CN105259969B - Band-gap reference circuit with small temperature coefficient - Google Patents
Band-gap reference circuit with small temperature coefficient Download PDFInfo
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- CN105259969B CN105259969B CN201510784936.2A CN201510784936A CN105259969B CN 105259969 B CN105259969 B CN 105259969B CN 201510784936 A CN201510784936 A CN 201510784936A CN 105259969 B CN105259969 B CN 105259969B
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Abstract
The invention relates to a band-gap reference circuit with a temperature coefficient correcting function. The band-gap reference circuit comprises an operational amplifier, an MOS transistor M1, an MOS transistor M2, an MOS transistor M3, a diode D1, a diode D2, a diode D3, a resistor R2 and a resistor R3, wherein the resistor R2 and the resistor R3 are connected to the diode D2 and the diode D3 in series respectively. The band-gap reference circuit further comprises a decoding and encoding circuit. The resistor R2 can be a variable resistor R20, and the resistor R3 can be a variable resistor R30. The other end of the variable resistor R30 is connected with the drain end of the MOS transistor M3, the other end of the variable resistor R20 is connected with the drain end of the MOS transistor M2, and the sliding end of the variable resistor R20 and the sliding end of the variable resistor R30 are both connected with the output end of the decoding and encoding circuit. The testing method and the circuit design are combined, so that the temperature curve of the band-gap circuit is well corrected, the band-gap output voltage technology is stable along with temperatures, and a high voltage foundation is laid for a DRAM chip to achieve a core performance parameter specified by SPEC under the high frequency.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit with temperature coefficient correction.
Background technology
At present band-gap reference circuit adopts traditional voltage-type structure mostly, and by design band-gap reference output voltage is ensured
With temperature, technique and supply voltage change within limits.The general principle of its work is as shown in figure 1, including computing
Amplifier, three diodes (D1, D2, D3) and two resistance R2, R3 being serially connected on two diodes (D2, D3), three
Metal-oxide-semiconductor.It is added by a positive temperature coefficient voltage and negative temperature coefficient voltage, and then obtains zero-temperature coefficient
Voltage.
And in head end test, the magnitude of voltage of band-gap reference under high temperature is measured first, according between measured value and desired value
Deviation, choose output voltage values under corresponding code adjustment high temperature.Adjustment code is laser fuse output.
With the reduction and the increase of technological process complexity of technology feature size, band-gap circuit output voltage values are with temperature
Variable quantity can be larger, and on a wafer, the temperature characterisitic that different chips shows is also different.If or with pass
The band-gap circuit of system and traditional front end adjustment trim methods, with regard to problem as shown in Figure 2 occurs.
What Fig. 2 center lines b was represented is the curve that ideally band-gap circuit output voltage is varied with temperature.
Line a's is band gap output voltage is varied with temperature in design and simulation aim curve；And line c1-c2 is then actual survey
The curve that band gap output voltage is varied with temperature in examination, in positive temperature coefficient.If with conventional front-end trim method, could only be by
Output voltage is adjusted near desired value under high temperature, and the voltage of band gap output is still very low under low temperature condition, much deviates mesh
Scale value.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of little band-gap reference circuit of temperature coefficient.
The technical solution of the present invention：
A kind of little band-gap reference circuit of temperature coefficient, including operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3,
Diode D1, diode D2, diode D3, the resistance R2 being connected in respectively on diode D2, the resistance R3 on triode D3, its
It is characterized in that：Also include decoding coding circuit, the resistance R2 is have variable to have variable resistor R20, the resistance R3
Resistance R30, the other end of the variable resistor R30 is connected with the drain terminal of metal-oxide-semiconductor M3, the other end of the variable resistor R20 with
The drain terminal connection of metal-oxide-semiconductor M2, the sliding end of the variable resistor R20 and variable resistor R30 with the output of decoding coding circuit
End connection.
The adjustment code under adjustment code and low temperature under the input termination high temperature of the decoding coding circuit, the decoding coding
The output end output of circuit can adjust the control signal of variable resistor R20 and variable resistor R30 sizes.
Adjustment code under the high temperature is at high temperature that the output of band-gap reference circuit is electric according to the result of head end test
Pressure is adjusted to the logic adjustment code of desired value；Adjustment code under the low temperature is at low temperature by band according to the result of head end test
The output voltage of gap reference circuit is adjusted to the logic adjustment code of desired value.
Above-mentioned variable resistor R20 is identical with the adjustable extent of variable resistor R30.
Above-mentioned decoding coding circuit is subtracter.
Adjustment code under above-mentioned high temperature is the adjustment code at 90 DEG C, and the adjustment code under the low temperature is in 10 DEG C of ﹣
Adjustment code.
Advantage for present invention：
By the combination of method of testing and circuit design, the temperature curve of band-gap circuit has been corrected well, band has been reached
Gap output voltage is stable with temperature process, is that dram chip reaches at higher frequencies the core capabilities parameter that SPEC specifies and establishes
Very high voltage basis is determined.
Description of the drawings
Fig. 1 is the structural representation of existing band-gap reference circuit；
Fig. 2 is the change curve of output voltage based on existing band-gap reference circuit under high/low temperature；
Fig. 3 is the structural representation of the band-gap reference circuit of the present invention.
Specific embodiment
As shown in figure 3, a kind of little band-gap reference circuit of temperature coefficient, including operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor
M2, metal-oxide-semiconductor M3, diode D1, diode D2, diode D3 and decoding coding circuit, are connected in respectively on diode D2
, to there is variable resistor R20, resistance R3, can power transformation to there is variable resistor R30 for resistance R2, the resistance R3 on triode D3, resistance R2
The other end of resistance R30 is connected with the drain terminal of metal-oxide-semiconductor M3, and the other end of variable resistor R20 is connected with the drain terminal of metal-oxide-semiconductor M2, variable
The sliding end of resistance R20 and variable resistor R30 is connected with the output end of decoding coding circuit.
First in head end test, the band gap output voltage value under high temperature and under low temperature is measured, according to magnitude of voltage and target
Difference between value, obtains the adjustment trim codes under trim adjustment codes and the low temperature under high temperature, then this two groups of adjustment trim codes
A decoding coding circuit is sent into, goes to control the value of R3 and R2 resistance in band-gap circuit by its decoding coding output, and then adjusted
The temperature coefficient of whole band-gap circuit, so as to ensure band gap high/low temperature under voltage difference within limits.
The input of decoding coding circuit is two groups of logic adjustment trim codes, and one group is that output voltage is adjusted to into mesh under high temperature
The logic adjustment trim codes of scale value, another set is that output voltage is adjusted to into the logic adjustment trim codes of desired value under low temperature,
Output is one group of logic adjustment trim code, sends into R2＆R3 resistance and adjusts R2/R3 resistances up, is finally reached correction temperature curve
Purpose.
Embodiment：
First in head end test, respectively measure 90 DEG C at and 10 DEG C of ﹣ band gap output voltage value, according to magnitude of voltage and mesh
Difference between scale value, obtains the adjustment trim codes at 10 DEG C of adjustment trim codes and ﹣ at 90 DEG C, then this two groups of adjustment trim
Code sends into a decoding coding circuit, goes to control conditioned circuit R30 and R20 resistance in band-gap circuit by its decoding coding output
Value, and then adjust band-gap circuit temperature coefficient, so as to ensure band gap high/low temperature under voltage difference within limits.Translate
Code coding circuit can be simple subtracter, or a kind of algorithm circuit.
Claims (4)
1. a kind of little band-gap reference circuit of temperature coefficient, including operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, two
Pole pipe D1, diode D2, diode D3, the resistance R2 being connected in respectively on diode D2, the resistance R3 on triode D3, it is special
Levy and be：Also include decoding coding circuit, the resistance R2 is have variable resistor to have variable resistor R20, the resistance R3
R30, the other end of the variable resistor R30 is connected with the drain terminal of metal-oxide-semiconductor M3, the other end and metal-oxide-semiconductor of the variable resistor R20
The drain terminal connection of M2, the sliding end of the variable resistor R20 and variable resistor R30 connects with the output end of decoding coding circuit
Connect；
The adjustment code under adjustment code and low temperature under the input termination high temperature of the decoding coding circuit, the decoding coding circuit
Output end output can adjust the control signal of variable resistor R20 and variable resistor R30 sizes；
Adjustment code under the high temperature is at high temperature to be adjusted the output voltage of band-gap reference circuit according to the result of head end test
The whole logic to desired value adjusts code；Adjustment code under the low temperature is at low temperature by band gap base according to the result of head end test
The output voltage of quasi- circuit is adjusted to the logic adjustment code of desired value.
2. the little band-gap reference circuit of temperature coefficient according to claim 1, it is characterised in that：The variable resistor R20
It is identical with the adjustable extent of variable resistor R30.
3. the little band-gap reference circuit of temperature coefficient according to claim 1 and 2, it is characterised in that：The decoding coding
Circuit is subtracter.
4. the little band-gap reference circuit of temperature coefficient according to claim 3, it is characterised in that：Adjustment under the high temperature
Code is adjustment code at 90 DEG C, and the adjustment code under the low temperature is the adjustment code in 10 DEG C of ﹣.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510784936.2A CN105259969B (en) | 2015-11-16 | 2015-11-16 | Band-gap reference circuit with small temperature coefficient |
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|---|---|---|---|
| CN201510784936.2A CN105259969B (en) | 2015-11-16 | 2015-11-16 | Band-gap reference circuit with small temperature coefficient |
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| CN105259969A CN105259969A (en) | 2016-01-20 |
| CN105259969B true CN105259969B (en) | 2017-04-19 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107992149B (en) * | 2016-10-27 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | Trimming method and trimming device of voltage band gap circuit |
| CN112447225A (en) * | 2019-08-30 | 2021-03-05 | 中兴通讯股份有限公司 | Method, device and storage medium for improving reliability of system DRAM |
| CN112327992A (en) * | 2020-11-20 | 2021-02-05 | 唯捷创芯(天津)电子技术股份有限公司 | Voltage bias circuit with adjustable output, chip and communication terminal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034535A (en) * | 2006-03-08 | 2007-09-12 | 天利半导体（深圳）有限公司 | Temperature coefficient adjustable reference circuit |
| CN101510108B (en) * | 2008-02-12 | 2012-02-22 | 精工爱普生株式会社 | Reference voltage generating circuit, integrated circuit device, and signal processing apparatus |
| CN205176720U (en) * | 2015-11-16 | 2016-04-20 | 西安紫光国芯半导体有限公司 | Band gap reference circuit that temperature coefficient is little |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004310444A (en) * | 2003-04-07 | 2004-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Voltage generating circuit |
| KR101547897B1 (en) * | 2012-12-21 | 2015-08-28 | 삼성전기주식회사 | Voltage control circuit with temperature compensation function |
| TWI502304B (en) * | 2013-06-03 | 2015-10-01 | Advanced Semiconductor Eng | Bandgap reference voltage generating circuit and electronic system using the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034535A (en) * | 2006-03-08 | 2007-09-12 | 天利半导体（深圳）有限公司 | Temperature coefficient adjustable reference circuit |
| CN101510108B (en) * | 2008-02-12 | 2012-02-22 | 精工爱普生株式会社 | Reference voltage generating circuit, integrated circuit device, and signal processing apparatus |
| CN205176720U (en) * | 2015-11-16 | 2016-04-20 | 西安紫光国芯半导体有限公司 | Band gap reference circuit that temperature coefficient is little |
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Address after: 710055 Shaanxi City, Xi'an province high tech Road No. 38, innovation center, A, block, floor 4 Applicant after: XI'AN UNIIC SEMICONDUCTORS Co.,Ltd. Address before: 710055 Shaanxi City, Xi'an province high tech Road No. 38, innovation center, A, block, floor 4 Applicant before: Xi'an Sinochip Semiconductors Co., Ltd. |
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