CN105322041A - Copper strip with high oxidation resistance - Google Patents
Copper strip with high oxidation resistance Download PDFInfo
- Publication number
- CN105322041A CN105322041A CN201510344355.7A CN201510344355A CN105322041A CN 105322041 A CN105322041 A CN 105322041A CN 201510344355 A CN201510344355 A CN 201510344355A CN 105322041 A CN105322041 A CN 105322041A
- Authority
- CN
- China
- Prior art keywords
- copper
- copper strips
- copper strip
- present
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 65
- 239000010949 copper Substances 0.000 title claims abstract description 65
- 230000003647 oxidation Effects 0.000 title abstract description 4
- 238000007254 oxidation reaction Methods 0.000 title abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000003963 antioxidant agent Substances 0.000 claims description 14
- 230000003078 antioxidant effect Effects 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 229910016006 MoSi Inorganic materials 0.000 claims description 4
- 229910018104 Ni-P Inorganic materials 0.000 claims description 4
- 229910018098 Ni-Si Inorganic materials 0.000 claims description 4
- 229910018536 Ni—P Inorganic materials 0.000 claims description 4
- 229910018529 Ni—Si Inorganic materials 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 19
- 239000002585 base Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 230000003026 anti-oxygenic effect Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001458 anti-acid effect Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a copper strip with high oxidation resistance, and belongs to the technical field of production of solar components. The copper strip comprises a flat copper base (1); and the copper strip is characterized in that a nano protection layer (2) is formed on at least one surface of the copper base (1) by a surface sputtering deposition method. According to the copper strip, the technical problems that the copper strip in the prior art is easily oxidized and the surface quality of a solder strip is affected are solved; and the copper strip has the advantages of good oxidation resistance, good weldability, high tensile strength and the like.
Description
Technical field
The present invention relates to the copper strips for the production of photovoltaic welding belt, particularly relate to a kind of high antioxidant copper strips, belong to solar components production technical field.
Background technology
Welding is the important raw and processed materials in welding photovoltaic component technique, and the quality of welding quality will directly have influence on the collection efficiency of photovoltaic module electric current, very large to the power influences of photovoltaic module.Therefore require just very high to the raw material of welding, especially copper strips, copper strips directly affects the apparent and various mechanical property of producing welding, is the key factor determining welding quality.
Produce the red copper that the copper strips material used in welding technique is all generally high-purity (> 99.90%), due to copper strips producing, transport, deposit in process and expose in atmosphere, affect larger by factors such as external environments, easily oxidized, and oxide and tin can not be good combine, cause, in welding production process, easily causing welding blemish, affect the quality on welding surface.Visible, the copper strips quality used in photovoltaic industry needs improvement badly.
Utilize gas phase deposition technology in the development of fine copper substrate surface plated film rapidly, it not only can be used for preparing the various film coating possessing special mechanical property (as superhard, high anti-corrosion, heat-resisting and antioxygenic property etc.), and can also be used to prepare various film material with function and decorating film coating etc.Therefore, utilize the above-mentioned advantage of film coating, form layer protecting film, anti-oxidation at copper-based surfaces, the fraction defective reducing welding becomes the important subject of photovoltaic module copper strips improvement.
Summary of the invention
The present invention is directed to easily oxidized, the technical problem that affects welding surface quality of copper strips in prior art, provide a kind of high antioxidant copper strips, improve the non-oxidizability of copper strips, reduce the blemish of producing welding product, especially pin hole is bad.
For this reason, the present invention adopts following technical scheme:
A kind of high antioxidant copper strips, comprises the copper base in flat belt-like, it is characterized in that: utilize surface sputtering deposition process to form one deck nanometer protective layer at least one surface of copper base.
Further, the material of described nanometer protective layer is MoSi
2, Ni-Si
3n
4, Al
2o
3, one in Ni-P, Ti/DLC, or be, two or more mixture.
Further, described nanometer protective layer thickness is that 350 nanometers are to 450 nanometers.
Further, the cross section of front described copper base is rectangular, or both sides minor face is curved.
Further, described copper base thickness is 0.18 ~ 0.25mm.
The present invention compared with prior art has following beneficial effect:
The present invention is by least one the plated surface last layer nanometer protective layer at copper base, utilize the stability of nanometer protective layer, antioxygenic property, effectively extend the copper strip surface oxidized time, effectively reduce the blemish of the photovoltaic welding belt product utilizing the present invention to produce, especially pin hole is bad; Meanwhile, copper strips solderability provided by the invention is good, tensile strength is high, and elongation and resistivity all can fully meet engineer applied needs.Therefore, structure of the present invention is simple, effective, is suitable for commercial introduction and uses, have value widely.
Accompanying drawing explanation
Fig. 1, Fig. 2 are structural representations of the present invention; In figure, 1 is copper base, and 2 is nanometer protective layer.
Embodiment
In order to make those skilled in the art person better understand the present invention program, carry out clear, complete description below in conjunction with specific embodiment to technical scheme of the present invention, part same as the prior art in the present invention is with reference to prior art.
As shown in Figure 1-2, the copper strips of high antioxidant of the present invention, comprise the copper base 1 in flat belt-like, copper base 1 has upper surface and lower surface, utilizes surface sputtering deposition process by MoSi
2be attached to the upper and lower surface of copper base, thus respectively form one deck nanometer protective layer 2 on two surfaces of copper base 1.
Certainly, individual in other embodiments, the material of nanometer protective layer 2 also can select Ni-Si
3n
4, Al
2o
3, any one in Ni-P, Ti/DLC; Or, select MoSi
2, Ni-Si
3n
4, Al
2o
3, two or more mixture of Ni-P, Ti/DLC.
The thickness of nanometer protective layer 2 is that 350 nanometers are to 450 nanometers; The cross section of copper base 1 is rectangular, or both sides minor face is curved; The thickness of the copper strips of described flat is 0.18 ~ 0.25mm.
Copper base 1 adopt copper content thickness more than 99.90% be 14 millimeters to 150 millimeters red copper, adopt repeatedly continuous print roll and annealing process process, copper base 1 thickness obtained is 180 microns to 200 microns.
The copper strips of high antioxidant of the present invention, compares with existing copper strips, and under identical storage condition, the period of storage of copper strips increased present 20 days from original 6 days, considerably increased the warehouse period of storage of copper strips, fully can meet the needs of engineer applied.Although the organic type antioxidant that existing common copper strips adds when mechanical refining technique, the time maintaining oxidation resistance is not long, and the antioxidant that the present invention adds is inorganic matter, and the antioxygenic property duration is long.
The welding finished product utilizing the present embodiment to make, its reliability testing also strengthens greatly.Through the test of two " 85 ", under identical situation of change, the welding finished product test time of high antioxidant extends 20% than existing welding.
Due to the special nature of nano protective film material in the present embodiment, define one deck membrane layer at copper strip surface, the acid-alkali-corrosive-resisting performance of novel copper strips is improved greatly, under standard acid-base corrosion test condition, the antiacid alkali ability of copper strips promotes about 1 times.
The welding finished product utilizing the present embodiment to make, hot strength is also high than prior art copper strips.The average tensile strength of prior art copper strips is 220Mpa, and the average tensile strength of copper strips of the present invention is 280MPa.Corresponding elongation also corresponding increase, the average elongation of prior art copper strips is 35%, and the average elongation of copper strips of the present invention is 46%.
Obviously, embodiment described above is only section Example of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Claims (5)
1. a high antioxidant copper strips, comprises the copper base (1) in flat, it is characterized in that: utilize surface sputtering deposition process to form one deck nanometer protective layer (2) at least one surface of copper base (1).
2. high antioxidant copper strips according to claim 1, is characterized in that: the material of described nanometer protective layer (2) is MoSi
2, Ni-Si
3n
4, Al
2o
3, one in Ni-P, Ti/DLC, or be, two or more mixture.
3. high antioxidant copper strips according to claim 1, is characterized in that: described nanometer protective layer (2) thickness is that 350 nanometers are to 450 nanometers.
4., according to the arbitrary described high antioxidant copper strips of claim 1-3, it is characterized in that: the cross section of described copper base (1) is rectangular, or both sides minor face is curved.
5., according to the arbitrary described high antioxidant copper strips of claim 1-3, it is characterized in that: copper base (1) thickness of described flat is 0.18 ~ 0.25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510344355.7A CN105322041A (en) | 2015-06-19 | 2015-06-19 | Copper strip with high oxidation resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510344355.7A CN105322041A (en) | 2015-06-19 | 2015-06-19 | Copper strip with high oxidation resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105322041A true CN105322041A (en) | 2016-02-10 |
Family
ID=55249043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510344355.7A Pending CN105322041A (en) | 2015-06-19 | 2015-06-19 | Copper strip with high oxidation resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105322041A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653910A (en) * | 2016-12-23 | 2017-05-10 | 中利腾晖光伏科技有限公司 | Photovoltaic welding strip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886535A (en) * | 2003-09-29 | 2006-12-27 | 通用电气公司 | Nano-structured coating system, component and related production method |
| CN200965878Y (en) * | 2006-11-01 | 2007-10-24 | 佰皇科技股份有限公司 | Semiconductor package welding materials |
| CN205376552U (en) * | 2015-06-19 | 2016-07-06 | 常州天合光伏焊带材料有限公司 | High oxidation resistance copper strips |
-
2015
- 2015-06-19 CN CN201510344355.7A patent/CN105322041A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886535A (en) * | 2003-09-29 | 2006-12-27 | 通用电气公司 | Nano-structured coating system, component and related production method |
| CN200965878Y (en) * | 2006-11-01 | 2007-10-24 | 佰皇科技股份有限公司 | Semiconductor package welding materials |
| CN205376552U (en) * | 2015-06-19 | 2016-07-06 | 常州天合光伏焊带材料有限公司 | High oxidation resistance copper strips |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653910A (en) * | 2016-12-23 | 2017-05-10 | 中利腾晖光伏科技有限公司 | Photovoltaic welding strip and preparation method thereof |
| CN106653910B (en) * | 2016-12-23 | 2019-03-29 | 苏州腾晖光伏技术有限公司 | A kind of photovoltaic welding belt and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161228 Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: Tianhe Optic Energy Co., Ltd., Changzhou Applicant after: Changzhou United Mstar Technology Ltd Address before: 213031 Jiangsu city of Changzhou province Xinbei Longhu Street Innovation Road No. 1-5 (Electronic Industrial Park) Applicant before: CHANGZHOU TRINASOLAR PHOTOVOLTAIC WELDING MATERIALS CO., LTD. Applicant before: Tianhe Optic Energy Co., Ltd., Changzhou |
|
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160210 |
|
| RJ01 | Rejection of invention patent application after publication |