CN105355743A - 发光二极管及其制作方法 - Google Patents

发光二极管及其制作方法 Download PDF

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CN105355743A
CN105355743A CN201510921693.2A CN201510921693A CN105355743A CN 105355743 A CN105355743 A CN 105355743A CN 201510921693 A CN201510921693 A CN 201510921693A CN 105355743 A CN105355743 A CN 105355743A
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CN105355743B (zh
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张洁
刘建明
朱学亮
徐宸科
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种发光二极管及其制作方法，通过在衬底的表面上植入一导电掩膜层，在该导电掩膜层上外延生长形成外延叠层，在外延叠层设置电流通道，当注入电流时，首先通过该电流通道传导至导电掩膜层，在该导电掩膜层进行横向扩展后进入外延叠层，有效改善了电流扩展均匀性，可降低器件工作电压。同时，导电掩膜层对光线具有反射作用，进一步提高萃取效率和发光亮度。

Description

发光二极管及其制作方法
技术领域
本发明涉及半导体领域，具体为一种具有电流扩展结构的发光二极管其及制作方法。
背景技术
氮化镓基发光二极管因为节能和绿色无污染等特点得到了越来越广泛的应用，但是因为LED芯片较差的电流扩展能力，极易发生电流拥堵而造成电压上升和效率损失，特别是在大电流高亮度应用例如道路照明、矿井照明或其他高光强应用领域继续尤为明显。
图1为传统正装结构氮化物发光二极管的结构图及其电流路径示意图，在蓝宝石衬底100上依次外延生长缓冲层101、n型半导体层102、有源层103、p型半导体层104、p型接触层105，分别在p型接触层105和n型氮化物半导体层102上形成p电极106和n电极107。在该正装LED结构中，因为电子从n电极向p电极移动会偏向较近的线路，因此p型半导体层和n型半导体层部分都存在严重的电流拥堵效应，会因为局部电流密度过高而造成电压升高和效率降低。目前在p型层可通过金属扩展条（英文为Finger）搭配ITO、GZO等透明导电层改善电流扩展，而n型部分只有扩展条技术以提高电流扩展均匀性。不过增加n型扩展条需要使用ICP或其他方法刻蚀去除p型半导体层、有源层到达n型半导体层，使得芯片发光面积变小，造成亮度损失。特别是对于大功率正装LED芯片，单颗面积较大，电流拥堵效应更明显，往往需要2根或更多数量的n型扩展条，对亮度会造成更大程度的损失和光电效率的降低。
发明内容
针对上述问题，本发明提供了一种具有电流扩展结构的发光二极管，通过在衬底的表面上植入一导电掩膜层，在该导电掩膜层上外延生长形成外延叠层，在该外延叠层设置电流通道，当注入电流时，首先通过该电流通道传导至导电掩膜层，在该导电掩膜层进行横向扩展后进入外延叠层，有效改善了电流扩展均匀性，可降低器件工作电压。
本发明的技术方案为：发光二极管，包括：绝缘衬底，具有相对的上、下表面；导电掩膜层设置于所述绝缘衬底上表面，具有曝露图形以裸露出所述衬底的部分上表面；外延叠层，通过外延生长被设置于所述导电掩膜层上，从下至上依次包含第一类型半导体层、有源层和第二类型半导体层；电流通道，设置于所述外延叠层，贯穿所述第一类型半导体层，与所述导电掩膜层连接，当向所述外延叠层注入电流时，大部分的电子电流通过该电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后再进入所述外延叠层。
本发明同时提供了一种发光二极管的制作方法，包括步骤：1）提供一绝缘衬底，其具有相对的上、下表面；2）在所述绝缘衬底的上表面上制作导电掩膜层，其具有曝露图形以裸露出所述衬底的部分上表面；3）在所述导电掩膜层上沉积外延叠层，从下至上依次包含第一类型半导体层、有源层和第二类型半导体层；4）在所述外延叠层制作电流通道，其贯穿所述第一类型半导体层，与所述导电掩膜层连接；当向所述外延叠层注入电流时，大部分的电子电流通过该电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后再进入所述外延叠层。
优选地，所述导电掩膜层的曝露图形规则排列，其尺寸为0.1~5μm。
优选地，所述导电掩膜层对所述有源层发射出的光线具有反射作用。
优选地，所述导电掩膜层由导电金属材料构成，以具有良好的导电性和高反射率为佳。
优选地，所述导电掩膜层由导电金属材料层和介电材料层水平混合排列而成。
优选地，所述导电掩膜层表面层设有一绝缘保护层。
在本发明的一个较佳实施例中，所述外延叠层划分为第一电极区和发光区，所述电流通道包括第一电流通道和第二电流通道，其中第一电流通道位于所述第一电极区，第二电流通道位于所述发光区；一第一电极被设置于所述第一类型半导体层表面上，通过所述第一电流通道与所述导电掩膜层形成电性连接；一第二电极被设置于所述第二型半导体层表面之上；所述导电掩膜层通过第二电流通道与所述第一类型半导体层形成电性连接，当向第一、第二电极注入电流时，由于导电掩膜层的导电性能远优于氮化物材料，因此绝大部分电子电流通过所述第一电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后沿第二电流通道流入所述第一类型半导体层。
优选地，所述第二电流通道贯穿所述第一类型半导体层、有源层、第二类型半导体层，与所述第一类型半导体层形成欧姆接触，与所述有源层、第二类型半导体层绝缘。在一些实施例中，所述第二电流通道位于所述有源层、第二类型半导体层的部分作为导光通道。在一些实施例，所述第二电流通道位于所述绝缘层和第一类型半导体层的部分填充导电材料，在位于所述有源层、第二类型半导体层的部分填充透光性绝缘材料。
在本发明的另一个较佳实施例中，所述外延叠层划分为第一电极区和发光区，所述电流通道位于所述第一电极区；一第一电极被设置于所述第一类型半导体层表面上，通过所述电流通道与所述导电掩膜层形成电性连接；一第二电极被设置于所述第二型半导体层表面之上；当向第一、第二电极注入电流时，因为导电掩膜层的导电性能远远优于氮化物材料，所以绝大部分电子电流通过所述电流通道传导至所述导电掩膜层，在所述导电掩膜层进行横向扩展后流入第一类型半导体层、有源层和第二类型半导体层。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
图1是根据本发明实施的一种发光二极管的结构剖视图。
图2~图5显示了适用于根据本发明实施的导电掩膜层2的各种图案。
图6是根据本发明实施的另一种发光二极管的结构剖视图。
图7是根据本发明实施的再一种发光二极管的结构剖视图。
具体实施方式
下面结合附图和优选的具体实施例对本发明做进一步说明。
参看图1，根据本发明实施的一种发光二极管，包括：绝缘衬底1、导电掩膜层2、u型氮化物层3、n型氮化物层4、n型超晶格结构层5、有源层6、p型电子阻挡层7、p型氮化物层8、电流扩展层9、p电极10、n电极11、第一电流通道12和第二电流通道13，其中n电极11所述第一电流通道12与导电掩膜层2形成电连连接，导电掩膜层2通过第二电流通道13与n型氮化物层形成电性连接。
其中，绝缘衬底1的选取包括但不限于蓝宝石、氮化铝、氮化镓等材料，其表面结构可为平面结构或图形化结构。
导电掩膜层2设置在该绝缘衬底1的上表面上，设有曝露图形2a以裸露出绝缘衬底1的部分上表面。在一些实施例中，导电掩膜层2的曝露图形均呈规则均匀排列，可为方形、圆形或者其他图案，其尺寸为0.1~5μm，如图2和图3所示，黑色为导电掩膜层2，白色为导电掩膜层2的曝露图形，其中图2为导电掩膜层2位于平片衬底的表面上，图3为导电掩膜层2位于图形化衬底的表面上。在一些实施例中，导电掩膜层2的曝露图形未均匀排列，其中靠近n电极11的曝露图形的尺寸较大，而远离n电极11的曝露图形的尺寸较小，在并一定距离后呈均匀分布，如图4所示，曝露图形A位于n电极11的正下方，其尺寸最大，曝露图形B和曝露图形C随着距离n电极11的距离变大，其尺寸逐渐缩小，并在曝露图形C范围以外保持相同的尺寸和密度。较佳的，导电掩膜层2选用具有良好导电性能和高反射率的导电金属材料为佳，如Al、Ag、Au等金属。在一些实施例中，导电掩掩层2为网格状导电金属材料层构成，例如图2和图3所示；在另一些实施例中，导电掩掩层2由导电金属材料层2b和介电材料层2c水平混合排列而成（诸如：Au/SiN、Au/SiO2等复合层），如图5所示，其中导电金属材料层2b的各个分支相互相连。
非故意掺杂氮化物层3（简称u型氮化物层3）、n型氮化物层4、n型超晶格结构层5、有源层6、p型电子阻挡层7、p型氮化物层8构成外延叠层，设置在该导电掩膜层的表面上。具体地，u型氮化物层3形成导电掩膜层2的表面上，其一般包括20~50nm的低温缓冲层、1~2μm的3D氮化物层和1~2μm的2D氮化物层。n型氮化物层4形成于u型氮化物层3的表面上，厚度1.5~4μm，掺杂浓度为5E18cm-3~2E19cm-3。n型超晶格结构层5形成于n型氮化物层4的表面上，可以为包含II、III、或者IV族元素的氮化碳或者氮化物的多层结构，诸如InGaN/GaN、AlGaN/GaN、InGaN/GaN/AlGaN、或者AlGaN/GaN/InGaN等。有源层6形成于n型超晶格层5的表面上，可以为多量子阱结构，以InGaN层作为阱层、GaN层作为势垒层，其中阱层的膜厚为18埃～30埃，势垒层的膜厚为80埃～200埃。电子阻挡层7形成于有源层6的表面之上，可由掺杂了Mg的氮化铝铟镓层构成，厚度为10~30nm。p型氮化物层8形成于有源层6的表面之上，厚度为50~150nm。该外延叠层划分为n电极区和发光区，其中n电极区通过蚀刻去除n型超晶格结构层5、有源层6、p型电子阻挡层7和p型氮化物层8，裸露出n型氮化物层4的表面。
请再参看图1，第一电流通道12位于外延叠层的n电极区，贯穿n型氮化物层4和缓冲层3，与导电掩膜层2连接；第二电流通道13位于外延叠层的发光区，贯穿整个外延叠层的各层。关于该第一、第二电流通道的制作方法：可通过化学蚀刻或干式蚀刻在外延叠层中形成微通孔，然后再微通孔下方13a填充导电材料至n型氮化物层4，从而保证了第一电流通道12与导电掩膜层2形成欧姆接触，第二电流通道13同时与导电掩膜层2和n型氮化物层4形成欧姆接触。在一些实施例中，为了保证第二电流通道13与有源层6、电子阻挡层7和p型氮化物层8绝缘，可在微通孔的上方13b填充绝缘材料。在一些实施例中，可通过注入离子的方式使微通孔13b位于n型氮化物层4以上的侧壁高阻化，在达到第二电流通道13与有源层6、电子阻挡层7和p型氮化物层8绝缘的同样，光由有源层6发射出后可经由微通孔13b向上穿出，有效减少外延材料层对光线的吸收效应。
电流扩展层9位于p型氮化物层8的表面上，其选用常规透明金属氧化物（诸如ITO等）即可。p电极10设置在电流扩展9的表面上，可设置扩展条。n电极11设置在n电极区裸露出的n型氮化物层4的表面上。
在上述发光二极管结构中，当向p、n电极注入电流时，因为金属的导电性能远远优于n型氮化物层（如n-GaN材料），所以绝大部分电子电流通过第一电流通道11传导至导电掩膜层2，并在导电掩膜层2进行横向扩展后沿第二电流通道13进入n型氮化物层4，有效改善了电流扩展均匀性，可降低器件工作电压。同时，导电掩膜层对光线具有反射作用，进一步提高芯片萃取效率和发光亮度。
上述发光二极管可通过下面方法制备获得。首先，在一衬底1的上表面上制作导电掩膜层2，导电掩膜层的图案可参考图2~图4进行选取；接着，采用MOCVD方式在该具有导电掩膜层的衬底外延生长包含u型氮化物层3、n型氮化物层4、n型超晶格结构层5、有源层6、p型电子阻挡层7、p型氮化物层8等结构层的外延叠层；接着，在形成的外延叠层表面定义n电极区和发光区，制作第一、第二电流通道，其制作方法参考前述即可；接着，蚀刻去除n电极区的n型超晶格结构层5、有源层6、p型电子阻挡层7和p型氮化物层8，裸露出n型氮化物层4的表面，形成n电极台面；接着，在p型氮化物层的表面上制作透明导电层9；最后，制作p、n电极。在该方法中，导电掩膜层2一方面作为外延生长的掩腌层，使外延层首先通过侧向生长获得高晶格质量的外延叠层，另一方面作为电流扩展层、反射层，可以有效提高器件的发光效率。
参看图6，根据本发明实施的另一种发光二极管，其与图1所示的发光二极管的区别在于：在导电掩膜层2的表面上制作一绝缘保护层14，材料可为SiO2。该绝缘保护层14的图案与导电掩膜层2的图案保持一致。
参看图7，根据本发明实施的再一种发光二极管，包括：绝缘衬底1、导电掩膜层2、n型掺杂缓冲层3’、n型氮化物层4、n型超晶格结构层5、有源层6、p型电子阻挡层7、p型氮化物层8、电流扩展层9、p电极10、n电极11、第一电流通道12，其中n电极11第一电流通道12与导电掩膜层2形成电连连接。
在该发光二极管中，采用n型掺杂的氮化物作为缓冲层，其掺杂深度为5E18cm-3以上，具有导电特性，如此当向p、n电极注入电流时，由于金属的导电性能远远优于n型氮化物层（如n-GaN材料），所以绝大部分电子电流通过第一电流通道11传导至导电掩膜层2，在该导电掩膜层进行横向扩展后流入n型掺杂缓冲层2、n型氮化物层3。在该发光二极管中，导电掩膜层2优选图4所示图案进行设计。
尽管已经描述本发明的示例性实施例，但是理解的是，本发明不应限于这些示例性实施例而是本领域的技术人员能够在如下文的权利要求所要求的本发明的精神和范围内进行各种变化和修改。

Claims (14)

1.发光二极管，包括：
绝缘衬底，具有相对的上、下表面；
导电掩膜层，设置于所述绝缘衬底上表面，具有曝露图形以裸露出所述衬底的部分上表面；
外延叠层，通过外延生长被设置于所述导电掩膜层上，从下至上依次包含第一类型半导体层、有源层和第二类型半导体层；
电流通道，设置于所述外延叠层，贯穿所述第一类型半导体层，与所述导电掩膜层连接，当向所述外延叠层注入电流时，大部分的电子电流通过该电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后再进入所述外延叠层。
2.根据权利要求1所述的发光二极管，其特征在于：所述导电掩膜层的曝露图形规则排列。
3.根据权利要求2所述的发光二极管，其特征在于：所述导电掩膜层的曝露图形之尺寸0.1~5μm。
4.根据权利要求1所述的发光二极管，其特征在于：所述导电掩膜层对所述有源层发射出的光线具有反射作用。
5.根据权利要求1所述的发光二极管，其特征在于：所述导电掩膜层由导电金属材料构成。
6.根据权利要求1所述的发光二极管，其特征在于：所述导电掩膜层由导电金属材料层和介电材料层水平混合排列而成。
7.根据权利要求1所述的发光二极管，其特征在于：
所述外延叠层划分为第一电极区和发光区，所述电流通道包括第一电流通道和第二电流通道，其中第一电流通道位于所述第一电极区，第二电流通道位于所述发光区；
一第一电极被设置于所述第一类型半导体层表面上，通过所述第一电流通道与所述导电掩膜层形成电性连接；
一第二电极被设置于所述第二型半导体层表面之上；
所述导电掩膜层通过第二电流通道与所述第一类型半导体层形成电性连接，当向第一、第二电极注入电流时，大部分的电子电流通过所述第一电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后沿第二电流通道流入所述第一类型半导体层。
8.根据权利要求7所述的发光二极管，其特征在于：所述第二电流通道贯穿第一类型半导体层、有源层、第二类型半导体层，与所述第一类型半导体层形成欧姆接触，与所述有源层、第二类型半导体层绝缘。
9.根据权利要求8所述的发光二极管，其特征在于：所述第二电流通道位于所述有源层、第二类型半导体层的部分作为导光通道。
10.根据权利要求1所述的发光二极管，其特征在于：
所述外延叠层划分为第一电极区和发光区，所述电流通道位于所述第一电极区；
一第一电极被设置于所述第一类型半导体层表面上，通过所述电流通道与所述导电掩膜层形成电性连接；
一第二电极被设置于所述第二型半导体层表面之上；
当向第一、第二电极注入电流时，大部分的电子电流通过所述电流通道传导至所述导电掩膜层，在所述导电掩膜层进行横向扩展后流入第一类型半导体层、有源层和第二类型半导体层。
11.根据权利要求1所述的发光二极管，其特征在于：所述导电掩膜层的表面上设有一绝缘保护层。
12.发光二极管的制作方法，包括步骤：
1）提供一绝缘衬底，其具有相对的上、下表面；
2）在所述绝缘衬底的上表面上制作导电掩膜层，其具有曝露图形以裸露出所述衬底的部分上表面；
3）在所述导电掩膜层上沉积外延叠层，从下至上依次包含第一类型半导体层、有源层和第二类型半导体层；
4）在所述外延叠层制作电流通道，其贯穿所述第一类型半导体层，与所述导电掩膜层连接；
当向所述外延叠层注入电流时，大分部的电子电流通过该电流通道传导至所述导电掩膜层，在该导电掩膜层进行横向扩展后再进入所述外延叠层。
13.根据权利要求12所述的发光二极管的制作方法，其特征在于：所述步骤4）中还包括：将所述外延叠层划分为第一电极区和发光区，所述电流通道位于所述第一电极区。
14.根据权利要求12所述的发光二极管的制作方法，其特征在于：所述步骤4）中还包括：将所述外延叠层划分为第一电极区和发光区，所述电流通包括第一电流通道和第二电流通道，其中第一电流通道位于所述第一电极区，第二电流通道位于所述发光区；在所述第一类型半导体层表面上制作第一电极，其通过所述第一电流通道与所述导电掩膜层形成电性连接；在第二型半导体层表面之上制作第二电极；所述导电掩膜层通过所述第二通道与所述第一类型半导体层形成电性连接，当向第一、第二电极注入电流时，大部分的电子电流通过所述第一电流通道传导至所述导电掩膜层，在所述导电掩膜层进行横向扩展后沿第二电流通道流入所述第一类型半导体层。
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CN109524526A (zh) * 2018-11-19 2019-03-26 华中科技大学鄂州工业技术研究院 新型深紫外发光二极管芯片及其制备方法
CN109524526B (zh) * 2018-11-19 2020-07-31 华中科技大学鄂州工业技术研究院 深紫外发光二极管芯片及其制备方法
CN113363365A (zh) * 2021-08-09 2021-09-07 南昌凯捷半导体科技有限公司 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
CN114597295A (zh) * 2022-02-23 2022-06-07 厦门大学 一种Mini/Micro LED的芯片结构及制备方法

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