CN105225923A - For preprocess method and the bonding method of the aluminum of bonding - Google Patents
For preprocess method and the bonding method of the aluminum of bonding Download PDFInfo
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- CN105225923A CN105225923A CN201410231355.1A CN201410231355A CN105225923A CN 105225923 A CN105225923 A CN 105225923A CN 201410231355 A CN201410231355 A CN 201410231355A CN 105225923 A CN105225923 A CN 105225923A
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- aluminium lamination
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- aluminum
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Abstract
The invention provides a kind of preprocess method and bonding method of the aluminum for bonding, described preprocess method comprises the steps: to provide a surface to have the first substrate of aluminium lamination; Plasma treatment is implemented to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.The invention has the advantages that, plasma treatment is implemented to aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.Owing to there is no the use of reducibility gas, improve the fail safe of removing oxide layer, reduce the cost of bonding.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of preprocess method and bonding method of the aluminum for bonding.
Background technology
Aluminum and other semi-conducting materials (such as germanium) fuse the ohmic contact that can obtain eutectic metal bonding at low temperatures, and aluminium has the character of following uniqueness as bonding material: (1) can form gas-tight seal; (2) conducting channel between two substrates can be formed; (3) manufacture compatibility completely with CMOS, aluminium is a kind of standard CMOS back end technique bonding; (4) this process can provide high density electrical interconnection.Due to above-mentioned advantage, aluminum is made to become the focus of industry concern.
But a problem of aluminum avoids the oxidation of aluminium film.The aerial autoxidation of aluminium can form aluminium oxide, and this layer of aluminum oxide film can affect eutectic bonding performance.The processing method of present industry passes into reducibility gas in bonding machine platform, and such as, hydrogen, carrys out the oxygen atom in reduction-oxidation aluminium, but which enhances the use cost of bonding machine platform, and hydrogen is that one can right gas in addition, needs special fail safe process.
Summary of the invention
Technical problem to be solved by this invention is, provide a kind of preprocess method and bonding method of the aluminum for bonding, it can remove the aluminium oxide on aluminium surface, improves the performance of aluminium bonding, improves bonding fail safe, reduces bonding cost.
In order to solve the problem, the invention provides a kind of preprocess method of the aluminum for bonding, comprise the steps: to provide a surface to have the first substrate of aluminium lamination; Plasma treatment is implemented to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.
Further, the proportion of described chlorine and fluoroform is 10:1 ~ 3:1:
Further, the scope of the bias power of described plasma treatment step is 200 watts ~ 1000 watts.
Further, the temperature of described plasma treatment is less than 40 degrees Celsius.
The present invention also provides a kind of bonding method, the first substrate comprising the steps: to provide a surface to have aluminium lamination and one second substrate; Plasma treatment is implemented to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma; Take aluminium lamination as intermediate layer, bonding is carried out to described first substrate after the second substrate and plasma treatment.
Further, the proportion of chlorine and fluoroform is 10:1 ~ 3:1.
Further, the scope of the bias power of described plasma treatment step is 200 watts ~ 1000 watts.
Further, the etching temperature of described plasma treatment step is less than 40 degrees Celsius.
The invention has the advantages that, plasma treatment is implemented to aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.Owing to there is no the use of reducibility gas, improve the fail safe of removing oxide layer, reduce the cost of bonding.
Accompanying drawing explanation
Fig. 1 is the step schematic diagram of the present invention for the preprocess method of the aluminum of bonding;
Fig. 2 A ~ Fig. 2 B is the process chart of the present invention for the preprocess method of the aluminum of bonding;
Fig. 3 is the step schematic diagram of bonding method of the present invention;
Fig. 4 A ~ Fig. 4 C is the process chart of bonding method of the present invention.
Embodiment
Below in conjunction with accompanying drawing, a kind of preprocess method of the aluminum for bonding provided by the invention and the embodiment of bonding method are elaborated.
See Fig. 1, the preprocess method of a kind of aluminum for bonding of the present invention, comprises the steps: step S10, provides a surface to have the first substrate of aluminium lamination; Step S11, implements plasma treatment to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.
Fig. 2 A and Fig. 2 B is the process chart of the present invention for the preprocess method of the aluminum of bonding.
See Fig. 2 A and step S10, a surface is provided to have the first substrate 200 of aluminium lamination 201.Described first substrate can be CMOS substrate.Further, described aluminium lamination 201 is patterned aluminium lamination, to meet the demand of device.Because aluminium in atmosphere can by autoxidation, so there is layer of oxide layer 202 on aluminium lamination 201 surface.Described oxide layer 202 can affect the eutectic bonding performance of aluminum.
See Fig. 2 B and step S11, plasma treatment is implemented to described aluminium lamination 201, to remove the oxide layer 202 on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.The proportion of described chlorine and fluoroform is 10:1 ~ 3:1.Apply a bias power some time to the chamber carrying out plasma treatment, make the source material of plasma form anisortopicpiston, to remove the oxide layer 202 on described aluminium lamination 201 surface.Described chlorine and fluoroform form anisotropic plasma under bias power, thus can etch described oxide layer 202, and oxide layer 202 is disappeared.The chemical equation of this reaction is as follows:
Al
2O
3+Cl
2+CHF
3→AlCl
3+CO/CO
2+HF
In above-mentioned plasma treatment step, the scope of bias power is 200 ~ 1000 watts.The etching temperature of plasma treatment is less than 40 degrees Celsius.The etch period of plasma treatment is less than 1min.
See Fig. 3, the present invention also provides a kind of bonding method, and described method comprises the steps: step S30, the first substrate providing a surface to have aluminium lamination and one second substrate; Step S31, implements plasma treatment to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma; Step S32 take aluminium lamination as intermediate layer, carries out bonding to described first substrate after the second substrate and plasma treatment.
Fig. 4 A ~ Fig. 4 C is the process chart of the method for aluminium germanium bonding of the present invention.
See Fig. 4 A and step S30, a surface is provided to have the first substrate 400 and one second substrate 410 of aluminium lamination 401.In this embodiment, described first substrate 400 is CMOS substrate, and described second substrate 410 is MEMS substrate.The surface of described second substrate 410 has a germanium layer 411.Further, described aluminium lamination 401 is patterned aluminium lamination, and described germanium layer 411 is patterned germanium layer, to meet the demand of device.Because aluminium in atmosphere can by autoxidation, so there is layer of oxide layer 402 on aluminium lamination 401 surface.Described oxide layer 402 can affect the eutectic bonding performance of aluminum.
In order to make accompanying drawing more clearly can show the present invention, the size of aluminium lamination 401 and germanium layer 411 is exaggerated in the accompanying drawings.In this embodiment, the mode that described aluminium lamination 401 and germanium layer 411 are deposited by metal is formed.The thickness of described aluminium lamination 401 is 5000 ~ 2 μm, and the thickness of described germanium layer 411 is 3500 ~ 1 μm.Preferably, the thickness of described aluminium lamination 401 is greater than the thickness of described germanium layer 411.The figure of described germanium layer 411 is of a size of 10 μm ~ 100 μm, and the figure of described aluminium lamination 401 is of a size of 10 μm ~ 100 μm.Preferably, the size of the figure of described aluminium lamination 401 is greater than the size of the figure of described germanium layer 411.Preferably, the width of the width of the figure of described germanium layer 411 and the figure of described aluminium lamination 401 is greater than 15 μm.
See Fig. 4 B and step S31, plasma treatment is implemented to described aluminium lamination 401, to remove the oxide layer 402 on described aluminium lamination 401 surface, containing chlorine and fluoroform in the source material of described plasma.The proportion of described chlorine and fluoroform is 10:1 ~ 3:1.Apply a bias power some time to the chamber carrying out plasma treatment, make the source material of plasma form anisortopicpiston, to remove the oxide layer 402 on described aluminium lamination 401 surface.Described chlorine and fluoroform form anisotropic plasma under bias power, thus can etch described oxide layer 402, and oxide layer 402 is disappeared.The chemical equation of this reaction is as follows:
Al
2O
3+Cl
2+CHF
3→AlCl
3+CO/CO
2+HF
In above-mentioned plasma treatment step, the scope of bias power is 200 watts ~ 1000 watts.The etching temperature of plasma treatment is less than 40 degrees Celsius.The etch period of plasma treatment is less than 1min.
See Fig. 4 C and step S32, with aluminium lamination 401 for intermediate layer, bonding is carried out to described first substrate 400 after the second substrate 410 and plasma treatment.In this embodiment, with aluminium lamination 401 and germanium layer 411 for intermediate layer, bonding is carried out to described first substrate 400 after the second substrate 410 and plasma treatment.Described aluminium lamination 401 fuses with described germanium layer 411 ohmic contact obtaining eutectic metal bonding at low temperatures, forms aluminium germanium eutectic bonding layer 420.In this step, described bonding process carries out in a vacuum, and bonding temperature is 400 degrees centigrade.The aluminium lamination 401 of described first substrate is after above-mentioned etching processing, and oxide layer 402 is removed, and improves the bonding performance of aluminum.
The present invention does not adopt reducibility gas; such as; hydrogen, removes oxide layer, but implements plasma treatment to aluminium lamination; to remove the oxide layer on described aluminium lamination surface; containing chlorine and fluoroform in the source material of described plasma, so the present invention does not need the protection of extra special fail safe removing oxide layer; improve fail safe, reduce bonding cost.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. for a preprocess method for the aluminum of bonding, it is characterized in that, comprise the steps: to provide a surface to have the first substrate of aluminium lamination; Plasma treatment is implemented to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma.
2. the preprocess method of the aluminum for bonding according to claim 1, is characterized in that, the proportion of described chlorine and fluoroform is 10:1 ~ 3:1.
3. the preprocess method of the aluminum for bonding according to claim 1, is characterized in that, the scope of the bias power of described plasma treatment step is 200 watts ~ 1000 watts.
4. the preprocess method of the aluminum for bonding according to claim 1, is characterized in that, the temperature of described plasma treatment is less than 40 degrees Celsius.
5. a bonding method, is characterized in that, the first substrate comprising the steps: to provide a surface to have aluminium lamination and one second substrate; Plasma treatment is implemented to described aluminium lamination, to remove the oxide layer on described aluminium lamination surface, containing chlorine and fluoroform in the source material of described plasma; Take aluminium lamination as intermediate layer, bonding is carried out to described first substrate after the second substrate and plasma treatment.
6. bonding method according to claim 5, is characterized in that, the proportion of described chlorine and fluoroform is 10:1 ~ 3:1.
7. bonding method according to claim 5, is characterized in that, the scope of the bias power of described plasma treatment step is 200 watts ~ 1000 watts.
8. bonding method according to claim 5, is characterized in that, the etching temperature of described plasma treatment step is less than 40 degrees Celsius.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109887851A (en) * | 2019-03-15 | 2019-06-14 | 安徽宏实自动化装备有限公司 | A kind of processing procedure using aluminum metal production redistributing layer |
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| CN101171665A (en) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom |
| US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
| CN101285189A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Process for decreasing deposit at reaction chamber in metal etching process |
| CN102154650A (en) * | 2011-01-30 | 2011-08-17 | 福建福顺微电子有限公司 | Thick aluminum etching method during producing bipolar integrated circuit |
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
| CN101171665A (en) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom |
| CN101285189A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Process for decreasing deposit at reaction chamber in metal etching process |
| CN102154650A (en) * | 2011-01-30 | 2011-08-17 | 福建福顺微电子有限公司 | Thick aluminum etching method during producing bipolar integrated circuit |
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109887851A (en) * | 2019-03-15 | 2019-06-14 | 安徽宏实自动化装备有限公司 | A kind of processing procedure using aluminum metal production redistributing layer |
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