CN105305215A - Laser device - Google Patents
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- CN105305215A CN105305215A CN201510751260.7A CN201510751260A CN105305215A CN 105305215 A CN105305215 A CN 105305215A CN 201510751260 A CN201510751260 A CN 201510751260A CN 105305215 A CN105305215 A CN 105305215A
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Abstract
The invention discloses a laser device. The laser device comprises a semiconductor laser device, an optical shaping system, a coupling reflector, a reflector, a plate electrode pair, a discharge cavity, a matching network, a radio-frequency power supply, a tail mirror and an output mirror, and is characterized in that the discharge cavity is filled with working gas; the plate electrode pair is symmetrically placed inside the discharge cavity, and the surface of the electrode pair has high reflection characteristic for semiconductor pump laser and output gain laser; the semiconductor laser is pump light, the central wavelength of the semiconductor laser is matched with gas particle absorption spectral lines after radio-frequency discharge of the working gas inside the discharge cavity, and the semiconductor laser is injected into the discharge cavity through the coupling reflection mirror. The laser device has the characteristics of compact structure, small size, uniform discharge, high pumping efficiency and the like, can effectively prevent nonlinear effect of high-power continuous single-mode laser and high-power picosecond and femtosecond laser, and realizes high laser beam quality, good atmosphere and optical fiber transmission characteristic and laser output of medium and high power under high processing efficiency condition.
Description
Technical field
The present invention relates to a kind of new laser, particularly a kind of semiconductor pumped hybrid laser that there is volume is little, compact conformation, pumping efficiency are high, good beam quality, air are good with optical fiber transmission property, working (machining) efficiency is high solid state laser and combine with gas laser.。
Background technology
Along with the development of science and technology, Laser Power Supply industrial circle, Laser industry manufacture field and Aero-Space and national defence grow with each passing day for high light beam quality, high efficiency and high-power laser demand.Based on the demand, a kind of new hybrid laser is proposed.
For laser, gain media is its core, which determines the wavelength of output beam, has conclusive impact to the power level of laser and beam mode simultaneously.The gain media of high power laser sources mainly experienced by the bar-shaped gain media of YAG (being difficult to obtain basic mode export)---CO
2gas gain medium (number multikilowatt basic mode)---the development course of fiber gain media (multikilowatt basic mode).High power CO
2laser adopts gas gain medium, basic mode power output is high, good beam quality, but it is low to there is electro-optical efficiency, huge structure, far infrared wavelength is not suitable for the deficiencies such as optical fiber flexible transfer, and in the thin plate of multikilowatt and the laser cutting welding application of medium thickness of slab, high-capacity optical fiber laser progressively replaces high power CO
2laser becomes main force's light source, but due to the impact of nonlinear effect in thermal effect and optical fiber, limits the further lifting of single fiber laser output power.The semiconductor pumped alkali metal vapour laser proposed at present also belongs to semiconductor pumped gaseous state gain media laser structure, but it exists operation material and easily pollutes laser output window; Its operation material is solid-state at normal temperatures, needs to make it be converted to gas by heater means, and this process is not only laser tape extra heat source and controls the temperature in alkali metal vapour pond and the chemically active control of alkali metal proposes challenge; Its Output of laser process also produces the material be harmful to human body and environmental toxic.
Summary of the invention
For above defect and the Improvement requirement of prior art, the present invention provides a kind of semiconductor pumped hybrid laser by existing slab laser technology, its object is to solve existing high-power semiconductor laser beam quality power output that is bad and existing semiconductor pumped gas medium laser existence not high, operation material pollutes in laser output window and its course of work and produces the problem to human body and environmental toxic harmful substance.
For achieving the above object, according to one aspect of the present invention, provide a kind of laser, comprise semiconductor laser, optical shaping system, plate electrode to, coupled mirrors, speculum, matching network, radio-frequency power supply, discharge cavity, tail mirror, outgoing mirror, the reflecting surface of described coupled mirrors and speculum relatively, lay respectively at plate electrode between the both ends of the surface of region of discharge; Described tail mirror and outgoing mirror lay respectively at plate electrode between two sides of region of discharge, both and discharge cavity form optics non-stable resonant cavity jointly, and outgoing mirror is used for laser beam and exports; Described coupled mirrors geometry is identical with speculum, and its reflecting surface offers optical transmission window, enters discharge cavity for pump light transmission; Shape, the size of the size of described optical transmission window, shape and pump spot discharge cavity end face are corresponding.
Described radio-frequency power supply, by matching network with plate electrode to being connected; Described plate electrode forms by two pieces of plate electrodes, and the parallel inwall both sides being installed on discharge cavity, for carrying out radio frequency discharge to the working gas in discharge cavity; Described plate electrode, to being made of metal, has reflex to pump light and Output of laser;
In work, semiconductor laser produces pump light, and the pump light sent pools the hot spot matched with the optical transmission window of coupled mirrors through optical shaping system, transmission is injected in discharge cavity; The laser beam produced exports through outgoing mirror.
Further, the discharge medium in the discharge cavity of described laser is the mist that rare gas or rare gas and other assist gass form; Semiconductor laser send out the gas particle produced after discharge medium radio frequency discharge in the centre wavelength of laser and discharge cavity absorption line match.
Further, the gas of the discharge cavity of described laser adopts argon gas and helium, and the volume ratio of argon gas and helium is 1:50 ~ 1:3, under being operated in 0.5 ~ 1.0 atmospheric pressure.
Further, the coupled mirrors of described laser is being coated with the high-transmission rate film of one deck to this pump light respectively towards the one side of pump light incidence and pump light optical transmission window place, and coupled mirrors remainder is coated with the high reflection film of one deck to this pump light; Or coupled mirrors is coated with the high-transmission rate film of one deck to this pump light at the optical transmission window offered towards the one side of pump light incidence with near the another side that plate electrode is right, and other parts are coated with the high reflection film to this pump light.
Further, the plate electrode of described laser is to being made of aluminum or copper, and its apparent height towards region of discharge is bright and clean, or is coated with one deck and has reflectance coating to pump light and Output of laser high reverse--bias characteristic, for improving pumping efficiency simultaneously.
Further, the plate electrode of described laser is provided with water-cooling channel to inside, can further improve laser power.
Further, the discharge cavity of described laser is made up of metal or ceramic material.
This laser by with existing slab laser technology, have that compact conformation, volume are little, the feature of working stability, it is in conjunction with the advantage of gas laser and semiconductor laser, efficiently solve the problem such as semiconductor laser beam poor quality and solid-state gain medium nonlinear effect at high power, high power can be realized, high light beam quality, the perfect adaptation that short wavelength laser exports, effectively can prevent the continuous single-mode laser of high power, the nonlinear effect of high power psec femtosecond laser, there is high-power Laser output and pulse energy high, good beam quality, quantum efficiency is high, good air and optical fiber transmission property, working (machining) efficiency high, it is Future Outer Space Energy Transfer, the important potential light source in the fields such as ultra-short pulse laser large-scale industrial application.It is different from typical laser, semiconductor pumped discharge gas laser swashs that to penetrate laser be a two-stage pumping process, i.e. radio frequency discharge process and pumping semiconductor laser in discharge tube with radio frequency discharge after the collision process of gas particle, this structure can improve discharge stability, pumping efficiency and conversion efficiency, thus improves the power output of laser.
In general, the above technical scheme conceived by the present invention compared with prior art can obtain following beneficial effect:
(1) operation material used is chemical characteristic is stablized, the binary mixture of the single rare gas of nontoxic high-purity or the mixing of two kinds of rare gas or rare gas and other assist gass form Diversity gas.Such operation material can not produce the poisonous and hazardous material of human and environment in Laser output process.
(2) coating technique is adopted, coupled mirrors is made to have the antireflective properties useful to semiconductor pumping laser at the incident place of semiconductor pumped laser, other parts and coupled mirrors have the high anti-espionage to semiconductor pumping laser, simultaneously in conjunction with optical shaping system, be conducive to semiconductor pumped laser to be injected into more fully in discharge cavity, improve the pump intensity of semiconductor pumped laser, thus improve the pumping efficiency of Output of laser.
(3) plate electrode used is made by the common metal such as aluminium or copper material, processing and fabricating simple cheap; Plate electrode is provided with water-cooled runner to inside, can take away the used heat produced in Laser output process, improves the stability of radio frequency discharge; Enter in discharge cavity by coupled modes, make discharge process there will not be electrode to sputter and pollute discharge cavity environment resonant cavity eyeglass; Plate electrode effects on surface has the collision probability that can increase gas particle after working gas radio frequency discharge in semiconductor pumped laser and discharge cavity to the high anti-espionage of semiconductor pumping laser and Output of laser, improve pumping efficiency, thus be conducive to the power improving Output of laser.
(4) by existing radio-frequency (RF) board bar structure, use non-stable resonant cavity technology to extract Output of laser, technology is more ripe, more reliable; By two pieces of plate electrodes to being placed in parallel in the upper and lower both sides of discharge cavity inwall, this compact conformation, die opening is little, and required puncture voltage is lower, is conducive to stability and the uniformity of electric discharge.
Accompanying drawing explanation
Fig. 1 is the schematic side view of semiconductor pumped hybrid laser provided by the invention;
Fig. 2 be the structure of semiconductor pumped hybrid laser provided by the invention partly cut open structure vertical view;
Fig. 3 (a) and (b) are tape input slot coupling speculum schematic diagrames provided by the invention.
In all of the figs, identical Reference numeral is used for representing identical element or structure, wherein: 1-semiconductor laser, 2-optical shaping system, 3-plate electrode pair, 4-coupled mirrors, 5-speculum, 6-matching network, 7-radio-frequency power supply, 8-discharge cavity, 9-reflectance coating, 10-non-stable resonant cavity, 11-Output of laser, 12-high-transmission rate film, 13-high reflection film, 14-tail mirror, 15-outgoing mirror.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Incorporated by reference to Fig. 1, Fig. 2, Fig. 3 (a) and Fig. 3 (b), in an embodiment of the present invention, adopt working method of the present invention, specific as follows:
To the present invention includes as the semiconductor laser 1 of pumping source, optical shaping system 2, plate electrode 3, discharge cavity 8 that coupled mirrors 4, speculum 5, metal or pottery are made, matching network 6, the radio-frequency power supply 7 that is connected with plate electrode 3 by matching network 6.Wherein, described discharge cavity 8 is made for metal or ceramic material, the operation material of its inside is rare gas that is nontoxic, stable chemical nature, and gas ingredients can be highly purified single rare gas or the binary mixture be made up of two kinds of rare gas or the Diversity gas be made up of rare gas and other assist gass; Described coupled mirrors 4 is coated with the high-transmission rate film 12 of one deck to this semiconductor pumped laser wavelength at the incident place of semiconductor pumped laser, be conducive to fully being injected in discharge cavity 8 of semiconductor pumped laser, improve the injecting power of semiconductor pumped laser and inject intensity; Described plate electrode is made up of metallic aluminium or copper product 3, and inside is provided with water-cooling channel, to be conducive in radio frequency discharge process plate electrode, to the cooling of 3, reducing the deformation of electrode; Make its surface enough bright and clean by coating technique or by manufacturing process, plate electrode is made to possess the high anti-espionage to semiconductor pumping laser and Output of laser to 3, be conducive to the many journeys reflection process forming similar black body absorption in the strip region of discharge between plate electrode is to 3, increase the collision probability of gas particle in strip region of discharge after semiconductor pumped laser and radio frequency discharge, improve pumping quality and pumping efficiency; Described coupled mirrors 5 plated surface one deck is to the high reflection film 13 of semiconductor pumping laser wave band, and itself and coupled mirrors 4 lay respectively at the forward and backward two ends of strip region of discharge, is conducive to the injection intensity and the pumping efficiency that improve pump light; Tail mirror 14 and outgoing mirror 15 form the non-stable resonant cavity 10 in similar and existing slab laser jointly, utilize non-stable resonant cavity technology to extract Output of laser, have the features such as simple and compact for structure, technology maturation, good stability.
In general, the present invention, from the viewpoint of to export high light beam quality and high-power continuous laser etc. efficiently, provides a kind of hybrid laser.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a laser, it is characterized in that, comprise semiconductor laser (1), optical shaping system (2), plate electrode to (3), coupled mirrors (4), speculum (5), matching network (6), radio-frequency power supply (7), discharge cavity (8), tail mirror (14) and outgoing mirror (15);
The reflecting surface of described coupled mirrors (4) and speculum (5) relatively, lay respectively at the both ends of the surface of plate electrode to region of discharge between (3); Described tail mirror (14) and outgoing mirror (15) lay respectively at two sides of plate electrode to region of discharge between (3), tail mirror (14), outgoing mirror (15) and discharge cavity (8) be composition optics non-stable resonant cavity jointly, and outgoing mirror (15) exports for laser beam; Described coupled mirrors (4) geometry is identical with speculum, and its reflecting surface offers optical transmission window, enters discharge cavity for pump light transmission; Shape, the size of the size of described optical transmission window, shape and pump spot discharge cavity (8) end face are corresponding;
Described radio-frequency power supply (7), (3) to be connected with plate electrode by matching network (6); Described plate electrode is made up of two pieces of plate electrodes (3), the parallel inwall both sides being installed on discharge cavity (8), for carrying out radio frequency discharge to the working gas in discharge cavity (8); Described plate electrode is made of metal (3), has reflex to pump light and Output of laser;
In work, semiconductor laser (1) produces pump light, the pump light sent pools the hot spot matched with the optical transmission window of coupled mirrors (4) through optical shaping system (2), transmission is injected in discharge cavity (8); The laser beam produced exports through outgoing mirror (15).
2. laser according to claim 1, is characterized in that, the discharge medium in described discharge cavity (8) is the mist that rare gas or rare gas and other assist gass form; Semiconductor laser (1) send out the centre wavelength of laser and the interior discharge medium radio frequency discharge of discharge cavity (8) after the absorption line of gas particle that produces match.
3. laser according to claim 1 and 2, is characterized in that, described gas adopts argon gas and helium, and the volume ratio of argon gas and helium is 1:50 ~ 1:3, under being operated in 0.5 ~ 1.0 atmospheric pressure.
4. the laser according to claim 1,2 or 3, it is characterized in that: described coupled mirrors (4) is being coated with the high-transmission rate film (12) of one deck to this pump light respectively towards the one side of pump light incidence and pump light optical transmission window place, and coupled mirrors (4) remainder is coated with the high reflection film (13) of one deck to this pump light; Or coupled mirrors (4) is coated with the high-transmission rate film (12) of one deck to this pump light at the optical transmission window offered towards the one side of pump light incidence with near the another side that plate electrode is right, and other parts are coated with the high reflection film (13) to this pump light.
5. the laser according to claim 1,2 or 3, it is characterized in that, described plate electrode is made of aluminum or copper (3), its apparent height towards region of discharge is bright and clean, or is coated with one deck and has reflectance coating (9) to pump light and Output of laser high reverse--bias characteristic simultaneously.
6. the laser according to claim 1,2 or 3, is characterized in that, described plate electrode is provided with water-cooling channel to (3) inside.
7. the laser according to claim 1,2 or 3, is characterized in that, described discharge cavity (8) is made up of metal or ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510751260.7A CN105305215B (en) | 2015-11-06 | 2015-11-06 | A kind of laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510751260.7A CN105305215B (en) | 2015-11-06 | 2015-11-06 | A kind of laser |
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| CN105305215A true CN105305215A (en) | 2016-02-03 |
| CN105305215B CN105305215B (en) | 2018-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552698A (en) * | 2016-03-10 | 2016-05-04 | 中国科学院电子学研究所 | Side face pumping slab waveguide DPAL laser device |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| CN115621829A (en) * | 2022-12-21 | 2023-01-17 | 吉林省永利激光科技有限公司 | Radio frequency excitation waveguide CO 2 Laser device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552698A (en) * | 2016-03-10 | 2016-05-04 | 中国科学院电子学研究所 | Side face pumping slab waveguide DPAL laser device |
| CN105552698B (en) * | 2016-03-10 | 2019-07-23 | 中国科学院电子学研究所 | Side pump bar waveguide DPAL laser |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| WO2018010288A1 (en) * | 2016-07-15 | 2018-01-18 | 华中科技大学 | Resonance reinforced transverse optical pumping device and method for metastable gas laser |
| CN106129792B (en) * | 2016-07-15 | 2018-05-22 | 华中科技大学 | The resonant check lateral light pump arrangement and method of a kind of metastable state gas laser |
| CN115621829A (en) * | 2022-12-21 | 2023-01-17 | 吉林省永利激光科技有限公司 | Radio frequency excitation waveguide CO 2 Laser device |
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| CN105305215B (en) | 2018-08-17 |
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