CN102543662A - Hot disc and silicon chip heating system applying same - Google Patents

Hot disc and silicon chip heating system applying same Download PDF

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Publication number
CN102543662A
CN102543662A CN2010106183741A CN201010618374A CN102543662A CN 102543662 A CN102543662 A CN 102543662A CN 2010106183741 A CN2010106183741 A CN 2010106183741A CN 201010618374 A CN201010618374 A CN 201010618374A CN 102543662 A CN102543662 A CN 102543662A
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China
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silicon chip
heating system
air
chip heating
heat dish
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CN2010106183741A
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CN102543662B (en
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闵金华
张俊
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Abstract

The invention provides a hot disc and a silicon chip heating system applying the same. The hot disc is arranged in an accommodating body, and is connected with an exhaust fan and an air inlet machine respectively; the hot disc is provided with multiple groups of uniformly-distributed heating regions; an air outlet hole and an air inlet hole are formed in each heating region; the air outlet hole is connected to the exhaust fan; the air inlet hole is formed around the air outlet hole, and is connected to the air inlet machine; and the air inlet machine is used for supplying hot air. A silicon chip can be suspended above the hot disc without being directly contacted with the hot disc during heating, so that the back face of the silicon chip is prevented from being polluted by a heated disc, and the problem of explosion of the silicon chip is solved.

Description

Its silicon chip heating system is coiled and used to heat
Technical field
Its silicon chip heating system is particularly coiled and use to the present invention relevant for a kind of silicon chip heating technique relevant for a kind of heat.
Background technology
In the figure transfer technology that semiconductor chip is produced, the coating of photoresist, soft baking and back baking are very important steps.Soft baking is that the solvent evaporation in the photoresist that coats is fallen, with adhesion, uniformity, the etch resistance that improves it, thus the control that improves live width.At present, the photoresist used of 193nm and 248nm mask aligner all is that optics amplifies photoresist.Optics can produce light acid (H+) after amplifying resist exposure, and baking then can be diffused into the H+ that produces the inside of photoresist, makes the photoresist of exposed portion become the material of alkali soluble.Usually, the length of back baking time and uniformity can have a strong impact on the size and the uniformity of live width.In the process of baking and banking up with earth; If it is fast to be in the solvent evaporates speed on the photoresist surface solvent evaporates speed more inner than photoresist, when the photoresist on surface has cured, if proceed to bake and bank up with earth again; It is coarse that the photoresist surface will become, and produces so-called " sandwich " consequence.
For this reason, last century the eighties, the hot plate type curing range arises at the historic moment, to accomplish the technology of baking and banking up with earth behind the silicon chip gluing.The curing range of this form is to adopt a slice to connect the mode of curing separately of a slice.From the viewpoint of calorifics principle, it is through the contact surface of silicon chip with heat dish, and to the silicon chip back side, the organic solvent in the photoresist is then moved and leaves photoresist to the surface by interior with thermal energy conduction.
Yet the hot plate type curing range is all contact, through regular meeting because the silicon slice placed seated position is not good or the silicon chip back side or heat dish on particle arranged and produce the silicon chip uneven problem of being heated, thereby cause live width inhomogeneous.And, if some silicon chip back side is messy, also can pollute the heat dish, and then cause follow-up other silicon chip back sides of baking and banking up with earth technology also can receive the pollution of heat dish.Especially when advanced packaging technology was used widely in recent years, this process requirements glue was thick very thick, have up to 150um, the soft baking time generally needs tens minutes.If adopt the mode of above-mentioned direct contact, can cause the explosion of some special silicon chip such as lithium niobate substrate when serious.
Person as shown in Figure 1 is a kind of hot plate type front drying device, and it comprises that heat dish body 4, heater 11a, temperature-detecting device 9, body of heater, the push rod 3 with three vertical shanks, driving push rod 3 are carrying elevating mechanism (comprising screw mandrel 5, motor 7 and encoder 6) and the servo-driver 8 that silicon chip 2 moves up and down.Shown in Figure 1 this kind of hot plate type front drying device is characterized in strict length and the heating rate of controlling temperature-time of ability, can obtain good glued membrane characteristic, thereby can obtain good lithographic results.Yet it has also brought new problem.Along with improving constantly of technology, it is increasing that die size becomes, and main flow is 12 cun a silicon chip now, can develop into 18 cun soon.If adopt hot plate type front drying device shown in Figure 1,, can cause crooked deformation during silicon chip 12 heating, and then can influence the flatness of silicon chip 12 and photoresist because silicon chip 12 edges can not get supporting.In addition, have difference will cause the inclination of silicon chip 12 between three push rods 3 highly slightly, cause be heated inhomogeneous.And because push rod 3 directly contacts with silicon chip 12, the part of contact also can be heated inhomogeneous, thereby finally influences the uniformity of live width.
Summary of the invention
The object of the present invention is to provide a kind of heat to coil and use its silicon chip heating system, to improve the disappearance of prior art.
For solveing the technical problem, the present invention provides a kind of heat dish, is arranged in the ccontaining body and connects air exhauster and air intake machine respectively.The heat dish has the thermal treatment zone that many groups are evenly distributed, and has venthole and air admission hole in each thermal treatment zone.Venthole is connected in air exhauster, and air admission hole is around the venthole setting and be connected in the air intake machine, and the air intake machine provides hot-air.
In one embodiment of this invention, the heat dish also has at least one perforation.
In one embodiment of this invention, the quantity of perforation is three, and distribution triangular in shape.
The present invention also provides a kind of silicon chip heating system, comprises ccontaining body, air exhauster, air intake machine and heat dish.The heat dish is arranged in the ccontaining body.The heat dish has the thermal treatment zone that many groups are evenly distributed, and has venthole and air admission hole in each thermal treatment zone.Venthole is connected in air exhauster, and air admission hole is around the venthole setting and be connected in the air intake machine, and the air intake machine provides hot-air.
In one embodiment of this invention, the silicon chip heating system also comprises first heater, is connected in the heat dish.
In one embodiment of this invention, the silicon chip heating system also comprises second heater, is connected in the air intake machine.
In one embodiment of this invention, the silicon chip heating system also comprises first temperature-detecting device and temperature controller.First temperature-detecting device is arranged at air admission hole, and temperature controller is connected in first temperature-detecting device and second heater.
In one embodiment of this invention, the silicon chip heating system also comprises second temperature-detecting device, is arranged at second heater, and is connected in temperature controller.
In one embodiment of this invention, the silicon chip heating system also comprises a plurality of automatic pressure regulators, is arranged at the venthole and the air admission hole of each thermal treatment zone respectively.
In one embodiment of this invention, the silicon chip heating system also comprises the silicon chip protective device, is arranged at said heat dish top, with the silicon chip around heat dish top.
In one embodiment of this invention, the silicon chip heating system also comprises a plurality of position transducers, is arranged at said heat dish top, with the position of the silicon chip above the sense heat dish.
In one embodiment of this invention, the heat dish also has at least one perforation.
In one embodiment of this invention, the quantity of perforation is three, and distribution triangular in shape.
In one embodiment of this invention, the silicon chip heating system also comprises at least one push rod and drive unit.Push rod is arranged in the perforation movably, and drive unit is connected in push rod.
In one embodiment of this invention, the top of ccontaining body has aspirating hole.
Compared with prior art, beneficial effect of the present invention can be:
In heat dish provided by the invention and the silicon chip heating system; The heat dish has a plurality of thermals treatment zone; And have venthole and air admission hole in each thermal treatment zone,, thereby can be suspended in the top of heat dish and directly do not contact with the heat dish so that silicon chip the time is in the state of stress balance in heating; Avoided the silicon chip back side to be heated and coiled pollution, the problem of silicon chip explosion can not take place yet.And, because the thermal treatment zone is evenly distributed, therefore, can guarantee that whole silicon wafer is heated evenly, avoid the problem of silicon chip edge bending deformation.
For let said and other purpose of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates as follows.
Description of drawings
Fig. 1 is a kind of structural representation of known heat dish device;
Fig. 2 is the sketch map of the silicon chip heating system of the present invention's one preferred embodiment;
Fig. 3 is the vertical view of the heat dish of the present invention's one preferred embodiment;
Fig. 4 is the sketch map of the Temperature Detector of the heat dish of the present invention's one preferred embodiment;
Fig. 5 bakes and banks up with earth the flow chart of heating for the silicon chip heating system of using the present invention's one preferred embodiment.
Embodiment
Fig. 2 is the sketch map of the silicon chip heating system of the present invention's one preferred embodiment.Fig. 3 is the vertical view of the heat dish of the present invention's one preferred embodiment.Please refer to Fig. 2 and Fig. 3.In the present embodiment; Silicon chip heating system 1 is used to heat silicon chip 2, and it comprises ccontaining body 10, heat dish 11, air intake machine 12, air exhauster 13, first heater 14, first temperature-detecting device 15, temperature controller 16, second temperature-detecting device (not shown), automatic pressure regulator (not shown), silicon chip protective device 19, position transducer 20, push rod 21, drive unit 22 and second heater 23.Yet the present invention does not do any qualification to this.
In the present embodiment, ccontaining body 10 is the body of heater of silicon chip heating system 1, and its wall have frame loops around.Silicon chip 2 can be positioned in the ccontaining body 10 to bake and bank up with earth technology.The top of ccontaining body 10 has aspirating hole 101, in time volatile matter is taken away curing in the heating process of silicon chip 2.In addition, can be provided with the door (figure does not show) that supplies silicon chip 2 turnover on the sidewall of ccontaining body 10, pick and place silicon chip 2 to make things convenient for manipulator.Yet the present invention does not do any qualification to this.
In the present embodiment, heat dish 11 is arranged in the ccontaining body 10.As shown in Figure 3, heat dish 11 has the thermal treatment zone 110 that many groups are evenly distributed.Have venthole 1101 and air admission hole 1102 in each thermal treatment zone 110, air admission hole 1102 is provided with around venthole 1101.In this, venthole 1101 can be circular hole, and air admission hole 1102 can be the annulus that is provided with around circular hole.
In the present embodiment, venthole 1101 is connected in air exhauster 13.Thus, each venthole 1101 of 13 pairs of heat dishes 11 of air exhauster capable of using vacuumizes, and produces downward pull of vacuum with the silicon chip 2 that heat is coiled 11 tops.In addition, air admission hole 1102 is connected in air intake machine 12, upwards to carry hot-air.Thus, the silicon chip 2 of top promptly receives the buoyancy that the hot-air via air admission hole 1102 input makes progress.In the present embodiment, the buoyancy size of this hot-air equals the gravity of pull of vacuum and silicon chip 2 self, thereby makes and bake and bank up with earth in the heating process whole, and silicon chip 2 can be suspended in the top of heat dish 11, and does not contact with heat dish 11.
In the present embodiment, air admission hole 1102 places can be provided with first temperature-detecting device 15, carry out temperature detection with the hot-air to heating silicon chip 2, thereby are convenient to control the temperature of silicon chip 2.In this, first temperature-detecting device 15 can be Pt100 thermal resistance or thermocouple.Yet the present invention does not do any qualification to this.In addition, each air admission hole 1102 also is respectively arranged with the automatic pressure regulator (not shown) with venthole 1101 places, can keep suspended state to guarantee silicon chip 2, and promptly the buoyancy size of hot-air equals the gravity of pull of vacuum and silicon chip 2 self all the time.Yet the present invention does not do any qualification to this.
In the present embodiment, because the thermal treatment zone 110 is evenly distributed, therefore, in heating process, the situation that silicon chip 2 can not occur swinging up and down is heated and also can be compared evenly.In addition; For holding silicon chip 2 better to prevent its slip; The thermal treatment zone 110 that is positioned at heat dish 11 centre positions can be relatively large, and promptly the venthole 1101 of the middle thermal treatment zone 110 wants big with the venthole 1101 of other thermal treatment zone 110 of size compared of air admission hole 1102 with the size of air admission hole 1102.Yet the present invention does not do any qualification to this.
In the present embodiment, heat dish 11 can have three perforation 1103 of distribution triangular in shape in the position therebetween.In this, push rod 21 can be three accordingly, is arranged at movably respectively in the corresponding perforation 1103, more firmly to upload, to download and to bake and bank up with earth lifting silicon chip 2 in the heating process.Yet, the present invention to bore a hole 1103 and the number and the position of corresponding push rod 21 do not do any qualification.In other embodiments, its number also can be merely more than one or three.
In the present embodiment, push rod 21 can be connected to drive unit 22, with work under the driving of drive unit 22.Yet the present invention does not do any qualification to this.In other embodiments, the up-down of push rod 21 can directly manually be controlled by personnel.
In the present embodiment, heat dish 11 can connect first heater 14.In this, first heater 14 can be bar-shaped or laminated structure, and is arranged in the heat dish 11, with heat hot dish 11.Yet, the present invention to the structure of first heater 14 with the position be set do not do any qualification.
In addition, please refer to Fig. 4.Fig. 4 is the sketch map of the Temperature Detector of the heat dish of the present invention's one preferred embodiment.In the present embodiment, Temperature Detector 24 can select to be used for the probe that semiconductor technology is measured.This Temperature Detector 24 is actually the silicon chip that a plurality of minisize thermoelectric resistance detectors 241 are being inlayed on a surface equably.During test, can be above heat dish 11 with this Temperature Detector 24 (being silicon chip) air supporting, and the center of circle of the center of circle and heat dish 11 that makes probe is on same vertical axis, thus record the temperature at heat dish 11 diverse location places.Yet the present invention does not do any qualification to this.
Please continue with reference to figure 2 and Fig. 3.In the present embodiment, second heater 23 is used for heated air, and second heater 23 is connected in air intake machine 12, sends into air admission hole 1102 with the hot-air after will heating through air intake machine 12.Yet the present invention does not do any qualification to this.In other embodiments, when heated air source, also second heater 23 can be set, and directly the hot-air of heated air source be sent into air admission hole 1102 through air intake machine 12.
In the present embodiment, can be provided with the second temperature-detecting device (not shown) in second heater 23, it is used to detect the temperature of hot-air in second heater 23, the temperature that promptly gets into air intake machine 12 preceding hot-airs.Thus, through detecting the hot air temperature in second heater 23 and the air admission hole 1102 simultaneously, more precise dose control can be provided in the present embodiment.In addition, in the present embodiment, second temperature-detecting device also can be Pt100 thermal resistance or thermocouple.Yet the present invention does not do any qualification to this.
In the present embodiment; Temperature controller 16 can be a microprocessor; It has a plurality of pins, is connected to Temperature Detector 24, first temperature-detecting device 15, the second temperature-detecting device (not shown), first heater 14 and second heater 23 of Fig. 4 respectively.Particularly, temperature controller 16 can be controlled the heating-up temperature of first heater 14 according to Temperature Detector 24 detected temperature values.Simultaneously, according to the temperature value of first temperature-detecting device 15 and the detected hot-air of the second temperature-detecting device (not shown), the heating-up temperature of temperature controller 16 may command second heater 23.In present embodiment, temperature controller 16 can guarantee that the heat dish 11 and the temperature of hot-air are consistent through the heating-up temperature of controlling first heater 14 and second heater 23.Thus, hot-air does not have thermal loss when overheated dish 11, thereby it is more even to guarantee that silicon chip 2 is heated.
In the present embodiment, silicon chip protective device 19 is provided with around heat dish 11, its around the surface area of surface area size that forms and silicon chip 2 about equally, thereby occur can preventing silicon chip 2 landings when unusual in air supporting.In this, silicon chip protective device 19 can be formed in one.Yet the present invention does not do any qualification to this.In other embodiments, it also can be combined by four parts.
In the present embodiment, a plurality of position transducers 20 be arranged at respectively heat dish 11 around, with position, guarantee that the position of silicon chip 2 above heat dish 11 remains unchanged from four direction detecting silicon chip 2.In this, position transducer 20 can be infrared ray sensor.Yet the present invention does not do any qualification to the type and the number of position transducer 20.
Fig. 5 bakes and banks up with earth the flow chart of heating for the silicon chip heating system of using the present invention's one preferred embodiment.Please in the lump with reference to figure 2 and Fig. 5.When 1 pair of silicon chip 2 of silicon chip heating system of using present embodiment and providing was baked and banked up with earth heating, the heating-up temperature that can regulate first heater 14 and second heater 23 earlier made heat dish 11 and hot-air be stabilized in the temperature value of setting.
Subsequently, can open the door on the sidewall of ccontaining body 10, utilize manipulator that silicon chip 2 is sent in the ccontaining body 10, and be positioned on three push rods 21.At this moment, push rod 21 is in the extreme higher position.
In the present embodiment, be positioned on the push rod 21 that is in the extreme higher position at silicon chip 2 after, drive unit capable of using 22 drives push rods 21 and drops to the very near position of distance heat dish 11.At this moment, can the door of opening be shut.Simultaneously, open air intake machine 12 and air exhauster 13, control silicon chip 2 keeps suspended state.Afterwards, the push rod 21 that can descend is to carry out the heating process of baking and banking up with earth of silicon chip 2.The volatile matter that in this process, produces can be discharged by the aspirating hole 101 at ccontaining body 10 tops.
In the present embodiment, when baking and banking up with earth after heating process finishes of silicon chip 2, drive unit 22 drives push rods 21 and rises to withstand silicon chip 2.Subsequently, close hot-air and vacuum, and open the door of ccontaining body 10 sidewalls, utilize manipulator that silicon chip 2 is taken away, repeat the heating that above-mentioned steps can be descended a slice silicon chip through pressure regulating valve.
The silicon chip heating system that preferred embodiment provides according to the present invention can avoid silicon chip directly to contact with the heat dish when the heating silicon chip, also head on silicon chip without push rod, thereby it is more even that silicon chip is heated, and can not cause the crooked deformation of silicon chip.The silicon chip back side can not be heated to coil yet and pollute.In addition, owing to hot dish itself also can be heated, and the maintenance temperature identical with hot-air, therefore can guarantee that hot-air does not have thermal loss when overheated dish, thereby make the temperature uniformity of silicon chip.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.

Claims (15)

1. a heat is coiled; Be arranged in the ccontaining body and connect air exhauster and air intake machine respectively, it is characterized in that said heat dish has the thermals treatment zone that are evenly distributed of organizing more; And have venthole and air admission hole in each said thermal treatment zone; Said venthole is connected in said air exhauster, and said air admission hole is around said venthole setting and be connected in said air intake machine, and said air intake machine provides hot-air.
2. heat dish according to claim 1 is characterized in that, said heat dish also has at least one perforation.
3. heat dish according to claim 2 is characterized in that the quantity of said perforation is three, and distribution triangular in shape.
4. a silicon chip heating system is characterized in that, comprising:
Ccontaining body;
Air exhauster;
The air intake machine; And
The heat dish; Be arranged in the said ccontaining body; Said heat dish has the thermal treatment zone that many groups are evenly distributed, and has venthole and air admission hole in each said thermal treatment zone, and said venthole is connected in said air exhauster; Said air admission hole is around said venthole setting and be connected in said air intake machine, and said air intake machine provides hot-air.
5. silicon chip heating system according to claim 4 is characterized in that, said silicon chip heating system also comprises first heater, is connected in said heat dish.
6. silicon chip heating system according to claim 4 is characterized in that, said silicon chip heating system also comprises second heater, is connected in said air intake machine.
7. silicon chip heater according to claim 6; It is characterized in that; Said silicon chip heating system also comprises first temperature-detecting device and temperature controller; Said first temperature-detecting device is arranged at said air admission hole, and said temperature controller is connected in said first temperature-detecting device and said second heater.
8. silicon chip heater according to claim 7 is characterized in that, said silicon chip heating system also comprises second temperature-detecting device, is arranged at said second heater, and is connected in said temperature controller.
9. silicon chip heating system according to claim 4 is characterized in that, said silicon chip heating system also comprises a plurality of automatic pressure regulators, is arranged at the said venthole and the said air admission hole of each said thermal treatment zone respectively.
10. silicon chip heating system according to claim 4 is characterized in that, said silicon chip heating system also comprises the silicon chip protective device, is arranged at said heat dish top, with the silicon chip around said heat dish top.
11. silicon chip heating system according to claim 4 is characterized in that, said silicon chip heating system also comprises a plurality of position transducers, is arranged at said heat dish top, with the said hot position of coiling the silicon chip of top of sensing.
12. silicon chip heating system according to claim 4 is characterized in that, said heat dish also has at least one perforation.
13. silicon chip heating system according to claim 12 is characterized in that, the quantity of said perforation is three, and distribution triangular in shape.
14. silicon chip heating system according to claim 12 is characterized in that, said silicon chip heating system also comprises at least one push rod and drive unit, and said push rod is arranged in the said perforation movably, and said drive unit is connected in said push rod.
15. silicon chip heating system according to claim 4 is characterized in that the top of said ccontaining body has aspirating hole.
CN201010618374.1A 2010-12-30 2010-12-30 The hot silicon chip heating system coiling and apply it Active CN102543662B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105129428A (en) * 2015-08-06 2015-12-09 哈尔滨工业大学 Air cushion carrying device of secondary platform
CN105316642A (en) * 2015-11-20 2016-02-10 苏州赛森电子科技有限公司 Silicon wafer heating device in sputtering process

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CN105316642B (en) * 2015-11-20 2018-06-12 苏州赛森电子科技有限公司 Silicon chip heating unit in sputtering technology

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