CN105204251B - A kind of display base plate and preparation method thereof and display device - Google Patents
A kind of display base plate and preparation method thereof and display device Download PDFInfo
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- CN105204251B CN105204251B CN201510540512.1A CN201510540512A CN105204251B CN 105204251 B CN105204251 B CN 105204251B CN 201510540512 A CN201510540512 A CN 201510540512A CN 105204251 B CN105204251 B CN 105204251B
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of display base plate and preparation method thereof and display devices, influence display effect because the leaping voltage using pixel electrode caused by COA technology is excessive in the prior art to solve the problems, such as.The display base plate includes underlay substrate, the grid line, data line of arranged crosswise and the pixel unit arranged in arrays marked off by the grid line and the data line on the underlay substrate, and thin film transistor (TFT), pixel electrode, color film layer and public electrode wire are provided in each pixel unit；Wherein, at least one described pixel unit further includes the metal wire with the public electrode wire insulation set, the metal wire on orthographic projection direction at least partly with the public electrode line overlap.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of display base plate and preparation method thereof and display devices.
Background technique
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-
LCD) have the characteristics that small size, low power consumption, no radiation, developed by leaps and bounds in recent years, in current flat-panel monitor
Leading position is occupied in market.TFT-LCD is widely used on the product of various big-and-middle small sizes, is almost covered
The primary electron product of current information-intensive society, as LCD TV, high definition digital television, computer, mobile phone, car-mounted display,
Projection Display, video camera, digital camera, electronic watch, calculator, electronic instrument and meter, public display and illusory display etc..
TFT-LCD is made of liquid crystal display panel, driving circuit and backlight module, and liquid crystal display panel is TFT-LCD
Pith.In order to improve aperture opening ratio and reduce to box process difficulty, COA (Color Filter on is generally used at present
Array) technology prepares color layer to form the COA substrate for including thin film transistor (TFT) and chromatic filter layer in array substrate,
As shown in Figure 1.Fig. 1 is the structural schematic diagram of the COA substrate of the prior art, as shown in Figure 1, existing COA substrate includes substrate
Substrate 101, grid line 102, data line 103, thin film transistor (TFT) 104, color film layer 105, passivation layer 106 (see Fig. 2) and electrically conducting transparent
107 (see Fig. 2) of layer.
For the display panel of twisted nematic (Twist Nematic, TN) liquid crystal display mode, as shown in Fig. 2,
After the production for completing color film layer, in order to ensure display effect, color film layer can overlap with black matrix, and overlapping widths are about
7.5 μm, and since almost edging, color film layer understand covering part public electrode wire for public electrode wire 108 and black matrix, so that
The distance between transparency conducting layer and public electrode wire increase.According to the definition of capacitor it is found that transparency conducting layer and public electrode
When the distance between line increases, the coupled capacitor C between transparency conducting layer and public electrode wirestReduce, and then causes pixel electric
The jump variable Δ V of the leaping voltage of polepIncrease, influences display effect.
Summary of the invention
The embodiment of the invention provides a kind of display base plate and preparation method thereof and display devices, to solve the prior art
It is middle because the leaping voltage using pixel electrode caused by COA technology is excessive to influence display effect the problem of.
The embodiment of the invention provides a kind of display base plate, the display base plate includes underlay substrate, in the substrate base
The grid line, data line of arranged crosswise and the pixel list arranged in arrays marked off by the grid line and the data line on plate
Member is provided with thin film transistor (TFT), pixel electrode, color film layer and public electrode wire in each pixel unit；
At least one described pixel unit further includes the metal wire with the public electrode wire insulation set, the metal wire
On orthographic projection direction at least partly with the public electrode line overlap.
In display base plate provided in an embodiment of the present invention, including underlay substrate, the arranged crosswise on the underlay substrate
Grid line, data line and the pixel unit arranged in arrays marked off by the grid line and the data line, each picture
Thin film transistor (TFT), pixel electrode, color film layer and public electrode wire are provided in plain unit；At least one described pixel unit also wraps
Include the metal wire with the public electrode wire insulation set, the metal wire on orthographic projection direction at least partly with it is described public
Electrode line overlap so that the metal wire and the public electrode wire form compensating electric capacity, for compensate transparency conducting layer with
Coupled capacitor C between public electrode wirest, solve the existing coupled capacitor C because between transparency conducting layer and public electrode wirest
The jump variable Δ V of the leaping voltage of pixel electrode caused by reductionpThe problem of increase, improves the display effect of display panel.
Preferably, every two adjacent pixel unit constitutes a pixel unit group, and a pixel unit only corresponds to one
Pixel unit group；It is wherein respectively arranged with one above and below every one-row pixels unit group and provides grid for the pixel unit group
The grid line of pole signal；
In each pixel unit group, a pixel unit is driven by being located at the grid line above the pixel unit group, another
Pixel unit is driven by being located at the grid line below the pixel group.
Preferably, the metal wire is located at the top of the public electrode wire.
When the metal wire is located at the top of the public electrode wire, the metal wire and the public electrode can be increased
Positive area between line, so that the compensating electric capacity between metal wire and public electrode wire increases.Also, the metal wire is located at
When the top of the public electrode wire, it is electrically connected convenient for the metal wire with thin film transistor (TFT) or pixel electrode, so that the gold
Belong to line and pixel electrode current potential having the same, is formed and be used for so that the metal wire and the public electrode wire are formed and compensated
Capacitor, the coupled capacitor C for compensating, between transparency conducting layer and public electrode wirest。
Preferably, the thin film transistor (TFT) includes: the grid on the underlay substrate, it is located at grid above the grid
Insulating layer, the active layer above the insulating layer, the source electrode and drain electrode above the active layer, the public electrode
Line and the grid same layer are arranged, and the metal wire and the source electrode and drain electrode same layer are arranged.
During making display base plate, the public electrode wire and the grid same layer are arranged, by the metal
Line and the source electrode and drain electrode same layer are arranged, and the public electrode wire and the grid can be formed by one-time process, and
The metal wire and the source electrode and drain electrode are formed by one-time process, not only contributes to simplify preparation process, can also shorten
Fabrication cycle improves production efficiency, reduces production cost.
Preferably, the metal wire is electrically connected with the drain electrode.
When the metal wire is electrically connected with the drain electrode, so that the metal wire can get electricity identical with pixel electrode
Compensating electric capacity is collectively formed with public electrode wire in position, eliminates influence of the COA technology to the leaping voltage of pixel electrode.
Preferably, the wire insulation of two adjacent pixel units is arranged in each pixel unit group.
In each pixel unit group, the wire insulation of two adjacent pixel units is arranged, so that each pixel
The compensating electric capacity of unit is only related with the driving voltage of pixel electrode in this pixel unit, is conducive to the accuracy for improving compensation,
Mention high display quality.
Based on the same inventive concept, the embodiment of the invention also provides a kind of display device, the display device includes such as
The upper display base plate.
Based on the same inventive concept, the embodiment of the invention also provides a kind of production method of display base plate, the methods
Include the steps that forming data line on underlay substrate, scan line, color film layer, pixel electrode and public electrode wire and form film
The step of transistor, the coloured silk film layer, pixel electrode, public electrode wire and thin film transistor (TFT) be both formed in the scan line and
In multiple pixel units that data line surrounds；The method also includes forming the step with the metal wire of public electrode wire insulation
Suddenly, the metal wire on orthographic projection direction at least partly with the public electrode line overlap.
The production method of the display base plate provided through the embodiment of the present invention is formed by display base plate, including substrate base
Plate the grid line, data line of arranged crosswise and by what the grid line and the data line marked off is on the underlay substrate
The pixel unit of matrix arrangement is provided with thin film transistor (TFT), pixel electrode, color film layer and common electrical in each pixel unit
Polar curve；The pixel unit further includes the metal wire with the public electrode wire insulation set, and the metal wire is in orthographic projection side
Upwards at least partly with the public electrode line overlap so that the metal wire and the public electrode wire form compensation electricity
Hold, the coupled capacitor C for compensating, between transparency conducting layer and public electrode wirest, solve it is existing because transparency conducting layer with it is public
Coupled capacitor C between electrode wiresstThe jump variable Δ V of the leaping voltage of pixel electrode caused by reductionpThe problem of increase, mentions
The display effect of high display panel.
Preferably, every two adjacent pixel unit constitutes a pixel unit group, and a pixel unit only corresponds to one
Pixel unit group；It is wherein respectively arranged with one above and below every one-row pixels unit group and provides grid for the pixel unit group
The grid line of pole signal；
In each pixel unit group, a pixel unit is driven by being located at the grid line above the pixel unit group, another
Pixel unit is driven by being located at the grid line below the pixel group.
For the display base plate of double-gate structure, the region among each pixel unit group is not provided with data line, because
The region part between two pixel units can be arranged in the metal wire by this, allow the metal wire and the source electrode
With it is described drain electrode simultaneously make, and then shorten fabrication cycle, reduction production cost.
Preferably, the step of formation thin film transistor (TFT), includes:
The figure including grid is formed on the underlay substrate；
Gate insulation layer is formed on the substrate of the figure including grid；
The figure including active layer is formed on the substrate for including the gate insulation layer；
The figure including source electrode and drain electrode is formed on the substrate of the figure including active layer.
In the method for above-mentioned formation thin film transistor (TFT), the public electrode wire and the grid line same layer are arranged, by institute
It states metal wire and the source electrode and drain electrode same layer is arranged, be conducive to simplify preparation process, also shortening fabrication cycle, improve production effect
Rate reduces production cost.
Preferably, the method specifically includes:
The figure including grid and public electrode wire is formed on the underlay substrate；
Gate insulation layer is formed on the substrate of the figure including grid and public electrode wire；
The figure including active layer is formed on the substrate for including the gate insulation layer；
The figure including source electrode, drain electrode and metal wire is formed on the substrate of the figure including active layer；
The figure including color film layer is formed on the substrate of the figure including source electrode, drain electrode and metal wire；
The figure including pixel electrode is formed on the substrate for including the figure of color film layer.
Preferably, before forming the figure including pixel electrode, the method also includes:
Passivation layer is formed on the substrate for including the figure of color film layer.
By forming passivation layer on the substrate for including the figure of color film layer, color film layer and film crystal can protect
Pipe avoids being destroyed in subsequent preparation process, is conducive to improve display effect.
Detailed description of the invention
Fig. 1 is the top plan view of display base plate in the prior art；
Fig. 2 is the sectional structure chart in the direction A-A ' along Fig. 1；
Fig. 3 is the top plan view for the display base plate that the embodiment of the present invention one provides；
Fig. 4 is the sectional structure chart in the direction D-D ' along Fig. 3；
Fig. 5-Fig. 9 is the flow diagram of production display base plate provided by Embodiment 2 of the present invention.
Specific embodiment
The embodiment of the invention provides a kind of display base plate and preparation method thereof and display devices, to solve the prior art
It is middle because the leaping voltage using pixel electrode caused by COA technology is excessive to influence display effect the problem of.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention one provides a kind of display base plate, and ginseng is seen figures 3 and 4；It can be seen that in conjunction with Fig. 3 and Fig. 4 described
Display base plate includes underlay substrate 31, the grid line 32, data line 33 of arranged crosswise and by described on the underlay substrate 31
The pixel unit arranged in arrays that grid line 32 and the data line 33 mark off is provided with film in each pixel unit
Transistor 34, pixel electrode 35 (see Fig. 4), color film layer 36 and public electrode wire 37；
At least one described pixel unit further includes the metal wire 38 with 37 insulation set of public electrode wire, the gold
It is at least partly Chong Die with the public electrode wire 37 on orthographic projection direction to belong to line 38.
In display base plate provided in an embodiment of the present invention, including underlay substrate, the arranged crosswise on the underlay substrate
Grid line, data line and the pixel unit arranged in arrays marked off by the grid line and the data line, each picture
Thin film transistor (TFT), pixel electrode, color film layer and public electrode wire are provided in plain unit；At least one described pixel unit also wraps
Include the metal wire with the public electrode wire insulation set, the metal wire on orthographic projection direction at least partly with it is described public
Electrode line overlap so that the metal wire and the public electrode wire form compensating electric capacity, for compensate transparency conducting layer with
Coupled capacitor C between public electrode wirest, solve the existing coupled capacitor C because between transparency conducting layer and public electrode wirest
The jump variable Δ V of the leaping voltage of pixel electrode caused by reductionpThe problem of increase, improves the display effect of display panel.
It can also be seen that the display base plate that the embodiment of the present invention one provides is the display base plate of double-gate structure from Fig. 3,
In, every two adjacent pixel unit constitutes a pixel unit group, and a pixel unit only corresponds to a pixel unit group；Its
In be respectively arranged with one above and below every one-row pixels unit group and provide the grid line of grid signal for the pixel unit group；
In each pixel unit group, a pixel unit is driven by being located at the grid line above the pixel unit group, another
Pixel unit is driven by being located at the grid line below the pixel group.
For the display base plate of double-gate structure, the region among each pixel unit group is not provided with data line, because
The region part between two pixel units can be arranged in the metal wire 38 by this, allow the metal wire and the source
Pole and it is described drain electrode simultaneously make, and then shorten fabrication cycle, reduction production cost.
Further, the metal wire 38 is located at the top of the public electrode wire 37.
When the metal wire is located at the top of the public electrode wire, the metal wire and the public electrode can be increased
Positive area between line, so that the compensating electric capacity between metal wire and public electrode wire increases.Also, the metal wire is located at
When the top of the public electrode wire, it is electrically connected convenient for the metal wire with thin film transistor (TFT) or pixel electrode, so that the gold
Belong to line and pixel electrode current potential having the same, is formed and be used for so that the metal wire and the public electrode wire are formed and compensated
Capacitor, the coupled capacitor C for compensating, between transparency conducting layer and public electrode wirest。
In the embodiment of the present invention, the thin film transistor (TFT) 34 includes: that the grid on the underlay substrate (is not shown in figure
Show), it is located at gate insulation layer 42 above the grid, the active layer (not shown) above the gate insulation layer 42, position
Source electrode (not shown) and drain electrode (not shown) above the active layer；Wherein, the public electrode wire 37 with
The grid same layer setting, the metal wire and the source electrode and drain electrode same layer are arranged.
Therefore, during making display base plate, the public electrode wire and the grid same layer are arranged, it will be described
Metal wire and the source electrode and drain electrode same layer are arranged, and the public electrode wire and the grid can be formed by one-time process,
And the metal wire and the source electrode and drain electrode are formed by one-time process, and it not only contributes to simplify preparation process, it can be with
Shorten fabrication cycle, improve production efficiency, reduces production cost.Also, the public electrode wire and the grid same layer are set
It sets, when the metal wire and the source electrode and drain electrode same layer are arranged, due to there was only grid between metal wire and the public electrode wire
Insulating layer exists, and spacing is smaller, so there are can obtain biggish capacitor when lesser overlapping area for the two.Therefore, this hair
Graph thinning design can be used in public electrode wire in bright embodiment, and since the display base plate uses COA technology without consideration pair
Box offset problem, black matrix can be narrowed with the refinement of public electrode wire, therefore can also be before not influencing display effect
It puts and further increases aperture opening ratio.
Further, the metal wire 38 uses identical making material with the source electrode and drain electrode, and now in process one
As the material selected be non-transparent metals and its alloys such as Cr, W, Ti, Ta, Mo, Al, Cu.
Further, the metal wire 38 is electrically connected with the drain electrode.
When the metal wire 38 is electrically connected with the drain electrode, so that the metal wire 38 can get and 35 phase of pixel electrode
Compensating electric capacity is collectively formed with public electrode wire 37 in same current potential, eliminates COA technology to the shadow of the leaping voltage of pixel electrode
It rings.
Further, in each pixel unit group, 38 insulation set of metal wire of two adjacent pixel units.
By the wire insulation setting to two pixel units adjacent in each pixel unit group, so that each
The compensating electric capacity of pixel unit is only related with the driving voltage of pixel electrode in this pixel unit, is conducive to improve the accurate of compensation
Degree, mentions high display quality.
Further, in order to protect color film layer to avoid being destroyed in subsequent preparation process, the aobvious of display base plate is improved
Show effect, the display base plate further includes that passivation layer 39 above the color film layer, for protecteding from destruction is arranged in.
Also, in order to enable being that the pixel electrode 35 provides driving signal by thin film transistor (TFT), in pixel in the passivation layer 39
The position corresponding with the drain electrode of electrode 35 is provided with via hole (not shown), so that the pixel electrode 35 and the film
The drain electrode of transistor is electrically connected；In addition, the passivation layer 39 can be with protective film transistor damage.
Based on the same inventive concept, the embodiment of the present invention two additionally provides a kind of production method of display base plate, the side
Method includes:
Formed data line on underlay substrate, scan line, pixel electrode and the step of public electrode wire and to form film brilliant
The step of body pipe, the pixel electrode, public electrode wire and thin film transistor (TFT) have been both formed in the scan line and data line encloses
At multiple pixel units；The method also includes forming the metal wire with public electrode wire insulation, the gold
Belong to line on orthographic projection direction at least partly with the public electrode line overlap.
Further, every two adjacent pixel unit constitutes a pixel unit group, and a pixel unit only corresponds to one
A pixel unit group；Wherein one is respectively arranged with above and below every one-row pixels unit group to provide for the pixel unit group
The grid line of grid signal；
In each pixel unit group, a pixel unit is driven by being located at the grid line above the pixel unit group, another
Pixel unit is driven by being located at the grid line below the pixel group.
For the display base plate of double-gate structure, the region among each pixel unit group is not provided with data line, because
The region part between two pixel units can be arranged in the metal wire by this, allow the metal wire and the source electrode
With it is described drain electrode simultaneously make, and then shorten fabrication cycle, reduction production cost.
Wherein, the step of formation thin film transistor (TFT) specifically includes:
The figure including grid is formed on the underlay substrate；
Gate insulation layer is formed on the substrate of the figure including grid；
The figure including active layer is formed on the substrate for including the gate insulation layer；
The figure including source electrode and drain electrode is formed on the substrate of the figure including active layer.
In the method for above-mentioned formation thin film transistor (TFT), the public electrode wire and the grid line same layer are arranged, by institute
It states metal wire and the source electrode and drain electrode same layer is arranged, be conducive to simplify preparation process, also shortening fabrication cycle, improve production effect
Rate reduces production cost.Also, by the public electrode wire and grid same layer setting, the metal wire and the source electrode
When with drain electrode same layer setting, due to only having gate insulation layer to exist between metal wire and the public electrode wire, spacing is smaller, so
There are biggish capacitor can be obtained when lesser overlapping area for the two.Therefore, the public electrode wire in the embodiment of the present invention can
Designed using graph thinning, and due to the display base plate using COA technology without considering to box offset problem, black matrix can be with
The refinement of public electrode wire narrows, therefore aperture opening ratio can also be further increased under the premise of not influencing display effect.
Further, before forming the figure including pixel electrode, the method also includes:
Passivation layer is formed on the substrate for including the figure of color film layer.
By forming passivation layer on the substrate for including the figure of color film layer, color film layer can protect in subsequent system
Standby process avoids being destroyed, and is conducive to improve display effect.
By taking the display base plate provided in the embodiment of the present invention one as an example, made using method provided by the present invention described aobvious
Show that the method for substrate specifically includes:
The first step is formed including grid (not showing in Fig. 5), grid line (in Fig. 5 not referring to Fig. 5 in the underlay substrate 31
Display) and public electrode wire 37 figure；The step specifically includes:
One layer is formed and (such as sputtered or coat) on underlay substrate 31 is used to form grid, grid line and public electrode wire 37
Metallic film；Then, a layer photoresist is coated on metallic film；Then, with being provided with including grid, grid line and common electrical
The mask plate of the figure of polar curve is exposed photoresist；Being formed after last developed, etching includes grid, grid line and common electrical
The figure of polar curve.In the production method of the present embodiment display base plate, it is related to the production work of the film layer formed by patterning processes
Skill is identical with this, and is hereafter no longer described in detail.
In the present invention, patterning processes can only include photoetching process, or, including photoetching process and etch step, simultaneously
It can also include other techniques for being used to form predetermined pattern such as printing, ink-jet；Photoetching process refers to including film forming, exposure, shows
The technique for forming figure using photoresist, mask plate, exposure machine etc. of the technical process such as shadow.Can according to the present invention formed in
The corresponding patterning processes of structure choice.
Second step, referring to Fig. 6, the deposited silicon nitride on the substrate of the figure including grid and public electrode wire 37
(SiNx) or silica (SiOx) layer, form gate insulation layer 42.
Third step forms the figure including active layer on the substrate for including the gate insulation layer 42；The step is specifically wrapped
It includes:
By plasma enhanced chemical vapor deposition method or other similar method, formed in the top of gate insulation layer 42 non-
Layer polycrystal silicon film, then by technical process such as laser annealing technique or solid phase crystallizations, so that recrystallized amorphous silicon, forms
Layer polysilicon film, and the figure comprising low-temperature polysilicon silicon active layer is formed by patterning processes processing；The figure of the active layer
Shape is formed on the gate insulation layer 42.
4th step deposits a metal layer on the substrate of the figure including active layer, then passes through structure referring to Fig. 7
Figure process forms the figure including source electrode, drain electrode and metal wire 38.
5th step, referring to Fig. 8, being formed on the substrate of the figure including source electrode, drain electrode and metal wire 38 includes coloured silk
The figure of film layer 36.
6th step forms passivation layer 39 on the substrate for including the figure of color film layer 36 referring to Fig. 9, and passes through structure
Figure technique forms via hole in the pixel electrode 35 position corresponding with the drain electrode, so that the pixel electrode 35 and the leakage
Pole electrical connection.
It is conductive to deposit indium oxide layer tin transparent using magnetron sputtering method referring to fig. 4 on passivation layer 39 for 7th step
Film, and by patterning processes, i.e., after coated photoresist and exposure development, then after carrying out wet etching, removing, being formed includes pixel
The figure of electrode 35；Filled with the conductive material for being used to form the pixel electrode in the via hole, the pixel electrode 35 is logical
The via hole is crossed to be electrically connected with drain electrode.
Based on above-mentioned same inventive concept, the embodiment of the invention also provides a kind of display device, the display device packet
Include above-mentioned display base plate.
In conclusion the display base plate includes lining the embodiment of the invention provides a kind of display base plate and display device
Substrate the grid line, data line of arranged crosswise and is marked off on the underlay substrate by the grid line and the data line
Pixel unit arranged in arrays, thin film transistor (TFT), pixel electrode, color film layer and public affairs are provided in each pixel unit
Common-battery polar curve；The pixel unit further includes the metal wire with the public electrode wire insulation set, and the metal wire is just being thrown
It is at least partly compensated with the public electrode line overlap so that the metal wire is formed with the public electrode wire on shadow direction
Capacitor, the coupled capacitor C for compensating, between transparency conducting layer and public electrode wirest, solve existing because of transparency conducting layer and public
Coupled capacitor C between common-battery polar curvestThe jump variable Δ V of the leaping voltage of pixel electrode caused by reductionpThe problem of increase,
Improve the display effect of display panel.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (5)
1. a kind of display base plate, the display base plate include underlay substrate, on the underlay substrate arranged crosswise grid line, number
According to line and the pixel unit arranged in arrays marked off by the grid line and the data line, which is characterized in that the picture
Plain unit is provided with thin film transistor (TFT), pixel electrode, color film layer and public electrode wire；
At least one described pixel unit further includes the metal wire with the public electrode wire insulation set, and the metal wire is just
On projecting direction at least partly with the public electrode line overlap；
Every two adjacent pixel unit constitutes a pixel unit group, and a pixel unit only corresponds to a pixel unit group；
It is wherein respectively arranged with one above and below every one-row pixels unit group and provides the grid of grid signal for the pixel unit group
Line；
In each pixel unit group, a pixel unit is driven by being located at the grid line above the pixel unit group, one other pixel
Unit is driven by being located at the grid line below the pixel group；
In each pixel unit group, the wire insulation of two adjacent pixel units is arranged.
2. display base plate as described in claim 1, which is characterized in that the metal wire is located at the upper of the public electrode wire
Side.
3. display base plate as described in claim 1, the thin film transistor (TFT) includes: the grid on the underlay substrate,
The gate insulation layer above the grid, the active layer above the insulating layer, the source electrode above the active layer
And drain electrode, which is characterized in that
The public electrode wire and the grid same layer are arranged, and the metal wire and the source electrode and drain electrode same layer are arranged.
4. display base plate as claimed in claim 3, which is characterized in that the metal wire is electrically connected with the drain electrode.
5. a kind of display device, which is characterized in that the display device includes aobvious as described in any claim of Claims 1 to 4
Show substrate.
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| CN201510540512.1A CN105204251B (en) | 2015-08-28 | 2015-08-28 | A kind of display base plate and preparation method thereof and display device |
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| CN105204251B true CN105204251B (en) | 2019-07-02 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102937767A (en) * | 2012-10-29 | 2013-02-20 | 北京京东方光电科技有限公司 | Array substrate, display device and manufacturing method of array substrate |
| CN102981333A (en) * | 2012-11-21 | 2013-03-20 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device thereof |
| CN103178082A (en) * | 2011-12-21 | 2013-06-26 | 乐金显示有限公司 | Display device and method for manufacturing the same |
| CN104714345A (en) * | 2015-04-08 | 2015-06-17 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, liquid crystal display panel and display device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178082A (en) * | 2011-12-21 | 2013-06-26 | 乐金显示有限公司 | Display device and method for manufacturing the same |
| CN102937767A (en) * | 2012-10-29 | 2013-02-20 | 北京京东方光电科技有限公司 | Array substrate, display device and manufacturing method of array substrate |
| CN102981333A (en) * | 2012-11-21 | 2013-03-20 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device thereof |
| CN104714345A (en) * | 2015-04-08 | 2015-06-17 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, liquid crystal display panel and display device |
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