CN105206903B - Folded form half module substrate integrated wave guide broadband band-pass filter - Google Patents
Folded form half module substrate integrated wave guide broadband band-pass filter Download PDFInfo
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- CN105206903B CN105206903B CN201510560244.XA CN201510560244A CN105206903B CN 105206903 B CN105206903 B CN 105206903B CN 201510560244 A CN201510560244 A CN 201510560244A CN 105206903 B CN105206903 B CN 105206903B
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Abstract
Folded form half module substrate integrated wave guide broadband band-pass filter, it is related to a kind of wave filter, and in particular to a kind of folded form half module substrate integrated wave guide broadband band-pass filter.The present invention is in order to solve the problem of the high narrow bandwidth of the working frequency of common substrate integration wave-guide bandpass filter.The present invention includes medium substrate, upper metal layer, lower metal layer, positive first microstrip line, positive second microstrip line, the first microstrip line of the back side, two the first metal inserts of front, two the second metal inserts of front, two positive third metal inserts, two the first metal inserts of the back side, two the second metal inserts of the back side and two back side third metal inserts, upper metal layer and lower metal layer are respectively printed at the front and back of medium substrate, medium substrate is made of rectangular slab and semicircular plate, the right end of rectangular slab and the vertical edge of semicircular plate link into an integrated entity, positive first microstrip line is rectangle.The present invention is used for wireless communication field.
Description
Technical field
The present invention relates to a kind of wave filters, and in particular to a kind of folded form half module substrate integrated wave guide broadband bandpass filtering
Device belongs to wireless communication field.
Background technology
Medium integrated waveguide is a kind of guided wave knot realized on dielectric substrate similar to metal rectangular waveguide transmission characteristic
Structure since the structure has many advantages, such as Low emissivity, filter with low insertion loss, minimizes, is easily integrated, becomes the hot spot of research, also extensive
Design applied to wave filter.By means of printed circuit technology, the low cost batch of the wave filter based on medium integrated waveguide is raw
Production is known as may.But the working frequency of common substrate integration wave-guide bandpass filter is very high, narrower bandwidth, which has limited
Its application range.
Invention content
The present invention is to solve the problem of the high narrow bandwidth of working frequency of common substrate integration wave-guide bandpass filter, into
And propose folded form half module substrate integrated wave guide broadband band-pass filter.
The present invention in order to solve the above problem the technical solution adopted is that：The present invention includes medium substrate, upper metal layer, lower gold
Belong to layer, positive first microstrip line, positive second microstrip line, the first microstrip line of the back side, two the first metal inserts of front, two just
The second metal insert of face, two positive third metal inserts, two the first metal inserts of the back side, two the second metal inserts of the back side
With two back side third metal inserts, upper metal layer and lower metal layer are respectively printed at the front and back of medium substrate, medium
Substrate is made of rectangular slab and semicircular plate, and the right end of rectangular slab and the vertical edge of semicircular plate link into an integrated entity, front
First microstrip line is rectangle, and positive first microstrip line is printed on the middle part of metal layer outer surface right end, and front first is micro-
Short side with line right end is overlapped with the short side of upper metal layer right end, and positive second microstrip line is printed on a left side for metal layer outer surface
End, the first microstrip line of the back side are rectangle, and the first microstrip line of the back side is printed on the middle part of lower metal layer outer surface right end, upper metal
Two long sides and left end short side of positive first microstrip line of layer outer surface upper edge are laid with multiple first metallization VIAs, upper gold
Belong to and ranked second metallization VIA, Mei Ge equipped with two between the first microstrip line of front on layer outer surface and positive second microstrip line
One metallization VIA and each second metallization VIA from top to bottom sequentially pass through metal layer, medium substrate, lower metal layer,
The positive both sides of the edge of medium substrate are embedded in positive first metal insert, positive second metal insert, front successively from left to right
Third metal insert, the both sides of the edge at the medium substrate back side are embedded in the first metal insert of the back side, the back side second successively from left to right
Metal insert, back side third metal insert.
The beneficial effects of the invention are as follows：Simulation result show designed wave filter working band covering 1.81~
3.11GHz, relative bandwidth is up to 52.85%.The wave filter be printed form structure, have section it is low, it is light-weight, be easily integrated, band
It the characteristics of wider, can be extensively using in a communications system.
Description of the drawings
Fig. 1 is the positive structure schematic of the present invention, and Fig. 2 is the structure schematic diagram of the present invention, and Fig. 3 is of the invention
Side sectional view, Fig. 4 are the S parameter simulation result curve graphs of the present invention.
Specific embodiment
Specific embodiment one：Each present embodiment is said with reference to Fig. 1 to Fig. 3, folded form half module described in present embodiment
Chip integrated waveguide broad-band bandpass filter include medium substrate 1, upper metal layer 2, lower metal layer 3, positive first microstrip line 4,
Positive second microstrip line 5, the first metal insert of front 7, two of the first microstrip line of the back side 6, two the second metal insert of front 8,
Two positive third metal insert 9, two the second metal inserts of the back side 11 of the first metal insert of the back side 10, two and two back sides
Third metal insert 12, upper metal layer 2 and lower metal layer 3 are respectively printed at the front and back of medium substrate 1, medium substrate 1
It is made of rectangular slab 1-1 and semicircular plate 1-2, the right end of rectangular slab 1-1 connects into one with the vertical edge of semicircular plate 1-2
Body, positive first microstrip line 4 are rectangle, and positive first microstrip line 4 is printed on the middle part of 2 outer surface right end of metal layer, and
The short side of 4 right end of positive first microstrip line is overlapped with the short side of upper 2 right end of metal layer, and positive second microstrip line 5 is printed on gold
Belong to the left end of 2 outer surface of layer, the first microstrip line of the back side 6 is rectangle, and the first microstrip line of the back side 6 is printed on 3 appearance of lower metal layer
The middle part of face right end, two long sides and left end short side of positive first microstrip line 4 of 2 outer surface upper edge of upper metal layer are laid with more
A first metallization VIA 13 is set between the first microstrip line of front 4 and positive second microstrip line 5 on upper 2 outer surface of metal layer
There are two to ranked second metallization VIA 14, each first metallization VIA 13 and each second metallization VIA 14 from top to bottom according to
Secondary to pass through upper metal layer 2, medium substrate 1, lower metal layer 3,1 positive both sides of the edge of medium substrate are embedded in just successively from left to right
The first metal insert of face 7, positive second metal insert 8, positive third metal insert 9, the both sides of the edge at 1 back side of medium substrate by
Left-to-right is embedded in the first metal insert of the back side 10, the second metal insert of the back side 11, back side third metal insert 14 successively.
Specific embodiment two：Illustrate present embodiment with reference to Fig. 1 to Fig. 3, folded form half module base described in present embodiment
The thickness of the medium substrate 1 of piece integrated waveguide broad-band bandpass filter is 4.8mm, and relative dielectric constant is 4.2~4.5, upper gold
The thickness for belonging to layer 2 and lower metal layer 3 is 0.02~0.04mm, and the length of rectangular slab 1-1 is 92.5mm, rectangular slab 1-1
Width be 46mm, a diameter of 46mm of semicircular plate 1-2.
Present embodiment has the technical effect that：So set, wave filter can be caused to meet required electric parameter index
Under conditions of have smaller size.Other compositions and connection relation are same as the specific embodiment one.
Specific embodiment three：Illustrate present embodiment with reference to Fig. 1 to Fig. 3, folded form half module base described in present embodiment
The length of the first microstrip line of front 4 of piece integrated waveguide broad-band bandpass filter is 59mm, and the width of positive first microstrip line 4 is
10mm, positive second microstrip line 5 are made of trapezoidal and rectangle, and the long W1 of the rectangle is 21.7mm, and the wide L1 of the rectangle is
10mm, the trapezoidal long W2 in upper bottom are 16mm, and a length of 21.7mm in trapezoidal bottom, the trapezoidal high L2 are 5mm, are carried on the back
The length of the first microstrip line of face 6 is 59mm, and the width of the first microstrip line of the back side 6 is 10mm.
Present embodiment has the technical effect that：So set, wave filter can be made to obtain preferable impedance matching property, make
Its | S11| parameter value reduces.Other compositions and connection relation are same as the specific embodiment one.
Specific embodiment four：Illustrate present embodiment with reference to Fig. 1 to Fig. 3, folded form half module base described in present embodiment
First metallization VIA 13 of piece integrated waveguide broad-band bandpass filter and the radius of the second metallization VIA 14 are 0.3mm,
Centre-to-centre spacing between two neighboring first metallization VIA 13 is 1mm, the center between two neighboring second metallization VIA 14
Away from for 1mm.
Present embodiment has the technical effect that：It is arranged such, it is possible to reduce the leakage of the electromagnetic energy transmitted in wave filter,
Obtain higher | S21| parameter.Other compositions and connection relation are same as the specific embodiment one.
Specific embodiment five：Illustrate present embodiment with reference to Fig. 1 to Fig. 3, folded form half module base described in present embodiment
A length of 8mm of first metal insert 10 of piece integrated waveguide broad-band bandpass filter, the width of the first metal insert 10 is 2mm, the
The thickness of one metal insert 10 is 1.8mm, and a length of 10mm of the second metal insert 11, the width of the second metal insert 11 is 2mm, the
The thickness of two metal inserts 11 is 1.8mm, and a length of 10mm of third metal insert 12, the width of third metal insert 12 is 2mm, the
The thickness of three metal inserts 12 is 1.8mm, the distance between the first metal insert 10 and the second adjoining metal insert 11 J1
For 21mm, the distance between the second metal insert 11 and adjoining third metal insert 12 J2 are 22mm, third metal insert
The distance between 12 and 1 right end edge of medium substrate J3 are 11mm.
Present embodiment has the technical effect that：So set, can obtain best wave filter equivalent circuit inductance and
Capacitance.Other compositions and connection relation are same as the specific embodiment one.
Operation principle
The broadband bandpass characteristics of folded form half module substrate integrated wave guide broadband band-pass filter is mainly by half module base
Rectangular metal block is loaded on piece integrated waveguide to realize, half module substrate integrated wave guide is similar to traditional sucrose filling rectangular waveguide,
With high pass characteristic；And rectangular metal block is loaded with low-pass characteristic, therefore, the combination of the two will generate bandpass characteristics.
Claims (5)
1. folded form half module substrate integrated wave guide broadband band-pass filter, it is characterised in that：The folded form half-module chip integrates
Waveguide broad-band bandpass filter include medium substrate (1), upper metal layer (2), lower metal layer (3), positive first microstrip line (4),
Positive second microstrip line (5), the first microstrip line of the back side (6), two the first metal inserts of front (7), two the second metals of front
Abaculus (8), two positive third metal inserts (9), two the first metal inserts of the back side (10), two the second metal inserts of the back side
(11) and two back side third metal inserts (12), upper metal layer (2) and lower metal layer (3) are respectively printed at medium substrate (1)
Front and back, medium substrate (1) is made of rectangular slab (1-1) and semicircular plate (1-2), the right side of rectangular slab (1-1)
The vertical edge with semicircular plate (1-2) is held to link into an integrated entity, positive first microstrip line (4) is rectangle, positive first microstrip line
(4) middle part of metal layer (2) outer surface right end, and the short side of positive first microstrip line (4) right end and upper metal layer are printed on
(2) short side of right end overlaps, and positive second microstrip line (5) is printed on the left end of metal layer (2) outer surface, the first micro-strip of the back side
Line (6) is rectangle, and the first microstrip line of the back side (6) is printed on the middle part of lower metal layer (3) outer surface right end, upper metal layer (2)
Two long sides and left end short side of positive first microstrip line (4) of outer surface upper edge are laid with multiple first metallization VIAs
(13), two rows of the are equipped between the first microstrip line of front (4) on upper metal layer (2) outer surface and positive second microstrip line (5)
Two metallization VIAs (14), each first metallization VIA (13) and each second metallization VIA (14) are from top to bottom successively
Across upper metal layer (2), medium substrate (1), lower metal layer (3), medium substrate (1) positive both sides of the edge are from left to right successively
It is embedded in the first metal insert of front (7), positive second metal insert (8), positive third metal insert (9), medium substrate (1) back of the body
The both sides of the edge in face are embedded in the first metal insert of the back side (10), the second metal insert of the back side (11), the back side the successively from left to right
Three metal inserts (14).
2. folded form half module substrate integrated wave guide broadband band-pass filter according to claim 1, it is characterised in that：Medium base
The thickness of plate (1) is 4.8mm, and relative dielectric constant is 4.2~4.5, and the thickness of upper metal layer (2) and lower metal layer (3) is
0.02~0.04mm, the length of rectangular slab (1-1) are 92.5mm, and the width of rectangular slab (1-1) is 46mm, semicircular plate
A diameter of 46mm of (1-2).
3. folded form half module substrate integrated wave guide broadband band-pass filter according to claim 1, it is characterised in that：Front the
The length of one microstrip line (4) is 59mm, and the width of positive first microstrip line (4) is 10mm, and positive second microstrip line (5) is by trapezoidal
Composition is sequentially connected with rectangle head and the tail, and the length (W1) of the rectangle is 21.7mm, and the width (L1) of the rectangle is 10mm, the ladder
Shape upper bottom length (W2) be 16mm, a length of 21.7mm in trapezoidal bottom, the trapezoidal height (L2) be 5mm, the back side first
The length of microstrip line (6) is 59mm, and the width of the first microstrip line of the back side (6) is 10mm.
4. folded form half module substrate integrated wave guide broadband band-pass filter according to claim 1, it is characterised in that：First gold medal
Categoryization via (13) and the radius of the second metallization VIA (14) are 0.3mm, two neighboring first metallization VIA (13) it
Between centre-to-centre spacing for 1mm, the centre-to-centre spacing between two neighboring second metallization VIA (14) is 1mm.
5. folded form half module substrate integrated wave guide broadband band-pass filter according to claim 1, it is characterised in that：First gold medal
Belonging to a length of 8mm of abaculus (10), the width of the first metal insert (10) is 2mm, and the thickness of the first metal insert (10) is 1.8mm,
A length of 10mm of second metal insert (11), the width of the second metal insert (11) is 2mm, and the thickness of the second metal insert (11) is
1.8mm, a length of 10mm of third metal insert (12), the width of third metal insert (12) is 2mm, third metal insert (12)
Thickness is 1.8mm, and the distance between the first metal insert (10) and adjoining the second metal insert (11) (J1) they are 21mm, the
The distance between two metal inserts (11) and adjoining third metal insert (12) (J2) be 22mm, third metal insert (12)
The distance between medium substrate (1) right end edge (J3) is 11mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510560244.XA CN105206903B (en) | 2015-09-06 | 2015-09-06 | Folded form half module substrate integrated wave guide broadband band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510560244.XA CN105206903B (en) | 2015-09-06 | 2015-09-06 | Folded form half module substrate integrated wave guide broadband band-pass filter |
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| CN105206903A CN105206903A (en) | 2015-12-30 |
| CN105206903B true CN105206903B (en) | 2018-06-12 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2888662Y (en) * | 2006-01-26 | 2007-04-11 | 东南大学 | High-performance waveguide filter with integrated microwave/millimeter wave substrate |
| CN201156573Y (en) * | 2008-01-25 | 2008-11-26 | 南京理工大学 | Integrated wave-guide band filter based on foldable substrate |
| US20090066597A1 (en) * | 2007-09-07 | 2009-03-12 | Songnan Yang | Substrate Integrated Waveguide Antenna Array |
-
2015
- 2015-09-06 CN CN201510560244.XA patent/CN105206903B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2888662Y (en) * | 2006-01-26 | 2007-04-11 | 东南大学 | High-performance waveguide filter with integrated microwave/millimeter wave substrate |
| US20090066597A1 (en) * | 2007-09-07 | 2009-03-12 | Songnan Yang | Substrate Integrated Waveguide Antenna Array |
| CN201156573Y (en) * | 2008-01-25 | 2008-11-26 | 南京理工大学 | Integrated wave-guide band filter based on foldable substrate |
Non-Patent Citations (3)
| Title |
|---|
| Folded Substrate-Integrated Waveguide Out-of-Phase Power Divider;K. W. Eccleston;《IEEE》;20101010;1260-1263 * |
| 半模基片集成波导带通滤波器的设计;陶翀;《电子元器件应用》;20100430;第12卷(第4期);51-52,56 * |
| 基于基片集成波导技术的宽带带通滤波器的设计;王立娜;《中国优秀硕士学位论文全文数据库 信息科技辑》;20150215(第02期);I135-250 * |
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