CN105356435A - Bidirectional-breaking bridge-type circuit breaker and application method thereof - Google Patents
Bidirectional-breaking bridge-type circuit breaker and application method thereof Download PDFInfo
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- CN105356435A CN105356435A CN201510916224.1A CN201510916224A CN105356435A CN 105356435 A CN105356435 A CN 105356435A CN 201510916224 A CN201510916224 A CN 201510916224A CN 105356435 A CN105356435 A CN 105356435A
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- power semiconductor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
Abstract
The invention discloses a bidirectional-breaking bridge-type circuit breaker and an application method thereof. The circuit breaker comprises a main current circuit, a transfer current circuit, an overvoltage limiting circuit, a firs access end (S1), and a second access end (S2). A first branch circuit of the transfer current circuit formed by the series connection of a first power semiconductor device (A1) and a fourth power semiconductor device (A4) is in parallel connection with the main current circuit. A second branch circuit of the transfer current circuit formed by the series connection of a second power semiconductor device (A2) and a third power semiconductor device (A3) is in parallel connection with the main current circuit. A power semiconductor device (A0) is a bidirectional-connection power semiconductor device, and the first, second, third, fourth and fifth power semiconductor devices (A1, A2, A3, A4 and A5) are all unidirectional-connection power semiconductor devices. The power semiconductor device (A0) and the fifth power semiconductor device (A5) can cut off the current.
Description
Technical field
The present invention relates to a kind of bridge-cut-off device of two-way disjunction, particularly relate to a kind of bridge-cut-off device of the two-way disjunction with transfer current circuit.
Background technology
The hybrid circuit breaker be made up of high speed machine switch and large power semiconductor device has the advantages such as discharge capacity is large, turn-off speed is fast, current limiting capacity is strong, has become the study hotspot that hicap cut-offs field.The reverse pulse current that typical zero current type structure hybrid circuit breaker utilizes the recharged capacitance electric discharge be connected in transfer current circuit to produce to resist the electric current in high speed machine switch, and then creates a current zero-crossing point in high speed machine switch.This structure is simple, reliable, but cut-off recharged capacitance voltage after terminating and equal system voltage, higher system voltage must can be born to the charhing unit of capacitor charging, add the manufacturing cost of charhing unit, difficulty and volume, become one of reason limiting this kind of hybrid circuit breaker popularization.
Patent documentation CN103346531 discloses a kind of hybrid circuit breaker of two-way disjunction, described circuit breaker comprises main current circuit, transfer current circuit, overvoltage Limiting circuit, control system, and the incoming end S1 of system and incoming end S2, and main current circuit, transfer current circuit and overvoltage Limiting circuit in parallel
(1) described main current circuit is composed in series by high speed machine switch and power semiconductor A0, wherein:
Described incoming end S1 connects one end of described high speed machine switch, to realize the connection of described incoming end S1 and described main current circuit one end; The other end of described high speed machine switch is connected with one end of described power semiconductor A0; The other end of described power semiconductor A0 then connects described incoming end S2, to realize the connection of the other end of described incoming end S2 and described main current circuit;
(2) described transfer current circuit comprises the circuit 1 that power semiconductor A1 forms, the circuit 2 that inductance L _ 0 and power semiconductor A2 are composed in series, the circuit 3 that inductance L _ 1 and power semiconductor A3 are composed in series, the circuit 4 that power semiconductor A4 forms and one is filled with the pre-charge capacitor C of certain voltage in advance, and described circuit 1 is connected with described circuit 4,2, described circuit is connected with described circuit 3
(A) described circuit 1 and described circuit 4 are composed in series transfer current circuit branch 14, and described branch road 14 is in parallel with described main current circuit, and: described incoming end S1 connects one end of described power semiconductor A1, to realize the connection with one end of described branch road 14; The other end of described power semiconductor A1 is then connected with one end of described power semiconductor A4 to realize the series connection of described circuit 1 and described circuit 4; The other end of described power semiconductor A4 is then connected with described incoming end S2, to realize the other end of described branch road 14 and the connection of described incoming end S2, thus realizes the in parallel of described branch road 14 and described main current circuit;
(B) described circuit 2 and described circuit 3 are composed in series transfer current circuit branch 23, and described branch road 23 is in parallel with described main current circuit, and: described incoming end S1 connects one end of described inductance L _ 0, to realize the connection with one end of described branch road 23, the other end of described inductance L _ 0 then connects one end of described power semiconductor A2, the other end of described power semiconductor A2 then connects one end of described inductance L _ 1, to realize connecting of described circuit 2 and described circuit 3, the other end of described inductance L _ 1 is then connected with one end of described power semiconductor A3, the other end of described power semiconductor A3 is then connected with described incoming end S2, to realize the other end of described branch road 23 and the connection of described incoming end S2, thus realizes the in parallel of described branch road 23 and described main current circuit, (C) end points between described circuit 1 and described circuit 4, and the end points between described circuit 2 and described circuit 3, then connect described pre-charge capacitor C between these two end points, (D) all power semiconductors are the power semiconductor of two-way admittance, (3) described control system measurement flows through the electric current of described incoming end S1 or S2, flow through the electric current of described main current circuit, flow through the electric current of circuit 1 and circuit 4 described in described transfer current circuit, flow through the electric current of described overvoltage Limiting circuit, the voltage of the switch ends of described high speed machine switch and the switch displacement of described high speed machine switch, when system power direction is from S1 to S2, power semiconductor A1 to the A4 action in described high speed machine switch and transfer current circuit is controlled by the current amplitude and rate of change measuring circuit 1 in the current amplitude of described main current circuit and rate of change and described transfer current circuit, when system power direction is from S2 to S1, power semiconductor A1 to the A4 action in described high speed machine switch and transfer current circuit is controlled by the current amplitude and rate of change measuring circuit 4 in the current amplitude of described main current circuit and rate of change and described transfer current circuit.
This patent can the overvoltage climbing speed at limiting circuit breaker two ends, and because capacitance current in interrupting process have passed through twice transfer, the voltage direction that circuit breaker has cut-off on rear recharged capacitance is consistent with the pre-charge voltage direction before action, eliminate the charging process of electric capacity, hybrid circuit breaker has two-way admittance and breaking function.But the performance volume requirement of this patent to recharged capacitance is higher, and be unfavorable for circuit breaker cut-off reliability; High speed machine switch is the easy starting the arc in whole process, reduces reliability and the fail safe of circuit breaker; The circuit of this patent and power semiconductor also often make the reaction time of circuit breaker longer, reduce sensitivity and the reliability of circuit breaker, and improve the cost of circuit breaker.
Disclosed above-mentioned information is only for strengthening the understanding to background of the present invention in the background section, therefore may comprise the information not being formed in prior art known to a person of ordinary skill in the art in this country.
Summary of the invention
The deficiency existed for above-mentioned prior art or defect, the object of the present invention is to provide a kind of bridge-cut-off device that can complete the two-way disjunction of quick breaking current.By using the transfer current circuit not comprising electric capacity and inductor, the high request to electric capacity avoiding electric capacity precharge and cause due to the electric pressure reason of charhing unit, transfer current circuit of the present invention uses bridge architecture, only unidirectionally have with one group and just can realize to electric current two-way disjunction by turn-off capacity power semiconductor, effectively can reduce breaker control complexity and manufacturing cost and improve the reliability of circuit breaker; Due to unidirectional power semiconductor device series connection conduction voltage drop, voltage is lower, and making process there will not be electric arc, makes high speed machine switch separating brake to produce electric arc; It is faster that circuit breaker of the present invention uses the hybrid DC circuit breaker with the power semiconductor breaking current of full control function to have breaking speed than prior art, be more conducive to the advantage of disjunction rated current, the reaction time of circuit breaker of the present invention is short, improves sensitivity and the reliability of circuit breaker.
The object of the invention is to be achieved by the following technical programs.
According to a first aspect of the invention, a kind of bridge-cut-off device of two-way disjunction comprises main current circuit, transfer current circuit, overvoltage Limiting circuit and the first incoming end and the second incoming end, described main current circuit, transfer current circuit and overvoltage Limiting circuit in parallel, described main current circuit is composed in series by high speed machine switch and power semiconductor, wherein, described first incoming end connects one end of high speed machine switch, the other end of described high speed machine switch connects one end of power semiconductor, the other end of described power semiconductor connects described second incoming end.
Described transfer current circuit comprises the first power semiconductor, the second power semiconductor, the 3rd power semiconductor, the 4th power semiconductor and the 5th power semiconductor composition.
Described first power semiconductor transfer current circuit first branch road formed of connecting with the 4th power semiconductor is in parallel with described main current circuit, wherein, described first incoming end connects one end of described first power semiconductor, the other end of described first power semiconductor is connected with one end of power semiconductor described in the 4th, and the other end of described 4th power semiconductor is connected with described second incoming end.
Described second power semiconductor transfer current circuit second branch road formed of connecting with described 3rd power semiconductor is in parallel with described main current circuit, wherein, described first incoming end connects one end of described second power semiconductor, the other end of described second power semiconductor is connected with one end of described 3rd power semiconductor, and the other end of described 3rd power semiconductor is connected with described second incoming end.
The first end points between described first power semiconductor and described 4th power semiconductor connects can one end of the 5th power semiconductor of cut-off current, and the other end of described 5th power semiconductor connects the second end points between described second power semiconductor and described 3rd power semiconductor.
Described power semiconductor is the power semiconductor of two-way admittance, first, second, third, fourth and fifth power semiconductor is the power semiconductor of one-way conduction, and wherein said power semiconductor and described 5th power semiconductor can cut-off currents.
Preferably, when the bridge-cut-off device of described two-way disjunction needs to cut-off, described high speed machine switch separating brake in described main current circuit, then determines described first, second, third, fourth and fifth power semiconductor in described power semiconductor and described main current circuit whether action and corresponding action sequence by measuring the current amplitude of described main current circuit and rate of change.
Preferably, described overvoltage Limiting circuit comprises or any number of combinations in the lightning arrester of piezo-resistance, zinc oxide valve plate composition.
Preferably, described first, second, third, fourth and the 5th power semiconductor be any one or multiple combinations in IGBT, GTO.
Preferably, described first, second, third and fourth power semiconductor be uncontrollable half control type power semiconductor or its combination.
Preferably, described high speed machine switch is based on the high speed machine switch of electromagnetic repulsion force, based on the mechanical switch of high-speed electric expreess locomotive driving or the high speed machine switch based on explosion driving.
Preferably, one or more in described first, second, third, fourth and fifth power semiconductor is full-control type power semiconductor.
Preferably, described overvoltage Limiting circuit is in cut-off state under the bridge-cut-off device normal operation of described two-way disjunction, and leakage current is less than 1 μ A; 1.5 times of the system voltage of conducting voltage threshold value residing for the bridge-cut-off device of described two-way disjunction of described overvoltage Limiting circuit.
According to a second aspect of the invention, a kind of input method of the bridge-cut-off device of described two-way disjunction that uses comprises the following steps.
In first step, the bridge-cut-off device of described two-way disjunction is connected the first and second incoming ends, described high speed machine switch disconnects, and described power semiconductor turns off.
In second step, the first, the 3rd and the 5th power semiconductor conducting, the electric current in bridge-cut-off device all flows through from transfer current circuit branch.
In third step, power semiconductor described in conducting and described high speed machine switch close a floodgate, and after electric current is all transferred to main current circuit, the first, the 3rd and the 5th power semiconductor conducting automatically shuts down.
According to a third aspect of the invention we, a kind of method for dividing of the bridge-cut-off device of described two-way disjunction that uses comprises the following steps.
In first step, when be short-circuited fault time, the first, the 3rd and the 5th power semiconductor conducting, the conducting of described transfer current circuit branch, control described power semiconductor and turn off main current circuit electric current, the electric current flowing through main current circuit shifts to transfer current circuit branch.
In second step, when electric current transfers to described current circuit branch road completely, described high speed machine switch disconnects, when electric current rises to threshold value, 5th power semiconductor turns off the electric current in described transfer current circuit branch, and the two ends of transfer current circuit branch produce overvoltage.
In third step, when overvoltage reaches the conduction threshold of described overvoltage Limiting circuit, overvoltage Limiting circuit turn-on, when electric current is less than the minimum On current 1mA of overvoltage Limiting circuit, overvoltage Limiting circuit is closed, described overvoltage Limiting circuit both end voltage declines, and when the electric current in described overvoltage Limiting circuit is 0, the bridge-cut-off device of described two-way disjunction has cut-off.
The scheme that the present invention proposes can complete quick disjunction bidirectional current with one group of unidirectional full-control type power semiconductor, electric capacity and inductor is not needed to improve the reliability of cut-offfing, can not electric arc be produced and the reaction time of circuit breaker short, improve sensitivity and the reliability of circuit breaker.
Accompanying drawing explanation
Fig. 1 is the structural representation of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Structural representation when Fig. 2 is the one-way only operation of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another structural representation when Fig. 3 is the one-way only operation of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Fig. 4 is the overvoltage Limiting circuit volt-ampere characteristic figure of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Fig. 5 is the input procedure structure schematic diagram of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Transfer current circuital current mark schematic diagram when Fig. 6 is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Circuital current flow graph when Fig. 7 (a) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Circuital current flow graph when Fig. 7 (b) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Circuital current flow graph when Fig. 7 (c) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Circuital current flow graph when Fig. 7 (d) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Circuital current flow graph when Fig. 7 (e) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another circuital current flow graph when Fig. 8 (a) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another circuital current flow graph when Fig. 8 (b) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another circuital current flow graph when Fig. 8 (c) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another circuital current flow graph when Fig. 8 (d) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Another circuital current flow graph when Fig. 8 (e) is the breaking current of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Curent change curve chart in circuit when Fig. 9 is the breaking current corresponding to Fig. 7 (a-e), 8 (a-e) of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction;
Figure 10 is the schematic diagram of the bridge-cut-off device of two-way in accordance with another embodiment of the present invention disjunction;
Figure 11 is the schematic diagram of the bridge-cut-off device of two-way in accordance with another embodiment of the present invention disjunction;
Figure 12 is the schematic diagram of the bridge-cut-off device of two-way in accordance with another embodiment of the present invention disjunction;
Figure 13 is the step schematic diagram of the input method of the bridge-cut-off device using two-way disjunction according to an embodiment of the invention;
Figure 14 is the step schematic diagram of the method for dividing of the bridge-cut-off device using two-way disjunction according to an embodiment of the invention.
Below in conjunction with drawings and Examples, the present invention is further explained.
Embodiment
Below describe in detail be in fact only exemplary and be not intended to limit application and use., and the theory constraint be not intended to by any clear and definite or hint presented in above technical field, background, brief overview or following detailed description in addition.Unless had contrary description clearly, otherwise word " comprises " and different modification should be understood to implicit and comprises described parts but do not get rid of any miscellaneous part.
Present embodiments describe a kind of bridge-cut-off device of two-way disjunction, the structural representation of the bridge-cut-off device of two-way according to an embodiment of the invention disjunction as shown in Figure 1, the bridge-cut-off device of two-way disjunction comprises main current circuit, transfer current circuit and overvoltage Limiting circuit.In order to circuit breaker breaking course is better described, there is shown herein the structural representation of the second incoming end S2 of circuit breaker current from the first incoming end S1 of system to system, as shown in Figure 2, the bridge-cut-off utensil comprised for embodying the present invention has two-way function, and Fig. 3 provides the structural representation of electric current from system access end S2 to system access end S1.In Fig. 2 and Fig. 3, the sense of current of power semiconductor is consistent with the direction of arrow of A0-A5 in figure.Fig. 4 gives the volt-ampere characteristic of overvoltage Limiting circuit.
See Fig. 1, the bridge-cut-off device of two-way disjunction disclosed in 2 and 3, the bridge-cut-off device of described two-way disjunction comprises main current circuit, transfer current circuit, overvoltage Limiting circuit and the first incoming end S1 and the second incoming end S2, described main current circuit, transfer current circuit and overvoltage Limiting circuit in parallel, described main current circuit is composed in series by high speed machine switch FCB and power semiconductor A0, wherein, described first incoming end S1 connects one end of high speed machine switch FCB to realize the connection of incoming end S1 and main current circuit one end, the other end of described high speed machine switch FCB connects one end of power semiconductor A0, the other end of described power semiconductor A0 connects described second incoming end S2 to realize the connection of the other end of incoming end S2 and described main current circuit.
Described transfer current circuit comprises the first power semiconductor A1, the second power semiconductor A2, the 3rd power semiconductor A3, the 4th power semiconductor A4 and the 5th power semiconductor A5 and forms.
Described first power semiconductor A1 transfer current circuit first branch road formed of connecting with the 4th power semiconductor A4 is in parallel with described main current circuit, wherein, described first incoming end S1 connects one end of described first power semiconductor A1 to realize the connection with one end of described first branch road, the other end of described first power semiconductor A1 is connected with one end of power semiconductor A4 described in the 4th, the other end of described 4th power semiconductor A4 is connected with described second incoming end S2, to realize the other end of described first branch road and the connection of described incoming end S2.
Described second power semiconductor A2 transfer current circuit second branch road formed of connecting with described 3rd power semiconductor A3 is in parallel with described main current circuit, wherein, described first incoming end S1 connects one end of described second power semiconductor A2 to realize the connection with one end of described second branch road, the other end of described second power semiconductor A2 is connected with one end of described 3rd power semiconductor A3, the other end of described 3rd power semiconductor A3 is connected with described second incoming end S2, to realize the other end of described second branch road and the connection of described incoming end S2,
The first end points between described first power semiconductor A1 and described 4th power semiconductor A4 connects can one end of the 5th power semiconductor A5 of cut-off current, and the other end of described 5th power semiconductor A5 connects the second end points between described second power semiconductor A2 and described 3rd power semiconductor A3;
Described power semiconductor A0 is the power semiconductor of two-way admittance, first, second, third, fourth and fifth power semiconductor A1, A2, A3, A4, A5 are the power semiconductor of one-way conduction, and wherein said power semiconductor A0 and described 5th power semiconductor A5 can cut-off current.
Should know situation when to illustrate only in for the embodiment of Fig. 2 for system power direction from S1 to S2, be a kind of example.Situation when system power is from S2 to S1, breaking course electric current flows through path as shown in Figure 3.Wherein, because circuit breaker can accept the system power from S1-S2 or S2-S1, be two-way circuit breaker, described power semiconductor A1 to A4 is uncontrollable or has the power semiconductor of half control function or its combination, and described power semiconductor is including, but not limited in Power Diode Pumped, thyristor, IGCT, IGBT and GTO or any number of combinations.It should be known that not only half control device has half control function, full control device also has half control function.
When the bridge-cut-off device of described two-way disjunction needs to cut-off, a separating brake in first and second high speed machine switch H1, H2 in described main current circuit, then by measuring another whether action and the corresponding action sequence in described first and second high speed machine switch H1, H2 that the current amplitude of described main current circuit and rate of change determine in power semiconductor A0 in described transfer current circuit and main current circuit.
In one embodiment, described overvoltage Limiting circuit is in cut-off state under the bridge-cut-off device normal operation of described two-way disjunction, and leakage current is less than 1 μ A; 1.5 times of the system voltage of conducting voltage threshold value residing for the bridge-cut-off device of described two-way disjunction of described overvoltage Limiting circuit.
In one embodiment, first, second, third, fourth and fifth power semiconductor A1, A2, A3, A4, A5 have the power semiconductor of full control function or its combination, described in there is the power semiconductor of full control function including, but not limited to any one in IGBT, GTO or any number of combinations.Wherein, described high speed machine switch is can for the high speed machine switch based on electromagnetic repulsion force, based on the mechanical switch of high-speed electric expreess locomotive driving or based on any one in the high speed machine switch of explosion driving.
Described overvoltage Limiting circuit be comprise piezo-resistance, zinc oxide valve plate composition MOV or lightning arrester in one or any number of combinations.
See Figure 13, the input method of the bridge-cut-off device of two-way disjunction is used to comprise the following steps.
In first step s1, the bridge-cut-off device of described two-way disjunction is connected first and second incoming end S1, S2, described high speed machine switch FCB disconnects, and described power semiconductor A0 turns off.
In second step s2, the first, the 3rd and the 5th power semiconductor A1, A3, A5 conducting, the electric current in bridge-cut-off device all flows through from transfer current circuit branch 1-5-3.
In third step s3, power semiconductor A0 described in conducting and described high speed machine switch FCB close a floodgate, and after electric current is all transferred to main current circuit, the first, the 3rd and the 5th power semiconductor A1, A3, A5 conducting automatically shuts down.
In one embodiment, particularly, can be as follows according to the input process of the concrete bridge-cut-off device using the input method of the bridge-cut-off device of two-way disjunction.
As the input procedure structure schematic diagram that Fig. 5 is the bridge-cut-off device of two-way according to an embodiment of the invention disjunction.Wherein S1, S2 and S3 are system access end, the equipment needed when isolating switch is circuit breaker connecting system, described system can be any required for the system of circuit breaker used, do not belong to the scope of the invention.
The input process of bridge-cut-off device
For electric current from S1 to S2, illustrate that the bridge-cut-off device that the present invention comprises drops into process.Input process is divided into following components.
When isolating switch 1 and isolating switch 2 disconnect, bridge-cut-off device is connected into first and second incoming end S1, S2 of system, during access, high speed machine switch contact is in off-state.
Close isolating switch 1 and isolating switch 2.Now, all power semiconductors of bridge-cut-off device are in closed condition, and system voltage is at bridge-cut-off device two ends.
If the in control chart 2 first, the 3rd and the 5th power semiconductor A1, A3 and A5 conducting current direction is that S2 is to S1, then control A4, A5 and A2 conducting, then the voltage at bridge-cut-off device two ends is limited by power semiconductor conduction voltage drop, and the electric current now in bridge-cut-off device all flows through from transfer current circuit branch circuit 1-5-3.
Control conducting power semiconductor device A0, control high speed machine switch to close a floodgate, the voltage power due to high speed machine switch ends is the conduction voltage drop of semiconductor device in transfer current circuit branch circuit 1-5-3, and voltage is lower simultaneously, making process there will not be electric arc, achieves and closes a floodgate without arc.
After combined floodgate completes, the voltage due to main current circuit two ends is less than the voltage at transfer current circuit branch circuit 1-5-3 two ends, and the electric current therefore flow through in the first, the 3rd and the 5th power semiconductor A1, A3 and A5 is transferred to main current circuit rapidly.After electric current is all transferred to main current circuit, the first, the 3rd and the 5th power semiconductor A1, A3 and A5 automatically shuts down.
So far, bridge-cut-off device drops into process and completes, and starts normally to run.
Overvoltage Limiting circuit turn-on and turn off process
As Fig. 4 gives the volt-ampere characteristic of overvoltage Limiting circuit.Wherein U1 is the on state threshold voltage of overvoltage Limiting circuit, and U2 is the ceiling voltage that overvoltage Limiting circuit has voltage clamping effect.When the voltage having served as voltage limiting circuit two ends is less than U1, overvoltage Limiting circuit ends, and its leakage current is less than 1 μ A, is namely in closed condition.After the voltage at voltage limiting circuit two ends reaches its conduction threshold, along with the sharply increase of electric current, the change in voltage at overvoltage Limiting electricity circuit two ends is very little.Overvoltage Limiting circuit design parameter comprises: the energy that voltage limiting circuit capacity absorbs, conducting voltage threshold value, electric current, the highest clamp voltage when reaching conducting voltage and be in the highest clamp voltage time electric current.When electric current is greater than the electric current of the highest clamp voltage, overvoltage Limiting circuit can lose voltage clamping effect, and overvoltage Limiting effect failure.Usually, overvoltage Limiting circuit turn-on threshold value is 1.5 times of normal operating condition, namely after overvoltage Limiting circuit turn-on due to its voltage clamping effect, when its inside has electric current to exist to be greater than 1mA, both end voltage is higher than system voltage, until the cut-off of overvoltage Limiting circuit turns off when system power is less than 1mA.
Bridge-cut-off device breaking course
Transfer current circuit each branch current mark when Fig. 6 gives breaking current, wherein i0 is the electric current flowing through incoming end S1 or incoming end S2, i1 is the electric current flowing through main current circuit, i2 is the electric current flowing through circuit 1, i3 is the electric current flowing through circuit 2, and i4 is the electric current flowing through circuit 3, and i5 is the electric current flowing through circuit 4, i6 is the electric current flowing through circuit 5, and i7 is the electric current flowing through voltage limiting circuit.
S2 is flowed to from S1, each branch current direction in transfer current circuit when Fig. 7 (a-e) gives breaking current, each branch current direction in concrete is corresponding each moment from t0 to t5 for electric current.The curent change curve of each branch road when Fig. 9 gives breaking current.
In one embodiment, see Figure 14, the method for dividing of the bridge-cut-off device of described two-way disjunction is used to comprise the following steps.
In first step s1, when be short-circuited fault time, the first, the 3rd and the 5th power semiconductor A1, A3, A5 conducting, described transfer current circuit branch 1-5-3 conducting, control described power semiconductor A0 and turn off main current circuit electric current, the electric current flowing through main current circuit shifts to transfer current circuit branch 1-5-3;
In second step s2, when electric current transfers to described current circuit branch road 1-5-3 completely, described high speed machine switch FCB disconnects, when electric current rises to threshold value, 5th power semiconductor A5 turns off the electric current in described transfer current circuit branch 1-5-3, and the two ends of transfer current circuit branch 1-5-3 produce overvoltage;
In third step s3, when overvoltage reaches the conduction threshold of described overvoltage Limiting circuit, overvoltage Limiting circuit turn-on, when electric current is less than the minimum On current 1mA of overvoltage Limiting circuit, overvoltage Limiting circuit is closed, described overvoltage Limiting circuit both end voltage declines, and when the electric current in described overvoltage Limiting circuit is 0, the bridge-cut-off device of described two-way disjunction has cut-off.
In one embodiment, the concrete operating procedure of the method for dividing of bridge-cut-off device comprises the following aspects, for the sense of current from S1 to S2:
System is normally run, and electric current all flows through from main current circuit, and as shown in Fig. 7 (a), wherein system nominal current is 10.In the t0 moment, system is short-circuited fault, and main current circuit electric current starts to rise, between t0 and t1, when exceeding system short-circuit threshold value, control system action, control conducting first, the 3rd and the 5th power semiconductor A1, A3, A5, current transfer circuit branch 1-5-3 conducting.
In the t1 moment, control power semiconductor A0 and turn off main current circuit electric current.Main current circuit electric current starts to reduce, and the electric current flowing through main current circuit shifts, as shown in Fig. 7 (b) to current transfer circuit branch 1-5-3.
In the t2 moment, high speed machine switching current is all transferred to the branch road of the first, the 3rd and the 5th power semiconductor A1, A3, A5 composition, as shown in Fig. 7 (c).Now control high speed machine switch to open without arc, form fracture.
Between t2 to t3, current transfer circuit branch 1-5-3 bears whole short circuit current.Treat that short circuit current rises to threshold value, in the t3 moment, controlling to have can electric current in the 5th power semiconductor A5 cut-off current carry circuit branch road 1-5-3 of cut-off current ability.
Between t3 to t4, overvoltage can be produced at circuit breaker two ends during the 5th power semiconductor A5 cut-off current, reach the conduction threshold of overvoltage Limiting circuit, overvoltage Limiting circuit turn-on.As shown in Fig. 7 (d), electric current starts to shift to overvoltage Limiting circuit.Due to the voltage clamping effect of overvoltage Limiting circuit, circuit breaker both end voltage ascensional range is very little.
In the t4 moment, the electric current in current transfer circuit branch 1-5-3 is all transferred to overvoltage Limiting circuit, and now the voltage at circuit breaker two ends reaches peak, is circuit breaker two ends overvoltage peak value in interrupting process.After this, the electric current in overvoltage Limiting circuit declines starting, and the voltage at circuit breaker two ends also starts slow decline, when system power is less than the minimum On current 1mA of overvoltage Limiting circuit.Overvoltage Limiting circuit is closed, and overvoltage Limiting circuit both end voltage declines rapidly.
In the t5 moment, the electric current in overvoltage Limiting circuit is 0, and circuit breaker has cut-off, and the voltage at circuit breaker two ends reduces to system voltage.Obviously, the present invention is shorter than the reaction time of prior art, and breaking speed is faster.
Similar, when the sense of current is that interrupting process is as follows from S2 to S1:
System is normally run, and electric current all flows through from main current circuit, and as shown in Fig. 8 (a-e), wherein system nominal current is 10.
In the t0 moment, system is short-circuited fault, and main current circuit electric current starts to rise, between t0 and t1, when exceeding system short-circuit threshold value, control system action, control conducting the 4th, the 5th and second power semiconductor A4, A5 and A2, current transfer branch road 4-5-2 conducting.
In the t1 moment, control power semiconductor A0 and turn off main current circuit electric current.Main current circuit electric current starts to reduce, and the electric current flowing through main current circuit shifts, as shown in Fig. 8 (b) to branch road 4-5-2.
In the t2 moment, high speed machine switching current is all transferred to the branch road of power semiconductor A4, A5 and A2 composition, as shown in Fig. 8 (c).Now control high speed machine switch to open without arc, form fracture.
Between t2 to t3, branch road 4-5-2 bears whole short circuit current.Treat that short circuit current rises to threshold value, in the t3 moment, control to have and the power semiconductor A5 of cut-off current ability can turn off electric current in branch road 4-5-2.
Between t3 to t4, overvoltage can be produced at circuit breaker two ends during A5 cut-off current, reach the conduction threshold of overvoltage Limiting circuit, overvoltage Limiting circuit turn-on.As shown in Fig. 8 (d), electric current starts to shift to overvoltage Limiting circuit.Due to the voltage clamping effect of overvoltage Limiting circuit, circuit breaker both end voltage ascensional range is very little.In the t4 moment, the electric current in branch road 4-5-2 is all transferred to overvoltage Limiting circuit, and now the voltage at circuit breaker two ends reaches peak, is circuit breaker two ends overvoltage peak value in interrupting process.After this, the electric current in overvoltage Limiting circuit declines starting, and the voltage at circuit breaker two ends also starts slow decline, when system power is less than the minimum On current 1mA of overvoltage Limiting circuit.Overvoltage Limiting circuit is closed, and overvoltage Limiting circuit both end voltage declines rapidly.
In the t5 moment, the electric current in overvoltage Limiting circuit is 0, and circuit breaker has cut-off, and the voltage at circuit breaker two ends reduces to system voltage.
Should know:
The described power semiconductor with half control function comprises any one or any number of combinations in thyristor, IGCT, IGBT and GTO.
The described power semiconductor with full control function comprises any one or any number of combinations in IGBT and GTO.
Described overvoltage Limiting circuit comprises piezo-resistance and auxiliary circuit thereof.
Described overvoltage Limiting circuit comprises the MOV or lightning arrester that are made up of zinc oxide valve plate.
In one embodiment, as shown in Figure 10, first, second, third, fourth power semiconductor A1, A2, A3, A4 is diode, and power semiconductor A0 and the 5th power semiconductor A5 is IGBT.
In one embodiment, as shown in figure 11, first, second, third, fourth power semiconductor A1, A2, A3, A4 is thyristor, and power semiconductor A0 and the 5th power semiconductor A5 is IGBT.
In one embodiment, the bridge-cut-off device of two-way disjunction as shown in figure 12, the bridge-cut-off device of described two-way disjunction comprises main current circuit, transfer current circuit, overvoltage Limiting circuit and the first incoming end S1 and the second incoming end S2, described main current circuit and transfer current circuit in parallel, described main current circuit is composed in series by high speed machine switch FCB and power semiconductor A0, wherein, described first incoming end S1 connects one end of high speed machine switch FCB, the other end of described high speed machine switch FCB connects one end of power semiconductor A0, the other end of described power semiconductor A0 connects described second incoming end S2.
Described transfer current circuit comprises the first power semiconductor A1, the second power semiconductor A2, the 3rd power semiconductor A3, the 4th power semiconductor A4 and the 5th power semiconductor A5 and forms, wherein,
Described first power semiconductor A1 transfer current circuit first branch road formed of connecting with the 4th power semiconductor A4 is in parallel with described main current circuit, wherein, described first incoming end S1 connects one end of described first power semiconductor A1, the other end of described first power semiconductor A1 is connected with one end of power semiconductor A4 described in the 4th, and the other end of described 4th power semiconductor A4 is connected with described second incoming end S2;
Described second power semiconductor A2 transfer current circuit second branch road formed of connecting with described 3rd power semiconductor A3 is in parallel with described main current circuit, wherein, described first incoming end S1 connects one end of described second power semiconductor A2, the other end of described second power semiconductor A2 is connected with one end of described 3rd power semiconductor A3, and the other end of described 3rd power semiconductor A3 is connected with described second incoming end S2;
The first end points between described first power semiconductor A1 and described 4th power semiconductor A4 connects can one end of the 5th power semiconductor A5 of cut-off current, the other end of described 5th power semiconductor A5 connects the second end points between described second power semiconductor A2 and described 3rd power semiconductor A3, end points between described first power semiconductor A1 and described 4th power semiconductor A4 connects one end of overvoltage Limiting circuit, the other end of described overvoltage Limiting circuit connects between described second power semiconductor A2 and described 3rd power semiconductor A3, described overvoltage Limiting circuit and the 5th power semiconductor A5 parallel connection.
Described power semiconductor A0 is the power semiconductor of two-way admittance, first, second, third, fourth and fifth power semiconductor A1, A2, A3, A4, A5 are the power semiconductor of one-way conduction, and wherein said power semiconductor A0 and described 5th power semiconductor A5 can cut-off current.
Further, described power semiconductor A0 and described 5th power semiconductor A5 is IGBT, and first, second, third, fourth power semiconductor A1, A2, A3, A4 is thyristor.
The invention discloses a kind of hybrid DC circuit breaker of two-way disjunction, quick breaking current can be completed, and realize completing quick disjunction bidirectional current with one group of unidirectional full-control type power semiconductor, improve the reliability and sensitivity cut-off.
Although be below described embodiment of the present invention by reference to the accompanying drawings, the present invention is not limited to above-mentioned specific embodiments and applications field, and above-mentioned specific embodiments is only schematic, guiding, instead of restrictive.Those of ordinary skill in the art, under the enlightenment of this specification and when not departing from the scope that the claims in the present invention are protected, can also make a variety of forms, and these all belong to the row of the present invention's protection.
Claims (10)
1. the bridge-cut-off device of a two-way disjunction, the bridge-cut-off device of described two-way disjunction comprises main current circuit, transfer current circuit, overvoltage Limiting circuit and the first incoming end (S1) and the second incoming end (S2), described main current circuit, transfer current circuit and overvoltage Limiting circuit in parallel, described main current circuit is composed in series by high speed machine switch (FCB) and power semiconductor (A0), wherein, described first incoming end (S1) connects one end of high speed machine switch (FCB), the other end of described high speed machine switch (FCB) connects one end of power semiconductor (A0), the other end of described power semiconductor (A0) connects described second incoming end (S2), it is characterized in that:
Described transfer current circuit is made up of the first power semiconductor (A1), the second power semiconductor (A2), the 3rd power semiconductor (A3), the 4th power semiconductor (A4) and the 5th power semiconductor (A5), wherein
Described first power semiconductor (A1) transfer current circuit first branch road formed of connecting with the 4th power semiconductor (A4) is in parallel with described main current circuit, wherein, described first incoming end (S1) connects one end of described first power semiconductor (A1), the other end of described first power semiconductor (A1) is connected with one end of power semiconductor (A4) described in the 4th, and the other end of described 4th power semiconductor (A4) is connected with described second incoming end (S2);
Described second power semiconductor (A2) transfer current circuit second branch road formed of connecting with described 3rd power semiconductor (A3) is in parallel with described main current circuit, wherein, described first incoming end (S1) connects one end of described second power semiconductor (A2), the other end of described second power semiconductor (A2) is connected with one end of described 3rd power semiconductor (A3), and the other end of described 3rd power semiconductor (A3) is connected with described second incoming end (S2);
The first end points between described first power semiconductor (A1) and described 4th power semiconductor (A4) connects can one end of the 5th power semiconductor (A5) of cut-off current, and the other end of described 5th power semiconductor (A5) connects the second end points between described second power semiconductor (A2) and described 3rd power semiconductor (A3);
The power semiconductor that described power semiconductor (A0) is two-way admittance, the power semiconductor that first, second, third, fourth and fifth power semiconductor (A1, A2, A3, A4, A5) is one-way conduction, wherein said power semiconductor (A0) and described 5th power semiconductor (A5) can cut-off currents.
2. the bridge-cut-off device of two-way disjunction according to claim 1, it is characterized in that: preferred, when the bridge-cut-off device of described two-way disjunction needs to cut-off, described high speed machine switch (FCB) separating brake in described main current circuit, then determines described first, second, third, fourth and fifth power semiconductor (A1, A2, A3, A4, A5) in described power semiconductor (A0) and described main current circuit whether action and corresponding action sequence by measuring the current amplitude of described main current circuit and rate of change.
3. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: described overvoltage Limiting circuit comprises one or any number of combinations in the lightning arrester of piezo-resistance, zinc oxide valve plate composition.
4. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: described first, second, third, fourth and the 5th power semiconductor (A1, A2, A3, A4, A5) be any one or multiple combinations in IGBT, GTO.
5. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: described first, second, third and fourth power semiconductor (A1, A2, A3, A4) is uncontrollable or half control type power semiconductor or its combination.
6. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: described high speed machine switch (FCB) is based on the high speed machine switch of electromagnetic repulsion force, based on the mechanical switch of high-speed electric expreess locomotive driving or the high speed machine switch based on explosion driving.
7. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: one or more in described first, second, third, fourth and fifth power semiconductor (A1, A2, A3, A4, A5) is full-control type power semiconductor.
8. the bridge-cut-off device of two-way disjunction according to claim 1, is characterized in that: described overvoltage Limiting circuit is in cut-off state under the bridge-cut-off device normal operation of described two-way disjunction, and leakage current is less than 1 μ A; 1.5 times of the system voltage of conducting voltage threshold value residing for the bridge-cut-off device of described two-way disjunction of described overvoltage Limiting circuit.
9. use an input method for the bridge-cut-off device of the two-way disjunction according to any one of claim 1-8, it comprises the following steps:
In first step (s1), the bridge-cut-off device of described two-way disjunction is connected the first and second incoming ends (S1, S2), described high speed machine switch (FCB) disconnects, and described power semiconductor (A0) turns off;
In second step (s2), the first, the 3rd and the 5th power semiconductor (A1, A3, A5) conducting, the electric current in bridge-cut-off device all flows through from transfer current circuit branch (1-5-3);
In third step (s3), power semiconductor described in conducting (A0) and described high speed machine switch (FCB) close a floodgate, after electric current is all transferred to main current circuit, the first, the 3rd and the 5th power semiconductor (A1, A3, A5) conducting automatically shuts down.
10. use a method for dividing for the bridge-cut-off device of the two-way disjunction according to any one of claim 1-8, it comprises the following steps:
In first step (s1), when be short-circuited fault time, the first, the 3rd and the 5th power semiconductor (A1, A3, A5) conducting, the conducting of described transfer current circuit branch (1-5-3), control described power semiconductor (A0) and turn off main current circuit electric current, the electric current flowing through main current circuit shifts to transfer current circuit branch (1-5-3);
In second step (s2), when electric current transfers to described current circuit branch road (1-5-3) completely, described high speed machine switch (FCB) disconnects, when electric current rises to threshold value, 5th power semiconductor (A5) turns off the electric current in described transfer current circuit branch (1-5-3), and the two ends of transfer current circuit branch (1-5-3) produce overvoltage;
In third step (s3), when overvoltage reaches the conduction threshold of described overvoltage Limiting circuit, overvoltage Limiting circuit turn-on, when electric current is less than the minimum On current 1mA of overvoltage Limiting circuit, overvoltage Limiting circuit is closed, described overvoltage Limiting circuit both end voltage declines, and when the electric current in described overvoltage Limiting circuit is 0, the bridge-cut-off device of described two-way disjunction has cut-off.
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Application publication date: 20160224 |
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| RJ01 | Rejection of invention patent application after publication |