CN105374741B - The method of wafer bonding and the bond member of wafer - Google Patents
The method of wafer bonding and the bond member of wafer Download PDFInfo
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- CN105374741B CN105374741B CN201410439755.1A CN201410439755A CN105374741B CN 105374741 B CN105374741 B CN 105374741B CN 201410439755 A CN201410439755 A CN 201410439755A CN 105374741 B CN105374741 B CN 105374741B
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Abstract
The present invention provides a kind of method of wafer bonding and the bond member of wafer, and the method for wafer bonding includes: to form multiple first protrusions in the first fitting end surfaces of the first wafer, has first gap between multiple first protrusions；Multiple second protrusions are formed in the second fitting end surfaces of the second wafer, there is Second gap, the Second gap can accommodate the first protrusion, and the first gap can accommodate the second protrusion between multiple second protrusions；Bonding technology is carried out to the first wafer and the second wafer, since the first protrusion, the size of the second protrusion are smaller compared with the first fitting end and the second fitting end, so that the contact surface that the first fitting end is bonded between end with second is divided into the lesser contact surface of multiple sizes, as the first protrusion, the recess of the second convex surfaces and caused by key and gap account for the ratio of contact surface and reduce, the real contact area at the first fitting end and the second fitting end effectively increases, and improves the quality of connection between wafer.
Description
Technical field
The present invention relates to the present invention relates to semiconductor fields, and in particular to a kind of method of wafer bonding and the key of wafer
Close component.
Background technique
Wafer scale copper-copper bonding (Wafer level Cu-Cu bonding) is used as 3D integrated circuit a key technology,
There is important application trend on high-end product.The bonding of wafer scale copper-copper is the interconnection technique between a kind of wafer, this interconnection skill
Multiple wafers are mutually aligned bonding by art, so that the fitting end that the copper-connection of multiple crystal column surfaces is exposed to crystal column surface is mutually pasted
It closes, to realize the electrical connection of interconnection structure between multiple wafers.Table of the wafer scale copper-copper bonding technology to copper-connection fitting end
Surface evenness requires very high, it is ensured that good contact.
But in wafer bonding, often there are bond voids between the fitting end of two wafers, this is easy to cause wafer
Between quality of connection be deteriorated the problem of.
Therefore the quality of connection after wafer bonding between wafer how is improved, it is urgently to be resolved to become those skilled in the art
The problem of.
Summary of the invention
Problems solved by the invention is to provide a kind of method of wafer bonding and the bond member of wafer, increases fitting end
Between real contact area, to improve the quality of connection between wafer.
To solve the above problems, the present invention provides a kind of method of wafer bonding, comprising:
First wafer and the second wafer are provided；
The first fitting end is formed in the first wafer；
Multiple first protrusions are formed on the surface at first fitting end, there is first gap between first protrusion；
The second fitting end is formed in the second wafer；
Multiple second protrusions are formed on the surface at second fitting end, there is Second gap between second protrusion,
Second protrusion is for being placed in the first gap, and the Second gap is for accommodating the first protrusion；
Bonding technology is carried out to the first wafer and the second wafer, the first fitting end and the second fitting end is made to be mutually aligned patch
It closes, so that the first protrusion is located in Second gap and is contacted with the second fitting end surfaces, be located at the second protrusion in first gap
And it is contacted with the first fitting end surfaces.
Optionally, include: the step of the first fitting of formation end in the first wafer
The first groove is formed in first wafer；
The first metal layer is filled in first groove to the surface for covering the first wafer；
Chemical mechanical grinding is carried out to the first metal layer, until exposing the surface of the first wafer, is located in the first groove
The first metal layer formed it is described first fitting end.
Optionally, include: in the step that the surface at first fitting end forms multiple first protrusions
First medium layer is formed on first wafer and the first fitting end；
Multiple the second grooves for exposing the first fitting end surfaces are formed in the first medium layer；
Second metal layer is filled in second groove to covering first medium layer surface；
Chemical mechanical grinding is carried out to the second metal layer, until exposing first medium layer surface, it is recessed to be located at multiple second
Second metal layer in slot forms multiple first protrusions；
Remove the first medium layer.
Optionally, include: the step of the second fitting of formation end in the second wafer
Third groove is formed in second wafer；
Third metal layer is filled in the third groove to the surface for covering the second wafer；
Chemical mechanical grinding is carried out to the surface for exposing the second wafer, in third groove to the third metal layer
Third metal layer forms second fitting end.
Optionally, forming the multiple second raised steps on second fitting end includes:
Second dielectric layer is formed in second wafer and the second fitting end surfaces；
Multiple the 4th grooves for exposing the first fitting end surfaces are formed in the second dielectric layer；
The 4th metal layer is filled in the 4th groove to covering second medium layer surface；
Chemical mechanical grinding is carried out to the 4th metal layer, until exposing second medium layer surface, it is recessed to be located at multiple four
The 4th metal layer in slot forms multiple second protrusions；
Remove the second dielectric layer.
Optionally, first protrusion is identical with the height of the second protrusion, in the range of 0.6 to 1.6 microns.
Optionally, make the upper surface rectangle of first protrusion and the second protrusion, first protrusion and the second protrusion
The area of upper surface is in the range of 4 square microns to 16 square micron.
Optionally, first protrusion and first gap are arranged in array in the first fitting end surfaces, and in line direction and
The first protrusion and first gap are alternately adjacent on column direction；Second protrusion and Second gap are in second coating surface
It is arranged in array, and the second protrusion and Second gap are staggeredly adjacent on line direction and column direction；First protrusion and institute
The position for stating Second gap is corresponding, and the size of the first protrusion is less than the size of Second gap；It is described second protrusion with it is described
The position of first gap is corresponding, and the size of the second protrusion is less than the size of first gap.
Optionally, first protrusion and the second protrusion are strip projected parts, and first gap and Second gap are strip gap.
Optionally, in the range of described first raised 2 microns to 4 microns of width with the second protrusion, the first gap
Width with Second gap is in the range of 4 microns to 6 microns.
Optionally, first protrusion is identical with the height of the second protrusion.
Optionally, in the step of carrying out bonding technology to the first wafer and the second wafer,
Temperature is in the range of 300 degrees Celsius to 500 degrees Celsius；
Pressure is in the range of 1MP to 2MP；
Time is in the range of 30 seconds to 90 seconds.
The present invention also provides a kind of bond member of wafer, the bond member of the wafer, which is set to, carries out bonding technology
On first wafer and the second wafer, comprising:
The first fitting end in the first wafer；Protrude from multiple first protrusions of the first fitting end surfaces, institute
Stating has first gap between the first protrusion；
The second fitting end in the second wafer；Multiple second protrusions for protruding from the second fitting end surfaces, are used
In being placed in the first gap in bonding technology, there is Second gap, the Second gap between second protrusion
For accommodating first protrusion in bonding technology.
Optionally, first protrusion is identical with the height of the second protrusion, in the range of 0.6 to 1.6 microns.
Optionally, the upper surface of first protrusion and the second protrusion is rectangle, in first protrusion and the second protrusion
The area on surface is in the range of 4 square microns to 16 square micron.
Optionally, first protrusion is arranged in the first fitting end surfaces in array-like；Second protrusion is in the second patch
End surfaces are closed to arrange in array-like；First protrusion is corresponding with the position of the Second gap, and the size of the first protrusion
Less than the size of Second gap；Second protrusion is corresponding with the position of the first gap, and the size of the second protrusion is small
In the size of first gap.
Optionally, first protrusion and the second protrusion are strip projected parts, and the first gap and Second gap are strip
Gap.
Optionally, for the width of first protrusion and the second protrusion in the range of 2 microns to 4 microns, described first is empty
The width of gap and Second gap is in the range of 4 microns to 6 microns.
Optionally, first protrusion is identical with the height of the second protrusion.
Optionally, first protrusion, the second protrusion, the first fitting end, the second material for being bonded end are copper.
Compared with prior art, technical solution of the present invention has the advantage that
In the present invention, since size is smaller compared with the first fitting end and the second fitting end for the first protrusion, the second protrusion, because
, in wafer bonding, the contact surface between the first wafer and the second wafer is the lesser raised contact surfaces of multiple sizes, accordingly for this
Ground, the recess size on the lesser raised contact surfaces of size is also smaller, can reduce key caused by the recess on contact surface and
Gap accounts for the ratio of contact surface, increase the first fitting end and second fitting end between real contact area, improve wafer it
Between quality of connection.
Detailed description of the invention
Fig. 1 to Fig. 3 is a kind of schematic diagram of wafer bonding method of the prior art；
Fig. 4 to Figure 14 is the schematic diagram of one embodiment of wafer bonding method of the present invention.
Specific embodiment
Often there are bond voids between the fitting end of two wafers, this is easy to cause in wafer bonding in the prior art
Quality of connection between wafer is deteriorated.
It makes point in conjunction with the process of wafer bonding to often occurring the reason of bond voids between the fitting end of two wafers
Analysis.
Referring to figs. 1 to Fig. 3, a kind of schematic diagram of wafer bonding method of the prior art is shown.
First wafer 01 as shown in Figure 1 is provided first, includes first medium layer 11 on the first wafer 01 and is located at first
Semiconductor structure in dielectric layer 11, and the first fitting end 12 exposed from the surface of first medium layer 11.In the first wafer
In the step of forming the first fitting end 12 on 01, general first corresponding first fitting, 12 shape of end of formation in first medium layer 11
Groove, then chemical mechanical grinding is carried out to layer on surface of metal with 11 forming metal layer on surface of first medium layer in the groove,
Remove the metal layer of segment thickness to first medium layer 11 is exposed, metal layer in the grooves forms the first fitting end 12.?
In the step of chemical mechanical grinding, lapping liquid is easy to assemble in the intermediate region at the first fitting end 12, so that grinding in chemical machinery
After mill, the intermediate region surface at the first fitting end 12 forms recess.
The second wafer 02 as shown in Figure 2 is provided, includes second dielectric layer 13 on the second wafer 02 and is located at second medium
Semiconductor structure in layer 14, and the second fitting end 14 exposed from the surface of second dielectric layer 13.Because of same reason,
In the step of forming the second fitting end 14 on the second wafer 02, the intermediate region surface at the second fitting end 14 is easily formed recessed
It falls into.
Make the first fitting end 12 in the step of carrying out bonding technology to the first wafer 01 and the second wafer 02 with reference to Fig. 3
It is bonded with the second fitting end 14 alignment, since the first fitting end 12 and the second fitting 14 surface of end have recess, in wafer bonding
Biggish bond voids 15 are formed between the first fitting end 12 and the second fitting end 14 later, and the first fitting end 12 and second is pasted
The real contact area very little for closing end 14 affects the bonding quality of the first wafer 01 and the second wafer 02, in turn results in be formed
Semiconductor devices failure.
In order to solve the above-mentioned technical problem, a kind of method that the present invention proposes wafer bonding, comprising: provide the first wafer and
Second wafer；The first fitting end is formed in the first wafer；Multiple first protrusions, institute are formed on the surface at first fitting end
Stating has first gap between the first protrusion；The second fitting end is formed in the second wafer；On the surface at second fitting end
Multiple second protrusions are formed, there is Second gap between second protrusion, second protrusion can be placed in described first
In gap, the Second gap can accommodate the first protrusion；Bonding technology is carried out to the first wafer and the second wafer, makes the first patch
It closes end and the second fitting end is mutually aligned fitting, the first protrusion is made to be located in Second gap and contact with the second fitting end surfaces,
The second protrusion is also set to be located in first gap and contact with the first fitting end surfaces.
Since size is smaller compared with the first fitting end and the second fitting end for the first protrusion, the second protrusion, in wafer
When bonding, contact surface between the first wafer and the second wafer is the lesser raised contact surfaces of multiple sizes, correspondingly, size compared with
Recess size on small raised contact surfaces is also smaller, can reduce key caused by the recess on contact surface and gap accounts for contact
The ratio in face increases real contact area between the first fitting end and the second fitting end, improves the connection matter between wafer
Amount.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
With reference to Fig. 4, the first wafer 10 is provided, in the present embodiment, the first wafer 10 includes substrate (not shown), the lining
Bottom is silicon substrate, and in other embodiments, the substrate can also partly lead for germanium silicon substrate or silicon-on-insulator substrate etc. are other
Body substrate does not do any restrictions to this present invention.
It in other embodiments, can also include labyrinth of the multilayer with semiconductor devices, the present invention in wafer 10
With no restriction to this.
With continued reference to Fig. 4, the first wafer includes interlayer dielectric layer 100 and the interconnection structure in dielectric layer 100
104。
Specifically, in the present embodiment, the material of the interlayer dielectric layer 100 is silica, in other embodiments, also
Other materials can be used, the material of the interlayer dielectric layer 100 can also be photosensitive benzocyclobutene or silicon nitride etc., this hair
The bright material to the interlayer dielectric layer 100 is with no restrictions.
In the present embodiment, the interconnection structure 104 in the interlayer dielectric layer 100 is copper-connection, but the present invention is right
With no restrictions, in other embodiments, the interconnection structure 104 can also be aluminium interconnection or copper aluminium to the material of interconnection structure 104
The interconnection structure of the other materials such as interconnection.
It should be noted that in other embodiments, multilayer interlayer dielectric layer and position can also be formed on substrate
Interconnection structure in interlayer dielectric layer, the invention is not limited in this regard.
With reference to Fig. 5, the first groove 105 is formed in the first wafer 10.
Specifically, in the present embodiment, the first groove 105 is formed in interlayer dielectric layer 100, forms the first groove 105
Method can use photoetching.Interconnection structure 104 is exposed in first groove, 105 bottom, so that formed in the first groove 105
First fitting end is electrically connected with interconnection structure 104.
In conjunction with reference Fig. 6, the first metal layer 106 is filled in first groove 105 to covering 10 surface of the first wafer.
Specifically, in the present embodiment, the material of the first metal layer 106 is copper, but the present invention is to the first metal
With no restrictions, in other embodiments, the first metal layer 106 can also be other metal materials, such as aluminium to the material of layer 106
Deng.
With reference to Fig. 7, chemical mechanical grinding is carried out to the first metal layer 106, until expose the surface of the first wafer 10,
The surface of interlayer dielectric layer 100 is exposed in the present embodiment, after chemical mechanical grinding.The first gold medal in the first groove 105
Belong to layer 106 and forms the first fitting end 101.
With reference to Fig. 8, first medium layer 108 is formed in first wafer 10 and the first fitting 101 surface of end.
Specifically, in the present embodiment, the material of first medium layer 108 is silica, but the present invention is to first medium layer
With no restrictions, in other embodiments, the material of first medium layer 108 can also be silicon nitride etc. to 108 specific material.
Multiple second grooves 109 are formed in the first medium layer 108 above the first fitting end 101, the multiple second
Expose the first fitting 101 surface of end in 109 bottom of groove.
With reference to Fig. 9, the table of second metal layer 110 to covering first medium layer 108 is filled in second groove 109
Face.
Specifically, in the present embodiment, the material of the second metal layer 110 is copper, but the present invention is to the second metal
With no restrictions, in other embodiments, the second metal layer 110 can also be other metal materials, such as aluminium to the material of layer 110
Deng.
In conjunction with reference Figure 10, chemical mechanical grinding is carried out to the second metal layer 110, until exposing first medium layer 108
Surface, the second metal layer 110 in multiple second grooves 109 form multiple first protrusions 102.
0 is continued to refer to figure 1, removes the first medium layer 108, exposes first fitting, 101 surface of end, multiple first
The original position of first medium layer 108 forms first gap 103 between protrusion 102.
In conjunction with reference Figure 11, the second wafer 20 is provided, is formed in the second wafer 20 and is exposed from the surface of the second wafer 20
The second fitting end 201, form multiple second protrusions 202 on second fitting, 201 surface of end, multiple second protrusions 202 it
Between have Second gap 203.
Second protrusion 202 is for being placed in the first gap 103, and the Second gap 203 is for accommodating the
One protrusion 102.
Form the second fitting end 201, the method for multiple second protrusions 202 is bonded end 101 with formation first, multiple first convex
Rise 102 and first gap 103 method it is similar, generally comprise:
Third groove (not shown) is formed in second wafer 20；Third metal layer is filled in the third groove
To covering 20 surface of the second wafer；Chemical mechanical grinding is carried out to the third metal layer (not shown), until exposing the second wafer
20 surfaces, the third metal layer in third groove form the second fitting end 201.
Include: in the step of the second fitting end surfaces form multiple second protrusions 202
Second dielectric layer (not shown) is formed in second wafer 20 and the second fitting 201 surface of end；In the second fitting
Multiple 4th groove (not shown) are formed in the second dielectric layer of 201 top of end, the multiple 4th bottom portion of groove exposes second
It is bonded 201 surface of end；The 4th metal layer (not shown) is filled in the 4th groove to covering second medium layer surface；To institute
It states the 4th metal layer and carries out chemical mechanical grinding, until exposing second medium layer surface, the second gold medal in multiple 4th grooves
Belong to layer and forms multiple second protrusions 202；It removes the second dielectric layer, exposes second fitting, 201 surface of end, multiple the
Second gap 203 is formed between two protrusions 202.
In the present embodiment, the material of the third metal layer and the 4th metal layer is copper.
It should be noted that in the present embodiment, keep first protrusion 102 identical with the height of the second protrusion 202, with
So that first protrusion 102 is contained in Second gap in the engineering for carrying out bonding technology to the first wafer 10 and the second wafer 20
After in 203, it can be contacted with the second fitting 201 surface of end；After being contained in the second protrusion 202 in first gap 103, Neng Gouyu
First fitting 201 surface of end contact.But whether the present invention does not do the height of the first protrusion 102 with the second protrusion 202 identical
Limitation, in other embodiments, the height of first protrusion 102 and the second protrusion 202 can have certain difference.
In the present embodiment, make range of the height of first protrusion 102 and the second protrusion 202 at 0.6 to 1.6 microns
Interior, the first protrusion 102 and the second protrusion 202 are not easy to damage in bonding technology within this range, and contact good.At it
In his embodiment, the depth difference with the 4th groove and the chemical mechanical grinding degree difference to second metal layer, second
The height of protrusion 202 can not also be in the range of 0.6 to 1.6 microns.
With reference to Figure 12, the top view on the first fitting 101 surface of end described in the present embodiment is shown.In the present embodiment,
Make the upper surface rectangle of first protrusion 102 and the second protrusion 202.
Specifically, as shown in figure 12, it is in battle array that first protrusion 102 and first gap 103, which are bonded 101 surface of end first,
Column arrangement, and the first protrusion 102 and first gap 103 are alternately adjacent on the line direction and column direction of array, constitute " a chess
Disk lattice " structure.
As shown in figure 13, it is in array that second protrusion 202 and Second gap 203, which are bonded 201 surface of end described second,
Arrangement, and the second protrusion 202 and Second gap 203 are alternately adjacent on line direction and column direction, constitute another " gridiron pattern "
Structure.
The gridiron pattern structure in gridiron pattern structure and the second wafer on first wafer is complementary relationship, specifically, the
One protrusion 102 is corresponding with the position of Second gap 203, and the second protrusion 202 is corresponding with the position of first gap 103.Meanwhile
The size of Second gap 203 is greater than the first protrusion 102, and the size of first gap 103 is greater than the size of the second protrusion 202, with
In subsequent wafer bonding technique, the first protrusion 102 can be contained in Second gap 203, and the second protrusion 202 can be contained in
In first gap 103, and certain pre- allowance is left in subsequent wafer bonding technique, make the first wafer 10 and the second wafer 20
Alignment have a certain deviation, the surface of the first protrusion 102 and the second protrusion 202 will not cause to damage because of contact.
The area of first protrusion 102 and the second raised 202 upper surfaces is in 4 square microns to the range of 16 square microns
It is interior.The area of first protrusion 102 and the second raised 202 upper surfaces is much smaller than the first fitting end 101 and the second fitting end 201
Therefore the area of upper surface can effectively reduce bond voids after wafer bonding technique and account for the first fitting end 101 and the second patch
Close the ratio of 201 contact surface of end.
With reference to Figure 14, bonding technology is carried out to the first wafer 10 and the second wafer 20, makes the first fitting end 101 and the second patch
It closes end 201 and is mutually aligned fitting, and be contained in the first protrusion 102 in Second gap 203, and be bonded 201 surface of end with second
Contact；It is contained in the second protrusion 202 in first gap 103, and is contacted with the first fitting 101 surface of end.
In the present embodiment, first on the first wafer 10 is bonded end 101 and second using wafer double-sided alignment technology
On wafer 20 second fitting end 201 is mutually aligned, can reduce the first fitting end 101 be bonded with second it is inclined between end 201
Difference.
It should be noted that wafer double-sided alignment technology is a kind of technique of alignment being aligned using infrared ray, but this hair
It is bright to this with no restriction, in other embodiments, can also be using the other technologies such as laser alignment by the on the first wafer 10
One fitting end 101 is bonded end 201 with second on the second wafer 20 and is mutually aligned.
It completes to carry out metal bonding technique after alignment, is bonded the first of the first wafer 10 on end 101 and wafer 20
Second fitting end 201 is mutually aligned fitting, applies certain mechanical pressure to the first wafer 10 and the second wafer 20, makes the first fitting
End 101 is bonded end 201 with second and firmly fits together.
In the step of carrying out metal bonding technique, the temperature in wafer bonding processing chamber is heated to 300 degrees Celsius
To in the range of 500 degrees Celsius, pressure carries out the time of metal bonding technique at 30 seconds to 90 seconds in the range of 1MP to 2MP
In the range of.
Since during bonding technology, the first protrusion 102 can be contained in Second gap 203, the second protrusion 202
It can be contained in first gap 103.After the first fitting end 101 and the second fitting end 201 are bonded in this way, the first fitting end
101 and second fitting end 201 real contact area with first be bonded end 101 and second be bonded end 201 area be not much different,
But multiple small contact surfaces have been divided into, the surface of each the i.e. first protrusion 102 of small contact surface or the second protrusion 202,
On the surface of first protrusion 102 or the second protrusion 202, the recess size formed by chemical mechanical grinding is smaller, so that first
Be bonded end 101 and after the second fitting end 201 is bonded, the first protrusion 102 or the second raised 202 depressions in the surface and caused by key and
The ratio that gap accounts for contact surface reduces, and the real contact area at the first fitting end 101 and the second fitting end 201 effectively increases, and makes
First fitting end 101 and second fitting end 201 be not susceptible to contact surface oxidation cause poor contact even open circuit the defects of,
Improve the quality of connection between the first wafer 10 and the second wafer 20.
First protrusion 102 of the rectangle that array-like is arranged in the present embodiment or the second protrusion 202, enable to the first fitting
The density of multiple small contact surfaces is larger on end 101 and the second fitting end 201, is conducive to increase contact area, improves the first wafer
10 and the second quality of connection between wafer 20.
It should be noted that the present invention to first protrusion 102 and second protrusion 202 shape with no restrictions, in other realities
It applies in example, makes first protrusion 102 and the second protrusion 202 can also be strip projected parts, first gap 103 and Second gap
203 be strip gap.
Specifically, the width of the first protrusion 102 and the second protrusion 202 that can make the strip is at 2 microns to 4 microns
In range, the width of the first gap 103 and Second gap 203 that make the strip is in the range of 4 microns to 6 microns.It is described
The first gap 103 of strip and the width of Second gap 203 are slightly larger than the first protrusion 102 of the strip and the second protrusion 202
Width, enable first gap 103 and Second gap 203 to accommodate the first protrusion 102 and second protrusion 202, and subsequent
Wafer bonding technique in leave certain pre- allowance, when so that the alignment of the first wafer 10 and the second wafer 20 having certain deviation,
The surface of first protrusion 102 and the second protrusion 202 will not cause to damage because of contact.
It should also be noted that, the method for wafer bonding of the present invention is not limited to the bonding between in two wafers, also it is applicable in
Bonding between multiple wafers.When carrying out bonding technology to multiple wafers, in part, patch is all arranged in the upper and lower surface of wafer
End is closed, is respectively formed protrusion and the gap between multiple protrusions in the fitting end surfaces of multiple wafers, so that multiple wafers
Gap on fitting end can accommodate protrusion.In bonding technology between multiple wafers, keep the fitting end of multiple wafers mutual
Alignment fitting, and it is contained in protrusion in gap, and contact with fitting end surfaces, and then improve the connection matter between multiple wafers
Amount.
The present invention also provides a kind of bond members of wafer, are set on the first wafer and the second wafer of bonding technology.
In the present embodiment, 0, Figure 11 can be continued to refer to figure 1, the bond member of the wafer is set to the first wafer 10
On the second wafer 20.
The bond member of the wafer includes:
The first fitting end 101 in the first wafer 10；Protrude from multiple the first of first fitting, 101 surface of end
Protrusion 102 has first gap 103 between first protrusion 102.
The second fitting end 201 in the second wafer 20；Protrude from multiple the of second fitting, 201 surface of end
Two protrusions 202 have second for being placed on 103 in the first gap in bonding technology between second protrusion 202
Gap 203, the Second gap 203 in bonding technology for accommodating first protrusion 102.
It should be noted that in the present embodiment, first protrusion 102, the second protrusion 202, first fitting end 101,
The material at the second fitting end 201 is copper.But the present invention to the first protrusion 102, the second protrusion 202, first fitting end 101,
The material at the second fitting end 201 with no restrictions, in other embodiments, paste by first protrusion 102, the second protrusion 202, first
Closing end 101, second and being bonded the material at end 201 can also be other metal materials, such as aluminium.
It should be noted that in the present embodiment, first protrusion 102 is identical with the height of the second protrusion 202, so that
It obtains in the engineering for carrying out bonding technology to the first wafer 10 and the second wafer 20, the first protrusion 102 is contained in Second gap 203
In after, can with second fitting 201 surface of end contact；It, can be with after being contained in the second protrusion 202 in first gap 103
One fitting 201 surface of end contact.But whether the present invention does not limit the height of the first protrusion 102 with the second protrusion 202 identical
System, in other embodiments, the height of first protrusion 102 and the second protrusion 202 can have certain difference.
In the present embodiment, range of the height of first protrusion 102 and the second protrusion 202 at 0.6 to 1.6 microns
It is interior.The first protrusion 102 and the second protrusion 202 are not easy to damage in bonding technology within this range, and contact good.At it
In his embodiment, the height of the second protrusion 202 can not also be in the range of 0.6 to 1.6 microns.
2,13 can be continued to refer to figure 1, the first fitting end 101 described in the present embodiment and the second fitting end are respectively illustrated
The top view on 201 surfaces.In the present embodiment, make the upper surface rectangle of first protrusion 102 and the second protrusion 202.Institute
The area of the first raised 102 and second protrusion 202 is stated in the range of 4 square microns to 16 square micron.First raised 102 Hes
The area of second raised 202 upper surfaces is bonded the area of 201 upper surface of end much smaller than the first fitting end 101 and second, because
This, bond voids can be effectively reduced after wafer bonding technique and account for the first fitting end 101 and the second fitting 201 contact surface of end
Ratio.
Specifically, as shown in figure 12, it is in battle array that first protrusion 102 and first gap 103, which are bonded 101 surface of end first,
Column arrangement, and the first protrusion 102 and first gap 103 are alternately adjacent on the line direction and column direction of array, constitute " a chess
Disk lattice " structure.
As shown in figure 13, it is in array that second protrusion 202 and Second gap 203, which are bonded 201 surface of end described second,
Arrangement, and the second protrusion 202 and Second gap 203 are alternately adjacent on line direction and column direction, constitute another " gridiron pattern "
Structure.
The gridiron pattern structure in gridiron pattern structure and the second wafer on first wafer is complementary relationship, specifically, the
One protrusion 102 is corresponding with the position of Second gap 203, and the second protrusion 202 is corresponding with the position of first gap 103.Meanwhile
The size of Second gap 203 is greater than the first protrusion 102, and the size of first gap 103 is greater than the size of the second protrusion 202, with
In subsequent wafer bonding technique, the first protrusion 102 can be contained in Second gap 203, and the second protrusion 202 can be contained in
In first gap 103, and certain pre- allowance is left in subsequent wafer bonding technique, so that the first wafer 10 and the second wafer
When 20 alignment has certain deviation, the surface of the first protrusion 102 and the second protrusion 202 will not cause to damage because of contact.
The area of first protrusion 102 and the second raised 202 upper surfaces is in 4 square microns to the range of 16 square microns
It is interior.The area of first protrusion 102 and the second raised 202 upper surfaces is much smaller than the first fitting end 101 and the second fitting end 201
Therefore the area of upper surface can effectively reduce bond voids after wafer bonding technique and account for the first fitting end 101 and the second patch
Close the ratio of 201 contact surface of end.
In this way when being seized to the first wafer and the second wafer and technique, by the first fitting end 101 and the second fitting
After 201 fitting of end, the real contact area at the first fitting end 101 and the second fitting end 201 is bonded end 101 and the second patch with first
The area for closing end 201 is not much different, but has been divided into multiple small contact surfaces, each small contact surface i.e. the first protrusion 102
Or second protrusion 202 surface, first protrusion 102 or second protrusion 202 surface on, due to chemical mechanical grinding formed
The size that is recessed is smaller, so that after the first fitting end 101 and the second fitting end 201 are bonded, the first protrusion 102 or the second protrusion
202 depressions in the surface and caused by key and gap account for contact surface ratio it is smaller, the first fitting end 101 and the second fitting end 201
Real contact area effectively increase so that first fitting end 101 and second fitting end 201 be not easy to make due to the oxidation of contact surface
The defects of even breaking at poor contact, improve the quality of connection between the first wafer 10 and the second wafer 20.
Using the first protrusion 102 or the second protrusion 202 of the rectangle that array-like in the present embodiment is arranged, first is enabled to
The density for being bonded end 101 and the second fitting multiple small contact surfaces in 201 surface of end is larger, is conducive to increase contact area, improve
Quality of connection between first wafer 10 and the second wafer 20.
It should be noted that the present invention to first protrusion 102 and second protrusion 202 shape with no restrictions, in other realities
It applies in example, makes first protrusion 102 and the second protrusion 202 can also be strip, first gap 103 and Second gap 203 are
Strip.The width of the first protrusion 102 and the second protrusion 202 that make the strip makes described in the range of 2 microns to 4 microns
The first gap 103 of strip and the width of Second gap 203 are in the range of 4 microns to 6 microns.The first gap of the strip
103 and Second gap 203 width slightly larger than the strip first protrusion 102 and second protrusion 202 width so that first
Gap 103 and Second gap 203 can accommodate the first protrusion 102 and the second protrusion 202, and in subsequent wafer bonding technique
Certain pre- allowance is left, when so that the alignment of the first wafer 10 and the second wafer 20 having certain deviation, the first protrusion 102 and second
The surface of protrusion 202 will not be in contact and cause to damage.
It should be noted that the bond member of wafer of the present invention can be set on multiple first wafers and the second wafer,
The bond member of the wafer can be all arranged in the upper and lower surface of part of first wafer or the second wafer, in multiple wafers
It is in bonding technology, multiple first wafers and the second wafer are bonding to each other, can be improved multiple first wafers and the second wafer it
Between quality of connection.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of method of wafer bonding characterized by comprising
First wafer and the second wafer are provided；
The first fitting end is formed in the first wafer；
Multiple first protrusions are formed on the surface at first fitting end, there is between first protrusion first gap, first
The size in gap is greater than the size of the second protrusion, forms the step packet of multiple first protrusions on the surface at first fitting end
It includes: forming first medium layer on first wafer and the first fitting end；Multiple exposings are formed in the first medium layer
Second groove of the first fitting end surfaces；Second metal layer is filled in second groove to covering first medium layer surface；
Chemical mechanical grinding is carried out to the second metal layer, to exposing first medium layer surface, in multiple second grooves the
Two metal layers form multiple first protrusions；Remove the first medium layer；
The second fitting end is formed in the second wafer；
Multiple the second protrusions for being placed in first gap, second protrusion are formed on the surface at second fitting end
Between there is Second gap for accommodating the first protrusion, the size of Second gap is greater than the first bump sizes, described second
The step that multiple second protrusions are formed on fitting end includes: to form second medium in second wafer and the second fitting end surfaces
Layer；Multiple the 4th grooves for exposing the first fitting end surfaces are formed in the second dielectric layer；It is filled out in the 4th groove
The 4th metal layer is filled to covering second medium layer surface；Chemical mechanical grinding is carried out to the 4th metal layer, until exposing second
Dielectric layer surface, the 4th metal layer in multiple 4th grooves form multiple second protrusions；Remove the second dielectric layer；
First protrusion and first gap are arranged in array in the first fitting end surfaces, and in the line direction and column direction of array
Upper first protrusion and first gap are alternately adjacent, constitute " gridiron pattern " structure；Second protrusion and Second gap are in institute
It states the second fitting end surfaces to be arranged in array, and the second protrusion and Second gap are alternately adjacent on line direction and column direction,
Another " gridiron pattern " structure is constituted, the gridiron pattern structure on the first wafer is complementary close with the gridiron pattern structure on the second wafer
System；
Bonding technology is carried out to the first wafer and the second wafer, so that the first fitting end and the second fitting end is mutually aligned fitting, makes
First protrusion is located in Second gap and contacts with the second fitting end surfaces, is located at the second protrusion in first gap and with the
One fitting end surfaces contact.
2. the method as described in claim 1, which is characterized in that the step of the first fitting of formation end includes: in the first wafer
The first groove is formed in first wafer；
The first metal layer is filled in first groove to the surface for covering the first wafer；
Chemical mechanical grinding is carried out to the first metal layer, to the surface of the first wafer of exposing, in the first groove the
One metal layer forms first fitting end.
3. the method as described in claim 1, which is characterized in that the step of the second fitting of formation end includes: in the second wafer
Third groove is formed in second wafer；
Third metal layer is filled in the third groove to the surface for covering the second wafer；
The surface that chemical mechanical grinding extremely exposes the second wafer is carried out to the third metal layer, the third in third groove
Metal layer forms second fitting end.
4. the method as described in claim 1, which is characterized in that first protrusion is identical with the height of the second protrusion.
5. the method as described in claim 1, which is characterized in that make the upper surface square of first protrusion and the second protrusion
The area of shape, first protrusion and the second upper convex surface is in the range of 4 square microns to 16 square micron.
6. the method as described in claim 1, which is characterized in that it is described first protrusion and second protrusion be strip projected parts, first
Gap and Second gap are strip gap.
7. method as claimed in claim 6, which is characterized in that the width of first protrusion and the second protrusion is at 2 microns to 4
In the range of micron, the width of the first gap and Second gap is in the range of 4 microns to 6 microns.
8. the method as described in claim 1, which is characterized in that the step of carrying out bonding technology to the first wafer and the second wafer
In,
Temperature is in the range of 300 degrees Celsius to 500 degrees Celsius；
Pressure is in the range of 1MP to 2MP；
Time is in the range of 30 seconds to 90 seconds.
9. a kind of bond member of wafer is set on the first wafer and the second wafer for carrying out bonding technology, which is characterized in that
Include:
The first fitting end in the first wafer；Protrude from multiple first protrusions of the first fitting end surfaces, described the
There is first gap, the size of first gap is greater than the size of the second protrusion, protrudes from first fitting end between one protrusion
Multiple the first of surface project through following steps and are formed: forming first medium on first wafer and the first fitting end
Layer；Multiple the second grooves for exposing the first fitting end surfaces are formed in the first medium layer；It is filled out in second groove
Second metal layer is filled to covering first medium layer surface；Chemical mechanical grinding is carried out to the second metal layer, until exposing first
Dielectric layer surface, the second metal layer in multiple second grooves form multiple first protrusions；Remove the first medium layer；
The second fitting end in the second wafer；Multiple second protrusions for protruding from the second fitting end surfaces, are used for
It is placed in bonding technology in the first gap, there is Second gap between second protrusion, the size of Second gap is big
In the first bump sizes, the Second gap is described to protrude from described for accommodating first protrusion in bonding technology
Multiple the second of two fitting end surfaces project through following steps and are formed: being formed in second wafer and the second fitting end surfaces
Second dielectric layer；Multiple the 4th grooves for exposing the first fitting end surfaces are formed in the second dielectric layer；The described 4th
The 4th metal layer of filling extremely covering second medium layer surface in groove；Chemical mechanical grinding is carried out to the 4th metal layer, until
Expose second medium layer surface, the 4th metal layer in multiple 4th grooves forms multiple second protrusions；Remove described
Second medium layer；
First protrusion and first gap are arranged in array in the first fitting end surfaces, and in the line direction and column direction of array
Upper first protrusion and first gap are alternately adjacent, constitute " gridiron pattern " structure；Second protrusion and Second gap are in institute
It states the second fitting end surfaces to be arranged in array, and the second protrusion and Second gap are alternately adjacent on line direction and column direction,
Another " gridiron pattern " structure is constituted, the gridiron pattern structure on the first wafer is complementary close with the gridiron pattern structure on the second wafer
System.
10. bond member as claimed in claim 9, which is characterized in that first protrusion is identical with the height of the second protrusion,
In the range of 0.6 to 1.6 microns.
11. bond member as claimed in claim 9, which is characterized in that the upper surface of first protrusion and the second protrusion is
The area of rectangle, first protrusion and the second upper convex surface is in the range of 4 square microns to 16 square micron.
12. bond member as claimed in claim 9, which is characterized in that first protrusion and the second protrusion are strip projected parts,
The first gap and Second gap are strip gap.
13. bond member as claimed in claim 12, which is characterized in that the width of first protrusion and the second protrusion is 2
Micron is in the range of 4 microns, and the width of the first gap and Second gap is in the range of 4 microns to 6 microns.
14. bond member as claimed in claim 9, which is characterized in that first protrusion is identical with the height of the second protrusion.
15. bond member as claimed in claim 9, which is characterized in that it is described first protrusion, second protrusion, first fitting end,
The material at the second fitting end is copper.
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| CN111599693B (en) * | 2019-02-20 | 2022-07-12 | 昆山微电子技术研究院 | Bonding method |
| CN110112097A (en) * | 2019-05-21 | 2019-08-09 | 德淮半导体有限公司 | The production method of wafer bonding structure and wafer bonding structure |
| CN110896025A (en) * | 2019-10-28 | 2020-03-20 | 芯盟科技有限公司 | Wafer bonding method and bonded wafer |
| CN111580265B (en) * | 2020-04-28 | 2023-02-28 | 北京理工大学重庆微电子研究院 | Micro-electromechanical system micro-mirror and manufacturing method thereof |
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| US6406636B1 (en) * | 1999-06-02 | 2002-06-18 | Megasense, Inc. | Methods for wafer to wafer bonding using microstructures |
| US20050003650A1 (en) * | 2003-07-02 | 2005-01-06 | Shriram Ramanathan | Three-dimensional stacked substrate arrangements |
| US8241995B2 (en) * | 2006-09-18 | 2012-08-14 | International Business Machines Corporation | Bonding of substrates including metal-dielectric patterns with metal raised above dielectric |
| US8119500B2 (en) * | 2007-04-25 | 2012-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer bonding |
| EP2273545B1 (en) * | 2009-07-08 | 2016-08-31 | Imec | Method for insertion bonding and kit of parts for use in said method |
| CN103730382B (en) * | 2013-12-24 | 2016-08-24 | 华进半导体封装先导技术研发中心有限公司 | A kind of manufacture method of copper-copper bonding salient points |
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