CN102638003A - Distributed feedback laser array - Google Patents
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- CN102638003A CN102638003A CN2012101317823A CN201210131782A CN102638003A CN 102638003 A CN102638003 A CN 102638003A CN 2012101317823 A CN2012101317823 A CN 2012101317823A CN 201210131782 A CN201210131782 A CN 201210131782A CN 102638003 A CN102638003 A CN 102638003A
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Abstract
The invention discloses a distributed feedback laser array composed of distributed feedback lasers which are arranged in parallel and made on an epitaxial wafer of a same semiconductor. The epitaxial wafer of the semiconductor at least comprises an upper coating layer, an active layer, a spacing layer, a refractive index control layer, a lower coating layer and a substrate. The active layer or the refractive index control layer is internally provided with bragg gratings forming distributed feedback. All layers above the refractive index control layer form upper table-boards of the distributed feedback lasers. The refractive index control layer forms guided wave structures of the distributed feedback lasers, and the widths of the guided wave structures of all the distributed feedback lasers in the array are different. Any distributed feedback laser in the distributed feedback laser array is composed of an upper electrode, an upper table-board, a guided wave structure, a substrate and a lower electrode. Due to the adoption of the guided wave structures with different widths, each distributed feedback laser is provided with the bragg gratings with the same period, and meanwhile, the lasing wavelength has a certain excursion. The array can be used as a multi-wavelength laser and a tunable laser.
Description
Technical field
The present invention relates to a kind of distributed feedback laser array, it is tunable and can multi-wavelength swash a kind of distributed feedback laser array of penetrating especially to relate to excitation wavelength.
Background technology
Popularize and the development of information technology make to network technology require increasingly high, especially increasing to the demand of bandwidth.The development of a new generation such as dense wave division multipurpose and EPON technology has proposed the demand to multi wave length illuminating source.The laser of a plurality of separations no doubt can satisfy the needs to wavelength, but separate between the discrete device, and the working condition of each device differs bigger, causes the overall performance of light source can't guarantee aspect stability, the reliability.Under such background, tunable laser has great advantage.One type of tunable laser perhaps influences laser parameters through modes such as heating through injection current, thereby changes the excitation wavelength of laser; The integrated mode of laser of a plurality of different excitation wavelengths of another kind of employing realizes the tuning of excitation wavelength.The integrated mode of a plurality of lasers can obtain bigger tuning range, more the stability of compact structure and Geng Gao.
It is big that distributed feedback laser has transmitting power, characteristics such as single-mode behavior is good during High Speed Modulation, extensively as light source applications in fields such as optical communication, light sensings.The distributed feedback laser array has been inherited the advantage of single distributed feedback laser, has realized superior tunable performance simultaneously, and simple in structure, and reliability is high, good stability.
The distributed feedback laser array is made up of several distributed feedback lasers, and wherein the excitation wavelength of each laser is gone up one relatively has certain skew.When needing less wavelength variations, it is tuning to the excitation wavelength of a laser to pass through methods such as injection current, control temperature; When needing bigger wavelength variations, can select to swash and penetrate another laser.
The key that realizes the distributed feedback laser array is to let the excitation wavelength of different laser device that certain skew is arranged.The normal at present means that adopt are to change the grating cycle.The method of employing e-beam direct-writing exposure is made Bragg grating can accurately control the grating cycle, but because electron beam lithography speed is slower, and its production capacity is restricted, is difficult to satisfy on a large scale the requirement of low-cost production.Canadian Quantum Device company has set forth the method for utilizing phase mask to make the distributed feedback laser array, yet the phase mask cost is higher, and large-scale application still has problem.At home; The Wuhan Institute of Post and Telecommunication Sciences utilizes the emerging nanometer embossing distributed feedback laser array of having produced 13 channels of success; Damage active layer when but the hard mask that uses of nanometer embossing is made distributed feedback laser easily, it is to be solved that the making that this technology is used for the distributed feedback laser array still has many problems to have.
The another kind of method that realizes the skew of distributed feedback laser excitation wavelength is to utilize the sampling Bragg grating technology.Bragg grating interferes the position of wavelength relevant with the sampling period for 1 grade, interferes wave resonance as long as suppress 0 grade, makes laser interfere wavelength to swash at 1 grade and penetrates, and through the control sampling period, just can control the excitation wavelength of laser.Because the sampling period yardstick of grating is in micron dimension, so the making of sampling grating can adopt holographic exposure to add a ultraviolet photolithographic realization.But up to the present; According to Beijing semiconductor of main this technology of research the report studied of Zhu Hongliang research group, the Chen Xiangfei of Nanjing University professor's electronics and the communication of research group and Korea S; Its Wavelength variable scope of the distributed feedback laser array of used this fabrication techniques still less (being no more than 11nm) is difficult to satisfy actual application requirements.In addition, because the lasing threshold of 1 interference wavelength that the grating sampling is produced will be higher than 0 grade, so the threshold value of the distributed feedback laser of sampling grating will be higher than general distributed feedback laser usually.
Also having class methods is that grating adopts the fixing grating of holographic exposure fabrication cycle, again through the variation of waveguiding structure, changes the waveguide equivalent refractive index and realizes wavelength shift.American I nfinera company utilizes the selective epitaxial technology to go out the active layer of different-thickness in the disposable extension of zones of different, thereby realizes the control to waveguide index.But, just present results reported, this method wavelength shift is limited, generally is no more than 10nm, and one chip is difficult to satisfy the needs of practical application, needs a plurality of chips of encapsulation could cover required wave band, has increased the complexity and the cost of Chip Packaging.
In sum, except adopting high accuracy exposure means such as electron beam, its Wavelength variable scope of distributed feedback laser array of utilizing method such as sampling grating to produce at present is all very limited.The method of producing that lacks the distributed feedback laser array of low cost and high reliability.
Summary of the invention
In order to overcome the deficiency in the background technology scheme, the object of the present invention is to provide simple in structure, easy to make, low-cost, high reliability, a kind of distributed feedback laser array that tuning range is big, it is integrated to be easy to passive wave guides such as wave multiplexer simultaneously.
The technical scheme that the present invention adopts is:
Technical scheme one:
It is to be made up of a plurality of distributed feedback lasers that are arranged in parallel that are produced on the same block semiconductor epitaxial wafer; Semiconductor epitaxial wafer comprises top covering, active layer, wall, refractive index key-course, under-clad layer and substrate from top to bottom successively, and the Bragg grating that is used to form distributed feed-back is arranged in active layer or the refractive index key-course; The cycle of Bragg grating is consistent on the monoblock semiconductor epitaxial wafer; All distributed feedback lasers are vertical with Bragg grating; Top covering, active layer and wall constitute the upper table surface of distributed feedback laser; The refractive index key-course forms guided wave structure formed; Any distributed feedback laser constitutes by a upper table surface and its pairing guided wave structure formed and under-clad layer, substrate and top electrode, bottom electrode jointly in the distributed feedback laser array.
Technical scheme two:
It is to be made up of a plurality of distributed feedback lasers that are arranged in parallel that are produced on the same block semiconductor epitaxial wafer; Semiconductor epitaxial wafer comprises top covering, refractive index key-course, wall, active layer, under-clad layer and substrate from top to bottom successively, and the Bragg grating that is used to form distributed feed-back is arranged in active layer or the refractive index key-course; The cycle of Bragg grating is consistent on the monoblock semiconductor epitaxial wafer; All distributed feedback lasers are vertical with Bragg grating; Top covering constitutes the upper table surface of distributed feedback laser; The refractive index key-course forms guided wave structure formed; Any distributed feedback laser constitutes by a upper table surface and its pairing guided wave structure formed and under-clad layer, substrate and top electrode, bottom electrode jointly in the distributed feedback laser array.
More than in two kinds of technical schemes: upper table surface and guided wave structure formed width increase progressively with the increase of excitation wavelength between different distributed feedback lasers.Refractive index key-course refractive index is greater than the refractive index of top covering (11), under-clad layer.
Compare with background technology, the beneficial effect that the present invention has is:
Through introducing the refractive index key-course; Adopt technologies such as side direction wet etching or selective oxidation to its sideetching, it is guided wave structure formed to form different in width, thereby influences equivalent refractive index; And then make excitation wavelength produce the method for skew, can obtain enough side-play amounts.Guided wave structure formed width changes to 1.6 microns from 0.8 micron can make excitation wavelength 30 nanometers that squint.Each distributed feedback laser has the guided wave structure formed mode of different in width to obtain the skew of excitation wavelength in the employing distributed feedback laser array; Do not require the Bragg grating cycle of each distributed feedback laser in the distributed feedback laser array is made corresponding change; Each laser adopts the Bragg grating of same period in the distributed feedback laser array, therefore can adopt the method for holographic exposure to make, and is convenient to the integrated of distributed feedback laser array and makes; Help encapsulation simultaneously; Simplify technology, reduced cost, improved rate of finished products.In addition, the refractive index key-course also helps making passive structures such as wave multiplexer, is beneficial to the output of different distributions feedback laser in the coupling distributed feedback laser array, and is easy to use.
Description of drawings
Fig. 1 is a kind of sketch map of semiconductor epitaxial chip architecture of distributed feedback laser array.
Fig. 2 is a kind of end view of distributed feedback laser array.
Fig. 3 is the sketch map of the semiconductor epitaxial chip architecture of another kind of distributed feedback laser array.
Fig. 4 is the end view of another kind of distributed feedback laser array.
Fig. 5 is that the basement membrane equivalent refractive index is with guided wave structure formed change width sketch map.
Fig. 6 is that the excitation wavelength side-play amount is with guided wave structure formed change width sketch map.
Fig. 7 is that excitation wavelength side-play amount and space layer concern sketch map.
Among the figure: 1, semiconductor epitaxial wafer, 2, distributed feedback laser; 11, top covering, 12, active layer, 13, the refractive index key-course, 14, wall, 15, under-clad layer, 16, substrate, 21, upper table surface, 22, guided wave structure formed, 23, top electrode, 24, bottom electrode, 121, Bragg grating.
Embodiment
Below in conjunction with accompanying drawing and instance the present invention is further specified.
As shown in Figure 1, a kind of distributed feedback laser array is to be made up of a plurality of distributed feedback lasers that are arranged in parallel 2 that are produced on the same block semiconductor epitaxial wafer 1; Semiconductor epitaxial wafer 1 comprises top covering 11, active layer 12, wall 14, refractive index key-course 13, under-clad layer 15 and substrate 16 from top to bottom successively, and the Bragg grating 121 that is used to form distributed feed-back is arranged in active layer 12 or the refractive index key-course 13; The cycle of Bragg grating 121 is consistent on monoblock semiconductor epitaxial wafer 1.
As shown in Figure 2, all distributed feedback lasers 2 in a kind of distributed feedback laser array are vertical with Bragg grating 121; Top covering 11, active layer 12 and wall 14 constitute the upper table surface 21 of distributed feedback laser 2; Refractive index key-course 13 forms guided wave structure formed 22; In the distributed feedback laser array any distributed feedback laser 2 by a upper table surface 21 with its pairing guided wave structure formed 22 and under-clad layer 15, substrate 16 and top electrode 23, bottom electrode 24 constitute jointly.
As shown in Figure 3, another kind of distributed feedback laser is to be made up of a plurality of distributed feedback lasers that are arranged in parallel 2 that are produced on the same block semiconductor epitaxial wafer 1; Semiconductor epitaxial wafer 1 comprises top covering 11, refractive index key-course 13, wall 14, active layer 12, under-clad layer 15 and substrate 16 from top to bottom successively, and the Bragg grating 121 that is used to form distributed feed-back is arranged in active layer 12 or the refractive index key-course 13; The cycle of Bragg grating 121 is consistent on monoblock semiconductor epitaxial wafer 1.
As shown in Figure 4, all distributed feedback lasers 2 in the another kind of distributed feedback laser array are vertical with Bragg grating 121; Top covering 11 constitutes the upper table surface 21 of distributed feedback laser 2; Refractive index key-course 13 forms guided wave structure formed 22; In the distributed feedback laser array any distributed feedback laser 2 by a upper table surface 21 with its pairing guided wave structure formed 22 and under-clad layer 15, substrate 16 and top electrode 23, bottom electrode 24 constitute jointly.
Distributed feedback laser array in two kinds of schemes, the direction of distributed feedback laser 2 wherein all is the direction of vertical Bragg grating 2, can utilize the distributed feed-back effect of Bragg grating like this.
Bragg grating 121 is produced once therein in semiconductor epitaxial wafer 1 growth course, makes 121 cycles of Bragg grating of distributed feedback laser array consistent.Comprised Bragg grating 121 in active layer 12 or in refractive index key-course 13 interior two kinds of situation.The scheme of Bragg grating 12 in active layer 12 except the index-coupled that distributed feedback laser 2 routines have, also comprised gain coupled.Thereby gain coupled has overcome the reflection peak on both sides, Bragg grating 121 forbidden band has the problem that identical threshold value reduces distributed feedback laser single mode productive rate; Make distributed feedback laser 2 can more work at the edge, forbidden band and near the pattern on the long wave direction, the single wavelength that has guaranteed distributed feedback laser 2 swashs to be penetrated.The scheme of Bragg grating 121 in refractive index key-course 13 avoided the etching to active layer 12, reduced threshold value, and methods such as employing end face coating can remedy yield issues, and two kinds of situation respectively have superiority.
Distributed feedback laser 2 in the same distributed feedback laser array has the upper table surface 21 of different in width, is to start from through technologies such as side direction wet etching, the guided wave structure formed needs of the different in width of producing once.The completion of producing once of whole distributed feedback laser array.
The distributed feedback laser array can be used as tunable laser or multiple-wavelength laser, is because different distributions feedback laser 2 wherein has different excitation wavelengths.Excitation wavelength depends on the cycle of basement membrane equivalent refractive index and Bragg grating 121.Because changing the method in 121 cycles of Bragg grating needs very expensive; The present invention adopts to be easy to realize and ripe technology; All distributed feedback lasers 2 in same distributed feedback laser array all have the cycle of same Bragg grating 121, have different basement membrane equivalent refractive indexs to realize the difference of excitation wavelength through making different distributed feedback laser 2.The difference of basement membrane equivalent refractive index realizes through the difference of guided wave structure formed 22 width.The number of distributed feedback laser 2 depends on that the needs to the excitation wavelength deviation range perhaps depend on swashing the needs of penetrating the different wave length number simultaneously in the use in the distributed feedback laser array.
The basement membrane equivalent refractive index depends on optical field distribution.Active layer 12 is as high refractive index layer, and light field mainly is distributed in wherein, but active layer 12 is applied threshold value and the power output that operation will influence laser.Therefore near active layer 12; Introduce the refractive index key-course 13 that one deck refractive index is higher than top covering 11 and under-clad layer 15; The refractive index of refractive index key-course 13 approaches active layer 12, and this high refractive index layer can influence original basic mode optical field distribution, and the part optical field distribution is accumulated in around it.Refractive index key-course 13 applies operation, can cause the influence of difference slightly to optical field distribution, reaches to change the purpose that the basement membrane equivalent refractive index does not influence the performance of distributed feedback laser 2 simultaneously again.Simultaneously, refractive index key-course 13 can be made passive structures such as wave multiplexer above that as passive layer, the output of all distributed feedback lasers 2 in the whole distributed feedback laser array that helps being coupled.
As shown in Figure 5, reflected the result of basement membrane equivalent refractive index with guided wave structure formed change width, wherein abscissa is guided wave structure formed width, ordinate is the basic mode equivalent refractive index.The present invention makes guided wave structure formed 22 on the refractive index key-course of introducing 13; Through making distributed feedback laser different in the distributed feedback laser array 2 that guided wave structure formed 22 of different in width arranged; Thereby different basement membrane equivalent refractive indexs is arranged, and then make excitation wavelength different.
In certain guided wave structure formed 22, light field by horizontal Electric Field Distribution
longitudinally propagation constant
describe.Pass through Helmholtz equation:
Ask with boundary condition in the concrete structure.
is exactly equivalent refractive index.To one specific guided wave structure formed, analyze equivalent refractive index and combine concrete grating parameter just can obtain its excitation wavelength through methods such as transmission matrix and coupled waves later on again.Bragg equation:
（2）
So just obtain the basement membrane equivalent refractive index and change the relation that squints with excitation wavelength.(3) the formula analysis is the side-play amount of bragg wavelength; Be not real distributed feedback laser excitation wavelength, but tangible change can not take place in the distance between excitation wavelength and the forbidden band central authorities (being bragg wavelength) under the situation that small equivalent refractive index changes.Can think that the side-play amount of bragg wavelength is exactly the side-play amount of distributed feedback laser 2 excitation wavelengths.
As shown in Figure 6, reflected the sketch map of the side-play amount of excitation wavelength with guided wave structure formed 22 change width.Wherein abscissa is guided wave structure formed 22 width, and corresponding ordinate is the side-play amount of excitation wavelength excitation wavelength when being 0.8 micron with guided wave structure formed width relatively, and wall 14 thickness are 0.01 micron simultaneously.Can find out that wherein under the structure of the semiconductor epitaxial wafer that is designed, guided wave structure formed 22 width are when 0.8 micron changes to 1.6 microns, the skew of excitation wavelength can reach 32 nanometers, enough satisfies the interval wave band of 32 channel 50GHz.If the refractive index of refractive index key-course 13 is lower than top covering 11 and under-clad layer 15, then can't assembles enough optical field distribution on it, thereby can't enough influences be arranged the equivalent refractive index, thereby can't realize the skew of tangible excitation wavelength.
Two technical schemes among the present invention, the difference refractive index key-course 13 of core above the active layer 12 or below.This has embodied the influence of these wall 14 thickness between two-layer.Refractive index key-course 13 can make refractive index key-course 13 as far as possible near active layer 12 below active layer 12 on the technology, thereby increases the effect of refractive index key-course 13.
As shown in Figure 7, reflected of the influence of wall 14 thickness to the excitation wavelength side-play amount, wherein abscissa is a space layer, ordinate is the excitation wavelength side-play amount of guided wave structure formed width when being 0.8 micron with guided wave structure formed width relatively when being 1.6 microns.The excitation wavelength side-play amount had reducing clearly when space layer increased.
The scheme of refractive index key-course 13 above active layer 12 avoided in making the process of upper table surface 21, carves the problem of wearing the increase loss that active layer 12 possibly bring, and when making, simplified technology simultaneously.Two kinds of technical schemes respectively have superiority.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection range of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (6)
1. distributed feedback laser array is characterized in that: it is to be made up of a plurality of distributed feedback lasers that are arranged in parallel (2) that are produced on the same block semiconductor epitaxial wafer (1); Semiconductor epitaxial wafer (1) comprises top covering (11), active layer (12), wall (14), refractive index key-course (13), under-clad layer (15) and substrate (16) from top to bottom successively, and the Bragg grating (121) that is used to form distributed feed-back is arranged in active layer (12) or the refractive index key-course (13); The cycle of Bragg grating (121) is consistent on monoblock semiconductor epitaxial wafer (1); All distributed feedback lasers (2) are vertical with Bragg grating (121); Top covering (11), active layer (12) and wall (14) constitute the upper table surface (21) of distributed feedback laser (2); Refractive index key-course (13) forms guided wave structure formed (22); Any distributed feedback laser (2) constitutes by a upper table surface (21) and its pairing guided wave structure formed (22) and under-clad layer (15), substrate (16) and top electrode (23), bottom electrode (24) jointly in the distributed feedback laser array.
2. distributed feedback laser array according to claim 1 is characterized in that: the width of said upper table surface (21) and guided wave structure formed (22) increases progressively with the increase of excitation wavelength between different distributed feedback laser (2).
3. distributed feedback laser array according to claim 1 is characterized in that: said refractive index key-course (13) refractive index is greater than the refractive index of top covering (11), under-clad layer (15).
4. distributed feedback laser array is characterized in that: it is to be made up of a plurality of distributed feedback lasers that are arranged in parallel (2) that are produced on the same block semiconductor epitaxial wafer (1); Semiconductor epitaxial wafer (1) comprises top covering (11), refractive index key-course (13), wall (14), active layer (12), under-clad layer (15) and substrate (16) from top to bottom successively, and the Bragg grating (121) that is used to form distributed feed-back is arranged in active layer (12) or the refractive index key-course (13); The cycle of Bragg grating (121) is consistent on monoblock semiconductor epitaxial wafer (1); All distributed feedback lasers (2) are vertical with Bragg grating (121); Top covering (11) constitutes the upper table surface (21) of distributed feedback laser (2); Refractive index key-course (13) forms guided wave structure formed (22); Any distributed feedback laser (2) constitutes by a upper table surface (21) and its pairing guided wave structure formed (22) and under-clad layer (15), substrate (16) and top electrode (23), bottom electrode (24) jointly in the distributed feedback laser array.
5. distributed feedback laser array according to claim 4 is characterized in that: the width of said upper table surface (21) and guided wave structure formed (22) increases progressively with the increase of excitation wavelength between different distributed feedback laser (2).
6. distributed feedback laser array according to claim 4 is characterized in that: said refractive index key-course (13) refractive index is greater than the refractive index of top covering (11), under-clad layer (15).
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| CN104901160A (en) * | 2015-06-17 | 2015-09-09 | 中国科学院半导体研究所 | Dry method PE method of distributed feedback laser based on nanometer impression rasters |
| CN105164874A (en) * | 2012-11-30 | 2015-12-16 | 统雷量子电子有限公司 | Multiwavelength quantum cascade laser via growth of different active and passive cores |
| CN109565152A (en) * | 2016-08-10 | 2019-04-02 | 浜松光子学株式会社 | Light emitting device |
| US20190312410A1 (en) * | 2017-03-27 | 2019-10-10 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
| CN111257996A (en) * | 2020-03-18 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Birefringent waveguide Bragg grating reflector and preparation method thereof |
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| US11031747B2 (en) | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
| US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
| US20190312410A1 (en) * | 2017-03-27 | 2019-10-10 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
| US11637409B2 (en) | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
| US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
| US11777276B2 (en) | 2017-03-27 | 2023-10-03 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
| US11686956B2 (en) | 2017-06-15 | 2023-06-27 | Hamamatsu Photonics K.K. | Light-emitting device |
| US11626709B2 (en) | 2017-12-08 | 2023-04-11 | Hamamatsu Photonics K.K. | Light-emitting device and production method for same |
| CN111257996A (en) * | 2020-03-18 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Birefringent waveguide Bragg grating reflector and preparation method thereof |
| CN111600198A (en) * | 2020-05-26 | 2020-08-28 | 陕西源杰半导体技术有限公司 | Ultra-high-power laser for communication and preparation method thereof |
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Application publication date: 20120815 |