CN105203393A - LED chip anti-fracture strength testing method and device - Google Patents
LED chip anti-fracture strength testing method and device Download PDFInfo
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- CN105203393A CN105203393A CN201510602379.8A CN201510602379A CN105203393A CN 105203393 A CN105203393 A CN 105203393A CN 201510602379 A CN201510602379 A CN 201510602379A CN 105203393 A CN105203393 A CN 105203393A
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Abstract
The invention provides an LED chip anti-fracture strength testing method and device. The LED chip anti-fracture strength testing device comprises a long-strip-shaped LED chip sample, a testing die shaped like a Chinese character 'ao', an objective table, a push-pull force testing machine and a push-type broach. The LED chip stretches across an opening of the testing die shaped like the Chinese character 'ao', the testing die shaped like the Chinese character 'ao' is fixed to the center of the objective table, and the push-pull force testing machine controls the push-type broach to be in the middle and perpendicular to upper surface of an LED chip for applying downward pressure, so that three-point bending is achieved through a push-type broach single-shaft loading mode. By means of the LED chip anti-fracture strength testing method and device, the possible stress situation of the chip under different packing conditions can be simulated relatively truly, anti-fracture performance comparison of chips of different sizes is achieved, and monitoring of consistency of anti-fracture strength among the same type of chips is achieved.
Description
Technical field
The present invention relates to the performance test of LED chip, particularly relate to method of testing and the proving installation thereof of LED chip Resisting fractre intensity.
Background technology
In recent years, the application of LED chip widely, along with technology alteration and the LED chip size design thin-long in changes in market demand, encapsulation market, make in LED application end, chip fracture more easily to occur at present abnormal, affect encapsulating products yield and client's experience effect.Therefore demand chip manufacturing end screening Resisting fractre ability relatively preferably core grain shipment package application end, but there is no in LED field at present can the method for testing of effective monitoring LED core particle Resisting fractre ability and proving installation thereof.
Summary of the invention
There is for reducing LED application end the probability that LED chip ruptures, being necessary to set up monitoring, Filtering system, according to the encapsulation market demand, for same money core grain, screening break resistance more excellent core grain shipment potted ends.
The object of the invention is to: a kind of method of testing and the proving installation thereof that can test LED chip Resisting fractre intensity are provided.
For solving above technical matters, the technical scheme that the present invention adopts is: the method for testing providing a kind of LED chip Resisting fractre intensity, comprises the following steps:
A () gets out the LED chip of strip as sample, " recessed " font testing mould, objective table, pushing and drawing force testing machine and push broach;
B described LED chip is placed on described " recessed " font testing mould by (), make LED chip be across on the opening of " recessed " font testing mould;
C described " recessed " font testing mould is fixed on the center of described objective table by (), operate described pushing and drawing force testing machine, adjustment push broach centered vertical is in LED chip upper surface, and load downforce, LED chip upper surface is under pressure, and when load reaches certain value, chip surface can produce destruction, cause chip fracture, thus measure applying power F value needed for chip fracture;
D F value that step (c) is measured by () substitutes into formula model σ
f=3FL/2bh
2, wherein σ
ffor bending stress or bending strength; F is maximum load or fracture bending load; L is the aperture pitch of " recessed " font testing mould; B is the minor face width of LED chip; H is the thickness of LED chip;
E (), by above-mentioned steps, can calculate the bending strength σ of LED chip
f.
Preferably, the aperture pitch of described " recessed " font testing mould is less than the long hem width degree of described LED chip.
Preferably, the material of described push broach requires to be greater than 23MPa for mechanical hardness, and bending resistance and compressive strength are greater than 500MPa, avoid the impaired exception of push broach in push broach use procedure.
Preferably, described push broach can select alloy steel material or composite ceramic material or GaN material.
Preferably, the point of a knife position diameter of described push broach is less than or equal to the minor face width of described LED chip.
Preferably, the point of a knife position diameter of described push broach is 4 ~ 6mil.
For solving the problems of the technologies described above, another technical solution used in the present invention is: the proving installation providing a kind of LED chip Resisting fractre intensity, comprise the LED chip sample of strip, " recessed " font testing mould, objective table, pushing and drawing force testing machine and push broach, described LED chip is across on the opening of " recessed " font testing mould, described " recessed " font testing mould is fixed on the center of described objective table, described pushing and drawing force testing machine controls push broach centered vertical and applies downforce in LED chip upper surface, thus by push broach uniaxial loading mode, realize three-point bending.
Preferably, the aperture pitch of described " recessed " font testing mould is less than the long hem width degree of described LED chip.
Preferably, the material of described push broach requires to be greater than 23MPa for mechanical hardness, and bending resistance and compressive strength are greater than 500MPa, avoid the impaired exception of push broach in push broach use procedure.
Preferably, described push broach can select alloy steel material or composite ceramic material or GaN material.
Preferably, the point of a knife position diameter of described push broach is less than or equal to the minor face width of described LED chip.
Preferably, the point of a knife position diameter of described push broach is 4 ~ 6mil.
The present invention includes following beneficial effect: due in LED chip manufacturing process by different manufacturing procedures, different introduced stress may be had, therefore the Resisting fractre intensity level tested after making chip can there is some difference, the present invention is according to lying against on " recessed " font testing mould by LED chip, can the stressing conditions possible under difference encapsulation condition of true analog chip, as the break resistance comparison of different size chip, and with the monitoring of money chip chamber Resisting fractre strength consistency.Chip manufacturing end can be set up according to the present invention and draw schizogenesis production. art stability monitoring mechanism, screens the preferably core grain shipment of anti-thrust magnitude, effectively can reduce package application end and occur core grain phenomenon of rupture.The present invention has good application and development prospect, contributes to the development enriching LED chip and microspecimen mechanics performance testing technology and promotion dependence test equipment.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for instructions, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is proving installation structural representation of the present invention.
Fig. 2 is the stressed schematic diagram of test process chip of the LED chip Resisting fractre intensity of embodiment 2.
Fig. 3 is the stressed schematic diagram of test process chip of the LED chip Resisting fractre intensity of embodiment 3.
Indicate in figure: 1:LED chip; 2: testing mould; 3: objective table; 4: pushing and drawing force testing machine; 5: push broach.
Embodiment
Be described in detail the present invention below in conjunction with schematic diagram, to the present invention, how application technology means solve technical matters whereby, and the implementation procedure reaching technique effect can fully understand and implement according to this.It should be noted that, only otherwise form conflict, each embodiment in the present invention and each feature in each embodiment can be combined with each other, and the technical scheme formed is all within protection scope of the present invention.
embodiment 1
Refer to Fig. 1, the present embodiment provides a kind of proving installation of LED chip Resisting fractre intensity, comprise the LED chip 1 of strip as sample, " recessed " font testing mould 2, objective table 3, pushing and drawing force testing machine 4 and push broach 5, described LED chip 1 is across on the opening of " recessed " font testing mould 2, described " recessed " font testing mould 2 is fixed on the center of described objective table 3, described pushing and drawing force testing machine 4 controls push broach 5 centered vertical and applies downforce in LED chip 1 upper surface, thus by push broach uniaxial loading mode, realize three-point bending.
In above-mentioned proving installation, because strip LED chip is generally micron order chip, therefore require that testing mould material has relatively high compactness, can high precision control during to guarantee Mold Making.
In above-mentioned proving installation, the material of described push broach requires to be greater than 23MPa for mechanical hardness, and bending resistance and compressive strength are greater than 500MPa, can select alloy steel material, as bearing steel, X
42cr
13(stainless steel), X
36crMo
17(pre-hard stainless steel) and X
45niCrMo
4(serial cold-working steel); Or composite ceramic material, as ZrB
2-SiC based composite ceramic material; Or GaN material, avoid the impaired exception of push broach in push broach use procedure.More preferably, Mold Making material requirements has good high-temperature wearable and antioxygenic property.
In above-mentioned proving installation, the aperture pitch of described " recessed " font testing mould is less than the long hem width degree of described LED chip.
In above-mentioned proving installation, the point of a knife position diameter of described push broach is 4 ~ 6mil, is less than or equal to the minor face width of described LED chip.
" recessed " font testing mould in above-mentioned proving installation, the pushing and drawing force testing machine of the XYZTECCondorSigma model in the market of can arranging in pairs or groups, measure the critical pressure value of the Resisting fractre of chip simply, assess the break resistance comparison of different chip, and with the monitoring of money core intergranular strength consistency.
embodiment 2
Refer to Fig. 1 and Fig. 2, the present embodiment provides a kind of method of testing of LED chip Resisting fractre intensity, comprises the following steps:
A () prepares wide × length × high size and is respectively the push broach 5 that the objective table 3 of LED chip 1 as sample, " recessed " font testing mould 2, XYZTECCondorSigma model of 10mil × 30mil × 4.7mil, pushing and drawing force testing machine 4 and point of a knife position diameter are 4 ~ 6mil;
B described LED chip is placed on described " recessed " font testing mould by (), LED chip is made to be across on the opening of " recessed " font testing mould, for the ease of lying against on testing mould by LED chip, the aperture pitch of preferred testing mould is less than the long hem width degree of LED chip;
C described " recessed " font testing mould is fixed on the center of described objective table by (), operate described pushing and drawing force testing machine, adjustment push broach centered vertical is in LED chip upper surface, and load downforce, LED chip upper surface is under pressure, when load reaches certain value, chip surface can produce destruction, cause chip fracture, thus measure applying power F value needed for chip fracture, for the ease of push broach applied thrust, the point of a knife position diameter of preferred push broach is less than or equal to the minor face width of described LED chip;
D F value that step (c) is measured by () substitutes into formula model σ
f=3FL/2bh
2, wherein σ
ffor bending stress or bending strength; F is maximum load or fracture bending load; L is the aperture pitch of " recessed " font testing mould; B is the minor face width of LED chip; H is the thickness of LED chip;
E (), by above-mentioned steps, can calculate the bending strength σ of LED chip
f, different scribing board for confirmation operation, on the impact of chip Resisting fractre intensity, is beneficial to improvement and monitoring chip manufacture craft.
Because LED chip stressed meeting in encapsulation process is variant, therefore judge that chip thrust control value needs according to package requirements setting screening, according to practical experience value, the minimum control value of LED chip thrust of 10mil × 30mil × 4.7mil is 200g, monitors the Resisting fractre intensity of LED chip with this.But for the correlativity of the chip stressing conditions of different size in different package application demands and encapsulation process, in actual test, control lower limit corresponding thereto can be made according to package requirements.
embodiment 3
As shown in Figure 3, distinguish be with embodiment 2, the testing mould 2 of the present embodiment comprises two pieces of tool projections at regular intervals, and a part for itself and objective table 3 forms " recessed " font testing mould.The spacing of aforementioned projection forms opening, and its size is less than the long hem width degree of LED chip, makes projection be enough to support LED chip.
In sum, the present invention utilizes uniaxial loading power three-point bending method to test LED chip Resisting fractre intensity, can as the break resistance comparison of different size chip, and with the monitoring of money core intergranular strength consistency.LED chip manufacture end can be set up according to this invention and draw schizogenesis production. art stability monitoring mechanism, screens the preferably core grain shipment of anti-thrust magnitude, effectively can reduce package application end and occur core grain phenomenon of rupture.The present invention has good application and development prospect, contributes to the development enriching LED chip and microspecimen mechanics performance testing technology and promotion dependence test equipment.
Claims (10)
1. a method of testing for LED chip Resisting fractre intensity, comprises the following steps:
A () gets out the LED chip of strip as sample, " recessed " font testing mould, objective table, pushing and drawing force testing machine and push broach;
B described LED chip is placed on described " recessed " font testing mould by (), make LED chip be across on the opening of " recessed " font testing mould;
C described " recessed " font testing mould is fixed on the center of described objective table by (), operate described pushing and drawing force testing machine, adjustment push broach centered vertical is in LED chip upper surface, and load downforce, LED chip upper surface is under pressure, and when load reaches certain value, chip surface can produce destruction, cause chip fracture, thus measure applying power F value needed for chip fracture;
D F value that step (c) is measured by () substitutes into formula model σ
f=3FL/2bh
2, wherein σ
ffor bending stress or bending strength; F is maximum load or fracture bending load; L is the aperture pitch of " recessed " font testing mould; B is the minor face width of LED chip; H is the thickness of LED chip;
E (), by above-mentioned steps, can calculate the bending strength σ of LED chip
f.
2. the method for testing of a kind of LED chip Resisting fractre intensity according to claim 1, is characterized in that: the aperture pitch of described " recessed " font testing mould is less than the long hem width degree of described LED chip.
3. the method for testing of a kind of LED chip Resisting fractre intensity according to claim 1, is characterized in that: the material of described push broach requires to be greater than 23MPa for mechanical hardness, and bending resistance and compressive strength are greater than 500MPa.
4. the method for testing of a kind of LED chip Resisting fractre intensity according to claim 1, is characterized in that: the point of a knife position diameter of described push broach is less than or equal to the minor face width of described LED chip.
5. the method for testing of a kind of LED chip Resisting fractre intensity according to claim 1, is characterized in that: the point of a knife position diameter of described push broach is 4 ~ 6mil.
6. the proving installation of a LED chip Resisting fractre intensity, comprise the LED chip sample of strip, " recessed " font testing mould, objective table, pushing and drawing force testing machine and push broach, described LED chip is across on the opening of " recessed " font testing mould, described " recessed " font testing mould is fixed on the center of described objective table, described pushing and drawing force testing machine controls push broach centered vertical and applies downforce in LED chip upper surface, thus by push broach uniaxial loading mode, realize three-point bending.
7. the proving installation of a kind of LED chip Resisting fractre intensity according to claim 6, is characterized in that: the aperture pitch of described " recessed " font testing mould is less than the long hem width degree of described LED chip.
8. the proving installation of a kind of LED chip Resisting fractre intensity according to claim 6, is characterized in that: the material of described push broach requires to be greater than 23MPa for mechanical hardness, and bending resistance and compressive strength are greater than 500MPa.
9. the proving installation of a kind of LED chip Resisting fractre intensity according to claim 6, is characterized in that: the point of a knife position diameter of described push broach is less than or equal to the minor face width of described LED chip.
10. the proving installation of a kind of LED chip Resisting fractre intensity according to claim 6, is characterized in that: the point of a knife position diameter of described push broach is 4 ~ 6mil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510602379.8A CN105203393A (en) | 2015-09-21 | 2015-09-21 | LED chip anti-fracture strength testing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510602379.8A CN105203393A (en) | 2015-09-21 | 2015-09-21 | LED chip anti-fracture strength testing method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105203393A true CN105203393A (en) | 2015-12-30 |
Family
ID=54951191
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|---|---|---|---|
| CN201510602379.8A Pending CN105203393A (en) | 2015-09-21 | 2015-09-21 | LED chip anti-fracture strength testing method and device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106289970A (en) * | 2016-07-28 | 2017-01-04 | 大唐微电子技术有限公司 | A kind of chip external force resistance test device and method of testing thereof |
| CN112630048A (en) * | 2020-11-20 | 2021-04-09 | 长江存储科技有限责任公司 | Strength measuring method and sample |
| CN114034540A (en) * | 2021-06-21 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Chip performance testing method and device |
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| EP1593953A2 (en) * | 2004-04-29 | 2005-11-09 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Process and device for examination of fibers |
| JP2010085139A (en) * | 2008-09-30 | 2010-04-15 | Hitachi Ltd | Thin-film testing device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106289970A (en) * | 2016-07-28 | 2017-01-04 | 大唐微电子技术有限公司 | A kind of chip external force resistance test device and method of testing thereof |
| CN106289970B (en) * | 2016-07-28 | 2019-11-29 | 大唐微电子技术有限公司 | A kind of chip external force resistance test device and its test method |
| CN112630048A (en) * | 2020-11-20 | 2021-04-09 | 长江存储科技有限责任公司 | Strength measuring method and sample |
| CN114034540A (en) * | 2021-06-21 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Chip performance testing method and device |
| CN114034540B (en) * | 2021-06-21 | 2024-05-17 | 重庆康佳光电科技有限公司 | Chip performance testing method and device |
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