CN105242341A - Super surface quarter wave plate based on surface plasmon polariton - Google Patents
Super surface quarter wave plate based on surface plasmon polariton Download PDFInfo
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Abstract
The invention discloses a super surface quarter wave plate based on surface plasmon polariton. The wave plate comprises a rectangular base and a silver film which is arranged on the rectangular base. The silver film is composed of multiple periodic aperture units which are arranged in matrixes. Each aperture unit is provided with two transverse apertures which are centrally symmetrical in a vertical direction and two longitudinal apertures which are centrally symmetrical in a left-and-right direction. The extension line of the internal side of the transverse apertures has no intersection point with the longitudinal apertures. The extension line of the internal side of the longitudinal apertures has no intersection point with the transverse apertures. The super surface quarter wave plate based on the surface plasmon polariton has advantages of being simple in structure, easy to integrate, low in thickness and low in processing difficulty so that the super surface quarter wave plate based on the surface plasmon polariton has great application value in an optical sensing system, an advanced nano-photonic device and an integrated optical system.
Description
Technical field
The present invention relates to a kind of super surperficial quarter-wave plate based on surface plasmons, belong to optical element technology field.
Background technology
In prior art, in the research and apply field of light, it is vital for controlling polarisation of light state, mainly contains two kinds of methods at present to the optical control of nanometer scale.First method is based on photonic crystal, optical transmission path is regulated and controled by the inner structure controlling photonic crystal, thus realize transmission, the modulation and light network etc. of optical information, as nanometer microcavity, optical waveguide, light-splitting device etc., but current photonic crystal is nearly all three-dimensional structure, has very large difficulty for its design and preparation.Second method is the propagation of control surface plasmon (SPP), and surface plasma excimer results from metal and dielectric surface, and being the mixed activation state caused by free electron resonance of light and metal surface, is also a kind of electromagnetic wave.Utilize surface plasma excimer can reduce to two dimension by the control of optics from three-dimensional, thus more easily, effectively regulate and control super diffraction limit optical information propagation, simultaneously realize electromagnetic energy near field regional area to amplify, there is important application in the fields such as, nano-photoetching integrated at sub-wavelength structure nano-photon device layout.
Within 2011, Khoo and Zhao proposes mutually orthogonal slit-type structure, the mutually perpendicular rectangular slot of design cycle property on metallic film, by the length of control rectangle slit, width, thickness and arrangement mode, can realize transmitted light along the amplitude in two slit direction and position mutually adjustable, achieve on target wavelength (800 nanometers and 650 nanometers) pairwise orthogonal direction, place
, namely achieve optics quarter-wave plate function.The people such as Roberts in 2012 propose cross mechanism, namely utilize the argent film with sub-wavelength cross-shaped configuration pattern.By the cross physical dimension of the true iron of regulating cycle, the function of quarter-wave plate can be realized near infrared certain wave strong point.In addition, 2011, the people such as Baida proposed the method for designing that a kind of metallic film by being embedded with sub-wavelength double patterning realizes anisotropic material wave plate.The thickness of metallic film is the key parameter determining phasic difference on pairwise orthogonal direction, thus achieves quarter-wave plate and half-wave plate function.As quarter-wave plate, conversion efficiency and service band scope are two key factors characterizing its characteristic.Above-mentioned research is studied for polarization converted efficiency mostly, but fail to take into account the characteristic of service band, or service band is narrower.
Chinese Patent Application No. 2012105755070 discloses a kind of sub-wavelength straight-flanked ring array quarter wave plate, but the straight-flanked ring structure of this design still also exists a problem, namely too high depth-to-width ratio, the degree of depth reaches 200 nanometers, most crack is wide only less than 50 nanometers, depth-to-width ratio is at more than 4:1, and this brings great difficulty to processing and fabricating, is almost difficult to realize with current manufacturing process.
In view of this, develop a kind of new quarter-wave plate, solve the aforesaid drawbacks and obviously there is positive realistic meaning.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of super surperficial quarter-wave plate based on surface plasmons, solves that existing thickness is large, difficult processing and the narrow problem of wave band.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of super surperficial quarter-wave plate based on surface plasmons, described wave plate comprises rectangular base and is arranged on the silverskin in rectangular base, described silverskin is arranged by some periodic aperture unit matrixes and forms, each described aperture unit is equipped with about two centrosymmetric horizontal apertures and about two centrosymmetric longitudinal apertures, the extended line of the inner edge of described horizontal aperture does not have intersection point with longitudinal aperture, and the extended line of the inner edge of described longitudinal aperture does not have intersection point with horizontal aperture;
The scope of the length dx of described horizontal aperture is 150 ~ 170nm, the scope of width wy is 50 ~ 70nm, the scope of the length dy of described longitudinal aperture is 150 ~ 250nm, the scope of width wx is 110 ~ 130nm, the thickness h of described silverskin is 50 ~ 140nm, and the scope of the center distance P between adjacent described aperture unit is 530 ~ 570nm.
Preferably, the operating wavelength range of the described super surperficial quarter-wave plate based on surface plasmons is 1400 ~ 1700nm.
Preferably, described rectangular base is rectangle SiO
2substrate.
In further technical scheme, the operation wavelength of the described super surperficial quarter-wave plate based on surface plasmons is 1550nm.
Design concept of the present invention is as follows: by engineer and a making discontinuous phase place along interface, people can manipulate and the abnormal refraction realized described by broad sense Si Nieer (Snell) law and reflection completely:
In formula
be respectively refraction angle, incident angle and reflection angle;
represent that two media is in transmission face and the refractive index of the plane of incidence respectively,
for vacuum wavelength.These formula show the gradual change along the discontinuous phase place in a certain interface
refraction and the direction of reflected light can be changed, and be a very thin interface realization.
Can decay rapidly when light beam enters metal interface from medium, but can propagate on medium and metal interfaces, namely the surface plasma-wave (SPs) inspired, this is a kind of electromagnetic surface wave, it is maximum in surface field intensity, be exponential evanescent field perpendicular to direction, interface, it also can be excited by light wave by electronics.Adopt linearly polarized light to irradiate the present invention, light beam polarization direction and X-axis are at 45 °, and up incidence below wave plate, the transmitance of result display beams has a peak value, i.e. local surface plasma resonance peak (LSPP).The resonant cavity excited at this peak value place can produce different impacts to the optical property of light beam.
Because technique scheme is used, the present invention compared with prior art has following advantages:
The super surperficial quarter-wave plate that the present invention is based on surface plasmons have structure simple, be easy to integrated, the advantage such as thickness is thin, difficulty of processing is little, wide waveband, in optical sensor system, advanced nano-photon device and integrated optics system, there is very large using value.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of the embodiment of the present invention one aperture unit;
Fig. 3 is the vertical view of Fig. 2;
Fig. 4 is that adjacent apertures unit center distance of the present invention is to the influence curve schematic diagram of transmitted spectrum;
Fig. 5 is that adjacent apertures unit center distance of the present invention is to the influence curve schematic diagram of transmitance;
Fig. 6 is the influence curve schematic diagram of change to transmitted spectrum of horizontal aperture length of the present invention;
Fig. 7 is the influence curve schematic diagram of change to transmitance of horizontal aperture length of the present invention;
Fig. 8 is the influence curve schematic diagram of change to transmitted spectrum of longitudinal aperture length of the present invention;
Fig. 9 is the influence curve schematic diagram of change to transmitance of longitudinal aperture length of the present invention;
Figure 10 is the influence curve schematic diagram of change to transmitted spectrum of longitudinal aperture width of the present invention;
Figure 11 is the influence curve schematic diagram ` of change to transmitance of longitudinal aperture width of the present invention;
Figure 12 is the influence curve schematic diagram of change to transmitted spectrum of horizontal aperture width of the present invention;
Figure 13 is the influence curve schematic diagram of change to transmitance of horizontal aperture width of the present invention;
Figure 14 is the influence curve schematic diagram of change to transmitted spectrum of silver film thickness of the present invention;
Figure 15 is the influence curve schematic diagram of change to transmitance of embodiment one silver film thickness;
Figure 16 is embodiment one position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 17 is the curve synoptic diagram of embodiment one transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm.
Figure 18 is embodiment two position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 19 is the curve synoptic diagram of embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 20 is embodiment three position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 21 is the curve synoptic diagram of embodiment three transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 22 is embodiment four position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 23 is the curve synoptic diagram of embodiment four transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 24 is embodiment five position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 25 is the curve synoptic diagram of embodiment five transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 26 is embodiment six position of X-direction and Y-direction and curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 27 is the curve synoptic diagram of embodiment six transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm;
Figure 28 is the structural representation of embodiment six aperture unit.
Wherein: 1, horizontal aperture; 2, longitudinal aperture; 3, silverskin; 4, rectangular base.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment one: shown in Figure 1, a kind of super surperficial quarter-wave plate based on surface plasmons, wave plate comprises rectangular base and is arranged on the silverskin in rectangular base, silverskin is arranged by some periodic aperture unit matrixes and forms, each aperture unit is equipped with about two centrosymmetric horizontal apertures and about two centrosymmetric longitudinal apertures, the extended line of the inner edge of horizontal aperture does not have intersection point with longitudinal aperture, and the extended line of the inner edge of longitudinal aperture does not have intersection point with horizontal aperture.
As shown in Figure 2 and Figure 3, aperture unit basic structure comprises silverskin with aperture and corresponding substrate, and the center distance between adjacent apertures unit is P, and namely the cycle of aperture unit also can represent with P, and namely the length of side of aperture unit is P.
Operation wavelength of the present invention is 1400nm to 1700nm.
In the present embodiment, rectangular base is rectangle SiO
2substrate.
Shown in Figure 4, for adjacent apertures unit center distance is to the influence curve schematic diagram of transmitted spectrum, namely aperture unit length of side P is to the influence curve schematic diagram of transmitted spectrum, the wherein length dx=160nm of horizontal aperture, width wy=60nm, the length dy=200nm of longitudinal aperture, width wx=120nm, as array element cycle P=550nm, the length dx=160nm of horizontal aperture, width wy=60nm, the length dy=200nm of longitudinal aperture, during width wx=120nm, corresponding resonant wavelength λ=1555.5nm, corresponding phasic difference is 1.43, shown in Figure 5, the transmitance T=0.508 of its correspondence.As can be seen from Figure 4, along with the increase of cycle P, resonant wavelength nonlinearities change, but skew is very little, substantially remains unchanged, phasic difference increases gradually, see Fig. 5, for adjacent apertures unit center distance is to the influence curve schematic diagram of transmissivity, can find, along with the increase of P, transmitance T reduces gradually.
Shown in Figure 6, for the change of horizontal aperture length dx is to the influence curve schematic diagram of transmitted spectrum, fixing dy=200nm, h=70nm, p=550nm, wx=120nm, wy=60nm are constant.Find out that, along with dx constantly increases, resonant wavelength λ moves to right, and phasic difference reduces gradually, shown in Figure 7, for the change of horizontal aperture length is to the influence curve schematic diagram of transmitance, find out, along with the increase of dx, transmitance T increases.
Shown in Figure 8, for the change of longitudinal aperture length is to the influence curve schematic diagram of transmitted spectrum, Fig. 9 is the influence curve schematic diagram of change to transmitance of longitudinal aperture length.Fixing Dx=160nm, h=70nm, Px=550nm, Py=550nm, Wx=120nm, Wy=60nm, can find out that from Fig. 8, Fig. 9 resonant wavelength λ moves to right obviously, and all not remarkable on the impact of phasic difference and transmitance when dy increases.
Shown in Figure 10, for the change of longitudinal aperture width is to the influence curve schematic diagram of transmitted spectrum, Figure 11 is the influence curve schematic diagram of change to transmitance of longitudinal aperture width, fixing dx=160nm, dy=200nm, h=70nm, P=500nm, Wy=60nm.As can be seen from Figure 10, Figure 11, when Wx increases, resonant wavelength λ moves to right, and phasic difference increases, and transmitance T declines, and can find that the change of Wx is comparatively large on the impact of phasic difference, less on the impact of resonant wavelength λ and transmitance T.
Shown in Figure 12, for the change of horizontal aperture width is to the influence curve schematic diagram of transmitted spectrum, Figure 13 is the influence curve schematic diagram of change to transmitance of horizontal aperture width, wherein dx=160nm, dy=200nm, h=70nm, P=550, Wx=120nm.As can be seen from Figure 12, Figure 13, the change of Wy is on the equal highly significant of impact of resonant wavelength and phasic difference, less on transmitance impact, and when Wy increases to certain numerical value, the disappearance of resonance intersection point.
Shown in Figure 14, for the change of silver film thickness is to the influence curve schematic diagram of transmitted spectrum, Figure 15 is the influence curve schematic diagram of change to transmitance of silver film thickness, wherein dx=160nm, dy=200nm, P=550nm, Wy=60nm, Wx=120nm.As can be seen from Figure 14, Figure 15, along with the increase of h, resonant wavelength λ offsets, but skew is less, substantially remains unchanged; Phasic difference increases gradually; Transmitance reduces gradually.
More than illustrate the impact that parameters produces the present invention in test, calculate finally by through optimizing, Selecting All Parameters is dx=165nm, dy=190nm, P=550nm, Wx=120nm, Wy=60nm, the polarizer of h=68nm is tested, and depth-to-width ratio maximum is 1.13, and its test result is as shown in Figure 16, Figure 17.Figure 16 is the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, the bit phase delay of X-direction is 0.964, y direction bit phase delay is 2.487, two direction phasic differences are 2.49-0.96=1.53, phasic difference approximates 1/2 π, that is, this structure may be used for the quarter-wave plate that wavelength is 1550nm.Shown in Figure 17, the curve synoptic diagram of transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, when getting wavelength X=1550nm, its transmitance T is 0.387.
Embodiment two: the parameter chosen in the present embodiment is dx=165nm, dy=190nm, P=550nm, Wx=120nm, Wy=60nm, h=50nm, depth-to-width ratio maximum is 0.83, shown in Figure 18, the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, can calculate when wavelength X=1550nm, phasic difference is 1.472, shown in Figure 19, for the curve synoptic diagram of the present embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, find out when getting transmitted light wavelength X=1550nm, transmitance T is 0.412.
Embodiment three: the parameter chosen in the present embodiment is dx=155nm, dy=200nm, P=550nm, Wx=120nm, Wy=60nm, h=68nm, depth-to-width ratio maximum is 1.13, shown in Figure 20, the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, can calculate when wavelength X=1550nm, phasic difference is 1.601, ginseng as shown in Figure 21, for the curve synoptic diagram of the present embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, find out when getting transmitted light wavelength X=1550nm, transmitance T is 0.354.
Embodiment four: the parameter chosen in the present embodiment is dx=165nm, dy=190nm, P=550nm, Wx=110nm, Wy=70nm, h=68nm, depth-to-width ratio maximum is 0.97, ginseng as shown in Figure 22, the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, can calculate when wavelength X=1550nm, phasic difference is 1.348, ginseng as shown in Figure 23, for the curve synoptic diagram of the present embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, find out when getting transmitted light wavelength X=1550nm, transmitance T is 0.449.
Embodiment five: the parameter chosen in the present embodiment is dx=165nm, dy=190nm, P=570nm, Wx=120nm, Wy=60nm, h=68nm, depth-to-width ratio maximum is 1.13, ginseng as shown in Figure 24, the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, can calculate when wavelength X=1550nm, phasic difference is 1.572, ginseng as shown in Figure 25, for the curve synoptic diagram of the present embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, find out when getting transmitted light wavelength X=1550nm, transmitance T is 0.359.
Embodiment six: ginseng as shown in Figure 28, for the structural representation of the present embodiment, the parameter chosen in the present embodiment is dx=165nm, dy=190nm, Px=550nm, Py=550nm, Wx=120nm, Wy=60nm, h=68nm, depth-to-width ratio maximum is 1.13, ginseng as shown in Figure 26, the position of X-direction and Y-direction and the curve synoptic diagram of phasic difference under the irradiation of transmitted light wavelength 1400 ~ 1700nm, wherein solid line is the phasic difference of transmitted light X-direction component and Y-direction component, dotted line is the position phase of transmitted light Y-direction component, pecked line is the position phase of transmitted light X-direction component, can calculate when wavelength X=1550nm, phasic difference is 1.320, ginseng as shown in Figure 27, for the curve synoptic diagram of the present embodiment two transmitance under the irradiation of transmitted light wavelength 1400 ~ 1700nm, find out when getting transmitted light wavelength X=1550nm, transmitance T is 0.398.
Claims (4)
1. the super surperficial quarter-wave plate based on surface plasmons, it is characterized in that: described wave plate comprises rectangular base (4) and is arranged on the silverskin (3) in rectangular base, described silverskin (3) is arranged by some periodic aperture unit matrixes and forms, each described aperture unit is equipped with about two centrosymmetric horizontal apertures (1) and about two centrosymmetric longitudinal apertures (2), the extended line of the inner edge of described horizontal aperture (1) does not have intersection point with longitudinal aperture, the extended line of the inner edge of described longitudinal aperture (2) does not have intersection point with horizontal aperture,
The scope of the length dx of described horizontal aperture (1) is 150 ~ 170nm, the scope of width wy is 50 ~ 70nm, the scope of the length dy of described longitudinal aperture (2) is 150 ~ 250nm, the scope of width wx is 110 ~ 130nm, the thickness h of described silverskin (3) is 50 ~ 70nm, and the scope of the center distance P between adjacent described aperture unit is 530 ~ 570nm.
2. the super surperficial quarter-wave plate based on surface plasmons according to claim 1, is characterized in that: the operating wavelength range of the described super surperficial quarter-wave plate based on surface plasmons is 1400 ~ 1700nm.
3. the super surperficial quarter-wave plate based on surface plasmons according to claim 1, is characterized in that: described rectangular base (4) is rectangle SiO
2substrate.
4. the super surperficial quarter-wave plate based on surface plasmons according to claim 2, is characterized in that: the operation wavelength of the described super surperficial quarter-wave plate based on surface plasmons is 1550nm.
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| CN105629364A (en) * | 2016-03-31 | 2016-06-01 | 中国科学院光电技术研究所 | Wavelength selection type super surface device |
| CN105698677A (en) * | 2016-02-06 | 2016-06-22 | 厦门大学 | Surface Plasmon-based four quadrant detector |
| CN106094093A (en) * | 2016-08-18 | 2016-11-09 | 苏州大学 | A kind of sub-wavelength ultra broadband transmission-type two-dimensional metallic wave plate |
| CN109901246A (en) * | 2019-03-07 | 2019-06-18 | 南京大学 | Multi-functional polarization based on three dimensional composite structure unit adjusts component |
| CN110568540A (en) * | 2019-08-13 | 2019-12-13 | 武汉大学 | micro-nano wave plate array with double-image display function and construction method thereof |
| CN112965158A (en) * | 2021-03-01 | 2021-06-15 | 南京航空航天大学 | Method for realizing unidirectional enhancement of photon spin Hall effect displacement |
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| CN105698677A (en) * | 2016-02-06 | 2016-06-22 | 厦门大学 | Surface Plasmon-based four quadrant detector |
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| CN109901246B (en) * | 2019-03-07 | 2020-01-17 | 南京大学 | Multifunctional polarization adjusting component based on three-dimensional composite structure unit |
| CN110568540A (en) * | 2019-08-13 | 2019-12-13 | 武汉大学 | micro-nano wave plate array with double-image display function and construction method thereof |
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| CN112965158A (en) * | 2021-03-01 | 2021-06-15 | 南京航空航天大学 | Method for realizing unidirectional enhancement of photon spin Hall effect displacement |
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