CN105405902A - Polycrystalline silicon solar cell panel grid with high conversion efficiency - Google Patents
Polycrystalline silicon solar cell panel grid with high conversion efficiency Download PDFInfo
- Publication number
- CN105405902A CN105405902A CN201510928462.4A CN201510928462A CN105405902A CN 105405902 A CN105405902 A CN 105405902A CN 201510928462 A CN201510928462 A CN 201510928462A CN 105405902 A CN105405902 A CN 105405902A
- Authority
- CN
- China
- Prior art keywords
- conversion efficiency
- solar cell
- high conversion
- cell grid
- polysilicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000006004 Quartz sand Substances 0.000 claims abstract description 14
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 13
- 239000004417 polycarbonate Substances 0.000 claims abstract description 12
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 12
- 229920006351 engineering plastic Polymers 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 33
- 230000037396 body weight Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 229920002521 macromolecule Polymers 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011863 silicon-based powder Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 abstract 2
- 229910052500 inorganic mineral Inorganic materials 0.000 abstract 2
- 239000011707 mineral Substances 0.000 abstract 2
- 239000002861 polymer material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a polycrystalline silicon solar cell panel grid with high conversion efficiency. The polycrystalline silicon solar cell panel grid with high conversion efficiency comprises a transparent high polymer material layer, an engineering plastic layer and a metallic mineral layer; the transparent high polymer material layer is made of polymethyl methacrylate; the engineering plastic layer is made of polycarbonate fiber; the metallic mineral layer is made of quartz sand; the polymethyl methacrylate accounts for 52%-67% by weight of the main body of the polycrystalline silicon solar cell panel grid with high conversion efficiency, the polycarbonate fiber accounts for 16%-25% by weight of the main body of the polycrystalline silicon solar cell panel grid with high conversion efficiency; and the quartz sand accounts for 16%-25% by weight of the main body of the polycrystalline silicon solar cell panel grid with high conversion efficiency. The polycrystalline silicon solar cell panel grid with high conversion efficiency provided by the invention has the characteristics of relatively good elasticity as well as toughness, high conversion efficiency and the like.
Description
Technical field
The present invention relates to a kind of polysilicon solar cell grid of high conversion efficiency.
Background technology
Center of gravity is by single crystal direction polycrystalline future development, and main cause is, [1] material end to end can supplying solar cell is less and less, [2] to solar cell, square substrate is more worthwhile, and the polysilicon obtained by casting method and direct freezing method can directly obtain square material, [3] production technology of polysilicon constantly makes progress, and full-automatic casting furnace per production cycle (50 hours) can produce the silicon ingot of more than 200 kilograms, and the size of crystal grain reaches Centimeter Level, [4] research and development due to nearly ten years monocrystalline silicon technique is very fast, wherein technique is also applied to the production of polycrystal silicon cell, such as selective etching emitter junction, back surface field, corrosion matte, surface and body passivation, thin metal gate electrode, adopt screen printing technique that the width of gate electrode can be made to be reduced to 50 microns, highly reach more than 15 microns, the production that rapid thermal annealing techniques is used for polysilicon can shorten the process time greatly, the hot activity time of monolithic can complete within one minute, adopt battery conversion efficiency that this technique is made on the polysilicon chip of 100 square centimeters more than 14%.It is reported, the battery efficiency that 50 ~ 60 microns of multicrystalline silicon substrates make is more than 16%.Efficiency is more than 17% on 100 square centimeters of polycrystalline to utilize mechanical carving groove, screen printing technique, and mechanical cutting efficiency on same area reaches 16%, and adopt and bury grid structure, mechanical carving groove battery efficiency on the polycrystalline of 130 square centimeters reaches 15.8%.
Summary of the invention
The object of the present invention is to provide a kind of polysilicon solar cell grid of high conversion efficiency, have and have good elasticity and the feature such as toughness, high conversion efficiency.
Technical scheme of the present invention is: a kind of polysilicon solar cell grid of high conversion efficiency, the polysilicon solar cell grid of described high conversion efficiency comprises macromolecule transparent material layer, the engineering plastic bed of material and metallic ore nitride layer, described macromolecule transparent material layer is polymethyl methacrylate, the described engineering plastic bed of material is polycarbonate, described metallic ore nitride layer is quartz sand, described polymethyl methacrylate accounts for the 52%-67% of the polysilicon solar cell grid body weight of high conversion efficiency, described polycarbonate accounts for the 16%-25% of the polysilicon solar cell grid body weight of high conversion efficiency, described quartz sand accounts for the 16%-25% of the polysilicon solar cell grid body weight of high conversion efficiency.
In a preferred embodiment of the present invention, described quartz sand comprises silicon powder and silicon dioxide.
In a preferred embodiment of the present invention, described polymethyl methacrylate accounts for 63% of the polysilicon solar cell grid body weight of high conversion efficiency, described polycarbonate accounts for 17% of the polysilicon solar cell grid body weight of high conversion efficiency, and described quartz sand accounts for 16% of the polysilicon solar cell grid body weight of high conversion efficiency.
The polysilicon solar cell grid of a kind of high conversion efficiency of the present invention, has and has good elasticity and the feature such as toughness, high conversion efficiency.
Accompanying drawing explanation
Accompanying drawing 1 be polysilicon solar cell grid one preferred embodiment of high conversion efficiency of the present invention main TV structure schematic diagram.
In accompanying drawing, the mark of each parts is as follows: 1, macromolecule transparent material layer, and 2, the engineering plastic bed of material, 3, metallic ore nitride layer.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Refer to Fig. 1, Fig. 1 is the polysilicon solar cell grid of a kind of high conversion efficiency of the present invention, the polysilicon solar cell grid of described high conversion efficiency comprises macromolecule transparent material layer 1, the engineering plastic bed of material 2 and metallic ore nitride layer 3, described macromolecule transparent material layer 1 is polymethyl methacrylate, the described engineering plastic bed of material 2 is polycarbonates, and described metallic ore nitride layer 3 is quartz sand.
Further illustrate, described quartz sand comprises silicon powder and silicon dioxide, described polymethyl methacrylate accounts for 63% of the polysilicon solar cell grid body weight of high conversion efficiency, described polycarbonate accounts for 17% of the polysilicon solar cell grid body weight of high conversion efficiency, and described quartz sand accounts for 16% of the polysilicon solar cell grid body weight of high conversion efficiency.Chemistry and physical characteristic PMMA have excellent optical characteristics and the variation characteristic of resistance to climate.The penetrability of white light is up to 92%.Polymethyl methacrylate, the polymer obtained with acrylicacidandesters Type of Collective is referred to as acrylics, and have good impact property, light transmittance is fabulous, do not have impurity, electrostatic protection film, the thick rear hardness of Surface hardened layer can reach more than 5-6H.
Further illustrate, the Wuli-Shili-Renli system approach of the uniqueness that quartz sand has, make it in the IT industry of Aeronautics and Astronautics, electronics, machinery and current develop rapidly, occupy very important status, particularly its inherent molecular chain structure, crystal shape and lattice variations rule, make it have high temperature resistant, thermal coefficient of expansion is little, high-insulation, corrosion-resistant, piezoelectric effect, resonance effect and its uniqueness optical characteristics, in many high-tech products, play more and more important effect.
Further illustrating, polycarbonate, water white transparency, heat-resisting, shock resistance, fire-retardant, in common serviceability temperature, there is good mechanical performance.Compare close to polymethyl methacrylate with performance, the impact resistance of polycarbonate is good, and refractive index is high, good processability, does not need additive just to have UL94V-0 level fire resistance.The polysilicon solar cell grid of a kind of high conversion efficiency of the present invention, has and has good elasticity and the feature such as toughness, high conversion efficiency.
The specific embodiment of the present invention; but protection scope of the present invention is not limited thereto; any those of ordinary skill in the art are in the technical scope disclosed by the present invention, and the change can expected without creative work or replacement, all should be encompassed within protection scope of the present invention.Therefore, the protection range that protection scope of the present invention should limit with claims is as the criterion.
Claims (3)
1. the polysilicon solar cell grid of a high conversion efficiency, it is characterized in that: the polysilicon solar cell grid of described high conversion efficiency comprises macromolecule transparent material layer, the engineering plastic bed of material and metallic ore nitride layer, described macromolecule transparent material layer is polymethyl methacrylate, the described engineering plastic bed of material is polycarbonate, described metallic ore nitride layer is quartz sand, described polymethyl methacrylate accounts for the 52%-67% of the polysilicon solar cell grid body weight of high conversion efficiency, described polycarbonate accounts for the 16%-25% of the polysilicon solar cell grid body weight of high conversion efficiency, described quartz sand accounts for the 16%-25% of the polysilicon solar cell grid body weight of high conversion efficiency.
2. the polysilicon solar cell grid of high conversion efficiency according to claim 1, is characterized in that: described quartz sand comprises silicon powder and silicon dioxide.
3. the polysilicon solar cell grid of high conversion efficiency according to claim 1, it is characterized in that: described polymethyl methacrylate accounts for 63% of the polysilicon solar cell grid body weight of high conversion efficiency, described polycarbonate accounts for 17% of the polysilicon solar cell grid body weight of high conversion efficiency, and described quartz sand accounts for 16% of the polysilicon solar cell grid body weight of high conversion efficiency.
Priority Applications (1)
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CN201510928462.4A CN105405902A (en) | 2015-12-15 | 2015-12-15 | Polycrystalline silicon solar cell panel grid with high conversion efficiency |
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CN201510928462.4A CN105405902A (en) | 2015-12-15 | 2015-12-15 | Polycrystalline silicon solar cell panel grid with high conversion efficiency |
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CN105405902A true CN105405902A (en) | 2016-03-16 |
Family
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Family Applications (1)
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CN201510928462.4A Pending CN105405902A (en) | 2015-12-15 | 2015-12-15 | Polycrystalline silicon solar cell panel grid with high conversion efficiency |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106129131A (en) * | 2016-08-23 | 2016-11-16 | 江苏亚太新能源科技有限公司 | A kind of solar battery glass panel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
CN102365755A (en) * | 2009-04-08 | 2012-02-29 | 夏普株式会社 | Interconnect sheet, solar cell with interconnect sheet, solar module, and method of producing solar cell with interconnect sheet |
CN104044320A (en) * | 2014-06-25 | 2014-09-17 | 黄键全 | Organic transparent substrate and manufacturing method thereof |
-
2015
- 2015-12-15 CN CN201510928462.4A patent/CN105405902A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
CN102365755A (en) * | 2009-04-08 | 2012-02-29 | 夏普株式会社 | Interconnect sheet, solar cell with interconnect sheet, solar module, and method of producing solar cell with interconnect sheet |
CN104044320A (en) * | 2014-06-25 | 2014-09-17 | 黄键全 | Organic transparent substrate and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106129131A (en) * | 2016-08-23 | 2016-11-16 | 江苏亚太新能源科技有限公司 | A kind of solar battery glass panel |
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Application publication date: 20160316 |
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