CN105281199B - The V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe - Google Patents
The V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe Download PDFInfo
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- CN105281199B CN105281199B CN201510711347.1A CN201510711347A CN105281199B CN 105281199 B CN105281199 B CN 105281199B CN 201510711347 A CN201510711347 A CN 201510711347A CN 105281199 B CN105281199 B CN 105281199B
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Abstract
The invention discloses a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe.First active resonant cavity and the second active resonant cavity are coupled to form Multiple modes coupling area with V-arrangement at one end, the end face in Multiple modes coupling area has Cavity surface reflecting surface, passes through an arm of deep etching groove laser in series between the other end of the first active resonant cavity and the first passive filter；Pass through another arm of deep etching groove laser in series between the other end of second active resonant cavity and the second passive filter；First active resonant cavity and the second active resonant cavity are provided with shallow etching groove.The laser of the present invention has compact-sized, and manufacture craft is simple, and cost is relatively low, the advantages that without external reference light source.
Description
Technical field
The present invention relates to Microwave photonics field, more particularly to one kind to be used for single-chip integration and frequency interval caused by microwave
The V-type coupler two-wavelength semiconductor laser of continuously adjustabe.
Background technology
The signal of microwave frequency band has very important answer in numerous areas such as radio communication, radar detection, microwave sensings
With.Drastically soaring and " mobile Internet " the rapid hair particularly required recently as user wireless data traffic
Exhibition, high-speed wideband wireless communication technology turns into the developing direction of next generation wireless communication technology, also as the new increasing of the market demand
Long point.And microwave photon technology, particularly core technology of the generation of microwave light source as " mobile Internet ", just as each
Research group and the study hotspot of academic institution.
It is the major way for realizing photoproduction microwave carrier based on two beam close-spaced wavelength beat frequencies generation microwave carrier.At present
The technology of report mainly includes three classes：It is based on how grating coupled optical fiber laser or semiconductor laser；It is non-based on optics
Linear effect produces the microwave light-source system of high-frequency microwave carrier wave；And the semiconductor laser based on coupler coupling.
Based on grating coupled optical fiber laser because its grating can be made very long, and there is very long gain region, and
And the complicated control device such as Polarization Control or PGC demodulation can be carried out, typically with preferable spectral characteristic and microwave spectrum
Characteristic, but its untunable, complex manufacturing technology that microwave frequency be present, systems bulky, the shortcomings of cost is higher.
And the microwave light-source system based on fiber nonlinear effect is generally possible to realize the continuously adjustabe of microwave frequency, and
Typically there is good phase correlation between dual wavelength based on nonlinear effect, narrower Microwave Frequency spectral line can be realized
Width, generally comprise based on technology, note caused by intensity modulated, phase-modulation, four-wave mixing or stimulated Brillouin scattering equiband
Enter the multiple technologies such as lock-in techniques and PHASE-LOCKED LOOP PLL TECHNIQUE.But itself needs to provide an accurate microwave local oscillator, technology
The shortcomings of realization is complicated, and system is huge, and cost is high.
Generation for microwave carrier, it usually needs laser produces two close on, frequency intervals and intensity stabilization
Dual wavelength.Most common structure is namely based on the structure of the DFB series coupleds of two different screen periods.Fig. 1 is based on grating
The two-wavelength semiconductor laser schematic diagram of coupling, is reported in " Dual-wavelength InGaAs-GaAs ridge
waveguide distributed Bragg reflector lasers with tunable mode separation.",
Roh,S.D,et al.Photonics Technology Letters,IEEE 12.10(2000):1307-1309, due to light
The modeling effect of grid, this kind of laser typically have good unimodular property and frequency stability.But this kind of laser is related to multiple
Miscellaneous preparing grating and secondary epitaxy growth, cost are very high.
In order to provide cheap dual wavelength frequency interval semiconductor laser with tunable, what is built up the Army proposed one in 2005
Two-wavelength semiconductor laser of the kind based on the coupling of multistage FP resonators, is disclosed in U.S. patent Nos："Dual-
Wavelength semiconductor laser ", publication number：US20050243882 A1.Fig. 2 is that the structure of the laser is shown
It is intended to.It is in series by three sections of Fabry-Perot cavities coupled by deep etching groove, and the width of each deep etching groove is equal
For quarter-wave odd-multiple.Wherein adjacent two-stage method Fabry-Perot-type resonator has equal optical length, is used for
Produce a series of dual wavelength comb spectrum.The shorter Fabry-Perot etalon of another segment length is selected wherein as wave filter
Some double wave long pattern.This kind of laser can realize the continuous tuning of dual wavelength frequency interval, and cost of manufacture also compares
It is low.But due to the limitation of manufacture craft precision, the width of deep etching groove is difficult accurately to control, while the size of device also compares
Long, the yield rate of making is not high.
The content of the invention
In view of the shortcomings of the prior art, the present invention is directed to propose a kind of V-type coupler of frequency interval continuously adjustabe is double
The advantages that long wavelength semiconductor laser, it has microwave frequency continuously adjustabe, compact-sized, and manufacture craft tolerance is larger, avoids
Point-device technique preparation condition, while there is the series of advantages of coupled-cavity semiconductor laserses.
The technical solution adopted by the present invention is：
The laser of the present invention includes the first active resonant cavity, the second active resonant cavity, the first passive filter and second
Passive filter, it is coupled to form Multiple modes coupling area, shape with V-arrangement between the first active resonant cavity and second active resonant cavity one end
Into v-shaped cavity, the end face in Multiple modes coupling area has Cavity surface reflecting surface, and Multiple modes coupling area is quarter-wave coupled zone, i.e. multimode
There is 90 ° of phase difference between the straight-through coefficient of coup and cross-coupling coefficient of coupled zone；The other end of first active resonant cavity
And first pass through an arm of deep etching groove laser in series between passive filter；The other end of second active resonant cavity and
Pass through another arm of deep etching groove laser in series between second passive filter；First where Multiple modes coupling area is active
The shallow etching groove for being electrically isolated, multimode coupling are provided between one section of waveguide of resonator and remaining waveguide of the first active resonant cavity
Close the second active resonant cavity where area one section of waveguide and the second active resonant cavity in be provided between remaining waveguide be used for electricity every
From shallow etching groove.
The first described active resonant cavity has equal optical length with the second active resonant cavity.
The first described passive filter and the optical length of the second passive filter are a quarter laser emitting ripple
Long odd-multiple and different.
Deep etching groove and the second active resonant cavity between first active resonant cavity and the first passive filter and
The optical length of deep etching groove between two passive filters is the odd-multiple of a quarter laser emitting wavelength.
Described Multiple modes coupling area is provided with the fine tuning phase electrode for phase adjustment.
First active resonant cavity and second active resonant cavity in addition to Multiple modes coupling area are respectively equipped with first
Gain tuning electrode and the second gain tuning electrode.
The first wave of refractive index adjustment is respectively provided with described the first passive filter and the second passive filter
Long trimming electrode and second wave length trimming electrode, for realizing the alignment of laser excitation mode and filter center
Preferably, the first described active resonant cavity can use active Fabry-Perot humorous with the second active resonant cavity
Shake chamber.
Preferably, the first described passive filter and the second passive filter can use passive Fabry-Perot humorous
Shake chamber.
Two sections of active resonant cavities of the present invention will produce a series of dual-wavelength lasing when electrical pumping reaches gain for threshold value
Mould, passive filter select one of double wave long pattern as bandpass filter, between the dual wavelength frequency of laser output
Every with two-arm Injection Current than change and change, pass through high speed detector and receive and produce the microwave carrier of corresponding difference frequency and believe
Number.The present invention can be by changing the Injection Current ratio of two-arm active area, it is possible to achieve microwave carrier frequency it is tunable.Passive filter
It also is provided with tuning electrode on ripple device, for realizing the alignment of excitation wavelength and filter passband center, improves double wave long pattern
Mode selective.
The present invention has an advantageous effect in that compared with background technology：
The present invention need not make grating, low manufacture cost.
The v-shaped cavity structure of the present invention can reduce the length of device, make device architecture compacter simple.
The quarter-wave coupler of the present invention is provided with tuning electrode, the phase of fine-tuning coupler, increases device
The tolerance of part, improve the yield rate of device.
The present invention need not set external microwave signal source, reduce the complexity and cost of system.
Two sections of active areas are provided with gain-adjusted electrode in the present invention, can be by simply adjusting the gain between two-arm
Difference can be achieved with the continuous tuning of frequency interval between dual wavelength, and tuning algorithm is simple.
Two passive filters of the invention are provided with wavelength trimming electrode, for finely tuning the refractive index of passive wave guide, realize
The alignment of passive filter bandpass center and excitation wavelength, preferable mode selective and larger free light can be realized simultaneously
Spectral limit.
Summary, volume small size of the present invention is short, and required precision of the manufactured device performance to etching well width be not high,
Etching width easily accurately controls, and manufacture craft is simple, and cost of manufacture can substantially reduce, and has bigger development prospect and business
Industry application value.
Brief description of the drawings
Fig. 1 is to be based on grating coupled adjustable frequency interval two-wavelength semiconductor laser schematic diagram in background technology.
Fig. 2 is the adjustable frequency interval two-wavelength semiconductor laser schematic diagram based on etching groove coupling in background technology.
Fig. 3 is the structural representation of the present invention.
Fig. 4 is the cross-sectional view of fine tuning phase electrode of the present invention.
Fig. 5 is cross-sectional view of the arm of the invention along waveguide transmission direction.
Fig. 6 is transmissivity and the reflectivity and the graph of a relation of groove width of deep etching air groove at a wavelength of 1550 run.
Fig. 7 is small-signal gain spectrogram under threshold value of the embodiment of the present invention when not considering passive wave guide wave filter.
Fig. 8 is gain for threshold value spectrogram of the embodiment of the present invention when not considering passive wave guide wave filter.
Fig. 9 be the embodiment of the present invention when not considering passive wave guide wave filter, two-arm it is different injection gains in the case of
Small-signal gain spectrogram under threshold value.
Figure 10 be the embodiment of the present invention when not considering passive wave guide wave filter, dual wavelength frequency interval and two-arm gain inequality
Graph of a relation.
Figure 11 be the embodiment of the present invention when not considering passive wave guide wave filter, dual wavelength peak frequency interval and active ripple
The graph of a relation of guide cavity length.
Figure 12 be the embodiment of the present invention when not considering passive wave guide wave filter, in the case of two kinds of different brachiums dual wavelength frequency
Rate interval and the graph of a relation of the straight-through coefficient of coup.
Figure 13 is the reflectance spectrum and its superposition spectrogram of two sections of passive wave guide wave filters of the embodiment of the present invention.
Figure 14 is embodiment small-signal gain spectrogram in the case where considering two sections of filtered threshold values of passive wave guide.
Figure 15 is that inventive embodiments are considering the filtered gain for threshold value spectrogram of two sections of passive wave guides.
In figure：1st, Multiple modes coupling area, the 2, first active resonant cavity, the 3, second active resonant cavity, the 4, first passive filter,
5th, the second passive filter, 6, deep etching groove, 7, Cavity surface reflecting surface, 8, fine tuning phase electrode, the 9, first gain-adjusted electrode,
10th, the second gain-adjusted electrode, the 11, first passive filter regulation electrode, the 12, second passive filter regulation electrode, 13, on
Covering, 14, active area, 15, cushion, 16, substrate layer, 17, backplate, 18, shallow etching groove.
Embodiment
Below according to drawings and examples, the present invention is described in detail.
The present invention is intercoupled to produce double wave using the semiconductor laser based on coupler coupling using multistage FP chambers
Long, with respect to the first two method in background technology, microwave spectrum line width caused by it has certain broadening, but due to two beam wavelength
A gain cavity is shared, there is identical external environment, also there is stronger phase correlation between two wavelength, can realize
Preferable microwave spectrum characteristic.
Embodiments of the invention and its operation principle are as follows：
In specific implementation, as shown in figure 3, the present invention includes two sections of isometric active Fabry-Perot cavities and two
The passive Fabry-Perot cavity of section Length discrepancy, the two-arm of v-shaped cavity is of coupled connections by quarter-wave coupled zone 1, more
The end face in mode coupling area 1 has a Cavity surface reflecting surface 7, and each arm of v-shaped cavity is all by active Fabry-Perot cavity and passive
Fabry-Perot etalon is in series, the straight-through coefficient of coup and cross-couplings of the quarter-wave coupled zone formed
There is 90 ° of phase difference between coefficient.It is located at the portion in Multiple modes coupling area 1 in first active resonant cavity 2 and the second active resonant cavity 3
Divide the shallow etching groove 18 being equipped with the remainder joining place of active resonant cavity for electric isolution.
Pass through deep etching between first active 2 and first passive Fabry-Perot cavity 4 of Fabry-Perot cavity
One arm of 6 laser in series of groove, the second active 3 and second passive Fabry-Perot cavity of Fabry-Perot cavity
Pass through another arm of 6 laser in series of deep etching groove between 5；Active Fabry-Perot cavity 2 and active Fabry-
Connected between Perot resonator cavity 3 by one section of quarter-wave coupler.Coupled zone is provided with fine tuning phase electrode 8, two-arm
Active resonant cavity is provided with gain-adjusted electrode 9 and 10, and two-arm passive filter is provided with refractive index trimming electrode 11 and 12.
Here the straight-through coefficient of coup of definition is active Fabry-Perot cavity after the end face reflection in Multiple modes coupling area 1
The distribution of light intensity of itself resonator and the ratio of incident field intensity are returned to, cross-coupling coefficient is that active Fabry-Perot is humorous
The chamber that shakes enters ratio of the distribution of light intensity with incident field intensity of another resonator after the end face reflection in Multiple modes coupling area 1.
During laser works, quarter-wave coupler and two sections of equal Fabry-Perot active cavities are in electrical pumping
Under the conditions of a series of dual wavelength comb spectrum occurs.The slightly shorter Fabry-Perot cavity of length is used for selecting as wave filter
Go out a pair of dual wavelengths therein as final lasing mould.The beat signal of the dual wavelength of output can pass through high speed photodetector
Reception changes into corresponding microwave carrier signals.By adjusting the Injection Current ratio of two-arm active resonant cavity, can adjust double
Frequency interval between wavelength, and ensure that output intensity is constant, so as to realize the tunable of microwave carrier signals.For passive filter
Ripple device, the effective refractive index of waveguide can be changed by carrier injection effect or reverse-biased electrooptic effect, be fed back using electricity
Signal controls the centre wavelength of passive filter, so as to stablize the relative intensity between two wavelength.
With respect to the two-wavelength semiconductor laser of etching groove coupling, the semiconductor laser based on quarter-wave coupler
Device considerably increases laser process because the bias current in coupler electrode can provide a range of phase compensation
Tolerance is made, improves the yield rate of element manufacturing.The structure of v-shaped cavity also makes the size of device compacter simultaneously, improves
The integrated level of device.
As shown in figure 4, the stratiform of the laser of specific implementation is by substrate layer 16, cushion 15, the core for providing optical gain
Layer 14 and top covering 13 are formed, and the upper and lower surface of device can plate different electrode matel materials and form P-type electrode
And N-type electrode, first, second gain-adjusted electrode 9 and 10 are used as P-type electrode, the backplate 17 of the bottom of substrate layer 16 is used as N
Type electrode.Optical gain so can be provided by electrical pumping.Generally sandwich layer is made up of multiple quantum well layer, and according to not
Same situation carries out a certain amount of doping.From cross section, light is typically limited using ridge waveguide or the waveguide of burial type
.
As shown in figure 5, in addition to being separated between active waveguide and passive filter with deep etching groove 6, quarter-wave
Also needed between the gain electrode on fine tuning phase electrode and active resonant cavity on long coupler shallow etching groove 18 carry out electricity every
From.
Deep etching groove in laser structure is used as the high reflection face of resonator.In order to reach higher reflectivity,
The width of deep etching groove must be quarter-wave odd-multiple.The transmissivity and reflectivity of air deep etching groove and groove width
Relation as shown in fig. 6, it can be seen that, the maximum of reflectivity only just occurs in the position of quarter-wave odd-multiple.Reason
By upper, it is lost when air well width is quarter-wave minimum, with the increase of groove width, light field is due in air groove
Pattern spreads the increase that can cause loss with diffraction effect, therefore the peak value of reflectivity is being gradually reduced.On the other hand, groove width
Reduce the required precision more and more higher to manufacture craft.For 1550nm wavelength, quarter-wave is only
0.3875um, common photoetching process are difficult to meet to require.For current technique, the error that air groove makes is in ± 0.1um amounts
Level, general to use 5/4 λ in order to meet technologic requirement, i.e. 1.94um, wherein λ are the operation wavelength of laser.
In order to illustrate the operation principle of dual laser, the laser knot not comprising passive filter is only considered first
Structure, the small signal gain spectrum for not including the v-shaped cavity laser under filter conditions is calculated with transfer matrix method, as shown in Figure 7.It is false
The effective refractive index for determining laser is 3.29, a length of L of chamber of two active resonant cavities1=L2=210.1um, quarter-wave
The straight-through coefficient of coup of coupler is 0.6, and two-arm possesses equal gain coefficient (g1=g2=29.9cm-1), it is possible to find
A series of dual wavelength comb spectrum, the wavelength interval between dual wavelength is 0.42nm, Free Spectral Range 1.6nm.Corresponding feelings
Gain for threshold value spectrum under condition is as shown in Figure 8, it is possible to find quarter-wave coupler does not have mode selective, all double waves
Long pattern can starting of oscillation simultaneously.
Small signal gain spectrum of the laser two-arm under the conditions of injection equal gain and different gains is as shown in figure 9, laser
Device parameter setting is the long L of active cavity chamber1=L2=210.1um, the straight-through coefficient of coup of quarter-wave coupler is 0.8.When
(the first gain and the second gain are g1=g2=29.87cm respectively when two-arm injects equal gain-1), small signal gain spectrum and figure
7 is identical, and the wavelength interval between dual wavelength is 0.356nm, and respective frequencies are at intervals of 44.5GHz, as indicated by the solid line in fig. 9.Such as
Gain inequality between fruit increase two-arm, the frequency interval between dual wavelength can reduce.As shown in phantom in Figure 9, g1=0cm is worked as-1,
G2=59.7cm-1When, the wavelength interval between dual wavelength is 0.152nm, and respective frequencies are at intervals of 19GHz.Figure 10 gives
When not considering passive wave guide wave filter, the relation of gain inequality between dual wavelength frequency interval and two-arm, setting two is active here
The long L of chamber of resonator1=L2=210.1um, it is 0.6 to lead directly to the coefficient of coup, it can be found that when two-arm has equal gain,
Frequency interval between dual wavelength is maximum, and with the increase of gain inequality between two-arm, the frequency interval between dual wavelength gradually subtracts
It is small.
Figure 11 be the embodiment of the present invention when not considering passive wave guide wave filter, dual wavelength peak frequency interval (corresponding two
Arm possesses equal gain coefficient) and active cavity chamber length relation.The straight-through coefficient of coup of coupler is set to 0.6, it is found that
Reduced with the increase that chamber is grown at dual wavelength peak frequency interval.
Figure 12 gives dual wavelength peak frequency interval (corresponding two-arm possesses equal gain coefficient) and quarter-wave
The relation that long coupler is led directly between the coefficient of coup.As coupler leads directly to the increase of the coefficient of coup, between dual wavelength peak frequency
Also every gradually decreasing, therefore the chamber of laser can be reasonably selected to grow and the parameter of coupler as needed.
It is a certain in dual wavelength frequency comb in order to select because quarter-wave coupler does not have mode selective in itself
Individual double wave long pattern is as lasing mould, it is necessary to be filtered modeling using passive filter.Figure 13 gives the embodiment of the present invention
Two sections of passive wave guide wave filters reflectance spectrum and its stack spectral.The chamber length of laser two-arm is set to L1=L2=210um, etching
The width of groove is set to 5/4 λ, and the length of two sections of passive filters is respectively Lf1=19.9um and Lf2=61.4um.Positioned at wave filter
The pattern at center will have minimum gain for threshold value and lasing.The Free Spectral Range of wave filter is determined by the chamber length of wave filter
It is fixed, meet △ f=c/2ngLp, wherein, c be vacuum in the light velocity, ngThe group velocity transmitted in the waveguide for light, LpFor passive filter
The chamber length of ripple device.In order that an only double wave long pattern lasing in gain spectral, one of filter length must be enough
It is short, to ensure that its Free Spectral Range is more than the gain spectrum width of laser.But half of filter function corresponding to shorter wave filter
High overall with is wider, and model selection ratio is not high, and this can be narrower to realize simultaneously by increasing a longer passive filter
Filter function and wider Free Spectral Range.Corresponding small signal gain spectrum such as Figure 14 including after two passive filters
It is shown, it is found that only double wave long pattern can starting of oscillation, Figure 15 then composes for corresponding gain for threshold value.It is right by graph discovery
Answering the position of filter center wavelength has minimum gain for threshold value, is 44.5cm-1, the gain for threshold value of adjacent double wave long pattern
For 49.5cm-1, gain for threshold value difference has reached 5cm-1, has good mode selective.
If the centre wavelength of wave filter can be directed at the center of double wave long pattern, the two patterns can have identical threshold
It is worth gain starting of oscillation simultaneously, and there is identical power output.But because mode competition or temperature drift etc. be present not in intracavitary
Certain shake occurs in ballast, the power output of two wavelength., can be with order to stablize the relative intensity between dual wavelength
Electrical feedback signal is loaded on passive filter, the middle cardiac wave of wave filter is finely tuned by changing the refractive index of passive filter
It is long.Electrical feedback signal can be used as negative-feedback by integrated light detector on piece or outside chamber by the use of the beat signal of dual wavelength
To stablize the intensity of the microwave carrier signals of PD outputs.
For passive filter, can be realized by etching the method for the bigger passive wave guide of regrowth energy gap,
Can be by way of some chips post-process, such as quantum well mixing technology.If manufacture craft does not allow, can also pass through
By active filter electrical pumping to realizing just below gain for threshold value.
Summary, size of the present invention is small, and manufacture craft is simple, and the introducing of quarter-wave coupler is except can be real
The dual-wavelength lasing of existing laser, also greatly increases the manufacture craft tolerance of device, improves the yield rate of device, has prominent
Go out significant technique effect.In addition, the present invention can use simple calculate without introducing under conditions of outside local oscillator light source
Method realizes the continuously adjustabe of dual wavelength frequency interval, and the stabilization of microwave power and frequency can also be realized using negative-feedback signal,
With very big development prospect and commercial application value.
Above-described embodiment is used for illustrating the present invention, rather than limits the invention.The present invention spirit and
In scope of the claims, to any modifications and changes of the invention made, protection scope of the present invention is both fallen within.Such as chamber
An air groove between chamber can be replaced with multiple air grooves, and the number of passive etalon can be one or more,
More preferable performance of filter can be realized as needed.That is filled between deep etching groove is not necessarily air, can also be
SiO2, the material that is often related in the semiconductor technology such as SiN or BCB.The end face of laser can both use deep etching groove, deep etching
Face defines, and can also be defined with cleaved facets.The end face of Cavity surface can be can also meet different situations by plated film
Under demand etc..
Claims (9)
1. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe, including the first active resonant cavity
(2), the second active resonant cavity (3), the first passive filter (4) and the second passive filter (5)；It is characterized in that：First has
It is coupled to form Multiple modes coupling area (1), Multiple modes coupling area with V-arrangement between source resonator (2) and the second active resonant cavity (3) one end
(1) end face has Cavity surface reflecting surface (7), and Multiple modes coupling area (1) is quarter-wave coupled zone；First active resonant cavity
(2) deep etching groove (6) laser in series between the other end and the first passive filter (4) by being reflected for part
An arm；It is deep by being reflected for part between the other end and the second passive filter (5) of second active resonant cavity (3)
Lose another arm of groove (6) laser in series；The first active resonant cavity (2) waveguide and first where Multiple modes coupling area (1)
Between active resonant cavity (2) remaining waveguide be provided with for be electrically isolated shallow etching groove (18), second where Multiple modes coupling area (1)
The shallow etching groove (18) for being electrically isolated is provided between active resonant cavity (3) waveguide and the second active resonant cavity (3) remaining waveguide.
2. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Described the first active resonant cavity (2) has equal optical length with the second active resonant cavity (3).
3. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Described the first passive filter (4) and the optical length of the second passive filter (5) are a quarter laser
It is emitted the odd-multiple of wavelength and different.
4. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Deep etching groove (6) and second between first active resonant cavity (2) and the first passive filter (4) is active
The optical length of deep etching groove (6) between resonator (3) and the second passive filter (5) is a quarter laser emitting ripple
Long odd-multiple.
5. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Described Multiple modes coupling area (1) is provided with fine tuning phase electrode (8).
6. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：First active resonant cavity (2) and second active resonant cavity (3) point in addition to Multiple modes coupling area (1)
She You not the first gain tuning electrode (9) and the second gain tuning electrode (10).
7. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：First wave length trimming electrode is respectively equipped with described the first passive filter (4) and the second passive filter (5)
And second wave length trimming electrode (12) (11).
8. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Described the first active resonant cavity (2) uses active Fabry-Perot resonance with the second active resonant cavity (3)
Chamber.
9. a kind of V-type coupler two-wavelength semiconductor laser of frequency interval continuously adjustabe according to claim 1, its
It is characterised by：Described the first passive filter (4) and the second passive filter (5) use passive Fabry-Perot resonance
Chamber.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0602839A1 (en) * | 1992-12-17 | 1994-06-22 | AT&T Corp. | Asymmetric Y-branch optical device |
| CN203589448U (en) * | 2013-11-05 | 2014-05-07 | 浙江大学 | High-speed directly modulation V-type coupled cavity tunable semiconductor laser |
| CN205122996U (en) * | 2015-10-28 | 2016-03-30 | 浙江大学 | Frequency interval continuously adjustable V type coupled cavity dual wavelength semiconductor laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7738527B2 (en) * | 2005-12-30 | 2010-06-15 | Jian-Jun He | Wavelength switchable semiconductor laser using half-wave coupled active double-ring resonator |
-
2015
- 2015-10-28 CN CN201510711347.1A patent/CN105281199B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0602839A1 (en) * | 1992-12-17 | 1994-06-22 | AT&T Corp. | Asymmetric Y-branch optical device |
| CN203589448U (en) * | 2013-11-05 | 2014-05-07 | 浙江大学 | High-speed directly modulation V-type coupled cavity tunable semiconductor laser |
| CN205122996U (en) * | 2015-10-28 | 2016-03-30 | 浙江大学 | Frequency interval continuously adjustable V type coupled cavity dual wavelength semiconductor laser |
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