CN105280556A - Integration method of LED display module and LED display module - Google Patents
Integration method of LED display module and LED display module Download PDFInfo
- Publication number
- CN105280556A CN105280556A CN201410350472.XA CN201410350472A CN105280556A CN 105280556 A CN105280556 A CN 105280556A CN 201410350472 A CN201410350472 A CN 201410350472A CN 105280556 A CN105280556 A CN 105280556A
- Authority
- CN
- China
- Prior art keywords
- led wafer
- led
- wafer group
- ito
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to an integration method of an LED display module and the LED display module. The method comprises steps of: installing LED wafer groups in matrix grooves at equal intervals on a glass template in an inverted manner; filling first inorganic insulation layers between the LED wafer groups; successively preparing a second insulated layer, an ITO top conductive layer, a third insulated layer, an ITO bottom conductive layer, a fourth insulated layer, an ITO driving control conductive layer, and a fifth insulated layer on the electrode side of the LED wafer groups in a patterned manner, and making a first terminal connected with the first electrode of the LED wafer group via the ITO top conductive layer and a second terminal connected with the first electrode of the LED wafer group via the ITO bottom conductive layer in the patterned area of the fifth insulated layer; soldering the two terminals and a PCB in order to form the LED display module.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to the integrated approach that a kind of LED shows module.
Background technology
In traditional semiconductor display production development to today, supporting or to intersect the resource of industry greatly abundant and perfect.
But, because be limited by the traditional structure of LED light source, be limited by the material structure involved by module of rear integrated processing simultaneously, the driving capacity of for example traditional constant-current source encapsulation and structure, the thermally labile sex chromosome mosaicism of the integrated finished product that the material that traditional FR4 circuit board is loose is brought, evenness strength problem, and be spliced into injection moulding face shield required for large-screen and the reliability of moulding shell etc. for installing, all seriously limits the breakthrough of LED Display Technique in high density field and application.
Traditional circuit-board is carried out the bonding technique of LED, processing cannot be realized when the resolution of semiconductor display is brought up to a certain degree.Therefore traditional circuit-board to meet small size, high-precision requirement completely.Meanwhile, between multiple LED wafer of a LED circuit base plate carrying, the consistency of performance cannot be protected, and may impact the performance of final products.
Summary of the invention
In view of this, the invention provides a kind of LED and show the integrated approach of module and LED shows module, described integrated approach technique is simple, can consistency between effective guarantee LED wafer, thus reaches good display effect.
First aspect, the invention provides the integrated approach that a kind of LED shows module, comprising:
Glass template makes multiple equally spaced matrix groove;
Upside-down mounting one group of LED wafer group in each described matrix groove;
First surface physical vapor deposition first inorganic insulation layer of LED wafer group side is housed in described glass template, fill one group of LED wafer group in order to utilize described first inorganic insulation layer and another organizes gap between LED wafer group, and the first surface after physical vapor deposition is ground;
Graphically prepare the second insulating barrier on the first surface, and in patterned area, expose the first electrode and second electrode of LED wafer group;
Graphically prepare tin indium oxide ITO top layer conductive layer on the first surface; Wherein, described ITO top layer conductive layer is connected with described first electrode;
Graphically prepare the 3rd insulating barrier on the first surface, and in patterned area, expose the second electrode of described LED wafer group;
Graphically prepare ITO bottom conductive layer on the first surface; Wherein, described ITO bottom conductive layer is connected with described second electrode;
Graphically prepare the 4th insulating barrier on the first surface, according to design ITO top layer conductive layer described in exposed portion and described ITO bottom conductive layer in patterned area;
Graphically prepare ITO drived control conductive layer on the first surface; Wherein, described ITO drived control conductive layer comprises multiple ITO wire, is connected respectively according to design with described ITO top layer conductive layer or described ITO bottom conductive layer;
Graphical deposit pentasyllabic quatrain edge layer;
The first terminal and the second terminal is made in the patterned area of described pentasyllabic quatrain edge layer; Wherein, described the first terminal is for connecting the first electrode of described LED wafer group; Described second terminal is for connecting the second electrode of described LED wafer group;
By described the first terminal and the second terminal, described upside-down mounting there is the glass module of LED wafer group to weld with outside pcb board, form described LED and show module.
Preferably, the length and width size of multiple described matrix groove is equal and groove depth is equal.
Preferred further, the top surface edge place of described one group of LED wafer group has depth localization groove, and the groove depth of described depth localization groove and the groove depth of described matrix groove match.
Preferably, in each described matrix groove before upside-down mounting one group of LED wafer group, described method also comprises:
In the matrix groove of described glass template, insert adhesive, enter LED wafer group in described matrix groove in order to bond upside-down mounting.
Further preferred, described in each described matrix groove upside-down mounting one group of LED wafer group be specially:
By multiple LED wafer groups of pasting on blue film with automatic needle beating type paster technique, implant in multiple described matrix groove successively; Wherein, the top exiting surface of described LED wafer group combines with described glass template with by described adhesive;
After described matrix groove is all implanted by described LED wafer group, compressing tablet is carried out to described LED wafer group, make the bottom surface of the described LED wafer group of many groups be in same level.
Preferably, described upside-down mounting to be had before the glass module of LED wafer group welds with outside pcb board described, described method also comprises:
By described the first terminal and the second terminal, the glass module of LED wafer group is had to carry out electrical testing to described upside-down mounting.
Preferably, described upside-down mounting to be had after the glass module of LED wafer group welds with outside pcb board described, described method also comprises:
Module is shown to described LED and carries out electrical testing.
Preferably, to show after module carries out electrical testing to described LED described, described method also comprises:
At described pcb board side attachment cooling stand, dispel the heat in order to show module to described LED.
Second aspect, embodiments provides a kind of LED and shows module, and described LED shows module and adopts the method as described in above-mentioned first aspect to be prepared.
The LED that the embodiment of the present invention provides shows the integrated approach of module, by the upside-down mounting of LED wafer group being entered in the matrix groove of the first-class spacing of glass template; The first inorganic insulation layer is filled between LED wafer group; Graphically prepare the second insulating barrier, ITO top layer conductive layer, the 3rd insulating barrier, ITO bottom conductive layer, the 4th insulating barrier, ITO drived control conductive layer and pentasyllabic quatrain edge layer in LED wafer group electrode side successively, and in the patterned area of pentasyllabic quatrain edge layer, make the first terminal be connected with the first electrode of LED wafer group by ITO top layer conductive layer; By the second terminal that ITO bottom conductive layer is connected with the second electrode of LED wafer group; Undertaken welding by two terminals and pcb board and form LED and show module.LED of the present invention shows the integrated approach of module, and technique is simple, can consistency between effective guarantee LED wafer, thus reaches good display effect.
Accompanying drawing explanation
The integrated approach flow chart of a kind of LED display module that Fig. 1 provides for the embodiment of the present invention;
The LED that Fig. 2 a provides for the embodiment of the present invention shows one of integrating process schematic diagram of module;
The integrating process schematic diagram two of the LED display module that Fig. 2 b provides for the embodiment of the present invention;
The integrating process schematic diagram three of the LED display module that Fig. 3 provides for the embodiment of the present invention;
The integrating process schematic diagram four of the LED display module that Fig. 4 provides for the embodiment of the present invention;
The integrating process schematic diagram five of the LED display module that Fig. 5 provides for the embodiment of the present invention;
The integrating process schematic diagram six of the LED display module that Fig. 6 provides for the embodiment of the present invention;
The integrating process schematic diagram seven of the LED display module that Fig. 7 provides for the embodiment of the present invention;
The integrating process schematic diagram eight of the LED display module that Fig. 8 provides for the embodiment of the present invention;
The integrating process schematic diagram nine of the LED display module that Fig. 9 provides for the embodiment of the present invention;
The integrating process schematic diagram ten of the LED display module that Figure 10 provides for the embodiment of the present invention;
The LED that Figure 11 provides for the embodiment of the present invention shows 11 of the integrating process schematic diagram of module;
The LED that Figure 12 provides for the embodiment of the present invention shows 12 of the integrating process schematic diagram of module;
The LED that Figure 13 provides for the embodiment of the present invention shows 13 of the integrating process schematic diagram of module;
The LED that Figure 14 provides for the embodiment of the present invention shows 14 of the integrating process schematic diagram of module;
The schematic diagram of the LED display module that Figure 15 provides for the embodiment of the present invention.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Embodiment
LED of the present invention shows the integrated approach of module, is mainly used in LED display, Ultra fine pitch LED display, super-high density LED display, the positive luminous TV of LED, the positive luminous monitor of LED, LED video wall, LED indicates, the display floater manufacture in the fields such as LED special lighting.
The integrated approach flow chart of the LED display module that Fig. 1 provides for the embodiment of the present invention.Fig. 2-Fig. 8 is that the LED of the embodiment of the present invention shows the integrating process schematic diagram of module, below with Fig. 1 and composition graphs 2-Fig. 8 integrated approach of the present invention is described.
The integrated approach that the LED that the embodiment of the present invention provides shows module comprises the steps:
Step 101, glass template makes multiple equally spaced matrix groove;
Concrete, first process glass template, the one side of glass template makes multiple, the equal and matrix groove that groove depth is equal of length and width size, specifically as shown in Fig. 2 a-Fig. 2 b, wherein Fig. 2 a is sectional view, and Fig. 2 b is vertical view.It is spaced set between groove and groove.
Step 102, inserts adhesive in the matrix groove of described glass template;
Concrete, as shown in Figure 3.
The effect of inserting adhesive enters LED wafer group in matrix groove to bond follow-up upside-down mounting.Adhesive can adopt as transparent epoxy resin or silica gel etc.
Step 103, upside-down mounting one group of LED wafer group in each described matrix groove;
Concrete, before flip LED wafer set, LED wafer group has been produced, and exiting surface is upwards pasted and to be waited on blue film and be loaded in matrix groove.
Can, by multiple LED wafer groups of pasting on blue film with automatic needle beating type paster technique, implant in multiple matrix groove successively; Wherein, the top exiting surface of LED wafer group combines with described glass template with by described adhesive;
After matrix groove is all implanted by described LED wafer group, compressing tablet is carried out to described LED wafer group, make the bottom surface of many group LED wafer groups be in same level.After upside-down mounting completes, can be as shown in Figure 4.
In a concrete example, loading one group of LED wafer group in each matrix groove can be made up of red, green, blue three look wafer, also can be made up of the wafer of other colors.Certainly, in other examples, also can load a monochromatic LED wafer in each matrix groove, or according to application needs, in some matrix grooves, load a kind of LED wafer of monochrome, LED wafer loading other monochromes etc. in other matrix grooves.
LED wafer group is loaded for the ease of automation, can as shown in Figure 5, make depth localization groove 51 at the top surface edge place of each group LED wafer group, the groove depth of described depth localization groove and the groove depth of described matrix groove match.
In addition, positioning mark 61 can also be made as shown in Figure 6 on a marginal position of the exiting surface of LED wafer group, in order to realize can the correct assembly direction of automation identification LED wafer group when assembling LED wafer group in matrix groove.
Step 104, first surface physical vapor deposition first inorganic insulation layer of LED wafer group side is housed in described glass template, fill one group of LED wafer group in order to utilize described first inorganic insulation layer and another organizes gap between LED wafer group, and the first surface after physical vapor deposition is ground;
Concrete, in glass template, LED wafer group side is housed, prepares one deck SiO with the method for physical vapor deposition
2, subsequently to SiO
2carry out grinding technics, expose the electrode of LED wafer group.As shown in Figure 7.Gap now between LED wafer group is by SiO
2fill.
Step 105, graphically prepares the second insulating barrier on the first surface, and in patterned area, expose the first electrode and second electrode of LED wafer group;
Concrete, the process of graphical preparation can be that first deposit grows the second insulating barrier, more graphically etches.Or also can be prepare masking layer, recycling masking layer carries out the processes such as selective growth.Preparing the second complete insulating barrier 80 can as shown in Figure 8, and shown in figure, 81 is the first electrode, and 82 is the second electrode.
Step 106, graphically prepares tin indium oxide (ITO) top layer conductive layer on the first surface; Wherein, described ITO top layer conductive layer is connected with described first electrode;
Concrete, kinds of processes can be used for preparing ITO transparent conductive film, as magnetron sputtered vacuum reactive evaporation, chemical vapour deposition (CVD), sol-gel process and pulsed laser deposition etc.Wherein magnetron sputtering technique has the advantages such as deposition rate high uniformity is good, therefore can preferably adopt the method to carry out the preparation of ITO top layer conductive layer 91 as shown in Figure 9.
Step 107, graphically prepares the 3rd insulating barrier on the first surface, and in patterned area, exposes the second electrode of described LED wafer group;
Concrete, the process of graphical preparation can be first deposit growth regulation three insulating barrier 101, then carries out graphically etching exposing the second electrode 82.Or also can be prepare masking layer, recycling masking layer carries out the processes such as selective growth.
Step 108, graphically prepares ITO bottom conductive layer on the first surface; Wherein, described ITO bottom conductive layer is connected with described second electrode;
Concrete, as shown in figure 11,111 is ITO bottom conductive layer.
Step 109, graphically prepares the 4th insulating barrier, on the first surface according to design ITO top layer conductive layer described in exposed portion and described ITO bottom conductive layer in patterned area;
Concrete, as shown in figure 12, the process of graphical preparation can be first deposit growth regulation four insulating barrier 121, more graphically etches, exposed portion ITO top layer conductive layer 91 and part ITO bottom conductive layer 111.Or also can be prepare masking layer, recycling masking layer carries out the processes such as selective growth.
Step 110, graphically prepares ITO drived control conductive layer on the first surface;
Concrete, as shown in figure 13, described ITO drived control conductive layer comprises multiple ITO wire 131, is connected respectively according to design with described ITO top layer conductive layer 91 or described ITO bottom conductive layer 111; Wherein, ITO top layer conductive layer 91 is for the level connection joint of each group of LED wafer, ITO bottom conductive layer 111 connects for the vertical direction of each group of LED wafer, and multiple ITO conductions 131 of ITO drived control conductive layer are connected with ITO top layer conductive layer 91 or ITO bottom conductive layer 111 respectively.
Step 111, graphical deposit pentasyllabic quatrain edge layer;
Step 112, makes the first terminal and the second terminal in the patterned area of described pentasyllabic quatrain edge layer; The first terminal and the second terminal are drawn by ITO drived control conductive layer.In a concrete example, can be that described the first terminal is for connecting the first electrode of described LED wafer group; Described second terminal is for connecting the second electrode of described LED wafer group.External circuit can transmit drive singal by the first terminal and the second terminal to each LED wafer group.
Concrete, as shown in figure 14,141 is the first electrode, and 142 is the second electrode.
Step 113, by described the first terminal and the second terminal, has described upside-down mounting the glass module of LED wafer group to weld with outside pcb board, forms described LED and show module.
After step 113, also tackle LED and show module and carry out electrical testing, with the electric property after ensureing to assemble with PCB.
Finally, also at pcb board side attachment cooling stand, to dispel the heat in order to show module to described LED.
The LED that the embodiment of the present invention provides shows the integrated approach of module, by the upside-down mounting of LED wafer group being entered in the matrix groove of the first-class spacing of glass template; The first inorganic insulation layer is filled between LED wafer group; Graphically prepare the second insulating barrier, ITO top layer conductive layer, the 3rd insulating barrier, ITO bottom conductive layer, the 4th insulating barrier, ITO drived control conductive layer and pentasyllabic quatrain edge layer in LED wafer group electrode side successively, and in the patterned area of pentasyllabic quatrain edge layer, make the first terminal be connected with the first electrode of LED wafer group by ITO top layer conductive layer; By the second terminal that ITO bottom conductive layer is connected with the second electrode of LED wafer group; Undertaken welding by two terminals and pcb board and form LED and show module.LED of the present invention shows the integrated approach of module, and technique is simple, can consistency between effective guarantee LED wafer, thus reaches good display effect.
Accordingly, the embodiment of the present invention additionally provides a kind of LED display module utilizing said method integrated.As shown in figure 15, described LED display module comprises: glass template 1501, the LED wafer group 1502, SiO of upside-down mounting
2packed layer 1503, ITO conductive layer 1504, insulating barrier 1505, packaging solder ball 1506, adhesive 1507, ITO cascade terminal 1508, pcb board 1509 and cooling stand 1510.
Wherein ITO conductive layer 1504 is three layers, and insulating barrier 1505 is also three layers, is specially the overlapping configuration of one deck ITO conductive layer 1504, layer insulating 1505, again one deck ITO conductive layer 1504.
ITO cascade terminal 1508 comprises the first terminal described in above-described embodiment and the second terminal, does not separately illustrate in the drawings.
Pcb board 1509 can comprise and be integrated with constant current drive IC, line scanning power transistor, data-signal Processing Interface IC and power management chip etc.
The LED that the embodiment of the present invention provides shows module, has the consistency of good LED wafer, thus has good display effect.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; the protection range be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. LED shows an integrated approach for module, and it is characterized in that, described method comprises:
Glass template makes multiple equally spaced matrix groove;
Upside-down mounting one group of LED wafer group in each described matrix groove;
First surface physical vapor deposition first inorganic insulation layer of LED wafer group side is housed in described glass template, fill one group of LED wafer group in order to utilize described first inorganic insulation layer and another organizes gap between LED wafer group, and the first surface after physical vapor deposition is ground;
Graphically prepare the second insulating barrier on the first surface, and in patterned area, expose the first electrode and second electrode of LED wafer group;
Graphically prepare tin indium oxide ITO top layer conductive layer on the first surface; Wherein, described ITO top layer conductive layer is connected with described first electrode;
Graphically prepare the 3rd insulating barrier on the first surface, and in patterned area, expose the second electrode of described LED wafer group;
Graphically prepare ITO bottom conductive layer on the first surface; Wherein, described ITO bottom conductive layer is connected with described second electrode;
Graphically prepare the 4th insulating barrier on the first surface, according to design ITO top layer conductive layer described in exposed portion and described ITO bottom conductive layer in patterned area;
Graphically prepare ITO drived control conductive layer on the first surface; Wherein, described ITO drived control conductive layer comprises multiple ITO wire, is connected respectively according to design with described ITO top layer conductive layer or described ITO bottom conductive layer;
Graphical deposit pentasyllabic quatrain edge layer;
The first terminal and the second terminal is made in the patterned area of described pentasyllabic quatrain edge layer; Wherein, described the first terminal is for connecting the first electrode of described LED wafer group; Described second terminal is for connecting the second electrode of described LED wafer group;
By described the first terminal and the second terminal, described upside-down mounting there is the glass module of LED wafer group to weld with outside pcb board, form described LED and show module.
2. method according to claim 1, is characterized in that, the length and width size of multiple described matrix groove is equal and groove depth is equal.
3. method according to claim 2, is characterized in that, the top surface edge place of described one group of LED wafer group has depth localization groove, and the groove depth of described depth localization groove and the groove depth of described matrix groove match.
4. method according to claim 1, is characterised in that, in each described matrix groove before upside-down mounting one group of LED wafer group, described method also comprises:
In the matrix groove of described glass template, insert adhesive, enter LED wafer group in described matrix groove in order to bond upside-down mounting.
5. method according to claim 4, is characterized in that, described in each described matrix groove upside-down mounting one group of LED wafer group be specially:
By multiple LED wafer groups of pasting on blue film with automatic needle beating type paster technique, implant in multiple described matrix groove successively; Wherein, the top exiting surface of described LED wafer group combines with described glass template with by described adhesive;
After described matrix groove is all implanted by described LED wafer group, compressing tablet is carried out to described LED wafer group, make the bottom surface of the described LED wafer group of many groups be in same level.
6. method according to claim 1, is characterized in that, described upside-down mounting to be had before the glass module of LED wafer group welds with outside pcb board described, described method also comprises:
By described the first terminal and the second terminal, the glass module of LED wafer group is had to carry out electrical testing to described upside-down mounting.
7. method according to claim 1, is characterized in that, described upside-down mounting to be had after the glass module of LED wafer group welds with outside pcb board described, described method also comprises:
Module is shown to described LED and carries out electrical testing.
8. method according to claim 1, is characterized in that, to show after module carries out electrical testing to described LED described, described method also comprises:
At described pcb board side attachment cooling stand, dispel the heat in order to show module to described LED.
9. LED shows a module, it is characterized in that, described LED shows module and adopts as above-mentioned method according to claim 1 is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410350472.XA CN105280556B (en) | 2014-07-22 | 2014-07-22 | A kind of integrated approach of LED display modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410350472.XA CN105280556B (en) | 2014-07-22 | 2014-07-22 | A kind of integrated approach of LED display modules |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105280556A true CN105280556A (en) | 2016-01-27 |
| CN105280556B CN105280556B (en) | 2018-02-23 |
Family
ID=55149344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410350472.XA Active CN105280556B (en) | 2014-07-22 | 2014-07-22 | A kind of integrated approach of LED display modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105280556B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111818687A (en) * | 2020-07-20 | 2020-10-23 | 上海艾葛诺照明科技有限公司 | Automatic production method and system of LED lamp |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321123A (en) * | 1999-09-21 | 2001-11-07 | 日本板硝子株式会社 | Cross under metal interconnection structure of self scanning light-emitting device |
| CN101388347A (en) * | 2007-09-11 | 2009-03-18 | 环隆电气股份有限公司 | Multi-wave length illuminating diode array packaging module and packaging method thereof |
| US20120074441A1 (en) * | 2010-09-24 | 2012-03-29 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| CN103400779A (en) * | 2013-07-09 | 2013-11-20 | 程君 | Manufacturing method of semiconductor display panel |
-
2014
- 2014-07-22 CN CN201410350472.XA patent/CN105280556B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321123A (en) * | 1999-09-21 | 2001-11-07 | 日本板硝子株式会社 | Cross under metal interconnection structure of self scanning light-emitting device |
| CN101388347A (en) * | 2007-09-11 | 2009-03-18 | 环隆电气股份有限公司 | Multi-wave length illuminating diode array packaging module and packaging method thereof |
| US20120074441A1 (en) * | 2010-09-24 | 2012-03-29 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| CN103400779A (en) * | 2013-07-09 | 2013-11-20 | 程君 | Manufacturing method of semiconductor display panel |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111818687A (en) * | 2020-07-20 | 2020-10-23 | 上海艾葛诺照明科技有限公司 | Automatic production method and system of LED lamp |
| CN111818687B (en) * | 2020-07-20 | 2021-03-16 | 上海艾葛诺照明科技有限公司 | Automatic production method and system of LED lamp |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105280556B (en) | 2018-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102130235B (en) | Method and device for packaging LED chip | |
| KR20190082748A (en) | Strip light source, method of manufacturing the same, and electronic device | |
| CN104134741B (en) | The method for packing of LED display module | |
| CN205264271U (en) | Integrated luminous unit module of full -color RGB and LED display screen | |
| CN108335638B (en) | L ED display module and L ED display screen | |
| CN101877350A (en) | Integrated chip unit | |
| CN103646620B (en) | LED shows module and manufacture method thereof | |
| CN103366647B (en) | LED display unit module | |
| CN203433761U (en) | Light-emitting diode (LED) light-emitting display board | |
| WO2023123800A1 (en) | Packaging structure of optical chip and electric chip, and method for preparing same | |
| CN102064267A (en) | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit | |
| CN109742223A (en) | The encapsulating structure and packaging method of fan-out-type LED | |
| CN102760822A (en) | Light-emitting diode encapsulation structure and manufacturing method thereof | |
| CN102683546B (en) | Semiconductor package structure and manufacturing method thereof | |
| CN109755376A (en) | The encapsulating structure and packaging method of fan-out-type LED | |
| CN105528967B (en) | A kind of preparation method of composite LED glass substrate display module | |
| CN203760010U (en) | Semiconductor display unit based on lamination baseboard with separated display and control | |
| CN203433750U (en) | LED display unit module | |
| CN105280556A (en) | Integration method of LED display module and LED display module | |
| CN209804709U (en) | Fan-out type LED packaging structure and electronic display screen | |
| CN203433760U (en) | Flexible LED (light-emitting diode) display panel | |
| CN104916232A (en) | Package structure and package method for high definition LED display screen module | |
| CN110190068A (en) | The manufacturing method of display panel and display panel | |
| CN109755375A (en) | The encapsulating structure and packaging method of fan-out-type LED | |
| CN104779246A (en) | Light-emitting assembly, backlight device and methods for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160804 Address after: 214100, Jiangsu, Wuxi Province, high road, Binhu District No. 999 (software R & D building) Applicant after: Look around the advanced digital display Wuxi Co. Ltd. Address before: 100097 room B1F, unit four, building No. three, Far East Road, Haidian District, Beijing Applicant before: Yan Min Applicant before: Cheng Jun Applicant before: Zhou Mingbo |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |