CN105304606B - Electronic device with two plane formula inductance - Google Patents
Electronic device with two plane formula inductance Download PDFInfo
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- CN105304606B CN105304606B CN201410283184.7A CN201410283184A CN105304606B CN 105304606 B CN105304606 B CN 105304606B CN 201410283184 A CN201410283184 A CN 201410283184A CN 105304606 B CN105304606 B CN 105304606B
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Abstract
The invention discloses a kind of electronic devices to include one first plane formula inductance and one second plane formula inductance.The first plane formula inductance includes at least one first ring-shaped structure and one second ring-shaped structure being connected, and one first magnetic field and one second magnetic field of one second direction of tool, the first direction for generating one first direction of tool respectively are different from the second direction.The second plane formula inductance includes at least the third ring-shaped structure being connected and is constructed with a fourth annular, and a third magnetic field and one the 4th magnetic field of one fourth direction of tool, the third direction for generating one third direction of tool respectively are different from the fourth direction.Wherein first ring-shaped structure is Chong Die at least part of the third ring-shaped structure and forms one first overlapping region, Chong Die at least part that the fourth annular constructs with second ring-shaped structure and form one second overlapping region.The present invention can reduce chip size, save hardware cost.
Description
Technical field
Disclosed herein embodiment be related to a kind of electronic device, it is espespecially a kind of have one first plane formula inductance and
One second plane formula inductance, and the electronic device being locally overlapped each other.
Background technology
Inductance is passive element common in circuit system, can be used to filtering, choked flow and storage energy etc..Citing comes
It says, energy can be stored using inductance in DC-to-dc converter, and the energy size that can be stored and inductance value are into just
Than in order to meet needed for system, required inductance value is usually larger.In another example can be mutually coupled using two inductance with
Form transformer (transformer).
But, what the occupied area of inductance will be big compared to other elements in integrated circuits is more, therefore, it is necessary to seek
A kind of new inductor structure is looked for come area required when reducing implementation inductance, that is, improves inductance element unit area
The inductance value contributed.
Invention content
According to an embodiment of the invention, disclosing one kind has one first plane formula inductance and one second plane formula inductance,
And the electronic device being locally overlapped each other is to solve the above problems.
A first embodiment according to the present invention discloses a kind of electronic device, includes one first plane formula inductance and one
Second plane formula inductance.Wherein the first plane formula inductance includes at least one first ring-shaped structure and one second ring-type being connected
Construction, respectively to generate one first magnetic field with a first direction and one second magnetic field with a second direction, wherein
The first direction is different from the direction of the second direction.The second plane formula inductance includes at least the third ring-type structure being connected
It makes and is constructed with a fourth annular, respectively generating a third magnetic field with a third direction and with a fourth direction
One the 4th magnetic field, the wherein third direction are different from the direction of the fourth direction.Wherein first ring-shaped structure and the third ring
At least part of columnar structure is overlapped and forms one first overlapping region, is constructed with second ring-shaped structure and the fourth annular
At least part is overlapped and forms one second overlapping region.
One of advantage system of the present invention can reduce required chip area during implementation inductance, that is, improve electricity
The inductance value that sensing unit unit area is contributed, and then reduce hardware cost.
Description of the drawings
Fig. 1 is the schematic diagram of a first embodiment of electronic device of the present invention.
Fig. 2A is the schematic diagram of a second embodiment of electronic device of the present invention.
Fig. 2 B are the schematic diagram of a 3rd embodiment of electronic device of the present invention.
Fig. 2 C are the schematic diagram of a fourth embodiment of electronic device of the present invention.
Fig. 2 D are the schematic diagram of one the 5th embodiment of electronic device of the present invention.
Fig. 3 A are the schematic diagram of a sixth embodiment of electronic device of the present invention.
Fig. 3 B are the schematic diagram of one the 7th embodiment of electronic device of the present invention.
Fig. 4 be for use unsymmetrical plan formula inductance form electronic device respectively in the feelings of different overlapping region sizes
The frequency response chart of coupled systemes numerical value under condition.
Fig. 5 is the schematic diagram of one the 8th embodiment of electronic device of the present invention.
Fig. 6 is the frequency response chart of 8 fonts and the inductance value of non-8 font planar inductor.
Wherein, the reference numerals are as follows:
102、104、202A、204A、202B、204B、202C、
204C, 202D, 204D, 302A, 304A, 302B, 304B plane formula inductance
106th, 206A, 206B, 206C, 206D, 306A, 306B, 500 electronic devices
1022、1024、1042、1044、2022A、2024A、
2042A, 2044A, 2022B, 2024B, 2042B, 2044B ring-shaped structure
502nd, 504 subelement
Specific embodiment
Fig. 1 is the schematic diagram of a first embodiment of electronic device of the present invention.Wherein an electronic device 106 is by a plane formula
The inductance that 102 and one plane formula inductance 104 of inductance is formed.Plane formula inductance 102 is located at one first conductor layer, and comprising
There are one first ring-shaped structure 1022 and one second ring-shaped structure 1024 and generate one first magnetic field with a first direction respectively
With one second magnetic field with a second direction, such as the first direction for formed perpendicular to the first ring-shaped structure 1022 one
Plane and by the plane lower section up；And the second direction is the plane that is formed perpendicular to the second ring-shaped structure 1024
And by the plane top down.Plane formula inductance 102 has an inductance value H102.On the other hand, plane formula inductance 104
In one second conductor layer different from one first conductor layer, and include one first ring-shaped structure 1042 and one second ring-shaped structure
1044 and generate a third magnetic field with a third direction and one the 4th magnetic field with a fourth direction respectively, for example, this
Three directions for the plane that is formed perpendicular to the first ring-shaped structure 1042 and by the plane lower section up；And the four directions
To the plane to be formed perpendicular to the second ring-shaped structure 1044 and by the plane top down.The wherein first direction
Identical with the direction of the third direction, the second direction is identical with the direction of the fourth direction.Wherein, the first ring-shaped structure 1022
Opening towards drawing right, the opening of second ring-shaped structure 1024 is towards above drawing, the opening court of third ring-shaped structure 1042
Drawing right, the opening of fourth annular construction 1044 is towards below drawing.The plane formula inductance 104 has an inductance value H104.This
Invention is coupled to each other and stacks to be combined into electronic device (inductance) using plane formula inductance 102 and plane formula inductance 104
106.Wherein, the endpoint of the first ring-shaped structure 1022 and the endpoint of third ring-shaped structure 1042 can perforate (VIA) connect so that
An inductance (that is, electronic device 106) is collectively formed in plane formula inductance 102 and plane formula inductance 104.Plane formula inductance 102
The cyclic annular structure of plane domain and the first of plane formula inductance 104 that first ring-shaped structure 1022 and the second ring-shaped structure 1024 are formed
It is completely overlapped to make 1042 plane domains formed with the second ring-shaped structure 1044, with increase electronic device (inductance) as possible
A 106 inductance value H106.Make inductance value H106Respectively greater than inductance value H102And inductance value H104, to reach increase unit area
Inductance value purpose.Specifically, method coiling combines two 8 obtained frameworks of font planar inductor of class, energy according to this
Enough reach the unit area inductance value than well known spiral framework bigger.Further, since the first ring-shaped structure 1022 and third ring
Therefore the magnetic direction of columnar structure 1042 and the magnetic direction of the second ring-shaped structure 1024 and fourth annular construction 1044 are on the contrary, may be used
To reduce electromagnetic interference (EMI).
Fig. 2A is the schematic diagram of a second embodiment of electronic device of the present invention.Wherein an electronic device 206A is by a plane
The transformer that formula inductance 202A and a plane formula inductance 204A are formed.Plane formula inductance 202A is located at one first conductor
Layer, and include one first ring-shaped structure 2022A and one second ring-shaped structure 2024A and respectively the one first of generation different directions
Magnetic field and one second magnetic field, for example, first magnetic direction for the plane that is formed perpendicular to the first ring-shaped structure 2022A simultaneously
And by the plane lower section up；And second magnetic direction is the plane that is formed perpendicular to the second ring-shaped structure 2024A
And by the plane top down.Plane formula inductance 202A has an inductance value H202A.On the other hand, plane formula inductance 204A
Positioned at one second conductor layer different from one first conductor layer, and it is cyclic annular to include one first ring-shaped structure 2042A and one second
It constructs 2044A and generates one first magnetic field and one second magnetic field of different directions respectively, such as first magnetic direction is vertical
In the first ring-shaped structure 2042A planes formed and by the plane lower section up；And second magnetic direction is vertical
Directly in the second ring-shaped structure 2044A planes formed and by the plane top down.Plane formula inductance 204A has
One inductance value H204A.The present invention overlies one another to be combined into electronics using plane formula inductance 202A and plane formula inductance 204A
Device (transformer) 206A.Wherein coupled systemes numerical value K206ASize plane formula inductance 202A the first ring-shaped structure 2022A with
The plane domain and the first ring-shaped structure 2042A of plane formula inductance 204A and the second ring that second ring-shaped structure 2024A is formed
The size of overlapping region between the plane domain that columnar structure 2044A is formed determines.In practice, the first ring-shaped structure
2022A and the second ring-shaped structure 2024A is not limited to be embodied on same crystal grain (die).In some embodiments it is possible to make
(3D Stack Packaging) is filled, that is, the first ring-shaped structure 2022A and the second ring-shaped structure 2024A with three-dimensional stacked structure
Upper crystal grain and lower crystal grain (or opposite design) can be located at respectively, it is intermediate to be filled with dielectric medium (under-fill) material.Its
Its embodiment can also have similar design.
Fig. 2 B are the schematic diagram of a 3rd embodiment of electronic device of the present invention.Wherein an electronic device 206B is by a plane
The transformer that formula inductance 202B and a plane formula inductance 204B are formed.Plane formula inductance 202B includes positioned at one first
One first ring-shaped structure 2022B of the conductor layer and one second ring-shaped structure 2024B positioned at one second conductor layer, and generate respectively
One first magnetic field with a first direction with one second magnetic field of a second direction, such as the first direction is perpendicular to the
A plane that one ring-shaped structure 2022B is formed and by the plane lower section up；And the second direction is perpendicular to second
A plane that ring-shaped structure 2024B is formed and by the plane top down.Plane formula inductance 202B has an inductance value
H202B.On the other hand, plane formula inductance 204B includes positioned at one first ring-shaped structure 2042B of second conductor layer and position
In one second ring-shaped structure 2044B of first conductor layer, and the third magnetic field with a third direction and tool are generated respectively
There is one the 4th magnetic field of a fourth direction, such as the first direction is one flat for what is formed perpendicular to the first ring-shaped structure 2042B
Face and by the plane lower section up；And the second direction is the plane that is formed perpendicular to the second ring-shaped structure 2044B
And by the plane top down.Plane formula inductance 204B has an inductance value H204B.The present invention uses plane formula inductance
202B and plane formula inductance 204B overlies one another to be combined into electronic device (transformer) 206B, wherein plane formula inductance 202B
The first ring-shaped structure 2022B it is Chong Die with the first ring-shaped structure 2042B of plane formula inductance 204B；The of plane formula inductance 202B
Two ring-shaped structure 2024B are Chong Die with the second ring-shaped structure 2044B of plane formula inductance 204B, thus while plane formula inductance 202B
With plane formula inductance 204B using two layers of conductor layer, but electronic device (transformer) 206B being combined into still only is needed two layers in total
Conductor layer.Wherein coupled systemes numerical value K206BSize it is cyclic annular by the first ring-shaped structure 2022B of plane formula inductance 202B and second
The plane domain and the first ring-shaped structure 2042B and the second ring-shaped structure of plane formula inductance 204B that construction 2024B is formed
The size of overlapping region between the plane domain that 2044B is formed determines.
Fig. 2 C are the schematic diagram of a fourth embodiment of electronic device of the present invention.Wherein an electronic device 206C is flat by one
The transformer that face formula inductance 202C and a plane formula inductance 204C are formed.Electronic device 206C and electronic device 206A phases
Seemingly, difference is only that since overlapping region becomes larger, a coupled systemes numerical value K of electronic device 206C206CSize can be more than electronics
The coupled systemes numerical value K of device 206A206A.In addition electronic device 206C has used one layer of conductor layer to be used as more compared with electronic device 206A
Coiling uses.
Fig. 2 D are the schematic diagram of one the 5th embodiment of electronic device of the present invention.Wherein an electronic device 206D is flat by one
The transformer that face formula inductance 202D and a plane formula inductance 204D are formed.Electronic device 206D and electronic device 206B phases
Seemingly, difference is only that since overlapping region becomes larger, and the size of a coupled systemes numerical value K206D of electronic device 206D can be more than electronics
The coupled systemes numerical value K206B of device 206B.In addition electronic device 206D has used one layer of conductor layer to use more compared with electronic device 206B
Make coiling use.
Fig. 3 A are the schematic diagram of a sixth embodiment of electronic device of the present invention.A wherein electronic device 306A be by one not
The transformer that symmetrical plane formula inductance 302A and a unsymmetrical plan formula inductance 304A are formed.Electronic device 306A and electricity
Sub-device 206A is similar, and difference is only that one first ring-shaped structure and one of the plane formula inductance 302A in electronic device 306A
The annular number of turns of second ring-shaped structure is different so that first ring-shaped structure of plane formula inductance 302A and the second cyclic annular structure
The magnetic field size made differs；And plane formula inductance 304A is also such.Specifically, the plane formula electricity in electronic device 306A
First ring-shaped structure with the more annular number of turns in sense 302A is partially overlapped in plane formula inductance 304A with more polycyclic
First ring-shaped structure of the shape number of turns；And there is being somebody's turn to do for the less annular number of turns in the plane formula inductance 302A in electronic device 306A
Second ring-shaped structure partially overlaps second ring-shaped structure in plane formula inductance 304A with the less annular number of turns.
Fig. 3 B are the schematic diagram of one the 7th embodiment of electronic device of the present invention.A wherein electronic device 306B be by one not
The transformer that symmetrical plane formula inductance 302B and a mirror image (mirrored) unsymmetrical plan formula inductance 304B are formed.Electricity
Sub-device 306B is similar with electronic device 306A, difference be only that in the plane formula inductance 302B in electronic device 306B have compared with
One first ring-shaped structure of the polycyclic shape number of turns, which partially overlaps, has the one first of the less annular number of turns in plane formula inductance 304B
Ring-shaped structure；And there is one second ring-shaped structure portion of the less annular number of turns in the plane formula inductance 302B in electronic device 306B
Divide one second ring-shaped structure for being overlapped in and there is the more annular number of turns in plane formula inductance 304B.Thus, due to asymmetry
Reverse phase negative function caused by mirror-image structure, along with the displacement phase between plane formula inductance 302B and plane formula inductance 304B
Compared with the bigger that the displacement between plane formula inductance 302A and plane formula inductance 304A comes, according to Ampere's right-handed screw rule (thumb
Rule), reverse phase negative function at this time aggravates.Therefore, the coupled systemes numerical value K of electronic device (transformer) 306B306BSize compared with
Electronic device (transformer) 306A comes lower.
Fig. 4 be for use unsymmetrical plan formula inductance form electronic device respectively in the feelings of different overlapping region sizes
The frequency response chart of coupled systemes numerical value under condition.A wherein curve C1 is represented by a unsymmetrical plan formula inductance (8 font planes electricity
Feel framework and coil number is 2 circles：1 circle) and another unsymmetrical plan formula inductance (8 font planar inductor frameworks and coil number are 2
Circle：1 circle) the coupled systemes numerical value of an electronic device (transformer) (configuration mode in similar Fig. 3 A) that overlies one another formed
Frequency response, the wherein overlapping degree of the unsymmetrical plan formula inductance and another unsymmetrical plan formula inductance are maximum (complete
Full weight is folded or is almost overlapped)；One curve C2 represent by a unsymmetrical plan formula inductance (8 font planar inductor frameworks and
Coil number is 2 circles：1 circle) and another mirror image unsymmetrical plan formula inductance (8 font planar inductor frameworks and coil number are 1 circle：2
Circle) frequency of the coupled systemes numerical value of an electronic device (transformer) (configuration mode in similar Fig. 3 B) that overlies one another formed
Response, the wherein overlapping degree of the unsymmetrical plan formula inductance and another unsymmetrical plan formula inductance are maximum (weight completely
Folded or almost overlapping).By curve C1 and C2 it is known that at low frequency (about in below 13GHz), completely overlapped
Or under the degree being almost overlapped, stacking another mirror image unsymmetrical plan formula inductance using a unsymmetrical plan formula inductance can
Coupling value is reduced, therefore in the case where target coupling value is relatively low with essence, same low coupling can be reached with smaller area
Conjunction value effect.In addition, with the configuration of curve C1, overlapping degree is reduced to 75% and 50% respectively, a curve can be obtained
A C3 and curve C5；With the configuration of curve C2, overlapping degree is reduced to 75% and 50% respectively, a curve can be obtained
A C4 and curve C6.By curve C3, C4 and C5, the C6 in Fig. 4 it is known that in low frequency (about below 10GHz), it is being overlapped
In the case that degree is 75% and 50%, stacking another mirror image unsymmetrical plan formula inductance using a unsymmetrical plan formula inductance can
Coupling value is reduced with essence and significantly, therefore in the case where target coupling value is relatively low, can reach same with smaller area
When place the purpose of two inductance or a transformer.Therefore, using different overlapping degree or area institute can be realized to design
The coupled systemes numerical value needed.
Fig. 5 is the schematic diagram of one the 8th embodiment of electronic device of the present invention.One electronic device 500 is one 8 font planes
Inductance includes a part of element 502 positioned at one first conductor layer and another part element positioned at one second conductor layer
504.Which part element 502 and subelement 504 have two laps, i.e. one first crosspoint P1 and one second intersects
Point P2.Fig. 6 is the frequency response chart of 8 fonts and the inductance value of non-8 font planar inductor.In figure 6, a curve D1 is in Fig. 5
8 font planar inductors correspond to the inductance value of different frequency；One curve D2 is that the planar inductor of non-8 font framework corresponds to different frequencies
The inductance value of rate, and 8 font planar inductors in Fig. 5 have equal area.It will be appreciated from fig. 6 that the electronic device 500 in Fig. 5
The inductance value (I) of unit area is effectively promoted in the range of certain frequency reduces chip size, saving hardware cost to reach
Purpose.
It should be noted that the true form of the ring-shaped structure of planar inductor in the present invention is not limited in embodiment
The specific kenel of the ring-shaped structure of planar inductor.Also that is, the ring-shaped structure of planar inductor can be rectangular, round or polygon
Shape.In addition, the configuration for the ring-shaped structure of planar inductor or its coiling in different conductor layer, also not using above-described embodiment as
Limit.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification should all belong to the covering scope of the present invention.
Claims (9)
1. a kind of electronic device, includes：
One first plane formula inductance, including at least one first ring-shaped structure that is connected and one second ring-shaped structure, respectively to
One first magnetic field with a first direction and one second magnetic field with a second direction are generated, wherein the first direction is with being somebody's turn to do
The direction of second direction is different；And
One second plane formula inductance is constructed including at least the third ring-shaped structure that is connected and a fourth annular, respectively to
Generate a third magnetic field with a third direction and one the 4th magnetic field with a fourth direction, wherein the third direction and
The direction of the fourth direction is different；
Wherein first ring-shaped structure is Chong Die at least part of the third ring-shaped structure and forms one first overlapping region, with
Second ring-shaped structure is Chong Die at least part that the fourth annular constructs and forms one second overlapping region；
Wherein the first plane formula inductance forms a transformer with the second plane formula inductance；
Wherein the transformer has a coupled systemes numerical value, and the size of the coupled systemes numerical value is by first and second overlapping region
Size determines；
Wherein, the first plane formula inductance and the second plane formula inductance are class splayed configuration planar inductor.
2. electronic device as described in claim 1, wherein the first plane formula inductance have one first inductance value, this is second flat
Face formula inductance has one second inductance value, and the first plane formula inductance coupling to the second plane formula inductance has one to form
One third inductance of third inductance value, the third inductance value are more than first inductance value and any one in second inductance value, and
The size of the third inductance value is determined according to the size of first and second overlapping region.
3. electronic device as described in claim 1, the wherein first direction are identical with the direction of the third direction, the second party
To identical with the direction of the fourth direction.
4. electronic device as described in claim 1, wherein the first plane formula inductance be located at one first conductor layer and this
Two plane formula inductance are located at one second conductor layer.
5. electronic device as described in claim 1, wherein first ring-shaped structure and second ring-shaped structure are located at respectively
One first conductor layer and one second conductor layer, the third ring-shaped structure and fourth annular construction are located at this respectively second leads
Body layer and first conductor layer.
At least one that 6. electronic device as described in claim 1, wherein first ring-shaped structure are constructed with the fourth annular
Divide and be overlapped and formed a third overlapping region.
7. electronic device as claimed in claim 6, wherein first magnetic field are more than second magnetic field, which is less than should
4th magnetic field.
8. electronic device as described in claim 1, wherein first ring-shaped structure and the opening direction of the third ring-shaped structure
Identical, second ring-shaped structure is different from the opening direction that the fourth annular constructs.
9. electronic device as described in claim 1, wherein the first plane formula inductance are located at not with the second plane formula inductance
Same crystal grain, and a transformer is collectively formed using three-dimensional stacked structure dress.
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| US11728087B2 (en) | 2016-05-25 | 2023-08-15 | Delta Electronics (Shanghai) Co., Ltd | Core structure and magnetic device |
| CN107437456B (en) * | 2016-05-25 | 2021-03-23 | 台达电子企业管理（上海）有限公司 | Magnetic core structure and magnetic element |
| CN106486262A (en) * | 2016-11-04 | 2017-03-08 | 王奉瑾 | A kind of multiphase multiple magnetic circuit transformer |
| CN106373744A (en) * | 2016-11-04 | 2017-02-01 | 王奉瑾 | Multi-magnetic circuit winding and transformation device of using same |
| US10418172B2 (en) * | 2016-12-07 | 2019-09-17 | Astec International Limited | Methods of forming coils for inductive components |
| CN112234983A (en) * | 2020-10-29 | 2021-01-15 | 华中科技大学 | Broadband VCO based on source damping resistor |
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| TW200414502A (en) * | 2003-01-17 | 2004-08-01 | Mitsubishi Electric Corp | Inductor whose energy loss is small |
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| JP2008277485A (en) * | 2007-04-27 | 2008-11-13 | Fuji Electric Device Technology Co Ltd | Transformer unit and power converter |
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| TW200414502A (en) * | 2003-01-17 | 2004-08-01 | Mitsubishi Electric Corp | Inductor whose energy loss is small |
| CN101621065A (en) * | 2008-07-03 | 2010-01-06 | 恩益禧电子股份有限公司 | Circuit device |
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