CN105316642B - Silicon chip heating unit in sputtering technology - Google Patents
Silicon chip heating unit in sputtering technology Download PDFInfo
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- CN105316642B CN105316642B CN201510806307.5A CN201510806307A CN105316642B CN 105316642 B CN105316642 B CN 105316642B CN 201510806307 A CN201510806307 A CN 201510806307A CN 105316642 B CN105316642 B CN 105316642B
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- holding tray
- silicon chip
- end plate
- bottom face
- heating
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Abstract
The invention discloses the silicon chip heating units in a kind of sputtering technology, include the holding tray for placing silicon chip；The bottom face of the holding tray is provided with multiple bottoming holes, and bottoming hole is connected to the heating pipe being arranged on outside holding tray, and heating pipe is connected with heating source；The bottom face of the holding tray uses arcuate structure, it is bent towards heating pipe, the bottom face of holding tray is provided with the placement end plate for putting silicon chip, and the bottom face for placing end plate along holding tray circularizes distribution, and its residing height is higher than the extreme lower position of holding tray；Multiple bottoming holes are uniformly distributed between placement end plate and the extreme lower position of holding tray；Using the silicon chip heating unit in the sputtering technology of above-mentioned technical proposal, cause each position of silicon chip substrate can be evenly heated, the phenomenon that so as to cause subregion covered when avoiding silicon chip contact because with holding tray.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, the silicon chip heating unit in especially a kind of sputtering technology.
Background technology
Semiconductor production silicon chip need to heat silicon chip substrate in process is sputtered.Existing heating
Silicon chip often using back of the body pressure spray process, i.e., is positioned over inside container by technique, is added by the bottoming hole of container bottom to silicon chip conveying
Hot gas, so that silicon chip substrate is heated.However, in above-mentioned heating process, since silicon chip is bonded with container bottom, heat
The contact range of gas and silicon chip is restricted, and causes silicon chip substrate that can not be evenly heated.
Invention content
The technical problem to be solved in the present invention is to provide the silicon chip heating units in a kind of sputtering technology, may be such that silicon chip
Heating spend and be improved.
In order to solve the above technical problems, the present invention relates to the silicon chip heating unit in a kind of sputtering technology, including useful
In the holding tray for placing silicon chip；The bottom face of the holding tray is provided with multiple bottoming holes, and bottoming hole, which is connected to, is arranged on placement
Heating pipe outside disk, heating pipe are connected with heating source；The bottom face of the holding tray uses arcuate structure, and direction adds
Hot channel is bent, and the bottom face of holding tray is provided with the placement end plate for putting silicon chip, places end plate along holding tray
Bottom face circularizes distribution, and its residing height is higher than the extreme lower position of holding tray；Multiple bottoming holes are placing end plate with placing
It is uniformly distributed between the extreme lower position of disk.
As a modification of the present invention, multiple auxiliary bottoming holes are provided among the placement end plate, multiple auxiliary add
Hot hole is uniformly distributed along the extending direction for placing end plate.Using above-mentioned design, silicon chip can be covered by assisting bottoming hole
Region on holding tray is heated, so that the heating uniformity of silicon chip substrate is significantly improved.
As a modification of the present invention, it is described place end plate include the connecting pin that is connected on holding tray and
The placement end being in contact with silicon chip, the height for placing end are higher than the height of connecting pin.It, can be by inclining using above-mentioned design
The placement end plate tiltedly set causes the edge of silicon chip to keep vacant state, consequently facilitating staff or corresponding component carry out it
Crawl.
Using the silicon chip heating unit in the sputtering technology of above-mentioned technical proposal, the arc of holding tray bottom face can be passed through
Structure and the design for placing end plate so that when silicon chip is positioned among holding tray, silicon is caused by the support for placing end plate
Certain space is formed between the substrate of piece and holding tray bottom face, is put so that being delivered to via heating pipe with bottoming hole
Putting the heat medium among disk can be uniformly distributed in above-mentioned space, so each position of silicon chip substrate is carried out uniformly plus
Heat, the phenomenon that avoiding causing subregion covered during silicon chip contact because with holding tray.
Description of the drawings
Fig. 1 is schematic diagram of the present invention；
Reference numerals list：
1-holding tray, 2-bottoming hole, 3-heating pipe, 4-place end plate, 41-connecting pin, 42-place end, 5-
Assist bottoming hole, 6-heating source.
Specific embodiment
With reference to embodiment, the present invention is furture elucidated, it should be understood that following specific embodiments are only used for
It is bright the present invention rather than limit the scope of the invention.
Embodiment 1
Silicon chip heating unit in a kind of sputtering technology as shown in Figure 1, includes the holding tray for placing silicon chip
1；The bottom face of the holding tray 1 is provided with multiple bottoming holes 2, and bottoming hole 2 is connected to the heating tube being arranged on outside holding tray 1
Road 3, heating pipe 3 are connected with heating source 6；The bottom face of the holding tray 1 use arcuate structure, towards heating pipe 3 into
Row bending, the bottom face of holding tray 1 are provided with the placement end plate 4 for putting silicon chip, place bottom end of the end plate 4 along holding tray 1
Face circularizes distribution, and its residing height is higher than the extreme lower position of holding tray 1；Multiple bottoming holes 2 are placing end plate 4 and holding tray
It is uniformly distributed between 1 extreme lower position.
As a modification of the present invention, multiple auxiliary bottoming holes 5, multiple auxiliary are provided among the placement end plate 4
Bottoming hole 5 is uniformly distributed along the extending direction for placing end plate 4.It, can be by assisting bottoming hole with to silicon chip using above-mentioned design
It is covered in the region on holding tray to be heated, so that the heating uniformity of silicon chip substrate is significantly improved.
Using the silicon chip heating unit in the sputtering technology of above-mentioned technical proposal, the arc of holding tray bottom face can be passed through
Structure and the design for placing end plate so that when silicon chip is positioned among holding tray, silicon is caused by the support for placing end plate
Certain space is formed between the substrate of piece and holding tray bottom face, is put so that being delivered to via heating pipe with bottoming hole
Putting the heat medium among disk can be uniformly distributed in above-mentioned space, so each position of silicon chip substrate is carried out uniformly plus
Heat, the phenomenon that avoiding causing subregion covered during silicon chip contact because with holding tray.
Embodiment 2
As a modification of the present invention, the placement end plate 4 includes the connecting pin 41 being connected on holding tray 1,
And the placement end 42 being in contact with silicon chip, the height for placing end 42 are higher than the height of connecting pin 41.Using above-mentioned design,
It can keep vacant state by the edge of placement end plate silicon chip being obliquely installed, consequently facilitating staff or corresponding portion
Part captures it.
The remaining features and advantages of the present embodiment are same as Example 1.
Claims (3)
1. the silicon chip heating unit in a kind of sputtering technology, includes the holding tray for placing silicon chip；It is characterized in that, institute
The bottom face for stating holding tray is provided with multiple bottoming holes, and bottoming hole is connected to the heating pipe being arranged on outside holding tray, heating
Pipeline is connected with heating source；The bottom face of the holding tray uses arcuate structure, is bent towards heating pipe, holding tray
Bottom face be provided with placement end plate for putting silicon chip, the bottom face for placing end plate along holding tray circularizes distribution, and its
Residing height is higher than the extreme lower position of holding tray；Multiple bottoming holes uniformly divide between placement end plate and the extreme lower position of holding tray
Cloth.
2. the silicon chip heating unit in sputtering technology described in accordance with the claim 1, which is characterized in that among the placement end plate
Multiple auxiliary bottoming holes are provided with, multiple auxiliary bottoming holes are uniformly distributed along the extending direction for placing end plate.
3. the silicon chip heating unit in sputtering technology described in accordance with the claim 2, which is characterized in that the placement end plate includes
The placement end for having the connecting pin being connected on holding tray and being in contact with silicon chip, the height for placing end is higher than connection
The height at end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806307.5A CN105316642B (en) | 2015-11-20 | 2015-11-20 | Silicon chip heating unit in sputtering technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806307.5A CN105316642B (en) | 2015-11-20 | 2015-11-20 | Silicon chip heating unit in sputtering technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105316642A CN105316642A (en) | 2016-02-10 |
| CN105316642B true CN105316642B (en) | 2018-06-12 |
Family
ID=55244943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510806307.5A Active CN105316642B (en) | 2015-11-20 | 2015-11-20 | Silicon chip heating unit in sputtering technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105316642B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6414277B1 (en) * | 2000-01-21 | 2002-07-02 | Shinku Giken Co., Ltd. | Ultra-high-temperature heat treatment apparatus |
| CN2923739Y (en) * | 2006-03-15 | 2007-07-18 | 联华电子股份有限公司 | Back board heating device |
| CN102543662A (en) * | 2010-12-30 | 2012-07-04 | 上海微电子装备有限公司 | Hot disc and silicon chip heating system applying same |
| CN104681402A (en) * | 2015-03-16 | 2015-06-03 | 京东方科技集团股份有限公司 | Substrate heating device and substrate heating method |
| CN205188425U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Silicon chip heating device in sputtering technology |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6017906B2 (en) * | 2011-10-19 | 2016-11-02 | 株式会社Kelk | Temperature control device |
-
2015
- 2015-11-20 CN CN201510806307.5A patent/CN105316642B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6414277B1 (en) * | 2000-01-21 | 2002-07-02 | Shinku Giken Co., Ltd. | Ultra-high-temperature heat treatment apparatus |
| CN2923739Y (en) * | 2006-03-15 | 2007-07-18 | 联华电子股份有限公司 | Back board heating device |
| CN102543662A (en) * | 2010-12-30 | 2012-07-04 | 上海微电子装备有限公司 | Hot disc and silicon chip heating system applying same |
| CN104681402A (en) * | 2015-03-16 | 2015-06-03 | 京东方科技集团股份有限公司 | Substrate heating device and substrate heating method |
| CN205188425U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Silicon chip heating device in sputtering technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105316642A (en) | 2016-02-10 |
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