CN105281199A - Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser - Google Patents
Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser Download PDFInfo
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- CN105281199A CN105281199A CN201510711347.1A CN201510711347A CN105281199A CN 105281199 A CN105281199 A CN 105281199A CN 201510711347 A CN201510711347 A CN 201510711347A CN 105281199 A CN105281199 A CN 105281199A
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Abstract
The invention discloses a continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser. One end of a first active resonator cavity and one end of a second active resonator cavity are coupled in the shape of V to form a multi-mode coupled region. A cavity surface reflecting surface is arranged on the end face of the multi-mode coupled region. The other end of the first active resonator cavity and a first passive filter are connected in series through a deep etching groove to form an arm of the laser. The other end of the second active resonator cavity and a second passive filter are connected in series through a deep etching groove to form the other arm of the laser. Shallow etching grooves are arranged on the first active resonator cavity and the second active resonator cavity. The laser provided by the invention has the advantages of compact structure, simple production process, low cost and the like, and does not need an external reference light source.
Description
Technical field
The present invention relates to Microwave photonics field, particularly relate to a kind of single-chip integration for microwave generation and frequency interval continuously adjustable V-type coupling cavity two-wavelength semiconductor laser.
Background technology
The signal of microwave frequency band all has very important application at numerous areas such as radio communication, radar detection, microwave sensings.Particularly in recent years along with user's developing rapidly sharply soaring and " mobile Internet " that wireless data traffic requires, high-speed wideband wireless communication technology becomes the developing direction of next generation wireless communication technology, also becomes market demand new growth point.And the generation of microwave photon technology, particularly microwave light source is as the core technology of " mobile Internet ", just becoming the study hotspot of each research group and academic institution.
Producing microwave carrier based on two bundle close-spaced wavelength beat frequencies is the major way realizing photoproduction microwave carrier.The technology reported at present mainly comprises three classes: namely based on how grating coupled fiber laser or semiconductor laser; The microwave light origin system of high-frequency microwave carrier wave is produced based on optical non-linear effect; And based on the semiconductor laser that coupling cavity is coupled.
Based on grating coupled fiber laser because its grating can do very long, and there is very long gain region, and the control device that Polarization Control or PGC demodulation etc. are complicated can be carried out, generally there is good spectral characteristic and microwave spectrum characteristic, but it is untunable to there is microwave frequency in it, complex manufacturing technology, systems bulky, the shortcomings such as cost is higher.
And the continuously adjustabe of microwave frequency generally can be realized based on the microwave light origin system of fiber nonlinear effect, and between the dual wavelength based on nonlinear effect, generally there is good phase correlation, narrower microwave spectrum live width can be realized, generally comprise the multiple technologies such as technology, injection locking technique and the PHASE-LOCKED LOOP PLL TECHNIQUE produced based on intensity modulated, phase-modulation, four wave mixing or stimulated Brillouin scattering equiband.But itself needs to provide an accurate microwave local oscillator, complicated technology realization, and system is huge, high in cost of production shortcoming.
For the generation of microwave carrier, laser is usually needed to produce the dual wavelength of two that close on, frequency intervals and intensity stabilization.Modal structure is exactly the structure of the DFB series coupled based on two different screen periods.Fig. 1 is based on grating coupled two-wavelength semiconductor laser schematic diagram, be reported in " Dual-wavelengthInGaAs-GaAsridgewaveguidedistributedBragg reflectorlaserswithtunablemodeseparation. ", Roh, S.D, etal.PhotonicsTechnologyLetters, IEEE12.10 (2000): 1307-1309, due to the modeling effect of grating, this kind of laser generally has good unimodular property and frequency stability.But this kind of laser relates to complicated preparing grating and secondary epitaxy growth, and cost is very high.
In order to provide cheap dual wavelength frequency interval semiconductor laser with tunable, what is built up the Army in 2005 and proposes a kind of two-wavelength semiconductor laser based on the coupling of multistage FP resonant cavity, be disclosed in U.S. patent Nos: " Dual-wavelengthsemiconductorlaser ", publication number: US20050243882A1.Fig. 2 is the structural representation of this laser.The Fabry Perot resonator that it is coupled by deep etching groove by three sections is in series, and the width of each deep etching groove is quarter-wave odd-multiple.Wherein adjacent two-stage method Fabry-Perot-type resonant cavity has equal optical length, is used for producing a series of dual wavelength comb spectrum.The shorter Fabry-Perot etalon of another segment length selects some dual wavelength patterns wherein as filter.This kind of laser can realize the continuous tuning of dual wavelength frequency interval, and cost of manufacture is also lower.But due to the restriction of manufacture craft precision, the width of deep etching groove is difficult to accurately control, and the size of device is also long, and the rate of finished products of making is not high simultaneously.
Summary of the invention
For the deficiencies in the prior art, the present invention is intended to propose a kind of frequency interval continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, it has microwave frequency continuously adjustabe, compact conformation, the advantages such as manufacture craft tolerance is larger, avoid point-device technique preparation condition, there is the series of advantages of coupled-cavity semiconductor lasers simultaneously.
The technical solution used in the present invention is:
Laser of the present invention comprises the first active resonant cavity, the second active resonant cavity, the first passive filter and the second passive filter, be coupled with V-arrangement between first active resonant cavity and second active resonant cavity one end and form Multiple modes coupling district, form v-shaped cavity, the end face in Multiple modes coupling district has face, chamber reflecting surface, Multiple modes coupling district is quarter-wave coupled zone, namely has the phase difference of 90 ° between the straight-through coupling coefficient in Multiple modes coupling district and cross-coupling coefficient; By an arm of deep etching groove laser in series between the other end of the first active resonant cavity and the first passive filter; By another arm of deep etching groove laser in series between the other end of the second active resonant cavity and the second passive filter; Be provided with the shallow etching groove for electric isolution between one section of waveguide of first active resonant cavity at place, Multiple modes coupling district and all the other waveguides of the first active resonant cavity, in one section of waveguide of second active resonant cavity at place, Multiple modes coupling district and the second active resonant cavity, between all the other waveguides, be provided with the shallow etching groove for electric isolution.
The first described active resonant cavity has equal optical length with the second active resonant cavity.
The first described passive filter and the optical length of the second passive filter are the odd-multiple of 1/4th laser emitting wavelength and different.
The optical length of the deep etching groove between described first active resonant cavity and the first passive filter and the deep etching groove between the second active resonant cavity and the second passive filter is the odd-multiple of 1/4th laser emitting wavelength.
Described Multiple modes coupling district is provided with the fine tuning phase electrode for phase place adjustment.
Described first active resonant cavity except Multiple modes coupling district and described second active resonant cavity are respectively equipped with the first gain tuning electrode and the second gain tuning electrode.
The first described passive filter and the second passive filter are respectively equipped with the first wave length trimming electrode and second wave length trimming electrode that adjust for refractive index, for realizing the aligning of laser excitation mode and filter center
Preferably, the first described active resonant cavity and the second active resonant cavity all can adopt active Fabry Perot resonator.
Preferably, the first described passive filter and the second passive filter all can adopt passive Fabry Perot resonator.
Two sections of active resonant cavities of the present invention will produce a series of dual-wavelength lasing mould when electrical pumping reaches gain for threshold value, passive filter selects one of them dual wavelength pattern as band pass filter, the dual wavelength frequency interval that laser exports changes along with the change of two-arm Injection Current ratio, is received the microwave carrier signals producing corresponding difference frequency by high speed detector.The present invention, by changing the Injection Current ratio of two-arm active area, can realize the tunable of microwave carrier frequency.Passive filter is also provided with tuning electrode, is used for realizing the aligning at excitation wavelength and filter passband center, improve the mode selective of dual wavelength pattern.
The present invention is compared with background technology, and the beneficial effect had is:
The present invention is without the need to making grating, and cost of manufacture is low.
V-shaped cavity structure of the present invention can reduce the length of device, makes device architecture more simply compact.
Quarter-wave coupler of the present invention is provided with tuning electrode, and the phase place of fine-tuning coupler increases the tolerance of device, improves the rate of finished products of device.
The present invention, without the need to arranging external microwave signal source, reduces complexity and the cost of system.
In the present invention, two sections of active areas are provided with gain-adjusted electrode, can by the simple continuous tuning regulating the gain inequality between two-arm just can realize frequency interval between dual wavelength, and tuning algorithm is simple.
The present invention's two passive filters are provided with wavelength trimming electrode, for finely tuning the refractive index of passive wave guide, realize the aligning of passive filter bandpass center and excitation wavelength, can realize good mode selective and larger Free Spectral Range simultaneously.
Comprehensively above-mentioned, volume small size of the present invention is short, and the device performance made is not high to the required precision of etching groove width, and etching width easily accurately controls, and manufacture craft is simple, and cost of manufacture can reduce greatly, has larger development prospect and commercial application value.
Accompanying drawing explanation
Fig. 1 is based on grating coupled adjustable frequency interval two-wavelength semiconductor laser schematic diagram in background technology.
Fig. 2 is the adjustable frequency interval two-wavelength semiconductor laser schematic diagram based on etching groove coupling in background technology.
Fig. 3 is structural representation of the present invention.
Fig. 4 is the cross sectional representation of fine tuning phase electrode of the present invention.
Fig. 5 is the cross sectional representation of the present invention one arm along waveguide direction.
Fig. 6 is at a wavelength of 1550 run, the graph of a relation of the transmissivity of deep etching air groove and reflectivity and groove width.
Fig. 7 is small signal gain spectrogram under the threshold value of the embodiment of the present invention when not considering passive wave guide filter.
Fig. 8 is the gain for threshold value spectrogram of the embodiment of the present invention when not considering passive wave guide filter.
Fig. 9 be the embodiment of the present invention when not considering passive wave guide filter, small signal gain spectrogram under the threshold value of two-arm under difference injects gain situation.
Figure 10 be the embodiment of the present invention when not considering passive wave guide filter, the graph of a relation of dual wavelength frequency interval and two-arm gain inequality.
Figure 11 be the embodiment of the present invention when not considering passive wave guide filter, the graph of a relation that dual wavelength peak frequency interval and active waveguide chamber are long.
Figure 12 be the embodiment of the present invention when not considering passive wave guide filter, the graph of a relation of dual wavelength frequency interval and straight-through coupling coefficient in two kinds of different brachium situations.
Figure 13 is reflectance spectrum and the superposition spectrogram thereof of two sections of passive wave guide filters of the embodiment of the present invention.
Figure 14 is embodiment small signal gain spectrogram under consideration two sections of filtered threshold values of passive wave guide.
Figure 15 is that inventive embodiments is at the filtered gain for threshold value spectrogram of consideration two sections of passive wave guides.
In figure: 1, Multiple modes coupling district, 2, the first active resonant cavity, 3, the second active resonant cavity, 4, the first passive filter, the 5, second passive filter, 6, deep etching groove, 7, face, chamber reflecting surface, 8, fine tuning phase electrode, the 9, first gain-adjusted electrode, the 10, second gain-adjusted electrode, 11, the first passive filter regulates electrode, 12, the second passive filter regulates electrode, and 13, top covering, 14, active area, 15, resilient coating, 16, substrate layer, 17, backplate, 18, shallow etching groove.
Embodiment
Below according to drawings and embodiments, the present invention is described in detail.
The present invention adopts the semiconductor laser based on coupling cavity coupling, multistage FP chamber is utilized to intercouple to produce dual wavelength, first two method in relative background technology, the microwave spectrum live width that it produces has certain broadening, but because two bundle wavelength share a gain cavity, there is identical external environment, between two wavelength, also there is stronger phase correlation, good microwave spectrum characteristic can be realized.
Embodiments of the invention and operation principle as follows:
In concrete enforcement, as shown in Figure 3, the present invention includes the passive Fabry Perot resonator of two sections of isometric active Fabry Perot resonators and two sections of Length discrepancy, the two-arm of v-shaped cavity is of coupled connections by quarter-wave coupled zone 1, the end face in Multiple modes coupling district 1 has face, chamber reflecting surface 7, each arm of v-shaped cavity be all by active Fabry Perot resonator and passive method F-P etalon in series, there is between the straight-through coupling coefficient of the quarter-wave coupled zone formed and cross-coupling coefficient the phase difference of 90 °.The remainder joining place of the part and active resonant cavity that are positioned at Multiple modes coupling district 1 in the first active resonant cavity 2 and the second active resonant cavity 3 is equipped with the shallow etching groove 18 for electric isolution.
By an arm of deep etching groove 6 laser in series between first active Fabry Perot resonator 2 and the first passive Fabry Perot resonator 4, by another arm of deep etching groove 6 laser in series between the second active Fabry Perot resonator 3 and the second passive Fabry Perot resonator 5; Be connected by one section of quarter-wave coupler between active Fabry Perot resonator 2 with active Fabry Perot resonator 3.Coupled zone is provided with fine tuning phase electrode 8, and two-arm active resonant cavity is provided with gain-adjusted electrode 9 and 10, and two-arm passive filter is provided with refractive index trimming electrode 11 and 12.
Here the straight-through coupling coefficient of definition is that active Fabry Perot resonator returns the distribution of light intensity in own resonance chamber and the ratio of incident field intensity after the end face reflection in Multiple modes coupling district 1, and cross-coupling coefficient is that active Fabry Perot resonator enters the distribution of light intensity of another resonant cavity and the ratio of incident field intensity after the end face reflection in Multiple modes coupling district 1.
During laser works, quarter-wave coupler and two sections of equal Fabry-Perot active cavities there will be a series of dual wavelength comb spectrum under electrical pumping condition.The slightly short Fabry Perot resonator of length is used for selecting a pair dual wavelength wherein as filter and sharply penetrates mould as final.The beat signal of the dual wavelength exported can be received by high speed photodetector and change into corresponding microwave carrier signals.By regulating the Injection Current ratio of two-arm active resonant cavity, the frequency interval between dual wavelength can be regulated, and ensure that output intensity is constant, thus realizing the tunable of microwave carrier signals.For passive filter, the effective refractive index of waveguide can be changed by carrier injection effect or reverse-biased electro optic effect, utilize electrical feedback signal to control the centre wavelength of passive filter, thus stablize the relative intensity between two wavelength.
The two-wavelength semiconductor laser of relative etching groove coupling, semiconductor laser based on quarter-wave coupler can provide the phase compensation of certain limit due to the bias current in coupler electrode, considerably increase the making tolerance of laser process, improve the rate of finished products of element manufacturing.The structure of v-shaped cavity also makes the size of device compacter simultaneously, improves the integrated level of device.
As shown in Figure 4, the stratiform of the laser of concrete enforcement by substrate layer 16, resilient coating 15, provide the sandwich layer 14 of optical gain and top covering 13 to form, the upper surface of device and lower surface can plate different electrode matel material and form P-type electrode and N-type electrode, first, second gain-adjusted electrode 9 and 10 is as P-type electrode, and the backplate 17 bottom substrate layer 16 is as N-type electrode.Optical gain can be provided like this by electrical pumping.Generally sandwich layer is made up of multiple quantum well layer, and carries out a certain amount of doping according to different situations.From cross section, generally adopt ridge waveguide or bury type waveguide to limit light field.
As shown in Figure 5, except separating with deep etching groove 6 between active waveguide and passive filter, the fine tuning phase electrode on quarter-wave coupler and also need shallow etching groove 18 to carry out electric isolution between the gain electrode on active resonant cavity.
Deep etching groove in laser structure is used as the high reverse--bias face of resonant cavity.In order to reach higher reflectivity, the width of deep etching groove must be quarter-wave odd-multiple.The transmissivity of air deep etching groove and the relation of reflectivity and groove width as shown in Figure 6, can find, only just there will be the maximum of reflectivity in the position of quarter-wave odd-multiple.In theory, when air groove width is quarter-wave, loss is minimum, and along with the increase of groove width, light field can cause the increase of loss due to the pattern diffusion in air groove and diffraction effect, and therefore the peak value of reflectivity is reducing gradually.On the other hand, the required precision of reduction to manufacture craft of groove width is more and more higher.For the wavelength of 1550nm, quarter-wave is only 0.3875um, and common photoetching process is difficult to meet the demands.For current technique, the error that air groove makes is in ± 0.1um magnitude, and in order to meet technologic requirement, generally adopt 5/4 λ, i.e. 1.94um, wherein λ is the operation wavelength of laser.
In order to illustrate the operation principle of dual laser, first only considering the laser structure not comprising passive filter, calculating the small signal gain spectrum of the v-shaped cavity laser do not comprised under filter conditions with transfer matrix method, as shown in Figure 7.Assuming that the chamber length that the effective refractive index of laser is 3.29, two active resonant cavities is L
1=L
2=210.1um, the straight-through coupling coefficient of quarter-wave coupler is 0.6, and two-arm has equal gain coefficient (g1=g2=29.9cm
-1), can find a series of dual wavelength comb spectrum, the wavelength interval between dual wavelength is 0.42nm, and Free Spectral Range is 1.6nm.Gain for threshold value spectrum in corresponding situation as shown in Figure 8, can find that quarter-wave coupler does not have mode selective, and all dual wavelength patterns can both starting of oscillation simultaneously.
Laser two-arm is injecting the small signal gain spectrum under equal gain and different gains condition as shown in Figure 9, and laser parameter is set as the long L in active cavity chamber
1=L
2=210.1um, the straight-through coupling coefficient of quarter-wave coupler is 0.8.When two-arm injects equal gain, (the first gain and the second gain are g1=g2=29.87cm respectively
-1), small signal gain spectrum is identical with Fig. 7, and the wavelength interval between dual wavelength is 0.356nm, and respective frequencies is spaced apart 44.5GHz, as indicated by the solid line in fig. 9.If the gain inequality between increase two-arm, the frequency interval between dual wavelength can reduce.As shown in phantom in Figure 9, g1=0cm is worked as
-1, g2=59.7cm
-1time, the wavelength interval between dual wavelength is 0.152nm, and respective frequencies is spaced apart 19GHz.Figure 10 gives when not considering passive wave guide filter, the relation of gain inequality between dual wavelength frequency interval and two-arm, sets the long L in chamber of two active resonant cavities here
1=L
2=210.1um, straight-through coupling coefficient is 0.6, and can find that the frequency interval between dual wavelength is maximum when two-arm has equal gain, along with the increase of gain inequality between two-arm, the frequency interval between dual wavelength reduces gradually.
Figure 11 be the embodiment of the present invention when not considering passive wave guide filter, the relation that dual wavelength peak frequency interval (corresponding two-arm has equal gain coefficient) and active cavity chamber are long.The straight-through coupling coefficient of coupler is set to 0.6, can find, dual wavelength peak frequency interval is reduced along with the increase of chamber length.
Figure 12 gives dual wavelength peak frequency interval (corresponding two-arm has equal gain coefficient) and quarter-wave coupler and leads directly to relation between coupling coefficient.Along with coupler leads directly to the increase of coupling coefficient, also every reducing gradually between dual wavelength peak frequency, the chamber length of laser and the parameter of coupler therefore reasonably can be selected as required.
Because quarter-wave coupler itself does not have mode selective, in order to the some dual wavelength patterns selected in dual wavelength frequency comb penetrate mould as swashing, need to adopt passive filter to carry out filtering modeling.Figure 13 gives reflectance spectrum and the stack spectral thereof of two sections of passive wave guide filters of the embodiment of the present invention.The chamber of laser two-arm is long is set to L
1=L
2=210um, the width of etching groove is set to 5/4 λ, and the length of two sections of passive filters is respectively L
f1=19.9um and L
f2=61.4um.The pattern being positioned at filter center will have minimum gain for threshold value and swash and penetrate.The Free Spectral Range of filter determines by the chamber of filter is long, meets △ f=c/2n
gl
p, wherein, c is the light velocity in vacuum, n
gfor the group velocity that light transmits in the waveguide, L
pfor the chamber of passive filter is long.Penetrate to make to only have a dual wavelength pattern to swash in gain spectral, one of them filter length is sufficiently short, to ensure that its Free Spectral Range is greater than the gain spectrum width of laser.But the full width at half maximum of the filter function that shorter filter is corresponding is wider, and model selection is higher than not, this can realize narrower filter function and wider Free Spectral Range by increasing a longer passive filter simultaneously.Corresponding comprise the small signal gain spectrum after two passive filters as shown in figure 14, can find, only have a dual wavelength pattern can starting of oscillation, Figure 15 be then that corresponding gain for threshold value is composed.By graph discovery, the position of respective filter centre wavelength has minimum gain for threshold value, is 44.5cm-1, and the gain for threshold value of adjacent dual wavelength pattern is 49.5cm-1, and gain for threshold value difference reaches 5cm-1, has good mode selective.
If the centre wavelength of filter can aim at the center of dual wavelength pattern, these two patterns can have the starting of oscillation simultaneously of identical gain for threshold value, and have identical power output.But owing to there is the destabilizing factor such as mode competition or temperature drift in chamber, the power output of two wavelength there will be certain shake.In order to the relative intensity between stable dual wavelength, can electrical feedback signal be loaded on passive filter, be finely tuned the centre wavelength of filter by the refractive index changing passive filter.Electrical feedback signal can, by integrated light detector on sheet or outside chamber, utilize the beat signal of dual wavelength to carry out the intensity of the microwave carrier signals that stable PD exports as negative feedback.
For passive filter, realize by the method etching the larger passive wave guide of regrowth energy gap, also can pass through the mode of some chip reprocessings, as quantum well mixing technology etc.If manufacture craft does not allow, also can by by active filter electrical pumping to just realizing below gain for threshold value.
Comprehensively above-mentioned, size of the present invention is little, and manufacture craft is simple, the introducing of quarter-wave coupler is except realizing the dual-wavelength lasing of laser, also make the manufacture craft tolerance of device greatly increase, improve the rate of finished products of device, there is outstanding significant technique effect.In addition, the present invention just can with the continuously adjustabe of simple algorithm realization dual wavelength frequency interval under the condition not introducing outside local oscillator light source, utilize negative-feedback signal can also realize the stable of microwave power and frequency, there is very large development prospect and commercial application value.
Above-described embodiment is used for explaining and the present invention is described, instead of limits the invention.In the protection range of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention.As the air groove of between chamber and chamber can replace with multiple air groove, the number of passive etalon can be one or more, can realize better performance of filter as required.The not necessarily air of filling between deep etching groove can also be SiO
2, the material often related in the semiconductor technologies such as SiN or BCB.The end face of laser both can define with deep etching groove, deep etching face, also can define by cleaved facets.The end face in face, chamber can also meet the demand etc. under different situations by plated film.
Claims (9)
1. a frequency interval continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, comprises the first active resonant cavity (2), the second active resonant cavity (3), the first passive filter (4) and the second passive filter (5); It is characterized in that: being coupled with V-arrangement between the first active resonant cavity (2) and the second active resonant cavity (3) one end forms Multiple modes coupling district (1), the end face in Multiple modes coupling district (1) has face, chamber reflecting surface (7), and Multiple modes coupling district (1) is quarter-wave coupled zone; By an arm of deep etching groove (6) laser in series for part reflection between the other end of the first active resonant cavity (2) and the first passive filter (4); By another arm of deep etching groove (6) laser in series for part reflection between the other end of the second active resonant cavity (3) and the second passive filter (5); Be provided with the shallow etching groove (18) for electric isolution between first active resonant cavity (2) waveguide at Multiple modes coupling district (1) place and the first active resonant cavity (2) all the other waveguides, between the second active resonant cavity (3) waveguide at Multiple modes coupling district (1) place and the second active resonant cavity (3) all the other waveguides, be provided with the shallow etching groove (18) for electric isolution.
2. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described the first active resonant cavity (2) has equal optical length with the second active resonant cavity (3).
3. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described the first passive filter (4) and the optical length of the second passive filter (5) are the odd-multiple of 1/4th laser emitting wavelength and different.
4. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: the optical length of the deep etching groove (6) between described first active resonant cavity (2) and the first passive filter (4) and the deep etching groove (6) between the second active resonant cavity (3) and the second passive filter (5) is the odd-multiple of 1/4th laser emitting wavelength.
5. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described Multiple modes coupling district (1) is provided with fine tuning phase electrode (8).
6. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described first active resonant cavity (2) except Multiple modes coupling district (1) and described second active resonant cavity (3) are respectively equipped with the first gain tuning electrode (9) and the second gain tuning electrode (10).
7. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described the first passive filter (4) and the second passive filter (5) are respectively equipped with first wave length trimming electrode (11) and second wave length trimming electrode (12).
8. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described the first active resonant cavity (2) and the second active resonant cavity (3) all adopt active Fabry Perot resonator.
9. a kind of frequency interval according to claim 1 continuously adjustable V-type coupling cavity two-wavelength semiconductor laser, is characterized in that: described the first passive filter (4) and the second passive filter (5) all adopt passive Fabry Perot resonator.
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| CN114503003A (en) * | 2019-09-27 | 2022-05-13 | ams国际有限公司 | Optical device, photon detector, and method of manufacturing optical device |
| CN115411612A (en) * | 2022-09-05 | 2022-11-29 | 武汉敏芯半导体股份有限公司 | Narrow linewidth semiconductor laser and preparation method thereof |
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| CN115411612A (en) * | 2022-09-05 | 2022-11-29 | 武汉敏芯半导体股份有限公司 | Narrow linewidth semiconductor laser and preparation method thereof |
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