CN105305215A - a laser - Google Patents
a laser Download PDFInfo
- Publication number
- CN105305215A CN105305215A CN201510751260.7A CN201510751260A CN105305215A CN 105305215 A CN105305215 A CN 105305215A CN 201510751260 A CN201510751260 A CN 201510751260A CN 105305215 A CN105305215 A CN 105305215A
- Authority
- CN
- China
- Prior art keywords
- laser
- discharge
- pump light
- plate electrode
- discharge cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 2
- 230000011514 reflex Effects 0.000 claims description 2
- 238000005086 pumping Methods 0.000 abstract description 17
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 230000009022 nonlinear effect Effects 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013056 hazardous product Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y02B60/50—
Landscapes
- Lasers (AREA)
Abstract
本发明公开了一种激光器，包括半导体激光器、光学整形系统、耦合反射镜、反射镜、平板电极对、放电腔、匹配网络、射频电源、尾镜和输出镜，其特征在于：放电腔内充有工作气体；平板电极对平行对称放置于放电腔内，其表面具有对半导体泵浦激光和输出增益激光的高反射特性；半导体激光为泵浦光，其中心波长与放电腔内工作气体射频放电后的气体粒子吸收谱线相匹配，通过耦合反射镜注入至放电腔内。本发明具有结构紧凑、体积小、放电均匀、泵浦效率高等特点，可以有效防止高功率连续单模激光、高功率皮秒飞秒激光的非线性效应，实现高光束质量、良好的大气与光纤传输特性、高加工效率条件下的中高功率的激光输出。
The invention discloses a laser, which includes a semiconductor laser, an optical shaping system, a coupling reflector, a reflector, a pair of flat electrodes, a discharge cavity, a matching network, a radio frequency power supply, a rear mirror and an output mirror, and is characterized in that: the discharge cavity is filled with There is working gas; the flat plate electrodes are placed parallel and symmetrically in the discharge chamber, and its surface has high reflection characteristics for the semiconductor pump laser and the output gain laser; the semiconductor laser is the pump light, and its central wavelength is the same as the radio frequency discharge of the working gas in the discharge chamber. The final gas particle absorption line matches, and is injected into the discharge cavity through the coupling mirror. The invention has the characteristics of compact structure, small volume, uniform discharge, high pumping efficiency, etc., can effectively prevent the nonlinear effect of high-power continuous single-mode laser and high-power picosecond femtosecond laser, and realize high beam quality, good atmosphere and optical fiber Medium to high power laser output under conditions of transmission characteristics and high processing efficiency.
Description
Technical field
The present invention relates to a kind of new laser, particularly a kind of semiconductor pumped hybrid laser that there is volume is little, compact conformation, pumping efficiency are high, good beam quality, air are good with optical fiber transmission property, working (machining) efficiency is high solid state laser and combine with gas laser.。
Background technology
Along with the development of science and technology, Laser Power Supply industrial circle, Laser industry manufacture field and Aero-Space and national defence grow with each passing day for high light beam quality, high efficiency and high-power laser demand.Based on the demand, a kind of new hybrid laser is proposed.
For laser, gain media is its core, which determines the wavelength of output beam, has conclusive impact to the power level of laser and beam mode simultaneously.The gain media of high power laser sources mainly experienced by the bar-shaped gain media of YAG (being difficult to obtain basic mode export)---CO
2gas gain medium (number multikilowatt basic mode)---the development course of fiber gain media (multikilowatt basic mode).High power CO
2laser adopts gas gain medium, basic mode power output is high, good beam quality, but it is low to there is electro-optical efficiency, huge structure, far infrared wavelength is not suitable for the deficiencies such as optical fiber flexible transfer, and in the thin plate of multikilowatt and the laser cutting welding application of medium thickness of slab, high-capacity optical fiber laser progressively replaces high power CO
2laser becomes main force's light source, but due to the impact of nonlinear effect in thermal effect and optical fiber, limits the further lifting of single fiber laser output power.The semiconductor pumped alkali metal vapour laser proposed at present also belongs to semiconductor pumped gaseous state gain media laser structure, but it exists operation material and easily pollutes laser output window; Its operation material is solid-state at normal temperatures, needs to make it be converted to gas by heater means, and this process is not only laser tape extra heat source and controls the temperature in alkali metal vapour pond and the chemically active control of alkali metal proposes challenge; Its Output of laser process also produces the material be harmful to human body and environmental toxic.
Summary of the invention
For above defect and the Improvement requirement of prior art, the present invention provides a kind of semiconductor pumped hybrid laser by existing slab laser technology, its object is to solve existing high-power semiconductor laser beam quality power output that is bad and existing semiconductor pumped gas medium laser existence not high, operation material pollutes in laser output window and its course of work and produces the problem to human body and environmental toxic harmful substance.
For achieving the above object, according to one aspect of the present invention, provide a kind of laser, comprise semiconductor laser, optical shaping system, plate electrode to, coupled mirrors, speculum, matching network, radio-frequency power supply, discharge cavity, tail mirror, outgoing mirror, the reflecting surface of described coupled mirrors and speculum relatively, lay respectively at plate electrode between the both ends of the surface of region of discharge; Described tail mirror and outgoing mirror lay respectively at plate electrode between two sides of region of discharge, both and discharge cavity form optics non-stable resonant cavity jointly, and outgoing mirror is used for laser beam and exports; Described coupled mirrors geometry is identical with speculum, and its reflecting surface offers optical transmission window, enters discharge cavity for pump light transmission; Shape, the size of the size of described optical transmission window, shape and pump spot discharge cavity end face are corresponding.
Described radio-frequency power supply, by matching network with plate electrode to being connected; Described plate electrode forms by two pieces of plate electrodes, and the parallel inwall both sides being installed on discharge cavity, for carrying out radio frequency discharge to the working gas in discharge cavity; Described plate electrode, to being made of metal, has reflex to pump light and Output of laser;
In work, semiconductor laser produces pump light, and the pump light sent pools the hot spot matched with the optical transmission window of coupled mirrors through optical shaping system, transmission is injected in discharge cavity; The laser beam produced exports through outgoing mirror.
Further, the discharge medium in the discharge cavity of described laser is the mist that rare gas or rare gas and other assist gass form; Semiconductor laser send out the gas particle produced after discharge medium radio frequency discharge in the centre wavelength of laser and discharge cavity absorption line match.
Further, the gas of the discharge cavity of described laser adopts argon gas and helium, and the volume ratio of argon gas and helium is 1:50 ~ 1:3, under being operated in 0.5 ~ 1.0 atmospheric pressure.
Further, the coupled mirrors of described laser is being coated with the high-transmission rate film of one deck to this pump light respectively towards the one side of pump light incidence and pump light optical transmission window place, and coupled mirrors remainder is coated with the high reflection film of one deck to this pump light; Or coupled mirrors is coated with the high-transmission rate film of one deck to this pump light at the optical transmission window offered towards the one side of pump light incidence with near the another side that plate electrode is right, and other parts are coated with the high reflection film to this pump light.
Further, the plate electrode of described laser is to being made of aluminum or copper, and its apparent height towards region of discharge is bright and clean, or is coated with one deck and has reflectance coating to pump light and Output of laser high reverse--bias characteristic, for improving pumping efficiency simultaneously.
Further, the plate electrode of described laser is provided with water-cooling channel to inside, can further improve laser power.
Further, the discharge cavity of described laser is made up of metal or ceramic material.
This laser by with existing slab laser technology, have that compact conformation, volume are little, the feature of working stability, it is in conjunction with the advantage of gas laser and semiconductor laser, efficiently solve the problem such as semiconductor laser beam poor quality and solid-state gain medium nonlinear effect at high power, high power can be realized, high light beam quality, the perfect adaptation that short wavelength laser exports, effectively can prevent the continuous single-mode laser of high power, the nonlinear effect of high power psec femtosecond laser, there is high-power Laser output and pulse energy high, good beam quality, quantum efficiency is high, good air and optical fiber transmission property, working (machining) efficiency high, it is Future Outer Space Energy Transfer, the important potential light source in the fields such as ultra-short pulse laser large-scale industrial application.It is different from typical laser, semiconductor pumped discharge gas laser swashs that to penetrate laser be a two-stage pumping process, i.e. radio frequency discharge process and pumping semiconductor laser in discharge tube with radio frequency discharge after the collision process of gas particle, this structure can improve discharge stability, pumping efficiency and conversion efficiency, thus improves the power output of laser.
In general, the above technical scheme conceived by the present invention compared with prior art can obtain following beneficial effect:
(1) operation material used is chemical characteristic is stablized, the binary mixture of the single rare gas of nontoxic high-purity or the mixing of two kinds of rare gas or rare gas and other assist gass form Diversity gas.Such operation material can not produce the poisonous and hazardous material of human and environment in Laser output process.
(2) coating technique is adopted, coupled mirrors is made to have the antireflective properties useful to semiconductor pumping laser at the incident place of semiconductor pumped laser, other parts and coupled mirrors have the high anti-espionage to semiconductor pumping laser, simultaneously in conjunction with optical shaping system, be conducive to semiconductor pumped laser to be injected into more fully in discharge cavity, improve the pump intensity of semiconductor pumped laser, thus improve the pumping efficiency of Output of laser.
(3) plate electrode used is made by the common metal such as aluminium or copper material, processing and fabricating simple cheap; Plate electrode is provided with water-cooled runner to inside, can take away the used heat produced in Laser output process, improves the stability of radio frequency discharge; Enter in discharge cavity by coupled modes, make discharge process there will not be electrode to sputter and pollute discharge cavity environment resonant cavity eyeglass; Plate electrode effects on surface has the collision probability that can increase gas particle after working gas radio frequency discharge in semiconductor pumped laser and discharge cavity to the high anti-espionage of semiconductor pumping laser and Output of laser, improve pumping efficiency, thus be conducive to the power improving Output of laser.
(4) by existing radio-frequency (RF) board bar structure, use non-stable resonant cavity technology to extract Output of laser, technology is more ripe, more reliable; By two pieces of plate electrodes to being placed in parallel in the upper and lower both sides of discharge cavity inwall, this compact conformation, die opening is little, and required puncture voltage is lower, is conducive to stability and the uniformity of electric discharge.
Accompanying drawing explanation
Fig. 1 is the schematic side view of semiconductor pumped hybrid laser provided by the invention;
Fig. 2 be the structure of semiconductor pumped hybrid laser provided by the invention partly cut open structure vertical view;
Fig. 3 (a) and (b) are tape input slot coupling speculum schematic diagrames provided by the invention.
In all of the figs, identical Reference numeral is used for representing identical element or structure, wherein: 1-semiconductor laser, 2-optical shaping system, 3-plate electrode pair, 4-coupled mirrors, 5-speculum, 6-matching network, 7-radio-frequency power supply, 8-discharge cavity, 9-reflectance coating, 10-non-stable resonant cavity, 11-Output of laser, 12-high-transmission rate film, 13-high reflection film, 14-tail mirror, 15-outgoing mirror.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Incorporated by reference to Fig. 1, Fig. 2, Fig. 3 (a) and Fig. 3 (b), in an embodiment of the present invention, adopt working method of the present invention, specific as follows:
To the present invention includes as the semiconductor laser 1 of pumping source, optical shaping system 2, plate electrode 3, discharge cavity 8 that coupled mirrors 4, speculum 5, metal or pottery are made, matching network 6, the radio-frequency power supply 7 that is connected with plate electrode 3 by matching network 6.Wherein, described discharge cavity 8 is made for metal or ceramic material, the operation material of its inside is rare gas that is nontoxic, stable chemical nature, and gas ingredients can be highly purified single rare gas or the binary mixture be made up of two kinds of rare gas or the Diversity gas be made up of rare gas and other assist gass; Described coupled mirrors 4 is coated with the high-transmission rate film 12 of one deck to this semiconductor pumped laser wavelength at the incident place of semiconductor pumped laser, be conducive to fully being injected in discharge cavity 8 of semiconductor pumped laser, improve the injecting power of semiconductor pumped laser and inject intensity; Described plate electrode is made up of metallic aluminium or copper product 3, and inside is provided with water-cooling channel, to be conducive in radio frequency discharge process plate electrode, to the cooling of 3, reducing the deformation of electrode; Make its surface enough bright and clean by coating technique or by manufacturing process, plate electrode is made to possess the high anti-espionage to semiconductor pumping laser and Output of laser to 3, be conducive to the many journeys reflection process forming similar black body absorption in the strip region of discharge between plate electrode is to 3, increase the collision probability of gas particle in strip region of discharge after semiconductor pumped laser and radio frequency discharge, improve pumping quality and pumping efficiency; Described coupled mirrors 5 plated surface one deck is to the high reflection film 13 of semiconductor pumping laser wave band, and itself and coupled mirrors 4 lay respectively at the forward and backward two ends of strip region of discharge, is conducive to the injection intensity and the pumping efficiency that improve pump light; Tail mirror 14 and outgoing mirror 15 form the non-stable resonant cavity 10 in similar and existing slab laser jointly, utilize non-stable resonant cavity technology to extract Output of laser, have the features such as simple and compact for structure, technology maturation, good stability.
In general, the present invention, from the viewpoint of to export high light beam quality and high-power continuous laser etc. efficiently, provides a kind of hybrid laser.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a laser, it is characterized in that, comprise semiconductor laser (1), optical shaping system (2), plate electrode to (3), coupled mirrors (4), speculum (5), matching network (6), radio-frequency power supply (7), discharge cavity (8), tail mirror (14) and outgoing mirror (15);
The reflecting surface of described coupled mirrors (4) and speculum (5) relatively, lay respectively at the both ends of the surface of plate electrode to region of discharge between (3); Described tail mirror (14) and outgoing mirror (15) lay respectively at two sides of plate electrode to region of discharge between (3), tail mirror (14), outgoing mirror (15) and discharge cavity (8) be composition optics non-stable resonant cavity jointly, and outgoing mirror (15) exports for laser beam; Described coupled mirrors (4) geometry is identical with speculum, and its reflecting surface offers optical transmission window, enters discharge cavity for pump light transmission; Shape, the size of the size of described optical transmission window, shape and pump spot discharge cavity (8) end face are corresponding;
Described radio-frequency power supply (7), (3) to be connected with plate electrode by matching network (6); Described plate electrode is made up of two pieces of plate electrodes (3), the parallel inwall both sides being installed on discharge cavity (8), for carrying out radio frequency discharge to the working gas in discharge cavity (8); Described plate electrode is made of metal (3), has reflex to pump light and Output of laser;
In work, semiconductor laser (1) produces pump light, the pump light sent pools the hot spot matched with the optical transmission window of coupled mirrors (4) through optical shaping system (2), transmission is injected in discharge cavity (8); The laser beam produced exports through outgoing mirror (15).
2. laser according to claim 1, is characterized in that, the discharge medium in described discharge cavity (8) is the mist that rare gas or rare gas and other assist gass form; Semiconductor laser (1) send out the centre wavelength of laser and the interior discharge medium radio frequency discharge of discharge cavity (8) after the absorption line of gas particle that produces match.
3. laser according to claim 1 and 2, is characterized in that, described gas adopts argon gas and helium, and the volume ratio of argon gas and helium is 1:50 ~ 1:3, under being operated in 0.5 ~ 1.0 atmospheric pressure.
4. the laser according to claim 1,2 or 3, it is characterized in that: described coupled mirrors (4) is being coated with the high-transmission rate film (12) of one deck to this pump light respectively towards the one side of pump light incidence and pump light optical transmission window place, and coupled mirrors (4) remainder is coated with the high reflection film (13) of one deck to this pump light; Or coupled mirrors (4) is coated with the high-transmission rate film (12) of one deck to this pump light at the optical transmission window offered towards the one side of pump light incidence with near the another side that plate electrode is right, and other parts are coated with the high reflection film (13) to this pump light.
5. the laser according to claim 1,2 or 3, it is characterized in that, described plate electrode is made of aluminum or copper (3), its apparent height towards region of discharge is bright and clean, or is coated with one deck and has reflectance coating (9) to pump light and Output of laser high reverse--bias characteristic simultaneously.
6. the laser according to claim 1,2 or 3, is characterized in that, described plate electrode is provided with water-cooling channel to (3) inside.
7. the laser according to claim 1,2 or 3, is characterized in that, described discharge cavity (8) is made up of metal or ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510751260.7A CN105305215B (en) | 2015-11-06 | 2015-11-06 | A kind of laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510751260.7A CN105305215B (en) | 2015-11-06 | 2015-11-06 | A kind of laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105305215A true CN105305215A (en) | 2016-02-03 |
| CN105305215B CN105305215B (en) | 2018-08-17 |
Family
ID=55202157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510751260.7A Active CN105305215B (en) | 2015-11-06 | 2015-11-06 | A kind of laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105305215B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552698A (en) * | 2016-03-10 | 2016-05-04 | 中国科学院电子学研究所 | Side face pumping slab waveguide DPAL laser device |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| CN115621829A (en) * | 2022-12-21 | 2023-01-17 | 吉林省永利激光科技有限公司 | A Radio Frequency Excited Waveguide CO2 Laser |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875218A (en) * | 1985-05-29 | 1989-10-17 | Hitachi Cable Ltd. | Thin-film coated waveguide laser |
| US4969155A (en) * | 1989-10-10 | 1990-11-06 | Hughes Aircraft Company | Integrating laser diode pumped laser apparatus |
| US5088102A (en) * | 1990-03-01 | 1992-02-11 | Siemens Aktiengesellschaft | Co or co2 waveguide laser |
| US5771259A (en) * | 1996-11-08 | 1998-06-23 | Dvorkin; Lev P. | Laser electrode coating |
| US20020159496A1 (en) * | 1998-11-12 | 2002-10-31 | Peressini Eugene R. | Laser with gain medium configured to provide an integrated optical pump cavity |
| CN101282021A (en) * | 2007-04-03 | 2008-10-08 | 清华大学 | A pumping method and slab-type solid-state laser with improved efficiency and uniformity |
| US20130308673A1 (en) * | 2011-01-26 | 2013-11-21 | Rofin-Sinar Laser Gmbh | Slab laser |
| CN103794973A (en) * | 2012-10-30 | 2014-05-14 | 福州高意通讯有限公司 | Fiber laser, gain fiber, method for manufacturing gain fiber, and beam shaping system |
| US20150168847A1 (en) * | 2013-12-17 | 2015-06-18 | Kla-Tencor Corporation | Sub 200nm laser pumped homonuclear excimer lasers |
| CN205159779U (en) * | 2015-11-06 | 2016-04-13 | 华中科技大学 | a laser |
-
2015
- 2015-11-06 CN CN201510751260.7A patent/CN105305215B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875218A (en) * | 1985-05-29 | 1989-10-17 | Hitachi Cable Ltd. | Thin-film coated waveguide laser |
| US4969155A (en) * | 1989-10-10 | 1990-11-06 | Hughes Aircraft Company | Integrating laser diode pumped laser apparatus |
| US5088102A (en) * | 1990-03-01 | 1992-02-11 | Siemens Aktiengesellschaft | Co or co2 waveguide laser |
| US5771259A (en) * | 1996-11-08 | 1998-06-23 | Dvorkin; Lev P. | Laser electrode coating |
| US20020159496A1 (en) * | 1998-11-12 | 2002-10-31 | Peressini Eugene R. | Laser with gain medium configured to provide an integrated optical pump cavity |
| CN101282021A (en) * | 2007-04-03 | 2008-10-08 | 清华大学 | A pumping method and slab-type solid-state laser with improved efficiency and uniformity |
| US20130308673A1 (en) * | 2011-01-26 | 2013-11-21 | Rofin-Sinar Laser Gmbh | Slab laser |
| CN103794973A (en) * | 2012-10-30 | 2014-05-14 | 福州高意通讯有限公司 | Fiber laser, gain fiber, method for manufacturing gain fiber, and beam shaping system |
| US20150168847A1 (en) * | 2013-12-17 | 2015-06-18 | Kla-Tencor Corporation | Sub 200nm laser pumped homonuclear excimer lasers |
| CN205159779U (en) * | 2015-11-06 | 2016-04-13 | 华中科技大学 | a laser |
Non-Patent Citations (3)
| Title |
|---|
| A. FAULSTICH等: "Face pumping of thin, solid-state slab lasers with laser diodes", 《OPTICS LETTERS》 * |
| J.HAN等: "Kinetics of an optically pumped metastable Ar laser", 《PROCEEDINGS OF SPIE》 * |
| JIANDE HAN等: "Demonstration of a diode-pumped metastable Ar laser", 《OPTICS LETTERS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552698A (en) * | 2016-03-10 | 2016-05-04 | 中国科学院电子学研究所 | Side face pumping slab waveguide DPAL laser device |
| CN105552698B (en) * | 2016-03-10 | 2019-07-23 | 中国科学院电子学研究所 | Side pump bar waveguide DPAL laser |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| WO2018010288A1 (en) * | 2016-07-15 | 2018-01-18 | 华中科技大学 | Resonance reinforced transverse optical pumping device and method for metastable gas laser |
| CN106129792B (en) * | 2016-07-15 | 2018-05-22 | 华中科技大学 | The resonant check lateral light pump arrangement and method of a kind of metastable state gas laser |
| CN115621829A (en) * | 2022-12-21 | 2023-01-17 | 吉林省永利激光科技有限公司 | A Radio Frequency Excited Waveguide CO2 Laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105305215B (en) | 2018-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105261923A (en) | A semiconductor pump discharge gas laser device | |
| CN202695968U (en) | Passive Q-switched laser based on bonded crystal | |
| CN203774604U (en) | Semiconductor saturable absorber mirror (SESAM) passive mode-locking laser | |
| CN105449510A (en) | All solid state mid-infrared optical parametric oscillator | |
| CN105305215A (en) | a laser | |
| CN102856783A (en) | Intermediate/far infrared super-continuum spectrum fiber laser | |
| CN103594914B (en) | A kind of yellow orange light laser based on self-frequency doubling laser crystal | |
| CN103811990A (en) | Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals | |
| CN105958313A (en) | Laser pulse modulation device based on CrOCl crystal, and application thereof in all-solid-state laser | |
| CN113675719A (en) | Tunable long-wave mid-infrared ultrafast laser light source device | |
| CN103972778A (en) | Kerr lens mode locking Yb: YCOB all-solid-state femtosecond laser pumped by diode | |
| CN113078534A (en) | Intracavity cascade pump laser based on composite structure gain medium | |
| CN202995205U (en) | Multicore photonic crystal fiber based supercontinuum source | |
| CN205159779U (en) | a laser | |
| CN201149952Y (en) | Self-Raman frequency doubling solid-state yellow laser | |
| CN103794293A (en) | Terahertz parameter source based on potassium titanyl phosphate crystal and application thereof | |
| CN105470805A (en) | High-performance laser system based on doping concentration gradually-changed ceramics | |
| CN101159364A (en) | LD terminal pump Nd:YAG/SrWO4/KTP yellow light laser | |
| CN113594842A (en) | Device and method for generating ultrashort pulse of erbium-doped laser | |
| CN206076721U (en) | The mode locked fiber laser of iron-doped zinc selenide saturable absorbing mirror and its composition | |
| CN102244345A (en) | Tunable titanium jewelry laser of 588nm yellow light pump | |
| CN101159362A (en) | LD terminal pump yellow light laser | |
| CN205265030U (en) | Diode pumped gas laser that discharges | |
| CN212968481U (en) | Laser with high repetition frequency and multi-wavelength output | |
| CN113140954B (en) | A Xenon Lamp Pumped Solid-State Laser Based on a Highly Refractive Index Matched Gain Medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |