CN105308684B - 用于改善磁阻式隧道结(mtj)器件铁磁层中的外围边缘损伤的方法和装置 - Google Patents

用于改善磁阻式隧道结(mtj)器件铁磁层中的外围边缘损伤的方法和装置 Download PDF

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Publication number
CN105308684B
CN105308684B CN201480005496.XA CN201480005496A CN105308684B CN 105308684 B CN105308684 B CN 105308684B CN 201480005496 A CN201480005496 A CN 201480005496A CN 105308684 B CN105308684 B CN 105308684B
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China
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ferromagnetic
layer
chemically modified
region
peripheral portion
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Expired - Fee Related
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CN201480005496.XA
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English (en)
Chinese (zh)
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CN105308684A (zh
Inventor
X·朱
X·李
S·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201480005496.XA 2013-01-25 2014-01-22 用于改善磁阻式隧道结(mtj)器件铁磁层中的外围边缘损伤的方法和装置 Expired - Fee Related CN105308684B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/749,731 2013-01-25
US13/749,731 US20140210021A1 (en) 2013-01-25 2013-01-25 Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers
PCT/US2014/012602 WO2014116742A1 (en) 2013-01-25 2014-01-22 Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers

Publications (2)

Publication Number Publication Date
CN105308684A CN105308684A (zh) 2016-02-03
CN105308684B true CN105308684B (zh) 2019-05-07

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CN201480005496.XA Expired - Fee Related CN105308684B (zh) 2013-01-25 2014-01-22 用于改善磁阻式隧道结(mtj)器件铁磁层中的外围边缘损伤的方法和装置

Country Status (6)

Country Link
US (2) US20140210021A1 (enExample)
EP (1) EP2948953A1 (enExample)
JP (1) JP2016505220A (enExample)
KR (1) KR20150110691A (enExample)
CN (1) CN105308684B (enExample)
WO (1) WO2014116742A1 (enExample)

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US9396781B2 (en) * 2010-12-10 2016-07-19 Avalanche Technology, Inc. Magnetic random access memory having perpendicular composite reference layer
KR102175471B1 (ko) * 2014-04-04 2020-11-06 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
KR102240769B1 (ko) * 2014-08-14 2021-04-16 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
US10170690B2 (en) 2015-11-16 2019-01-01 Samsung Electronics Co., Ltd. Hybrid-fl with edge-modified coupling
CN108242504A (zh) * 2016-12-27 2018-07-03 上海磁宇信息科技有限公司 一种磁性隧道结的修剪方法及其制备方法
EP3343655B1 (en) * 2016-12-29 2022-03-02 IMEC vzw Magnetic tunnel junction device
US10297746B2 (en) * 2017-04-05 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Post treatment to reduce shunting devices for physical etching process
US10497858B1 (en) * 2018-12-21 2019-12-03 Applied Materials, Inc. Methods for forming structures for MRAM applications
CN117425353A (zh) * 2019-05-09 2024-01-19 联华电子股份有限公司 磁阻式随机存取存储器
US11495737B2 (en) * 2020-06-29 2022-11-08 United Microelectronics Corp. Magnetic tunnel junction (MTJ) device
CN114156404A (zh) * 2021-11-09 2022-03-08 中电海康集团有限公司 一种具有高翻转效率的磁隧道结及其制备方法
US12464955B2 (en) * 2021-12-09 2025-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction device and method of forming the same
US20230309415A1 (en) * 2022-03-23 2023-09-28 Tdk Corporation Magneto resistive element
CN116106801B (zh) * 2023-04-14 2023-06-20 珠海多创科技有限公司 磁阻传感器、磁传感装置及其制备方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20040081841A1 (en) * 2002-10-25 2004-04-29 Kentaro Nakajima Magnetic memory device using damascene process and manufacturing method thereof
CN1505837A (zh) * 2000-08-28 2004-06-16 Ħ��������˾ 高密度mram单元阵列
US20040223267A1 (en) * 2002-06-17 2004-11-11 Childress Jeffrey R. Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
US20120074511A1 (en) * 2010-09-17 2012-03-29 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007032379A1 (ja) * 2005-09-13 2009-03-19 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2008186506A (ja) * 2007-01-29 2008-08-14 Hitachi Global Storage Technologies Netherlands Bv 薄膜磁気ヘッド及びその製造方法
US8981502B2 (en) * 2010-03-29 2015-03-17 Qualcomm Incorporated Fabricating a magnetic tunnel junction storage element
JP5417367B2 (ja) * 2011-03-22 2014-02-12 株式会社東芝 磁気メモリの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1505837A (zh) * 2000-08-28 2004-06-16 Ħ��������˾ 高密度mram单元阵列
US20040223267A1 (en) * 2002-06-17 2004-11-11 Childress Jeffrey R. Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
US20040081841A1 (en) * 2002-10-25 2004-04-29 Kentaro Nakajima Magnetic memory device using damascene process and manufacturing method thereof
US20120074511A1 (en) * 2010-09-17 2012-03-29 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Also Published As

Publication number Publication date
JP2016505220A (ja) 2016-02-18
US20140210021A1 (en) 2014-07-31
US20160254443A1 (en) 2016-09-01
EP2948953A1 (en) 2015-12-02
CN105308684A (zh) 2016-02-03
KR20150110691A (ko) 2015-10-02
WO2014116742A1 (en) 2014-07-31

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