CN105280780A - Package structure, method for fabricating the same and carrier thereof - Google Patents
Package structure, method for fabricating the same and carrier thereof Download PDFInfo
- Publication number
- CN105280780A CN105280780A CN201410789533.2A CN201410789533A CN105280780A CN 105280780 A CN105280780 A CN 105280780A CN 201410789533 A CN201410789533 A CN 201410789533A CN 105280780 A CN105280780 A CN 105280780A
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- Prior art keywords
- luminescence component
- conductive
- making
- cladding
- encapsulating
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Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004020 luminiscence type Methods 0.000 claims description 119
- 238000005253 cladding Methods 0.000 claims description 59
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004568 cement Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000011469 building brick Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 be white glue Chemical compound 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
Abstract
A package structure and its making method and bearing part are disclosed, which includes providing multiple conducting parts and luminous components, wrapping the luminous components and the conducting parts by a wrapping body, connecting the luminous components and the conducting parts by a conductive component, insulating the side of the luminous components by the wrapping body, and forming the conductive component, so that the conductive component can be formed in multiple modes.
Description
Technical field
The present invention relates to a kind of encapsulating structure and method for making, espespecially a kind of illuminated encapsulating structure and method for making.
Background technology
Flourish along with electronic industry, electronic product is tending towards compact in kenel, functionally then marches toward the R&D direction of high-performance, high function, high speedization gradually.Wherein, light-emitting diode (LightEmittingDiode, LED) because having, the life-span is long, volume is little, high vibration strength and the advantage such as power consumption is low, so be widely used in the electronic product of irradiation demand, therefore, the application in industrial, various electronic product, life household electrical appliances is increasingly universal.
Figure 1A to Figure 1B is the generalized section of the method for making disclosing a kind of existing LED encapsulation piece 1.This method for making is prior to a substrate 10 being formed a reflector 11, and this reflector 11 has an opening 110, one LED component 12 is set again in this opening 110, multiple wire 120 as gold thread is utilized to be electrically connected this LED component 12 and this substrate 10, finally with this LED component 12 coated of the packing colloid 13 with phosphor powder layer afterwards.
So, in the method for making of existing LED encapsulation piece 1, first electric connection processing procedure is carried out, form this packing colloid 13 again, so in time carrying out electric connection processing procedure, the side due to this LED component 12 there is no any isolation material, thus only can select routing operation (as formed this wire 120); If choice for use conducting resinl, then the easy overflow of conducting resinl is to the side of this LED component 12, the front of this LED component 12 (P pole) is electrically conducted mutually with side (N pole), thus causes short circuit phenomenon.
Therefore, the selection kind of the conductive component of existing LED encapsulation piece 1 is limited, so how to overcome conductive component of the prior art to select limited problem, has become the problem of desiring most ardently solution at present in fact.
Summary of the invention
In view of the disappearance of above-mentioned prior art, the invention provides a kind of encapsulating structure and method for making thereof and bearing part, choosing multiple mode forms this conductive component.
Encapsulating structure of the present invention, it comprises: at least one luminescence component, and it has the side of relative non-luminescent side and emission side and this non-luminescent side adjacent and this emission side; Cladding, it directly covers the side of this luminescence component, makes the emission side of luminescence component expose to this cladding; Multiple conductive part, it is bonded in this cladding, makes the space between the side of this luminescence component and this conductive part be this cladding institute filling of part; And at least one conductive component, it is located at this cladding on the surface and link this luminescence component and those conductive parts.
The present invention also provides a kind of method for making of encapsulating structure, and it comprises: provide multiple conductive part and at least one luminescence component, and this luminescence component has the side of relative non-luminescent side and emission side and this non-luminescent side adjacent and this emission side; With cladding this luminescence component coated and those conductive parts, and this cladding directly covers the side of this luminescence component, be this cladding institute filling between making between the side of this luminescence component and this conductive part, make the emission side of luminescence component and those conductive parts expose to this cladding; And form at least one conductive component in this cladding surface, make this conductive component link this luminescence component and those conductive parts.
The present invention also provides a kind of bearing part, and it comprises: at least one positioning part; And multiple conductive part, itself and this positioning part is positioned on same plane benchmark, and the height of this conductive part is greater than the height of this positioning part.
As from the foregoing, encapsulating structure of the present invention and method for making thereof, by the side first covering this luminescence component with cladding, make the side of this luminescence component isolated extraneous, form this conductive component again, so choosing multiple mode forms this conductive component, select limited problem to overcome conductive component of the prior art.
Accompanying drawing explanation
Figure 1A to Figure 1B is the generalized section of the method for making of existing LED encapsulation piece;
Fig. 2 A to Fig. 2 G is the generalized section of the method for making of encapsulating structure of the present invention; Wherein, Fig. 2 B ' is the upper schematic diagram of Fig. 2 B, another embodiment that Fig. 2 D ' is Fig. 2 D, the different embodiments that Fig. 2 E ' is Fig. 2 E, Fig. 2 G ' and Fig. 2 G " be the different embodiments of Fig. 2 G;
Fig. 3 A to Fig. 3 C is the generalized section of another embodiment of method for making of encapsulating structure of the present invention;
Fig. 4 A to Fig. 4 C is the generalized section of another embodiment of method for making of encapsulating structure of the present invention; Wherein, Fig. 4 C ' another embodiment that is Fig. 4 C;
Fig. 5 A and Fig. 5 B is section and the upper schematic diagram of another embodiment of encapsulating structure of the present invention;
Fig. 6 A to Fig. 6 D is the generalized section of another embodiment of method for making of encapsulating structure of the present invention;
Fig. 7 A to Fig. 7 D is the generalized section of another embodiment of method for making of encapsulating structure of the present invention;
Fig. 8 A and Fig. 8 B is section and the upper schematic diagram of another embodiment of encapsulating structure of the present invention; And
Fig. 9 is the generalized section of another embodiment of encapsulating structure of the present invention.
Primary clustering symbol description
1LED packaging part
10 substrates
11 reflectors
110,202,500a opening
12LED assembly
120,83 wires
13 packing colloids
2,2 ', 2 " encapsulating structure
20,80,90 bearing parts
20 ' base material
20a first side
20b second side
200,300,400,400 ', 500,600,700,800,900 conductive parts
200a upper surface
400a inclined-plane
201,301,801,901 positioning parts
203 conduits
204 linking parts
205 location holes
21,31,41,51,61,71,81,91 luminescence components
21a, 31a, 41a, 61a, 71a emission side
21b, 31b, 41b, 61b, 71b non-luminescent side
21c, 31c, 41c side
210,310,410,610,710 electrodes
22,32,42,52,62,72 claddings
22a first surface
22b second surface
23,23 ' conductive component
24,24 ", 34,44,64,74,84,94 fluorescence coatings
240 fluorescent grains
25,35,45,65,75,85,95 photic zones
3 moulds
30 fractal films
46,66,76 carriers
50 bearing parts
500b, 803 grooves
611,711 substrates
671,67,77,771 release films
802 insulating cements
H, h height
X horizontal line.
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, those skilled in the art can understand other advantage of the present invention and effect easily by content disclosed in the present specification.
Notice, structure, ratio, size etc. that this specification institute accompanying drawings illustrates, content all only for coordinating specification to disclose, for understanding and the reading of those skilled in the art, be not intended to limit the enforceable qualifications of the present invention, so the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the present invention can produce and the object that can reach, still all should drop on disclosed technology contents and obtain in the scope that can contain.Simultaneously, quote in this specification as " on ", " first ", " second " and " one " etc. term, be also only be convenient to describe understand, but not for limiting the enforceable scope of the present invention, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the present invention.
Refer to Fig. 2 A to Fig. 2 G, it is the generalized section of the method for making of encapsulating structure of the present invention.
As shown in Figure 2 A, provide a metal base 20 ', this base material 20 ' has the first relative side 20a and the second side 20b.
As shown in Fig. 2 B and Fig. 2 B ', etching and half-etching technology is utilized to remove the part material of the first side 20a of this base material 20 ' to form multiple positioning part 201, and the first side 20a of this base material 20 ' do not remove part be as multiple conductive part 200, and be through to this second side 20b to form opening 202 and the conduit 203 of this first side 20a of multiple connection and the second side 20b by the first side 20a of this base material 20 ', use and produce multiple bearing part 20 as lead frame.
In the present embodiment, Fig. 2 B is the profile of the B-B hatching of Fig. 2 B ', and because of the processing procedure around each this bearing part 20 identical, so only illustrate this bearing part 20 single, so that explanation.
In addition, each this bearing part 20 has at least one positioning part 201 and multiple conductive part 200, and this positioning part 201 and multiple conductive part 200 are on same plane benchmark (as horizontal line X), the height H of this conductive part 200 is greater than the height h of this positioning part 201, such as, the height H of this conductive part 200 is 300 μm, and the height h of this positioning part 201 is 130 μm, and the height H of this conductive part 200 is no more than 300 μm.
Again, this opening 202 is positioned at this positioning part 201 around, and this conduit 203 is as Cutting Road.
In addition, remove the first side 20a part of this base material 20 ' to form linking part 204, and form through part as location hole 205 in this base material 20 ', be beneficial to follow-up storing luminescence component.
As shown in Figure 2 C, luminescence component 21 is arranged on the positioning part 201 of this bearing part 20.
In the present embodiment, this luminescence component 21 is light-emitting diode, it has non-luminescent side 21b, relatively an emission side 21a of this non-luminescent side 21b and the side 21c of this non-luminescent side 21b and this emission side 21a adjacent that one is bonded to this positioning part 201, this emission side 21a has multiple electrode 210, and this non-luminescent side 21b can be used as the heat radiation side of this luminescence component 21.
In addition, the height and position of the height and position of the conductive part 200 of this bearing part 20 and the emission side 21a of this luminescence component 21 is contour.
Again, the arranged on left and right sides face 21c that those conductive parts 200 are positioned at this luminescence component 21 is peripheral, and as shown in Fig. 2 B ', but the position of those conductive parts 200 also can be designed on demand, is not limited to above-mentioned.
As shown in Figure 2 D, form cladding 22 on this bearing part 20, make this cladding 22 this luminescence component 21 coated with this positioning part 201 and the direct side 21c covering this luminescence component 21, and this cladding 22 is between the side 21c and those conductive parts 200 of this luminescence component 21.This cladding 22 has relative first surface 22a and second surface 22b, and the upper surface 200a of the emission side 21a of this luminescence component 21 and this conductive part 200 exposes to the first surface 22a of this cladding 22.
In the present embodiment, this cladding 22 is silica gel, such as, be white glue, to make this luminescence component 21 only by its emission side 21a bright dipping; Also or this cladding 22 can be such as transparent silica gel, to make this luminescence component 21 by its emission side 21a and side 21c bright dipping, and this cladding 22 is also formed at (and in this conduit 203) in this opening 202.
In addition, the upper surface 200a of this conductive part 200 and emission side 21a of this luminescence component 21 flushes with the first surface 22a of this cladding 22.
Again, as shown in Fig. 2 D ', can be sticked a fractal film 30 on mould 3 inner surface, this fractal film 30 is covered to be connected on the upper surface 200a of this emission side 21a and this conductive part 200, with in formation this cladding 22 after removing this mould 3 and fractal film 30 thereof, can guarantee that the emission side 21a of this luminescence component 21 and upper surface 200a of this conductive part 200 exposes to the first surface 22a of this cladding 22.
As shown in Figure 2 E, formed if the conductive component 23 of conducting resinl or metal lining circuit is on the first surface 22a of this cladding 22, make the electrode 210 of this this luminescence component 21 of conductive component 23 electrically connect and the upper surface 200a of those conductive parts 200.
In the present embodiment, this conductive component 23 is the conducting resinl as elargol or copper cream, and utilizes coating method former.Because this cladding 22 has covered the side 21c (its this non-luminescent side 21b and emission side 21a adjacent) of this luminescence component 21, so when using conducting resinl as this conductive component 23, conducting resinl cannot overflow to the side 21c of this luminescence component 21, the electrode 210 of this luminescence component 21 can not be electrically conducted with the electrode (not shown) of side 21c, thus can avoid being short-circuited.
In addition, also can select routing operation, namely this conductive component 23 ' is wire, as shown in Fig. 2 E '.
As shown in Figure 2 F, form one and there is the fluorescence coating 24 of multiple fluorescent grain 240 on the first surface 22a of this cladding 22, to cover the emission side 21a of this luminescence component 21, the upper surface 200a of this conductive part 200 and this conductive component 23.
In the present embodiment, because using this conducting resinl as linking the conductive component 23 of this luminescence component 21 with those conductive parts 200, so the radian without the need to considering existing wire, and can this fluorescence coating 24 of thinning on demand, to reduce integrally-built height.
As shown in Figure 2 G; the protective layer (figure slightly) of formation one for the protection of this fluorescence coating 24 or the photic zone 25 just like lens are on this fluorescence coating 24; cutting operation is carried out again along this conduit 203 (as Suo Shi Fig. 2 B '); with obtained multiple illuminated encapsulating structure 2; and this conductive part 200 and linking part 204 are embedded in the side of this cladding 22, with the side making this conductive part 200 and linking part 204 expose to this cladding 22.
In addition, if the processing procedure shown in hookup 2E ', the encapsulating structure 2 ' as shown in Fig. 2 G ' will be obtained.
In addition, as Fig. 2 G " shown in encapsulating structure 2 ", those fluorescent grains 240 can be concentrated and be positioned at this fluorescence coating 24 " side.
Refer to the generalized section that Fig. 3 A to Fig. 3 C is another embodiment of method for making of encapsulating structure of the present invention.
As shown in Figure 3A, first utilized by a metal base processing procedures such as etching and half-etching to form a bearing part.This bearing part has multiple conductive part 300 and is formed at this conductive part one end and the positioning part 301 extended to side, and as shown in the figure, at the positioning part 301 that each self-forming in one end of two conductive parts 300 extends mutually, and this positioning part 301 mutually extended does not contact.
As shown in Figure 3 B, one luminescence component 31 is connect and is placed in this and is placed in portion 301, this luminescence component 31 is light-emitting diode, it has non-luminescent side 31b, relatively an emission side 31a of this non-luminescent side 31b and the side 31c of this non-luminescent side 31b and this emission side 31a adjacent that one is bonded to this positioning part 301, this non-luminescent side 31b has multiple electrode 310, connects to make this luminescence component 31 and put to cover brilliant upside down and be electrically connected to this positioning part 301.
Then forming the cladding 32 of coated this luminescence component side 31c, such as, is silica gel or white glue, and makes the emission side 31a of this luminescence component 31 and conductive part 300 expose outside this cladding 32.
As shown in Figure 3 C, fluorescence coating 34 can be formed on the emission side 31a of this luminescence component 31 afterwards, or form protective layer or photic zone 35 further again.
Refer to the generalized section that Fig. 4 A to Fig. 4 C is another embodiment of method for making of encapsulating structure of the present invention.
As shown in Figure 4 A, the bearing part and a luminescence component 41 with multiple conductive part 400 are connect be placed on a carrier 46.This carrier 46 is such as release film.
This luminescence component 41 is light-emitting diode, it has non-luminescent side 41b, relatively an emission side 41a of this non-luminescent side 41b and the side 41c of this non-luminescent side 41b and this emission side 41a adjacent that one is bonded to this carrier 46, and this non-luminescent side 41b has multiple electrode 410.
As shown in Figure 4 B, then forming the cladding 42 of coated this luminescence component side 41c, such as, is silica gel or white glue, and makes the emission side 41a of this electronic building brick 41 and conductive part 400 expose outside this cladding 42.
Fluorescence coating 44 can be formed on the emission side 41a of this electronic building brick 41 afterwards, or form protective layer or photic zone 45 further again.
As shown in Figure 4 C, remove this carrier 46, and be electrically connected this luminescence component 41 and conductive part 400.
Separately refer to Fig. 4 C ', it is the generalized section of another embodiment of encapsulating structure of the present invention.The encapsulating structure of the present embodiment is roughly the same with aforementioned, Main Differences is to be formed with a curved surface or inclined-plane 400a at conductive part 400 ' corresponding to the side of luminescence component 41, and between this conductive part 400 ' and luminescence component 41, form a transparent cladding 42, for the light source of Refl-Luminous assembly 41 side.
Refer to Fig. 5 A and Fig. 5 B, it is section and the upper schematic diagram of another embodiment of encapsulating structure of the present invention.The encapsulating structure of the present embodiment is roughly the same with aforementioned, and Main Differences is to be utilized by a metal base etch process to form a bearing part.This bearing part has multiple opening 500a for accommodating luminescence component 51, and is provided with conductive part 500 in this opening 500a both sides, is electrically connected to this conductive part 500 for luminescence component 51.Separately between those openings 500a, be formed with groove 500b, for follow-up between this luminescence component 51 and conductive part 500, form cladding 52 time, the material of this cladding 52 can be injected by this groove 500b and around this luminescence component 51 coated.
Refer to Fig. 6 A to Fig. 6 D, it is the generalized section of another embodiment of method for making of encapsulating structure of the present invention.The method for making of the encapsulating structure of the present embodiment is roughly the same with aforementioned, and Main Differences is luminescence component to be coated with a release film.
As shown in Figure 6A, the substrate 611 including multiple luminescence component 61 by connects and is placed on the release film 671 of whole piece.
Corresponding respectively this luminescence component 61 surrounding cuts the release film 671 of this substrate 611 and full wafer, to form the luminescence component 61 that multiple surface is pasted with release film 67 afterwards.This luminescence component 61 has relative emission side 61a and non-luminescent side 61b, and this emission side has multiple electrode 610, and this release film 67 is attached on this emission side 61a.
As shown in Figure 6B, the luminescence component 61 this surface being pasted with release film 67 and the bearing part with multiple conductive part 600 connect and are placed on a carrier 66.This luminescence component 61 connects with its non-luminescent side 61b and is placed on this carrier 66.Then between this luminescence component 61 and conductive part 600, cladding 62 is formed.Emission side 61a due to this luminescence component 61 being pasted with release film 67, therefore can avoiding polluting this emission side 61a when forming this cladding 62.
As shown in Figure 6 C, remove the release film 67 on the emission side 61a of this luminescence component 61, and be electrically connected electrode 610 and this conductive part 600 of this luminescence component 61.The present embodiment is electrically connected this luminescence component 61 and this conductive part 600 with applying conductive material means, certainly can also carry out by alternate manner, such as routing.In addition in the present embodiment, the height of this conductive part 600 is about identical with this cladding 62, and the height of this luminescence component 61 is then less than this cladding 62 height and forms one section of difference.
As shown in Figure 6 D, fluorescence coating 64 can be formed on the emission side 61a of this luminescence component 61 afterwards, or form protective layer or photic zone 65 further again, and remove this carrier 66.
Refer to Fig. 7 A to Fig. 7 D, it is the generalized section of another embodiment of method for making of encapsulating structure of the present invention.The method for making of the encapsulating structure of the present embodiment is roughly the same with aforementioned, and Main Differences is luminescence component to be coated with a release film and is electrically connected to bearing part to cover brilliant upside down.
As shown in Figure 7 A, the substrate 711 including multiple luminescence component 71 by connects and is placed on the release film 771 of whole piece.
Corresponding respectively this luminescence component 71 surrounding cuts the release film 771 of this substrate 711 and full wafer, to form the luminescence component 71 that multiple surface is pasted with release film 77 afterwards.This luminescence component 71 has relative emission side 71a and non-luminescent side 71b, and this non-luminescent side has multiple electrode 710, and this release film 77 is attached on this emission side 71a.
As shown in Figure 7 B, the luminescence component 71 this surface being pasted with release film 77 and the bearing part with multiple conductive part 700 connect and are placed on a carrier 76.This luminescence component 71 connects with its non-luminescent side 71b and is placed on this carrier 76.Then between this luminescence component 71 and conductive part 700, cladding 72 is formed.Emission side 71a due to this luminescence component 71 being pasted with release film 77, therefore can avoiding polluting this emission side 71a when forming this cladding 72.
As seen in figure 7 c, remove the release film 77 on the emission side 71a of this luminescence component 71, then on the emission side 71a of this luminescence component 71, form fluorescence coating 74, or form protective layer or photic zone 75 further again.
As illustrated in fig. 7d, electrode 710 and this conductive part 700 of this luminescence component 71 is electrically connected.
Refer to Fig. 8 A and Fig. 8 B, it is section and the upper schematic diagram of another embodiment of encapsulating structure of the present invention.The encapsulating structure of the present embodiment is roughly the same with aforementioned, Main Differences is to be utilized by a metal base processing procedures such as etching and half-etching to form a bearing part 80, this bearing part 80 has a positioning part 801 and multiple conductive part 800 being located at these positioning part 801 both sides, wherein the conductive part of this positioning part 801 and side electrically conduct and opposite side conductive part between be filled with insulating cement 802, to avoid both sides conductive part electrical short.Separately in time etching this metal base, between the conductive part 800 of those longitudinal arrangements, be formed with groove 803.
Connect on this positioning part 801 and be equipped with a luminescence component 81, and make this luminescence component 81 be electrically connected to the conductive part 800 of two sides through wire 83.And be formed with fluorescence coating 84 in this luminescence component surface, and on this fluorescence coating, be formed with the photic zone 85 of this fluorescence coating 84 coated and wire 83, this photic zone 85 is such as transparent silica gel, and can effectively make this photic zone 85 effectively be bonded on this bearing part by the groove 803 previously formed.
Refer to Fig. 9, it is the generalized section of another embodiment of encapsulating structure of the present invention.The encapsulating structure of the present embodiment is roughly the same with aforementioned, Main Differences is to provide a bearing part 900, this bearing part has multiple conductive part 900 and is formed at this conductive part one end and the positioning part 901 extended to the inside, as shown in the figure, at the positioning part 901 that each self-forming in one end of two conductive parts 900 extends mutually, and this positioning part 901 mutually extended does not contact, connect for a luminescence component 91 and put to cover brilliant upside down and be electrically connected to this positioning part 901.Be formed with a fluorescence coating 94 in this luminescence component 91 surface, separately can be formed with the photic zone 95 of this fluorescence coating 94 coated.
In addition, in aforementioned each encapsulating structure, be provided with Zener diode (Zenerdiode), to produce burning voltage function; The side alternative that conductive part simultaneously in aforementioned each encapsulating structure corresponds to luminescence component forms a curved surface or inclined-plane, and collocation the luminescence component of bright dipping from the side can form three-dimensional LED encapsulating structure; And the alternative conductive part being electrically connected to bearing part with rectilinear or crystal covering type of luminescence component in aforementioned each encapsulating structure.
Above-described embodiment only for illustrative principle of the present invention and effect thereof, but not for limiting the present invention.Any those skilled in the art all without prejudice under spirit of the present invention and category, can modify to above-described embodiment.Therefore the scope of the present invention, should listed by claims.
Claims (47)
1. an encapsulating structure, is characterized by, and comprising:
One luminescence component, it has the side of relative non-luminescent side and emission side and this non-luminescent side adjacent and this emission side;
Cladding, it covers the side of this luminescence component, and makes the emission side of luminescence component expose to this cladding; And
Multiple conductive part, it is bonded in this cladding, makes the space between the side of this luminescence component and this conductive part be this cladding institute filling.
2. encapsulating structure as claimed in claim 1, it is characterized by, this encapsulating structure also comprises the bearing part that has positioning part and those conductive parts, be located on this positioning part for this luminescence component with this non-luminescent side, and this cladding is formed on this positioning part, the height of those conductive parts is greater than the height of this positioning part.
3. encapsulating structure as claimed in claim 2, is characterized by, and this bearing part also has and runs through opening, is also formed in this opening for this cladding.
4. encapsulating structure as claimed in claim 3, it is characterized by, this opening is formed at around this positioning part.
5. encapsulating structure as claimed in claim 1, it is characterized by, the emission side of this conductive part and this luminescence component is contour.
6. encapsulating structure as claimed in claim 1, is characterized by, the emission side of this luminescence component and this cladding contour.
7. encapsulating structure as claimed in claim 1, it is characterized by, the emission side height of this luminescence component and this cladding etc. are more or less than this cladding height.
8. encapsulating structure as claimed in claim 1, it is characterized by, this encapsulating structure also includes a conductive component, for being electrically connected this luminescence component and those conductive parts.
9. encapsulating structure as claimed in claim 8, it is characterized by, this conductive component is conducting resinl, wire or metallic circuit.
10. encapsulating structure as claimed in claim 1, it is characterized by, this encapsulating structure also includes fluorescence coating, and it is formed in the emission side of this luminescence component.
11. encapsulating structures as claimed in claim 10, is characterized by, and this encapsulating structure also comprises and is formed at protective layer on this fluorescence coating or photic zone.
12. encapsulating structures as claimed in claim 1, is characterized by, and the side that this conductive part corresponds to luminescence component is curved surface or inclined-plane.
13. encapsulating structures as claimed in claim 1, it is characterized by, this luminescence component has multiple electrode, and this conductive part has relative first surface and second surface, makes the electrode of this luminescence component be electrically connected to first surface or the second surface of this conductive part.
14. encapsulating structures as claimed in claim 1, it is characterized by, encapsulating structure also comprises the bearing part that has positioning part and those conductive parts, be located on this positioning part for this luminescence component with this non-luminescent side, wherein this positioning part is connected with this conductive part of part, and and this conductive part interval one insulating cement of remainder.
15. encapsulating structures as claimed in claim 1, it is characterized by, the height of this conductive part is no more than 300 μm.
The method for making of 16. 1 kinds of encapsulating structures, is characterized by, and this method for making comprises:
There is provided multiple conductive part and at least one luminescence component, and this luminescence component has the side of relative non-luminescent and emission side and this non-luminescent side adjacent and this emission side; And
With cladding this luminescence component coated and those conductive parts, and this cladding covers the side of this luminescence component, make the space between the side of this luminescence component and this conductive part be this cladding institute filling, and make the emission side of luminescence component and those conductive parts expose to this cladding.
The method for making of 17. encapsulating structures as claimed in claim 16, is characterized by, and this method for making also comprises at least one conductive component of formation to be electrically connected this luminescence component and those conductive parts.
The method for making of 18. encapsulating structures as claimed in claim 16, it is characterized by, this method for making also comprises provides at least one bearing part with positioning part and those conductive parts, this luminescence component is made to be arranged on this positioning part, and being formed on this positioning part for this cladding, the height of those conductive parts is greater than the height of this positioning part.
The method for making of 19. encapsulating structures as claimed in claim 18, it is characterized by, the processing procedure of this bearing part comprises:
One is provided to have the first relative side and the base material of the second side; And
Remove the part material of the first side of this base material to form this positioning part, and the first side of this base material do not remove part as this conductive part.
The method for making of 20. encapsulating structures as claimed in claim 19, is characterized by, and the processing procedure of this bearing part also comprises and is through to this second side by the first side of this base material, to form the opening being communicated with this first side and the second side.
The method for making of 21. encapsulating structures as claimed in claim 20, it is characterized by, this cladding is also formed in this opening.
The method for making of 22. encapsulating structures as claimed in claim 20, it is characterized by, this opening is formed at around this positioning part.
The method for making of 23. encapsulating structures as claimed in claim 16, is characterized by, and this positioning part is connected with this conductive part of part, and and this conductive part interval one insulating cement of remainder.
The method for making of 24. encapsulating structures as claimed in claim 16, it is characterized by, the emission side of this conductive part and this luminescence component is contour.
The method for making of 25. encapsulating structures as claimed in claim 16, it is characterized by, the emission side height of this luminescence component and this cladding etc. are more or less than this cladding height.
The method for making of 26. encapsulating structures as claimed in claim 16, it is characterized by, this conductive component is conducting resinl, wire or metallic circuit.
The method for making of 27. encapsulating structures as claimed in claim 16, is characterized by, and this method for making also comprises formation fluorescence coating in the emission side of this luminescence component.
The method for making of 28. encapsulating structures as claimed in claim 27, is characterized by, and this method for making also comprises and forms protective layer or photic zone on this fluorescence coating.
The method for making of 29. encapsulating structures as claimed in claim 16, is characterized by, and the side that this conductive part corresponds to luminescence component is curved surface or inclined-plane.
The method for making of 30. encapsulating structures as claimed in claim 16, it is characterized by, this luminescence component has multiple electrode, and this conductive part has relative first surface and second surface, makes the electrode of this luminescence component be electrically connected to first surface or the second surface of this conductive part.
The method for making of 31. encapsulating structures as claimed in claim 16, is characterized by, and this method for making also comprises the bearing part providing to have those conductive parts, and this bearing part is formed with multiple opening and is arranged in those openings to make this luminescence component multiple.
The method for making of 32. encapsulating structures as claimed in claim 31, is characterized by, be formed with the groove of connection between those openings.
The method for making of 33. encapsulating structures as claimed in claim 31, it is characterized by, those opening both sides are respectively provided with this conductive part multiple, and are formed with groove between adjacent two conductive parts.
The method for making of 34. encapsulating structures as claimed in claim 16, it is characterized by, those conductive parts and luminescence component are placed on a carrier.
The method for making of 35. encapsulating structures as claimed in claim 16, it is characterized by, the emission side of this luminescence component is provided with a release film, and this release film after moving after this cladding of formation.
The method for making of 36. encapsulating structures as claimed in claim 16, it is characterized by, the height of this conductive part is no more than 300 μm.
37. 1 kinds of bearing parts, is characterized by, comprising:
At least one positioning part, puts luminescence component for connecing; And
Multiple conductive part, the height of this conductive part is the height being greater than this positioning part, and the height of this conductive part is no more than 300 μm.
38. bearing parts as claimed in claim 37, it is characterized by, this bearing part also includes the opening run through, and it is formed at around this positioning part.
39. bearing parts as claimed in claim 37, is characterized by, and this positioning part is connected with this conductive part of part, and and this conductive part interval one insulating cement of remainder.
40. bearing parts as claimed in claim 37, is characterized by, and the side of this conductive part is curved surface or inclined-plane.
41. bearing parts as claimed in claim 37, it is characterized by, this bearing part is formed with the opening that multiple confession arranges luminescence component.
42. bearing parts as claimed in claim 41, is characterized by, be formed with the groove of connection between those openings.
43. bearing parts as claimed in claim 41, it is characterized by, those opening both sides are respectively provided with this conductive part multiple, and are formed with groove between adjacent two conductive parts.
44. 1 kinds of bearing parts, is characterized by, and this bearing part comprises:
Multiple opening, for arranging luminescence component; And
Multiple conductive part, it is located at this opening both sides, and the height of this conductive part is no more than 300 μm.
45. bearing parts as claimed in claim 44, is characterized by, and the side of this conductive part is curved surface or inclined-plane.
46. bearing parts as claimed in claim 44, is characterized by, be formed with the groove of connection between those openings.
47. bearing parts as claimed in claim 44, is characterized by, and are formed with groove between these adjacent two conductive parts.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| TW103123756 | 2014-07-10 | ||
| TW103123756 | 2014-07-10 | ||
| TW103139873 | 2014-11-18 | ||
| TW103139873A TW201603327A (en) | 2014-07-10 | 2014-11-18 | Package structure, method of manufacture, and a carrier member |
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| CN105280780A true CN105280780A (en) | 2016-01-27 |
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| CN201410789533.2A Pending CN105280780A (en) | 2014-07-10 | 2014-12-18 | Package structure, method for fabricating the same and carrier thereof |
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| CN (1) | CN105280780A (en) |
Cited By (1)
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