CN105368060B - Organosilicon fever layer material, infrared radiation heating body and preparation method thereof - Google Patents
Organosilicon fever layer material, infrared radiation heating body and preparation method thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/006—Additives being defined by their surface area
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
Abstract
The invention discloses a kind of organosilicon fever layer materials, infrared radiation heating body and preparation method thereof.The organosilicon fever layer material includes infrared emission conductive material and/or infrared emission insulating materials.The infrared emission conductive material includes organic siliconresin, fumed silica, half reinforced filling, dispersing agent, silicone sealants, graphene, carbon fiber, crosslinking agent, inhibitor and catalyst etc..The infrared emission insulating materials includes organic siliconresin, fumed silica, silicone sealants, nano-titanium dioxide, boron nitride, crosslinking agent, inhibitor and catalyst etc..Infrared radiating body infrared radiation efficiency provided by the invention is high, heating effect is good, security performance is high, in especially 3 μm~8 μm of wavelength band, its infrared emittance is 95% or so, and after connecting low-tension supply, the warming heating effect of winter room temperature can be improved, the preparation method of the infrared radiating body is simple simultaneously, is suitable for industrialized production.
Description
Technical field
Present invention relates particularly to a kind of preparation of organosilicon fever layer material and based on the infrared spoke of the fever layer material
Penetrate calandria and preparation method thereof.
Background technique
With industrial fast development, energy problem more and more becomes the conspicuous contradiction of puzzlement socio-economic development.
People more and more pay close attention to the consumption problem of the energy, energy-saving, energy conservation and environmental protection, Energy Efficiency Ratio etc. while emphasizing to increase productivity
Have become social hotspots vocabulary.
The research of China's infrared radiation coating is mainly with the functional filler compounded technology of infrared radiation coating and energy conservation
Based on effect.Divide from binder, the first kind is the coating with thermal radiation function using inorganic matter as binder.Specially such as China
Sharp CN200710113479 enhances adapted metal oxide, graphite, hard charcoal using potassium water glass as matrix binder, by cellulose
Black wait is heat radiation filler, and preparation is for the infrared radiation coating on far-infrared heater.Chinese patent CN02827722.8 with
Clay is binder, is functional stuffing using ilmenite, prepares the heat emissivity coefficient of coating between 0.85~0.95, be applied to
In 1000 DEG C or the industrial furnace of higher temperature.Chinese patent CN200710118441.1 is bonding with inorganic matter cooperation cellucotton
Agent, using silicon carbide, metal oxide as thermal radiation function filler, the coating of preparation emissivity with higher, to mention
The utilization rate of high fever reaches energy-efficient effect.Second class is the coating with thermal radiation function using organic matter as binder.Such as
Chinese patent CN200710059888.6 utilizes silicon dioxide powder, infra red radiation function additive, silicon using organic emulsion as base-material
Hydrochlorate composite granule, natural minerals powder are functional stuffing, are prepared for infrared with high efficient radiation function under cryogenic
Radiation paint.Chinese patent CN 200910114432.4 using high molecular material as film forming matter, using dedicated far infrared pigment with
Metal oxide is functional stuffing, is prepared for the coating with heat reflection and thermal radiation function.But these infra-red radiations above-mentioned
Composition disadvantage is that weatherability is poor, and coating is easy chap, and infra-red radiation emissivity is low.
Summary of the invention
The main purpose of the present invention is to provide a kind of organosilicon fever layer material, based on the infrared spoke of the fever layer material
Penetrate calandria and preparation method thereof.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
A kind of organosilicon fever layer material comprising infrared emission conductive material and/or infrared emission insulating materials；
Wherein, the infrared emission conductive material includes following component in parts by weight: organic siliconresin 100
Part, 3~5 parts of fumed silica, half 5~8 parts of reinforced filling, 2~5 parts of dispersing agent, 2~5 parts of silicone sealants, first
40~55 parts of conductive and heat-conductive exothermic material, the second 20~35 parts of conductive and heat-conductive exothermic material, 1~2 part of crosslinking agent, inhibitor 0.1
~0.3 part, 0.1~0.5 part of catalyst；
The infrared emission insulating materials includes following component in parts by weight: 100 parts of organic siliconresin, gas phase
5~8 parts of method silica, 2~5 parts of silicone sealants, 5~15 parts of nano-titanium dioxide, 55~75 parts of boron nitride, crosslinking agent
1~2 part, 0.1~0.3 part of inhibitor, 0.1~0.5 part of catalyst.
Further, the general formula of the organic siliconresin is (RnSiO4-n/2)m, R is organic group, the organic group packet
Including Me, Ph, Vi or Et, n is the organic group number connected on silicon atom, and n is selected from 1,2 or 3, and m is the degree of polymerization, and m >=5,
The mass percentage of its medium vinyl is 0.03%~3%, and the average molecular weight of the organic siliconresin is 500~1000.
Further, the specific surface area of the silica is 150m2/g。
Further, half reinforced filling includes the precipitated calcium carbonate that average grain diameter is 20nm.
Further, the dispersing agent includes the polyether silicone oil of long chain type.
Further, the silicone adhesives include the gamma-aminopropyl-triethoxy-silane that mass ratio is 1:2~1:1
With γ-glycidyl ether oxygen propyl trimethoxy silicane.
Further, the first conductive and heat-conductive exothermic material, which is selected from, passes through γ-glycidyl ether oxygen propyl trimethoxy
The carbon fiber of silane-modified processing, the first conductive and heat-conductive exothermic material, which is selected from, passes through γ-glycidyl ether oxygen propyl front three
The graphene of oxysilane modification.
Further, the mass ratio of the first conductive and heat-conductive exothermic material and the second conductive and heat-conductive exothermic material is 0.5
~1.2.
Further, the nano-titanium dioxide and nm-class boron nitride, which are selected from, passes through γ-glycidyl ether oxygen propyl front three
The nano-titanium dioxide and nm-class boron nitride of oxysilane modification.
Further, the partial size of the nano-titanium dioxide is 30nm~50nm, and crystal structure is rutile-type.
Further, the nm-class boron nitride is selected from the hexagonal boron nitride that partial size is 20nm~30nm.Further, described
The general formula of crosslinking agent is (HnSiO4-n/2)m, and the low hydrogeneous straight-chain siloxanes for being 0.01~0.02mol% selected from hydrogen content.
Further, the inhibitor includes ethynylcyclohexanol.
Further, the catalyst includes platinum catalyst, and the platinum catalyst includes platinum dioxide, chloroplatinic acid or platinum
Complex compound.
A kind of organosilicon fever layer material comprising the infrared hair formed by the infrared emission conductive material heat cure
The infrared emission insulating layer penetrating conductive layer and/or being formed by the infrared emission insulating materials heat cure.
Further, organosilicon fever layer material includes the infrared emission conductive layer being stacked and infrared emission
Insulating layer.
A kind of infrared radiation heating body comprising: any organosilicon fever layer material above-mentioned；And have with described
The conductive network that infrared emission conductive layer in machine silicon fever layer material is electrically connected, the conductive network are electrically connected with low-tension supply
It connects.
Further, the infrared radiation heating body include: along direction initialization successively fold set infrared emission insulating layer,
Infrared emission conductive layer, conductive mesh network layers and infrared reflecting layer, the infrared emission conductive layer are formed directly into the conductive mesh
In network layers, and the infrared emission insulating layer is directly covered on the infrared emission conductive layer.
Further, the infrared emission conductive layer with a thickness of 0.2mm~0.5mm.
Further, the infrared emission insulating layer with a thickness of 0.2mm~0.5mm.
Further, the conductive mesh network layers are adhesively fixed with infrared reflecting layer.
Further, the conductive mesh network layers use nickel plating conduction grenadine.
A kind of preparation method of infrared radiation heating body, the infrared radiation heating body are any infrared emission above-mentioned
Conductive layer, and the preparation method includes the following steps:
(1) by carbon fiber powder, graphite powder, γ-glycidyl ether oxygen propyl trimethoxy silicane and deionized water 50~
30~40min is stirred in 55 DEG C of degreasing fluids, is then rinsed with deionized water to neutrality, after suction filtration, is placed in 180~200 DEG C infrared
2h is dried in radiant drying, later by after drying process carbon fiber and graphene be placed in planetary ball mill with
Revolving speed milled processed 2h~2.5h of 1800r/min, thereafter by after smashing and grinding graphene and carbon fiber composite powder be placed in 100
It is dried 1h in DEG C vacuum oven, completes the surface treatment of carbon fiber and graphene；
(2) carbon fiber and graphene and organic siliconresin, filler, polyether silicone oil and organosilicon obtained step (1)
Bonding agent, which is added in polymeric kettle, carries out preliminary mixing 30min；
(3) step (2) obtained material being added in grinder by pump and being ground to fineness is 5um；
(4) crosslinking agent, inhibitor are added in step (3) obtained material, after being sufficiently mixed uniformly, add catalyst
And it is stirred until homogeneous, filtering, de-bubble later.
Mainly using organosilicon macromolecule material as film forming matter and adhesive, fumed silica is used as to disappear the present invention
Photo etching, precipitated calcium carbonate are compounded as half reinforced filling using carbon fiber as low pressure conductive and heat-conductive exothermic material with graphene
Enhance conductive and heat-conductive heating efficiency and is prepared for the composite material of high IR emissivity according to certain proportion.These fillers can make
Macroscopical bright and clean and microcosmic wavy irradiation structure unit is presented after coating film forming, such construction can greatly increase heat dissipation
Area and conductivity are obviously improved the effect of heat exchange, improve object infrared radiation coefficient, and maintain corresponding thermostabilization
The excellent properties such as property, heat resistance, high intensity, corrosion resistance, wearability.After tested, infrared emittance is average 90% for the material
More than, especially in the wavelength band of 3um-8um, infrared emittance is 95% or more.
A kind of preparation method of infrared radiation heating body, the infrared radiation heating body are any infrared emission above-mentioned
Insulating layer, and the preparation method includes the following steps:
I, by nano-titanium dioxide, nm-class boron nitride and γ-glycidyl ether oxygen propyl trimethoxy silicane and deionization
Water stirs 30~40min in 50~55 DEG C of degreasing fluids, is then rinsed with deionized water to neutrality, after suction filtration, it is placed in 180~
Be dried 2h in 200 DEG C of infrared radiation dryings, later by after drying process nano-titanium dioxide and nm-class boron nitride set
With revolving speed milled processed 2h~2.5h of 1800r/min in planetary ball mill, thereafter by the nano-silica after smashing and grinding
Change titanium and nm-class boron nitride is placed in 100 DEG C of vacuum ovens again and is dried 1h, completes to nano-titanium dioxide and nanometer nitrogen
Change the surface treatment of boron；
II, the nano-titanium dioxide and nm-class boron nitride and organic siliconresin that are obtained step I, filler, polyether silicone oil with
And silicone adhesives are added in polymeric kettle and carry out preliminary mixing 30min；
III, the obtained material of step II being added in milling apparatus by pump and being ground to fineness is 5~10nm；
IV, by crosslinking agent, inhibitor is added in the obtained material of step III, is sufficiently mixed uniformly, is added catalyst and stir
It mixes to uniform, filtering, de-bubble later.
The present invention using organosilicon macromolecule material as film forming matter and adhesive, fumed silica as reinforcing agent,
Using rutile type nano titanic oxide as insulation exothermic material, it is equipped with nano-hexagonal boron nitride reinforced insulation heating efficiency,
According to certain proportion, it is prepared for the infrared emission insulating materials of excellent insulation performance.A small amount of nano-titanium dioxide is equipped with greatly
The hexagonal boron nitride of amount not only assigns the good electrical insulation capability of material, while material can be made to keep very high thermal coefficient, phase
The performances such as thermal stability, heat resistance, high intensity, corrosion resistance, the wearability answered also compare have it is different.
After tested, dielectric constant can achieve 15kV/mm or more to the material, and thermal coefficient can achieve 2.2W (mK)-1, fully meet the performance requirement of infrared emission insulating layer.
Compared with prior art, the invention has the advantages that
(1) the infrared radiation heating body (referred to as " infrared radiating body ") provided is with the low reflection characteristic under visible light conditions
With the high emission characteristic under the conditions of infrared light, outermost layer can design different types of wallpaper according to different user demands,
It is decorated suitable for inner wall of building, energy-saving, energy conservation and environmental protection, Energy Efficiency Ratio are high.
(2) the infra-red radiation preparation process provided is simple, is suitable for industrialized production, and good weatherability, more conventional
The high 200%-300% of infrared emitter material lifetime, ibid infra-red radiation emissivity is high, and heating effect is good, and security performance is high, especially
It is in the wavelength band of 3um-8um, and infrared emittance is 95% or so.More conventional infrared radiating body, infrared emittance
Increase 10%-15%.
(3) the warming confession of winter room temperature can be improved after being electrically connected with low-tension supply in the infrared radiating body provided
Warm effect.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of infrared radiation heater part in one embodiment of the invention.
Specific embodiment
Below in conjunction with several embodiments, further description of the technical solution of the present invention.
Please referring to table 1 is four kinds of infrared emission conductive materials and infrared emission prepared by 1- of embodiment of the present invention embodiment 4
Insulating materials sample.
Table 1
Relevant infrared average emitted rate is carried out to infrared emission conductive above-mentioned to test, and passes through Fourier
The additional integrating sphere accessory of transform infrared spectroscopy instrument is measured, and in 3-5um, 5-8um, the spectral reflectance value of 8-14um wave band is used
The spectral reflectance value surveyed according to planck formula calculate the total emissivity of institute's sample at room temperature with it is synthermal under it is black
The ratio between emissivity of body can obtain the infrared average emitted rate of the composite material.Table 2 is corresponding case study on implementation different red
The infrared average emitted rate obtained in outside line wave band.
Table 2
| Sample | 3-5um | 5-8um | 8-14um | 14-20um |
| Embodiment 1 | 0.9356 | 0.9432 | 0.8823 | 0.8356 |
| Embodiment 2 | 0.9478 | 0.9498 | 0.8932 | 0.8532 |
| Embodiment 3 | 0.9498 | 0.9524 | 0.8948 | 0.8587 |
| Embodiment 4 | 0.9533 | 0.9553 | 0.9065 | 0.8656 |
In conclusion aforementioned infrared radiating body provided by the invention, is in Thermal infrared bands 3-8um wave band average emitted rate
0.94, average emitted rate is higher, and more conventional infrared emitter average emitted rate is higher by 10%-15%, and this hair
Bright preparation process simple possible, can be realized industrialized production.
By carrying out relevant test to infrared emission insulated sample above-mentioned, the test data of table 3 is obtained.
Table 3
| Sample | Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 |
| Thermal coefficient W (mK)-1 | 0.9 | 1.2 | 1.8 | 2.2 |
| Dielectric strength (kV/mm) | ≥15 | ≥15 | ≥15 | ≥15 |
| Tensile strength (MPa) | ≥2 | ≥2 | ≥2 | ≥2 |
| Elongation (%) | ≥80 | ≥80 | ≥80 | ≥80 |
| Linear shrinkage ratio (%) | ≤0.3 | ≤0.3 | ≤0.3 | ≤0.3 |
It is analyzed as data it is known that according to sample made from embodiment, thermal coefficient can achieve 2.2W
(m·K)-1, dielectric strength meets the performance requirement of infrared emission insulating layer in 15kV/mm or more.
Following methods preparation can be used in infrared emission conductive layer above-mentioned:
A. carbon fiber and graphene surface are handled, the surface treatment are as follows: take appropriate carbon fiber powder, graphite powder and
γ-glycidyl ether oxygen propyl trimethoxy silicane and suitable deionized water, the electromagnetic agitation 30 in 50~55 DEG C of degreasing fluids
Then~40min is rinsed with deionized water to neutrality, after suction filtration, be placed in 180~200 DEG C of infrared radiation dryings at dry
Manage 2h；The carbon fiber being dried and graphene are placed in planetary ball mill and ground with the revolving speed of 1800r/min
Mill processing 2h-2.5h；By after above-mentioned smashing and grinding graphene and carbon fiber composite powder be placed in again in 100 DEG C of vacuum ovens do
Dry processing 1h.
B. the organic siliconresin in formula, filler, polyether silicone oil, carbon fiber and graphene and silicone adhesives are added
Enter in polymeric kettle, carries out preliminary mixing 30min；
C. material is added in three-roll grinder by pump, being ground to fineness is 5um.
D. by crosslinking agent, inhibitor is added in ground material, is sufficiently mixed uniformly, then catalyst is added to object
In material, it is stirred until homogeneous.
E. discharging filtering, de-bubble, packaging.
Following methods preparation can be used in infrared emission insulating layer above-mentioned:
A. nano-titanium dioxide and nm-class boron nitride are surface-treated, the surface treatment are as follows: take proper amount of nano titanium dioxide
Titanium and nm-class boron nitride and γ-glycidyl ether oxygen propyl trimethoxy silicane and suitable deionized water, at 50~55 DEG C
Then 30~40min of electromagnetic agitation in degreasing fluid is rinsed with deionized water to neutrality, after suction filtration, be placed in 180~200 DEG C infrared
2h is dried in radiant drying；The nano-titanium dioxide being dried and nm-class boron nitride are placed in planetary
With the revolving speed milled processed 2h-2.5h of 1800r/min in ball mill；By the nano-titanium dioxide and nanometer after above-mentioned smashing and grinding
Boron nitride, which is placed in again in 100 DEG C of vacuum ovens, is dried 1h.
B. by the organic siliconresin in formula, filler, polyether silicone oil, nano-titanium dioxide and nm-class boron nitride and organic
Silicon bonding agent is added in polymeric kettle, carries out preliminary mixing 30min；
C. material is added in three-roll grinder by pump, being ground to fineness is 5-10nm.
D. by crosslinking agent, inhibitor is added in ground material, is sufficiently mixed uniformly, then catalyst is added to object
In material, it is stirred until homogeneous.
E. discharging filtering, de-bubble, packaging.
Wherein, organic siliconresin, fumed silica, half reinforced filling, dispersing agent, silicone adhesives, carbon fiber,
Graphene, nano-titanium dioxide, nm-class boron nitride, crosslinking agent, inhibitor, catalyst etc. can be selected from previously recited any
Respective substance, details are not described herein again.
A kind of infrared radiation heater part can be prepared using aforementioned infrared emission conductive layer and infrared emission insulating layer, is asked
Refering to fig. 1, can include: infrared emission conductive layer 1, thickness can be designed in 0.2mm-0.5mm；Infrared emission insulating layer 2 is thick
Degree can be designed in 0.2mm-0.5mm；Infrared reflecting layer 3；Nickel plating conduction grenadine 4；Low-tension supply 5.
Wherein, nickel plating conduction grenadine can be adhered on infrared reflecting layer 3, and nickel plating conduction grenadine and low-tension supply 5 are connected.
Wherein, infrared emission conductive layer 1 can be and is coated on nickel plating conduction grenadine by way of blade coating or roller coating
Above, by heat cure shaping.Later, it on infrared emission conductive layer 1, can be coated by way of blade coating or roller coating infrared
Emit insulating layer 2.
The infrared radiation heater part preparation process simple possible, can be realized industrialized production.The infra-red radiation is added
Thermal device is followed closely in the interior walls of building, and upper low-tension supply is led to, and the warming heating effect of winter room temperature can be improved
Fruit.
Description of the invention and application be it is illustrative, it is not intended to limit the scope of the present invention to the above embodiment,
For those skilled in the art, without departing from the principle of the present invention, several change can also be made
Into these improvement also should be regarded as protection scope of the present invention.Therefore, present invention is not limited by this embodiment, any use etc.
The technical solution that effect replacement obtains is within the protection scope of the present invention.
Claims (5)
1. a kind of infrared radiation heating body, characterized by comprising: organosilicon fever layer material；The organosilicon fever layer material
The infrared emission conductive layer formed including infrared emission conductive material heat cure and the infrared emission insulating materials heat cure
The infrared emission insulating layer of formation, and, it is electrically connected with the infrared emission conductive layer in organosilicon fever layer material
Conductive network, the conductive network are electrically connected with low-tension supply；The infrared emission insulating layer, infrared set is successively folded along direction initialization
Transmitting conductive layer, conductive mesh network layers and infrared reflecting layer, the infrared emission conductive layer are formed directly into the conductive mesh network layers
On, and the infrared emission insulating layer is directly covered on the infrared emission conductive layer；
Wherein, the infrared emission conductive material includes following component in parts by weight: 100 parts of organic siliconresin, gas
3~5 parts of phase method silica, half 5~8 parts of reinforced filling, 2~5 parts of dispersing agent, 2~5 parts of silicone sealants, first is conductive
40~55 parts of thermally conductive exothermic material, the second 20~35 parts of conductive and heat-conductive exothermic material, 1~2 part of crosslinking agent, inhibitor 0.1~0.3
Part, 0.1~0.5 part of catalyst；
The infrared emission insulating materials includes following component in parts by weight: 100 parts of organic siliconresin, vapor phase method two
5~8 parts of silica, 2~5 parts of silicone sealants, 5~15 parts of nano-titanium dioxide, 55~75 parts of nm-class boron nitride, crosslinking agent
1~2 part, 0.1~0.3 part of inhibitor, 0.1~0.5 part of catalyst；
The general formula of the organic siliconresin is (RnSiO4-n/2)M, R are organic group, the organic group include Me, Ph, Vi or
Et, n are the organic group number that connects on silicon atom, and n is selected from 1,2 or 3, and m is the degree of polymerization, and m >=5, medium vinyl
Mass percentage is 0.03%~3%, and the average molecular weight of the organic siliconresin is 500~1000；
The specific surface area of the silica is 150m2/g；
Half reinforced filling includes the precipitated calcium carbonate that average grain diameter is 20nm；
The dispersing agent includes the polyether silicone oil of long chain type；
The silicone sealants include the gamma-aminopropyl-triethoxy-silane and γ-glycidol that mass ratio is 1:2~1:1
Ether oxygen propyl trimethoxy silicane；
The first conductive and heat-conductive exothermic material, which is selected from, passes through γ-glycidyl ether oxygen propyl trimethoxy silicane modification
Carbon fiber, the second conductive and heat-conductive exothermic material by γ-glycidyl ether oxygen propyl trimethoxy silicane at being modified
The graphene of reason, and the mass ratio of the first conductive and heat-conductive exothermic material and the second conductive and heat-conductive exothermic material be 0.5~
1.2；
The nano-titanium dioxide and nm-class boron nitride by γ-glycidyl ether oxygen propyl trimethoxy silicane at being modified
The nano-titanium dioxide and nm-class boron nitride of reason, wherein the partial size of the nano-titanium dioxide is 30nm~50nm, crystal structure
For rutile-type, the nm-class boron nitride is selected from the hexagonal boron nitride that partial size is 20nm~30nm；
The general formula of the crosslinking agent is (HnSiO4-n/2) m, and the low hydrogeneous straight-chain for being 0.01~0.02mol% selected from hydrogen content
Siloxanes；
The inhibitor includes ethynylcyclohexanol；
The catalyst includes platinum catalyst, and the platinum catalyst includes the complex compound of platinum dioxide, chloroplatinic acid or platinum.
2. infrared radiation heating body according to claim 1, it is characterised in that: the infrared emission conductive layer with a thickness of
0.2mm~0.5mm；And/or the infrared emission insulating layer with a thickness of 0.2mm~0.5mm.
3. infrared radiation heating body according to claim 1, it is characterised in that: the conductive mesh network layers and infrared reflecting layer
It is adhesively fixed.
4. infrared radiation heating body according to claim 2 or 3, it is characterised in that: the conductive mesh network layers use nickel plating
Conductive grenadine.
5. a kind of preparation method of infrared radiation heating body according to claim 1, it is characterised in that the infrared emission is led
The preparation method of electric layer includes the following steps:
(1) by carbon fiber powder, graphene, γ-glycidyl ether oxygen propyl trimethoxy silicane and deionized water at 50~55 DEG C
30~40min is stirred in degreasing fluid, is then rinsed with deionized water to neutrality, after suction filtration, is placed in 180~200 DEG C of infra-red radiations
2h is dried in drying property, later by after drying process carbon fiber and graphene be placed in planetary ball mill with 1800r/
Revolving speed milled processed 2h~2.5h of min, thereafter by after smashing and grinding graphene and carbon fiber composite powder be placed in 100 DEG C of vacuum
It is dried 1h in drying box, completes the surface treatment of carbon fiber and graphene；
(2) carbon fiber and graphene and organic siliconresin obtained step (1), filler, polyether silicone oil and organosilicon bonding
Agent, which is added in polymeric kettle, carries out preliminary mixing 30min；
(3) step (2) obtained material being added in grinder by pump and being ground to fineness is 5um；
(4) crosslinking agent, inhibitor are added in step (3) obtained material, after being sufficiently mixed uniformly, add catalyst and stir
It mixes to uniform, filtering, de-bubble later.
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