CN105225924A - A kind of method removing crystal column surface particle - Google Patents
A kind of method removing crystal column surface particle Download PDFInfo
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- CN105225924A CN105225924A CN201410273539.4A CN201410273539A CN105225924A CN 105225924 A CN105225924 A CN 105225924A CN 201410273539 A CN201410273539 A CN 201410273539A CN 105225924 A CN105225924 A CN 105225924A
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- crystal column
- wafer
- column surface
- dielectric film
- surface particle
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Abstract
The invention discloses a kind of method removing crystal column surface particle.Comprise the steps, step one: provide a wafer to be cleaned, the surface coverage of described wafer has dielectric film, is stained with some particles in described dielectric film; Step 2: remove certain thickness described dielectric film by wet etching; Step 3: cleaned removing certain thickness described dielectric film surface by brushing piece technique.Adopting this kind of mode, can first the dielectric film on wafer being removed, for reducing the adhesion of surface particles and wafer, again brushing piece process is done to wafer, remove crystal column surface particle completely, reduce the defect of crystal column surface, and cleaning process is simple, cost is low, wafer qualification rate is high.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, particularly relate to a kind of method removing crystal column surface particle.
Background technology
Along with the development of semiconductor industry, semiconductor fabrication process enters nanometer era, does less and less, the trend that function is done stronger and stronger to adapt to every electronic product.And do stronger and stronger along with chip functions, the trend that element does less and less and come, be more and more higher to the technical requirement of different link various in technique.Because element is more and more less, and internal wiring does more complicated and more complicated, makes in technique more responsive to the slight change of parameters, original admissible process conditions error, after component size significantly reduces, may cause great impact to the performance of element.Therefore, for reaching good element function, increasingly rigorous to the requirement of the cleannes of semiconductor, micropollution impurity also can cause the inefficacy of semiconductor device.Pollute impurity and be mainly divided into Organic Pollution and inorganic pollution two kinds, Organic Pollution comprises photoresist, organic solvent residual thing, grease, fiber etc., inorganic pollution is divided into heavy metal pollution, alkali metal pollutes, have a strong impact on minority carrier lifetime and surface conductance, cause serious drain and other various defect simultaneously.
Surface particles refers to introduces any harm microchip rate of finished products of wafer and the undesirable material of electric property in wafer manufacturing process.Described surface particles includes but not limited to particle, metal impurities, Organic Pollution and oxide, the wisp that can stick to crystal column surface, photoresist and etching impurity etc.
The method of conventional removing surface particles generally has two kinds: one is physical cleaning method, and another kind is chemical cleaning method.Physical cleaning scrubs or cleans, and scrubbed by brushing machine, and remove the particle contamination of silicon chip surface, chemical cleaning utilizes standard cleaning liquid 1, and namely the mix reagent of ammoniacal liquor, hydrogen peroxide and water cleans.As shown in Figure 1, no matter be adopt physical cleaning or chemical cleaning, the blemish number of crystal column surface is all a lot, and generally more than 1000, defect is all surface particles.
Application number is the Chinese invention patent of 201010288080.7, discloses a kind of method for crystal column surface particle removal.Described method is by the process of the wafer in magazine by crystal column surface particle removal module, and this processing procedure is carried out when described wafer waits for other wafer-process in wafer transfer box.One wafer imports the bottom wafer bearing device of described crystal column surface particle removal module into, top CHARGE DISTRIBUTION device is set above crystal column surface, occurred by the electric charge in described crystal column surface particle removal module and the top CHARGE DISTRIBUTION device release electric charge of control device in described crystal column surface particle removal module, utilize the adsorption function of electrostatic by crystal column surface granular absorption to top CHARGE DISTRIBUTION device, described wafer is spread out of crystal column surface particle removal module, pass in wafer transfer box.Discharge the surface particles of adsorbing in described crystal column surface particle removal module.The production time that the present invention all increases is only that in a wafer transfer box, last wafer is by the time of crystal column surface particle removal module, and the adsorption rate of effects on surface particle is high, is conducive to improving yields, reduces costs.Known by above-mentioned public technology, the method that this patent application adopts is the surface particles utilizing Electrostatic Absorption wafer, because the absorption affinity of electrostatic is limited, the surface particles stronger to wafer outer film adhesion force, need the absorption electricity of electrostatic higher, then the cost of electrostatic adsorption device just improves thereupon, and adopts the complex structure of electrostatic adsorption device, is unfavorable for that industrialization is produced.
Application number is the Chinese invention patent of 201110391779.0, and a kind of method for cleaning wafer, is characterized in that, described method for cleaning wafer comprises the steps: the wafer with particle to be immersed in the cleaning fluid in rinse bath; And rotating wafer, simultaneously to the central-injection cleaning fluid of described wafer, thus utilize the drag force produced by described particle and described wafer separate, known by above disclosed technical scheme, the technology of this patent application is rotary spray method.But this method, for the stronger particle of adhesion, can not make it be separated with silicon chip, secondly because silicon chip this as more fragile product, the centrifugal force produced in rotation is larger, and the probability of wafer damage is also higher, affects the qualification rate of product; And rotary device structure is complicated, production cost is high.
Summary of the invention
In view of the above problems, the invention provides a kind of method removing crystal column surface particle, the method can effectively reduce surface particles defect, and the process units that enforcement the method utilizes industry conventional, without the need to any improvement, there is no extra cost, and wafer qualification rate is high.
Step one: provide a wafer to be cleaned, the surface coverage of described wafer has dielectric film, is stained with some particles in described dielectric film;
Step 2: remove certain thickness described dielectric film by wet etching;
Step 3: cleaned removing certain thickness described dielectric film surface by brushing piece technique.
As further preferred version, the etch period in step 2 of the present invention is 10s ~ 40s.
As further preferred version, the etching temperature in step 2 of the present invention is 20 DEG C ~ 30 DEG C.
As further preferred version, in step one of the present invention, the material of described dielectric film is silicon nitride, and surface particles contains the composition of silicon.
As further preferred version, in step 2 of the present invention, by the etch amount of dielectric film described in wet etching be
.
As further preferred version, in step 2 of the present invention, the solution of described wet etching is the mixed solution that hydrofluoric acid and solute contain HF.
As further preferred version, in step 2 of the present invention, the solution of described wet etching is HF and HNO
3mixed solution.
As further preferred version, in mixed solution of the present invention, described HF and HNO
3volume ratio be (1:25) ~ (1:50).
As further preferred version, in mixed solution of the present invention, described HF and HNO
3volume ratio be 1:35.
As further preferred version, in step 2 of the present invention, the solution of described wet etching is phosphoric acid.
Technique scheme tool has the following advantages or beneficial effect:
(1) method that the present invention removes surface particles is divided into two steps, first wafer to be cleaned is carried out wet etching, to remove part wafer dielectric film, brushing piece PROCESS FOR TREATMENT is carried out to the wafer crossed through wet etching treatment, for removing crystal column surface particle completely.Adopting this kind of mode, can first the dielectric film part on wafer being removed, for reducing the adhesion of surface particles and wafer, again brushing piece process is done to wafer, remove crystal column surface particle completely, reduce the defect of crystal column surface, and cleaning process is simple, cost is low, wafer qualification rate is high.
(2) the present invention adopts HF and HNO
3mixed solution, HF and HNO
3mixed solution is fast to the etch rate of silicon nitride, and does not affect other performance of wafer.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.
Fig. 1 is the wafer finished product schematic diagram that prior art is manufactured;
Fig. 2 is the process blocks of the inventive method;
Fig. 3 is the wafer finished product schematic diagram adopting the present invention to manufacture.
Embodiment
The invention provides a kind of method removing crystal column surface particle, can be applicable to technology node is in the technique of 65/55nm; Can be applicable in following technology platform: Logic, Memory, CIS, Flash, eFlash.
Core concept of the present invention is by the adhesion between wet etching reduction surface particles and wafer, thus removes crystal column surface particle.First remove certain thickness dielectric film by wet etching; Cleaned, for removing crystal column surface particle completely removing certain thickness described dielectric film surface by brushing piece technique.
Below in conjunction with accompanying drawing, the inventive method is described in detail.
As shown in Figure 2, a kind of method removing crystal column surface particle, comprises the steps,
Step one: provide a wafer to be cleaned, the surface coverage of described wafer has dielectric film, is stained with some particles in described dielectric film;
Step 2: remove certain thickness described dielectric film by wet etching;
Step 3: cleaned removing certain thickness described dielectric film surface by brushing piece technique.
The method that the present invention removes surface particles is divided into two steps, first removes certain thickness dielectric film by wet etching; Cleaned, for removing crystal column surface particle completely removing certain thickness described dielectric film surface by brushing piece technique.
As shown in Figure 3, adopt this kind of mode, first dielectric film certain thickness on wafer can be removed, for reducing the adhesion of surface particles and wafer, again brushing piece process is done to wafer, remove crystal column surface particle completely, reduce the defect of crystal column surface, and cleaning process is simple, cost is low, wafer qualification rate is high.
As further preferred implementation, the etch period in step 2 of the present invention is 10s ~ 40s.
As further preferred implementation, the etching temperature in step 2 of the present invention is 20 DEG C ~ 30 DEG C.
As further preferred implementation, in step one of the present invention, the material of described dielectric film is silicon nitride, and surface particles contains the composition of silicon.
As further preferred implementation, in step 2 of the present invention, by the etch amount of dielectric film described in wet etching be
.
As further preferred implementation, in step 2 of the present invention, the solution of described wet etching is the mixed solution that hydrofluoric acid and solute contain HF, and the mixed solution that hydrofluoric acid and solute contain HF is fast to the etch rate of silicon nitride, and does not affect other performance of wafer.
As further preferred implementation, in step 2 of the present invention, the solution of described wet etching is HF and HNO
3mixed solution.
As further preferred implementation, in mixed solution of the present invention, described HF and HNO
3volume ratio be (1:25) ~ (1:50).Volume ratio can be 1:25,1:30,1:40,1:50.
As further preferred implementation, in mixed solution of the present invention, described HF and HNO
3volume ratio be 1:35.
As further preferred implementation, in step 2 of the present invention, the solution of described wet etching is phosphoric acid.
The foregoing is only preferred embodiment of the present invention; not thereby embodiments of the present invention and protection range is limited; to those skilled in the art; should recognize and all should be included in the scheme that equivalent replacement done by all utilizations specification of the present invention and diagramatic content and apparent change obtain in protection scope of the present invention.
Claims (10)
1. remove a method for crystal column surface particle, it is characterized in that, comprise the steps,
Step one: provide a wafer to be cleaned, the surface coverage of described wafer has dielectric film, is stained with some particles in described dielectric film;
Step 2: remove certain thickness described dielectric film by wet etching;
Step 3: cleaned removing certain thickness described dielectric film surface by brushing piece technique.
2. a kind of method removing crystal column surface particle according to claim 1, is characterized in that: the etch period in described step 2 is 10s ~ 40s.
3. a kind of method removing crystal column surface particle according to claim 1, is characterized in that: the etching temperature in described step 2 is 20 DEG C ~ 30 DEG C.
4. a kind of method removing crystal column surface particle according to claim 1, is characterized in that: in described step one, and the material of described dielectric film is silicon nitride, and surface particles contains the composition of silicon.
5. a kind of method removing crystal column surface particle according to claim 4, is characterized in that: in described step 2, by the etch amount of dielectric film described in wet etching is
.
6. a kind of method removing crystal column surface particle according to claim 1, is characterized in that: in described step 2, and the solution of described wet etching is the mixed solution that hydrofluoric acid and solute contain HF.
7. a kind of method removing crystal column surface particle according to claim 6, is characterized in that: in described step 2, and the solution of described wet etching is HF and HNO
3mixed solution.
8. a kind of method removing crystal column surface particle according to claim 6, is characterized in that: in described mixed solution, described HF and HNO
3volume ratio be (1:25) ~ (1:50).
9. a kind of method removing crystal column surface particle according to claim 8, is characterized in that: in described mixed solution, described HF and HNO
3volume ratio be 1:35.
10. a kind of method removing crystal column surface particle according to claim 1, is characterized in that: in described step 2, and the solution of described wet etching is phosphoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410273539.4A CN105225924A (en) | 2014-06-18 | 2014-06-18 | A kind of method removing crystal column surface particle |
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| CN201410273539.4A CN105225924A (en) | 2014-06-18 | 2014-06-18 | A kind of method removing crystal column surface particle |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020162572A1 (en) * | 2001-05-04 | 2002-11-07 | Hou-Hong Chou | Method for removing residual particles from a polished surface |
| US20030049935A1 (en) * | 2001-05-04 | 2003-03-13 | Promos Technologies Inc. | Method for removing residual particles from a polished surface |
| CN101770931A (en) * | 2008-12-30 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for removing organic particle impurities on wafer surface |
| CN101271835B (en) * | 2007-03-20 | 2010-12-22 | 富士通半导体股份有限公司 | Method of manufacturing a semiconductor device and a semiconductor manufacturing equipment |
| CN102626704B (en) * | 2012-03-31 | 2017-01-11 | 上海华虹宏力半导体制造有限公司 | Cleaning method used after chemical mechanical polishing and chemical mechanical polishing method |
-
2014
- 2014-06-18 CN CN201410273539.4A patent/CN105225924A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020162572A1 (en) * | 2001-05-04 | 2002-11-07 | Hou-Hong Chou | Method for removing residual particles from a polished surface |
| US20030049935A1 (en) * | 2001-05-04 | 2003-03-13 | Promos Technologies Inc. | Method for removing residual particles from a polished surface |
| CN101271835B (en) * | 2007-03-20 | 2010-12-22 | 富士通半导体股份有限公司 | Method of manufacturing a semiconductor device and a semiconductor manufacturing equipment |
| CN101770931A (en) * | 2008-12-30 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for removing organic particle impurities on wafer surface |
| CN102626704B (en) * | 2012-03-31 | 2017-01-11 | 上海华虹宏力半导体制造有限公司 | Cleaning method used after chemical mechanical polishing and chemical mechanical polishing method |
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Application publication date: 20160106 |
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