CN101388347A - Multi-wave length illuminating diode array packaging module and packaging method thereof - Google Patents
Multi-wave length illuminating diode array packaging module and packaging method thereof Download PDFInfo
- Publication number
- CN101388347A CN101388347A CNA2007101487429A CN200710148742A CN101388347A CN 101388347 A CN101388347 A CN 101388347A CN A2007101487429 A CNA2007101487429 A CN A2007101487429A CN 200710148742 A CN200710148742 A CN 200710148742A CN 101388347 A CN101388347 A CN 101388347A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- weld pad
- wave length
- light emitting
- wavelength light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The invention relates to a packaging method of a multi-wavelength light-emitting diode array packaging module, which comprises the steps: firstly shaping at least one groove on a driving integrated circuit structure, then arranging a multi-wavelength light-emitting diode array group in at least one groove, solidifying several liquid conductive materials through the processes of printing, coating, adhering or steel plate printing in order to respectively form a plurality of conductive elements which are electrically connected between the driving integrated circuit structure and the multi-wavelength light-emitting diode array group, then arranging the driving integrated circuit structure on a circuit board which comprises at least one output/input pad, and finally forming a conductive structure which is electrically connected between the driving integrated circuit structure and at least one output/input pad.
Description
Technical field
The present invention relates to a kind of structure dress module and construction method thereof, and particularly relevant for a kind of multi-wave length illuminating diode array structure dress module and construction method thereof.
Background technology
The employed optics seal of conventional printer gauge outfit, with single lasing light emitter, transfer to photosensitive drums through the data that the complicated optical system of a cover is printed desire in the signal mode of light, on photosensitive drums, form electrostatic latent image, through carbon dust absorption, transcription, hot pressing, remove step such as electricity, to reach the demand of printing.Yet laser seal gauge outfit is but because its optical element is many, mechanism is complicated and light path (optical path) is longer, makes laser printer exist the problem that can't further dwindle in mechanism.Therefore, the current printer designer often uses the light source of light-emitting diode (LED) to substitute LASER Light Source, to simplify the too complicated optical facilities of tradition.
In the light-emitting diode printing technique,, then need the light-emitting diode of smaller szie, so that under identical printing head volume, can hold more light-emitting diode if will improve resolution (resolution).Yet, in traditional construction method, at first need by high-precision glutinous brilliant equipment light emitting diode matrix (LED array) and accurately parallel being placed on the printed circuit board (PCB) of drive integrated circult array (drive IC array); Then in the lead engagement step, with A4 size 600dpi is example, need be by about 5000 leads to be electrically connected between each light emitting diode matrix and each the drive integrated circult array, so that each drive integrated circult can be with each corresponding light-emitting diode of electrical driving.
Therefore, existing construction method because the bar number and the density of routing are too high, will cause the puzzlement that production efficiency is not good and the processing procedure difficulty increases, thereby cause the product yield to reduce and the manufacturing cost increase.In addition, along with the demand on the market, the user is more and more higher to the requirement of resolution, so light-emitting diode can do more and more forr a short time, and causes more difficulty of line connection process.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and defective, propose a kind of multi-wave length illuminating diode array structure dress module and construction method thereof, with shorten product sizes and reduction manufacturing cost.
For reaching above-mentioned purpose, according to wherein a kind of scheme of the present invention, provide a kind of construction method of multi-wave length illuminating diode array structure dress module, its step comprises: at first, be shaped at least one groove on a drive integrated circult structure; Then, a multi-wave length illuminating diode array group is set in this at least one groove; At last, form a plurality of conducting elements that are electrically connected between this drive integrated circult structure and this multi-wave length illuminating diode array group.
For reaching above-mentioned purpose, according to wherein a kind of scheme of the present invention, also provide a kind of multi-wave length illuminating diode array structure dress module, it comprises: a drive integrated circult structure, a multi-wave length illuminating diode array group, and a plurality of conducting elements.Wherein, the surface of this drive integrated circult structure has at least one groove, this multi-wave length illuminating diode array group is placed in this at least one groove, and described conducting element is electrically connected at respectively between this drive integrated circult structure and this multi-wave length illuminating diode array group.
Based on above-mentioned, the present invention is sticking by printing, be coated with, being stained with, the mode of steel plate printing or manufacture of semiconductor, make the electric connection between this multi-wave length illuminating diode array group and this drive integrated circult structure simultaneously, and the electric connection between per two light emitting diode matrixs, but not as conventional process, adopt one one to carry out the routing joint, therefore the present invention not only has the advantage of shorten product sizes and reduction manufacturing cost, and the present invention also has because of using manufacture of semiconductor to increase the advantage of speed of production.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet appended graphic reference and the explanation usefulness of only providing not is to be used for the present invention is limited.
Description of drawings
Fig. 1 is the flow chart of first embodiment of the construction method of multi-wave length illuminating diode array structure dress module of the present invention;
Fig. 2 is the schematic diagram of the wafer (wafer) of patterning (patterned);
Fig. 3 is the enlarged drawing of A among Fig. 2;
Fig. 4 is the profile of 4-4 among Fig. 3;
Fig. 5 A1 to Fig. 5 G is respectively the schematic flow sheet of first embodiment of the construction method of multi-wave length illuminating diode array structure of the present invention dress module;
Fig. 6 is the flow chart of second embodiment of the construction method of multi-wave length illuminating diode array structure dress module of the present invention;
Fig. 7 A to Fig. 7 E is respectively the part schematic flow sheet of second embodiment of the construction method of multi-wave length illuminating diode array structure of the present invention dress module;
Fig. 8 is the flow chart of the 3rd embodiment of the construction method of multi-wave length illuminating diode array structure dress module of the present invention;
Fig. 9 A to Fig. 9 C is respectively the part schematic flow sheet of the 3rd embodiment of the construction method of multi-wave length illuminating diode array structure of the present invention dress module;
Figure 10 is the flow chart of the 4th embodiment of the construction method of multi-wave length illuminating diode array structure dress module of the present invention;
Figure 11 A to Figure 11 E is respectively the part schematic flow sheet of the 4th embodiment of the construction method of multi-wave length illuminating diode array structure of the present invention dress module.
Symbol description among the figure
P1, P2, P3, P4 multi-wave length illuminating diode array structure dress module
1 drive integrated circult structure
10 drive integrated circult weld pads
10a power supply weld pad
11 grooves
110 bottom surfaces
2 adhesion components
21 first adhesion components
22 second adhesion components
23 the 3rd adhesion components
3 multi-wave length illuminating diode array groups
30 light-emitting diode weld pads
300 lower surfaces
31 first wavelength light emitting diode matrixs
32 second wavelength light emitting diode matrixs
33 three-wavelength light emitting diode matrixs
L1, L2, L3 LED crystal particle
40a, 40b, 40c electrically conductive liquid material
40a ', 40b ', 40c ' conducting element
The 40D conducting element
5 circuit boards
50 output/input weld pads
6 conductive structures
7 steel plates
70 predetermined patterns
D is stained with sticking equipment
The G1 first width gap
The G2 second width gap
H1, H2 print head
L a insulating barrier
The L10 patterned insulation layer
L b second insulating barrier
L20 second patterned insulation layer
The M light shield
The U ultraviolet light
The V container
The W wafer
Embodiment
See also Fig. 1 to Fig. 4, reach shown in Fig. 5 A1 to Fig. 5 G.By the flow chart of Fig. 1 as can be known, the first embodiment of the present invention provides the construction method of a kind of multi-wave length illuminating diode array structure dress module (multi-wavelength LED array package module), its step comprises: at first, please cooperate Fig. 2 to shown in Figure 4, one wafer (wafer) W of patterning (patterned) is provided, wherein this wafer W has a plurality of drive integrated circult structures (drive ICstructure) 1, and each drive integrated circult structure 1 has a plurality of drive integrated circult weld pads (drive IC pad) 10 (S100); Then, be shaped at least one groove (concave groove) 11 on each drive integrated circult structure 1 (S102).Wherein, the described drive integrated circult weld pad 10 that is positioned at the both sides of each groove 11 is distinguished trajectory alignment along a straight line, and this at least one groove 11 can be by dry-etching (dry etching), Wet-type etching (wet etching), machining (machining) or any forming mode, to be formed on the corresponding drive integrated circult structure 1.
Next, Fig. 5 A1 to Fig. 5 G all is described at each drive integrated circult structure 1.That is following described " step S104a is to step S116 " is " the step S1 that is described at each drive integrated circult structure 1 ".
At first, please cooperate shown in Fig. 5 A1, the adhesion components that is shaped (adhesive element) 2 is in lower surface (lower surface) 300 (S104a) of a multi-wave length illuminating diode array group (multi-wavelength LED array set) 3.Perhaps, please cooperate shown in Fig. 5 A2, this step S104a is replaceable to be: the adhesion components 2 that is shaped is in the bottom surface of this at least one groove 11 (base surface) 110 (S104b).Wherein, this multi-wave length illuminating diode array group 3 has three the first wavelength light emitting diode matrix (firstwavelength LED array), 31, second wavelength light emitting diode matrixs (second wavelengthLED array) 32 that have different wave length respectively, and three-wavelength light emitting diode matrix (third wavelength LEDarray) 33.
In addition, please cooperate shown in Fig. 5 A3, this adhesion components 2 also can tripartite adhesion components, and for example: this adhesion components 2 comprises second adhesion components (second adhesive element) 22, and the 3rd adhesion components (third adhesiveelement) 23 of corresponding this three-wavelength light emitting diode matrix 33 of first adhesion components (first adhesive element), 21, one corresponding this second wavelength light emitting diode matrix 32 of corresponding this first wavelength light emitting diode matrix 31.In addition, this adhesion components 2 can be elargol (silver adhesive), polymer (polymide) or any colloid with stickiness.
Then, please cooperate that (Fig. 5 B1 is a profile shown in Fig. 5 B1 and Fig. 5 B2; Fig. 5 B2 is a vertical view), this multi-wave length illuminating diode array group 3 is set in this at least one groove 11, wherein this multi-wave length illuminating diode array group 3 has three light emitting diode matrixs 31,32,33, and each light emitting diode matrix 31,32,33 has light-emitting diode weld pad (LED pad) 30 and a plurality of LED crystal particle (LED die) L1, the L2 or L3 (S106) that is electrically connected at described light-emitting diode weld pad 30 respectively of a plurality of corresponding described drive integrated circult weld pads 10.
In other words, by this multi-wave length illuminating diode array group 3 being set, so that this adhesion components 2 is arranged between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1 in this at least one groove 11.Moreover this first, second, third wavelength light emitting diode matrix 31,32,33 is arranged side by side each other, and this second wavelength light emitting diode matrix 32 is arranged between this first wavelength light emitting diode matrix 31 and this three-wavelength light emitting diode matrix 33.In addition, the both sides of this drive integrated circult structure 1 have a plurality of drive integrated circult weld pads 10, the both sides of this first wavelength light emitting diode matrix 31 have a plurality of light-emitting diode weld pads 30 and a plurality of wherein LED crystal particle L1 of the light-emitting diode weld pad 30 of a side that is electrically connected at respectively, the both sides of this second wavelength light emitting diode matrix 32 have a plurality of light-emitting diode weld pads 30 and a plurality of LED crystal particle L2 that is electrically connected at described corresponding light-emitting diode weld pad 30 respectively, and the both sides of this three-wavelength light emitting diode matrix 33 have a plurality of light-emitting diode weld pads 30 and a plurality of wherein LED crystal particle L3 of the light-emitting diode weld pad 30 of a side that is electrically connected at respectively.
Moreover, has one first width gap (first widthgap) G1 between per two light emitting diode matrixs, that is have one first width clearance G 1 between this first wavelength light emitting diode matrix 31 and this second wavelength light emitting diode matrix 32, and there is another first width clearance G 1 between this second wavelength light emitting diode matrix 32 and this three-wavelength light emitting diode matrix 33.In addition, form two second width gaps (second width gap) G2 between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1.Wherein, the width of the width of these two first width clearance G 1 and these two second width clearance G 2 is for example approximately between 5～10 microns (μ m), and the vertical height (longitudinal height) between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1 for example is about about 10 microns (μ m).
Next, please cooperate shown in Fig. 5 C, form an insulating barrier (insulative layer) La on this drive integrated circult structure 1 and this multi-wave length illuminating diode array group 3 (S108).This insulating barrier La can be a positive photoresist layer (positive photo resist).That is this positive photoresist layer is formed on this drive integrated circult structure 1 and this multi-wave length illuminating diode array group 3 by coating (coating) and pre-roasting (pre-cure) step respectively.
Next, please cooperate shown in Fig. 5 D, this insulating barrier of patterning (patterning) La, one be used for to form " cover two and be arranged at respectively between per two light emitting diode matrixs (that is, between this first wavelength light emitting diode matrix 31 and this second wavelength light emitting diode matrix 32; and between this second wavelength light emitting diode matrix 32 and this three-wavelength light emitting diode matrix 33) the first width clearance G 1 ", " cover the second width clearance G 2 between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1 ", and patterned insulation layer (the patterned insulative layer) L10 (S110) of " exposing described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 ".In other words, hide this insulating barrier La and cooperate ultraviolet light U to shine this insulating barrier La by light shield (mask) M with predetermined pattern, to produce this patterned insulation layer L10.
Next, please cooperate (Fig. 5 E1 is for before carrying out the baking program) shown in Fig. 5 E1, mode (for example by a print head H1) by printing or coating, with described electrically conductive liquid material (liquid conductive material) 40a respectively " being formed between the corresponding described light-emitting diode weld pad 30 " (that is, between this first wavelength light emitting diode matrix 31 and this second wavelength light emitting diode matrix 32, and between this second wavelength light emitting diode matrix 32 and this three-wavelength light emitting diode matrix 33), and " being formed between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " (S112).
Then, please cooperate (Fig. 5 E2 is for after carrying out the baking program) shown in Fig. 5 E2, solidify described electrically conductive liquid material 40a, so that described electrically conductive liquid material 40a hardens respectively and becomes a plurality of conducting elements (conductive element) 40a ' (S114).That is, mode by printing or coating, with described be electrically connected at respectively between the described light-emitting diode weld pad 30 that be shaped (that is, between this first wavelength light emitting diode matrix 31 and this second wavelength light emitting diode matrix 32, and this second wavelength light emitting diode matrix 32 and this three-wavelength light emitting diode matrix 33 between), reach the conducting element 40a ' between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30.
In other words, the first of described conducting element 40a ' is electrically connected at respectively between the described light-emitting diode weld pad 30 of a wherein side of the described drive integrated circult weld pad 10 of a side wherein and this first wavelength light emitting diode matrix 31.The second portion of described conducting element 40a ' is electrically connected at respectively between the described light-emitting diode weld pad 30 of a wherein side of the described light-emitting diode weld pad 30 of opposite side of this first wavelength light emitting diode matrix 31 and this second wavelength light emitting diode matrix 32.The third part of described conducting element 40a ' is electrically connected at respectively between the described light-emitting diode weld pad 30 of a wherein side of the described light-emitting diode weld pad 30 of opposite side of this second wavelength light emitting diode matrix 32 and this three-wavelength light emitting diode matrix 33.The 4th part of described conducting element 40a ' is electrically connected at respectively between the described light-emitting diode weld pad 10 of the described light-emitting diode weld pad 30 of opposite side of this three-wavelength light emitting diode matrix 33 and an other side.
Then, please cooperate shown in Fig. 5 F, remove a part and form in patterned insulation layer L10 on this multi-wave length illuminating diode array group 3, exposing described LED crystal particle L1, L2, L3 (S116), and then form multi-wave length illuminating diode array structure dress module P1.
Next, after this step S116, each multi-wave length illuminating diode array structure dress module P1 is cut down (S118) from this wafer W.
And then, please cooperate shown in Fig. 5 G, this drive integrated circult structure 1 is set on a circuit board (PCB) 5, wherein this circuit board 5 has at least one output/input weld pad (input/output pad) 50 (S120) (Fig. 5 G exposes a pair of output/input weld pad 50); Afterwards, form conductive structure (conductive structure) 6 (S122) (Fig. 5 G exposes pair of conductive structure 6) that are electrically connected between this drive integrated circult structure 1 and this at least one output/input weld pad 50, wherein this conductive structure 6 can pass through a routing (wire-bounding) mode, reaches between this at least one output/input weld pad 50 (Fig. 5 G exposes two groups of corresponding power supply weld pad 10a and this output/input weld pad 50) with a wherein power supply weld pad (power pad) 10a that is electrically connected at this drive integrated circult structure 1.
In other words, by Fig. 5 G as can be known, this multi-wave length illuminating diode array structure dress module P1 comprises: this drive integrated circult structure 1, this adhesion components 2, this multi-wave length illuminating diode array group 3, and described conducting element 40a '.Wherein, the upper end of this drive integrated circult structure 1 has at least one groove 11 and a plurality of drive integrated circult weld pad 10.This multi-wave length illuminating diode array group 3 is placed in this at least one groove 11, and this multi-wave length illuminating diode array group 3 has light-emitting diode weld pad 30 and a plurality of LED crystal particle L1, L2, L3 that is electrically connected at described light-emitting diode weld pad 30 respectively of a plurality of corresponding described drive integrated circult weld pads 10.This adhesion components 2 is arranged between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1.Described conducting element 40a ' is electrically connected at respectively between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30.
Moreover, this multi-wave length illuminating diode array structure dress module P1 can be arranged on this circuit board 5 with at least one output/input weld pad 50, and, electrically connect so that produce between this power supply weld pad (power pad) 10a and this at least one output/input weld pad 50 by this conductive structure 6.
See also Fig. 6, reach shown in Fig. 7 A to Fig. 7 E.Following described " step S204a is to step S216 " is " the step S2 that is described at each drive integrated circult structure 1 ".
By the flow chart of Fig. 6 as can be known, " the step S100 to S110 " with first embodiment is identical with " step S116 to S122 " respectively with " step S216 to S222 " for " the step S200 to S210 " of second embodiment.Wherein, second embodiment is with first the different of embodiment maximum: the mode of sticking by being stained with (stamping) reaches " being formed between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " with described electrically conductive liquid material 40b difference " being formed between the corresponding described light-emitting diode weld pad 30 ".
Please cooperate shown in Fig. 7 A and Fig. 7 D1, after the step S210 of second embodiment, further comprise:, a plurality of electrically conductive liquid material 40b difference " being formed between the corresponding described light-emitting diode weld pad 30 " are reached " being formed between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " (S212) by being stained with sticking mode.In other words, repeat the step of Fig. 7 A to Fig. 7 D1 (Fig. 7 D1 is for before carrying out the baking program), by being stained with sticking mode, recycling one be stained with sticking equipment D from a container V, be stained with mucus attitude electric conducting material 40b between the corresponding described light-emitting diode weld pad 30, and corresponding described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 between.Thus, the present invention by described electrically conductive liquid material 40b finish electric connection between the described light-emitting diode weld pad 30, and described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 between electric connection.
Then, please cooperate (Fig. 7 D2 is for after carrying out the baking program) shown in Fig. 7 D2, solidify described electrically conductive liquid material 40b, become a plurality of conducting element 40b ' (S214) so that described electrically conductive liquid material 40b hardens respectively.That is, by being stained with sticking mode and curing process, describedly be electrically connected at respectively between the described light-emitting diode weld pad 30 to be shaped, and described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 between conducting element 40b '.
Afterwards, please cooperate shown in Fig. 7 E, remove a part and form in patterned insulation layer L 10 on this multi-wave length illuminating diode array group 3, exposing described LED crystal particle L 1, L 2, L 3 (S216), and then form multi-wave length illuminating diode array structure dress module P 2.
See also Fig. 8, reach shown in Fig. 9 A to Fig. 9 C.Following described " step S304a is to step S318 " is " the step S3 that is described at each drive integrated circult structure 1 ".
By the flow chart of Fig. 8 as can be known, " the step S100 to S110 " with first embodiment is identical with " step S116 to S122 " respectively with " step S318 to S324 " for " the step S300 to S310 " of the 3rd embodiment.Wherein, the 3rd embodiment is with the different of first and second embodiment maximum: by the mode of steel plate printing (stencil printing), a plurality of electrically conductive liquid material 40c difference " being formed between the corresponding described light-emitting diode weld pad 30 " are reached " being formed between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 ".That is, by the mode of steel plate printing, " be electrically connected between the described light-emitting diode weld pad 30 ", reach the conducting element 40c ' of " being electrically connected between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " with the described difference that is shaped.
Please cooperate shown in Fig. 9 A, after the step S310 of the 3rd embodiment, further comprise: be provided with one and have the steel plate 7 of predetermined pattern 70 of corresponding this patterned insulation layer L 10 on this patterned insulation layer L 10 (S312).Therefore, cooperating of predetermined pattern 70 by this patterned insulation layer L 10 and this steel plate 7 is to form the groove of a plurality of being communicated in " between the described light-emitting diode weld pad 30 " and " between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 ".
And then, please cooperate shown in Fig. 9 B1, by the mode of steel plate printing (stencil printing), described electrically conductive liquid material 40c difference " being formed between the corresponding described light-emitting diode weld pad 30 " is reached " being formed between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " (S314).In other words, by the predetermined pattern 70 of this steel plate 7 and cooperating of this patterned insulation layer L10, reach " between corresponding described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 " in " between the corresponding described light-emitting diode weld pad 30 " to form (for example by a print head H2) a plurality of electrically conductive liquid material 40c respectively.
Afterwards, please cooperate shown in Fig. 9 B2, solidify described electrically conductive liquid material 40c, become a plurality of conducting element 40c ' (S316) so that described electrically conductive liquid material 40c hardens respectively.
Then, please cooperate shown in Fig. 9 C, remove a part and form in patterned insulation layer L 10 on this multi-wave length illuminating diode array group 3, exposing described LED crystal particle L 1, L 2, L 3 (S318), and then form multi-wave length illuminating diode array structure dress module P 3.
See also Figure 10, reach shown in Figure 11 A to Figure 11 E.Following described " step S404a is to step S418 " is " the step S4 that is described at each drive integrated circult structure 1 ".
By the flow chart of Figure 10 as can be known, " the step S100 to S110 " with first embodiment is identical with " step S118 to S122 " respectively with " step S420 to S424 " for " the step S400 to S410 " of the 4th embodiment.
Please cooperate shown in Figure 11 A, among the 4th embodiment, after step S410, further comprise: form one second insulating barrier (second insulative layer) L2 on this patterned insulation layer L10, and this second insulating barrier L b covers described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 (S412);
And then, please cooperate shown in Figure 11 B, this second insulating barrier of patterning (patterning) L b is (identical with the mode of Fig. 5 D, have cooperating of the light shield M of predetermined pattern and ultraviolet light U irradiation by one), cooperatively interact with this patterned insulation layer L 10 and expose second patterned insulation layer (the second patterned insulative layer) L 20 (S414) of described drive integrated circult weld pad 10 and described light-emitting diode weld pad 30 once more to form one.Therefore, by cooperating of this patterned insulation layer L 10 and this second patterned insulation layer L 20, to form the groove of a plurality of being communicated in " between the described light-emitting diode weld pad 30 " and " between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 ".
Then, please cooperate that (Figure 11 C1 is a profile shown in Figure 11 C1 and Figure 11 C2; Figure 11 C2 is a vertical view), form that a plurality of difference " are electrically connected between the described light-emitting diode weld pad 30 " and the conducting element 40D (S416) of " being electrically connected between described drive integrated circult weld pad 10 and the described light-emitting diode weld pad 30 ".That is, by the mode of evaporation (vapor plating), sputter (sputtering), spraying (spray) or coating (coating), to form described conducting element 40D.
Then, please cooperate shown in Figure 11 D, remove this second patterned insulation layer L 2 and a part of patterned insulation layer L10 that forms on this multi-wave length illuminating diode array group 3, exposing described LED crystal particle L 1, L 2, L 3 (S418), and then form multi-wave length illuminating diode array structure dress module P 4.
In addition, the described drive integrated circult weld pad 10 of the same side of the various embodiments described above can be along a zigzag trajectory alignment, and above-mentioned described light-emitting diode weld pad 30 can also be along a zigzag track.Therefore, a plurality of LED crystal particle L 1 of this multi-wave length illuminating diode array group 3, L 2, L 3 more closely (compactly) be arranged in together.Moreover, according to different design requirements, described drive integrated circult weld pad 10 is trajectory alignment or along a zigzag trajectory alignment along a straight line selectively, and also trajectory alignment or along a zigzag trajectory alignment along a straight line selectively of described light-emitting diode weld pad 30.
In sum, multi-wave length illuminating diode array structure dress module P 1 of the present invention, P 2, P 3, P 4 are a kind of multi-wavelength light output module (multi-wavelength light-outputtingmodule), and it can be applicable on the photoinduction formula photo printer (light-sensing photo printer).
In addition, technical characterstic of the present invention is: at first, and at least one groove 11 of dry ecthing on a drive integrated circult structure 1; Then, (for example: the multi-wave length illuminating diode array group) put in this groove 11, and the surface of this multi-wave length illuminating element arrays group need increase extra circuit layout with a multi-wave length illuminating element arrays group; At last, again to print, to be coated with, to be stained with sticking or the steel plate printing process is reached the highdensity electric connection of 600dpi～1200dpi.Therefore, but the present invention's shorten product sizes, the material cost that reduces, and reduce because of high density and electrically connect required production cost.
The present invention can make " electric connection between this multi-wave length illuminating diode array group 3 and this drive integrated circult structure 1 " simultaneously and reach " electric connections between per two light emitting diode matrixs ", but not as conventional process, adopt one one to carry out the routing joint, therefore the present invention not only has the advantage of shorten product sizes and reduction manufacturing cost, and the present invention also has because of using manufacture of semiconductor to increase the advantage of speed of production.
Moreover, multi-wave length illuminating diode array structure dress module of the present invention is the non-mechanism of a miniaturization scan-type multi-wavelength light output device, it can be incorporated on notebook computer (notebook), light computer on knee (laptop), PDA(Personal Digital Assistant), the mobile phone portable apparatus such as (mobile phone), so that the action photochrome is printed is achieved.
The above; only be the detailed description of the specific embodiment of one of the best of the present invention and graphic; but feature of the present invention is not limited thereto; be not in order to restriction the present invention; all protection ranges of the present invention should be as the criterion with claims; all closing in the embodiment of the spirit variation similar of claims of the present invention with it; all should be contained in the category of the present invention; any those skilled in the art in the field of the invention, can think easily and variation or modify and all can be encompassed in following claim of the present invention.
Claims (26)
1. the construction method of a multi-wave length illuminating diode array structure dress module is characterized in that, comprises the following steps:
Be shaped at least one groove on a drive integrated circult structure;
One multi-wave length illuminating diode array group is set in this at least one groove; And
Form a plurality of conducting elements that are electrically connected between this drive integrated circult structure and this multi-wave length illuminating diode array group.
2. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 1, it is characterized in that: this at least one groove is formed by etching or machining.
3. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 1, it is characterized in that: be provided with in the step of this multi-wave length illuminating diode array group in this at least one groove, further comprise: this multi-wave length illuminating diode array group is attached in this at least one groove by an adhesion components.
4. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 1, it is characterized in that: this multi-wave length illuminating diode array group has three first wavelength light emitting diode matrixs that have different wave length respectively, the second wavelength light emitting diode matrix, and three-wavelength light emitting diode matrix, this first, second, third wavelength light emitting diode matrix is arranged side by side each other, and this second wavelength light emitting diode matrix is arranged between this first wavelength light emitting diode matrix and this three-wavelength light emitting diode matrix.
5. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 4, it is characterized in that: the both sides of this drive integrated circult structure have a plurality of drive integrated circult weld pads, this is first years old, second, the three-wavelength light emitting diode matrix has a plurality of light-emitting diode weld pads and a plurality of LED crystal particle respectively, described light-emitting diode weld pad be positioned at this first, second, the both sides of three-wavelength light emitting diode matrix, the both sides of this first wavelength light emitting diode matrix have a plurality of light-emitting diode weld pads and a plurality of LED crystal particle, the described LED crystal particle of this first wavelength light emitting diode matrix is the light-emitting diode weld pad that is electrically connected at a wherein side of this first wavelength light emitting diode matrix respectively, the described LED crystal particle of this second wavelength light emitting diode matrix is the described corresponding light-emitting diode weld pad that is electrically connected at this second wavelength light emitting diode matrix respectively, and the described LED crystal particle of this three-wavelength light emitting diode matrix is the light-emitting diode weld pad that is electrically connected at a wherein side of this three-wavelength light emitting diode matrix respectively.
6. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 5, it is characterized in that: the first of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described drive integrated circult weld pad of a side wherein and this first wavelength light emitting diode matrix, the second portion of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described light-emitting diode weld pad of opposite side of this first wavelength light emitting diode matrix and this second wavelength light emitting diode matrix, the third part of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described light-emitting diode weld pad of opposite side of this second wavelength light emitting diode matrix and this three-wavelength light emitting diode matrix, and the 4th part of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of the described light-emitting diode weld pad of opposite side of this three-wavelength light emitting diode matrix and an other side.
7. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 6 is characterized in that, before the step of the described conducting element of above-mentioned formation, further comprises:
Form an insulating barrier on this drive integrated circult structure and this multi-wave length illuminating diode array group; And
This insulating barrier of patterning, forming a patterned insulation layer, it is used to cover two and is arranged at the first width gap between per two light emitting diode matrixs respectively, is used to cover the second width gap between this multi-wave length illuminating diode array group and this drive integrated circult structure and is used to expose described drive integrated circult weld pad and described light-emitting diode weld pad.
8. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 6 is characterized in that the step of the described conducting element of above-mentioned formation comprises:
Mode by printing or coating is formed at a plurality of electrically conductive liquid materials between the corresponding described light-emitting diode weld pad respectively and is formed between corresponding described drive integrated circult weld pad and the described light-emitting diode weld pad;
Solidify described electrically conductive liquid material, become described conducting element so that described electrically conductive liquid material hardens respectively; And
Remove a part and form in patterned insulation layer on this multi-wave length illuminating diode array group, to expose described LED crystal particle.
9. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 6 is characterized in that the step of the described conducting element of above-mentioned formation comprises:
By being stained with sticking mode, being formed at a plurality of electrically conductive liquid materials between the corresponding described light-emitting diode weld pad respectively and being formed between corresponding described drive integrated circult weld pad and the described light-emitting diode weld pad;
Solidify described electrically conductive liquid material, become described conducting element so that described electrically conductive liquid material hardens respectively; And
Remove a part and form in patterned insulation layer on this multi-wave length illuminating diode array group, to expose described LED crystal particle.
10. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 6 is characterized in that the step of the described conducting element of above-mentioned formation comprises:
Be provided with one and have the steel plate of predetermined pattern of corresponding this patterned insulation layer on this patterned insulation layer;
By the mode of steel plate printing, be formed at a plurality of electrically conductive liquid materials between the corresponding described light-emitting diode weld pad respectively and be formed between corresponding described drive integrated circult weld pad and the described light-emitting diode weld pad;
Solidify described electrically conductive liquid material, become described conducting element so that described electrically conductive liquid material hardens respectively; And
Remove a part and form in patterned insulation layer on this multi-wave length illuminating diode array group, to expose described LED crystal particle.
11. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 6 is characterized in that the step of the described conducting element of above-mentioned formation comprises:
Form one second insulating barrier on this patterned insulation layer, and this second insulating barrier covers described drive integrated circult weld pad and described light-emitting diode weld pad;
This second insulating barrier of patterning cooperatively interacts with this patterned insulation layer and exposes second patterned insulation layer of described drive integrated circult weld pad and described light-emitting diode weld pad to form one;
Form and describedly be electrically connected between the corresponding described light-emitting diode weld pad respectively and be electrically connected at conducting element between corresponding described drive integrated circult weld pad and the described light-emitting diode weld pad; And
Remove this second patterned insulation layer and a part of patterned insulation layer that forms on this multi-wave length illuminating diode array group, to expose described LED crystal particle.
12. the construction method of multi-wave length illuminating diode array structure as claimed in claim 1 dress module is characterized in that: two of formation are between 5～10 microns the second width gap between this multi-wave length illuminating diode array group and this drive integrated circult structure.
13. the construction method of multi-wave length illuminating diode array structure dress module as claimed in claim 1 is characterized in that, after the step of the described conducting element of above-mentioned formation, further comprises:
This drive integrated circult structure is set on a circuit board, wherein this circuit board has at least one output/input weld pad; And
Form a conductive structure that is electrically connected between this drive integrated circult structure and this at least one output/input weld pad.
14. a multi-wave length illuminating diode array structure dress module is characterized in that, comprising:
One drive integrated circult structure, its surface has at least one groove;
One multi-wave length illuminating diode array group, it is placed in this at least one groove; And
A plurality of conducting elements, it is electrically connected at respectively between this drive integrated circult structure and this multi-wave length illuminating diode array group.
15. multi-wave length illuminating diode array structure dress module as claimed in claim 14 is characterized in that further comprise an adhesion components, it is arranged between this multi-wave length illuminating diode array group and this drive integrated circult structure.
16. multi-wave length illuminating diode array structure dress module as claimed in claim 14, it is characterized in that: this multi-wave length illuminating diode array group has three first wavelength light emitting diode matrixs that have different wave length respectively, the second wavelength light emitting diode matrix, and three-wavelength light emitting diode matrix, this first, second, third wavelength light emitting diode matrix is arranged side by side each other, and this second wavelength light emitting diode matrix is arranged between this first wavelength light emitting diode matrix and this three-wavelength light emitting diode matrix.
17. multi-wave length illuminating diode array structure dress module as claimed in claim 16, it is characterized in that: the both sides of this drive integrated circult structure have a plurality of drive integrated circult weld pads, this is first years old, second, the three-wavelength light emitting diode matrix has a plurality of light-emitting diode weld pads and a plurality of LED crystal particle respectively, described light-emitting diode weld pad be positioned at this first, second, the both sides of three-wavelength light emitting diode matrix, the both sides of this first wavelength light emitting diode matrix have a plurality of light-emitting diode weld pads and a plurality of LED crystal particle, the described LED crystal particle of this first wavelength light emitting diode matrix is the light-emitting diode weld pad that is electrically connected at a wherein side of this first wavelength light emitting diode matrix respectively, the described LED crystal particle of this second wavelength light emitting diode matrix is the described corresponding light-emitting diode weld pad that is electrically connected at this second wavelength light emitting diode matrix respectively, and the described LED crystal particle of this three-wavelength light emitting diode matrix is the light-emitting diode weld pad that is electrically connected at a wherein side of this three-wavelength light emitting diode matrix respectively.
18. multi-wave length illuminating diode array structure dress module as claimed in claim 17, it is characterized in that: the first of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described drive integrated circult weld pad of a side wherein and this first wavelength light emitting diode matrix, the second portion of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described light-emitting diode weld pad of opposite side of this first wavelength light emitting diode matrix and this second wavelength light emitting diode matrix, the third part of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of a wherein side of the described light-emitting diode weld pad of opposite side of this second wavelength light emitting diode matrix and this three-wavelength light emitting diode matrix, and the 4th part of described conducting element is electrically connected at respectively between the described light-emitting diode weld pad of the described light-emitting diode weld pad of opposite side of this three-wavelength light emitting diode matrix and an other side.
19. multi-wave length illuminating diode array structure as claimed in claim 17 dress module is characterized in that: the described light-emitting diode weld pad that is positioned at the described drive integrated circult weld pad of the same side and is positioned at the same side is trajectory alignment all along a straight line.
20. multi-wave length illuminating diode array structure as claimed in claim 17 dress module is characterized in that: the described light-emitting diode weld pad that is positioned at the described drive integrated circult weld pad of the same side and is positioned at the same side is along a zigzag trajectory alignment.
21. multi-wave length illuminating diode array structure dress module as claimed in claim 17, it is characterized in that: the described drive integrated circult weld pad that is positioned at the same side is trajectory alignment or along a zigzag trajectory alignment along a straight line selectively, and also trajectory alignment or along a zigzag trajectory alignment along a straight line selectively of the described light-emitting diode weld pad that is positioned at the same side.
22. multi-wave length illuminating diode array structure as claimed in claim 16 dress module is characterized in that: form two between the described light emitting diode matrix between 5～10 microns the first width gap.
23. multi-wave length illuminating diode array structure as claimed in claim 22 dress module is characterized in that: two of formation are between 5～10 microns width gap between this multi-wave length illuminating diode array group and this drive integrated circult structure.
24. multi-wave length illuminating diode array structure dress module as claimed in claim 23 is characterized in that, further comprises: in order to cover the insulating barrier in these two first width gaps and these two second width gaps.
25. multi-wave length illuminating diode array structure dress module as claimed in claim 14 is characterized in that, further comprises: a circuit board, it has at least one output/input weld pad, and wherein this drive integrated circult structure is arranged on this circuit board.
26. multi-wave length illuminating diode array structure dress module as claimed in claim 25 is characterized in that further comprise: one is electrically connected at the conductive structure between this drive integrated circult structure and this at least one output/input weld pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101487429A CN101388347A (en) | 2007-09-11 | 2007-09-11 | Multi-wave length illuminating diode array packaging module and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101487429A CN101388347A (en) | 2007-09-11 | 2007-09-11 | Multi-wave length illuminating diode array packaging module and packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101388347A true CN101388347A (en) | 2009-03-18 |
Family
ID=40477664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101487429A Pending CN101388347A (en) | 2007-09-11 | 2007-09-11 | Multi-wave length illuminating diode array packaging module and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101388347A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280556A (en) * | 2014-07-22 | 2016-01-27 | 严敏 | Integration method of LED display module and LED display module |
-
2007
- 2007-09-11 CN CNA2007101487429A patent/CN101388347A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280556A (en) * | 2014-07-22 | 2016-01-27 | 严敏 | Integration method of LED display module and LED display module |
| CN105280556B (en) * | 2014-07-22 | 2018-02-23 | 环视先进数字显示无锡有限公司 | A kind of integrated approach of LED display modules |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101170874B (en) | Method for forming transcription circuit and method for manufacturing circuit board | |
| EP0460194B1 (en) | A light emitting diode printhead having improved signal distribution apparatus | |
| CN103376946B (en) | Touch panel and manufacturing method thereof | |
| KR101447984B1 (en) | Light-emitting device, print head and image forming apparatus | |
| US5025555A (en) | Method of producing electric circuit patterns | |
| CN100471362C (en) | Method for manufacturing flexible circuit board | |
| US7239333B2 (en) | LED array package structure and method thereof | |
| JPH06115158A (en) | Led exposure head with overlap electronic circuit | |
| CN101388347A (en) | Multi-wave length illuminating diode array packaging module and packaging method thereof | |
| JP5206511B2 (en) | Print head and image forming apparatus | |
| CN110687727B (en) | Preparation method of display panel | |
| JP2011187514A (en) | Aggregate printed wiring board, printed wiring board device, print head, and image forming apparatus | |
| CN101413646B (en) | Multiple-wave length luminous module | |
| CN101335223A (en) | LED array module packaging method | |
| TW200910629A (en) | Multi-wavelength LED array package module and method for packaging the same | |
| CN101330081A (en) | LED array module and packaging method thereof | |
| US20050035358A1 (en) | Structure of light-emitting diode array module | |
| CN113394121A (en) | Large-size chip, manufacturing method thereof and large-size chip wafer | |
| US8342707B2 (en) | Multi-wavelength light-emitting module | |
| US7759687B2 (en) | Multi-wavelength LED array package module and method for packaging the same | |
| US20090184332A1 (en) | Package structure module with high density electrical connections and method for packaging the same | |
| JP2002217248A (en) | Transfer plate for pattern formation and method of manufacturing substrate for semiconductor device using it | |
| JP2010287765A (en) | Imprinting method, wiring pattern forming method, and multilayer electronic component | |
| JP6071565B2 (en) | Method for manufacturing liquid discharge head | |
| US20090107951A1 (en) | Method of packaging an LED array module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090318 |