CN102545045B - Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves - Google Patents
Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves Download PDFInfo
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Abstract
The invention discloses a multi-section-type (FabryPerot) cavity single wavelength laser based on deeply etched grooves. The laser disclosed by the invention is structurally characterized by at least comprising a laser waveguide, a first deeply etched reflecting surface and a second deeply etched reflecting surface which are respectively positioned at two ends of the laser waveguide, and a deeply etched groove array arranged between the first deeply etched reflecting surface and the second deeply etched reflecting surface, wherein the deeply etched groove array is composed of 2-6 deeply etched grooves; the laser is manufactured on a semiconductor epitaxial wafer, and respectively comprises a lower cladding layer, a quantum well layer, an upper cladding layer and certain auxiliary layers among the lower cladding layer, the quantum well layer, the upper cladding layer layers from bottom to top; and the laser waveguide is divided into a plurality of sections of independent waveguides by the deeply etched groove array, the first deeply etched reflecting surface and the second deeply etched reflecting surface, each section of waveguide is covered with an electrode, and each electrode is respectively injected with a current so as to control the laser wavelength and power. Compared with the background technology, the laser disclosed by the invention has the advantages that the production process is simpler and cheaper due to only once epitaxial growth, the manufacturing error is smaller, the energy consumption for the apparatus operation is less, and the laser line width is narrower.
Description
Technical field
The present invention relates to a kind of multisection type FP chamber single wavelength laser, relate in particular to a kind of multisection type FP chamber single wavelength laser based on the deep etching groove.
Background technology
20 century 70s, optical fiber and laser have been obtained great breakthrough, and through various countries research staff's effort, optical fiber telecommunications system repeatedly updates in decades.Particularly since early 1990s because human society has advanced the people epoch of amount of information exchange explosion type sharp increase, Fibre Optical Communication Technology with advantages such as its huge broadband potentiality and impayable transmission performances in the communications field.Especially in growing apart from high capacity communication, occupied irreplaceable critical positions.
Wavelength-division multiplex technique (wavelength-division multiplexing, WDM) be the technology that present high-capacity optical fiber communication network generally adopts, carrying out along with the cable TV integrated service particularly, growing to network bandwidth requirements, consideration of economic cost etc. is transformed in enforcement, the network upgrade of all kinds of selectivity services, the characteristics and advantages of WDM displays in the CATV transmission system gradually, shows wide application prospect.
This technology is with a series of carrying informations but the different light signal of wavelength is synthetic a branch of, transmits along simple optical fiber; Use again someway the communication technology that each different wave length signal is separated at receiving terminal.This technology can simultaneously be transmitted multiple signals at an optical fiber, and each road signal is all transmitted by the light of certain specific wavelength, a Here it is wavelength channel.
As seen wavelength-division multiplex technique is to significantly improve transmission capacity at same optical fiber, realizes the optical fiber telecommunications system upgrade expanding and further improves message capacity with less cost.This one of them key technology is exactly light source: not only requires working stability, more requires production technology simple, and with low cost.
The most widely used single-mode laser has two kinds of structures in the optical communication field at present: VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL) and distributed feedback laser (DFB).The structure of typical case's VCSEL laser as shown in Figure 1, wherein 1 be the metal electrode zone, 2 be that p-type DBR is regional, 3 is quantum well layer, 4 is that N-shaped DBR is regional, 5 is light-emitting window.Its operating current injects by metal electrode zone 1,2 and 4 two DBR zones as equivalent minute surface with energy limited in the chamber, and form vibration, final laser is by light-emitting window 5 outgoing.The characteristics of this kind structure are that the chamber of vertical cavity is long short especially, and mirror surface relies on plural layers to realize, therefore the thickness and precision of its epitaxial layer structure requires very high in process of production: the varied in thickness 1% of epitaxial loayer will be brought the wave length shift of 10nm.This has improved production requirement undoubtedly, and then has improved production cost.
Another kind of commonly used structure is Distributed Feedback Laser, its structure as shown in Figure 2, wherein quantum well layer is etched to the shape of grating, for resonant cavity provides feedback.The cycle of grating is designed in the optical wavelength magnitude usually, and the mode by holographic exposure realizes.So not only need once high-precision photo-mask process in its production procedure, also need the epitaxial loayer of growing twice, and this will improve production cost largely.
In fact the simplest laser structure is exactly FP cavity laser (Fabry-Perot Laser), and it does not need repeatedly extension, and only an etching just can be finished.But typical single hop FP cavity laser since its without any modeling mechanism, all wavelength that satisfy phase relation all can cause vibration and vie each other, so final outgoing is the wavelength that a series of intervals equate.In order to obtain high-quality single-mode output at the FP cavity laser, people have done a lot of researchs, and modal method is to utilize modeling means (such as grating) realization single-mode output outside the chamber, but this Integrated Trait that can increase the laser volume and reduce laser.Another thinking is to introduce some special constructions in the FP chamber, wherein Dublin City University Slotted Fabry-Perot Laser(SFP that seminar makes) shown good characteristic.They etch the dark shallow slot of a series of about 1.5um (as shown in Figure 3 in the FP chamber, wherein 1 is shallow etching groove, 2 is quantum well layer), these shallow slots are divided into a plurality of segments with the FP chamber, the wavelength that each segment FP chamber excites is coupled each other, finally realize single-mode output by cursor effect, side mode suppression ratio can reach more than the 30dB.The advantage of this structure maximum do not need in the production process to be the repeatedly extension of growing, and just can realize by the most common photoetching and etching technics.But still there are two problems in this structure: 1, most of energy concentrates on quantum well layer in laser chamber, and shallow etching groove etches into quantum well layer just, in the time of this interface of light process, have the acute angle that a big chunk energy is run into trench bottom, and then scatter outside the resonant cavity, for introducing excess loss in the chamber; 2, this device adopts cleavage surface as reflecting surface, and error generally reaches about 10um at least in practical operation, finally causes greatly off-design wavelength of practical devices wavelength.
Summary of the invention
The object of the invention is to the deficiency for background technology, a kind of multisection type FP chamber single wavelength laser based on the deep etching groove is provided.
The technical solution used in the present invention is: a kind of multisection type FP chamber single wavelength laser based on the deep etching groove, comprise laser waveguide, lay respectively at the first deep etching reflecting surface, the second deep etching reflecting surface at its two ends and be distributed in therebetween deep etching groove array, described deep etching groove array is comprised of 2-6 deep etching groove.
Described laser fabrication comprises respectively under-clad layer from the bottom up on semiconductor epitaxial wafer, some auxiliary layers between quantum well layer and top covering and the above each layer.The etching depth of all the deep etching grooves in the described deep etching groove array, the first deep etching reflecting surface and the second deep etching reflecting surface surpasses quantum well layer, is coated with electrode on the top covering.
Light path between light path between described the first deep etching reflecting surface and the adjacent deep etching groove center, the second deep etching reflecting surface and the adjacent deep etching groove center and the light path between two the deep etching groove centers of arbitrary neighborhood in the described deep etching groove array all need satisfy the integral multiple of 1/4th laser centre wavelengths, and wherein to have one section light path at least be the even-multiple of 1/4th laser centre wavelengths.
Described laser waveguide is divided into several sections independently waveguides by deep etching groove array and the first deep etching reflecting surface, the second deep etching reflecting surface, is coated with electrode in every section waveguide, and the difference Injection Current is realized the control to laser wavelength and power on the electrode.
The present invention compares with background technology, and the beneficial effect that has is: the present invention only needs an epitaxial growth so that production process simple cheap more, and it is less to make error; Device moves required energy loss still less; Laser rays width.
Description of drawings
Fig. 1 is VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL) structural representation, comprising metal electrode zone 1, p-type DBR zone 2, quantum well layer 3, N-shaped DBR zone 4 and light-emitting window 5
Fig. 2 is distributed feedback laser (DFB) structural representation
Fig. 3 is Slotted Fabry-Perot Laser structural representation, comprising shallow etching groove 1 and quantum well layer 2
Fig. 4 is based on the multisection type FP chamber single wavelength laser structural representation of deep etching groove, comprising laser waveguide 11, the first deep etching reflectings surface 21, the second deep etching reflecting surface 22, erosion groove array 31, the first deep etching groove 301, the second deep etching groove 302, under-clad layer 4, quantum well layer 5, top covering 6, auxiliary layer 7, electrode 115 and waveguide 110
Fig. 5 is that light is through the schematic diagram of deep etching groove structure
Fig. 6 is that light is through the schematic diagram of shallow etching groove structure
Fig. 7 calculates light at the transmissivity and the reflectivity that pass deep etching groove interface with Rsoft software, and groove width is 1.6um, and abscissa represents computing time, and ordinate represents power.
Fig. 8 calculates light at the transmissivity and the reflectivity that pass shallow etching groove interface with Rsoft software, and groove width is 1.6um, and abscissa represents computing time, and ordinate represents power.
Fig. 9 is based on three sections cursor effect schematic diagrames that FP chamber excitation wavelength intercouples in the syllogic FP chamber single wavelength laser of deep etching groove, wherein
Excitation wavelength,
,
,
Be respectively three corresponding a series of excitation wavelengths in FP chamber,
,
,
Be respectively three excitation wavelength intervals that the FP chamber is corresponding.
Figure 10 is one, and wherein abscissa is electric current based on the actual measurement I-P curve of a kind of design of the syllogic FP chamber single wavelength laser of deep etching groove, and unit is milliampere; Ordinate is power output, and unit is milliwatt, can find out that threshold current is 22 milliamperes.
Figure 11 is one, and wherein abscissa is wavelength based on the actual excitation spectrum of a kind of design of the syllogic FP chamber single wavelength laser of deep etching groove, and unit is micron; Ordinate is power, and unit is dBm.
Figure 12 utilizes live width spectral line based on a kind of design of the syllogic FP chamber single wavelength laser of deep etching groove of zero beat method actual measurement, and wherein abscissa is frequency, and unit is Hz; Ordinate is power, and unit is dBm; The three dB bandwidth of measuring this laser is about 120kHz.
Figure 13 utilizes wavelength tuning performance based on a kind of design of the four-part form FP chamber single wavelength laser of deep etching groove of Matlab simulation, and wherein the abscissa coordinate is refractive index, and ordinate is wavelength, and unit is micron.
Embodiment
Fig. 4 is an embodiment of the invention, and its structure comprises laser waveguide 11, lay respectively at the first deep etching reflecting surface 21 at its two ends, the second deep etching reflecting surface 22 and be distributed in therebetween deep etching groove array 31.
Deep etching groove array 31, the first deep etching reflecting surface 21 and the second deep etching reflecting surface 22 are key structures of the present invention, and wherein deep etching groove array 31 comprises the first deep etching groove 301, the second deep etching groove 302 and is clipped in 0 ~ 4 deep etching groove between them.Said structure completes by ICP deep etching technique, requires the smooth vertical and etching depth of sidewall to surpass quantum well layer 5, to guarantee providing enough feedbacks, guarantees that simultaneously most of energy is propagated in the direction of level and resonant cavity in the chamber.In the time of light process deep etching groove side, because the degree of depth of groove is very large, therefore can be similar to through a minute surface, energy reserving is propagated in the direction of level and resonant cavity, reduces the scattering loss that is come by troughed belt, as shown in Figure 5.Different from deep etching groove structure is, as shown in Figure 6, in the waveguide of using shallow etching groove structure, pattern in the time of the shallow etching groove of light process in the waveguide is subject to the compression of air groove, make the center of energy offset downward a bit of, cause the pattern of shallow etching groove interface the right and left asymmetric, such structure can increase light scattering in different directions.In the time of the shallow etching groove of light process, since the existence of shallow etching groove, the crooked and scattering outside the chamber of light path, and in the time of light process deep etching groove, be similar to and pass a vertical minute surface, light path keeps straightline propagation substantially.Fig. 7 and Fig. 8 are respectively with transmissivity and the reflectivity of Rsoft software simulation light at the deep etching groove interface of passing same width and shallow etching groove interface, wherein the transmissivity of deep etching groove structure and reflectivity sum be greater than 0.75, and the transmissivity of shallow etching groove structure and reflectivity sum are approximately 0.7.This shows that deep etching groove structure is less and have a stronger feedback effect than the loss of shallow etching groove, 5% the gross energy that these two kinds of structures differ is because the scattering that architectural difference brings causes.The place that another one is different from shallow etching groove is manufacture craft, characteristic by dry etch process determines, the degree of depth of etching groove is darker, the perpendicularity of its bottom just more is difficult to guarantee, so 4 microns dark deep etching grooves of 1.6 microns dark shallow etching grooves of etching and etching can not use same technique.We have developed the etch recipe of a cover based on argon gas, hydrogen, methane, four kinds of gases of chlorine specially to be directed to the deep etching groove, are used for etching and obtain the smooth vertical deep etching groove of sidewall and deep etching reflecting surface.
The wavelength interval of typical case FP cavity laser is:
?。
Wherein
Wavelength interval, FP chamber,
Laser centre wavelength,
The laser material refractive index,
That the FP chamber is long.Take a syllogic FP chamber single wavelength laser based on the deep etching groove as example, Fig. 9 has showed independently excitation wavelength of 3 sections FP chambeies
,
,
, the wavelength interval is respectively
,
,
Because the FP cavity length is different, has small difference between the wavelength interval in these 3 sections FP chambeies.Only for laser centre wavelength
, condition of resonance is satisfied in 3 sections chambeies simultaneously, and other wavelength then do not satisfy condition of resonance, and laser centre wavelength is finally only arranged in certain Free Spectral Range
Form vibration, realize single-mode output.Therefore the similar principle with vernier caliper measurement of this principle is also referred to as " cursor effect ".
Above-mentioned these by the FP chamber with different length except being applied the electric current excitation laser by electrode 115, also have the effect that is similar to the FP etalon for the light that navigates within wherein.When light path satisfies the odd-multiple of 1/4th laser centre wavelengths, has maximum reflex for incident light; And when light path satisfied the even-multiple of 1/4th laser centre wavelengths, incident light can shake in this FP chamber.Therefore in our design, the integral multiple that requires light path, the second deep etching reflecting surface 22 between the first deep etching reflecting surface 21 and adjacent the first deep etching groove 301 centers and the light path between adjacent the second deep etching groove 302 centers and the light path between two the deep etching groove centers of arbitrary neighborhood in the described deep etching groove array 31 all need satisfy 1/4th laser centre wavelengths, and wherein have at least one section to be the even-multiple of 1/4th laser centre wavelengths, can starting of oscillation in the chamber to guarantee laser centre wavelength.
In order to realize accurately producing the FP chamber of design length, we utilize the first deep etching reflecting surface 21 and two deep etching reflectings surface 22 as the reflecting surface of resonant cavity, can error limitation in the precision of common photoetching about about 1 micron will be made like this, the precision that is higher than cleavage surface far away, thus the consistency of the output of practical devices wavelength and design wavelength output greatly improved.
Figure 10 be one based on the actual measurement I-P curve of a kind of design of the syllogic FP chamber single wavelength laser of deep etching groove, laser centre wavelength is about 1530 nanometers, and the length in three sections FP chambeies is respectively: 1230 1/4th design wavelengths (147 microns), 1668 1/4th design wavelengths (199.4 microns) and 1902 1/4th design wavelengths (227.4 microns).Figure 11 is the excitation spectrum of this sample laser.Can see that this sample laser has extraordinary single-mode output characteristic, threshold current is approximately 22 milliamperes simultaneously, much smaller than the threshold value (about 30 milliamperes) of utilizing the laser that utilizes shallow etching groove making in the bibliographical information, and the threshold value of the common FP cavity laser of same length is approximately 20 milliamperes, can prove thus the loss that loss is far very little and shallow etching groove in report is introduced that the deep etching groove is introduced.Figure 12 utilizes this sample Linewidth of laser spectral line of zero beat method actual measurement, is approximately 120kHz, utilize the Linewidth of laser of shallow etching groove making for more than the 500kHz in the bibliographical information, and its live width of common Distributed Feedback Laser is generally more than 1MHz.Can obtain the expression formula of relevant laser linewidth according to the Schawlow-Townes relation:
。
Wherein v is laser linewidth; v
gIt is group velocity; P
oLaser output power;
It is the live width broadening factor;
Represent the laser chamber internal loss; Г
wIt is the restriction factor of laser; H is Planck's constant.Can find out that from above-mentioned relation laser linewidth and loss close first, reduce the wastage and to reduce laser linewidth.Can find that on the threshold testing result of laser sample employed deep etching groove has very little cavity loss our design, so laser also should have narrower live width.
The present invention has two kinds of mode of operations:
1, fixedly single-wavelength working pattern.Electrode 115 mutual UNICOMs in every section waveguide 110, the fixing single wavelength laser of output.Output wavelength can perhaps change temperature and realize fine setting by change Injection Current in proper range, and adjustable range is usually in 1 ~ 2 nanometer.
2, multiple channel tuned wavelength mode of operation.Electrode 115 difference Injection Currents in every section waveguide 110 by the Injection Current of adjusting portion sub-electrode, utilize cursor effect to change the situation that each section FP chamber intercouples, and realize regulating channel.Figure 13 utilizes four-part form FP chamber single wavelength laser based on the deep etching groove of Matlab simulation, changes simultaneously variations in refractive index that the Injection Current in two sections FP chambeies wherein brings for the impact of output wavelength.Can find out the variation along with refractive index, we can obtain the channel at 10 stable 200GHz intervals.
Above measure is descriptive nature, and any scheme similar to its spirit all belongs to the protection range of patent.
Claims (2)
1. multisection type FP chamber single wavelength laser based on the deep etching groove, it is characterized in that, comprising: laser waveguide (11), the first deep etching reflecting surface (21) that lays respectively at laser waveguide (11) two ends and the second deep etching reflecting surface (22) and be distributed in the first deep etching reflecting surface (21) and the second deep etching reflecting surface (22) between deep etching groove array (31); Described deep etching groove array (31) is comprised of 2-6 deep etching groove; Described laser fabrication comprises respectively under-clad layer (4) from the bottom up on semiconductor epitaxial wafer, some auxiliary layers (7) between quantum well layer (5) and top covering (6) and the above each layer; The etching depth of all the deep etching grooves in the described deep etching groove array (31), the first deep etching reflecting surface (21) and the second deep etching reflecting surface (22) surpasses quantum well layer (5), is coated with electrode (115) on the top covering (6); Light path between light path between described the first deep etching reflecting surface (21) and adjacent the first deep etching groove (301) center, the second deep etching reflecting surface (22) and adjacent the second deep etching groove (302) center and the light path between two the deep etching groove centers of arbitrary neighborhood in the described deep etching groove array (31) are the integral multiple of 1/4th laser centre wavelengths, and wherein have at least one section to be the even-multiple of 1/4th laser centre wavelengths.
2. the multisection type FP chamber single wavelength laser based on the deep etching groove according to claim 1, it is characterized in that, described laser waveguide (11) is divided into several sections independently waveguides (110) by deep etching groove array (31) and the first deep etching reflecting surface (21), the second deep etching reflecting surface (22), be coated with electrode (115) in every section waveguide (110), the upper respectively Injection Current of electrode (115) is realized the control to laser wavelength and power.
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| CN102931581A (en) * | 2012-11-16 | 2013-02-13 | 浙江大学 | Wavelength-tunable laser based on long-period deep etching trench gate |
| CN103227416B (en) * | 2013-03-25 | 2015-02-11 | 中国科学院半导体研究所 | Adjustable semiconductor laser based on orthogonal micro-nano period structure mode selection |
| CN103259188B (en) * | 2013-05-02 | 2015-06-24 | 中国科学院半导体研究所 | Low-divergence-angle and single-longitudinal-mode edge-emitting photonic crystal laser |
| CN105428997B (en) * | 2015-12-30 | 2020-02-18 | 中国科学院半导体研究所 | Single longitudinal mode and wavelength tunable multi-section FP laser |
| CN110823517B (en) * | 2018-05-31 | 2021-06-08 | 安徽大学 | Method for measuring feedback factor C in laser feedback system |
| CN111934201A (en) * | 2020-09-29 | 2020-11-13 | 武汉云岭光电有限公司 | Silicon-based hybrid integration and tunable laser of tunable laser and preparation method thereof |
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