and amplitude of each test point are observed, if waveform is variant and amplitude difference is between 10%~20%, is sentenced
There is tiny flaw in surely tested flip chip bonding device, detection terminates, if waveform is variant and amplitude difference is more than 20%, judge quilt
Survey flip chip bonding device and major defect be present, detection terminates, if waveform is variant and amplitude difference is less than 10%, performs step
S10b；
S10b. change sensor described in step S2 into sensor that frequency is 100MHz, perform step S3~S5, find bottom and fill out
Glue is filled with after chip interface ripple, performing step S11；
S11. continue downwards to focus to underfill and substrate interface, for most during amplitude of wave form maximum in sensor process movement
Good focal position；
S12. the waveform is placed in a setting, it is 0.15~0.40 μ s that door, which sets scope, and width is 0.03~0.20 μ s；
S13. sensor gain is adjusted, filling glue is reached 65%~75% with chip surface wave-amplitude, resolution ratio selection 4096
× 4096, carry out interface scanning using reflective-mode；
S14. step S8 is performed；
S15. oscillogram is checked, observes the gray scale at identical structure, if gray scale indifference, judges that tested flip chip bonding device is qualified,
Detection terminates, if gray scale is variant, observes the waveform and amplitude of each test point, if waveform is variant but amplitude difference is less than
10%, judge that tested flip chip bonding device is substantially qualified, detection terminates, if waveform is variant and amplitude difference is 10%~20%
Between, judge that tested flip chip bonding device has tiny flaw, detection terminates, if waveform is variant and amplitude difference exceedes
20%, judge that tested flip chip bonding device has major defect, detection terminates.
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| CN201510730607.XA CN105424796B (en) | 2015-10-30 | 2015-10-30 | Detection method inside flip chip bonding device |
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| CN201510730607.XA CN105424796B (en) | 2015-10-30 | 2015-10-30 | Detection method inside flip chip bonding device |
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| CN111007149B (en) * | 2019-09-30 | 2022-05-27 | 湖北航天技术研究院计量测试技术研究所 | Internal detection method for TSOP (time delay locked loop) laminated chip |
| CN110988146A (en) * | 2019-11-01 | 2020-04-10 | 航天科工防御技术研究试验中心 | Packaged chip detection method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977555A (en) * | 1996-12-17 | 1999-11-02 | Texas Instruments Incorporated | Method and apparatus for detecting cracks in a flip-chip die using passive scanning-head microscopy |
| US6421811B1 (en) * | 1999-09-30 | 2002-07-16 | Advanced Micro Devices, Inc. | Defect detection via acoustic analysis |
-
2015
- 2015-10-30 CN CN201510730607.XA patent/CN105424796B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977555A (en) * | 1996-12-17 | 1999-11-02 | Texas Instruments Incorporated | Method and apparatus for detecting cracks in a flip-chip die using passive scanning-head microscopy |
| US6421811B1 (en) * | 1999-09-30 | 2002-07-16 | Advanced Micro Devices, Inc. | Defect detection via acoustic analysis |
Non-Patent Citations (2)
| Title |
|---|
| 超声扫描显微镜检查在倒装器件检测中的应用;潘凌宇 等;《电子与封装》;20141130;第14卷(第11期);第41页摘要，第42-44页第4节，图4、6、9、12、14-17 * |
| 超声扫描检测技术在半导体行业中的应用;潘凌宇 等;《计算机与数字工程》;20150131;第43卷(第1期);第124-127页 * |
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