CN105321831A - Method for manufacturing electronic component package - Google Patents
Method for manufacturing electronic component package Download PDFInfo
- Publication number
- CN105321831A CN105321831A CN201510358148.7A CN201510358148A CN105321831A CN 105321831 A CN105321831 A CN 105321831A CN 201510358148 A CN201510358148 A CN 201510358148A CN 105321831 A CN105321831 A CN 105321831A
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- Prior art keywords
- hole
- substrate
- groove
- mould
- electronic
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 229920005989 resin Polymers 0.000 claims abstract description 63
- 239000011347 resin Substances 0.000 claims abstract description 63
- 238000007789 sealing Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000004382 potting Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 19
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 9
- 238000000748 compression moulding Methods 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 231100000241 scar Toxicity 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a method for manufacturing an electronic component package. By employing the method, grooves for shielding or holes for through holes can be formed in sealing resin on the premise that a substrate or a wire on the substrate is not broken. The method is used for forming the grooves or holes in the surface of the sealing resin sealing an electronic component and an electrode pad which are arranged on the substrate, wherein the grooves or the holes can communicate with the electrode pad. The method comprises following steps: 1, forming pre-grooves or pre-holes at groove or hole positions in the surface of the sealing resin, wherein the pre-grooves and pre-holes are formed through dies and do not communicate with the electrode pad; and 2, enabling the electrode pad to be exposed through the deepening of the pre-grooves or pre-holes formed in the first step.
Description
Technical field
The present invention relates to a kind of with the packaging body manufacture method of the electronic components such as resin-encapsulated semiconductor wafer, especially relate to shielding (shield) groove that a kind of electro permanent magnetic covers the wafer in packaging body formation method and at PoP (PackageonPackage; Stack) in technology for being electrically connected the formation method in the through hole hole of upper and lower packaging body.
Background technology
The electronic component such as (direction, face) configuring semiconductor wafer with in the packaging body of resin seal in the horizontal direction, in order to prevent the part be close from producing interference, and electro permanent magnetic must cover part in (shielding) packaging body.
About the general configuration example of carrying out the situation of ELECTROMAGNETIC OBSCURANT in packaging body, be described with reference to Fig. 1.In addition, each accompanying drawing of institute's reference in following specification, suitably changes for the purpose of simplifying the description and by the dimension scale in each portion, and it is not for correctly illustrating the shape of actual product.In Fig. 1, (a) is the profile of semiconductor package body 1, and in Fig. 1, (b) is the figure (vertical view) above of the semiconductor package body 1 in Fig. 1 shown in (a).In Fig. 1, (a) is A-A ' the line profile of (b) in Fig. 1.In the manufacturing step of semiconductor package body 1, first, the electrode terminal 21 that semiconductor wafer 20 is possessed, be connected with the distribution 11 on substrate 10 by projection (bump) 22, seal with the resin bed 30 be made up of thermosetting resin material (such as epoxy resin (epoxy)) this kind of.Then, resin bed 30 surface 301 (above) form the groove 31 of predetermined pattern and the grounding electrode 12 on substrate 10 exposed.Then, imbed shielding material 32 at established groove 31, impose film etc.By above step, the electro permanent magnetic interference between the part in semiconductor package body 1 can be covered.
In addition, along with the miniaturization of e-machine, the demand of the densification of semiconductor package body is increased, as the technology in response to demand so, provide the TMV (ThroughMoldVia utilizing the wafer lamination of PoP type to construct; The conducting of resin forming wafer via) goods of method.
With reference to Fig. 2, the embodiment that the wafer lamination of the PoP type of TMV method constructs is described.In Fig. 2, (a) represents downside packaging body 1a in PoP and upside packaging body 1b, and in Fig. 2, (b) represents the state connected by both laminations.Suitably omit diagram for the electronic component etc. be disposed on the packaging body 1b of upside, for the component with or similar functions identical with Fig. 1, add set character at the tail end of same-sign and distinguished.Resin-sealing step about semiconductor wafer 20a or various distributions etc. is identical with the embodiment shown in Fig. 1.In Fig. 2 (a), at downside packaging body 1a, replace groove 31 and be formed with the hole 31a (such as circular peristome) of the 13a of connecting electrode up and down arrived on substrate 10a.At upside packaging body 1b, the 13b of connecting electrode being up and down arranged at the back side (face on the downside of in this figure) studs with (mounting) bead 33.Then, the bead 33 on upper and lower connecting electrode 13b to be embedded in the mode of hole 31a, upside packaging body 1b is placed on the packaging body 1a of downside.If the position relationship confirming upper and lower packaging body 1b, 1a is applicable, then bead 33 dissolved by reflow (reflow) heating and fills up in the 31a of hole, becoming the connecting through hole 34 of connecting electrode up and down 13b, the 13a connecting upper and lower packaging body 1b, 1a.In addition, also can replace the bead 33 on upper and lower connecting electrode 13b, and in the 31a of hole filled conductive material.
Patent documentation 1: Japanese Unexamined Patent Publication 2009-26805 publication.
Summary of the invention
In the above-described embodiment, the formation in shielding groove or through hole hole, existing be generally undertaken by laser processing in the past.This processing gimmick by laser irradiation, resin material is dissolved and carries out, owing to not therefore extensively being used with the deterioration of cutting instrument abrasion etc.
But, laser handling ease is by the thickness deviation of packaging body or bending etc. impact, if the thickness of such as packaging body is less than assumed value, then have laser intensity excessive and cut off distribution, injure the not good situation such as substrate and produce, therefore have and must carry out accurate control and the problem that processing complicated etc.
As one of method avoiding problem so, in patent documentation 1, record following content: the confined space between base panel frame and mould is filled with a sealing in the coating method of resin, by the columnar protrusions of the distribution be crimped in base panel frame is located at mould, form the through hole of through hole.
But, in the method that patent documentation 1 is recorded, probably have when to have the situation of minim gap between the front end and distribution of columnar protrusions and do not form through hole, suppress to connect in order to avoid this situation and cause leaving the situations such as scar at distribution.
In order to correctly form the degree of depth of groove or hole, though best for grinding (milling) processing at present, the cutting instrument worn away must be changed continually.
The present invention completes in view of above-mentioned situation, its object is to: in the manufacturing step of electronic part package body, does not make under the distribution breakage on substrate or this substrate, sealing resin is formed shielding groove or through hole hole.
In order to solve the manufacture method of the electronic part package body of the present invention that above-mentioned problem completes, on the surface of sealing resin sealing electronic component and the electronic pads be disposed on substrate, formed and arrive the groove of this electronic pads or the method in hole, it is characterized in that, comprise:
A () supplying on the surface of sealing resin forms the position in this groove or hole, formed the 1st step of preparation groove or the prepared hole not arriving this electronic pads by die forming; And
B () is by making the processing that the degree of depth of preparation groove or the prepared hole formed in the 1st step increases and the 2nd step making this electronic pads expose.
In the manufacture method of electronic part package body of the present invention, the groove that electronic pads is exposed on the surface of the sealing resin of sealed electronic part and electronic pads or the forming position in hole, be formed with preparation groove or the prepared hole (the 1st step) of the degree of depth of the degree not arriving this electronic pads by die forming.Then, the processing increased by making the degree of depth of this preparation groove or prepared hole and this electronic pads is exposed, thus using this preparation groove or prepared hole as shielding groove or through hole with hole (the 2nd step).In the 2nd step, such as, by attrition process or laser processing, the degree of depth of this preparation groove or prepared hole is increased.
Herein, above-mentioned so-called " surface of sealing resin ", the face of the sealing resin of the opposition side, face mean in each electronic part package body, connecting with substrate (in the embodiment shown in Fig. 1 and Fig. 2 with 301, the symbol of 301a and 301b illustrate).In addition, comprise at above-mentioned " electronic pads " terminal and connected distribution electrode etc. that grounding electrode and electronic component possess.In addition, above-mentioned " sealing resin ", can comprise filler (the such as SiO preventing the packaging body produced because of resin shrinkage from bending height ratio
2on particle), be in this field known.
According to above-mentioned formation, in the groove of electronic pads arrived on substrate or the formation in hole, due to without the need to making the preparation groove that formed in the 1st step or prepared hole arrive electronic pads, therefore can't just like the situation of giving scar as patent documentation 1 because mould compressing electronic pads.Further, be machined to midway by utilizing die forming to complete in the 1st step in advance, and when utilizing attrition process to carry out the situation of the 2nd step, the consume of cutting instrument can be suppressed.In addition, when carrying out the situation of the 2nd step with laser processing, owing to can suppress to irradiate the intensity of laser according to the degree of depth of preparation groove or prepared hole, the not good situation of therefore substrate or distribution breakage is difficult to produce.Therefore, it is possible to do not make, under the distribution breakage on substrate or this substrate, sealing resin to form shielding groove or through hole hole.
1st step, preferably comprise following steps: use a mould, with another mould of protrusion pin of height having the degree of depth had lower than this groove or hole in cavity bottom, make to keep this another mould of mould and this of this substrate to abut and fastening mould from rear side, and potting resin material in the chamber.Thereby, it is possible to form preparation groove or prepared hole simply.
Above-mentioned so-called " mould " and " another mould " are such as patrix (or counterdie) and counterdie (or patrix), its each whether corresponding, not for changing interesting purport of the present invention.Such as, in the situation that above-mentioned " another mould " is patrix, above above-mentioned " bottom " becomes and to be positioned in vertical line, in the present invention, the term of so-called bottom not and bottom synonym.
In addition, in above-mentioned " bottom ", also comprise the head top surface with the knock pin (ejectorpin) of the bottom surface same level of chamber etc.About this " bottom ", " head " and " end face " term also as described above, not with definition of getting off in vertical line.
In above-mentioned 1st step, also form this preparation groove or prepared hole by being arranged on this protrusion pin of the head top surface of the knock pin can given prominence to from the bottom surface of this chamber.Thus, make to take out the transfiguration of electronic part package body from chamber easy.
According to the manufacture method of electronic part package body of the present invention, can not make, under the distribution breakage on substrate or this substrate, sealing resin to form shielding groove or through hole hole.
Accompanying drawing explanation
Fig. 1 is profile (a) and the vertical view (b) of the structure example of the semiconductor package body being formed with general shielding groove.
Fig. 2 is in the embodiment constructed at the wafer lamination of the PoP type of TMV method, the profile (b) of the profile (a) studding with the state of bead at downside packaging body and the state being connected with upside packaging body at downside packaging body lamination.
Fig. 3 is the 1st stage (a) of the 1st step of the manufacture method of the electronic part package body of an embodiment of the present invention, the 2nd stage (b), the 3rd stage (c) and the 4th stage (d).
Fig. 4 is the stereogram (a) having the knock pin of protrusion pin in same embodiment and variant embodiment (b) thereof.
Fig. 5 is the profile (a) of the prepared hole formed in same embodiment and make the degree of depth of this prepared hole increase the profile (b) in the hole formed by processing.
Fig. 6 is the 1st stage (a) in another embodiment of the manufacture method of electronic part package body, the 2nd stage (b), the 3rd stage (c) and the 4th stage (d).
Fig. 7 is the 1st stage (a) in another embodiment again of the manufacture method of electronic part package body, the 2nd stage (b) and the 3rd stage (c).
Fig. 8 is configured with the metallic plate of the state of multiple single substrate and the vertical view (a) of adhesive sheet and profile (b) in hollow region.
Fig. 9 is the 1st stage (a) in an embodiment of the manufacture method of the electronic part package body sealing multiple single substrate, the 2nd stage (b), the 3rd stage (c) and the 4th stage (d).
Figure 10 is the 1st stage (a) in another embodiment again of the manufacture method of the electronic part package body sealing multiple single substrate, the 2nd stage (b) and the 3rd stage (c).
Symbol description
1,1a, 1b: semiconductor package body
10,10a, 10b: substrate
11,11a, 11b: distribution
12: grounding electrode
13a, 13b: connecting electrode up and down
20,20a: semiconductor wafer
21,21a: electrode terminal
22,22a: projection
30,30a, 30b: resin bed
31: groove
31a: hole
32: shielding material
33: bead
34: connecting through hole
301,301a, 301b: the surface of resin bed
40,40b, 40c, 40d, 40e: patrix
41,41b, 41d, 51b: maintaining part
50,50b, 50d, 500,500a: counterdie
51,41b, 41d: chamber
52,
42d: side sluice gate
53,43b, 53c, 43d, 53e: protrusion pin
54,54a, 44b, 44d: knock pin
55,55a, 45b, 45d: head
56,46b, 56c, 46d, 56e: flake hole portion
57,47b, 57c, 47d, 57e: through hole
58,58a: flange part
501,501a: chamber side surface member
502,502a: chamber floor members
503,503a: base plate
504,504a, 505,505a: elastic component
61,61b, 61c: substrate
61d, 61e: single substrate
62,62b, 62c, 62d, 62e: semiconductor wafer
63,63b, 63c, 63d, 63e: connecting electrode up and down
64,64b, 64c, 64d, 64e: resin material
65,65b, 65c, 65d, 65e: resin bed
66,66b, 66d: sluice gate portion
67: prepared hole
68,68b, 68c, 68d, 68e: hole
651,651b, 651c, 651d, 651e: the surface of resin bed
652: cull layer
700,700a: mold release film
800: through hole
801: metal framework
802: adhesive sheet
Embodiment
Below, for the manufacture method of the electronic part package body of an embodiment of the present invention, be described with reference to Fig. 3 ~ Fig. 5.In following record, to component that is identical at the accompanying drawing had with more first illustrate or similar functions, suitably add set character at tail end that is identical or simileys and distinguished, and the description thereof will be omitted.In addition, though be described, as following, about the formation also applicable similar method of shielding groove for the formation method in the through hole hole adopted in the wafer lamination structure of the PoP type of TMV method in the present embodiment.
In figure 3, the profile in each stage for illustration of the 1st step of the present invention is represented.In addition, about for by semiconductor wafer 62, electrode terminal, distribution and the projection be set on substrate 61 then omits diagram.
First, as shown in (a) in Fig. 3, in advance set (more than the fusing point of resin material 64) temperature (also carrying out the heating in advance of mould in following each embodiment) is heated to the patrix 40 having the maintaining part 41 that can remain on the state (that is, be set in the state that semiconductor wafer on substrate 61 62 and upper and lower connecting electrode 63 become following side) having made substrate about 61 reverse and the counterdie 50 that has a chamber 51.Then, counterdie 50 is made to increase (the black thick direction of arrow in figure) relative to fixing patrix 40, and as abutted as (b) in Fig. 3, and fastening mould.Then, from the side sluice gate (sidegate) 52 being located at counterdie 50, resin material 64 is filled in chamber 51.In addition, the mold release film that when also can utilize for preventing the demoulding, resin material 64 is attached to counterdie 50 is coated to chamber 51, but omits diagram.
In the bottom of chamber 51, in the position with connecting electrode up and down 63 subtend on substrate 61, multiple protrusion pin 53 with intended height is set.Above-mentioned intended height, different because of the degree of depth of chamber 51 or the thickness of upper and lower connecting electrode 63 etc., but be preferably set as shown in (b) in Fig. 3 make upper and lower mould 40,50 abut and fastening mould time, form the height of the gap degree of such as 100 ~ 300 μm relative to relative connecting electrode up and down 63.
In addition, the through hole 57 with (spotface) portion 56, flake hole is set in the bottom of chamber 51, and before the 1st step, knock pin 54 is inserted through through hole 57 by upper direction from figure, and the head 55 of knock pin 54 is contained in flake hole portion 56.The degree of depth in flake hole portion 56 or the height of head 55 and this kind of shape, be preferably: with when head 55 being contained in flake hole portion 56, the becoming the mode of same level with the bottom surface of chamber 51 and suitably determine above of head 55.After hardening required given time through resin material 64, as in Fig. 3 (c), under the state making substrate 61 remain on the maintaining part 41 of patrix 40, counterdie 50 is declined (in figure white thick the direction of arrow) and to the power of the black thin direction of arrow in knock pin 54 applying figure to carry out die sinking maintaining.Once make counterdie 50 decline further from this state, then by the surface 651 at resin bed 65 (being equivalent to sealing resin of the present invention), above the next-door neighbour of upper and lower connecting electrode 63 (in Fig. 3 for downside) be formed with the packaging structure body of prepared hole 67, under the state kept by maintaining part 41, take out (in Fig. 3 (d)).Can remove by arbitrary steps about the sluice gate portion 66 from side sluice gate 52 demoulding.
In addition, in the present embodiment, also the head 55 of knock pin 54 is provided with protrusion pin 53.The amplification stereogram of knock pin 54 is represented in Fig. 4 (a).Protrusion pin 53, be preferably: in the easy mode from resin bed 65 demoulding, have such as about 5 degree extract gradient (tapering).In addition, the upper shape of head 55 is not limited to the circle shown in this accompanying drawing, head 55a as shown in Fig. 4 (b), also can be the shape by being set as round part shortcoming or oval or other polygonals, and prevent the turn of knock pin 54a from causing the position of protrusion pin 53 to offset.
The profile of the prepared hole 67 formed by the protrusion pin 53 shown in the 1st step shown in Fig. 3 and Fig. 4 is represented in Fig. 5 (a).In addition, in the figure, in figure is put upside down with Fig. 3 up and down.Prepared hole 67, its most deep does not arrive upper and lower connecting electrode 63, and point at this moment, upper and lower connecting electrode 63 becomes state that is coating by cull layer 652, protection.
By imposing attrition process or the processing of low intensive laser to this prepared hole 67, remove this prepared hole 67 bottom and up and down connecting electrode 63 above between cull layer 652, make upper and lower connecting electrode 63 expose as Suo Shi (b) in Fig. 5.By the 2nd step, form the hole 68 playing identical function with the hole 31a shown in Fig. 2.That is when the degree of depth of prepared hole 67 being set to D1, the degree of depth in hole 68 being set to D2, the thickness of cull layer 652 is set to T (being preferably 100 ~ 300 μm), T=D2-D1 sets up.
Attrition process, due to the cutting depth of short transverse (above-below direction in Fig. 5) correctly can be controlled, therefore be difficult to make upper and lower connecting electrode 63 or substrate 61 breakage or do not have laser to add remaining of the filler grain produced man-hour, be therefore particularly suitable as the processing method adopted in the 2nd step.In addition, according to the present embodiment, due to the less consume that therefore can suppress cutting instrument of the thickness carrying out the cull layer 652 cut.
In addition, during the situation using laser to process in the 2nd step, the thickness also due to the cull layer 652 of melting is less therefore, it is possible to suppress laser intensity, and can reduce the breakage of upper and lower connecting electrode 63 or substrate 61.
Therefore, by the described above 1st and the 2nd step, can not make, under upper and lower connecting electrode 63 or substrate 61 breakage, to form the hole 68 of connecting through hole on the surface 651 of the resin bed 65 of semiconductor package body.
In addition, the composition of 13a, the 13b of connecting electrode up and down and 63 shown in Fig. 2, Fig. 3 and Fig. 5 is identical with general distribution electrode, and this kind of title is for the ease of presentation function feature.
[variant embodiment]
In above-mentioned embodiment, because knock pin 54 has the head 55 in the large footpath of more bar-shaped core, though be therefore provided with flake hole portion 56 in the bottom of chamber 51, head 55 also can footpath same with the core of knock pin 54.That is, when knock pin 54 entirety is the situation of bar-shaped pin without the need to flake hole portion 56, and knock pin 54 also can be made from Figure below to being inserted through through hole 57.In this situation, as long as arrange the supporting mass preventing from falling in the bottom of knock pin 54.
In addition, also by the height of the protrusion pin 53 shown in Fig. 3 and Fig. 4, can change to and arrive relative connecting electrode up and down 63, and only form hole 68 with die forming.Or, also only can form hole 68 with attrition process.
[forming the formation embodiment of the situation of the groove of shielding]
In above-mentioned embodiment, though the method for the hole forming connecting through hole is illustrated, but when the channel shaped of shielding is formed in the situation of resin bed, as long as in the 1st step, the projection of the wire of respective grooves pattern is located at the bottom of chamber 51.About the 2nd step, be identical with above-mentioned embodiment.
As the example of application further, also the corresponding Wiring pattern of connecting electrode up and down can be formed with but not under the prerequisite of the Wiring pattern of grounding electrode, optional position on this preparation groove imposes attrition process or laser is processed and electrode is exposed, and becomes the hole of connecting through hole.
In addition, laser also can be utilized to be processed to form prepared hole or preparation groove, then to impose attrition process.
In above-mentioned, be mentioned to the height also changing protrusion pin 53 also only forms hole 68 content with die forming.Below record its specific embodiment.
[only forming the situation in hole with die forming: formed embodiment 1-1]
With reference to Fig. 6, for being only described with an embodiment of the formation of the situation in die forming formation hole.Though mould is put upside down with Fig. 3 up and down in figure 6, such as patrix 40b and the function of counterdie 50b in forming step are equal, keep substrate 61b with which mould upper and lower.But protrusion pin 43b must be located at the mould relative with keeping the mould of substrate 61b.
In this formation embodiment, under the state keeping substrate 61b with the maintaining part 51b of counterdie 50b (Fig. 6 (a)) make counterdie 50b increase (the black thick direction of arrow in figure) and patrix 40b is abutted with counterdie 50b and fastening mould time, the front end of protrusion pin 43b abuts (Fig. 6 (b)) with upper and lower connecting electrode 63b.That is, the height of protrusion pin 43b is equal with the distance of end face to upper and lower connecting electrode 63b of the chamber 41b in the state from fastening mould.Therefore, after resin material 64b hardens, as Fig. 6 (c), make counterdie 50b decline (in figure white thick the direction of arrow) maintaining under the state making substrate 61b remain on the maintaining part 51b of counterdie 50b, and to the power of the white thin direction of arrow in knock pin 44b applying figure to carry out die sinking, once make counterdie 50b decline and make resin bed 65b (being equivalent to sealing resin of the present invention) from the patrix 40b demoulding (Fig. 6 (d)) further, then form at the surperficial 651b of resin bed 65b the hole 68b arriving upper and lower connecting electrode 63b.
According to this formation embodiment, by making protrusion pin 43b be connected to multiple upper and lower connecting electrode 63b respectively, and substrate 61b is fixed on the bottom surface of maintaining part 51b.Therefore, it is possible to suppress the thermal flexure of substrate 61b.In addition, as above by the height determining protrusion pin 43b, the workload of the formation of hole 68b can be suppressed.
[only forming the situation in hole with die forming: formed embodiment 1-2]
With reference to Fig. 7, formed embodiment for another of situation only forming hole with die forming and be described.Though be illustrated for the example being formed resin bed 65 and 65b by transfer moulding shaping (transfermolding) in Fig. 3 and Fig. 6, be then form resin bed 65c by compression molding in this formation embodiment.Compression molding mould in this formation embodiment is made up of patrix 40c and counterdie 500.Patrix 40c is provided with not shown substrate configuration part, and substrate 61c is fixed on this substrate configuration part in the mode of semiconductor wafer 62c and counterdie 500 subtend.
At counterdie 500, include chamber side surface member 501, chamber floor members 502 and for gathering this kind of and base plate 503 making it move up and down.At chamber floor members 502, arrange the through hole 57c with flake hole portion 56c, and at this through hole 57c, insert the protrusion pin 53c with flange part 58 from Figure below, flange part 58 is contained in flake hole portion 56c.Through hole 57c, the position of the 63c of the connecting electrode up and down subtend on break-through and substrate 61c.Chamber side surface member 501 and protrusion pin 53c and base plate 503, the elastic component 504 and 505 realized by helical spring etc. and connecting.
First, as shown in (a) in Fig. 7, at the resin material 64c of the counterdie chamber be made up of chamber side surface member 501 and chamber floor members 502 (symbol omission) supply given amount, counterdie 500 is made to rise (in figure the black direction of arrow).In addition, also before the supply of resin material 64c, fixing mold release film 700 can be adsorbed in the face and periphery thereof forming above-mentioned counterdie chamber as shown in the drawing.Thus, make the demoulding transfiguration of resin bed 65c easy.
Once make counterdie 500 rise so, then first protrusion pin 53c abuts with upper and lower connecting electrode 63c and crimps, then chamber side surface member 501 above abut and fastening mould with the circumference of the substrate 61c being held in patrix 40c.Then, once make base plate 503 rise, then semiconductor wafer 62c is immersed in resin material 64c, chamber floor members 502, carries out compression molding (Fig. 7 (b)) by pressurizeing to resin material 64c.Now, because protrusion pin 53c is crimped by the elastic force of elastic component 505 with the bearing surface of upper and lower connecting electrode 63c, therefore to prevent (because of heating melting) resin material 64c from immersing toward this bearing surface.After resin material 64c hardens, once make counterdie 500 decline (in figure the white direction of arrow), then can obtain the semiconductor package body (Fig. 7 (c)) being formed porose 68c by compression molding at the surperficial 651c of resin bed 65c.In addition, chamber side surface member 501 and protrusion pin 53c, by the elastic force of elastic component 504 and 505, and return to original position relative to base plate 503.
According to this formation, the effect same with above-mentioned configuration example 1-1 can be obtained by compression molding.
In addition, also can before the abutting of protrusion pin 53c and upper and lower connecting electrode 63c, abutting with the circumference of substrate 61c above of chamber side surface member 501, it is not sequentially limited.In addition, as long as when protrusion pin 53c is crimped on upper and lower connecting electrode 63c, in the mode that upper and lower connecting electrode 63c is not damaged, the elastic force of elastic component 505 is suitably regulated.
[carrying out the situation sealed as a packaging body using multiple single substrate: formed embodiment 2-1]
Be configured among the multiple electronic components on a substrate, sometimes also there is the situation including defective products.Produce at the defective products because of the part as so and situation that yield is reduced, before being employed in resin-sealing step, substrate cutting become monolithic and differentiate non-defective unit and defective products, only the single substrate of non-defective unit being carried out to the gimmick of resin seal.As the last stage of the resin-sealing step in the gimmick as so, such as shown in Fig. 8, adhesive sheet 802 is pasted from the back side of metal framework 801, the adhesion coating being exposed to the adhesive sheet 802 in above-mentioned through hole 800 loads single substrate 61d, wherein, this metal framework 801, has the rectangular-shaped through hole 800 being formed and can configure the hollow region of multiple single substrate 61d in the horizontal direction.In Fig. 8, (b) is B-B ' the line profile of (a) in Fig. 8.The metal framework 801 being fixed with multiple single substrate 61d by so adhering and adhesive sheet 802 are set in finishing die to carry out resin seal.
But, because single substrate 61d adhesion is fixed on adhesive sheet 802, therefore sometimes have the situation producing the position skew in horizontal plane because of resin flows when being shaped.Position skew as like this is found in transfer moulding shaping obvious especially, and probably has when being cut off with regard to each packaging body by goods, and single substrate 61d sealing being fixed on to the position different from the position determined in advance misses the anxiety cut off.In addition, when forming prepared hole or hole by the protrusion pin on the chamber bottom surface of mould at resin bed, the position also had because of single substrate 61d offsets, and cannot form the problem of prepared hole or hole and so on above the next-door neighbour of upper and lower connecting electrode.
Therefore, present inventors have proposed manufacturing process as shown in Figure 9.First, as under the state that (a) in Fig. 9 maintains metal framework 801 and adhesive sheet 802 at the maintaining part 51d of counterdie 50d, counterdie 50d is made to rise (the black thick direction of arrow in figure) and patrix 40d is abutted and fastening mould with counterdie 50d.Thus, as shown in (b) in Fig. 9, the front end of protrusion pin 43d and abutting above of upper and lower connecting electrode 63d.In this condition, at chamber 41d (and in through hole 800 of metal framework 801 in counterdie 50d side) potting resin material 64d, after this resin material 64d hardens, as 9 (c) in figure, under the maintaining part 51d of counterdie 50d maintains the state maintaining metal framework 801 and adhesive sheet 802, make counterdie 50d decline (the white thick direction of arrow in figure), and to the power of the white thin direction of arrow in knock pin 44d applying figure to carry out die sinking, once make counterdie 50d decline further and make resin bed 65d (being equivalent to sealing resin of the present invention) from the patrix 40d demoulding (Fig. 9 (d)), then form at the surperficial 651d of resin bed 65d the hole 68d arriving upper and lower connecting electrode 63d.
According to this formation, due to before the filling of resin material 64d, the front end of protrusion pin 43d abuts with upper and lower connecting electrode 63d, and therefore single substrate 61d and adhesive sheet 802 are clamped by protrusion pin 43d and maintaining part 51d, and the position of the single substrate 61d on adhesive sheet 802 is fixed.Therefore, it is possible to the position skew of the single substrate 61d on adhesive sheet 802 preventing from resulting from resin flows to cause.In addition, in the same manner as above-mentioned configuration example 1-1 and 1-2, also there is the effect suppressing thermal flexure.
[carrying out the situation sealed as a packaging body using multiple single substrate: formed embodiment 2-2]
In the present embodiment, the applicable formation being similar to above-mentioned configuration example 1-2.Then suitably omit the description about the part same with above-mentioned configuration example 1-2.As shown in (a) in Figure 10, first, use the compression molding mould be made up of patrix 40e and counterdie 500a, and the metal framework 801 being fixed with multiple single substrate 61e by adhering and adhesive sheet 802 are fixed on the not shown configuration part that patrix 40e possesses.Then, chamber side surface member 501a, protrusion pin 53e is made to abut with metal framework 801, up and down connecting electrode 63e respectively.Point at this moment, single substrate 61e and adhesive sheet 802 are clamped by the configuration part of protrusion pin 53e and patrix 40e, and the position of the single substrate 61e on adhesive sheet 802 is fixed.Further, in the state in Fig. 10 shown in (b), by the elastic force of elastic component 505a, and increase the clamp pressure to single substrate 61e and adhesive sheet 802.
According to this formation embodiment, the effect same with above-mentioned formation embodiment 2-1 can be obtained by compression molding.
In addition, above-mentioned embodiment and Application Example are the embodiments in the present invention, even if the change suitably carried out in the scope of intention of the present invention, amendment, add, combination, be certainly also contained in the application's right.
Claims (3)
1. a manufacture method for electronic part package body is on the surface of sealing resin sealing electronic component and the electronic pads be disposed on substrate, forms the groove or hole that arrive this electronic pads, it is characterized in that, comprise:
Supplying a) on the surface of sealing resin forms the position in this groove or hole, is formed the 1st step of preparation groove or the prepared hole not arriving this electronic pads by die forming; And
B) by making the processing that the degree of depth of preparation groove or the prepared hole formed in the 1st step increases and the 2nd step making this electronic pads expose.
2. the manufacture method of electronic part package body according to claim 1, wherein, the 1st step, comprises following steps:
Use a mould, with another mould of protrusion pin of height having the degree of depth had lower than this groove or hole in cavity bottom, make to keep this another mould of mould and this of this substrate to abut and fastening mould from rear side, and potting resin material in the chamber.
3. the manufacture method of electronic part package body according to claim 2, wherein, in the 1st step, forms this preparation groove or prepared hole by being arranged on this protrusion pin of the head top surface of the knock pin can given prominence to from the bottom surface of this chamber.
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| TWI729453B (en) * | 2019-08-14 | 2021-06-01 | 華暉興業有限公司 | Structure improvement of power module |
| CN112992836B (en) * | 2019-12-12 | 2023-01-17 | 珠海格力电器股份有限公司 | Copper bridge double-sided heat dissipation chip and preparation method thereof |
| CN112017976B (en) * | 2020-11-02 | 2021-02-05 | 甬矽电子(宁波)股份有限公司 | Photoelectric sensor packaging structure manufacturing method and photoelectric sensor packaging structure |
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| JP2002124527A (en) * | 2000-10-16 | 2002-04-26 | Sony Corp | Method for manufacturing chip electronic component and method for manufacturing dummy wafer used therefor |
| JP3560585B2 (en) * | 2001-12-14 | 2004-09-02 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| US6900531B2 (en) * | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
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| KR20160010305A (en) | 2016-01-27 |
| KR101724199B1 (en) | 2017-04-06 |
| TWI644372B (en) | 2018-12-11 |
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| CN105321831B (en) | 2018-07-06 |
| JP2016025212A (en) | 2016-02-08 |
| CN108962768B (en) | 2022-04-29 |
| CN108962768A (en) | 2018-12-07 |
| JP6242763B2 (en) | 2017-12-06 |
| TW201719778A (en) | 2017-06-01 |
| KR20170040150A (en) | 2017-04-12 |
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| TW201604976A (en) | 2016-02-01 |
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