CN105340063A - 用于等离子体处理系统的天线阵列配置 - Google Patents
用于等离子体处理系统的天线阵列配置 Download PDFInfo
- Publication number
- CN105340063A CN105340063A CN201480037128.3A CN201480037128A CN105340063A CN 105340063 A CN105340063 A CN 105340063A CN 201480037128 A CN201480037128 A CN 201480037128A CN 105340063 A CN105340063 A CN 105340063A
- Authority
- CN
- China
- Prior art keywords
- loop antenna
- antenna array
- closed
- plasmatron
- linear pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000004157 plasmatron Methods 0.000 claims 12
- 230000008021 deposition Effects 0.000 abstract description 64
- 239000000758 substrate Substances 0.000 description 73
- 210000002381 plasma Anatomy 0.000 description 56
- 239000007789 gas Substances 0.000 description 25
- 238000003491 array Methods 0.000 description 21
- 239000004020 conductor Substances 0.000 description 16
- 230000009977 dual effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361829476P | 2013-05-31 | 2013-05-31 | |
| US61/829,476 | 2013-05-31 | ||
| PCT/US2014/034144 WO2014193553A1 (en) | 2013-05-31 | 2014-04-15 | Antenna array configurations for plasma processing systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105340063A true CN105340063A (zh) | 2016-02-17 |
Family
ID=51989299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480037128.3A Pending CN105340063A (zh) | 2013-05-31 | 2014-04-15 | 用于等离子体处理系统的天线阵列配置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016530699A (https=) |
| KR (1) | KR20160016917A (https=) |
| CN (1) | CN105340063A (https=) |
| WO (1) | WO2014193553A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10682059B1 (en) * | 2018-12-28 | 2020-06-16 | Endra Life Sciences Inc. | Radio frequency applicator and thermoacoustic imaging system employing the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1537405A (zh) * | 2001-07-30 | 2004-10-13 | 株式会社普来马特 | 感应耦合等离子体发生器天线结构 |
| JP2004349199A (ja) * | 2003-05-26 | 2004-12-09 | Mitsui Eng & Shipbuild Co Ltd | プラズマ発生用アンテナ装置及びプラズマ処理装置 |
| CN1809911A (zh) * | 2003-05-22 | 2006-07-26 | 赫利森有限责任公司 | 高密度等离子体反应器 |
| US20080272700A1 (en) * | 2007-05-01 | 2008-11-06 | Delta Electronics, Inc. | Plasma generating device |
| TW200850082A (en) * | 2007-03-30 | 2008-12-16 | Mitsui Engineering & Shipbuilding Co Ltd | Plasma generator and film forming apparatus using plasma |
| CN102056396A (zh) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02112010U (https=) * | 1989-02-27 | 1990-09-07 | ||
| JP2519364B2 (ja) * | 1990-12-03 | 1996-07-31 | アプライド マテリアルズ インコーポレイテッド | Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ |
| JPH051383A (ja) * | 1991-06-25 | 1993-01-08 | Canon Inc | 大面積マイクロ波プラズマｃｖｄ装置 |
| JPH06251896A (ja) * | 1992-12-28 | 1994-09-09 | Hitachi Ltd | プラズマ処理方法及び装置 |
| KR100238627B1 (ko) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | 플라즈마 처리장치 |
| JP3630765B2 (ja) * | 1995-04-04 | 2005-03-23 | キヤノン株式会社 | 堆積膜の製造装置およびその製造方法 |
| JP3501668B2 (ja) * | 1997-12-10 | 2004-03-02 | キヤノン株式会社 | プラズマｃｖｄ方法及びプラズマｃｖｄ装置 |
| JP2000345351A (ja) * | 1999-05-31 | 2000-12-12 | Anelva Corp | プラズマｃｖｄ装置 |
| JP3836636B2 (ja) * | 1999-07-27 | 2006-10-25 | 独立行政法人科学技術振興機構 | プラズマ発生装置 |
| KR100523851B1 (ko) * | 2003-05-07 | 2005-10-27 | 학교법인 성균관대학 | 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치 |
| KR101397646B1 (ko) * | 2008-01-30 | 2014-05-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 임피던스 천이와의 통합된 마이크로파 도파관 |
| US20120279943A1 (en) * | 2011-05-03 | 2012-11-08 | Applied Materials, Inc. | Processing chamber with cooled gas delivery line |
-
2014
- 2014-04-15 JP JP2016516652A patent/JP2016530699A/ja active Pending
- 2014-04-15 CN CN201480037128.3A patent/CN105340063A/zh active Pending
- 2014-04-15 WO PCT/US2014/034144 patent/WO2014193553A1/en not_active Ceased
- 2014-04-15 KR KR1020157036828A patent/KR20160016917A/ko not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1537405A (zh) * | 2001-07-30 | 2004-10-13 | 株式会社普来马特 | 感应耦合等离子体发生器天线结构 |
| CN1809911A (zh) * | 2003-05-22 | 2006-07-26 | 赫利森有限责任公司 | 高密度等离子体反应器 |
| JP2004349199A (ja) * | 2003-05-26 | 2004-12-09 | Mitsui Eng & Shipbuild Co Ltd | プラズマ発生用アンテナ装置及びプラズマ処理装置 |
| TW200850082A (en) * | 2007-03-30 | 2008-12-16 | Mitsui Engineering & Shipbuilding Co Ltd | Plasma generator and film forming apparatus using plasma |
| US20080272700A1 (en) * | 2007-05-01 | 2008-11-06 | Delta Electronics, Inc. | Plasma generating device |
| CN102056396A (zh) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016530699A (ja) | 2016-09-29 |
| WO2014193553A1 (en) | 2014-12-04 |
| KR20160016917A (ko) | 2016-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20190716 |