CN101169596A - Whole-wet photoresist removing method - Google Patents
Whole-wet photoresist removing method Download PDFInfo
- Publication number
- CN101169596A CN101169596A CNA2006101175901A CN200610117590A CN101169596A CN 101169596 A CN101169596 A CN 101169596A CN A2006101175901 A CNA2006101175901 A CN A2006101175901A CN 200610117590 A CN200610117590 A CN 200610117590A CN 101169596 A CN101169596 A CN 101169596A
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- wet
- liquor
- photoresist
- soup
- silicon chips
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Abstract
The invention discloses an all-wet degumming method, and includes the following steps: a plurality of silicon chips are dipped into an open wet liquor tank at one time, wherein, the liquor in the liquor tank is a mixture of sulphuric acid and oxyful. The wet liquor tank is capped and sealed up, and the liquor is heated to a temperature between 180 to 240 degrees Celsius system. When the silicon chips are degummed, the temperature of the liquor in the sealed wet liquor tank is reduced. The method realizes an all-wet incineration-free degumming; thereby, the incinerated damage is avoided, the consumption of the liquor is reduced, and the cost is saved. In addition, the method reduces the time of manufacturing an integrated circuit integrally, improves the productivity, lowers the capital investment and achieves an excellent degumming effect.
Description
Technical field
The present invention relates to the method for removing photoresist in a kind of semi-conductor industry, relate in particular to full wet method in a kind of semi-conductor industry method of removing photoresist.
Background technology
In integrated circuit (IC) is made, need repeatedly repeated removal mask this step with photoresist, therefore cleaning, the technology of removing photoresist is extremely important efficiently.Sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) potpourri can be with removing without injecting or the low dose of photoresist that injects.Equally, the ashing flow process also often is used in the process of removing photoresist, and in the ashing flow process, substrate is heated, and simultaneously photoresist is exposed in oxygen plasma or the ozone.Yet, when removing the amorphous carbon layer of heavy dose of ion implanted photoresist, the sulfuric acid (H of standard
2SO
4) and hydrogen peroxide (H
2O
2) potpourri and the effect that can play of ashing flow process all limited.
Therefore, for the ion injection of heavy dose, promptly the ion injection rate IR is greater than 1 * 1014ions/cm
2Situation under, removal photoresist method of the prior art is generally as follows:
(1) removes most photoresists with the ashing flow process;
(2) with sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) potpourri remove residual photoresist;
(3) with ammoniacal liquor (NH
4OH) and hydrogen peroxide (H
2O
2) potpourri remove residual sulphur and reduce surface particle.
Yet,, thereby increase the loss of soup because the ashing flow process can cause the oxidation and the structure entanglement of crystal column surface.Therefore wish to realize a kind of using sulfated (H of full wet method
2SO
4) and hydrogen peroxide (H
2O
2) the potpourri flow process of removing photoresist, can replace the ashing flow process of dry method to remove the photoresist that ion injects.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of full wet method method of removing photoresist, and can carry out full wet method to many pieces of silicon chips simultaneously and remove photoresist, and saves the flow process that ashing is removed photoresist, thereby avoids oxidation and structure entanglement by the caused crystal column surface of ashing flow process, reduces sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) the consumption of admixing medical solutions, and can guarantee sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) between abundant reaction, thereby reach the desirable effect of removing photoresist.
For solving the problems of the technologies described above, the invention provides a kind of full wet method method of removing photoresist, comprising:
Simultaneously many pieces of silicon chips are immersed in the open type wet liquid medicine groove, the soup that fills in the wherein said dipper is the potpourri of sulfuric acid and hydrogen peroxide;
With described wet liquid medicine groove covered and enclosed, and described soup heated to 180～240 ℃;
When many pieces of silicon chips all remove photoresist finish after, described airtight wet method groove soup is lowered the temperature.
The present invention has adopted technique scheme, has following beneficial effect, promptly by many pieces of silicon chips are immersed in the wet method groove, then the wet method groove is carried out airtight heating, and improves the wet liquid medicine method of temperature, has guaranteed sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) between abundant reaction, thereby realized that the full wet method of can be simultaneously many pieces of silicon chips being carried out immersion do not have ashing and remove photoresist, avoided the ashing damage thus, reduced the consumption of soup, saved cost; And, reduced integrated circuit (IC) time made in one piece, improve productive rate and reduced the input of fund; Realized the good effect of removing photoresist.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is with the synoptic diagram in the many pieces of silicon chips immersion open type wet liquid medicine grooves according to the present invention;
Fig. 2 is the synoptic diagram when according to the present invention the wet liquid medicine groove being carried out airtight heating.
Embodiment
In one embodiment, the method for removing photoresist of the present invention may further comprise the steps:
At first, as shown in Figure 1, many pieces of silicon chips are immersed in the wet liquid medicine groove, described dipper is an open type, and the soup that wherein fills is sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) potpourri; Generally, the temperature of described soup is 150 ± 10 ℃.
Then, as shown in Figure 2, with wet liquid medicine groove covered and enclosed, and described soup heated, its temperature range is 180～240 ℃, and when the temperature of this admixing medical solutions is 200 ± 10 ℃, the best results of removing photoresist.
Remove photoresist after the end, if under hot environment, directly open closed cell, the hydrogen peroxide after the step-down is volatilization rapidly, thereby causes the proportioning of sulfuric acid and hydrogen peroxide admixing medical solutions to change rapidly.
Therefore after many pieces of silicon chips are all removed photoresist fully, need airtight wet method groove soup is lowered the temperature.
After said process is finished, just can open closed cover, silicon chip is taken out from the wet liquid medicine groove, just can enter subsequent processing then and handle.
From above-mentioned steps as can be known, the method that full wet method of the present invention is removed photoresist has been saved the step of ashing, has guaranteed sulfuric acid (H
2SO
4) and hydrogen peroxide (H
2O
2) abundant reaction between potpourri, reach the effect of better removing photoresist, and reduced the consumption of soup, saved cost.
Claims (2)
1. full wet method method of removing photoresist is characterized in that, comprising:
Simultaneously many pieces of silicon chips are immersed in the open type wet liquid medicine groove, the soup that fills in the wherein said dipper is the potpourri of sulfuric acid and hydrogen peroxide;
With described wet liquid medicine groove covered and enclosed, and described soup heated to 180～240 ℃;
When described many pieces of silicon chips all remove photoresist finish after, described airtight wet method groove soup is lowered the temperature.
2. the full wet method according to claim 1 method of removing photoresist is characterized in that, described soup is heated to 200 ± 10 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101175901A CN101169596A (en) | 2006-10-26 | 2006-10-26 | Whole-wet photoresist removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101175901A CN101169596A (en) | 2006-10-26 | 2006-10-26 | Whole-wet photoresist removing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101169596A true CN101169596A (en) | 2008-04-30 |
Family
ID=39390262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101175901A Pending CN101169596A (en) | 2006-10-26 | 2006-10-26 | Whole-wet photoresist removing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101169596A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101968610A (en) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | Method for removing optical resist after all-wet etching process |
| CN104810255A (en) * | 2015-02-28 | 2015-07-29 | 株洲南车时代电气股份有限公司 | Method of removing carbon protection film on surface of silicon carbide device |
| CN106935685A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | A kind of LED chip removes gluing method |
| CN112802775A (en) * | 2020-12-23 | 2021-05-14 | 华虹半导体(无锡)有限公司 | SPM liquid heating method |
-
2006
- 2006-10-26 CN CNA2006101175901A patent/CN101169596A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101968610A (en) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | Method for removing optical resist after all-wet etching process |
| CN104810255A (en) * | 2015-02-28 | 2015-07-29 | 株洲南车时代电气股份有限公司 | Method of removing carbon protection film on surface of silicon carbide device |
| CN106935685A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | A kind of LED chip removes gluing method |
| CN112802775A (en) * | 2020-12-23 | 2021-05-14 | 华虹半导体(无锡)有限公司 | SPM liquid heating method |
| CN112802775B (en) * | 2020-12-23 | 2022-10-04 | 华虹半导体(无锡)有限公司 | SPM liquid heating method |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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