CN105274496B - Mutation formula impact air-flow grows the method for SiNx mask layer online in a kind of MOCVD - Google Patents
Mutation formula impact air-flow grows the method for SiNx mask layer online in a kind of MOCVD Download PDFInfo
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- CN105274496B CN105274496B CN201410270321.3A CN201410270321A CN105274496B CN 105274496 B CN105274496 B CN 105274496B CN 201410270321 A CN201410270321 A CN 201410270321A CN 105274496 B CN105274496 B CN 105274496B
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Abstract
The present invention provides mutation formula impact air-flow in a kind of MOCVD and grows SiN onlinexThe method of mask layer, characterized in that mutation causes to grow SiN online under unstable air-flow environment in MOCVD reaction chamberxMask layer.Online SiNxMask layer is a kind of critical function layer in MOCVD Material growth, and good stress release effect, the Yanzhong especially outside GaN-On-Silicon are also able to achieve while capable of greatly improving crystal quality.The present invention provides mutation formula impact air-flows to grow SiN onlinexThe method of mask layer has broken the requirement of airflow stability in MOCVD growth, using mutation formula impact air-flow, so that SiNxMask layer is more scattered random, to realize the effect of better dislocation barriers function layer, can also discharge bring stress in Heteroepitaxy well.
Description
Technical field
The invention belongs to semiconductor material manufacturing fields, are related to the semiconductor devices growth technology of high quality, specifically
For a kind of MOCVD (Metal-organic Chemical Vapor Deposition, metallo-organic compound chemical vapor deposition
Form sediment) in mutation formula impact air-flow grow SiN onlinexThe method of mask layer.
Background technique
It is raw since semiconductor substrate (Si, sapphire etc.) has different lattice mismatches and thermal expansion coefficient from GaN epitaxial layer
Internal stress can be generated in epitaxial layer after length.In certain fields, the stress field in epitaxial layer is influenced or is restrict to some extent
The performance of device.The stress field of hetero-epitaxy becomes one of the puzzlement problem of semiconductor field.Currently, scientific researcher is not by
Same approach carries out stress release, also made breakthrough progress.SiN is wherein grown onlinexMask layer is that one kind efficiently disappears
The technology of de-stress field, while it can also obstruct dislocation and realize that epitaxial lateral overgrowth technology further increases crystal quality again.So
And current online growth SiNxThe scheme of mask layer is all based on MOCVD and needs to adjust under the premise of stable air-flow, mainly
It is realized by changing temperature, pressure and source flux ratio.But actually online growth SiNxMask layer is one layer discontinuous
Or complete film, it, which needs to reserve lower layer's epitaxial layer, in principle becomes the growth window of upper layer extension, loose structure
There is bigger benefit to stress release.So the present invention is from SiNxMask layer function quintessence sets out, and needs when breaking MOCVD growth
The routine for wanting steady air flow designs a kind of new online growth SiNxExposure mask layered scheme.
Summary of the invention
The present invention provides mutation formula impact air-flow in a kind of MOCVD and grows SiN onlinexThe method of mask layer.It is broken
MOCVD epitaxy growth needs the technical characteristic of steady air flow to develop one using a kind of growth pattern of mutation formula impact air-flow
SiN is grown online in kind MOCVDxThe method of mask layer.The system that the present invention enters reaction chamber using multi-pipeline in MOCVD is led to
It crosses to SiNxThe pipe switch of the different flow of mask layer growth phase controls, and realizes that the mutation for entering MOCVD reaction chamber is impacted
Air-flow, so that crystal quality can more be improved by growing, the SiN of buffering or release dissimilar materials growth stressxMask layer.
Fig. 1 show the MOCVD reaction chamber air inlet schematic diagram of standard, and 1 is reaction chamber, 2,9 be respectively III group and V race into
Gas total pipeline, the principle of the present invention is exactly the upstream line switch by adjusting two total inlet pipe roads, so that reaction Indoor Air
10% or more mutation fluctuation occurs for the scale of construction, and this gas shock is kept in the long period, carries out SiN during changing hereinx
Mask layer growth.
Solution provided by the invention is as follows:
Mutation formula impact air-flow grows SiN online in a kind of MOCVDxThe method of mask layer, characterized in that MOCVD reaction
Mutation causes to grow SiN online under unstable air-flow environment in chamberxMask layer.
It is mutated formula impact air-flow in the MOCVD and grows SiN onlinexThe method of mask layer, characterized in that enter
The gas pulsation of MOCVD reaction chamber is greater than 10%.
It is mutated formula impact air-flow in the MOCVD and grows SiN onlinexThe method of mask layer, characterized in that pass through adjusting
The upstream various inlet pipe switch in two total inlet pipe roads of MOCVD reaction chamber realizes unstable air-flow.
It is mutated formula impact air-flow in the MOCVD and grows SiN onlinexThe method of mask layer, characterized in that utilize
Multi-pipeline enters the system of reaction chamber in MOCVD reaction chamber, by SiNxThe pipeline of the different flow of mask layer growth phase
Switch control realizes the mutation impact air-flow for entering MOCVD reaction chamber.
It is mutated formula impact air-flow in the MOCVD and grows SiN onlinexThe method of mask layer, characterized in that pass through adjusting
The upstream inlet pipe switch of MOCVD reaction chamber so that 10% or more mutation fluctuation occurs for gas flow in reaction chamber, and is kept
This gas shock carries out SiN during changing hereinxMask layer growth.
Through the invention, SiN is grown online using impact airflowxThe method of mask layer realizes the heterogeneous material of high quality
The preparation of gallium nitride film on material can also especially greatly reduce growth of the gallium nitride material in foreign substrate and answer
Power.Better basis is provided to prepare device for dissimilar materials growing gallium nitride.
Detailed description of the invention
Fig. 1 is the MOCVD reaction chamber air inlet schematic diagram of standard.
Fig. 2 is SiNxSystem mode schematic diagram before mask material is grown.
Fig. 3 is embodiment 1SiNxSystem mode schematic diagram when mask material is grown.
Fig. 4 is embodiment 2SiNxSystem mode schematic diagram when mask material is grown.
Fig. 5 is embodiment 3SiNxSystem mode schematic diagram when mask material is grown.
Marginal data: 1 is reaction chamber, and 2,9 be respectively III group and V race inlet manifold road；3 be SiH4Or carrier gas channel, 4,
5 be ammonia pipeline, and 6,7 be carrier gas channel, and 8 be the source MO admission line.
In Fig. 2-Fig. 5, shade pipeline indicates on state, and white pipeline indicates closed state.
Specific embodiment
Embodiment 1
Fig. 2 is SiNxSystem mode schematic diagram before mask material is grown, 1 is reaction chamber, and 2 be V race inlet channel, and 3 are
SiH4Or carrier gas channel, 4,5 be ammonia pipeline, and 6,7 be carrier gas channel, and 8 be the source MO admission line, and 9 be III group inlet channel.
Shade pipeline is on state.Fig. 3 is SiNxSystem mode schematic diagram when mask material is grown, white pipeline are to close shape
State.We are to realize the effect of mutation formula impact air-flow by directly closing III group carrier gas channel in this embodiment.
Embodiment 2
Fig. 2 is SiNxSystem mode schematic diagram before mask material is grown, 1 is reaction chamber, and 2 be V race inlet channel, and 3 are
SiH4Or carrier gas channel, 4,5 be ammonia pipeline, and 6,7 be carrier gas channel, and 8 be the source MO admission line, and 9 be III group inlet channel.
Shade pipeline is on state.Fig. 4 is SiNxSystem mode schematic diagram when mask material is grown, white pipeline are to close shape
State.We are to realize the effect of mutation formula impact air-flow by directly closing V race ammonia pipeline in this embodiment.
Embodiment 3
Fig. 2 is SiNxSystem mode schematic diagram before mask material is grown, 1 is reaction chamber, and 2 be V race inlet channel, and 3 are
SiH4Or carrier gas channel, 4,5 be ammonia pipeline, and 6,7 be carrier gas channel, and 8 be the source MO admission line, and 9 be III group inlet channel.
Shade pipeline is on state.Fig. 5 is SiNxSystem mode schematic diagram when mask material is grown, white pipeline are to close shape
State.We are to realize that mutation formula impacts gas by simultaneously closing off III group carrier gas channel and V race ammonia pipeline in this embodiment
The effect of stream.
Online SiNxMask layer is a kind of critical function layer in MOCVD Material growth, can greatly improve crystal quality
While be also able to achieve good stress release effect, the Yanzhong especially outside GaN-On-Silicon.The present invention provides mutation
Formula impact air-flow grows SiN onlinexThe method of mask layer has broken the requirement of airflow stability in MOCVD growth, has utilized mutation
Formula impact air-flow, so that SiNxMask layer is more scattered random, to realize the effect of better dislocation barriers function layer, also can
Bring stress in Heteroepitaxy is discharged well.
Claims (5)
1. be mutated formula impact air-flow in a kind of MOCVD grows SiN onlinexThe method of mask layer, characterized in that reacted using MOCVD
Multi-pipeline enters the system of reaction chamber in chamber, realizes the mutation impact air-flow for entering MOCVD reaction chamber, dashes forward in MOCVD reaction chamber
Change causes to grow SiN online under unstable air-flow environmentxMask layer.
2. be mutated formula impact air-flow in MOCVD as described in claim 1 grows SiN onlinexThe method of mask layer, characterized in that
Gas pulsation into MOCVD reaction chamber is greater than 10%.
3. be mutated formula impact air-flow in MOCVD as described in claim 1 grows SiN onlinexThe method of mask layer, characterized in that
Unstable air-flow is realized by adjusting the upstream various inlet pipe switch in two total inlet pipe roads of MOCVD reaction chamber.
4. be mutated formula impact air-flow in MOCVD as described in claim 1 grows SiN onlinexThe method of mask layer, characterized in that
By to SiNxThe pipe switch of the different flow of mask layer growth phase controls, and realizes that the mutation for entering MOCVD reaction chamber is rushed
Hit air-flow.
5. be mutated formula impact air-flow in MOCVD as described in claim 1 grows SiN onlinexThe method of mask layer, characterized in that
By adjusting the upstream inlet pipe switch of MOCVD reaction chamber, so that 10% or more mutation wave occurs for gas flow in reaction chamber
It is dynamic, and this gas shock is kept, SiN is carried out during changing hereinxMask layer growth.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410270321.3A CN105274496B (en) | 2014-06-17 | 2014-06-17 | Mutation formula impact air-flow grows the method for SiNx mask layer online in a kind of MOCVD |
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| CN201410270321.3A CN105274496B (en) | 2014-06-17 | 2014-06-17 | Mutation formula impact air-flow grows the method for SiNx mask layer online in a kind of MOCVD |
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| CN105274496A CN105274496A (en) | 2016-01-27 |
| CN105274496B true CN105274496B (en) | 2019-01-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697134A (en) * | 2004-05-14 | 2005-11-16 | 中国科学院物理研究所 | Method for preparing graphical substrate in situ by using SIN film |
| CN101550590A (en) * | 2009-03-31 | 2009-10-07 | 上海新傲科技有限公司 | Apparatus for growing multilayered epitaxial layer |
| CN102206814A (en) * | 2011-05-19 | 2011-10-05 | 广东昭信半导体装备制造有限公司 | Semiconductor film growth control device and semiconductor film growth control method |
| CN103348447A (en) * | 2010-11-15 | 2013-10-09 | 科林·汉弗莱斯 | Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3476754B2 (en) * | 2000-07-28 | 2003-12-10 | 士郎 酒井 | Method for manufacturing gallium nitride-based compound semiconductor |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697134A (en) * | 2004-05-14 | 2005-11-16 | 中国科学院物理研究所 | Method for preparing graphical substrate in situ by using SIN film |
| CN101550590A (en) * | 2009-03-31 | 2009-10-07 | 上海新傲科技有限公司 | Apparatus for growing multilayered epitaxial layer |
| CN103348447A (en) * | 2010-11-15 | 2013-10-09 | 科林·汉弗莱斯 | Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein |
| CN102206814A (en) * | 2011-05-19 | 2011-10-05 | 广东昭信半导体装备制造有限公司 | Semiconductor film growth control device and semiconductor film growth control method |
Non-Patent Citations (1)
| Title |
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| "SiC衬底上GaN薄膜和LED的制备与研究";宋世巍;《中国博士学位论文全文数据库 信息科技辑》;20140515;第I135-22页 |
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