CN205176720U - Band gap reference circuit that temperature coefficient is little - Google Patents
Band gap reference circuit that temperature coefficient is little Download PDFInfo
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- CN205176720U CN205176720U CN201520912568.0U CN201520912568U CN205176720U CN 205176720 U CN205176720 U CN 205176720U CN 201520912568 U CN201520912568 U CN 201520912568U CN 205176720 U CN205176720 U CN 205176720U
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- gap reference
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Abstract
The utility model relates to a band gap reference circuit that temperature coefficient is little, including operational amplifier, MOS pipe M1, MOS pipe M2, MOS pipe M3, diode D1, diode D2, diode D3, the resistance R2 of polyphone on diode D2 respectively, resistance R3 on the triode D3, still including the decoding coding circuit, resistance R2 is for there being adjustable resistance R20, resistance R3 is for there being adjustable resistance R30, adjustable resistance R30's the other end and MOS pipe M3's drain terminal are connected, adjustable resistance R20's the other end and MOS pipe M2's drain terminal are connected, adjustable resistance R20 and adjustable resistance R30's slip end all is connected with the output of decoding coding circuit. The utility model discloses a test method and circuit design's combination, fine correction the temperature curve of band gap circuit, it is stable along with temperature technology to have reached band gap output voltage, the core performance parameter who reaches the SPEC regulation for the DRAM chip under the higher frequency has established very high voltage basis.
Description
Technical field
The utility model relates to a kind of band-gap reference circuit corrected with temperature coefficient.
Background technology
Current band-gap reference circuit adopts traditional voltage-type structure mostly, by design ensure band-gap reference output voltage with temperature, technique and supply voltage change within limits.The ultimate principle of its work as shown in Figure 1, two resistance R2, R3 comprising operational amplifier, three diodes (D1, D2, D3) and be serially connected on two diodes (D2, D3), three metal-oxide-semiconductors.Be added by a positive temperature coefficient (PTC) voltage and a negative temperature coefficient voltage, and then obtain the voltage of a zero-temperature coefficient.
And in head end test, first measure the magnitude of voltage of band-gap reference under high temperature, according to the deviation between measured value and desired value, choose output voltage values under corresponding code adjustment high temperature.Adjustment code is that laser fuse exports.
Along with the reduction of technology feature size and the increase of technological process complexity, band-gap circuit output voltage values variation with temperature amount can be comparatively large, and on a wafer, the temperature characterisitic that different chip list reveals is also different.If or by traditional band-gap circuit and traditional front end adjustment trim method, just there will be problem as shown in Figure 2.
What Fig. 2 center line b represented is the ideally temperature variant curve of band-gap circuit output voltage.
Line a's is the temperature variant aim curve of band gap output voltage in design and simulation; And line c1-
c2 is the temperature variant curve of band gap output voltage in actual test, in positive temperature coefficient (PTC).If by conventional front-end trim method, then output voltage under high temperature can only be adjusted near desired value, and the voltage that under low temperature condition, band gap exports is still very low, departs from desired value far away.
Summary of the invention
In order to solve the problem, the utility model proposes the band-gap reference circuit that a kind of temperature coefficient is little.
Technical solution of the present utility model:
The band-gap reference circuit that a kind of temperature coefficient is little, comprise operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, diode D1, diode D2, diode D3, be connected in the resistance R2 on diode D2 respectively, resistance R3 on triode D3, its special character is: also comprise decoding coding circuit, described resistance R2 is for there being variable resistor R20, described resistance R3 is for there being variable resistor R30, the other end of described variable resistor R30 is connected with the drain terminal of metal-oxide-semiconductor M3, the other end of described variable resistor R20 is connected with the drain terminal of metal-oxide-semiconductor M2, described variable resistor R20 is all connected with the output terminal of decoding coding circuit with the sliding end of variable resistor R30.
Adjustment code under the input termination high temperature of above-mentioned decoding coding circuit and the adjustment code under low temperature, the output terminal of described decoding coding circuit exports the control signal that can adjust variable resistor R20 and variable resistor R30 size.
Above-mentioned variable resistor R20 is identical with the adjustable extent of variable resistor R30.
Adjustment code under above-mentioned high temperature is the logic adjustment code under high temperature, the output voltage of band-gap reference circuit being adjusted to desired value; Adjustment code under described low temperature is the logic adjustment code under low temperature, the output voltage of band-gap reference circuit being adjusted to desired value.
Above-mentioned decoding coding circuit is subtracter.
Adjustment code under above-mentioned high temperature is the adjustment code 90 DEG C time, and the adjustment code under described low temperature is the adjustment code-10 DEG C time.
The advantage that the utility model has:
By circuit design, well correct the temperature curve of band-gap circuit, reached band gap output voltage and stablized with temperature process, establish very high voltage basis for dram chip reaches the core capabilities parameter that SPEC specifies at higher frequencies.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing band-gap reference circuit;
Fig. 2 is the change curve of output voltage under high/low temperature based on existing band-gap reference circuit;
Fig. 3 is the structural representation of band-gap reference circuit of the present utility model.
Embodiment
As shown in Figure 3, the band-gap reference circuit that a kind of temperature coefficient is little, comprise operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, diode D1, diode D2, diode D3 and decoding coding circuit, be connected in the resistance R2 on diode D2 respectively, resistance R3 on triode D3, resistance R2 is for there being variable resistor R20, resistance R3 is for there being variable resistor R30, the other end of variable resistor R30 is connected with the drain terminal of metal-oxide-semiconductor M3, the other end of variable resistor R20 is connected with the drain terminal of metal-oxide-semiconductor M2, variable resistor R20 is all connected with the output terminal of decoding coding circuit with the sliding end of variable resistor R30.
First in head end test, band gap output voltage value under measuring high temperature and under low temperature, according to the difference between magnitude of voltage and desired value, the trim obtained under high temperature adjusts the adjustment trim code under code and low temperature, again these two groups adjustment trim codes are sent into a decoding coding circuit, exported the value going to control R3 and R2 resistance in band-gap circuit by its decoding coding, and then the temperature coefficient of adjustment band-gap circuit, thus ensure that voltage difference under band gap high/low temperature within limits.
The input of decoding coding circuit is two groups of logic adjustment trim codes, one group is the logic adjustment trim code under high temperature, output voltage being adjusted to desired value, other one group is the logic adjustment trim code under low temperature, output voltage being adjusted to desired value, output is one group of logic adjustment trim code, send into R2 & R3 resistance and get on to adjust R2/R3 resistance, finally reach the object of Tc curve.
Embodiment:
First in head end test, with the band gap output voltage value of-10 DEG C at measuring 90 DEG C respectively, according to the difference between magnitude of voltage and desired value, obtain the adjustment trim code at 90 DEG C and the adjustment trim code at-10 DEG C, again these two groups adjustment trim codes are sent into a decoding coding circuit, exported the value going to control conditioned circuit R30 and R20 resistance in band-gap circuit by its decoding coding, and then the temperature coefficient of adjustment band-gap circuit, thus ensure that voltage difference under band gap high/low temperature within limits.Decoding coding circuit can be simple subtracter, also can be a kind of algorithm circuit.
Claims (6)
1. the band-gap reference circuit that a temperature coefficient is little, comprise operational amplifier, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, diode D1, diode D2, diode D3, be connected in the resistance R2 on diode D2 respectively, resistance R3 on triode D3, it is characterized in that: also comprise decoding coding circuit, described resistance R2 is for there being variable resistor R20, described resistance R3 is for there being variable resistor R30, the other end of described variable resistor R30 is connected with the drain terminal of metal-oxide-semiconductor M3, the other end of described variable resistor R20 is connected with the drain terminal of metal-oxide-semiconductor M2, described variable resistor R20 is all connected with the output terminal of decoding coding circuit with the sliding end of variable resistor R30.
2. the band-gap reference circuit that temperature coefficient according to claim 1 is little, it is characterized in that: the adjustment code under the input termination high temperature of described decoding coding circuit and the adjustment code under low temperature, the output terminal of described decoding coding circuit exports the control signal that can adjust variable resistor R20 and variable resistor R30 size.
3. the band-gap reference circuit that temperature coefficient according to claim 1 and 2 is little, is characterized in that: described variable resistor R20 is identical with the adjustable extent of variable resistor R30.
4. the band-gap reference circuit that temperature coefficient according to claim 2 is little, is characterized in that: the adjustment code under described high temperature is the logic adjustment code under high temperature, the output voltage of band-gap reference circuit being adjusted to desired value; Adjustment code under described low temperature is the logic adjustment code under low temperature, the output voltage of band-gap reference circuit being adjusted to desired value.
5. the band-gap reference circuit that temperature coefficient according to claim 3 is little, is characterized in that: described decoding coding circuit is subtracter.
6. the band-gap reference circuit that temperature coefficient according to claim 4 is little, is characterized in that: the adjustment code under described high temperature is the adjustment code 90 DEG C time, and the adjustment code under described low temperature is the adjustment code-10 DEG C time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520912568.0U CN205176720U (en) | 2015-11-16 | 2015-11-16 | Band gap reference circuit that temperature coefficient is little |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520912568.0U CN205176720U (en) | 2015-11-16 | 2015-11-16 | Band gap reference circuit that temperature coefficient is little |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205176720U true CN205176720U (en) | 2016-04-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520912568.0U Expired - Fee Related CN205176720U (en) | 2015-11-16 | 2015-11-16 | Band gap reference circuit that temperature coefficient is little |
Country Status (1)
| Country | Link |
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| CN (1) | CN205176720U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259969A (en) * | 2015-11-16 | 2016-01-20 | 西安华芯半导体有限公司 | Band-gap reference circuit with small temperature coefficient |
| CN107560747A (en) * | 2017-09-26 | 2018-01-09 | 珠海格力电器股份有限公司 | A kind of temperature checking method and its device, integrated circuit |
-
2015
- 2015-11-16 CN CN201520912568.0U patent/CN205176720U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259969A (en) * | 2015-11-16 | 2016-01-20 | 西安华芯半导体有限公司 | Band-gap reference circuit with small temperature coefficient |
| CN105259969B (en) * | 2015-11-16 | 2017-04-19 | 西安紫光国芯半导体有限公司 | Band-gap reference circuit with small temperature coefficient |
| CN107560747A (en) * | 2017-09-26 | 2018-01-09 | 珠海格力电器股份有限公司 | A kind of temperature checking method and its device, integrated circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20181116 |