CN105304268B - Device, variable inductance and the device with the variable inductance of changeable parameters - Google Patents
Device, variable inductance and the device with the variable inductance of changeable parameters Download PDFInfo
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- CN105304268B CN105304268B CN201410259442.8A CN201410259442A CN105304268B CN 105304268 B CN105304268 B CN 105304268B CN 201410259442 A CN201410259442 A CN 201410259442A CN 105304268 B CN105304268 B CN 105304268B
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Abstract
The present invention relates to the device of changeable parameters, variable inductance and device with the variable inductance, the device with variable inductance, which includes, one the inductance with inductance value, the first conductor with the first grounding characteristics, and has the second conductor of the second grounding characteristics.The device also includes the first single reticular structure, and it includes the first grid.First grid is electrically connected to first conductor including the first wire, and second wire be electrically connected to first wire and first conductor, wherein, first wire, the second wire and the first loop of first conductor formation are corresponding with the inductance, to adjust the inductance value.The first single reticular structure also includes the second grid.Second grid is electrically connected to first wire and second conductor including privates, and privates are electrically connected to the privates and second conductor, wherein, the privates, privates and second conductor formation second servo loop are corresponding with the inductance, to adjust the inductance value.
Description
Technical field
The application is related to the device of changeable parameters, more particularly to the device of variable inductance.
Background technology
Inductance is commonly used for the voltage-controlled oscillator (VCO) (VCO) for including inductance capacitance resonant cavity (LC Tank).Work as manufacture of semiconductor
When make it that electric crystal gate width, length, oxidated layer thickness etc. change with technological evolvement, variable inductance helps to mend
Repay.
The voltage-controlled oscillator (VCO) tuning range (Tuning Range) can be expanded by changing the inductance value of inductance.Especially, voltage-controlled shake
The concussion frequency for swinging device may require that millimeter wave designs (Millimeter Design), and in this respect, concussion frequency is more than 30GHz.
Past, technical field personage adapt to different wave length by adjusting the capacity cell of golden oxygen half (MOSCAP) in voltage-controlled oscillator (VCO).
Designed for the millimeter wave more than 30GHz, the golden capacity cell technology of oxygen half has almost reached the limit of.Main cause is with processing procedure
Change, such as the 20nm processing procedures reached now, line width reduce, the thickness positioned at lower layer metal level also declines therewith, in addition,
Inductively or capacitively value more required for high frequency is also relatively small.The golden electric capacity of oxygen half is then always formed in lower layer metal on processing procedure
Layer so that the resistance value that the golden electric capacity of oxygen half is subjected to explodes.For simplest RC serial circuits, its Q value (Quality
Factor 1/ (ω RC)) is represented by, wherein, ω is operation angular frequency, and R is resistance value, and C is capacitance.In the case, it is electric
The change of appearance declines for the influence degree that tuning range adjusts, and, adjust anyway, because resistance is excessive, Q values can not all have
Effect lifting, thus develop toward variable inductance.For variable inductance, if adding switch concatenation between two inductance, pass through switch
Open circuit and it is closed circuit adjust the equivalent inductance value of variable inductance, shortcoming is that the resistance value switched and inductance value are comprised in string
Connect in circuit, cause overall inductance value can not be close to the inductance value of ideal inductance.
The details of more related prior arts can be by the United States Patent (USP) and Publication No. of Patent No. 7460001
20120223796 U.S. Patent application is learnt.
The content of the invention
In view of the deficiency of prior art, a purpose of the invention is to provide a kind of " electric device and tool of changeable parameters
Have the device and its control method of the electric device of the changeable parameters " parameter adjustment element is provided in existing electrical components, at least
Improve such as inductance value adjusting range to fix, the problem of sacrificing the system effectiveness such as excessive unnecessary Q values.
The another object of this case is to provide a kind of frequency characteristic for the device for improving the changeable parameters, Q values, phase noise
Performance or signal synchronously transmit the element of performance.
The another object of this case, which is to provide to be not required to significantly change on a kind of processing procedure, can be achieved to the changeable parameters
Device the element that is adjusted of electrical parameter.
The present invention can be the device of a changeable parameters, and it includes the electrical components of one electrical parameter of tool, a tool one first
First conductor of grounding characteristics.The device of the changeable parameters is also electrically connected to first conductor, Yi Jiyi comprising one first wire
Second wire is electrically connected to first wire and first conductor.Wherein, first wire, second wire and this first lead
Body forms an at least major part for primary Ioops, to adjust the electrical parameter.
Especially, the present invention also can be an inductance adjusting apparatus of a variable inductance, and it, which includes one, has a grounding characteristics
Conductor.The inductance adjusting apparatus also includes a single reticular structure, and it includes a grid, and the grid is formed by two wires.Its
In, respectively the wire is electrically connected to the conductor, and forms primary Ioops with the conductor, to adjust an inductance value of the variable inductance.
The present invention more can be a device with a variable inductance, and it, which includes one, has the inductance of an inductance value, and one has
First conductor of one first grounding characteristics, and second conductor with one second grounding characteristics.The device also includes one first
Single reticular structure, it includes one first grid.First grid is electrically connected to first conductor including one first wire, and
One second wire is electrically connected to first wire and first conductor, wherein, first wire, the second wire and this first lead
One first loop of body formation is corresponding with the inductance, to adjust the inductance value.The first single reticular structure also includes one second
Grid.Second grid is electrically connected to first wire and second conductor, and privates electricity including a privates
The privates and second conductor are connected to, wherein, the privates, privates and second conductor form one second
Loop is corresponding with the inductance, to adjust the inductance value.
The effect of this case and purpose, it can illustrate by following embodiments, in order to having a better understanding.
Brief description of the drawings
Figure 1A is the top view of the preferred embodiment of the device of the changeable parameters of this case one.
Figure 1B is the stereogram of the preferred embodiment of a parameter adjustment controls.
Fig. 1 C are the stereograms of another preferred embodiment of the device of a changeable parameters.
Fig. 2A is the top view of the preferred embodiment of the variable inductance of this case one.
Fig. 2 B are the top views of the preferred embodiment of a single reticular structure of the variable inductance of this case one.
Fig. 3 A are the top views of the preferred embodiment for the device that this case one has a variable inductance.
Fig. 3 B are the top views of the different embodiments of the single reticular structure of this case one.
Fig. 3 C are the side views of the preferred embodiment for the device that this case one has a variable inductance.
Fig. 4 is the embodiment of this case control element connection single reticular structure.
Fig. 5 is other different embodiments of this case single reticular structure.
Fig. 6 A are one variable inductance preferred embodiments of this case.
Fig. 6 B are the experimental datas of one variable inductance preferred embodiment of this case.
Fig. 6 C are the experimental datas compared between this case difference variable inductance preferred embodiment.
Fig. 7 is the schematic diagram of the preferred embodiment of the voltage-controlled oscillator (VCO) of this case one.
Embodiment
The present invention will be illustrated below, be familiar with this technology person it is understood that following description is only illustratively used, without
For limiting the present invention.
Electric device below for the changeable parameters of this case preferred embodiment and the electric device with the changeable parameters
Device and its control method be described, but actual framework and practiced method must not necessarily comply fully with the framework of description
With method, be familiar with this those skilled in the art when can not depart from the present invention true spirit and scope in the case of, make many variations and
Modification.The technology contents of this case for convenience of explanation, identical element is represented using identical component symbol in each embodiment.
Figure 1A is referred to, is the top view of the preferred embodiment of the device of the changeable parameters of this case one.The dress of the changeable parameters
Put 100 electrical components 110 for including one electrical parameter of tool, the first conductor 121 of one first grounding characteristics of tool.The parameter can
The device 100 of change is also electrically connected to first conductor 121 comprising one first wire 131, and one second wire 132 is electrically connected to
First wire 131 and first conductor 121.Wherein, first wire 131, second wire 132 and first conductor
121 form an at least major part for primary Ioops, to adjust the electrical parameter.Under the configuration of the 1st figure, it can at least reach
Two advantages.First, electrical parameter that can substantially effectively using the region that the loop is surrounded to the electrical components 110
Make careful adjustment, the mode that the utilization one being no longer limited in prior art because the loop switchs connecting wire formed and
It is by being formed with one first the first conductor of grounding characteristics 121.Second, reducing effect of parasitic capacitance, make the changeable parameters
Frequency characteristic, the Q values of device 100 will not be because of parasitic capacitance the reason for and at the very start by very big sacrifice.With Fig. 1's
Exemplified by electrical components 110, because only being formed at the beginning using the first wire 131, the second wire 132 and first conductor 121
Primary Ioops, produce parasitic capacitance dominates part by only closest to the parasitic capacitance 191 and 192 of the electrical components 110, wherein
131 and 132 are connected between 121, switch or the related element up to switching function can be placed, to switch over.Obvious,
The loop formed using the first wire 131, the second wire 132, it is in the case where substantially effectively utilizing the region that loop is surrounded, greatly
Width reduces the configuration of effect of parasitic capacitance.And coordinate less line width (for example, less than 5 microns) in a preferred embodiment,
The even more best configuration of energy minimization parasitic capacitance number.Therefore, the frequency characteristic of the device 100 of the changeable parameters, Q values are more first
More preferably, therefore the adjustable scope of electrical parameter will not also narrow preceding technology.
It will be apparent that the applicability of the device 100 of the changeable parameters is quite extensive, electrical components 110 can be appointed
It what is the need for the electrical components to be finely adjusted to its electrical parameter, for example, in semiconductor structure or non-semiconductor structure, or inductance electricity
Hold the variable inductance of resonant cavity, radio-frequency choke, matching network and voltage-controlled oscillator (VCO) etc..
Secondly, the first conductor 121 of the grounding characteristics of tool one first is significant, because its dress to changeable parameters
Put and made a difference in the lifting of 100 effectiveness.Generally, first conductor 121 can be an earth terminal, represent it and be at least an energy
The conductor of high current is born, whether DC earthing end (DC Ground) or AC ground (AC Ground).With semiconductor
Exemplified by structure, it can be, but not limited to be ground plane of the position in metal level (for example, M1 layers), can also be connected to power supply supply VDD,
VSS, or even it is connected to retaining ring (Guard Ring).The setting of first conductor 121 not only remains able to reach and the first wire
131st, second wire 132 forms the purpose of current loop, and further reduces required gold near electrical components 110
Belong to wire, it is helpful for reducing parasitic capacitance.Especially, distribution is wider in the semiconductor structure for earth terminal, for up to
Device under disclosing purpose to Fig. 1, the first conductor 121 can be excellent selections, significantly become because it goes without doing on processing procedure
It can just be realized under dynamic in any region that may be coupled to earth terminal by known bracing wire and diversion technology.
In addition, first wire 131, second wire 132 and first conductor 121 form at least one master of primary Ioops
Partly to refer to that the loop absolutely can be formed by first wire 131, the second wire 132 and first conductor 121,
For example, the loop that a triangle or similar three-sided configuration are formed.In other feasible embodiments, the first wire 131, it is somebody's turn to do
Second wire 132 and first conductor 121 can also be a parts for other polygons, now this at least a major part can
Can be 20 percent, 40,60 or 80 etc..In addition, as defined in the first wire 131, second wire 132
The plane that the primary Ioops plane in the loop can also get along well where the electrical components 110 is parallel, but can be according in design
Need to make the inclined of different angle.
It is noted that first wire 131 and second wire 132 can also be leading for arc line type or other patterns
Line, all it is in the range of this embodiment covers as long as certain effect can be reached with first conductor 121 cooperation.
Under Figure 1A enlightenment, Figure 1B is referred to, it is the device for the changeable parameters that Figure 1A is observed by another angle
The preferred embodiment of 100 parameter adjustment controls.In this embodiment, the device 100 of the changeable parameters represents a variable inductance.
One inductance adjusting apparatus 111 of the variable inductance 100, which includes one, has the conductor 121 of a grounding characteristics.The inductance adjusting apparatus
111 also include a single reticular structure 130, and it includes a grid 115, and the grid is formed by two wires 131,132.Wherein,
Respectively the wire 131,132 is electrically connected to the conductor, and forms primary Ioops with the conductor, to adjust the one of the variable inductance 100
Inductance value.
Especially, the inductance adjusting apparatus 111 more can be included to have and led with the another of identical or different grounding characteristics of conductor 121
Body 122.And the single reticular structure 130 includes another grid 116.Wherein, respectively the grid 115,116 all by two wires 131,
132 pairs and 133,134 pairs formation, and such wire and be electrically connected and form secondary circuit in conductor 121,122, to adjust
One inductance value of the variable inductance.Obvious, this Figure 1B embodiment can be substantially effectively by single reticular structure 130
Under the area surrounded using such loop, different grids 115,116 shapes, size, position is selected according to different demands
Change the inductance value of an inductance.And the increased quantity of parasitic capacitance number dominated is still considerably less, in Figure 1B embodiment
In can be four even less.
Fig. 1 C are that further the device of improvement changeable parameters is another preferred according to the concept of Figure 1A and Figure 1B embodiment
The stereogram of embodiment.Inductance 100 can more include another inductance adjusting apparatus 112, and it includes another single reticular structure 140
(exemplified by radial) is in parallel with single reticular structure 130.By taking semiconductor structure as an example, single reticular structure 130,140 can
With positioned at different metal levels, and by it is a plurality of in a manner of same or like perforation (Via) made of wire be electrically connected to each other.
Under this embodiment, the inductance value of inductance 100 can be adjusted jointly by single reticular structure 130,140, and realized more
Flexibly adjusted with careful inductance.Certainly, there is provided the parallel-connection structure of more single reticular structures will be helpful to realize more complicated
Inductance adjustment.
Fig. 2A is the top view of the preferred embodiment of the variable inductance of this case one.One has the variable of single reticular structure 230
Inductance 200 has an inductance 210 and its inductance value.The inductance adjusting apparatus 211 of the variable inductance 200 is also comprising one first control
Element 241 is electrically connected between one first wire 231 and one first conductor 221 optionally to control from the first wire 231
It flow to the electric current of first conductor 221.The variable inductance 200 is also electrically connected to this comprising one second control element 242 and second led
The electric current of first conductor 221 is flow to from the second wire 232 optionally to control between line 232 and first conductor 221.
The variable inductance 200 is also comprising second conductor 222 with one second grounding characteristics.Wherein, second conductor 222 electrically connects
Between first wire 231 and second wire 232 and with first wire 231, second wire 232 and first conductor
221 form primary Ioops, to adjust the inductance value.Wherein, the first control element 241 and the second control element 242 can be that electricity is brilliant
One of body, CMOS field effect electric crystal, variable capacitance and diode.This embodiment passes through the first control element
241 and second control element 242 more improve Figure 1A and Figure 1B device.
In detail, it is assumed that the first control element 241 and the second control element 242 are electric crystal, a preferable inductance adjustment
The control method of device 211 is step 1：The electric crystal 241,242 is opened, single reticular structure 230 is produced because of eddy current effect
A raw induced-current 290, and flowed in the loop of the single reticular structure 230 and change inductance value.Step 2：Close the electricity
Crystal 241,242, single reticular structure 230 is not formed the loop of conducting, and do not form induced-current substantially, inductance value
Hardly change.In this way, energy is more flexible and flexibly makes careful adjustment to the inductance value of inductance 210.In another embodiment
In, one of the first control element 241 or the second control element 242 can also be omitted and be directly electrically connected to the first conductor
221.Note, do not have sequential priority the step of this control method, art personage can be according to phase
Same inventive concept makees any and appropriate conversion.
In addition, if the first control element 241 and the second control element 242 can also receive approximate effect using variable capacitance
Fruit.For example, in alternating current circuit, when adjusting to bulky capacitor value, when the variable capacitance is opened equivalent to switch or is closed circuit；Work as tune
During the whole value to small capacitances, when the variable capacitance is closed or opened a way equivalent to switch.
Must be it is specifically intended that the size of single reticular structure 230 can need to be changed with different designs.Example
Such as, the area in its loop formed can cover 25 percent, 50, the 70 of the area of 200 coil of variable inductance 220
Five or 100.These different percentages be rely on device required for accuracy and fineness depending on.Certainly, percent
40 to 60 can preferably select, because its fineness is up to appropriate depth and can be compatible with single reticular knot
Other more complicated designs of structure 230.
In addition, inductance 210 can be the different shape such as substantially circular, quadrangle or octagon or right
Title or asymmetrically shape.
Fig. 2 B are the top views of the preferred embodiment of a single reticular structure of the variable inductance of this case one.Assuming that Fig. 2A's should
Inductance 210 is symmetrical and including an axis 212, and the inductance interior zone is divided into symmetrical one left area by the axis 212
Domain and a right region.The single reticular structure 230 is also alignd and parallel including an axis wire 237 with the axis 212.And this
One wire 231 and second wire 232 respectively should with the direction warp vertical with the axis wire 237 by the axis wire 237
Left region and right region extend to the inductance perimeter.Therefore, single reticular structure 230 can be by the single reticular structure
230 points are symmetrical two circulations.The inductance adjusting apparatus 211 more may include that one the 3rd control element 243 is electrically connected to first
Between wire 231 and second conductor 222, and one the 4th control element 244 is connected to the second wire 232 and second conductor
Between 222.
Under Fig. 2 B configuration, the control method of a preferable inductance adjusting apparatus 211 is step 1：Adjust electric crystal lock
Pole G1, G2, G3, G4, to open the electric crystal 241,242,243 and 244, and single reticular structure 230 is set to be produced because of eddy current effect
A raw induced-current is 293 and 294.Now because two circulations are adjusted to the inductance value of inductance 210 simultaneously, inductance changes
Variable is maximum.Step 2：Electric crystal gate is adjusted to G1, G2 or electric crystal gate to G3, G4, with open electric crystal to 241,
242 or electric crystal to 243,244 one pair of which, and close another pair electric crystal at least one, make single reticular structure 230
Form the left loop of conducting or right loop.Now due to only having a circulation to be adjusted the inductance value of inductance 210, inductance
Knots modification is smaller.Step 3：Electric crystal gate is adjusted to G1, G2 or electric crystal gate to G3, G4, with close electric crystal to 241,
242 at least one electric crystal and close electric crystal to 243,244 electric crystal at least within, make single reticular structure
230 when not forming the loop of conducting, and does not form induced-current substantially, and inductance value also hardly changes.Note, this control
The step of method processed, does not have sequential priority, and art personage can make any according to identical inventive concept
And the conversion of appropriateness.
In one embodiment, conductor 221 and 222 can be connected or separated circuit connection.It is and special at another
In different embodiment, it is convenient to omit axis wire 237 and reach different inductance value Adjustment effect.
Especially, in the case where Fig. 2 B single reticular structure 230 is symmetrical, the electric current of axis wire 237 is flowed through
295 and 296 can cancel each other, and make axis wire 237 just as open circuit.It is sufficient theoretical with it is all provable in practice, make electricity
The symmetrical single reticular structure 230 that stream 295 and 296 can cancel each other can avoid phase noise.In other words, important discovery herein
Under, the setting of axis wire 237 can be more flexible and flexibly by right in the case where not influenceing 200 original efficiency of variable inductance
Electric crystal makes finer adjustment to 241,242,243 and 244 control to the inductance value of inductance 210.
In addition, the electric crystal can be electrically connected to 241,242,243 and 244 by a digital control circuit (not shown)
To lock level G1, G2, G3 and G4 of such electric crystal, such electric crystal is carried out according to different demands in a manner of digitized
Control to change the inductance value of inductance 210.
In another embodiment, control element 241,242,243 and 244 any of which can also be omitted and direct electricity
It is connected to conductor 221 or conductor 222.In addition, first wire 231 and second wire 232 are preferably a straight wire and by this
The interior zone of inductance extend straight to the inductance perimeter cause first wire and second wire respectively with this
One conductor electrically connects.
Fig. 3 A are the top views of the preferred embodiment for the device for having a variable inductance according to one under foregoing conception.One tool
The device 300 for having a variable inductance, which includes one, has the inductance 310 of an inductance value.The device 300 also has one first comprising one
First conductor 321 of grounding characteristics and second conductor 322 with one second grounding characteristics.The device 300 also includes one
First single reticular structure 330, it includes one first grid 315.First grid 315, which includes one first wire 331, to be passed through
First control element 341 is electrically connected to first conductor 321, and one second wire 332 is electrically connected to first wire 331 simultaneously
First conductor 321 can be electrically connected to by the second control element 342.Wherein, first wire 331, second wire 332 with
And first conductor 321 formation, one first loop is corresponding with the inductance 310, to adjust the inductance value.First single reticular knot
Structure 330 also includes one second grid 316.Second grid 316 is electrically connected to first wire 331 including a privates 333
And second conductor 322 can be electrically connected to by the 3rd control element 343, and a privates 334 are electrically connected to the 3rd
Wire 333 simultaneously can be electrically connected to second conductor 322 by the 4th control element 344, wherein, the privates the 333, the 4th is led
Line 334 and second conductor 322, one second servo loop of formation are corresponding with the inductance 310, to adjust the inductance value.
In one embodiment, conductor 321,322,323 and 324 can be same conductor, is electrically connected to each other by perforation
Circuit or different circuits, or positioned at identical or different semiconductor metal layer.For example, these conductors can electrically connect
VDD, VSS are supplied in power supply, or is even connected to retaining ring.
Fig. 3 B are the top views for the 330 different embodiments of the first single reticular structure being directed in Fig. 3 A.With single reticular knot
Exemplified by structure 330a, privates 333a and second wire 332a can be same wire.Now, first conductor 321 is with being somebody's turn to do
Second conductor 322 may be electrically connected to same earth terminal.Single reticular structure 330b is a kind of radial structure, and 330c is then
It is the single reticular structure of another different shape.
Please refer to Fig. 3 A and Fig. 3 C.The inductance 310 of device 300 with a variable inductance may include an at least line
Circle 320, it surrounds out a closure plane, and it defines an xy- planes, and the xy- planes are separately and flat with the closure plane
Go and there is a center 313.In addition, a z-axis passes through the center 313 and vertical with the xy- planes.First grid 315 also wraps
Include a clinoplain 316 as defined in first wire 331 and second wire 332, and a sloping shaft 317 and the inclination
Plane 316 is vertical, is in a sloping shaft angle theta with the z-axis from positive z-axis toward xy- planar offsetsi, the wherein θiBetween minus 90 degree
To positive between 90 degree, or preferably between minus 45 degree to positive between 45 degree.This example illustrates according to special design need
Ask, the first single reticular structure 330 can be not necessarily parallel with inductance.But, it is contemplated that processing procedure under symmetrical structure
The stability of simplicity and efficiency, θiFor 0 degree when be still to preferably select, and if single reticular structure 330 can be along Fig. 3 A y- axles
Symmetrical kenel will more preferably be selected.Especially, in the case where single reticular structure 330 is radial structure design, if selection
Circular inductor 310 is arranged in pairs or groups with single reticular structure 330 and forms the structure of circular symmetry formula, and variable inductance 300 will be optimal selection
One of.(seen because each wire of single reticular structure 330 is all mutually orthogonal with the coil 320 of inductance 310 by top view
It), and it is minimum with the overlapping area of coil 320 to cause single reticular structure 330 overall, the parasitic capacitance of formation is also minimum, Q values
Performance can be lifted.
In θiIn the case of not equal to 0 degree, at least two ways can be reached.The first is to use MEMS
(MEMS) processing procedure is reached.The second way, then it is mainly used in logic circuit processing procedure, its implementation is similar to Fig. 1 C, adopts
With a plurality of spatially gradually single reticular structures of layer of a plurality of metal layer stacks, then with perforation to be connected with each other this plurality of single
Network structure, in the form of stair-stepping in a plurality of metal interlevels formation one.
In another preferred embodiment, there is the xy- planes x- axles to be put down by the center 313 and positioned at the xy-
On face, and a y- axles pass through the center 313, in the xy- planes and vertical with the x- axles.And first grid 315 is more
It may include that one first longitudinal axis straight wire 335 from positive y- axles toward negative x- axle offsets is in one first longitudinal axis angle theta with the y- axlesv1, and
With one first lattice point P1 and one second lattice point P2.In addition, first wire 331 can be one first transverse axis straight wire by positive x-axis
It is in one first transverse axis angle theta with the x- axles toward positive y- axle offsetsh1, and from first lattice point P1 extend and with first conductor
321 electrical connections, second wire 332 are one second transverse axis straight wire from positive x-axis toward positive y- axle offsets and with the x- axles in one the
Two transverse axis angle thetash2, and extend from second lattice point and electrically connected with first conductor.
Likewise, second grid more may include it is separately and parallel or not parallel with first longitudinal axis straight wire 335
One second longitudinal axis straight wire 336.Second longitudinal axis straight wire 336 is in one second with the y- axles from positive y- axles toward negative x- axle offsets
Longitudinal axis angle thetav2, and there is one the 3rd lattice point P3 and one the 4th lattice point P4.The privates 333 can be one the 3rd transverse axis straight wire
It is in one the 3rd transverse axis angle theta with the x- axles from negative x- axles toward negative y-axis skewh3, and extend from the 3rd lattice point P3 and with this
Two conductors 322 electrically connect；The privates 334 be one the 4th transverse axis straight wire from negative x- axles toward negative y-axis offset and with the x- axles
In one the 4th transverse axis angle thetah4, and extend and electrically connected with second conductor, the wherein θ from the 4th lattice point P4v1、θv2、θh1、
θh2、θh3And θh4Between minus 90 degree to positive between 90 degree, or preferably between minus 45 degree to positive between 45 degree.This embodiment is said
Understand according to special design requirement, the planar structure of the first single reticular structure 330 is very multifarious.But consider
The stability of the simplicity of processing procedure and efficiency under to symmetrical structure, θv1、θv2、θh1、θh2、θh3And θh4For 0 degree when be still optimal
One of selection.
In addition, the longitudinal axis straight wire 335,336 can further be electrically connected to control element 345,346,347 and 348
One of them is directly electrically connected to the conductor 323,324 for having grounding characteristics.Under such embodiment, the first of Fig. 3 A is single
Network structure 330 extremely can flexibly and flexibly be made not by the control of a digital control circuit to the inductance value of inductance 310
With the adjustment of combination.
In another embodiment, one second single reticular structure 360, it has one with the first single reticular structure 330
Structure that is identical or differing, and it is separately and parallel or not parallel so that and the inductance 310 is located at the first single reticular structure
And further adjusting the inductance value between the second single reticular structure.Adjustment of this embodiment except inductance can be increased
Outside scope, moreover it is possible to by the first single reticular structure 330, the second single reticular structure 360, the inductance 310 respectively positioned at adjacent
Metal level.By taking semiconductor structure as an example, it can be formed at redistribution layer (Redistribution Layer), metal level respectively
The last layer of M11 layers and metal level M10 layers either inductance, using the top for being arranged in inductance as principle, will so can reach excellent
The configuration (generally wherein, there is dielectric layer, such as dielectric layer 11, dielectric layer 10 between each layer metal level in figure) of choosing.Its
Reason is that more its thickness of the metal level on upper strata is thicker in contemporary semiconductor structure, such as redistribution layer can be at 1.0 microns to 3.0
Between micron, M10 layers and M11 layers can be then between 1.0 microns to 4.0 microns.Relative, the thickness of the metal level of lower layer
But then between 0.05 to 0.5 micron.Therefore, upper metal layers are much smaller compared to the resistance of lower metal layer, if
Inductance 310 is located to the metal level of upper layer, it is possible to reduce unnecessary energy dissipation, and make the performance of Q values preferable.In addition,
The small resistor of upper metal layers, it can also make the induced-current for resulting from network structure 330,360 because of eddy current effect larger, such energy
Stronger magnetic flux is produced, can become apparent from the inductance value changes of inductance 310.The configuration of this embodiment is applied to this case institute
There is the embodiment of tool single reticular structure.
In a preferred embodiment, overlooked above the inductance 310, the first conductor 321 and second conductor 322
In the inductance perimeter, and first wire 331, second wire 332, the privates 333 and the privates 334
A respectively straight wire simultaneously extends straight to the inductance perimeter by the inductance interior zone, and first grid 315 and
The section that second grid 316 is covered to the interior zone is non-overlapping copies.On the one hand such benefit is to electrically connect
The wire of conductor 321,322 does not interfere with the inductive effects for the inductance interior zone for being used to carry out eddy current effect, on the other hand
The overlay area of grid 315,316 can also be made full use of, strengthens inductive effects.
In another preferred embodiment, the inductance 310 it is symmetrical and including an axis (such as with y- axles separately
And align), and the inductance interior zone is divided into symmetrical one left region and a right region.And the first single reticular structure
330 also include an axis wire (such as with y- overlapping of axles or θv1For 0 degree).First wire 331 and second wire 332 are distinguished
The inductance perimeter is extended to through the right region with a direction vertical with the axis wire by the axis wire, and this
Three wires 333 and the privates 334 are prolonged by the axis with the other direction vertical with the axis wire through the left region respectively
Extend the inductance perimeter.This embodiment is advantageous in that between the holding single reticular structure 330 of inductance 310 and first as far as possible
Symmetry, it can be preferable that the frequency characteristic of such device 300, Q values, phase noise performance or signal, which synchronously transmit performance,.
Referring again to Fig. 3 C.This has the device 300 of a variable inductance, and can also include one includes the metal of the inductance 310
Layer (for example, M11), a ground plane (for example, M1), first below metal level M11 and including the tool grounding characteristics leads
Body 321, control element 341 and second conductor 322, control element 343 (control element 342 that also may include not show,
344th, 345,346,347 and 348).The device 300 can also include one first retaining ring (Guard Ring) 350, between the metal
Between layer M11 and ground plane M1 and it is electrically connected to ground plane M1.Wherein, first wire 331, second wire 332 are distinguished
It is electrically connected to first retaining ring 350.This embodiment has certain importance, because the variation on processing procedure can be reduced.Specifically
It, although introducing the first conductor 321 and second conductor 322 to lift the idea of efficiency, this might mean that energy on processing procedure
Change, such as perforation wire is set up near single reticular structure 330, be electrically connected to the second conductor 322, the control element of lower floor
343rd, 344 etc..But if the first retaining ring 350 for being electrically connected to ground layer in semiconductor structure can be utilized, then can be with
Directly the wire 331,332 wires that need to be grounded directly are moved on the first retaining ring 350 near the first single reticular structure 330
It can just achieve the goal.But in a preferred embodiment, the first retaining ring 350 is the large retaining-ring for connecting several metal levels,
Such as link up from metal level M11 by the plural metal stack of each layer in lower section to ground plane M1, such benefit is in the first shield
The thickness of ring 350 is thicker, and resistance is smaller, therefore to single reticular structure 330 to shadow caused by the inductance adjustment amplitude of inductance 310
Sound is also smaller.It is noted that metal level M11 only represents preferable retaining ring position, in other embodiments metal level M6, M7,
M8, M9 or M10 even redistribution layer are all feasible.The configuration of this embodiment has single reticular knot suitable for this case is all
The embodiment of structure.
In another preferred embodiment, the metal level also wraps the inductance 310 including one second retaining ring 551.Second
The purpose of retaining ring 351 is that avoiding inductance 310 from being closed effect by other electrical components or the parasitism of wire or lotus root is influenceed.In addition,
Among the embodiment using the second single reticular structure 360, second retaining ring 351 can also be used as the second single net of electrical connection
Shape structure 360 to one has the medium of grounding characteristics conductor (such as conductor 321,322 or other conductors).It is preferable real at another
Apply in example, first retaining ring 350 and second retaining ring 351 can also be same retaining rings.The configuration of this embodiment is applied to
All embodiments with plural single reticular structure of this case.
In another embodiment, conductor 322,321 can be located at different metal layer (for example, M1 and M2) respectively, each other
Between can also then be interconnected by perforation.
Fig. 4 is the embodiment for the control element connection single reticular structure that can be derived according to the content of foregoing exposure.
Such as single reticular structure 430a is connected to two CMOS fields effect electric crystal CMOS1 and CMOS2 output end 1 and defeated
Go out end 2 and inputted by a control signal by input 1 and input 2, determine single grid 430a is formed returning for conducting
One of road and optionally connected VDD or VSS in AC ground.But in other embodiments, one of VDD or VSS or complete
Portion can also use GND ends or signal input end in other wiring, such as circuit.
In addition, single reticular structure 430b is the embodiment for electrically connecting variable capacitance C1 and C2, its principle utilized be compared with
Big electric capacity is short circuit in high frequency, and less electric capacity is in the high frequent characteristic that can be considered open circuit.Single reticular structure 430c is then
The diode D1 and D2 of different directions connection embodiment are electrically connected to, but similarly, can also be fitted under different design requirements
Connected with the diode of equidirectional.Outside Fig. 4 embodiment, each single reticular structure can also have more a plurality of wire, any
Wire can optionally be electrically connected to a control element or be directly electrically connected to direct current or AC ground.
Fig. 5 is the other embodiments of single reticular structure.Wherein, single reticular structure 530a, 530b and 530c can lead to
The wire electrical connection control element or earth terminal of the left and right sides are crossed, single reticular structure 530d can leading by three sides of upper left and right
Line electrically connects control element or earth terminal, and 530e then can electrically connect control element or ground connection by the wire of four sides up and down
End., can be with if width W and thickness the (not shown) increase or length L reductions of wire in addition, theoretical provable with practice
Make the adjustment amplitude of inductance larger, because being that the decline of resistance value causes single reticular structure because of sensing caused by eddy current effect
Electric current is stronger, so that it may the adjustment amplitude of inductance is effectively lifted.In addition, tune of the lead material of single reticular structure for inductance
View picture degree also has an impact, copper conductor electric conductivity is good and cost it is relatively low be preferably to select.The width W of single reticular structure can be
Between 1 micron to 30 microns, thickness can be between 0.05 micron to 5 microns.The configuration of Fig. 5 all embodiments is applied to this
All embodiments with single reticular structure of case.
Fig. 6 A are the preferred embodiments of a variable inductance.One variable inductance 600 includes a symmetrical inductance 610,
One symmetrical single reticular structure 630, and a retaining ring 650.Wherein, the left and right sides of single reticular structure 630 has five
Totally eight are formed to wire (631l, 631r), (632l, 632r), (633l, 633r), (634l, 634r) and (635l, 635r)
Grid.And respectively the wire all by switch (641l, 641r), (642l, 642r), (643l, 643r), (644l, 644r) and
(645l, 645r) forms loop with earth terminal.In addition, parameter set be single reticular structure 630 conductor width it is micro- as 5
Rice, thickness are 2.8 microns.In the first state, switch for (OFF, OFF), (OFF, OFF), (OFF, OFF), (OFF, OFF) and
(OFF,OFF).Fig. 6 B are the experimental datas of the variable inductance 600.Can be seen that by Fig. 6 B, the equivalent inductance value of inductance 610 because
The single reticular structure 630 is nominal inductance value, Q values are then nominal Q values without conducting loop is formed.In the second condition, open
Close as (ON, ON), (OFF, OFF), (OFF, OFF), (OFF, OFF) and (ON, ON).In a third condition, switch for (ON,
ON), (OFF, OFF), (ON, ON), (OFF, OFF) and (ON, ON).Under the 4th state, switch for (ON, ON), (ON, ON),
(ON, ON), (ON, ON) and (ON, ON).It can be seen that by Fig. 6 B, the equivalent inductance value of inductance 810 is with single reticular structure 630
The number increase in conducting loop is formed, inductance value fall is bigger, and Q values also decline simultaneously.Change for Q values, Ke Yigen
According to Q=ω Leq/ReqRelation understood, wherein, ω is angular frequency, and Leq is equivalent inductance, and Req is the equivalent electric of concatenation
Resistance.Obviously, with Leq decline, Q values also can and then decline, and according to experimental result, there is positive and negative 10% knots modification, and can be because
Different line widths have different characteristics.
Fig. 6 C are the experimental datas compared between the preferred embodiment of different variable inductances.In this experiment, with the inductance 610
In the 4th status switch it is (ON, ON), (ON, ON), (ON, ON), (ON, ON) and (ON, ON) with the single reticular structure 630
Exemplified by.Under the first width, the conductor width of single reticular structure 630 is 5 microns.Under the second width, single reticular structure 630
Conductor width is 10 microns.Under the 3rd width, the conductor width of single reticular structure 630 is 15 microns.It will be apparent that with wire
Width rises, and the equivalent resistance of concatenation declines, and because the electric current of eddy current effect sensing is stronger, the adjustment amplitude to inductance 610 is got over
Greatly, equivalent inductance Leq decline, Q values also and then decline.
Fig. 7 is referred to, it is excellent for the voltage control oscillator of this case one (Voltage Controlled Oscillator)
Select the schematic diagram of embodiment.One voltage-controlled oscillator (VCO) 700 includes an inductance 710 and a single reticular structure 730.The voltage-controlled oscillator (VCO)
700 are also located at the lower section of the first metal layer 781 comprising a first metal layer 781 and a second metal layer 782.The voltage-controlled concussion
Device 700 also includes an inductance capacitance resonant cavity 701, and it includes the inductance 710 and capacitance group is electrically connected to the inductance 710, should
Capacitance group is selected from the group being made up of fixed capacity (for example, C11, C12), variable capacitance (for example, C21, C22) and combinations thereof
Group.Wherein, the inductance 710 is located at the first metal layer 781 and the capacitance group is located at the second metal layer 782.In this embodiment
In, the single reticular structure 730 for having used this case to be proposed is adjusted to the inductance value of inductance 710.Because with processing procedure
Progress, the equivalent resistance that the electric capacity (such as electric capacity of golden oxygen half of M1 or M2 layers) formed in lower metal layer 782 is met with is (such as
R1, R2) resistance value be at a relatively high, this causes the past by changing variable capacitance C21, C22 to adjust voltage-controlled oscillator (VCO) 700
Frequency characteristic becomes or the method for Q values is not imitated increasingly.Therefore, the inductance in the upper metal layers with less resistive is aligned
710 are adjusted as alternative solution.Can be with trickleer adjustment capability and preferable frequency by single reticular structure 730
Rate characteristic, Q values, phase noise performance, signal synchronously transmit performance to reach this purpose.
In another preferred embodiment, the capacitance group of the inductance capacitance resonant cavity 701 can be only by fixed capacity
(for example, C11, C12) is formed.This embodiment has its advantage, because in view of variable capacitance is for voltage-controlled oscillator (VCO) 700
The adjustment of frequency characteristic apply it is no longer favourable in more than 30GHz circuit designs or advanced process, can abandon or part abandon making
With variable capacitance (for example, C21, C22), and completely or part with inductance 710 and single reticular structure 730 formed can power transformation
Sense is instead.So can further it reduce because lower metal layer makes resistance is excessive caused to ask because of the progress of processing procedure
Topic.For example, can avoid the loss in series resistance R2 if C21, C22 is eliminated, the Q values of the voltage-controlled oscillator (VCO) 700 can be with
Lifted.
Terms such as " connections " or " coupling " that uses in the present case covers the link change of broad sense.For example, in circuit
Can be directly or indirectly connected with other electrical components, and directly or indirectly be coupled with other electrical components.More than
The loop that mentioned network structure or similar structures are formed, multiple layer metal storehouse is may each be, centre is by one or more phases
With or approximate perforation technology electrical connection, and be positioned over induction structure over and under or oblique upper and obliquely downward.
It is described above to describe the present invention, the scope being not intended to limit the present invention in detail using preferred embodiment, therefore know this
The personage of skill should be able to understand, suitably make change and adjustment slightly, where the main idea that will not lose the present invention, also not depart from
The spirit and scope of the present invention, former capital should be regarded as the further status of implementation of the present invention.Your juror's explicit example for reference is sincerely asked, and prays favour
Standard, it is to praying.
This case as the personage Ren Shi craftsman for being familiar with this technology think and be it is all as modification, right neither de- this case claim
Be intended to Protector.
【Symbol description】
The electrical components of device 110 of 100 changeable parameters
The wire of conductor 131,132 of 121 tool grounding characteristics
191,192 parasitic capacitances
The grid of 111,112 inductance adjusting apparatus 115,116
The single reticular structure of conductor 130,140 of 121,122 tool grounding characteristics
The parasitic capacitance of 131,132,133,134 wire 191,192
The inductance of 200 variable inductance 210
The axis of 211 inductance adjusting apparatus 212
220 coils
221st, the single reticular structure of conductor 230 of 222 tool grounding characteristics
231st, the axis wire of 232,233,244 wire 237
241st, 242,243,244 control element
290th, 293,294,295,296 induced-current
G1, G2, G3, G4 electric crystal gate
300 have the inductance of device 310 of variable inductance
313 centers 315,316 grids
320 coils
321st, the conductor of 322,323,324 tool grounding characteristics
330th, 330a, 330b, 330c, 360 single reticular structures
331st, 332,333,334,335,336,337,338 wire
331a, 332a, 333a, 334a, 337a wire
331b, 332b, 333b, 334b, 337b wire
331c, 332c, 333c, 334c, 337c wire
341st, 342,343,344,345,346,347,348 control element
350th, 351 retaining ring
θ h1, θ h2, θ h3, θ h4 transverse axis angle theta i sloping shaft angles
θ v1, θ v2 longitudinal axis angle P1, P2, P3, P4 lattice points
430a, 430b, 430c single reticular structure
530a, 530b, 530c, 530d, 530e single reticular structure
The inductance of 600 variable inductance 610
630 single reticular structures
631l, 631r, 632l, 632r, 632l, 632r, 634l, 634r, 635l, 635r wire
641l, 641r, 642l, 642r, 643l, 643r, 644l, 644r, 645l, 645r are switched
650 retaining rings
The inductance of 700 voltage-controlled oscillator (VCO) 710
730 single reticular structures 781,782 metal levels
C11, C12 fixed capacity C21, C22 variable capacitance
R1, R2 equivalent resistance
Claims (20)
1. one has the device of a variable inductance, comprising：
One inductance, it has an inductance value；
One first conductor, there are one first grounding characteristics；
One second conductor, there are one second grounding characteristics；
One first single reticular structure, it includes：
One first grid, it includes：
One first wire is electrically connected to first conductor；And
One second wire is electrically connected to first wire and first conductor, wherein, first wire, described second are led
Line and first conductor formation, one first loop are corresponding with the inductance, to adjust the inductance value；And
One second grid, it includes：
One privates is electrically connected to first wire and second conductor；And
One privates are electrically connected to the privates and second conductor, wherein, the privates, privates with
And one second servo loop of the second conductor formation is corresponding with the inductance, to adjust the inductance value.
2. device according to claim 1, wherein, first grid is also electrically connected to described including a control element
Between one wire and first conductor, and the control element is an electric crystal, a CMOS field effect electric crystal, one
One of variable capacitance and a diode.
3. device according to claim 1, wherein, the privates and second wire are same wire, and institute
State the first conductor and be electrically connected to same earth terminal with second conductor.
4. device according to claim 1, wherein：
The inductance includes：
An at least coil, it surrounds out a closure plane, and it defines an xy- planes, and the xy- planes and the closing are flat
Face is separately and parallel and have a center；And
One z-axis passes through the center and vertical with the xy- planes；
First grid also includes：
A clinoplain as defined in first wire and second wire；And
One sloping shaft is vertical with the clinoplain, and axle clamp is tilted in one with the z-axis from positive z-axis toward xy- planar offsets
Angle θi, wherein the θiBetween minus 90 degree to positive between 90 degree.
5. device according to claim 1, wherein：
The inductance includes：
An at least coil, it surrounds out a closure plane, and it defines an xy- planes, and the xy- planes and the closing are flat
Face is separately and parallel and have a center；
One x- axles are by the center and in the xy- planes；And
One y- axles pass through the center, in the xy- planes and vertical with the x- axles；
First grid also includes：
One first longitudinal axis straight wire is in one first longitudinal axis angle theta with the y- axles from positive y- axles toward negative x- axle offsetsv1, and have
One first lattice point and one second lattice point；
First wire is that one first transverse axis straight wire is from positive x-axis toward positive y- axle offsets and horizontal in one first with the x- axles
Axle angle thetah1, and extend from first lattice point and electrically connected with first conductor；And
Second wire is that one second transverse axis straight wire is from positive x-axis toward positive y- axle offsets and horizontal in one second with the x- axles
Axle angle thetah2, and extend from second lattice point and electrically connected with first conductor；And
Second grid also includes：
First longitudinal axis straight wire；
The privates is one the 3rd transverse axis straight wire from bearing x- axles toward negative y-axis skew and with the x- axles in one the 3rd horizontal stroke
Axle angle thetah3, and extend from first lattice point and electrically connected with second conductor；And
The privates are one the 4th transverse axis straight wire from bearing x- axles toward negative y-axis skew and with the x- axles in one the 4th horizontal stroke
Axle angle thetah4, and extend from second lattice point and electrically connected with second conductor, wherein the θv1、θh1、θh2、θh3And
θh4Between minus 90 degree to positive between 90 degree.
6. device according to claim 5, wherein, first grid and second grid are located at the xy- planes
On, and the θv1、θh1、θh2、θh3And θh4It is all 0 degree.
7. device according to claim 5, wherein：
The first single reticular structure is also located in the xy- planes including one second longitudinal axis straight wire, vertical with described first
Axle straight wire is separately and parallel, and intersects at one the 3rd lattice with the 3rd transverse axis straight wire and the 4th transverse axis straight wire
Point and one the 4th lattice point.
8. device according to claim 5 also includes：
One second single reticular structure, it has an identical structure with the first single reticular structure, and separately and parallel,
So that the inductance adjusts between the first single reticular structure and the second single reticular structure to further
The inductance value.
9. device according to claim 1, wherein：
The inductance has an at least coil, and it surrounds out an inductance interior zone and defines an inductance perimeter；
First conductor and second conductor are located at the inductance perimeter；And
First wire, second wire, the privates and the privates are respectively a straight wire and by institute
State inductance interior zone and extend straight to the inductance perimeter, and first grid and second grid are to described
The section non-overlapping copies that interior zone is covered.
10. device according to claim 9, wherein：
The inductance is symmetrical and the inductance interior zone is divided into symmetrical one left area including an axis, the axis
Domain and a right region；
The first single reticular structure is also alignd and parallel including an axis wire with the axis；And
First wire and second wire are respectively by the axis wire with a direction vertical with the axis wire
The inductance perimeter is extended to through the right region；And
The privates and the privates are passed through by the axis with the other direction vertical with the axis wire respectively
The left region extends to the inductance perimeter.
11. device according to claim 1 also includes：
One the first metal layer, it is a redistribution layer；
One second metal layer, it is located at the lower section of the redistribution layer and an adjacent metal level；
The first single reticular structure is formed at the redistribution layer；And
The inductance is formed at the second metal layer.
12. device according to claim 1, is also included：
One metal level, including the inductance；
One ground plane, below the metal level and including first conductor and second conductor；And
One first retaining ring, between the metal level and the ground connection interlayer and the ground plane is electrically connected to, wherein described first
Wire, second wire are respectively electrically connected to first retaining ring.
13. device according to claim 12, wherein, the metal level also includes one second retaining ring and wraps the inductance.
14. device according to claim 1, wherein, described device is a voltage-controlled oscillator (VCO), and the voltage-controlled oscillator (VCO) is also
Comprising：
One the first metal layer；
One second metal layer is located at below the first metal layer；And
One inductance capacitance resonant cavity, including：
The inductance；And
One electric capacity is electrically connected to the inductance, and the electric capacity is selected from and is made up of a fixed capacity, a variable capacitance and combinations thereof
Group, wherein, the inductance is located at the first metal layer and the electric capacity is located at the second metal layer.
15. device according to claim 1, wherein, described device is a voltage-controlled oscillator (VCO), and the voltage-controlled oscillator (VCO) is also
Comprising：
One the first metal layer；
One second metal layer is located at below the first metal layer；And
One inductance capacitance resonant cavity, it is made up of the inductance and the fixed capacity for being electrically connected to the inductance, wherein, institute
State that inductance is located at the first metal layer and the fixed capacity is located at the second metal layer.
16. an inductance adjusting apparatus of a variable inductance includes：
One first conductor, there are a grounding characteristics；And
One single reticular structure includes a grid, and the grid is formed by two wires, wherein each wire is electrically connected to
First conductor, and primary Ioops are formed with first conductor, to adjust an inductance value of the variable inductance,
The inductance adjusting apparatus also includes：
An at least conductor,RespectivelyWith an at least grounding characteristics and including first conductor；And
The single reticular structure includes at least two grids, and described two grids include the grid, wherein：
Each at least two grid is all formed by least two wires, and at least two wires include two wires
And be electrically connected in an at least conductor, and at least two loops are formed with an at least conductor, it is described to adjust
One inductance value of variable inductance.
17. an inductance adjusting apparatus according to claim 16, is also included：
Another single reticular structure is parallel to the single reticular structure, described in being adjusted jointly with the single reticular structure
Inductance value, wherein, another single reticular structure includes another at least two grid, wherein, each described another at least two
Grid is formed by another at least two wire, and another at least two wire includes another one or two of wire and is electrically connected
In described two wires.
18. the device of a changeable parameters, comprising：
One electrical components, there is an electrical parameter；
One first conductor, there are one first grounding characteristics；
One first wire is electrically connected to first conductor；And
One second wire is electrically connected to first wire and first conductor, wherein, first wire, described second are led
Line and first conductor form an at least major part for primary Ioops, to adjust the electrical parameter, and
First wire and second wire are respectively a straight wire and extend straight to inductance by inductance interior zone
Perimeter causes first wire and second wire to be electrically connected respectively with first conductor.
19. the device of changeable parameters according to claim 18, wherein the electrical components be an inductance and it is described electrically
Parameter is an inductance value, and described device also includes：
One first control element is electrically connected between first wire and first conductor optionally to control from
One wire flow to the electric current of first conductor；
One second control element is electrically connected between second wire and first conductor optionally to control from
Two wires flow to the electric current of first conductor；And
One second conductor, there are one second grounding characteristics, wherein, second conductor is electrically connected to first wire and described
At least primary Ioops are formed between second wire and with first wire, second wire and first conductor, are used
To adjust the inductance value.
20. the device of changeable parameters according to claim 18, wherein the electrical components be an inductance and it is described electrically
Parameter is an inductance value, and described device also includes：
One first control element is electrically connected between first wire and first conductor optionally to control from
One wire flow to the electric current of first conductor；And
One second control element is electrically connected between second wire and first conductor optionally to control from
Two wires flow to the electric current of first conductor, wherein：
The inductance has an at least coil, and it surrounds out an inductance interior zone and defines an inductance perimeter；And
First conductor is located at the inductance perimeter.
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| CN201410259442.8A CN105304268B (en) | 2014-06-11 | 2014-06-11 | Device, variable inductance and the device with the variable inductance of changeable parameters |
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| CN112002539B (en) * | 2020-08-31 | 2021-04-13 | 北京力通通信有限公司 | Integrated inductor and integrated circuit capable of reducing far-end electromagnetic radiation |
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| CN104733427A (en) * | 2013-12-18 | 2015-06-24 | 台湾积体电路制造股份有限公司 | Varainductor having a spiral inductor, voltage controlled oscillator including the varainductor, and phase locked loop including the varainductor |
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| CN101582322B (en) * | 2008-05-12 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| JP2011119443A (en) * | 2009-12-03 | 2011-06-16 | Toshiba Corp | Variable spiral inductor and semiconductor integrated circuit device |
| US8963674B2 (en) * | 2010-12-20 | 2015-02-24 | Mediatek Singapore Pte. Ltd. | Tunable inductor |
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| CN104733427A (en) * | 2013-12-18 | 2015-06-24 | 台湾积体电路制造股份有限公司 | Varainductor having a spiral inductor, voltage controlled oscillator including the varainductor, and phase locked loop including the varainductor |
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