CN105283975B - 用于离子装置的磁铁以及离子装置 - Google Patents

用于离子装置的磁铁以及离子装置 Download PDF

Info

Publication number
CN105283975B
CN105283975B CN201480033457.0A CN201480033457A CN105283975B CN 105283975 B CN105283975 B CN 105283975B CN 201480033457 A CN201480033457 A CN 201480033457A CN 105283975 B CN105283975 B CN 105283975B
Authority
CN
China
Prior art keywords
coolant fluid
magnet
annular
core element
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480033457.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN105283975A (zh
Inventor
斯卡特·巴洛克拉夫
詹姆士·S·贝福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN105283975A publication Critical patent/CN105283975A/zh
Application granted granted Critical
Publication of CN105283975B publication Critical patent/CN105283975B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00Magnets
    • H01F7/06Electromagnets; Actuators including electromagnets
    • H01F7/20Electromagnets; Actuators including electromagnets without armatures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • H01J37/1474Scanning means
    • H01J37/1475Scanning means magnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/08Cooling; Ventilating
    • H01F27/10Liquid cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • H01J2237/1526For X-Y scanning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/303Electron or ion optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31701Ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
CN201480033457.0A 2013-06-14 2014-06-13 用于离子装置的磁铁以及离子装置 Active CN105283975B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361835089P 2013-06-14 2013-06-14
US61/835,089 2013-06-14
US13/966,611 US9177708B2 (en) 2013-06-14 2013-08-14 Annular cooling fluid passage for magnets
US13/966,611 2013-08-14
PCT/US2014/042321 WO2014201363A1 (en) 2013-06-14 2014-06-13 Annular cooling fluid passage for magnets

Publications (2)

Publication Number Publication Date
CN105283975A CN105283975A (zh) 2016-01-27
CN105283975B true CN105283975B (zh) 2018-05-04

Family

ID=52018423

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480033457.0A Active CN105283975B (zh) 2013-06-14 2014-06-13 用于离子装置的磁铁以及离子装置

Country Status (6)

Country Link
US (2) US9177708B2 (https=)
JP (1) JP6429407B2 (https=)
KR (1) KR102161231B1 (https=)
CN (1) CN105283975B (https=)
TW (1) TWI624856B (https=)
WO (1) WO2014201363A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
KR102500059B1 (ko) 2017-11-07 2023-02-14 갈리움 엔터프라이지즈 피티와이 엘티디 매립된 활성화된 p-(Al,In)GaN 층
CN110300487A (zh) * 2019-07-12 2019-10-01 兰州科近泰基新技术有限责任公司 一种多通道冷却真空四极磁铁装置
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system
CN111601449B (zh) * 2020-05-28 2023-01-10 兰州科近泰基新技术有限责任公司 真空内超大型四极透镜的制造方法
US12100541B2 (en) * 2020-09-14 2024-09-24 Intel Corporation Embedded cooling channel in magnetics
JP2024046847A (ja) * 2022-09-26 2024-04-05 株式会社ダイヘン 高電圧電気部品

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1160287A (zh) * 1995-10-19 1997-09-24 易通公司 离子注入器中离子束形成的方法和装置
CN1813322A (zh) * 2003-06-26 2006-08-02 伊顿动力品质公司 混合空芯/磁芯电感器
CN1979749A (zh) * 2005-12-05 2007-06-13 北京中科信电子装备有限公司 均匀磁场平行束透镜系统
JP2007207755A (ja) * 2006-01-31 2007-08-16 Axcelis Technologies Inc 超伝導磁石を有するイオン注入機
CN101802980A (zh) * 2007-09-27 2010-08-11 瓦里安半导体设备公司 制造硅绝缘体晶圆的单晶圆植入机
CN201796681U (zh) * 2010-03-02 2011-04-13 Abb公司 电子装置的线圈结构
CN201820573U (zh) * 2010-04-26 2011-05-04 廊坊英博电气有限公司 带有冷却风道的谐波滤波电抗器
US20110126399A1 (en) * 2007-11-21 2011-06-02 Black And Decker Inc. Method of making an armature
CN102345942A (zh) * 2010-07-28 2012-02-08 通用电气公司 电磁铁组件的冷却系统

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB167916A (en) * 1920-06-12 1921-08-25 Giulio Schroeder Improvements in electrical transformers
JPS56108216U (https=) * 1980-01-21 1981-08-22
US4883968A (en) 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source
JP3231342B2 (ja) * 1991-01-30 2001-11-19 株式会社日立製作所 電磁コイル
JPH04323811A (ja) * 1991-04-23 1992-11-13 Toshiba Corp ギャップ付鉄心形ガス絶縁リアクトル
JPH05190345A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ギャップ付鉄心形リアクトル
JPH0864426A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 静止誘導電気機器
AU748878B2 (en) * 1997-12-09 2002-06-13 Imi Vision Limited Valve
US6053241A (en) * 1998-09-17 2000-04-25 Nikon Corporation Cooling method and apparatus for charged particle lenses and deflectors
JP3979823B2 (ja) * 2001-07-31 2007-09-19 ギガフォトン株式会社 巻線機器および巻線機器を用いた高電圧パルス発生装置並びに高電圧パルス発生装置を備えた放電励起ガスレーザ装置
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
JP3767820B2 (ja) * 2003-01-22 2006-04-19 第一高周波工業株式会社 磁束照射装置
GB2397691B (en) * 2003-01-24 2005-08-10 Leica Microsys Lithography Ltd Cooling of a device for influencing an electron beam
US7342236B2 (en) 2004-02-23 2008-03-11 Veeco Instruments, Inc. Fluid-cooled ion source
JP5154152B2 (ja) 2007-07-04 2013-02-27 ルネサスエレクトロニクス株式会社 昇圧電源回路
CN201077592Y (zh) * 2007-08-03 2008-06-25 乔士军 打包支架
JP4363479B2 (ja) * 2007-11-09 2009-11-11 トヨタ自動車株式会社 回転電機および駆動装置
JP2009164326A (ja) * 2008-01-07 2009-07-23 Fuji Electric Systems Co Ltd 磁気コア
US8022582B2 (en) 2008-12-30 2011-09-20 Caterpillar Inc. Liquid cooled permanent magnet rotor
EP2209128B1 (en) * 2009-01-20 2015-03-04 ABB Research Ltd. Gapped magnet core
JP2010258244A (ja) * 2009-04-27 2010-11-11 Toyota Industries Corp 誘導機器
EP2251875A1 (de) * 2009-05-16 2010-11-17 ABB Technology AG Transformatorkern
WO2012044445A1 (en) * 2010-10-01 2012-04-05 Franklin Electric Company, Inc. Solenoid pump
JP5854550B2 (ja) * 2011-06-09 2016-02-09 トクデン株式会社 静止誘導機器、金属管誘導加熱装置及びインボリュート鉄心冷却構造
CN103714948A (zh) * 2012-10-08 2014-04-09 佛山市国电电器有限公司 一种水冷变压器铁芯冷却方法
US9524820B2 (en) * 2012-11-13 2016-12-20 Raytheon Company Apparatus and method for thermal management of magnetic devices
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1160287A (zh) * 1995-10-19 1997-09-24 易通公司 离子注入器中离子束形成的方法和装置
CN1813322A (zh) * 2003-06-26 2006-08-02 伊顿动力品质公司 混合空芯/磁芯电感器
CN1979749A (zh) * 2005-12-05 2007-06-13 北京中科信电子装备有限公司 均匀磁场平行束透镜系统
JP2007207755A (ja) * 2006-01-31 2007-08-16 Axcelis Technologies Inc 超伝導磁石を有するイオン注入機
CN101802980A (zh) * 2007-09-27 2010-08-11 瓦里安半导体设备公司 制造硅绝缘体晶圆的单晶圆植入机
US20110126399A1 (en) * 2007-11-21 2011-06-02 Black And Decker Inc. Method of making an armature
CN201796681U (zh) * 2010-03-02 2011-04-13 Abb公司 电子装置的线圈结构
CN201820573U (zh) * 2010-04-26 2011-05-04 廊坊英博电气有限公司 带有冷却风道的谐波滤波电抗器
CN102345942A (zh) * 2010-07-28 2012-02-08 通用电气公司 电磁铁组件的冷却系统

Also Published As

Publication number Publication date
KR20160021204A (ko) 2016-02-24
US9177708B2 (en) 2015-11-03
US20140367583A1 (en) 2014-12-18
JP2016521913A (ja) 2016-07-25
CN105283975A (zh) 2016-01-27
KR102161231B1 (ko) 2020-10-05
TWI624856B (zh) 2018-05-21
US9852882B2 (en) 2017-12-26
JP6429407B2 (ja) 2018-11-28
US20160027610A1 (en) 2016-01-28
WO2014201363A1 (en) 2014-12-18
TW201506979A (zh) 2015-02-16

Similar Documents

Publication Publication Date Title
CN105283975B (zh) 用于离子装置的磁铁以及离子装置
JP6469682B2 (ja) 任意の長さのリボン状ビームイオン源
US9595458B2 (en) Plasma processing apparatus and method, and method of manufacturing electronic device
CN102668016B (zh) 离子注入系统及方法
US8142607B2 (en) High density helicon plasma source for wide ribbon ion beam generation
TW200826138A (en) Ion beam apparatus and method for ion implantation
CN105874888A (zh) 在等离子体源中引导磁场的方法和相关联的系统
US8796649B2 (en) Ion implanter
TW201535454A (zh) 使用具有磁性約束的電漿源的基於電漿的材料改質
KR101232198B1 (ko) 플라스마 발생 유닛 및 이를 포함하는 기판 처리 장치 및 방법
TWI470674B (zh) 離子注入裝置、離子注入設備系統及離子注入方法
TW201913711A (zh) 用於離子佈植機的離子產生器
CN108701573A (zh) 改进的离子源阴极护罩
CN105723498B (zh) 等离子体流枪以及等离子体回路组件
US6977991B1 (en) Cooling arrangement for an X-ray tube having an external electron beam deflector
KR101977702B1 (ko) 이온 소스 헤드 및 이를 포함하는 이온 주입 장치
CN118510143A (zh) 射频等离子装置及真空系统
JP2020024894A (ja) イオンビーム中和方法と装置
US9006689B2 (en) Source bushing shielding
KR102457741B1 (ko) 진공 분위기에서 사용되는 전자석 어셈블리 및 그 제조 방법
JP2005197042A (ja) イオン質量分離装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant