CN105405945A - Composite substrate and method of manufacturing GaN-based LED by using substrate - Google Patents
Composite substrate and method of manufacturing GaN-based LED by using substrate Download PDFInfo
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- CN105405945A CN105405945A CN201510712388.2A CN201510712388A CN105405945A CN 105405945 A CN105405945 A CN 105405945A CN 201510712388 A CN201510712388 A CN 201510712388A CN 105405945 A CN105405945 A CN 105405945A
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- 239000000758 substrate Substances 0.000 title claims abstract description 151
- 239000002131 composite material Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 238000005554 pickling Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 16
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a composite substrate, which comprises a first substrate and a second substrate. The first substrate and the second substrate are mutually composite; the first substrate comprises an upper surface and a lower surface opposite to the upper surface; the upper surface of the first substrate is used for growing a GaN epitaxial layer; the lower surface of the first substrate is used for being composite with the second substrate; and the second substrate has a thermal expansion coefficient smaller than 3*10<-6>/K. In comparison with the prior art, the composite substrate of the invention comprises the first substrate and the second substrate which are mutually composite, the second substrate has a low thermal expansion coefficient, the thermal expansion coefficient can relieve the deformation quantity of the substrate material in the case of high and low temperature conversion, warping of the GaN-based LED epitaxial wafer can be reduced, the inner stress is reduced, and thus, the composite substrate can reduce influences caused by thermal mismatch between the GaN and the substrate.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly relate to a kind of compound substrate and utilize it to prepare the method for GaN base LED.
Background technology
Light-emitting diode (Light-EmittingDiode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, and can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as indicator light, display panel etc.; Along with the continuous progress of technology, light-emitting diode has been widely used in display, television set daylighting decoration and illumination.
At present, the commercialization extensive LED preparation MOCVD mode that adopts is made more.Utilize mocvd method epitaxial growth GaN backing material used to select substrate should select commaterial, its lattice mismatch is little, thermal coefficient of expansion is low as far as possible.But because GaN base material has high fusing point and very large nitrogen saturated vapor pressure, be difficult to the GaN substrate obtaining large-area high-quality.Owing to lacking the substrate with GaN Lattice Matching, at present on GaN base LED, the general foreign substrate that there is lattice mismatch and coefficient of thermal expansion mismatch that adopts carries out epitaxial growth, and the most frequently used foreign substrate has sapphire and silicon substrate.But, this bi-material all has larger lattice mismatch and coefficient of thermal expansion mismatch with GaN epitaxial layer, cannot the high-quality GaN epitaxial structure of direct growth, the thermal coefficient of expansion difference 35% of Sapphire Substrate and GaN, the thermal coefficient of expansion difference 54% of silicon substrate and GaN.So large thermal mismatching can introduce more defect and larger stress, causes the warpage of LED to become large, and affects the luminous efficiency of LED.
Therefore, for above-mentioned technical problem, be necessary a kind of compound substrate to be provided and to utilize it to prepare the method for GaN base LED.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of compound substrate and utilize it to prepare the method for GaN base LED.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
A kind of compound substrate, for growing GaN epitaxial loayer, it is characterized in that, described compound substrate comprises the first substrate and second substrate of compound each other, wherein, described first substrate comprises upper surface and the lower surface opposing with upper surface, and the upper surface of described first substrate is used for growing GaN epitaxial loayer, the lower surface of described first substrate is used for and described second substrate compound, and the thermal coefficient of expansion of described second substrate is less than 3 × 10
-6/ K.
As a further improvement on the present invention, the thickness of described second substrate is 0.5 ~ 10 μm.
As a further improvement on the present invention, can not there is thermal decomposition in described second substrate at 1100 DEG C, and to NH
3keep inertia.
As a further improvement on the present invention, described first substrate is sapphire or silicon substrate or carborundum or zinc oxide, and described second substrate is silicon dioxide or silicon nitride.
As a further improvement on the present invention, described GaN epitaxial layer comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
Correspondingly, a kind of method utilizing above-mentioned compound substrate to prepare GaN base LED, described preparation method comprises:
S1, provide one first substrate, it comprises upper surface and the lower surface opposing with upper surface;
S2, the lower surface of described first substrate cover second substrate formed compound substrate;
S3, described compound substrate is carried out pickling, and dry;
S4, grow some GaN epitaxial layer at the upper surface of described first substrate, form GaN base LED.
As a further improvement on the present invention, described first substrate is sapphire or silicon substrate or carborundum or zinc oxide.
As a further improvement on the present invention, the thermal coefficient of expansion of described second substrate is less than 3 × 10
-6/ K, described second substrate is silicon dioxide or silicon nitride.
As a further improvement on the present invention, described " described compound substrate is carried out pickling, and dries " step is specially:
Compound substrate is first used NH
4the mixed solution cleaning of F and HF, then use H
2sO
4and H
2o
2mixed solution cleaning, finally utilize washed with de-ionized water, dry in hot nitrogen.
As a further improvement on the present invention, the thickness of described second substrate is 0.5 ~ 10 μm.
The present invention has following beneficial effect:
Compound substrate in the present invention comprises the first substrate and second substrate of compound each other, and wherein, the second substrate is low coefficient of thermal expansion materials.The material of low thermal coefficient of expansion can alleviate the deformation quantity that backing material occurs when high and low temperature shift, thus reduces the warpage of GaN base LED, and reduces its internal stress.Therefore, compound substrate can reduce between GaN and substrate due to impact that thermal mismatching causes.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of compound substrate in the embodiment of the invention;
Fig. 2 is the method step flow chart utilizing compound substrate to prepare GaN base LED in the embodiment of the invention.
Embodiment
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Ginseng Fig. 1 introduces an execution mode of compound substrate 100 structure for the preparation of GaN base LED of the present invention.This structure comprises: the first substrate 10 and the second substrate 20 of compound each other, wherein, first substrate 10 comprises upper surface 11 and the lower surface 12 opposing with upper surface 11, and its upper surface 11 is for growing GaN epitaxial loayer, and the second substrate 20 covers on the lower surface 12 of the first substrate 10.Preferably, the second substrate 20 is low coefficient of thermal expansion materials, and the deformation occurred when being heated is little, and particularly, thermal coefficient of expansion is less than 3 × 10
-6/ K.Because GaN epitaxial layer prepares in MOCVD reaction chamber in NH3 atmosphere, temperature usually 700 ~ 1100 DEG C of changes, therefore, require that the material of the second substrate 20 thermal decomposition can not occur at 1100 DEG C, and to NH3 keep inertia.
Further, the first substrate 10 can be sapphire, silicon substrate, carborundum, zinc oxide etc., and the second substrate 20 can be silicon dioxide, silicon nitride etc., and the thermal coefficient of expansion of silicon dioxide is 0.5 × 10
-6/ K, the thermal coefficient of expansion of silicon nitride is 2.7 × 10
-6/ K, and the stability of the two is all fine.Further, the thickness of the second substrate 20 is 0.5 ~ 10 μm.GaN epitaxial layer comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
Coordinate with reference to Fig. 2, introduce the present invention and utilize compound substrate to prepare an embodiment of GaN base LED method, the method specifically comprises the following steps:
S1, provide one first substrate 10, it comprises upper surface 11 and the lower surface 12 opposing with upper surface 11.
S2, cover the second substrate 20 at the lower surface 11 of described first substrate 10 and form compound substrate.Adopt the method for PECVD that the lower surface 11 of the first substrate 10 is covered the second substrate 20, by the lower surface of the first substrate 10 upward, be placed in the load plate of PECVD device, the temperature of PECVD cavity is risen to 250 DEG C ~ 350 DEG C, Pressure Drop is to about 50Torr, utilize gaseous source, plasma auxiliary under be second substrate 20 of 0.5 ~ 10 μm at lower surface 11 deposit thickness of the first substrate 10.Treat that PECVD cavity is down to room temperature and gets back to normal pressure, take out compound substrate.
S3, described compound substrate is carried out pickling, and dry.Compound substrate is first used NH
4the mixed solution cleaning of F and HF, then use H
2sO
4and H
2o
2mixed solution cleaning, finally utilize washed with de-ionized water, dry in hot nitrogen.
S4, upper surface growing GaN epitaxial loayer at described first substrate.By facing up of the upper surface 11 of the first substrate 10 in compound substrate 100, be placed on the load plate of MOCVD, adopt conventional GaN base LED technique growing GaN epitaxial loayer.GaN epitaxial layer comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
In order to better set forth the present invention, some are below provided to utilize compound substrate to prepare the specific embodiment of GaN base LED method.
Embodiment 1
The compound substrate of sapphire and silicon nitride
By the Sapphire Substrate back side upwards, be placed in the load plate of PECVD, the temperature of PECVD cavity is risen to 350 DEG C, Pressure Drop, to about 50Torr, utilizes N
2o, NH
3and SiH
4for gaseous source, plasma auxiliary under be the silicon nitride material of 2um at the backside deposition thickness of Sapphire Substrate.Treat that PECVD cavity is down to room temperature and gets back to normal pressure, take out compound substrate.
Compound substrate is first used NH
4mixed solution (the NH of F and HF
4the mol ratio of F and HF is at 1:2) middle cleaning 10min, then use H
2sO
4and H
2o
2mixed solution (volume ratio is 3:1) clean 15min, after finally utilizing washed with de-ionized water 3 times, dry in hot nitrogen.
C. by the sapphire of compound substrate towards upper, be placed on the load plate of MOCVD, adopt conventional GaN base LED technique growth LED epitaxial structure.Epitaxial layer structure comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
Embodiment 2
The compound substrate of sapphire and silicon dioxide
By the Sapphire Substrate back side upwards, be placed in the load plate of PECVD, the temperature of PECVD cavity is risen to 250 DEG C, Pressure Drop, to about 50Torr, utilizes N
2o and SiH
4for gaseous source, plasma auxiliary under be the SiO of 2um at the backside deposition thickness of Sapphire Substrate
2material.Treat that PECVD cavity is down to room temperature and gets back to normal pressure, take out compound substrate.
Compound substrate is first used NH
4cleaning 10min in the mixed solution (mol ratio of NH4F and HF is at 2:1) of F and HF, then use H
2sO
4and H
2o
2mixed solution (volume ratio is 3:1) clean 15min, after finally utilizing washed with de-ionized water 3 times, dry in hot nitrogen.
By the sapphire of compound substrate towards upper, be placed on the load plate of MOCVD, adopt conventional GaN base LED technique growth LED epitaxial structure.Epitaxial layer structure comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
Embodiment 3
The compound substrate of silicon and silicon nitride
By the silicon substrate back side upwards, be placed in the load plate of PECVD, the temperature of PECVD cavity is risen to 350 DEG C, Pressure Drop, to about 50Torr, utilizes N2O, NH3 and SiH
4for gaseous source, plasma auxiliary under be the SiN material of 2um at the backside deposition thickness of silicon substrate.Treat that PECVD cavity is down to room temperature and gets back to normal pressure, take out compound substrate.
Compound substrate is first used NH
4mixed solution (the NH of F and HF
4the mol ratio of F and HF is at 1:2) middle cleaning 10min, then use H
2sO
4and H
2o
2mixed solution (volume ratio is 3:1) clean 15min, after finally utilizing washed with de-ionized water 3 times, dry in hot nitrogen.
By the silicon face of compound substrate upwards, be placed on the load plate of MOCVD, adopt conventional GaN base LED technique growth LED epitaxial structure.Epitaxial layer structure comprises AlN resilient coating, AlGaN stress-buffer layer, involuntary GaN layer of mixing, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
Embodiment 4
The compound substrate of silicon and silicon dioxide
By the silicon substrate back side upwards, be placed in the load plate of PECVD, the temperature of PECVD cavity is risen to 250 DEG C, Pressure Drop, to about 50Torr, utilizes N
2o and SiH
4for gaseous source, plasma auxiliary under be the SiO of 2um at the backside deposition thickness of silicon substrate
2material.Treat that PECVD cavity is down to room temperature and gets back to normal pressure, take out compound substrate.
Compound substrate is first used NH
4cleaning 10min in the mixed solution (mol ratio of NH4F and HF is at 1:2) of F and HF, then use H
2sO
4and H
2o
2mixed solution (volume ratio is 3:1) clean 15min, after finally utilizing washed with de-ionized water 3 times, dry in hot nitrogen.
By the silicon face of compound substrate upwards, be placed on the load plate of MOCVD, adopt conventional GaN base LED technique growth LED epitaxial structure.Epitaxial layer structure comprises AlN resilient coating, AlGaN stress-buffer layer, involuntary GaN layer of mixing, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a compound substrate, it is characterized in that, described compound substrate comprises the first substrate and second substrate of compound each other, wherein, described first substrate comprises upper surface and the lower surface opposing with upper surface, the upper surface of described first substrate is used for growing GaN epitaxial loayer, and the lower surface of described first substrate is used for and described second substrate compound, and the thermal coefficient of expansion of described second substrate is less than 3 × 10
-6/ K.
2. compound substrate according to claim 1, is characterized in that, the thickness of described second substrate is 0.5 ~ 10 μm.
3. compound substrate according to claim 1, is characterized in that, described second substrate thermal decomposition can not occur at 1100 DEG C, and to NH
3keep inertia.
4. compound substrate according to claim 1, is characterized in that, described first substrate is sapphire or silicon substrate or carborundum or zinc oxide, and described second substrate is silicon dioxide or silicon nitride.
5. compound substrate according to claim 1, is characterized in that, described GaN epitaxial layer comprises low temperature buffer layer, involuntaryly mixes GaN layer, n-type GaN layer, InGaN/GaN quantum well layer, p-type GaN layer.
6. utilize the compound substrate described in claim 1 to prepare a method of GaN base LED, it is characterized in that, described preparation method comprises:
S1, provide one first substrate, it comprises upper surface and the lower surface opposing with upper surface;
S2, the lower surface of described first substrate cover second substrate formed compound substrate;
S3, described compound substrate is carried out pickling, and dry;
S4, grow some GaN epitaxial layer at the upper surface of described first substrate, form GaN base LED.
7. preparation method according to claim 6, is characterized in that, described first substrate is sapphire or silicon substrate or carborundum or zinc oxide.
8. preparation method according to claim 6, is characterized in that, the thermal coefficient of expansion of described second substrate is less than 3 × 10
-6/ K, described second substrate is silicon dioxide or silicon nitride.
9. preparation method according to claim 6, is characterized in that, described " described compound substrate is carried out pickling, and dries " step is specially:
Compound substrate is first used NH
4the mixed solution cleaning of F and HF, then use H
2sO
4and H
2o
2mixed solution cleaning, finally utilize washed with de-ionized water, dry in hot nitrogen.
10. preparation method according to claim 6, is characterized in that, the thickness of described second substrate is 0.5 ~ 10 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510712388.2A CN105405945A (en) | 2015-10-28 | 2015-10-28 | Composite substrate and method of manufacturing GaN-based LED by using substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510712388.2A CN105405945A (en) | 2015-10-28 | 2015-10-28 | Composite substrate and method of manufacturing GaN-based LED by using substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105405945A true CN105405945A (en) | 2016-03-16 |
Family
ID=55471320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510712388.2A Pending CN105405945A (en) | 2015-10-28 | 2015-10-28 | Composite substrate and method of manufacturing GaN-based LED by using substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105405945A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019128524A1 (en) * | 2017-12-29 | 2019-07-04 | 重庆伟特森电子科技有限公司 | Method for eliminating wafer warpage and composite substrate |
| CN113948390A (en) * | 2021-08-30 | 2022-01-18 | 西安电子科技大学 | Silicon-based AlGaN/GaN HEMT based on substrate back epitaxial layer and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04322476A (en) * | 1991-04-22 | 1992-11-12 | Kyocera Corp | Manufacture of semiconductor light-emitting device |
| JPH0661527A (en) * | 1992-08-07 | 1994-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element and its manufacture |
| US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
| CN104979440A (en) * | 2014-04-10 | 2015-10-14 | 传感器电子技术股份有限公司 | Structured substrate |
| CN205092261U (en) * | 2015-10-28 | 2016-03-16 | 聚灿光电科技股份有限公司 | Composite substrate has its gaN base LED chip |
-
2015
- 2015-10-28 CN CN201510712388.2A patent/CN105405945A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04322476A (en) * | 1991-04-22 | 1992-11-12 | Kyocera Corp | Manufacture of semiconductor light-emitting device |
| JPH0661527A (en) * | 1992-08-07 | 1994-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element and its manufacture |
| US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
| CN104979440A (en) * | 2014-04-10 | 2015-10-14 | 传感器电子技术股份有限公司 | Structured substrate |
| CN205092261U (en) * | 2015-10-28 | 2016-03-16 | 聚灿光电科技股份有限公司 | Composite substrate has its gaN base LED chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019128524A1 (en) * | 2017-12-29 | 2019-07-04 | 重庆伟特森电子科技有限公司 | Method for eliminating wafer warpage and composite substrate |
| CN113948390A (en) * | 2021-08-30 | 2022-01-18 | 西安电子科技大学 | Silicon-based AlGaN/GaN HEMT based on substrate back epitaxial layer and preparation method |
| CN113948390B (en) * | 2021-08-30 | 2024-03-19 | 西安电子科技大学 | Silicon-based AlGaN/GaN HEMT based on substrate back epitaxial layer and preparation method |
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