CN105405811A - 一种蓝宝石衬底制作工艺 - Google Patents

一种蓝宝石衬底制作工艺 Download PDF

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CN105405811A
CN105405811A CN201510795423.1A CN201510795423A CN105405811A CN 105405811 A CN105405811 A CN 105405811A CN 201510795423 A CN201510795423 A CN 201510795423A CN 105405811 A CN105405811 A CN 105405811A
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魏臻
孙智江
贾辰宇
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Jiangsu R & D three generation semiconductor industry Research Institute Co., Ltd.
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

本发明涉及一种蓝宝石衬底制作工艺,所述制作工艺包括一次清洗、匀胶、烘烤、冷却、制作图形化衬底、人工目检、刻蚀、二次清洗和自动检测等步骤,清洗过程中用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值在6.5~7.5之间,冲洗液温度在20±1℃,冲洗持续8~12min。本发明的优点在于:通过在进行蓝宝石衬底的图形化处理前对采用的平片衬底进行预清洗,以及图形化刻蚀过程中的二次清洗,严格控制清洗温度和PH值,确保经过清洗后的衬底不会影响后续的上胶处理,降低掉胶率,以便在人工目检过程中尽量发现问题,避免漏检流入下道工序后影响合格率,采用本发明的方法可将良品率提高5%左右,大大降低了资源的浪费和生产成本。

Description

一种蓝宝石衬底制作工艺
技术领域
本发明涉及属于芯片技术领域,特别涉及一种一种蓝宝石衬底制
作工艺。
背景技术
图形化蓝宝石衬底,简称PSS(PatternedSapphireSubstrate),也就是在蓝宝石衬底上生长干法刻蚀用掩膜,用标准的光刻工艺将掩膜刻出图形,利用ICP刻蚀技术刻蚀蓝宝石,并去掉掩膜,再在其上生长GaN材料,使GaN材料的纵向外延变为横向外延。一方面可以有效减少GaN外延材料的位错密度,从而减小有源区的非辐射复合,减小反向漏电流,提高LED的寿命;另一方面有源区发出的光,经GaN和蓝宝石衬底界面多次散射,改变了全反射光的出射角,增加了倒装LED的光从蓝宝石衬底出射的几率,从而提高了光的提取效率。综合这两方面的原因,使PSS上生长的LED的出射光亮度比传统的LED大大提高,同时反向漏电流减小,LED的寿命也得到了延长。随着LED领域工艺技术的发展,以及整个LED行业的迅速壮大,对GaN基LED器件PSS衬底的研究也逐渐增多。
蓝宝石衬底,其质量对后续GaN外延层的生长以及制备蓝光二极管的性能和成品率有很大的影响,高品质LED产品的生产首先要保证衬底基片的质量。可是目前关于硅单晶质量检测方面的研究较多,有的已经成为标准规范,但针对用作第三代半导体材料GaN衬底片的蓝宝石衬底基片质量检测方面的研究和文献资料相对较少,在根据生产经验进行多节点质量控制后,仍然无法获得较高的衬底合格率。
因此,研发一种能够提高衬底合格率并确保后期外延片生长质量的蓝宝石衬底制作工艺势在必行。
发明内容
本发明要解决的技术问题是提供一种能够提高衬底合格率并确保后期外延片生长质量的蓝宝石衬底制作工艺。
为解决上述技术问题,本发明的技术方案为:一种蓝宝石衬底制作工艺,其创新点在于:所述制作工艺的具体步骤如下:
(1)一次清洗:将平片衬底进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值在6.5~7.5之间,冲洗液温度在20±1℃,冲洗持续8~12min;冲洗完成后再通过离心甩干10min;
(2)匀胶:将清洗好的平片衬底送至匀胶工艺治具,并用片盒进行扫描计数,使得匀胶厚度可达2200nm~2400nm;
(3)烘烤、冷却:匀胶结束的平片衬底在100~120℃的条件下烘烤40~70s,再降温至18~22℃进行冷却,冷却25~35s;
(4)制作图形化衬底:冷却后的平片衬底进行曝光,曝光部分的平片衬底用显影液腐蚀,处理得图形化衬底;
(5)人工目检:步骤(4)中图形化衬底有明显掉胶的被分拣出,而目标未发现明显掉胶缺陷的则为OK片,该OK片进入下一工序;
(6)刻蚀:将符合要求的OK片进行刻蚀处理;
(7)二次清洗:刻蚀结束后的OK片进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值在6.5~7.5之间,冲洗液温度在20±1℃,冲洗持续8~12min;冲洗完成后再通过离心甩干10min;
(8)自动检测:通过自动检测仪对清洗后的OK片进行自动检测,有掉胶的被分拣出,没有掉胶缺陷的则入库。
本发明的优点在于:通过在进行蓝宝石衬底的图形化处理前对采用的平片衬底进行预清洗,以及图形化刻蚀过程中的二次清洗,并在过程中严格的控制清洗温度和PH值,去除平片衬底在加工过程中带入的杂质污染物,并确保经过清洗后的衬底不会影响后续的上胶处理,降低掉胶率,以便在人工目检过程中尽量发现问题,避免漏检流入下道工序后影响合格率,采用本发明的方法可将良品率提高5%左右,大大降低了资源的浪费和生产成本。
具体实施方式
下面的实施例可以使本专业的技术人员更全面地理解本发明,但并不因此将本发明限制在所述的实施例范围之中。
实施例1
本实施例的蓝宝石衬底制作工艺,具体步骤如下:
(1)一次清洗:将平片衬底进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为6.5,冲洗液温度在19℃,冲洗持续12min;冲洗完成后再通过离心甩干10min;
(2)匀胶:将清洗好的平片衬底送至匀胶工艺治具,并用片盒进行扫描计数,使得匀胶厚度可达2400nm;
(3)烘烤、冷却:匀胶结束的平片衬底在120℃的条件下烘烤40s,再降温至22℃进行冷却,冷却35s;
(4)制作图形化衬底:冷却后的平片衬底进行曝光,曝光部分的平片衬底用显影液腐蚀,处理得图形化衬底;
(5)人工目检:步骤(4)中图形化衬底有明显掉胶的被分拣出,而目标未发现明显掉胶缺陷的则为OK片,该OK片进入下一工序;
(6)刻蚀:将符合要求的OK片进行刻蚀处理;
(7)二次清洗:刻蚀结束后的OK片进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为6.5,冲洗液温度在19℃,冲洗持续12min;冲洗完成后再通过离心甩干10min;
(8)自动检测:通过自动检测仪对清洗后的OK片进行自动检测,有掉胶的被分拣出,没有掉胶缺陷的则入库。
实施例2
本实施例的蓝宝石衬底制作工艺,具体步骤如下:
(1)一次清洗:将平片衬底进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为7,冲洗液温度在21℃,冲洗持续10min;冲洗完成后再通过离心甩干10min;
(2)匀胶:将清洗好的平片衬底送至匀胶工艺治具,并用片盒进行扫描计数,使得匀胶厚度可达2300nm;
(3)烘烤、冷却:匀胶结束的平片衬底在110℃的条件下烘烤60s,再降温至20℃进行冷却,冷却30s;
(4)制作图形化衬底:冷却后的平片衬底进行曝光,曝光部分的平片衬底用显影液腐蚀,处理得图形化衬底;
(5)人工目检:步骤(4)中图形化衬底有明显掉胶的被分拣出,而目标未发现明显掉胶缺陷的则为OK片,该OK片进入下一工序;
(6)刻蚀:将符合要求的OK片进行刻蚀处理;
(7)二次清洗:刻蚀结束后的OK片进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为7,冲洗液温度在20℃,冲洗持续10min;冲洗完成后再通过离心甩干10min;
(8)自动检测:通过自动检测仪对清洗后的OK片进行自动检测,有掉胶的被分拣出,没有掉胶缺陷的则入库。
实施例3
本实施例的蓝宝石衬底制作工艺,具体步骤如下:
(1)一次清洗:将平片衬底进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为7.5,冲洗液温度在21℃,冲洗持续8min;冲洗完成后再通过离心甩干10min;
(2)匀胶:将清洗好的平片衬底送至匀胶工艺治具,并用片盒进行扫描计数,使得匀胶厚度可达2200nm;
(3)烘烤、冷却:匀胶结束的平片衬底在100℃的条件下烘烤70s,再降温至18℃进行冷却,冷却25s;
(4)制作图形化衬底:冷却后的平片衬底进行曝光,曝光部分的平片衬底用显影液腐蚀,处理得图形化衬底;
(5)人工目检:步骤(4)中图形化衬底有明显掉胶的被分拣出,而目标未发现明显掉胶缺陷的则为OK片,该OK片进入下一工序;
(6)刻蚀:将符合要求的OK片进行刻蚀处理;
(7)二次清洗:刻蚀结束后的OK片进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值为7.5,冲洗液温度在21℃,冲洗持续8min;冲洗完成后再通过离心甩干10min;
(8)自动检测:通过自动检测仪对清洗后的OK片进行自动检测,有掉胶的被分拣出,没有掉胶缺陷的则入库。
以下的表格是实施例1~3蓝宝石衬底制作工艺与传统蓝宝石衬底制作工艺的对比:(实施例1中冲洗液的PH为6.5,温度为19℃;实施例2中冲洗液的PH为7,温度为20℃;实施例3中冲洗液的PH为7.5,温度为21℃;传统的不控制,随机)
表1是一次清洗后的检测对比。
表2是目检后的掉胶率的对比。
表3是最终良率的对比。
表1一次清洗后的检测对比
传统 实施例一 实施例二 实施例三
表面颗粒度(大于0.3μm的颗粒数) ≤10个/片 ≤9个/片 ≤5个/片 ≤5个/片
表面金属离子污染物个数 ≤1010/cm2 ≤1010/cm2 ≤1010/cm2 ≤1010/cm2
微粗糙度Ra ≤0.8nm ≤0.73nm ≤0.35nm ≤0.33nm
表2目检后的掉胶率的对比
传统 实施例一 实施例二 实施例三
掉胶率 30~50% 25~33% 20~27% 30~34%
表3最终良率对比
传统 实施例一 实施例二 实施例三
产品良率 ≥90% ≥95% ≥97% ≥95%
由以上表格可以看出,一次清洗后,本发明表面颗粒度(大于0.3μm的颗粒数)≤5个/片,表面金属离子污染物个数≤1010/cm2,微粗糙度Ra≤0.35nm;目检后的掉胶率只有20~27%,且采用本发明的方法可将良品率提高5%左右,大大降低了资源的浪费和生产成本。
以上显示和描述了本发明的基本原理和主要特征以及本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (1)

1.一种蓝宝石衬底制作工艺,其特征在于:所述制作工艺的具体步骤如下:
(1)一次清洗:将平片衬底进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值在6.5~7.5之间,冲洗液温度在20±1℃,冲洗持续8~12min;冲洗完成后再通过离心甩干10min;
(2)匀胶:将清洗好的平片衬底送至匀胶工艺治具,并用片盒进
行扫描计数,使得匀胶厚度可达2200nm~2400nm;
(3)烘烤、冷却:匀胶结束的平片衬底在100~120℃的条件下烘烤40~70s,再降温至18~22℃进行冷却,冷却25~35s;
(4)制作图形化衬底:冷却后的平片衬底进行曝光,曝光部分的平片衬底用显影液腐蚀,处理得图形化衬底;
(5)人工目检:步骤(4)中图形化衬底有明显掉胶的被分拣出,而目标未发现明显掉胶缺陷的则为OK片,该OK片进入下一工序;
(6)刻蚀:将符合要求的OK片进行刻蚀处理;
(7)二次清洗:刻蚀结束后的OK片进行去胶处理,然后用水作为冲洗液进行冲洗,在冲洗时,控制冲洗液的PH值在6.5~7.5之间,冲洗液温度在20±1℃,冲洗持续8~12min;冲洗完成后再通过离心甩干10min;
(8)自动检测:通过自动检测仪对清洗后的OK片进行自动检测,有掉胶的被分拣出,没有掉胶缺陷的则入库。
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CN106449358A (zh) * 2016-07-07 2017-02-22 如皋市大昌电子有限公司 一种二极管的制备工艺
CN107527796A (zh) * 2017-09-08 2017-12-29 如皋市下原科技创业服务有限公司 一种蓝宝石衬底制作工艺
CN109037402A (zh) * 2018-07-25 2018-12-18 湘能华磊光电股份有限公司 图形化蓝宝石衬底的刻蚀方法
CN109037039A (zh) * 2018-07-25 2018-12-18 湘能华磊光电股份有限公司 图形化蓝宝石衬底的刻蚀方法

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CN106449358A (zh) * 2016-07-07 2017-02-22 如皋市大昌电子有限公司 一种二极管的制备工艺
CN107527796A (zh) * 2017-09-08 2017-12-29 如皋市下原科技创业服务有限公司 一种蓝宝石衬底制作工艺
CN109037402A (zh) * 2018-07-25 2018-12-18 湘能华磊光电股份有限公司 图形化蓝宝石衬底的刻蚀方法
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