CN205376552U - High oxidation resistance copper strips - Google Patents
High oxidation resistance copper strips Download PDFInfo
- Publication number
- CN205376552U CN205376552U CN201520428576.8U CN201520428576U CN205376552U CN 205376552 U CN205376552 U CN 205376552U CN 201520428576 U CN201520428576 U CN 201520428576U CN 205376552 U CN205376552 U CN 205376552U
- Authority
- CN
- China
- Prior art keywords
- copper strips
- utility
- model
- cuprio
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 42
- 239000010949 copper Substances 0.000 title claims abstract description 42
- 230000003647 oxidation Effects 0.000 title abstract description 5
- 238000007254 oxidation reaction Methods 0.000 title abstract description 5
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000003963 antioxidant agent Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 229910020968 MoSi2 Inorganic materials 0.000 description 3
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000003026 anti-oxygenic effect Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001458 anti-acid effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model discloses a high oxidation resistance copper strips belongs to solar energy component production technical field, including the copper base (1) that is the platykurtic, its characterized in that: utilize surface sputtering deposition method to form one deck nanometer protective layer (2) on at least one surface of copper base (1), nanometer protective layer (2) thickness is 350 nanometers to 450 nanometers. The copper strips was easily welded the technical problem who takes surface quality by oxidation, influence during it solved prior art. The utility model has the advantages of good antioxidant activity, weldbility is good, tensile strength is high.
Description
Technical field
This utility model relates to produce the copper strips of photovoltaic welding belt, particularly relates to a kind of high antioxidant copper strips, belongs to solar components production technical field.
Background technology
Welding is the important raw and processed materials in welding photovoltaic component technique, and the quality of welding quality will directly influence the collection efficiency of photovoltaic module electric current, affects very big on the power of photovoltaic module.Therefore requiring just significantly high to the raw material of welding, especially copper strips, copper strips directly affects the apparent and various mechanical property producing welding, is the key factor determining welding quality.
Produce the copper strips material used in welding technique and be typically all the red copper of high-purity (> 99.90%), due to copper strips producing, transport, deposit and process exposes in atmosphere, affected bigger by factors such as external environments, easily oxidized, and oxide and stannum can not be good combine, cause in welding production process, it is easy to cause welding surface defect, affect the quality on welding surface.Visible, the copper strips quality used in photovoltaic industry needs improvement badly.
Gas phase deposition technology is utilized to quickly grow at fine copper substrate surface plated film, it is possible not only to for preparing the various film coating possessing special mechanical property (such as superhard, high anti-corrosion, heat-resisting and antioxygenic property etc.), but also can be used to prepare various film material with function and decorating film coating etc..Therefore, utilizing the above-mentioned advantage of film coating, form layer protecting film at copper-based surfaces, it is prevented that oxidation, the fraction defective reducing welding becomes the important subject of photovoltaic module copper strips improvement.
Summary of the invention
This utility model for copper strips in prior art easily oxidized, affect the technical problem of welding surface quality, it is provided that a kind of high antioxidant copper strips, improve the non-oxidizability of copper strips, reduce the surface defect producing welding product, especially pin hole is bad.
For this, this utility model adopts the following technical scheme that
A kind of high antioxidant copper strips, including the cuprio being flat belt-like, it is characterised in that: utilizing surface sputtering deposition process to form one layer of nanometer of protective layer at least one surface of cuprio, described nanometer of protective layer (2) thickness is 350 nanometers to 450 nanometers.
Further, the material of described nanometer of protective layer is MoSi2、Ni-Si3N4、Al2O3, one in Ni-P, Ti/DLC, or be, two or more mixture.
Further, the cross section of front described cuprio is rectangular, or both sides minor face is curved.
Further, described cuprio thickness is 0.18～0.25mm.
This utility model compared with prior art has the advantages that
This utility model is by least one the plated surface last layer nanometer protective layer at cuprio; utilize the stability of nanometer protective layer, antioxygenic property; effectively extend the time that copper strip surface is oxidized; effectively reducing the surface defect of the photovoltaic welding belt product utilizing this utility model to produce, especially pin hole is bad；Meanwhile, the copper strips solderability that this utility model provides is good, tensile strength is high, and elongation percentage and resistivity all can fully meet engineer applied needs.Therefore, this utility model simple in construction, effective, it is suitable for commercial introduction and uses, there is value widely.
Accompanying drawing explanation
Fig. 1, Fig. 2 are structural representations of the present utility model；In figure, 1 is cuprio, and 2 is a nanometer protective layer.
Detailed description of the invention
In order to make those skilled in the art be better understood from this utility model scheme, below in conjunction with specific embodiment, the technical solution of the utility model being carried out clear, complete description, part same as the prior art in this utility model will with reference to prior art.
As shown in Figure 1 and Figure 2, the copper strips of high antioxidant of the present utility model, including the cuprio 1 being flat belt-like, cuprio 1 has upper and lower surface, utilizes surface sputtering deposition process by MoSi2It is attached to the upper and lower surface of cuprio, thus respectively forming one layer of nanometer of protective layer 2 on two surfaces of cuprio 1.
Certainly, individual in other embodiments, the material of nanometer protective layer 2 can also select Ni-Si3N4、Al2O3, any one in Ni-P, Ti/DLC；Or, select MoSi2、Ni-Si3N4、Al2O3, two or more mixture of Ni-P, Ti/DLC.
The thickness of nanometer protective layer 2 is 350 nanometers to 450 nanometers；The cross section of cuprio 1 is rectangular, or both sides minor face is curved；The thickness of the copper strips of described flat is 0.18～0.25mm.
Cuprio 1 adopt copper content thickness more than 99.90% be 14 millimeters to 150 millimeters red copper, adopt repeatedly continuous print calendering and annealing process process, cuprio 1 thickness obtained is 180 microns to 200 microns.
The copper strips of high antioxidant of the present utility model, comparing with existing copper strips, under identical storage requirement, the period of storage of copper strips increased present 20 day from original 6 days, considerably increase the warehouse period of storage of copper strips, it is possible to fully meet the needs of engineer applied.Although the organic type antioxidant that existing common copper strips adds when mechanical refining technique, but, the time maintaining oxidation resistance is not long, and the antioxidant that this utility model adds is inorganic matter, and the antioxygenic property persistent period is long.
Utilizing the welding finished product that the present embodiment is made, its reliability testing is also greatly enhanced.Through the test of double; two " 85 ", under identical situation of change, the welding finished product test time of high antioxidant extends 20% than existing welding.
Due to the special nature of nano protective film material in the present embodiment, defining one layer of membrane layer at copper strip surface so that the acid-alkali-corrosive-resisting performance of novel copper strips is greatly improved, when standard acid-base corrosion test, the antiacid alkali ability of copper strips promotes about 1 times.
Utilizing the welding finished product that the present embodiment is made, hot strength is also high than prior art copper strips.The average tensile strength of prior art copper strips is 220Mpa, and the average tensile strength of this utility model copper strips is 280MPa.Corresponding elongation percentage also increases accordingly, and the average elongation of prior art copper strips is 35%, and the average elongation of the novel copper strips of this use is 46%.
Obviously, embodiments described above is only section Example of the present utility model, rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, all should belong to the scope of this utility model protection.
Claims (3)
1. a high antioxidant copper strips; including the cuprio (1) being flat; it is characterized in that: utilizing surface sputtering deposition process to form one layer of nanometer of protective layer (2) at least one surface of cuprio (1), described nanometer of protective layer (2) thickness is 350 nanometers to 450 nanometers.
2. high antioxidant copper strips according to claim 1, it is characterised in that: the cross section of described cuprio (1) is rectangular, or both sides minor face is curved.
3. high antioxidant copper strips according to claim 1, it is characterised in that: cuprio (1) thickness of described flat is 0.18～0.25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520428576.8U CN205376552U (en) | 2015-06-19 | 2015-06-19 | High oxidation resistance copper strips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520428576.8U CN205376552U (en) | 2015-06-19 | 2015-06-19 | High oxidation resistance copper strips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205376552U true CN205376552U (en) | 2016-07-06 |
Family
ID=56260267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520428576.8U Active CN205376552U (en) | 2015-06-19 | 2015-06-19 | High oxidation resistance copper strips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205376552U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322041A (en) * | 2015-06-19 | 2016-02-10 | 常州天合光伏焊带材料有限公司 | Copper strip with high oxidation resistance |
| CN109183101A (en) * | 2018-10-24 | 2019-01-11 | 深圳市广福来珠宝实业有限公司 | A kind of anti-black method of Silver Jewelry plating |
-
2015
- 2015-06-19 CN CN201520428576.8U patent/CN205376552U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322041A (en) * | 2015-06-19 | 2016-02-10 | 常州天合光伏焊带材料有限公司 | Copper strip with high oxidation resistance |
| CN109183101A (en) * | 2018-10-24 | 2019-01-11 | 深圳市广福来珠宝实业有限公司 | A kind of anti-black method of Silver Jewelry plating |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161129 Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Patentee after: CHANGZHOU HESAI NEW MATERIAL TECHNOLOGY CO.,LTD. Address before: 213031 Jiangsu city of Changzhou province Xinbei Longhu Street Innovation Road No. 1-5 (Electronic Industrial Park) Patentee before: CHANGZHOU TIANHE PHOTOVOLTAIC WELDING STRIP MATERIAL CO.,LTD. Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20170825 Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address before: Trina 2, Tianhe Industrial Park, Xinbei District, new North Co-patentee before: CHANGZHOU HESAI NEW MATERIAL TECHNOLOGY CO.,LTD. Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP01 | Change in the name or title of a patent holder |