CN105225923B - The preprocess method and bonding method of aluminum material for bonding - Google Patents
The preprocess method and bonding method of aluminum material for bonding Download PDFInfo
- Publication number
- CN105225923B CN105225923B CN201410231355.1A CN201410231355A CN105225923B CN 105225923 B CN105225923 B CN 105225923B CN 201410231355 A CN201410231355 A CN 201410231355A CN 105225923 B CN105225923 B CN 105225923B
- Authority
- CN
- China
- Prior art keywords
- layer
- bonding
- aluminium
- plasma
- aluminium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention provides the preprocess method and bonding method of a kind of aluminum material for bonding, and the preprocess method includes the following steps: to provide the first substrate that a surface has aluminium layer；Corona treatment is implemented to the aluminium layer, to remove the oxide layer on the aluminium layer surface, contains chlorine and fluoroform in the source substance of the plasma.It is an advantage of the current invention that implementing corona treatment to aluminium layer, to remove the oxide layer on the aluminium layer surface, contain chlorine and fluoroform in the source substance of the plasma.Due to the use of not no reducibility gas, the safety of removing oxide layer is improved, the cost of bonding is reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of preprocess methods of the aluminum material for bonding
And bonding method.
Background technique
Aluminum material and other semiconductor materials (such as germanium) fuse ohm of available eutectic metal bonding at low temperature
Contact, and aluminium has following unique property as bonding material: (1) it can be formed gas-tight seal；(2) can be formed two substrates it
Between conducting channel；(3) completely compatible with CMOS manufacture, aluminium is a kind of standard CMOS back end technique bonding；(4) this process can
To provide high density electrical interconnection.Due to above-mentioned advantage, so that aluminum material becomes the hot spot of industry concern.
But aluminum material problem is to avoid the oxidation of aluminium film.The aerial autoxidation of aluminium will form oxygen
Change aluminium, this layer of aluminum oxide film will affect eutectic bonding performance.The processing method of present industry is to be passed through in bonding machine platform also
Originality gas for example, hydrogen, carrys out the oxygen atom in reduction-oxidation aluminium, but improves the use cost of bonding machine platform, in addition in this way
Hydrogen be one kind can right gas, need special safety to handle.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of preprocess method of aluminum material for bonding and bondings
Method, it can remove the aluminium oxide of aluminium surface, improve the performance of aluminium bonding, improve bonding safety, reduce bonding cost.
To solve the above-mentioned problems, the present invention provides a kind of preprocess methods of aluminum material for bonding, including such as
Lower step: the first substrate that a surface has aluminium layer is provided；Corona treatment is implemented to the aluminium layer, to remove the aluminium layer
The oxide layer on surface contains chlorine and fluoroform in the source substance of the plasma.
Further, the proportional region of the chlorine and fluoroform is 10:1 ~ 3:1:
Further, the range of the bias power of the plasma treatment step is 200 watts ~ 1000 watts.
Further, the temperature of the corona treatment is less than 40 degrees Celsius.
The present invention also provides a kind of bonding method, include the following steps: to provide a surface have aluminium layer the first substrate and
One second substrate；Corona treatment is implemented to the aluminium layer, to remove the oxide layer on the aluminium layer surface, the plasma
Source substance in contain chlorine and fluoroform；Using aluminium layer as middle layer, described in after the second substrate and corona treatment
First substrate is bonded.
Further, the proportional region of chlorine and fluoroform is 10:1 ~ 3:1.
Further, the range of the bias power of the plasma treatment step is 200 watts ~ 1000 watts.
Further, the etching temperature of the plasma treatment step is less than 40 degrees Celsius.
It is an advantage of the current invention that implementing corona treatment to aluminium layer, to remove the oxide layer on the aluminium layer surface, institute
It states and contains chlorine and fluoroform in the source substance of plasma.Due to the use of not no reducibility gas, deoxygenation is improved
The safety for changing layer, reduces the cost of bonding.
Detailed description of the invention
Fig. 1 is step schematic diagram of the present invention for the preprocess method of the aluminum material of bonding；
Fig. 2A ~ Fig. 2 B is process flow chart of the present invention for the preprocess method of the aluminum material of bonding；
Fig. 3 is the step schematic diagram of bonding method of the present invention；
Fig. 4 A ~ Fig. 4 C is the process flow chart of bonding method of the present invention.
Specific embodiment
With reference to the accompanying drawing to a kind of preprocess method and bonding method of the aluminum material for bonding provided by the invention
Specific embodiment elaborate.
Referring to Fig. 1, a kind of preprocess method of the aluminum material for bonding of the present invention includes the following steps: step S10,
The first substrate that one surface has aluminium layer is provided；Step S11 implements corona treatment to the aluminium layer, to remove the aluminium
The oxide layer of layer surface contains chlorine and fluoroform in the source substance of the plasma.
Fig. 2A and Fig. 2 B is process flow chart of the present invention for the preprocess method of the aluminum material of bonding.
A and step S10 referring to fig. 2 provides the first substrate 200 that a surface has aluminium layer 201.First substrate can be with
For CMOS substrate.Further, the aluminium layer 201 is patterned aluminium layer, to meet the needs of device.Since aluminium in air can
By autoxidation, so there is layer of oxide layer 202 on 201 surface of aluminium layer.The oxide layer 202 will affect the eutectic of aluminum material
Bonding performance.
B and step S11 referring to fig. 2 implements corona treatment to the aluminium layer 201, to remove the aluminium layer surface
Oxide layer 202 contains chlorine and fluoroform in the source substance of the plasma.The ratio model of the chlorine and fluoroform
It encloses for 10:1 ~ 3:1.Apply a bias power some time to the chamber for carrying out corona treatment, makes the source object of plasma
Matter forms anisortopicpiston, to remove the oxide layer 202 on 201 surface of aluminium layer.The chlorine and fluoroform exist
Anisotropic plasma is formed under bias power, so as to etch the oxide layer 202, oxide layer 202 is made to disappear.It should
The chemical equation of reaction is as follows:
Al2O3+Cl2+CHF3→AlCl3+CO/CO2+HF
In above-mentioned plasma treatment step, the range of bias power is 200 ~ 1000 watts.The quarter of corona treatment
Temperature is lost less than 40 degrees Celsius.The etch period of corona treatment is less than 1min.
Referring to Fig. 3, the present invention also provides a kind of bonding methods, and described method includes following steps: step S30 provides one
Surface has the first substrate and one second substrate of aluminium layer；Step S31 implements corona treatment to the aluminium layer, with removal
The oxide layer on the aluminium layer surface contains chlorine and fluoroform in the source substance of the plasma；Step S32, with aluminium layer
For middle layer, first substrate after the second substrate and corona treatment is bonded.
Fig. 4 A ~ Fig. 4 C is the process flow chart of the method for aluminium germanium of the present invention bonding.
A and step S30 referring to fig. 4 provides the first substrate 400 and one second substrate 410 that a surface has aluminium layer 401.
In this embodiment, first substrate 400 is CMOS substrate, and second substrate 410 is MEMS substrate.Described
The surface of two substrates 410 has a germanium layer 411.Further, the aluminium layer 401 is patterned aluminium layer, and the germanium layer 411 is figure
The germanium layer of shape, to meet the needs of device.Since aluminium in air can be by autoxidation, so having on 401 surface of aluminium layer
Layer of oxide layer 402.The oxide layer 402 will affect the eutectic bonding performance of aluminum material.
In order to enable attached drawing more clearly to show the present invention, the size of aluminium layer 401 and germanium layer 411 is exaggerated in the accompanying drawings.
In this embodiment, the aluminium layer 401 and germanium layer 411 are formed by way of metal deposit.The thickness of the aluminium layer 401
Degree be 5000 ~ 2 μm, the germanium layer 411 with a thickness of 3500 ~ 1 μm.Preferably, the thickness of the aluminium layer 401 is greater than described
The thickness of germanium layer 411.The size of the figure of the germanium layer 411 is 10 μm ~ 100 μm, and the size of the figure of the aluminium layer 401 is 10
μm~100μm.Preferably, the size of the figure of the aluminium layer 401 is greater than the size of the figure of the germanium layer 411.Preferably, institute
The width for stating the width of the figure of germanium layer 411 and the figure of the aluminium layer 401 is greater than 15 μm.
B and step S31 referring to fig. 4 implements corona treatment to the aluminium layer 401, to remove 401 surface of aluminium layer
Oxide layer 402, chlorine and fluoroform are contained in the source substance of the plasma.The ratio of the chlorine and fluoroform
Range is 10:1 ~ 3:1.Apply a bias power some time to the chamber for carrying out corona treatment, makes the source of plasma
Substance forms anisortopicpiston, to remove the oxide layer 402 on 401 surface of aluminium layer.The chlorine and fluoroform
Anisotropic plasma is formed under bias power, so as to etch the oxide layer 402, oxide layer 402 is made to disappear.
The chemical equation of the reaction is as follows:
Al2O3+Cl2+CHF3→AlCl3+CO/CO2+HF
In above-mentioned plasma treatment step, the range of bias power is 200 watts ~ 1000 watts.Corona treatment
Etching temperature is less than 40 degrees Celsius.The etch period of corona treatment is less than 1min.
C and step S32 referring to fig. 4, is middle layer with aluminium layer 401, to the institute after the second substrate 410 and corona treatment
The first substrate 400 is stated to be bonded.In this embodiment, it is middle layer with aluminium layer 401 and germanium layer 411, is served as a contrast to second
First substrate 400 behind bottom 410 and corona treatment is bonded.The aluminium layer 401 and the germanium layer 411 are in low temperature
Lower fusion obtains the Ohmic contact of eutectic metal bonding, forms aluminium germanium eutectic bonding layer 420.In this step, the bonding process
It carries out in a vacuum, bonding temperature is 400 degrees centigrades.The aluminium layer 401 of first substrate passes through above-mentioned etching processing
Afterwards, oxide layer 402 is removed, and improves the bonding performance of aluminum material.
The present invention does not use reducibility gas, for example, hydrogen, removing oxide layer of making a return journey, but plasma is implemented to aluminium layer
Body processing contains chlorine and fluoroform, institute in the source substance of the plasma to remove the oxide layer on the aluminium layer surface
With the present invention improves safety, reduce and be bonded in the protection for going removing oxide layer not need additional special safety
This.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (2)
1. a kind of preprocess method of the aluminum material for bonding, which comprises the steps of:
The first substrate that one surface has aluminium layer is provided；
Corona treatment is implemented to the aluminium layer, so that the source substance of plasma is formed anisortopicpiston, with removal
The oxide layer on the aluminium layer surface；Wherein, in the source substance of the plasma contain chlorine and fluoroform, the chlorine and
The proportional region of fluoroform is 10:1~3:1, the range of the bias power of the plasma treatment step is 200 watts~
1000 watts, the temperature of the corona treatment is less than 40 degrees Celsius；Also, the chlorine and fluoroform are in the biasing function
Anisotropic plasma is formed under rate.
2. a kind of bonding method, which comprises the steps of:
The first substrate and one second substrate that one surface has aluminium layer are provided；
Corona treatment is implemented to the aluminium layer, to remove the oxide layer on the aluminium layer surface, the source object of the plasma
Contain chlorine and fluoroform in matter, the proportional region of the chlorine and fluoroform is 10:1~3:1；It is centre with aluminium layer
Layer, first substrate after the second substrate and corona treatment is bonded, the plasma treatment step it is inclined
Set power range be 200 watts~1000 watts so that the chlorine and fluoroform formed under the bias power it is each to different
The plasma of property, also, the etching temperature of the plasma treatment step is less than 40 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231355.1A CN105225923B (en) | 2014-05-29 | 2014-05-29 | The preprocess method and bonding method of aluminum material for bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231355.1A CN105225923B (en) | 2014-05-29 | 2014-05-29 | The preprocess method and bonding method of aluminum material for bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105225923A CN105225923A (en) | 2016-01-06 |
| CN105225923B true CN105225923B (en) | 2019-11-26 |
Family
ID=54994807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410231355.1A Active CN105225923B (en) | 2014-05-29 | 2014-05-29 | The preprocess method and bonding method of aluminum material for bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105225923B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109887851B (en) * | 2019-03-15 | 2020-09-15 | 安徽宏实自动化装备有限公司 | Manufacturing process for manufacturing redistribution layer by using aluminum metal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171665A (en) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom |
| CN101285189A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Process for decreasing deposit at reaction chamber in metal etching process |
| CN102154650A (en) * | 2011-01-30 | 2011-08-17 | 福建福顺微电子有限公司 | Thick aluminum etching method during producing bipolar integrated circuit |
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
-
2014
- 2014-05-29 CN CN201410231355.1A patent/CN105225923B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171665A (en) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom |
| CN101285189A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Process for decreasing deposit at reaction chamber in metal etching process |
| CN102154650A (en) * | 2011-01-30 | 2011-08-17 | 福建福顺微电子有限公司 | Thick aluminum etching method during producing bipolar integrated circuit |
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105225923A (en) | 2016-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Deep etching of single-and polycrystalline silicon with high speed, high aspect ratio, high uniformity, and 3D complexity by electric bias-attenuated metal-assisted chemical etching (EMaCE) | |
| CN104620364B (en) | The method of the silicon etching planarized for trenched side-wall | |
| US20120007132A1 (en) | Reduction of etch microloading for through silicon vias | |
| US10053361B2 (en) | Method of selectively removing an anti-stiction layer on a eutectic bonding area | |
| WO2011094568A3 (en) | Cleaning agent for semiconductor provided with metal wiring | |
| JP2014209613A5 (en) | ||
| CN106660782A (en) | Integrated cmos and mems sensor fabrication method and structure | |
| CN108987342B (en) | Method for plasma etching and plasma cutting | |
| JP2017520906A (en) | Etchback process of bonding materials for the fabrication of through glass vias | |
| JP6476419B2 (en) | Device chip manufacturing method and device chip | |
| US9362127B2 (en) | Method for processing a workpiece by forming a pourous metal layer | |
| CN105225923B (en) | The preprocess method and bonding method of aluminum material for bonding | |
| JP6281883B2 (en) | Package formation method | |
| TW201601190A (en) | Method of etching | |
| CN107032288A (en) | CMOS MEMS structures and forming method thereof | |
| CN104009069B (en) | Device and method for manufacturing device | |
| US11167982B2 (en) | Semiconductor arrangement and formation thereof | |
| Anantha et al. | Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation | |
| CN105304480B (en) | The dry etching method of germanium | |
| Knechtel et al. | The importance of wafer edge in wafer bonding technologies and related wafer edge engineering methods | |
| JP6492286B2 (en) | Device chip manufacturing method | |
| JP2011504299A5 (en) | ||
| Tang et al. | Fast etching of molding compound by an ar/o2/cf4 plasma and process improvements for semiconductor package decapsulation | |
| Nittala et al. | Characterization and optimization of bonding and interconnect technology for 3D stacking thin dies | |
| TWI489541B (en) | Method for dielectric material removal between conductive lines |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 200000 room 307, floor 3, No. 1328, Dingxi Road, Changning District, Shanghai Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: 201815 room 3157, building 3, No. 1368, Xingxian Road, Jiading District, Shanghai Patentee before: Shanghai Silicon Technology Co.,Ltd. |