CN105390537B - A kind of trench gate IGBT and preparation method thereof - Google Patents
A kind of trench gate IGBT and preparation method thereof Download PDFInfo
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- CN105390537B CN105390537B CN201510765896.7A CN201510765896A CN105390537B CN 105390537 B CN105390537 B CN 105390537B CN 201510765896 A CN201510765896 A CN 201510765896A CN 105390537 B CN105390537 B CN 105390537B
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 230000001413 cellular effect Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
Abstract
The invention discloses a kind of trench gate IGBT and preparation method thereof, cellular includes the first emitter metal electrode, at least one auxiliary flute and the second emitter metal electrode for deviating from base area side positioned at source area and being arranged in a second direction, first emitter metal electrode and the second emitter metal electrode all extend to base area, auxiliary flute and source region contact, and auxiliary flute extends to drift region, auxiliary grid layer is provided in auxiliary flute, the second gate oxide is provided between the inner wall and auxiliary grid layer of auxiliary flute, wherein, first direction intersects with second direction.As shown in the above, technical solution provided by the invention, by forming at least one auxiliary flute between the first convention trench and the second convention trench, to increase the groove density of trench gate IGBT, enhance conductivity modulation effect, and then reduce the on-state voltage drop of trench gate IGBT, improves its performance.
Description
Technical field
The present invention relates to IGBT (Insulted Gate Bipolar Transistor, insulated gate bipolar transistor) skills
Art field is more specifically related to a kind of trench gate IGBT and preparation method thereof.
Background technique
Insulated gate bipolar transistor has that on-state voltage drop is low, current capacity is big, input impedance is high, fast response time and control
The features such as simple is made, the fields such as industry, information, new energy, medicine, traffic are widely used in.
Refering to what is shown in Fig. 1, being a kind of existing structural schematic diagram of trench gate igbt chip, existing trench gate IGBT
It include the source area 2 being oppositely arranged between two conventional trench-gates in the cellular of chip, including there are two conventional trench-gate 1
With emitter metal electrode 3, wherein emitter metal electrode 3 extends to the base area P-.The trench gate igbt chip of existing structure
On-state voltage drop it is high, performance is poor.
Summary of the invention
In view of this, the present invention provides a kind of trench gate IGBT and preparation method thereof, by the first convention trench and
At least one auxiliary flute is formed between second convention trench, to increase the groove density of trench gate IGBT, enhances conductance modulation
Effect, and then the on-state voltage drop of trench gate IGBT is reduced, improve its performance.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of trench gate IGBT, including at least one cellular, the cellular include:
Drift region；
Base area on one surface of drift region；
It is away from the drift region side and normal along the first convention trench of first direction setting and second positioned at the base area
Groove is advised, first convention trench and the second convention trench all extend to the drift region, set in first convention trench
It is equipped with the first conventional grid layer, the second conventional grid layer is provided in second convention trench, and first convention trench is interior
One first is provided between the inner wall of second convention trench and the second conventional grid layer between wall and the first conventional grid layer
Gate oxide；
Source area between first convention trench and the second convention trench and away from the base area side；
Positioned at the source area away from the base area side and in a second direction be arranged the first emitter metal electrode,
At least one auxiliary flute and the second emitter metal electrode, the first emitter metal electrode and the second emitter metal electricity
Pole all extends to the base area, the auxiliary flute and the source region contact, and the auxiliary flute extends to the drift
Area is provided with auxiliary grid layer in the auxiliary flute, is provided between the inner wall of the auxiliary flute and the auxiliary grid layer
Two gate oxides, wherein the first direction intersects with second direction；
And the auxiliary gate oxide of a side surface of the covering auxiliary grid layer away from the drift region.
Preferably, the auxiliary grid layer is also covered with auxiliary gate oxide away from a side surface of the drift region.
Preferably, the auxiliary flute is also connected between first convention trench and the second convention trench completely；
Wherein, it is connected between the auxiliary grid layer and the described first conventional grid layer and the second conventional grid layer, the second gate
Oxide layer is connected with first gate oxide.
Preferably, the trench gate IGBT further include:
Away from the drift region side and it is located at first convention trench away from the auxiliary flute positioned at the base area
At least one first empty groove of side；
The first empty grid layer is provided in described first empty groove；
Third gate oxide is provided between the inner wall of described first empty groove and the first empty grid layer.
Preferably, the trench gate IGBT further include:
Away from the drift region side and it is located at second convention trench away from the auxiliary flute positioned at the base area
At least one second empty groove of side；
The second empty grid layer is provided in described second empty groove；
The 4th gate oxide is provided between the inner wall of described second empty groove and the second empty grid layer.
Preferably, the trench gate IGBT further include:
Well region between the base area and the drift region.
Preferably, first convention trench extends to the depth of the drift region, second convention trench extends to
The depth of the drift region is identical with the depth that the auxiliary flute extends to the drift region.
Preferably, the width of first convention trench, the width of second convention trench and the auxiliary flute
It is of same size.
Preferably, the described first conventional grid layer, the second conventional grid layer and auxiliary grid layer are polycrystalline silicon grid layer.
In addition, the present invention also provides the production methods of trench gate IGBT a kind of, comprising:
A substrate is provided, the substrate includes drift region and the base area on one surface of drift region；
Make that the first convention trench, at least one is auxiliary away from the drift region side and along first direction in the base area
Groove and the second convention trench are helped, and makes the first gate oxide in the inner wall of first convention trench and the second convention trench
With after the inner wall of the auxiliary flute the second gate oxide of production, the first conventional grid are filled in first convention trench
Layer, the conventional grid layer of filling second and the filling auxiliary grid layer in the auxiliary flute in second convention trench, wherein institute
It states the first convention trench, the second convention trench and auxiliary flute and all extends to the drift region；
Source area, institute are made between first convention trench and the second convention trench and away from the base area side
State auxiliary flute and the source region contact；
Deviate from the base area side in the source area and makes the first emitter metal electrode and second in a second direction
Emitter metal electrode includes described at least one between the first emitter metal electrode and the second emitter metal electrode
A auxiliary flute, the first emitter metal electrode and the second emitter metal electrode all extend to the base area；
In the auxiliary grid layer away from the side surface production auxiliary gate oxide of the drift region.
Preferably, it after the side surface production auxiliary gate oxide in the auxiliary grid layer away from the drift region, also wraps
It includes:
A hollow out window is made in the auxiliary grid layer.
Preferably, the auxiliary flute is also connected between first convention trench and the second convention trench completely；
Wherein, it is connected between the auxiliary grid layer and the described first conventional grid layer and the second conventional grid layer, the second gate
Oxide layer is connected with first gate oxide.
Compared to the prior art, technical solution provided by the invention has at least the following advantages:
The present invention provides a kind of trench gate IGBT and preparation method thereof, including at least one cellular, the cellular includes:
Drift region；Base area on one surface of drift region；Positioned at the base area away from the drift region side and along first party
To the first convention trench and the second convention trench of setting, first convention trench and the second convention trench all extend to described
Drift region, the first conventional grid layer is provided in first convention trench, and it is conventional to be provided with second in second convention trench
Grid layer, and between the inner wall of first convention trench and the first conventional grid layer and the inner wall and second of second convention trench
One first gate oxide is provided between conventional grid layer；Between first convention trench and the second convention trench and
Source area away from the base area side；The be arranged away from the base area side and in a second direction positioned at the source area
One emitter metal electrode, at least one auxiliary flute and the second emitter metal electrode, the first emitter metal electrode
The base area, the auxiliary flute and the source region contact, and the auxiliary are all extended to the second emitter metal electrode
Groove extends to the drift region, is provided with auxiliary grid layer in the auxiliary flute, the inner wall of the auxiliary flute and described auxiliary
It helps between grid layer and is provided with the second gate oxide, wherein the first direction intersects with second direction；And covering is described auxiliary
Help grid layer away from the auxiliary gate oxide of a side surface of the drift region.
As shown in the above, technical solution provided by the invention, by the first convention trench and the second convention trench
Between form at least one auxiliary flute, to increase the groove density of trench gate IGBT, enhance conductivity modulation effect, and then reduce
The on-state voltage drop of trench gate IGBT improves its performance.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of existing structural schematic diagram of trench gate igbt chip；
Fig. 2 is a kind of top view of trench gate IGBT provided by the embodiments of the present application；
Fig. 3 a is a kind of sectional drawing along the direction AA ' in Fig. 2；
Fig. 3 b is a kind of sectional drawing along the direction BB ' in Fig. 2；
Fig. 4 a is another kind in Fig. 2 along the sectional drawing in the direction AA '；
Fig. 4 b is another kind in Fig. 2 along the sectional drawing in the direction BB '；
Fig. 5 a is the top view of another trench gate IGBT provided by the embodiments of the present application；
Fig. 5 b is a kind of sectional drawing along the direction AA ' in Fig. 5 a；
Fig. 6 a is the top view of another trench gate IGBT provided by the embodiments of the present application；
Fig. 6 b is a kind of sectional drawing along the direction AA ' in Fig. 6 a；
Fig. 7 is a kind of flow chart of the production method of trench gate IGBT provided by the embodiments of the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, the on-state voltage drop of the trench gate IGBT of existing structure is high, and performance is poor.
Based on this, the embodiment of the present application provides a kind of trench gate IGBT and preparation method thereof, by the first conventional ditch
At least one auxiliary flute is formed between slot and the second convention trench, to increase the groove density of trench gate IGBT, enhances conductance
Mudulation effect, and then the on-state voltage drop of trench gate IGBT is reduced, improve its performance.To achieve the above object, the embodiment of the present application
The technical solution of offer is as follows, wherein in conjunction with Fig. 2 to Fig. 7, carries out detailed retouch to technical solution provided by the embodiments of the present application
It states.
It should be noted that the application the following example is described trench gate IGBT by taking N-type substrate as an example.That is,
Drift region is the drift region N-, base area is the base area P-, source area is N+ source area.
Specifically, Fig. 2 is a kind of trench gate IGBT provided by the embodiments of the present application with reference to shown in Fig. 2, Fig. 3 a and Fig. 3 b
Top view, Fig. 3 a are a kind of sectional drawing along the direction AA ' in Fig. 2, and Fig. 3 b is a kind of sectional drawing along the direction BB ' in Fig. 2；Its
In, trench gate IGBT, including at least one cellular, the cellular include:
Drift region 100；
Base area 200 on 100 1 surface of drift region；
Positioned at the base area 200 away from 100 side of drift region and along the first convention trench of first direction X setting
301 and second convention trench 302, first convention trench 301 and the second convention trench 302 all extend to the drift region
200, it is provided with the first conventional grid layer 301a in first convention trench 301, the is provided in second convention trench 302
Two conventional grid layer 302a, and it is between the inner wall of first convention trench 301 and the first conventional grid layer 301a and described second normal
It advises and is provided with one first gate oxide 303 between the inner wall of groove 302 and the second conventional grid layer 302a；
Between first convention trench 301 and the second convention trench 302 and away from 200 side of the base area
Source area 400；
Deviate from 200 side of base area and in a second direction the first emitter gold of Y setting positioned at the source area 400
Belong to electrode 501, at least one auxiliary flute 304 and the second emitter metal electrode 502, the first emitter metal electrode
501 and second emitter metal electrode 502 all extend to the base area 200, the auxiliary flute 304 and the source area 400
Contact, and the auxiliary flute 304 extends to the drift region 100, is provided with auxiliary grid layer in the auxiliary flute 304
304a is provided with the second gate oxide 305 between the inner wall of the auxiliary flute 304 and the auxiliary grid layer 304a, wherein institute
First direction X is stated to intersect with second direction Y；
And the auxiliary gate oxide of a side surface of the covering auxiliary grid layer 304a away from the drift region 100
306。
It should be noted that trench gate IGBT provided by the embodiments of the present application further includes having collector area, collector electrode metal
The structures such as electrode, this is same as the prior art, therefore does not make extra repeat.
Specifically, be designed as in trench gate IGBT provided by the embodiments of the present application by auxiliary flute and source region contact,
And then groove density is increased, enhance conductivity modulation effect, to achieve the purpose that reduce on-state voltage drop.The embodiment of the present application for
The quantity of secondary trenches grid (i.e. auxiliary flute, auxiliary grid layer and auxiliary gate oxide structure) is not especially limited, and needs basis
Practical application is designed.In addition, the embodiment of the present application is not specifically limited the size of auxiliary flute, need according to actually answering
With specifically being designed, so that trench gate IGBT under the premise of reaching reduces on-state voltage drop, guarantees that short circuit current is allowing
In range.In addition, the carrier between auxiliary flute provided by the embodiments of the present application and source area can pass through neighbouring transmitting
Pole metal electrode extracts, to exhaust rapidly in pressure resistance, to bear high pressure, the voltage endurance of the trench gate IGBT of guarantee.
Further, in order to improve the performance of trench gate IGBT, trench gate IGBT provided by the embodiments of the present application further includes
Multiple void grid structures.It specifically combines shown in Fig. 2, Fig. 3 a and Fig. 3 b, the trench gate IGBT further include:
Away from 100 side of drift region and it is located at first convention trench 301 away from institute positioned at the base area 200
State at least one first empty groove 601 of 304 side of auxiliary flute；
The first empty grid layer 601a is provided in described first empty groove 601；
Third gate oxide is provided between the inner wall of described first empty groove 601 and the first empty grid layer 601a
601b。
And the trench gate IGBT further include:
Away from 100 side of drift region and it is located at second convention trench 302 away from institute positioned at the base area 200
State at least one second empty groove 602 of 304 side of auxiliary flute；
The second empty grid layer 602a is provided in described second empty groove 602；
The 4th gate oxide is provided between the inner wall of described second empty groove 602 and the second empty grid layer 602a
602b。
(the i.e. first empty groove, the first empty grid layer and the it should be noted that the embodiment of the present application trench gate empty for first
The structure of three gate oxides) quantity and the second empty trench gate (the i.e. second empty groove, the second empty grid layer and the 4th gate oxide
Structure) quantity be not specifically limited, need specifically to be designed according to actual needs.
Further, in order to further increase the performance of trench gate IGBT, in conjunction with shown in Fig. 4 a and Fig. 4 b, Fig. 4 a is Fig. 2
The middle another sectional drawing along the direction AA ', Fig. 4 b are another kind in Fig. 2 along the sectional drawing in the direction BB ', wherein the trench gate
IGBT further include:
Well region 700 between the base area 200 and the drift region 100, wherein convention trench, empty groove and auxiliary
It helps groove to both pass through well region, and extends to drift region.
In addition, auxiliary grid layer provided by the embodiments of the present application can also connect ground terminal in addition to it can be arranged with floating.That is,
In conjunction with shown in Fig. 5 a and Fig. 5 b, Fig. 5 a is the top view of another trench gate IGBT provided by the embodiments of the present application, and Fig. 5 b is figure
A kind of sectional drawing along the direction AA ' in 5a, wherein be also formed with a hollow out window 307 in the auxiliary grid layer 306, wherein logical
Crossing hollow out window 307 will assist grid layer to be attached with ground terminal.
Wherein, gate oxide and the first gate oxide, the second gate oxide, third gate oxide and the 4th gate oxidation are assisted
The material of layer is identical, all can be silicon dioxide layer.
In addition, auxiliary grid layer provided by the embodiments of the present application can also be with the first conventional grid layer and the second conventional grid layer phase
Even.It specifically combines shown in Fig. 6 a and Fig. 6 b, is another trench gate IGBT's provided by the embodiments of the present application with reference to shown in Fig. 6 a
Top view, Fig. 6 b be Fig. 6 a in a kind of sectional drawing along the direction AA ', the auxiliary flute 304 also with first convention trench
301 and second are connected to completely between convention trench 302；
Wherein, phase between the conventional grid layer 302a of the auxiliary grid layer 304a and first routine grid layer 301a and second
Even, second gate oxide 305 is connected with first gate oxide 303.
Below with reference to detailed to a kind of production method progress of trench gate IGBT provided by the embodiments of the present application shown in Fig. 7
Explanation.Wherein, Fig. 7 is a kind of flow chart of the production method of trench gate IGBT provided by the embodiments of the present application, trench gate IGBT
Production method include:
S1, a substrate is provided.
A substrate is provided, the substrate includes drift region and the base area on one surface of drift region.
S2, production trench gate.
Make that the first convention trench, at least one is auxiliary away from the drift region side and along first direction in the base area
Groove and the second convention trench are helped, and makes the first gate oxide in the inner wall of first convention trench and the second convention trench
With after the inner wall of the auxiliary flute the second gate oxide of production, the first conventional grid are filled in first convention trench
Layer, the conventional grid layer of filling second and the filling auxiliary grid layer in the auxiliary flute in second convention trench, wherein institute
It states the first convention trench, the second convention trench and auxiliary flute and all extends to the drift region.
S3, production source area.
Source area, institute are made between first convention trench and the second convention trench and away from the base area side
State auxiliary flute and the source region contact；
S4, the first emitter metal electrode of production and the second emitter metal electrode.
Deviate from the base area side in the source area and makes the first emitter metal electrode and second in a second direction
Emitter metal electrode includes described at least one between the first emitter metal electrode and the second emitter metal electrode
A auxiliary flute, the first emitter metal electrode and the second emitter metal electrode all extend to the base area；
S5, production auxiliary gate oxide.
In the auxiliary grid layer away from the side surface production auxiliary gate oxide of the drift region.
In addition, auxiliary grid layer provided by the embodiments of the present application can also connect ground terminal in addition to it can be arranged with floating, that is,
After side surface production auxiliary gate oxide of the auxiliary grid layer away from the drift region, further includes:
Make a hollow out window in the auxiliary grid layer, wherein by hollow out window will assist grid layer and ground terminal into
Row connection.
In addition, auxiliary grid layer provided by the embodiments of the present application can also be with the first conventional grid layer and the second conventional grid layer phase
Even, that is, the auxiliary flute is also connected between first convention trench and the second convention trench completely；
Wherein, it is connected between the auxiliary grid layer and the described first conventional grid layer and the second conventional grid layer, the second gate
Oxide layer is connected with first gate oxide.
In above-mentioned all embodiments, first convention trench extends to the depth of the drift region, described second often
The depth that rule groove extends to the depth of the drift region and the auxiliary flute extends to the drift region is identical.Further
, the distance between adjacent trenches are minimum range achieved by special process equipment.
In addition, the width of the width of first convention trench, the width of second convention trench and the auxiliary flute
It spends identical.In addition, first direction and second direction are mutually perpendicular to.
Wherein, the described first conventional grid layer, the second conventional grid layer and auxiliary grid layer are polycrystalline silicon grid layer.And first
Empty grid layer and the second empty grid layer are similarly polycrystalline silicon grid layer, are not specifically limited to this application, can also be other materials grid
Layer.
The embodiment of the present application provides a kind of trench gate IGBT and preparation method thereof, including at least one cellular, the member
Born of the same parents include: drift region；Base area on one surface of drift region；Positioned at the base area away from the drift region side and
Along the first convention trench and the second convention trench of first direction setting, first convention trench and the second convention trench prolong
The drift region is extended to, the first conventional grid layer is provided in first convention trench, is provided in second convention trench
Second conventional grid layer, and between the inner wall of first convention trench and the first conventional grid layer and second convention trench it is interior
One first gate oxide is provided between wall and the second conventional grid layer；Positioned at first convention trench and the second convention trench
Between and deviate from the base area side source area；It is set away from the base area side and in a second direction positioned at the source area
The first emitter metal electrode, at least one auxiliary flute and the second emitter metal electrode set, the first emitter gold
Belong to electrode and the second emitter metal electrode all extends to the base area, the auxiliary flute and the source region contact, and institute
State auxiliary flute and extend to the drift region, be provided with auxiliary grid layer in the auxiliary flute, the inner wall of the auxiliary flute and
The second gate oxide is provided between the auxiliary grid layer；And the covering auxiliary grid layer deviates from the side of the drift region
The auxiliary gate oxide on surface.
As shown in the above, technical solution provided by the embodiments of the present application, by normal in the first convention trench and second
At least one auxiliary flute is formed between rule groove, to increase the groove density of trench gate IGBT, enhances conductivity modulation effect, into
And the on-state voltage drop of trench gate IGBT is reduced, improve its performance.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (12)
1. a kind of trench gate IGBT, which is characterized in that including at least one cellular, the cellular includes:
Drift region；
Base area on one surface of drift region；
Positioned at the base area away from the drift region side and along the first convention trench of first direction setting and the second conventional ditch
Slot, first convention trench and the second convention trench all extend to the drift region, are provided in first convention trench
First conventional grid layer, is provided with the second conventional grid layer in second convention trench, and the inner wall of first convention trench with
One first grid oxygen is provided between the inner wall of second convention trench and the second conventional grid layer between first conventional grid layer
Change layer；
Source area between first convention trench and the second convention trench and away from the base area side；
The the first emitter metal electrode, at least being arranged away from the base area side and in a second direction positioned at the source area
One auxiliary flute and the second emitter metal electrode, the first emitter metal electrode and the second emitter metal electrode are equal
The base area, the auxiliary flute and the source region contact are extended to, and the auxiliary flute extends to the drift region, institute
It states and is provided with auxiliary grid layer in auxiliary flute, be provided with the second grid oxygen between the inner wall of the auxiliary flute and the auxiliary grid layer
Change layer, wherein the first direction intersects with second direction；
And the auxiliary gate oxide of a side surface of the covering auxiliary grid layer away from the drift region.
2. trench gate IGBT according to claim 1, which is characterized in that be also formed with a hollow out window in the auxiliary grid layer
Mouthful.
3. trench gate IGBT according to claim 1, which is characterized in that the auxiliary flute also with the described first conventional ditch
It is connected to completely between slot and the second convention trench；
Wherein, it is connected between the auxiliary grid layer and the described first conventional grid layer and the second conventional grid layer, second gate oxidation
Layer is connected with first gate oxide.
4. trench gate IGBT according to claim 1, which is characterized in that the trench gate IGBT further include:
Away from the drift region side and it is located at first convention trench away from the auxiliary flute side positioned at the base area
At least one first empty groove；
The first empty grid layer is provided in described first empty groove；
Third gate oxide is provided between the inner wall of described first empty groove and the first empty grid layer.
5. trench gate IGBT according to claim 1, which is characterized in that the trench gate IGBT further include:
Away from the drift region side and it is located at second convention trench away from the auxiliary flute side positioned at the base area
At least one second empty groove；
The second empty grid layer is provided in described second empty groove；
The 4th gate oxide is provided between the inner wall of described second empty groove and the second empty grid layer.
6. trench gate IGBT according to claim 1, which is characterized in that the trench gate IGBT further include:
Well region between the base area and the drift region.
7. trench gate IGBT according to claim 1, which is characterized in that first convention trench extends to the drift
The depth in area, second convention trench extend to the depth of the drift region and the auxiliary flute extends to the drift region
Depth it is identical.
8. trench gate IGBT according to claim 1, which is characterized in that the width of first convention trench, described
The width of two convention trench and the auxiliary flute it is of same size.
9. trench gate IGBT according to claim 1, which is characterized in that the described first conventional grid layer, the second conventional grid layer
It is polycrystalline silicon grid layer with auxiliary grid layer.
10. a kind of production method of trench gate IGBT characterized by comprising
A substrate is provided, the substrate includes drift region and the base area on one surface of drift region；
It is recessed that the first convention trench, at least one auxiliary are made away from the drift region side and along first direction in the base area
Slot and the second convention trench, and the inner wall of first convention trench and the second convention trench make the first gate oxide and
After the inner wall of the auxiliary flute makes the second gate oxide, filled in first convention trench the first conventional grid layer,
The conventional grid layer of filling second and the filling auxiliary grid layer in the auxiliary flute in second convention trench, wherein described the
One convention trench, the second convention trench and auxiliary flute all extend to the drift region；
Source area is made between first convention trench and the second convention trench and away from the base area side, it is described auxiliary
Help groove and the source region contact；
Deviate from the base area side in the source area and makes the first emitter metal electrode and the second transmitting in a second direction
Pole metal electrode includes that described at least one is auxiliary between the first emitter metal electrode and the second emitter metal electrode
Groove is helped, the first emitter metal electrode and the second emitter metal electrode all extend to the base area；
In the auxiliary grid layer away from the side surface production auxiliary gate oxide of the drift region.
11. the production method of trench gate IGBT according to claim 10, which is characterized in that deviate from the auxiliary grid layer
After the side surface production auxiliary gate oxide of the drift region, further includes:
A hollow out window is made in the auxiliary grid layer.
12. the production method of trench gate IGBT according to claim 10, which is characterized in that the auxiliary flute also with institute
It states and is connected to completely between the first convention trench and the second convention trench；
Wherein, it is connected between the auxiliary grid layer and the described first conventional grid layer and the second conventional grid layer, second gate oxidation
Layer is connected with first gate oxide.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040166637A1 (en) * | 2000-05-30 | 2004-08-26 | Hiroyasu Ito | Manufacturing method of semiconductor device |
| CN101000911A (en) * | 2006-01-10 | 2007-07-18 | 株式会社电装 | Semiconductor device having IGBT and diode |
| JP2007324539A (en) * | 2006-06-05 | 2007-12-13 | Fuji Electric Device Technology Co Ltd | Trench type insulating gate semiconductor device |
| US20080224207A1 (en) * | 2007-03-14 | 2008-09-18 | Mitsubishi Electric Corporation | Insulated gate transistor |
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2015
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040166637A1 (en) * | 2000-05-30 | 2004-08-26 | Hiroyasu Ito | Manufacturing method of semiconductor device |
| CN101000911A (en) * | 2006-01-10 | 2007-07-18 | 株式会社电装 | Semiconductor device having IGBT and diode |
| JP2007324539A (en) * | 2006-06-05 | 2007-12-13 | Fuji Electric Device Technology Co Ltd | Trench type insulating gate semiconductor device |
| US20080224207A1 (en) * | 2007-03-14 | 2008-09-18 | Mitsubishi Electric Corporation | Insulated gate transistor |
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