CN105256286A - Atom gas chamber inner wall coating method for slowing down atomic spin relaxation - Google Patents
Atom gas chamber inner wall coating method for slowing down atomic spin relaxation Download PDFInfo
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- CN105256286A CN105256286A CN201510701368.5A CN201510701368A CN105256286A CN 105256286 A CN105256286 A CN 105256286A CN 201510701368 A CN201510701368 A CN 201510701368A CN 105256286 A CN105256286 A CN 105256286A
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Abstract
The invention provides an atom gas chamber inner wall coating method for slowing down atomic spin relaxation. The method includes the steps that firstly, rubidium atom steam is injected into an atom gas chamber; then, hydrogen with the pressure intensity of 10 Torr to 100 Torr is released into the atom gas chamber through hydride solid gas release agents (such as titanium hydride and calcium hydride), the pressure intensity is kept for tens to hundreds of hours at the temperature 50 DEG C to 150 DEG C, and a layer of rubidium hydride thin film can be attached to the inner wall of the atom gas chamber; and finally, hydrogen left in the gas chamber is evacuated, and the coating process is finished. Hydrogen is generated through the solid gas release agents in the coating process; compared with a traditional method that a high-pressure hydrogen bottle is used as a hydrogen source, the process safety is improved when rubidium hydride coating is conducted on the inner wall of the atom gas chamber, and hydrogen left in the gas chamber after rubidium hydride coating is evacuated; and compared with the method for directly sealing hydrogen in the gas chamber, stability of performance of the atom gas chamber is easily improved.
Description
Technical field
The present invention relates to atomic air chamber preparing technical field, particularly a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation.
Background technology
Atom sensing air chamber is the core physical assemblies of the atom sensing instrument such as atom inertia type instrument, atomic clock, atom magnetometer, and its performance perameter directly affects the performance of this kind of sensing instrument.Typical atomic air chamber adopts opticglass to be encapsulated in vacuum or atmosphere of inert gases by the alkali metal atom such as rubidium, caesium, and the rare gas element being filled with certain pressure is as working gas and buffer gas.
In atomic air chamber, while atom obtains spin polarization(SP), also there is the macroscopic view spin loss process that atom causes with the collision of air chamber inwall.Atomic spin, from being polarised to loss during this period of time, is called macroscopical atomic spin relaxation time, is one of key parameter characterizing atomic air chamber performance, directly affects the performance of atom sensing instrument.
Carrying out anti-relaxation plated film at atomic air chamber inwall is a kind of effective means increasing macroscopical atomic spin relaxation time, and wherein the relaxation time of atom can be promoted more than 10 times by the anti-relaxation film such as rubidium hydride and deuterate rubidium.1981, the people such as T.M.Kwon were filled with three kinds of rare gas elementes (Xe, N in rubidium atomic air chamber
2and He) and pressure be the H of 10Torr
2, and this air chamber is toasted two weeks at 80 DEG C, plate the uniform RbH film of one deck at air chamber inwall.Test shows, compares the atomic air chamber not plating RbH film, and this air chamber has higher atomic polarizability and spin relaxation time.1984, A.T.Nicol carried out RbH plated film to atomic air chamber, made atomic spin relaxation time be promoted to 403s by 32s.2012, the people such as ScottRohrbaugh were filled with H in atomic air chamber
2and D
2, define uniform RbH and RbD film at air chamber inwall, effectively increase atomic spin relaxation time.
In above-mentioned open report, RbH anti-relaxation plated film all adopts following process implementation: first adopt High Pressure Hydrogen gas cylinder in atomic air chamber, be filled with the H of certain pressure intensity as hydrogen source
2, then atomic air chamber is sealed, at 80 DEG C, toasts about two weeks, the uniform RbH film of one deck can be plated at air chamber inwall.Mainly there is following problem in above process, one is RbH plated film is formed after atomic air chamber sealing, and because this process atomic air chamber is in sealed state, along with the generation of RbH film, in atomic air chamber, the amount of free rubidium atom reduces, simultaneously H in air chamber
2gas pressure intensity changes, and therefore along with the passing of baking time, atomic air chamber performance can change, and increases the non-controllable risk in atomic air chamber preparation; In addition, owing to adopting high pressure hydrogen as hydrogen source in coating process, therefore there is larger danger in above-mentioned coating process.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation is provided, the method increase the process safety of carrying out rubidium hydride plated film at atomic air chamber inwall, be conducive to the stability promoting atomic air chamber performance, improve the film quality of atomic air chamber inwall plated film simultaneously.
Above-mentioned purpose of the present invention is mainly achieved by following technical solution:
Slow down an atomic air chamber inwall film coating method for atomic spin relaxation, specifically comprise the steps:
(1), by N number of atomic air chamber be connected on supervisor by the first pipeline, and be interconnected by supervisor, wherein N is positive integer;
(2), by the first container holding rubidium source be connected on supervisor by the second pipeline, and be communicated with supervisor;
(3), by the second container holding the solid-state bubble release agent of hydride be connected on supervisor by the 3rd pipeline, and be communicated with supervisor;
(4), by supervisor be connected in vacuum system, utilize vacuum pump to vacuumize whole pipeline, be less than 5 × 10 to pressure
-4pa;
(5), heat the first container holding rubidium source, make rubidium source be diffused in each atomic air chamber as a vapor;
(6), the second container holding the solid-state bubble release agent of hydride is heated, described Heating temperature is 650 DEG C ~ 720 DEG C, described hydride is slowly decomposed, the hydrogen produced is filled with in each atomic air chamber by supervisor, when hydrogen pressure in air chamber reaches air pressure P, close the 3rd pipeline, make hydrogen no longer enter supervisor, described air pressure P is 10Torr ~ 100Torr;
(7), by atomic air chamber hold-time t under temperature T; Described temperature T is 50 DEG C ~ 150 DEG C, and time t is 60h ~ 300h;
(8), utilize vacuum pump to be found time by hydrogen remaining in atomic air chamber, complete atomic air chamber inwall plated film.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, in step (6) Atom air chamber, hydrogen gas pressure P is 40Torr ~ 80Torr.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, in step (6), hydride is 5min ~ 10min by slowly decomposing to the time of decomposing stagnation.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, in step (7), temperature T is 80 DEG C ~ 100 DEG C, and time t is 120h ~ 180h.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, the caliber of the first pipeline is 2mm ~ 4mm; The caliber of the second pipeline is 6mm ~ 10mm; The caliber of the 3rd pipeline is 6mm ~ 10mm;
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, supervisor, the first pipeline, the second pipeline, the 3rd pipeline, the first container and second container are glass material, preferably adopt the glass material of same type.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, the Heating temperature in step (5) is 200 DEG C ~ 220 DEG C.
Slow down in the atomic air chamber inwall film coating method of atomic spin relaxation above-mentioned, the thickness of step (8) Atom air chamber inwall plated film is 100nm ~ 300nm.
The present invention compared with prior art has following beneficial effect:
(1), the present invention adopts solid-state bubble release agent to produce hydrogen and realizes rubidium hydride plated film at atomic air chamber inwall, adopt High Pressure Hydrogen gas cylinder as compared with hydrogen source, improve the process safety of carrying out rubidium hydride plated film at atomic air chamber inwall with tradition;
(2), the rubidium hydride film coating apparatus that the present invention adopts does not need atomic air chamber all to seal when plated film after, take away separately and toast, only need air pressure reach necessarily require time, the 3rd line seal holding the second container of the solid-state bubble release agent of hydride will be communicated with, the pipeline being communicated with atomic air chamber does not need sealing, after rubidium hydride plated film, hydrogen remaining in air chamber is found time, with in existing method directly by hydrogen seal compared with in air chamber, the generation due to RbH is there will not be to cause gas pressure intensity in the minimizing of the amount of free rubidium atom in atomic air chamber and air chamber to change, be conducive to the stability promoting atomic air chamber performance,
(3), the present invention gives the optimum temperature range heated the second container holding the solid-state bubble release agent of hydride by lot of experiments, and the hydride decomposition speed of the best, the best air pressure range that when giving closed 3rd pipeline, in air chamber, hydrogen reaches simultaneously, ensure that homogeneity and the thickness of coating of RbH coating;
(4), the present invention is by being optimized the connecting pipeline size of atomic air chamber inwall film coating apparatus and coating process condition, improve the stability of atomic air chamber performance further, improve the film quality of atomic air chamber inwall plated film, add macroscopical atomic spin relaxation time.
Accompanying drawing explanation
Fig. 1 is that the present invention is for realizing the composition schematic diagram of the device of rubidium hydride plated film at atomic air chamber inwall.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Be illustrated in figure 1 the present invention for realizing the composition schematic diagram of the device of rubidium hydride plated film at atomic air chamber inwall, the present invention is used for the device realizing rubidium hydride plated film at atomic air chamber inwall, comprise N number of atomic air chamber 3, supervisor the 1, first container 2, second container 4, first pipeline 5, second pipeline 6, the 3rd pipeline 7, be wherein responsible for 1, N number of atomic air chamber 3, first pipeline 5, second pipeline 6, the 3rd pipeline 7, first container 2 and second container 4 be glass material.Glass supervisor is a hollow glass pipe, N number of atomic air chamber branch 3, the Glass Containers 2 holding Alkali Metal Rb source adopt with the Glass Containers 4 holding solid bubble release agent the glass material being responsible for 1 identical type with glass, are all responsible for welding by glass tubule with glass and are communicated with; Glass supervisor 1 is connected with external vacuum system, and vacuum pump can be utilized to vacuumize glass supervisor 1.
The present invention slows down the atomic air chamber inwall film coating method of atomic spin relaxation, specifically comprises the steps:
(1), clean N number of atomic air chamber 3 glass bulb and dry, being then responsible on 1 at glass by the first pipeline 5 (glass tubule) welding, and being interconnected by glass supervisor 1; N is positive integer.
(2), by rubidium source hold in second container 2 (Glass Containers), by the second pipeline 6 (glass tubule) welding on glass supervisor 1, and be responsible for 1 with glass and be communicated with;
(3), by solid-state for hydride bubble release agent hold in second container 4 (Glass Containers), by the 3rd pipeline 7 (glass tubule) welding on glass supervisor 1, and be responsible for 1 with glass and be communicated with; Wherein the solid-state bubble release agent of hydride can be titanium hydride, hydrolith etc.
(4), glass supervisor 1 is connected in vacuum system, utilizes vacuum pump to vacuumize whole pipeline, be less than 5 × 10 to pressure
-4pa;
(5), utilize the heating of the method for distillation to hold first container 2 in rubidium source, make rubidium source be diffused in each atomic air chamber 3 as a vapor, Heating temperature is 200 DEG C ~ 220 DEG C.
(6), to the second container 4 holding the solid-state bubble release agent of hydride heat, Heating temperature is 650 DEG C ~ 720 DEG C; Described hydride is slowly decomposed, decomposition course continues 5min ~ 10min, the hydrogen produced is filled with in each atomic air chamber 3 by supervisor 1, when hydrogen pressure in air chamber reaches air pressure P, close the 3rd pipeline 7, make hydrogen no longer enter supervisor 1, air pressure P is 10Torr ~ 100Torr, and preferred air pressure P is 40Torr ~ 80Torr.
(7), atomic air chamber 3 is kept certain hour t under certain temperature T; Temperature T is 50 DEG C ~ 150 DEG C, and time t is 60h ~ 300h; Preferable temperature T is 80 DEG C ~ 100 DEG C, and time t is 120h ~ 180h.
(8), utilize vacuum pump to be found time by hydrogen remaining in atomic air chamber 3, complete atomic air chamber 3 inwall plated film, the thickness of atomic air chamber (3) inwall plated film is 100nm ~ 300nm.
The caliber of above-mentioned first pipeline 5 is 2mm ~ 4mm; The diameter caliber of the second pipeline 6 is 6mm ~ 10mm; The caliber of the 3rd pipeline 7 is 6mm ~ 10mm.
Embodiment 1
First clean 6 atomic air chamber 3 glass bulbs and dry, be then responsible on 1 at glass by the welding of 6 glass tubules 5, the caliber of glass tubule 5 is 2.5mm, and the caliber of glass supervisor 1 is 20mm.Hold in Glass Containers 2 by 10mg rubidium source, by glass tubule 6 welding on glass supervisor 1, the caliber of glass tubule 6 is 8mm.Held by 500mg titanium hydride in Glass Containers 4, by glass tubule 7 welding on glass supervisor 1, the caliber of glass tubule 7 is 8mm.
Glass supervisor 1 is connected in vacuum system, utilizes vacuum pump to vacuumize whole pipeline, to pressure 3 × 10
-4pa; Utilize the heating of the method for distillation to hold the Glass Containers 2 in rubidium source, make rubidium source be diffused in each atomic air chamber 3 as a vapor; Heating temperature is 220 DEG C.
Heat the Glass Containers 4 holding the solid-state bubble release agent of hydride, Heating temperature is 680 DEG C; Hydride is slowly decomposed, decomposition course continues 6min, the hydrogen produced is filled with in each atomic air chamber 3 by supervisor 1, when hydrogen pressure in air chamber reaches air pressure P, close the 3rd pipeline 7, make hydrogen no longer enter supervisor 1, air pressure P is 75Torr, and atomic air chamber 3 is kept 150h at temperature 90 DEG C.
Utilize vacuum pump to be found time by hydrogen remaining in atomic air chamber 3, complete atomic air chamber 3 inwall plated film, the thickness of atomic air chamber 3 inwall plated film is 150nm.
Utilize method described in the present embodiment after 5mm × 5mm × 5mm square atomic air chamber inwall carries out anti-relaxation plated film, in atomic air chamber
129macroscopical atomic spin relaxation time of Xe intert-gas atoms, improves an order of magnitude than non-plated film atomic air chamber.
The above; be only the present invention's embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.
The content be not described in detail in specification sheets of the present invention belongs to the known technology of professional and technical personnel in the field.
Claims (8)
1. slow down an atomic air chamber inwall film coating method for atomic spin relaxation, it is characterized in that: specifically comprise the steps:
(1), by N number of atomic air chamber (3) be connected on supervisor (1) by the first pipeline (5), and be interconnected by supervisor (1), wherein N is positive integer;
(2), by the first container (2) holding rubidium source be connected on supervisor (1) by the second pipeline (6), and be communicated with supervisor (1);
(3), by the second container (4) holding the solid-state bubble release agent of hydride be connected on supervisor (1) by the 3rd pipeline (7), and be communicated with supervisor (1);
(4), (1) will be responsible for be connected in vacuum system, and utilize vacuum pump to vacuumize whole pipeline, be less than 5 × 10 to pressure
-4pa;
(5), heat the first container (2) holding rubidium source, make rubidium source be diffused in each atomic air chamber (3) as a vapor;
(6), the second container (4) holding the solid-state bubble release agent of hydride is heated, described Heating temperature is 650 DEG C ~ 720 DEG C, described hydride is slowly decomposed, the hydrogen produced is filled with in each atomic air chamber (3) by supervisor (1), when hydrogen pressure in air chamber reaches air pressure P, close the 3rd pipeline (7), make hydrogen no longer enter supervisor (1), described air pressure P is 10Torr ~ 100Torr;
(7), by atomic air chamber (3) hold-time t under temperature T; Described temperature T is 50 DEG C ~ 150 DEG C, and time t is 60h ~ 300h;
(8), utilize vacuum pump to be found time by hydrogen remaining in atomic air chamber (3), complete atomic air chamber (3) inwall plated film.
2. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: described step (6) Atom air chamber (3) interior hydrogen gas pressure P is 40Torr ~ 80Torr.
3. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: in described step (6), hydride is 5min ~ 10min by slowly decomposing to the time of decomposing stagnation.
4. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: in described step (7), temperature T is 80 DEG C ~ 100 DEG C, and time t is 120h ~ 180h.
5. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: the caliber of described first pipeline (5) is 2mm ~ 4mm; The caliber of the second pipeline (6) is 6mm ~ 10mm; The caliber of the 3rd pipeline (7) is 6mm ~ 10mm.
6. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, it is characterized in that: described supervisor (1), the first pipeline (5), the second pipeline (6), the 3rd pipeline (7), the first container (2) and second container (4) are glass material, preferably adopt the glass material of same type.
7. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: the Heating temperature in described step (5) is 200 DEG C ~ 220 DEG C.
8. a kind of atomic air chamber inwall film coating method slowing down atomic spin relaxation according to claim 1, is characterized in that: the thickness of described step (8) Atom air chamber (3) inwall plated film is 100nm ~ 300nm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106746719A (en) * | 2016-11-22 | 2017-05-31 | 中国人民解放军国防科学技术大学 | A kind of composite construction film layer and plating method for extending the magnetometer relaxation time |
| CN110261671A (en) * | 2019-07-15 | 2019-09-20 | 中国计量科学研究院 | A kind of microwave power quantum measurement method and vacuum cavity measuring device |
| CN110274472A (en) * | 2019-01-23 | 2019-09-24 | 北京大学 | It is a kind of for extending the plated film alkali metal atom air chamber aging system and application method of atomic spin relaxation life |
| CN110320479A (en) * | 2019-05-17 | 2019-10-11 | 北京航空航天大学 | A kind of cube shaped alkali metal gas chamber of double tail pipes convenient for cleaning |
| CN110948107A (en) * | 2019-12-12 | 2020-04-03 | 北京航天控制仪器研究所 | Atomic gas chamber fusion sealing device and method |
| CN111060088A (en) * | 2019-12-12 | 2020-04-24 | 北京航天控制仪器研究所 | High-pressure atomic gas chamber manufacturing system and method |
| CN111058013A (en) * | 2018-10-17 | 2020-04-24 | 北京自动化控制设备研究所 | Micro-miniature coating atomic air chamber packaging process |
| CN112595241A (en) * | 2020-11-03 | 2021-04-02 | 北京航天控制仪器研究所 | Method for measuring thickness of rubidium hydride anti-relaxation film layer on inner wall of atomic gas chamber |
| CN114527636A (en) * | 2022-02-18 | 2022-05-24 | 安徽感知未来电子科技有限公司 | Atomic clock atomic air chamber inflation method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106746719A (en) * | 2016-11-22 | 2017-05-31 | 中国人民解放军国防科学技术大学 | A kind of composite construction film layer and plating method for extending the magnetometer relaxation time |
| CN111058013A (en) * | 2018-10-17 | 2020-04-24 | 北京自动化控制设备研究所 | Micro-miniature coating atomic air chamber packaging process |
| CN111058013B (en) * | 2018-10-17 | 2022-07-15 | 北京自动化控制设备研究所 | Micro-miniature coating atomic air chamber packaging process |
| CN110274472A (en) * | 2019-01-23 | 2019-09-24 | 北京大学 | It is a kind of for extending the plated film alkali metal atom air chamber aging system and application method of atomic spin relaxation life |
| CN110320479A (en) * | 2019-05-17 | 2019-10-11 | 北京航空航天大学 | A kind of cube shaped alkali metal gas chamber of double tail pipes convenient for cleaning |
| CN110261671A (en) * | 2019-07-15 | 2019-09-20 | 中国计量科学研究院 | A kind of microwave power quantum measurement method and vacuum cavity measuring device |
| CN110261671B (en) * | 2019-07-15 | 2021-07-27 | 中国计量科学研究院 | Microwave power quantum measurement method and vacuum cavity measurement device |
| CN110948107A (en) * | 2019-12-12 | 2020-04-03 | 北京航天控制仪器研究所 | Atomic gas chamber fusion sealing device and method |
| CN111060088A (en) * | 2019-12-12 | 2020-04-24 | 北京航天控制仪器研究所 | High-pressure atomic gas chamber manufacturing system and method |
| CN111060088B (en) * | 2019-12-12 | 2022-02-01 | 北京航天控制仪器研究所 | High-pressure atomic gas chamber manufacturing system and method |
| CN112595241A (en) * | 2020-11-03 | 2021-04-02 | 北京航天控制仪器研究所 | Method for measuring thickness of rubidium hydride anti-relaxation film layer on inner wall of atomic gas chamber |
| CN114527636A (en) * | 2022-02-18 | 2022-05-24 | 安徽感知未来电子科技有限公司 | Atomic clock atomic air chamber inflation method |
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