CN111599693B - Bonding method - Google Patents
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- CN111599693B CN111599693B CN201910126250.2A CN201910126250A CN111599693B CN 111599693 B CN111599693 B CN 111599693B CN 201910126250 A CN201910126250 A CN 201910126250A CN 111599693 B CN111599693 B CN 111599693B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Abstract
The invention provides a bonding method, which comprises the following steps: a) processing the upper substrate to form a plurality of bulges on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves; b) and coating copper nano soldering paste on the bonding surface of the lower substrate, and bonding the upper substrate and the lower substrate under a pressurizing condition to obtain the connecting piece. According to the invention, the embedded structure of the projection and the groove is designed for bonding, and the thickness of the soldering paste can be well controlled by extruding and embedding the copper nano paste in the groove, so that more uniform soldering paste is formed, bonding defects are reduced, and the product strength is improved.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a bonding method.
Background
With the continuous progress of semiconductor preparation technology, the demand of various industries on the capacity of power electronic devices is more and more, and the requirements on the performance and the power of the electronic power devices are also more and more high, so that high-power electronic devices are generated. The main application of the energy-saving power supply comprises frequency conversion, rectification, voltage transformation, power amplification, power control and the like, and the energy-saving power supply has an energy-saving effect. The high-power semiconductor device is widely applied to the power electronic fields of mobile communication, consumer electronics, new energy traffic, rail traffic, industrial control, power generation, power distribution and the like. The high-power electronic device plays a key role in strategic fields such as military and the like, and is a key part in realizing autonomous controllable core components in the fields of high-speed rail power systems, automobile power systems, consumption and communication electronic systems and the like, and the strategic position is prominent.
The interconnection packaging is a key link for preparing or assembling the power electronic device, and has important influence on the performance of the device. Bonding is a common interconnection packaging technology in power electronic devices, and refers to bonding two substrates into a whole under certain conditions, and usually bonding/welding of the two substrates is achieved by means of solder.
With the continuous improvement of power and operating temperature of power electronic devices, the heat dissipation performance and reliability of device modules become the major bottleneck in the development and application of power electronic technology. In contrast, the conventional solder bonding technology cannot meet the requirements of high-power electronic devices on heat dissipation and reliability, and a novel low-cost, high-thermal-conductivity and high-reliability connection technology becomes a research hotspot in the world. At present, the sintering connection technology of the copper nanometer soldering paste is greatly developed and is applied to the packaging technology of electronic devices.
The copper-copper SAB direct bonding technique is a relatively common bonding technique because other solders form an intermediate layer with poor thermal conductivity, but the technique suffers from roughness of the copper surface, especially the copper plate surface of the direct bond substrate (DCB). The roughness of the bonding surface directly affects the bonding effect, and even leads to many micron-sized holes at the interface.
At present, the common solution is to perform chemical mechanical polishing on the substrates to be bonded before bonding. However, the chemical mechanical polishing is complicated and time-consuming, has high cost, has poor bonding improvement effect, is still prone to generate hole defects, and has poor bonding strength.
Disclosure of Invention
In view of the above, the present invention provides a bonding method, which can effectively reduce bonding defects and improve shear strength.
The invention provides a bonding method, which comprises the following steps:
a) processing the upper substrate to form a plurality of bulges on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves;
b) and coating copper nano soldering paste on the bonding surface of the lower substrate, and bonding the upper substrate and the lower substrate under a pressurizing condition to obtain the connecting piece.
Preferably, the pressurizing pressure is 10-500 MPa;
the bonding temperature is less than or equal to 280 ℃.
Preferably, the bonding is performed in a reducing atmosphere.
Preferably, the reducing gas includes formic acid gas, or includes formic acid gas and inert gas.
Preferably, the formic acid gas is subjected to Pt catalytic treatment.
Preferably, the flow rate of the formic acid gas is 30-40 sccm; the flow rate of the inert gas is 40-60 sccm.
Preferably, the cross-sectional shape of the protrusion comprises a square shape, a rectangular shape, a semicircular shape, a triangular shape or a trapezoidal shape; the cross-sectional shape of the groove comprises a square shape, a rectangular shape, a semicircular shape, a triangular shape or a trapezoidal shape.
Preferably, the protrusions are equal-section protrusions or non-equal-section protrusions; the groove is a uniform section groove or a non-uniform section groove;
the non-uniform cross-section protrusions comprise hemispherical protrusions; the non-uniform cross-section groove comprises a hemispherical groove.
Preferably, the step b) includes:
substrates are respectively fixed on the non-bonding surface of the upper substrate and the non-bonding surface of the lower substrate, and the bonding of the upper substrate and the lower substrate is realized by pressurizing the substrates;
the thickness of the substrate is 200-1000 μm.
Preferably, the upper substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate;
the lower substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate.
The invention provides a bonding method, which comprises the following steps: a) processing the upper substrate to form a plurality of bulges on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves; b) and coating copper nano soldering paste on the bonding surface of the lower substrate, and bonding the upper substrate and the lower substrate under a pressurizing condition to obtain the connecting piece. In the bonding method provided by the invention, firstly, the bonding surfaces of two substrates to be bonded are respectively provided with a one-to-one corresponding bulge and groove structure, and the volume of the bulge is smaller than that of the groove, so that the bulge and the groove can be embedded one by one; coating copper nano-soldering paste on the bonding surface of the lower substrate, bonding under a pressurizing condition, gradually pressing the protrusion into the groove in the bonding process, and slowly filling the copper nano-soldering paste in the groove into the interface of the protrusion and the groove along with continuous pressurization to form uniform soldering paste so as to bond the upper substrate and the lower substrate.
In the prior art, the method for directly coating the copper nano soldering paste on the polished substrate is difficult to control the thickness and the uniformity of the soldering paste, and particularly, a surface modifier is usually needed to adjust the fluidity of the soldering paste so as to control the thickness of the soldering paste, and finally the surface modifier is removed, so that a plurality of holes are formed on the interface of the soldering paste; in addition, during pressure bonding, the solder paste is unevenly distributed, mostly thick in the middle and thin at the edge, which affects the bonding effect and the product strength. Compared with the prior art, the bonding method has the following beneficial effects:
the embedded structure of the projection and the groove is designed for bonding, and the copper nano-paste in the groove is extruded and embedded, so that the thickness of the soldering paste can be well controlled, the dependence on a surface modifier is reduced, the void ratio is reduced, and the overall bonding strength is improved. Meanwhile, when the external force is applied, the embedded structure bears the stress, so that the influence of the external force on the transverse deformation is reduced, and the shearing strength is improved. In addition, in the pressurizing process, the copper nano soldering paste in the groove can slowly fill the interface of the protrusion and the groove to form more uniform soldering paste, the thickness of the soldering paste is better controlled, and the bonding effect is favorably improved and the product strength is favorably improved. In addition, the embedded bonding structure has larger connecting area and is also beneficial to improving the connecting strength.
Test results show that the interface porosity of the connecting piece prepared by the bonding method is below 70%, the shear strength is above 19MPa, the interface defect is obviously reduced, and the product strength is improved; in the bonding method, the introduction of the reducing gas is beneficial to further reducing the interface defects and improving the shear strength of the connecting piece, so that the interface porosity is reduced to below 50 percent, and the shear strength is improved to above 25 MPa.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic view of a solder paste distribution after bonding according to the present invention; wherein, FIG. 1a is a schematic view of a continuous distribution,
FIG. 1b is a schematic view of a closed distribution;
fig. 2 is a schematic diagram of a bonding process in an embodiment of the invention.
Detailed Description
The invention provides a bonding method, which comprises the following steps:
a) processing the upper substrate to form a plurality of bulges on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves;
b) and coating copper nano soldering paste on the bonding surface of the lower substrate, and bonding the upper substrate and the lower substrate under a pressurizing condition to obtain the connecting piece.
In the bonding method provided by the invention, the bonding surfaces of two substrates to be bonded are respectively provided with a one-to-one corresponding protrusion and groove structure, the protrusions and the grooves can be embedded one by one, and the volume of the protrusions is smaller than that of the grooves; coating copper nano-soldering paste on the bonding surface of the lower substrate, bonding under a pressurizing condition, gradually pressing the protrusion into the groove in the bonding process, and slowly filling the copper nano-soldering paste in the groove into the interface of the protrusion and the groove along with continuous pressurization to form uniform soldering paste so as to bond the upper substrate and the lower substrate.
According to the invention, the upper substrate is firstly processed, so that a plurality of bulges are formed on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves.
In the present invention, two substrates to be bonded are first subjected to surface treatment. The substrate of the present invention is not particularly limited in kind, and may be any substrate known to those skilled in the art for use in electronic packaging, including commonly used metals and semiconductors. Preferably, the upper substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate; the lower substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate.
In the present invention, when the bonding surfaces of the two substrates to be bonded are respectively formed with the protrusion and the groove structures, the processing means used is not particularly limited, and may be according to the processing method known to those skilled in the art, such as etching by etchant such as ferric chloride, or processing by laser processing.
In the invention, the number and the interval of the bulges on the surface of the upper substrate and the number and the interval of the grooves on the surface of the lower substrate are not particularly limited, so that the bulges of the upper substrate correspond to the grooves of the lower substrate one by one. In the invention, the volume of the protrusion is smaller than that of the groove, so that the protrusion can be conveniently embedded into the groove and an extrusion filling space is reserved for the copper nano-soldering paste in the groove, the copper nano-soldering paste is uniformly distributed and filled on a connecting interface, and the thickness of the soldering paste in bonding can be better controlled. In the invention, preferably, the length of the protrusion is 0.5-1 mm smaller than the depth of the groove.
In the present invention, since the volume of the protrusion is smaller than that of the groove, after bonding, the solder paste at the interface between the upper and lower substrates can be distributed continuously or in a closed manner, referring to fig. 1, fig. 1 is a schematic diagram of the distribution of the solder paste after bonding according to the present invention, wherein fig. 1a is a schematic diagram of the continuous distribution, and fig. 1b is a schematic diagram of the closed distribution. Under the condition of continuous distribution, the upper substrate and the lower substrate are completely connected together by the copper nano soldering paste; under the condition of closed distribution, besides the connection function of the copper nanometer soldering paste, the connection function of directly bonding the upper substrate and the lower substrate is also realized.
The shape of the protrusions and grooves is not particularly limited in the present invention, and preferably includes a square, rectangle, semicircle, triangle or trapezoid. The bulges and the grooves can be of uniform section structures or non-uniform section structures. The protrusions and the grooves of the non-uniform cross-section structure comprise hemispherical structures. In the present invention, the shape of the protrusion and the groove is preferably identical.
According to the invention, after the upper substrate and the lower substrate are subjected to surface treatment to form mutually matched protrusion and groove structures, the bonding surface of the lower substrate is coated with the nano soldering paste, and the upper substrate and the lower substrate are bonded under the pressurizing condition to obtain the connecting piece.
The present invention is not particularly limited in kind of the copper nano-solder paste, and conventional copper nano-solder paste well known to those skilled in the art may be used. In the copper nano-soldering paste, the particle size of copper nano-particles is preferably 50-800 nm.
When the copper nano soldering paste is coated, the coating thickness of the copper nano soldering paste is not particularly limited, the copper nano soldering paste can be adjusted according to actual needs, and the thickness of the copper nano soldering paste can be lower than the depth of the groove, so that the copper nano soldering paste is completely contained in the groove; the thickness of the soldering paste can also be higher than the depth of the groove, so that the soldering paste completely submerges the groove and is continuously distributed on the bonding surface of the lower substrate.
In the present invention, after the solder paste is applied, the upper and lower substrates are subjected to pressure bonding treatment. Preferably, a substrate is fixed to the non-bonding surface of the upper substrate and the non-bonding surface of the lower substrate, respectively, and the bonding of the upper substrate and the lower substrate is achieved by pressing the substrates. The substrate acts as a gasket, that is, when the pressure is applied, the pressure is not directly applied to the surfaces of the upper and lower base plates, but is applied to the substrate, and the pressure is transmitted to the upper and lower base plates through the substrate. Specifically, before bonding, the substrates are respectively fixed on the non-bonding surfaces (i.e. the other surface back to the bonding surface) of the upper substrate and the lower substrate in advance; the invention has no special limitation on the fixing mode, and the substrate is required to be detached after the bonding is finished, so that the simple fixing can be carried out, for example, the fixing can be carried out through a clamp. In order to facilitate the operation, the substrate fixing of the lower substrate can be completed before the copper nano-soldering paste is coated, and the copper nano-soldering paste is coated after the substrate is fixed on the lower substrate.
The invention has no special limitation on the type of the substrate, and in order to improve the stress uniformity of the lower substrate, the substrate is preferably a substrate with Young modulus less than or equal to 410 GPa; specifically, the plate includes an alumina plate, a silicon carbide plate or a silica plate. In the invention, in order to improve the stress uniformity and meet the requirement of a cavity space during bonding, the thickness of the substrate is preferably 200-1000 μm.
In the invention, the substrate is fixed on the upper and lower substrates, and the lower substrate is coated with copper nano-soldering paste, and then bonding treatment is carried out. In the present invention, the bonding is performed under a pressurized condition, and the pressurized pressure is preferably 10 to 500MPa, more preferably 10 to 200MPa, and further preferably 20 to 30 MPa.
In the invention, the bonding temperature is preferably 20-280 ℃, more preferably 100-280 ℃, and most preferably 200-280 ℃. In the present invention, it is preferable that the pressurization is started after the heating to the target temperature. In the present invention, after pressurization to a target pressure, heat preservation and pressure holding are preferably performed; the time for heat preservation and pressure maintaining is preferably 1-100 min, and more preferably 30-100 min. In the present invention, the bonding may be performed by means of a heating and pressurizing furnace, and the bonding conditions are provided by a pressurizing and heating furnace.
In the present invention, the bonding is preferably performed in a reducing gas atmosphere. The reducing gas preferably includes formic acid gas, or includes formic acid gas and inert gas. The inert gas used in the present invention is not particularly limited, and may be an inert shielding gas known to those skilled in the art, such as nitrogen, helium, argon, etc. Bonding is carried out in the reducing gas environment, so that an oxide layer on the surface of copper particles in the copper nano-soldering paste can be removed, the attractive force bonding effect among atoms is promoted, and bonding is carried out more effectively.
Before bonding, introducing reducing gas into the processing chamber in advance to provide reducing atmosphere for bonding, and continuing until the bonding is finished; wherein the flow rate of the formic acid gas is preferably 30-40 sccm; the flow rate of the inert gas is preferably 40-60 sccm.
In the invention, the formic acid gas is preferably formic acid gas subjected to Pt catalysis treatment, and the formic acid gas subjected to Pt catalysis can be used for effectively removing an oxide layer on the surface of copper particles in the copper nano soldering paste, so that the bonding effect is further improved, and the bonding strength is improved. The method for the catalytic treatment of Pt is not particularly limited, and the Pt can be treated in a catalytic gas manner well known to those skilled in the art, for example, formic acid gas can be catalyzed by flowing through a heated Pt sheet, and the heating temperature is preferably 140-160 ℃; in some embodiments, the formic acid gas used is one catalyzed by a Pt sheet at 150 ℃.
In the invention, under reducing atmosphere and target temperature, after pressurization and heat preservation and pressure maintaining, the connection of an upper base plate and a lower base plate is realized, and then post-treatment such as cooling, sampling, substrate and base plate separation is carried out, thus obtaining the connecting piece.
Referring to fig. 2, fig. 2 is a schematic diagram of a bonding process in an embodiment of the present invention, and it can be seen that the specific process is as follows: (1) firstly, carrying out surface treatment on an upper substrate and a lower substrate to form a convex and concave groove structure; (2) simply fixing the upper substrate and the lower substrate by adopting a substrate pair, and coating copper nano-soldering paste on the bonding surface of the lower substrate; (3) moving the substrates into a pressurizing and heating furnace, introducing reducing gas into the furnace, heating to a target temperature, and then starting pressurizing to realize the connection of the two substrates; (4) and finally, sampling and separating the substrate and the base plate to obtain the connecting piece.
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the scope of the claims. In the following examples and comparative examples, the copper nano-solder paste composition was as follows: about 92% of copper nano powder and about 8% of ethylene glycol.
Example 1
Two copper plates (20 mm in length, 5mm in width, 0.4mm in thickness) were used as upper and lower substrates, respectively, and subjected to laser processing to form projections (1 row by 36 rows of projections on the substrate surface, which are equally spaced, and a rectangular projection section of 0.4mm by 2.8mm, and a projection length of 0.3mm) on one surface of the upper substrate, and grooves (1 row by 36 rows of grooves on the substrate surface, which are equally spaced, and a rectangular groove section of 0.5mm by 3mm, and a groove depth of 0.4mm) on one surface of the lower substrate.
The upper and lower substrates were fixed on two identical alumina substrates (length 40 mm. times. width 30 mm. times. thickness 5mm), respectively, copper nano-solder paste was uniformly coated on the bonding surface of the lower substrate to a coating thickness of 1mm, and then placed in a heating and pressurizing furnace.
Introducing Pt-catalyzed formic acid gas (the flow rate is 38sccm), heating to 200 ℃, pressurizing to gradually embed the protrusions of the upper substrate into the grooves of the lower substrate, pressurizing to 30MPa, and maintaining the temperature and pressure for 50 minutes. And then naturally cooling, taking out, and separating the substrate to obtain the connecting piece.
Example 2
Two silicon plates (20 mm long, 5mm wide, 0.4mm thick) were used as upper and lower substrates, respectively, and were etched to form projections (1 row, 36 column, equal pitch distribution of projections on the substrate surface; 0.4mm, 2.8mm rectangular cross section of projections, 0.3mm length) on one surface of the upper substrate, and grooves (1 row, 36 column, equal pitch distribution of grooves on the substrate surface; 0.5mm, 3mm rectangular cross section of grooves, 0.4mm depth) on one surface of the lower substrate.
The upper and lower substrates were fixed to two identical silicon carbide substrates (40 mm in length by 30mm in width by 5mm in thickness), respectively, copper nano-solder paste was uniformly coated on the bonding surface of the lower substrate to a coating thickness of 1mm, and then placed in a heating and pressurizing furnace.
Starting to introduce Pt-catalyzed formic acid gas (the flow rate is 38sccm) and argon (the flow rate is 50sccm), heating to 220 ℃, starting to pressurize to gradually embed the protrusions of the upper substrate into the grooves of the lower substrate, pressurizing to 20MPa, and maintaining the temperature and pressure for 50 minutes. And then naturally cooling, taking out, and separating the substrate to obtain the connecting piece.
Example 3
Two gallium nitride plates (20 mm long × 5mm wide × 0.4mm thick) were used as upper and lower substrates, respectively, and laser processing was performed to form projections (1 row × 36 row of projections on the substrate surface, equi-spaced distribution; 0.4mm × 2.8mm rectangular cross section, 0.3mm projection length) on one surface of the upper substrate and grooves (1 row × 36 row of grooves on the substrate surface, equi-spaced distribution; 0.5mm × 3mm rectangular cross section, 0.4mm groove depth) on one surface of the lower substrate.
The upper and lower substrates were fixed on two identical silicon dioxide substrates (length 50mm x width 40mm x thickness 5mm) respectively, copper nano-solder paste was uniformly coated on the bonding surface of the lower substrate to a coating thickness of 1mm, and then placed in a heating and pressurizing furnace.
Starting to introduce Pt-catalyzed formic acid gas (the flow rate is 38sccm) and argon (the flow rate is 50sccm), heating to 240 ℃, starting to pressurize to gradually embed the protrusions of the upper substrate into the grooves of the lower substrate, pressurizing to 20MPa, and maintaining the temperature and pressure for 50 minutes. And then naturally cooling, taking out, and separating the substrate to obtain the connecting piece.
Examples 4 to 6
Example 4: the bonding process of example 1 was followed except that no reducing gas was introduced.
Example 5: the bonding process of example 2 was followed except that no reducing gas was introduced.
Example 6: the bonding process of example 3 was followed except that no reducing gas was introduced.
Comparative example 1
Two copper plates (20 mm in length, 5mm in width, and 0.4mm in thickness) were used as upper and lower substrates, and the bonding surfaces of the upper and lower substrates were subjected to mechanical polishing treatment.
The upper and lower substrates were fixed on two identical alumina substrates (length 40 mm. times. width 30 mm. times. thickness 5mm), respectively, copper nano-solder paste was uniformly coated on the bonding surface of the lower substrate to a coating thickness of 1mm, and then placed in a heating and pressurizing furnace.
Introducing Pt-catalyzed formic acid gas (the flow rate is 38sccm), heating to 200 ℃, pressurizing to gradually embed the protrusions of the upper substrate into the grooves of the lower substrate, pressurizing to 30MPa, and maintaining the temperature and pressure for 50 minutes. And then naturally cooling, taking out, and separating the substrate to obtain the connecting piece.
Example 7
The effect tests of examples 1-6 and comparative example 1 were carried out as follows: detecting the porosity of the copper nano soldering paste layer of the connecting piece through an ultrasonic scanning microscope; and testing the shear strength of the connecting piece according to the national standard GB/T8165-2008. The test results are shown in Table 1.
TABLE 1 test results of examples 1-6 and comparative example 1
| Porosity of the material | Shear strength, MPa | |
| Example 1 | 35％ | 40 |
| Example 2 | 47％ | 37.5 |
| Example 3 | 42％ | 39 |
| Example 4 | 62％ | 20.6 |
| Example 5 | 67％ | 18.4 |
| Example 6 | 63％ | 19 |
| Comparative example 1 | Having micron-scale defects | 15 |
From the test results, compared with the comparative example 1, the porosity of the product obtained in the examples 1 to 6 is obviously reduced, and the shear strength is obviously improved; the bonding method provided by the invention is proved to be capable of obviously reducing the interface defects and improving the shear strength of the connecting piece. In examples 1 to 6, the porosity of the product obtained in examples 1 to 3 was further reduced and the shear strength was further improved as compared with examples 4 to 6; the embedded bonding method provided by the invention is proved that the introduction of reducing gas is beneficial to further reducing the interface defects and improving the shear strength of the connecting piece.
The foregoing examples are provided to facilitate an understanding of the principles of the invention and their core concepts, including the best mode, and also to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any incorporated methods. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. The scope of the invention is defined by the claims and may include other embodiments that occur to those skilled in the art. Such other embodiments are intended to be within the scope of the claims if they have structural elements that approximate the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal languages of the claims.
Claims (3)
1. A bonding method, comprising the steps of:
a) processing the upper substrate to form a plurality of bulges on the bonding surface of the upper substrate; processing the lower substrate to form a plurality of grooves on the bonding surface of the lower substrate; the bulges and the grooves can be in one-to-one embedded correspondence, and the volume of the bulges is smaller than that of the grooves;
the length of the protrusion is 0.5-1 mm smaller than the depth of the groove;
the upper substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate;
the lower substrate comprises a gold plate, a silver plate, a copper plate, a silicon plate or a gallium nitride plate;
b) coating copper nano soldering paste on the bonding surface of the lower substrate, heating to a target temperature, then pressurizing, and performing heat preservation and pressure maintaining after reaching a target pressure to bond the upper substrate and the lower substrate to obtain a connecting piece;
substrates are respectively fixed on the non-bonding surface of the upper substrate and the non-bonding surface of the lower substrate, and the bonding of the upper substrate and the lower substrate is realized by pressurizing the substrates;
the pressurizing pressure is 20-30 MPa;
the bonding temperature is 200-280 ℃;
the time for heat preservation and pressure maintaining is 30-100 min;
the bonding is carried out in a reducing gas environment;
the reducing gas comprises formic acid gas, or comprises formic acid gas and inert gas;
the formic acid gas is catalyzed by a Pt sheet at the temperature of 140-160 ℃;
the flow rate of the formic acid gas is 30-40 sccm; the flow rate of the inert gas is 40-60 sccm;
the substrate is a substrate with Young modulus less than or equal to 410GPa and is selected from an aluminum oxide plate, a silicon carbide plate or a silicon dioxide plate;
the thickness of the substrate is 200-1000 mu m;
in the copper nano-soldering paste, the particle size of copper nano-particles is 50-800 nm.
2. The bonding method of claim 1, wherein the cross-sectional shape of the protrusion comprises a square, rectangle, semicircle, triangle, or trapezoid; the cross-sectional shape of the groove comprises a square shape, a rectangular shape, a semicircular shape, a triangular shape or a trapezoidal shape.
3. The bonding method according to claim 1 or 2, wherein the protrusion is a uniform cross-section protrusion or a non-uniform cross-section protrusion; the groove is a uniform section groove or a non-uniform section groove;
the non-uniform cross-section protrusions comprise hemispherical protrusions; the non-uniform cross-section groove comprises a hemispherical groove.
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| CN105374741A (en) * | 2014-08-30 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Wafer bonding method and bonding component of wafer |
| CN107267938A (en) * | 2017-05-16 | 2017-10-20 | 上海理工大学 | A kind of novel oxidation-resistant Nanometer Copper soldering paste and its preparation method and application |
| CN109317859A (en) * | 2018-11-05 | 2019-02-12 | 复旦大学 | Nanometer Copper soldering paste, preparation method and copper-copper bonding method |
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| CN102874739A (en) * | 2012-10-10 | 2013-01-16 | 中国科学院上海微系统与信息技术研究所 | Self-locking wafer bonding structure and manufacturing method thereof |
| CN104157605A (en) * | 2014-08-23 | 2014-11-19 | 中国电子科技集团公司第五十八研究所 | Salient point interconnection welding method |
| CN105374741A (en) * | 2014-08-30 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Wafer bonding method and bonding component of wafer |
| CN107267938A (en) * | 2017-05-16 | 2017-10-20 | 上海理工大学 | A kind of novel oxidation-resistant Nanometer Copper soldering paste and its preparation method and application |
| CN109317859A (en) * | 2018-11-05 | 2019-02-12 | 复旦大学 | Nanometer Copper soldering paste, preparation method and copper-copper bonding method |
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