CN105389068A - Capacitive touch screen with GFF structure and manufacturing method therefor - Google Patents
Capacitive touch screen with GFF structure and manufacturing method therefor Download PDFInfo
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- CN105389068A CN105389068A CN201510848141.3A CN201510848141A CN105389068A CN 105389068 A CN105389068 A CN 105389068A CN 201510848141 A CN201510848141 A CN 201510848141A CN 105389068 A CN105389068 A CN 105389068A
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Abstract
The present invention discloses a capacitive touch screen with a GFF structure and a manufacturing method therefor. The capacitive touch screen with the GFF structure comprises a first ITO film layer, a second ITO film layer and a flexible circuit board; an ITO circuit in an X direction is arranged on the first ITO film layer, and the ITO circuit in the X direction comprises an ITO electrode wire in the X direction and an ITO lead-out wire in the X direction which are integrally formed; an ITO circuit in a Y direction is arranged on the second ITO film layer, and the ITO circuit in the Y direction comprises an ITO electrode wire in the Y direction and an ITO lead-out wire in the Y direction which are integrally formed; and the ITO lead-out wire in the X direction and the ITO lead-out wire in the Y direction are connected with the flexible circuit board. According to the capacitive touch screen with the GFF structure, a silver paste wire is not required to be made for connecting the ITO electrode wire with the flexible circuit board, so that the registering problem of the ITO wire and the silver paste wire can be avoided; and the structure is simple, the manufacturing accuracy is higher, the manufacturing cost can be reduced and the product yield is high.
Description
Technical field
The present invention relates to touch screen technology field, particularly relate to capacitance touch screen of a kind of GFF structure and preparation method thereof.
Background technology
In existing capacitance touch screen manufacture craft, after ito thin film (i.e. ITOFilm) upper making ITO circuit, elargol line need be processed into by silver slurry and be connected with FPC to realize ITO circuit, just can connect by realizing circuit.Elargol line connection ITO circuit and FPC is adopted to have the following disadvantages: (1) cost is high, and domestic elargol cost is substantially at 5000RMB/KG, and the unit/KG up to ten thousand easily of import.(2) elargol line processing technology is complicated, yield is low and life efficiency is low.No matter the processing of existing elargol line adopts directly is printed, or again with laser or exposure imaging after printing, its processing technology substantially all needs in 2 ~ 5 each operations, and yields only has about 95% substantially.(3) elargol line is opaque, is difficult to realize the even Rimless design of narrow frame.
Summary of the invention
The technical problem to be solved in the present invention is, for adopting elargol line to connect Problems existing in ITO circuit and FPC process in existing capacitance touch screen manufacturing process, provides capacitance touch screen of a kind of GFF structure and preparation method thereof.
The technical solution adopted for the present invention to solve the technical problems is: a kind of capacitance touch screen of GFF structure, comprises the first ito thin film layer, the second ito thin film layer and flexible circuit board; Described first ito thin film layer is provided with X-direction ITO circuit, and described X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line; Described second ito thin film layer is provided with Y-direction ITO circuit, and described Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line; Described X-direction ITO extension line is connected with described flexible circuit board with described Y-direction ITO extension line.
Preferably, the capacitance touch screen of described GFF structure also comprises cover-plate glass, an OCA optical cement layer, the 2nd OCA optical cement layer and ACF conducting resinl; Described first ito thin film layer and described second ito thin film layer are fitted by a described OCA optical cement layer, and described second ito thin film layer and described cover-plate glass are fitted by described 2nd OCA optical cement layer; Described X-direction ITO extension line is connected by described ACF conducting resinl with described flexible circuit board with described Y-direction ITO extension line.
Preferably, a minor face place of the capacitance touch screen of described GFF structure is provided with the link of described flexible circuit board, and described X-direction ITO extension line is connected with described link respectively with described Y-direction ITO extension line.
Preferably, the live width of described X-direction ITO electrode line is 35-100um, and the live width of described Y-direction ITO electrode line is 100-600um; The live width of described X-direction ITO extension line and Y-direction ITO extension line is 80-300um.
Preferably, the line-spacing of X-direction ITO electrode line and Y-direction ITO electrode line is 35-100um; The line-spacing of X-direction ITO extension line is 80-300um; The line-spacing of Y-direction ITO extension line is 80-300um.
The present invention also provides a kind of method for making of capacitance touch screen of GFF structure, comprises the steps:
S1: make X-direction ITO circuit on described first ito thin film layer; Described second ito thin film layer makes Y-direction ITO circuit; Described X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line, and described Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line;
S2: described X-direction ITO extension line and described Y-direction ITO extension line are tied in flexible circuit board.
Preferably, the step described first ito thin film layer making X-direction ITO circuit comprises:
S111: be covered with the first dry film on the first ito thin film layer;
S112: the first printing opacity light shield is placed on described first ito thin film layer, and use the first printing opacity light shield described in parallel UV light permeability to be radiated on described first dry film to form the first solidification dry film; Described first printing opacity light shield comprises first unthreaded hole corresponding with X-direction ITO electrode line and X-direction ITO extension line;
S113: the Na being 9-11g/l by described first ito thin film layer by concentration with the speed of 3.6-5.0m/min
2cO
3solution, to wash away uncured described first dry film;
S114: the wang aqueous solution being 5.5-8.5mol/L by described first ito thin film layer by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on the described first ito thin film layer (15) of the described first dry film covering be not cured;
S115: the NaOH solution being 0.6-1.8mol/l by described first ito thin film layer by concentration with the speed of 4.0-5.4m/min, to wash away described first solidification dry film, to form described X-direction ITO circuit;
The step that described second ito thin film layer makes Y-direction ITO circuit comprises:
S121: be covered with the second dry film on the second ito thin film layer;
S122: the second printing opacity light shield is placed on described second ito thin film layer; And use the second printing opacity light shield described in parallel UV light permeability to be radiated on described second dry film to form the second solidification dry film; Described second printing opacity light shield comprises second unthreaded hole corresponding with Y-direction ITO electrode line and Y-direction ITO extension line;
S123: the Na being 9-11g/l by described second ito thin film layer by concentration with the speed of 3.6-5.0m/min
2cO
3solution, to wash away the second uncured dry film;
S124: the wang aqueous solution being 5.5-8.5mol/L by the second ito thin film layer by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on described second thin layer of the described second dry film covering be not cured;
S125: the NaOH solution being 0.6-1.8mol/l by the second ito thin film layer by concentration with the speed of 4.0-5.4m/min, to wash away described second solidification dry film, to form described Y-direction ITO circuit;
Preferably, being 35-100um for the width of the part of irradiating described X-direction ITO electrode line in described first unthreaded hole, is 80-300um for irradiating the width of the part of described X-direction ITO extension line; Being 100-600um for the width of the part of irradiating described Y-direction ITO electrode line in described second unthreaded hole, is 80-300um for irradiating the width of the part of described Y-direction ITO extension line.
The present invention compared with prior art tool has the following advantages: the capacitance touch screen of GFF structure provided by the present invention, first ito thin film layer is provided with X-direction ITO circuit, wherein, X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line; And Y-direction ITO circuit is provided with on the second ito thin film layer, wherein, Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line, X-direction ITO extension line is connected with flexible circuit board with Y-direction ITO extension line, without the need to making silver slurry line to be connected with flexible circuit board by ITO electrode line, be conducive to the cost saving elargol line, and there is not the free problem of silver slurry.The capacitive touch screen structure of this GFF structure is simple and making precision is higher, X-direction ITO electrode line and the synchronous processing of X-direction ITO extension line complete, Y-direction ITO electrode line and Y-direction ITO extension line synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, X-direction ITO electrode line, X-direction ITO extension line synchronous Y-direction ITO electrode line and Y-direction ITO extension line are ITO material and are made, ITO material is transparent, be conducive to realizing narrow frame even Rimless be designed with to be beneficial to and realize narrow frame design.
The method for making of the capacitance touch screen of GFF structure provided by the present invention, first ito film layer makes X-direction ITO circuit, and make Y-direction ITO circuit at the second ito film layer, the X-direction ITO circuit produced comprises integrated X-direction ITO electrode line and X-direction ITO extension line, Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line, and X-direction ITO extension line is connected with flexible circuit board with Y-direction ITO extension line, simplify manufacture craft, raising efficiency also effectively can reduce the cost that cost of manufacture is conducive to saving elargol line, and there is not the free problem of silver slurry.The method for making of the capacitive touch screen structure of this GFF structure, makes X-direction ITO electrode line and the synchronous processing of X-direction ITO extension line complete, and Y-direction ITO electrode line and Y-direction ITO extension line synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, X-direction ITO electrode line, X-direction ITO extension line synchronous Y-direction ITO electrode line and Y-direction ITO extension line are ITO material and are made, ITO material is transparent, be conducive to realizing narrow frame even Rimless be designed with to be beneficial to and realize narrow frame design.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of the capacitance touch screen of GFF structure in one embodiment of the invention.
Fig. 2 is the schematic diagram of the X-direction ITO circuit of the capacitance touch screen of GFF structure in one embodiment of the invention.
Fig. 3 is the enlarged drawing of part A in Fig. 2.
Fig. 4 is the schematic diagram of the Y-direction ITO circuit of the capacitance touch screen of GFF structure in one embodiment of the invention.
Fig. 5 is the enlarged drawing of part B in Fig. 4.
Fig. 6 is the process flow diagram of the method for making of the capacitance touch screen of GFF structure in one embodiment of the invention.
In figure: 11, X-direction ITO circuit; 111, X-direction ITO electrode line; 112, X-direction ITO extension line; 12, Y-direction ITO circuit; 121, Y-direction ITO electrode line; 122, Y-direction ITO extension line; 13, flexible circuit board; 14, cover-plate glass; 15, the first ito thin film layer; 16, the second ito thin film layer; 17, an OCA optical cement layer; 18, the 2nd OCA optical cement layer; 19, ACF conducting resinl.
Embodiment
In order to there be understanding clearly to technical characteristic of the present invention, object and effect, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
Fig. 1 illustrates the capacitance touch screen of the GFF structure in the present embodiment.The capacitance touch screen of this GFF structure comprises the first ito thin film layer 15, second ito thin film layer 16 and flexible circuit board 13.First ito thin film layer 15 is provided with X-direction ITO circuit 11; As shown in Figures 2 and 3, X-direction ITO circuit 11 comprises integrated X-direction ITO electrode line 111 and X-direction ITO extension line 112.Second ito thin film layer 16 is provided with Y-direction ITO circuit 12; As shown in Figures 4 and 5, Y-direction ITO circuit 12 comprises integrated Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.X-direction ITO extension line 112 is connected with flexible circuit board 13 with Y-direction ITO extension line 122.
As shown in Figure 1, the capacitance touch screen of this GFF structure also comprises cover-plate glass 14, an OCA optical cement layer 17, the 2nd OCA optical cement layer 18 and ACF conducting resinl 19.First ito thin film layer 15 and the second ito thin film layer 16 are fitted by an OCA optical cement layer 17, and the second ito thin film layer 16 is fitted on cover-plate glass 14 by the 2nd OCA optical cement layer 18.X-direction ITO extension line 112 is connected by ACF conducting resinl 19 with flexible circuit board 13 with Y-direction ITO extension line 122.
In the capacitance touch screen of this GFF structure, because X-direction ITO extension line 112 is directly connected with flexible circuit board 13 with Y-direction ITO extension line 122, without the need to making silver slurry line to be connected with flexible circuit board 13 by ITO electrode line (comprising X-direction ITO electrode line 111 and Y-direction ITO electrode line 121), be conducive to the cost saving elargol line, and there is not the free problem of silver slurry.The capacitive touch screen structure of this GFF structure is simple and making precision is higher, X-direction ITO electrode line 111 and X-direction ITO extension line 112 synchronous processing complete, Y-direction ITO electrode line 121 and Y-direction ITO extension line 122 synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, the synchronous Y-direction ITO electrode line 121 of X-direction ITO electrode line 111, X-direction ITO extension line 112 is ITO material with Y-direction ITO extension line 122 and is made, ITO material is transparent, be conducive to realizing narrow frame even Rimless be designed with to be beneficial to and realize narrow frame design.
One minor face place of the capacitance touch screen of GFF structure is provided with the link of flexible circuit board 13, and X-direction ITO extension line 112 is connected with link respectively with Y-direction ITO extension line 122.X-direction ITO extension line 112 is connected with the minor face place of flexible circuit board 13 at the capacitance touch screen of GFF structure with Y-direction ITO extension line 122, X-direction ITO extension line 112 and Y-direction ITO extension line 122 is adopted to substitute silver slurry line, because ITO is transparent, make its frame cabling the same with form, thus can realize ultra-narrow frame or Rimless.Understandably, in the capacitance touch screen manufacturing process of GFF structure, the ITO material that sheet resistance is lower is preferably adopted to make X-direction ITO electrode line 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122; The drive IC be connected with Y-direction ITO extension line 122 with X-direction ITO extension line 112 preferably adopts driving force better, (as adopted the ITO of the sheet resistance of day east 100 Ω, drive IC is this ZT7548 of Renyi), to ensure induction precision and the sensitivity of the capacitance touch screen of GFF structure.
The live width of X-direction ITO electrode line 111 is 35-100um, and line-spacing is 35-100um; The live width of Y-direction ITO electrode line 121 is 100-600um, and line-spacing is 35-100um; The live width of X-direction ITO extension line 112 is 80-300um, and line-spacing is 80-300um; The live width of Y-direction ITO extension line 122 is 80-300um, and line-spacing is 80-300um.Because ITO line is longer, its impedance is larger, therefore when making X-direction ITO electrode line 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122, need ensure that its live width is not less than minimum value, because impedance is excessive during to avoid making, affect the sensitivity of the capacitance touch screen of GFF structure; And need ensure that its live width is not more than maximal value, if live width is excessive, the demand of ITO impedance can be met, but easily cause that production cost is too high, waste of material and affect induction precision and the sensitivity of the capacitance touch screen of GFF structure.If the line-spacing of any two X-direction ITO electrode lines 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122 is too small, can manufacture difficulty be increased, affect production efficiency; If line-spacing is excessive, can reduces by the density of the capacitive sensing the formed point of X-direction ITO electrode line 111 and Y-direction ITO electrode line 121, affect induction precision.
The method for making of the capacitance touch screen of GFF structure in the open the present embodiment of Fig. 2, this method for making comprises the steps:
S1: make X-direction ITO circuit 11 on described first ito thin film layer 15; Second ito thin film layer 16 makes Y-direction ITO circuit 12.Wherein, X-direction ITO circuit 11 comprises integrated X-direction ITO electrode line 111 and X-direction ITO extension line 112, Y-direction ITO circuit 12 comprises integrated Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.
Particularly, the step the first ito thin film layer 15 making X-direction ITO circuit 11 comprises:
S111: be covered with the first dry film on the first ito thin film layer 15.First dry film is a kind of photoresist, can solidify to form solidification dry film under the irradiation of ultraviolet light, and solidification dry film is alkaline soluble, is insoluble to acid.
S112: the first printing opacity light shield is placed on the first ito thin film layer 15, and use parallel UV light permeability first printing opacity light shield to be radiated on the first dry film to form the first solidification dry film; First printing opacity light shield comprises first unthreaded hole corresponding with X-direction ITO electrode line 111 and X-direction ITO extension line 112.
Particularly, be 35-100um for irradiating the width of the part of X-direction ITO electrode line 111 in the first unthreaded hole, spacing is 35-100um; Be 80-300um for irradiating the width of the part of X-direction ITO extension line 112, spacing is 80-300um.To cover the live width of X-direction ITO electrode line 111 for 35-100um under the make parallel UV light permeability first unthreaded hole be radiated at the first dry film is formed first solidification dry film, line-spacing is 35-100um; The live width of X-direction ITO extension line 112 is 80-300um, and line-spacing is 80-300um.
S113: the Na2CO3 solution being 9-11g/l by the first ito thin film layer 15 by concentration with the speed of 3.6-5.0m/min, to wash away the first uncured dry film.Understandably, Na
2cO
3solution can react with the first dry film be not cured, and does not solidify dry film with first and react, to remove the first dry film be not cured.
S114: the wang aqueous solution being 5.5-8.5mol/L by the first ito thin film layer 15 by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on the first ito thin film layer 15 of the first dry film covering be not cured.Because wang aqueous solution is hydrochloric acid and the nitric acid solution by 1:3 proportioning, can react with ITO, and the first solidification dry film is insoluble to acid, therefore, first ito thin film layer 15 is immersed with the speed of 3.8-5.2m/min the wang aqueous solution that concentration is 5.5-8.5mol/L, can remove not by the ITO of the first solidification dry film covering.
S115: the NaOH solution being 0.6-1.8mol/l by the first ito thin film layer 15 by concentration with the speed of 4.0-5.4m/min, to wash away the first solidification dry film, described to ITO circuit to be formed.Because the first solidification dry film is alkaline soluble, and ITO is insoluble to alkali, first ito thin film layer 15 is immersed with the speed of 4.0-5.4m/min the NaOH solution that concentration is 0.6-1.8mol/l, and effectively can remove the first solidification dry film, the X-direction ITO circuit 11 covered under making the first solidification dry film appears.
The step that second ito thin film layer 16 makes Y-direction ITO circuit 12 comprises:
S121: be covered with the second dry film on the second ito thin film layer 16.Second dry film is a kind of photoresist, can solidify to form solidification dry film under the irradiation of ultraviolet light, and solidification dry film is alkaline soluble, is insoluble to acid.
S122: the second printing opacity light shield is placed on the second ito thin film layer 16; And use parallel UV light permeability second printing opacity light shield to be radiated on the second dry film to form the second solidification dry film; Second printing opacity light shield comprises second unthreaded hole corresponding with Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.
Particularly, be 100-600um for irradiating the width of the part of Y-direction ITO electrode line 121 in the second unthreaded hole, spacing is 35-100um; Be 80-300um for irradiating the width of the part of Y-direction ITO extension line 122, spacing is 80-300um.To cover the live width of Y-direction ITO electrode line 121 for 100-600um under the make parallel UV light permeability second unthreaded hole be radiated at the second dry film is formed second solidification dry film, line-spacing is 35-100um; The live width of Y-direction ITO extension line 122 is 80-300um, and line-spacing is 80-300um.
S123: the Na2CO3 solution being 9-11g/l by the second ito thin film layer 16 by concentration with the speed of 3.6-5.0m/min, to wash away the second uncured dry film.Understandably, Na
2cO
3solution can react with the second dry film be not cured, and does not solidify dry film with second and react, to remove the second dry film be not cured.
S124: the wang aqueous solution being 5.5-8.5mol/L by the second ito thin film layer 16 by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on described second thin layer of the second dry film covering be not cured.Because wang aqueous solution is hydrochloric acid and the nitric acid solution by 1:3 proportioning, can react with ITO, and the second solidification dry film is insoluble to acid, therefore, second ito thin film layer 16 is immersed with the speed of 3.8-5.2m/min the wang aqueous solution that concentration is 5.5-8.5mol/L, can remove not by the ITO of the second solidification dry film covering.
S125: the NaOH solution being 0.6-1.8mol/l by the second ito thin film layer 16 by concentration with the speed of 4.0-5.4m/min, to wash away the second solidification dry film, to form Y-direction ITO circuit 12.Because the second solidification dry film is alkaline soluble, and ITO is insoluble to alkali, second ito thin film layer 16 is immersed with the speed of 4.0-5.4m/min the NaOH solution that concentration is 0.6-1.8mol/l, and effectively can remove the second solidification dry film, the Y-direction ITO circuit 12 covered under making the second solidification dry film appears.
S2: adopt an OCA optical cement layer 17 to be fit together with the second ito thin film layer 16 being provided with Y-direction ITO circuit 12 by the first ito thin film layer 15 being provided with X-direction ITO circuit 11, then ACF conducting resinl 19 (AnisotropicConductiveFilm is adopted, anisotropic conductive, hereinafter referred to as ACF conducting resinl 19) X-direction ITO extension line 112 and Y-direction ITO extension line 122 are tied in flexible circuit board 13.
S3: adopt the 2nd OCA optical cement layer 18 to be fitted on cover-plate glass 14 by the second ito thin film layer 16 being provided with Y-direction ITO circuit 12, complete the making of the capacitance touch screen of GFF structure.
Understandably, the capacitance touch screen of the GFF structure adopting the method for making of the capacitance touch screen of this GFF structure to produce, silver slurry line is substituted by ITO, expose together with peripheral frame line (X-direction ITO extension line 112 and Y-direction ITO extension line 122) when ITO exposes, development etches out, then X-direction ITO extension line 112 is directly connected with flexible circuit board 13 with Y-direction ITO extension line 122, its process, without the need to making silver slurry line separately to be connected with flexible circuit board 13 by ITO electrode line, is conducive to the cost saving elargol line.Starch line registering problem owing to there is not ITO electrode line with silver, silver slurry line also can be avoided to make or in use procedure, there is the appearance affecting the problem of finished product yield, ensure that the yield of the capacitance touch screen of GFF structure is more than 99%.In the method for making of the capacitance touch screen of this GFF structure, directly realize conducting function with ITO, thus save the production process of elargol line, effectively can simplify the manufacture craft of the capacitance touch screen of GFF structure, raising efficiency also effectively can reduce cost of manufacture.And, without the need to making silver slurry line in the method for making of the capacitance touch screen of this GFF structure, the synchronous Y-direction ITO electrode line 121 of X-direction ITO electrode line 111, X-direction ITO extension line 112 is ITO material with Y-direction ITO extension line 122 and is made, ITO material is transparent, is conducive to realizing the even Rimless design of narrow frame.
The present invention is described by above-mentioned specific embodiment, it will be appreciated by those skilled in the art that, without departing from the present invention, can also carry out various conversion and be equal to substituting to the present invention.In addition, for particular condition or concrete condition, various amendment can be made to the present invention, and not depart from the scope of the present invention.Therefore, the present invention is not limited to disclosed specific embodiment, and should comprise the whole embodiments fallen within the scope of the claims in the present invention.
Claims (9)
1. a capacitance touch screen for GFF structure, is characterized in that, comprises the first ito thin film layer (15), the second ito thin film layer (16) and flexible circuit board (13); Described first ito thin film layer (15) is provided with X-direction ITO circuit (11), and described X-direction ITO circuit (11) comprises integrated X-direction ITO electrode line (111) and X-direction ITO extension line (112); Described second ito thin film layer (16) is provided with Y-direction ITO circuit (12), and described Y-direction ITO circuit (12) comprises integrated Y-direction ITO electrode line (121) and Y-direction ITO extension line (122); Described X-direction ITO extension line (112) is connected with described flexible circuit board (13) with described Y-direction ITO extension line (122).
2. the capacitance touch screen of GFF structure according to claim 1, it is characterized in that, the capacitance touch screen of described GFF structure also comprises cover-plate glass (14), an OCA optical cement layer (17), the 2nd OCA optical cement layer (18) and ACF conducting resinl (19); Described first ito thin film layer (15) and described second ito thin film layer (16) are fitted by a described OCA optical cement layer (17), and described second ito thin film layer (16) and described cover-plate glass (14) are fitted by described 2nd OCA optical cement layer (18); Described X-direction ITO extension line (112) is connected by described ACF conducting resinl (19) with described flexible circuit board (13) with described Y-direction ITO extension line (122).
3. the capacitance touch screen of GFF structure according to claim 1, it is characterized in that, one minor face place of the capacitance touch screen of described GFF structure is provided with the link of described flexible circuit board (13), and described X-direction ITO extension line (112) is connected with described link respectively with described Y-direction ITO extension line (122).
4. the capacitance touch screen of the GFF structure according to any one of claim 1-3, it is characterized in that, the live width of described X-direction ITO electrode line (111) is 35-100um, and the live width of described Y-direction ITO electrode line (121) is 100-600um; The live width of described X-direction ITO extension line (112) and Y-direction ITO extension line (122) is 80-300um.
5. the capacitance touch screen of GFF structure according to claim 4, is characterized in that, the line-spacing of X-direction ITO electrode line (111) and Y-direction ITO electrode line (121) is 35-100um; The line-spacing of X-direction ITO extension line (112) is 80-300um; The line-spacing of Y-direction ITO extension line (122) is 80-300um.
6. the method for making of the capacitance touch screen of the GFF structure described in any one of claim 1-5, comprises the steps:
S1: at described first ito thin film layer (15) upper making X-direction ITO circuit (11); At described second ito thin film layer (16) upper making Y-direction ITO circuit (12); Described X-direction ITO circuit (11) comprises integrated X-direction ITO electrode line (111) and X-direction ITO extension line (112), and described Y-direction ITO circuit (12) comprises integrated Y-direction ITO electrode line (121) and Y-direction ITO extension line (122);
S2: described X-direction ITO extension line (112) and described Y-direction ITO extension line (122) are tied in flexible circuit board (13).
7. the method for making of the capacitance touch screen of GFF structure according to claim 6, is characterized in that, comprises in the upper step making X-direction ITO circuit (11) of described first ito thin film layer (15):
S111: be covered with the first dry film on the first ito thin film layer (15);
S112: the first printing opacity light shield is placed on described first ito thin film layer (15), and use the first printing opacity light shield described in parallel UV light permeability to be radiated on described first dry film to form the first solidification dry film; Described first printing opacity light shield comprises first unthreaded hole corresponding with X-direction ITO electrode line (111) and X-direction ITO extension line (112);
S113: the Na2CO3 solution with the speed of 3.6-5.0m/min by described first ito thin film layer (15) by concentration being 9-11g/l, to wash away uncured described first dry film;
S114: be the wang aqueous solution of 5.5-8.5mol/L by described first ito thin film layer (15) by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on described first ito thin film layer (15) that described first dry film that is not cured covers;
S115: be the NaOH solution of 0.6-1.8mol/l by described first ito thin film layer (15) by concentration with the speed of 4.0-5.4m/min, to wash away described first solidification dry film, to form described X-direction ITO circuit (11);
Comprise in the upper step making Y-direction ITO circuit (12) of described second ito thin film layer (16):
S121: be covered with the second dry film on the second ito thin film layer (16);
S122: the second printing opacity light shield is placed on described second ito thin film layer (16); And use the second printing opacity light shield described in parallel UV light permeability to be radiated on described second dry film to form the second solidification dry film; Described second printing opacity light shield comprises second unthreaded hole corresponding with Y-direction ITO electrode line (121) and Y-direction ITO extension line (122);
S123: the Na2CO3 solution with the speed of 3.6-5.0m/min by described second ito thin film layer (16) by concentration being 9-11g/l, to wash away the second uncured dry film;
S124: be the wang aqueous solution of 5.5-8.5mol/L by the second ito thin film layer (16) by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on described second thin layer that described second dry film that is not cured covers;
S125: be the NaOH solution of 0.6-1.8mol/l by the second ito thin film layer (16) by concentration with the speed of 4.0-5.4m/min, to wash away described second solidification dry film, to form described Y-direction ITO circuit (12).
8. the method for making of the capacitance touch screen of GFF structure according to claim 7, it is characterized in that, be 35-100um for the width of the part of irradiating described X-direction ITO electrode line (111) in described first unthreaded hole, the width for the part of irradiating described X-direction ITO extension line (112) is 80-300um; Be 100-600um for the width of the part of irradiating described Y-direction ITO electrode line (121) in described second unthreaded hole, the width for the part of irradiating described Y-direction ITO extension line (122) is 80-300um.
9. the method for making of the capacitance touch screen of GFF structure according to claim 8, it is characterized in that, be 35-100um for the spacing of the part of irradiating described X-direction ITO electrode line (111) in described first unthreaded hole, the spacing for the part of irradiating described X-direction ITO extension line (112) is 80-300um; Be 35-100um for the spacing of the part of irradiating described Y-direction ITO electrode line (121) in described second unthreaded hole, the spacing for the part of irradiating described Y-direction ITO extension line (122) is 80-300um.
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| CN111580703A (en) * | 2020-05-09 | 2020-08-25 | 芜湖伦丰电子科技有限公司 | GF2 touch screen and manufacturing method thereof |
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