CN105187019A - Transfer impedance amplifier capable of eliminating influences of non-ideal reference ground - Google Patents
Transfer impedance amplifier capable of eliminating influences of non-ideal reference ground Download PDFInfo
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- CN105187019A CN105187019A CN201510698628.8A CN201510698628A CN105187019A CN 105187019 A CN105187019 A CN 105187019A CN 201510698628 A CN201510698628 A CN 201510698628A CN 105187019 A CN105187019 A CN 105187019A
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Abstract
The invention relates to a transfer impedance amplifier capable of eliminating influences of a non-ideal reference ground, and aims at providing the transfer impedance amplifier simple in structure and good in high-frequency performance. The transfer impedance amplifier comprises a constant-current source, three field effect transistors and three resistors, wherein a traditional transfer impedance amplifier is composed of the first field effect transistor, the second field effect transistor, the first resistor, the second resistor and the constant-current source, and a virtual gain stage is composed of the third field effect transistor and the third resistor. The current polarity in the third field effect transistor is opposite to the current polarity of the first field effect transistor. By appropriately adjusting the sizes of the two field effect transistors, the current in the two field effect transistors can meet the requirements for the same amplitude and the opposite phase positions, the non-ideal reference ground becomes an ideal virtual reference ground, and the influences of the non-ideal ground on output signals are eliminated.
Description
Technical field
The present invention relates to a kind of amplifier, particularly relate to a kind of transfer impedance amplifier affected with eliminating imperfect reference.
Background technology
Amplifier is a kind of device increasing signal amplitude or power, and it is the critical elements of processing signals in automation equipment.The amplification of amplifier adopts input signal to control the energy and realizes, and needed for amplifier, power consumption is provided by the energy.For linear amplifier, output is exactly reproduction and the enhancing of input signal; For nonlinear amplifier, export and then become certain functional relation with input signal.
And in modern optical fiber telecommunications system, the structure of photodiode cascaded transmission impedance amplifier is generally used to input as the first order of optical signal receiver, due to the single-ended characteristic of photodiode, determine the unsymmetric structure of transfer impedance amplifier necessarily single-ended transfer difference.
When engineering staff carries out circuit design, ground in usual initialization circuit is desired reference ground, but in actual applications due to the impact of routing and other factors, especially in the radio frequency applications of frequency more than more than 1GHz, actually depart from desired reference ground far away with reference to ground.On the other hand, due to single-ended structure and the high-gain of transfer impedance amplifier, usually some kilohms are reached, first input signal is often coupled to imperfect with reference to ground, and then be coupled to amplifier out by imperfect reference, often cause the frequency response performance of single-ended transfer impedance amplifier input stage obviously to worsen, have a strong impact on the high frequency performance of transfer impedance amplifier.
Summary of the invention
The technical problem to be solved in the present invention is to provide that a kind of structure is simple, the transfer impedance amplifier affected with eliminating imperfect reference of the good high frequency performance that is skillfully constructed, has.
The transfer impedance amplifier that the present invention affects with can eliminating imperfect reference, wherein, comprise the first field-effect transistor, second field-effect transistor, 3rd field-effect transistor, first resistance, second resistance, 3rd resistance and constant-current source, the grid of the first field-effect transistor is connected with current input terminal, the source electrode of the first field-effect transistor accesses desirable zero potential point, the drain electrode of the first field-effect transistor is connected with one end of the first resistance, the other end of the first resistance is connected with power supply, the grid of the second field-effect transistor is connected to the drain electrode of the first field-effect transistor, the drain electrode of the second field-effect transistor is connected with power supply, the source electrode of the second field-effect transistor is connected with voltage output end, also constant-current source is provided with between voltage output end and desirable zero potential point, the grid of the 3rd field-effect transistor is connected with voltage output end, the source electrode of the 3rd field-effect transistor accesses desirable zero potential point, the drain electrode of the 3rd field-effect transistor is connected with one end of the 3rd resistance, the other end of the 3rd resistance is connected with power supply, the second resistance is connected with between current input terminal and voltage output end.
The transfer impedance amplifier that the present invention affects with can eliminating imperfect reference, the current input terminal of wherein said constant-current source is connected with voltage output end, and the current output terminal of constant-current source accesses desirable zero potential point.
The transfer impedance amplifier difference from prior art that the present invention affects with can eliminating imperfect reference is: the present invention with the addition of the 3rd field-effect transistor and the 3rd resistance on the basis of conventional transmission impedance amplifier, constitute a virtual gain stage, the grid of the 3rd field-effect transistor is connected with voltage output end, the grid of the first field-effect transistor is connected with current input terminal, make the current polarity in the 3rd field-effect transistor contrary with the current polarity in the first field-effect transistor, by regulating the size of the 3rd field-effect transistor and the first field-effect transistor, the electric current in the 3rd field-effect transistor and the electric current in the first field-effect transistor can be made to meet amplitude identical, the requirement that phase place is contrary, eliminate the imperfect impact with reference to ground, become desirable virtual reference ground with making imperfect reference, ensure that the high frequency performance of transfer impedance amplifier is unaffected.
Below in conjunction with accompanying drawing, the transfer impedance amplifier that the present invention affects with can eliminating imperfect reference is described further.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the transfer impedance amplifier that the present invention affects with can eliminating imperfect reference.
Embodiment
As shown in Figure 1, for the circuit structure diagram of the transfer impedance amplifier that the present invention affects with can eliminating imperfect reference, comprise the first field effect transistor M 1, second field effect transistor M 2, the 3rd field effect transistor M 3, first resistance R1, the second resistance R2, the 3rd resistance R3 and constant-current source I1.The grid of the first field effect transistor M 1 is connected with current input terminal 1, the source electrode of the first field effect transistor M 1 accesses desirable zero potential point GND, the drain electrode of the first field effect transistor M 1 is connected with one end of the first resistance R1, and the other end of the first resistance R1 is connected with power supply VCC.The grid of the second field effect transistor M 2 is connected with the wire between the drain electrode of the first field effect transistor M 1 and the first resistance R1, the drain electrode of the second field effect transistor M 2 is connected with power supply VCC, the source electrode of the second field effect transistor M 2 is connected with voltage output end 2, constant-current source I1 is also provided with between voltage output end 2 and desirable zero potential point GND, the current input terminal of constant-current source I1 is connected with voltage output end 2, and the current output terminal of constant-current source I1 accesses desirable zero potential point GND.The grid of the 3rd field effect transistor M 3 is connected with voltage output end 2, the source electrode of the 3rd field effect transistor M 3 accesses desirable zero potential point GND, the drain electrode of the 3rd field effect transistor M 3 is connected with one end of the 3rd resistance R3, and the other end of the 3rd resistance R3 is connected with power supply VCC.Between current input terminal 1 and voltage output end 2, be also provided with the second resistance R2, current input terminal 1 and voltage output end 2 are connected with the two ends of the second resistance R2 respectively.
The constant-current source I1 adopted in one embodiment of the present of invention can also be other adjustable current sources, as dynamic current source.
Operation principle of the present invention is: the first field effect transistor M 1, second field effect transistor M 2, first resistance R1, the syndeton of the second resistance R2 and constant-current source I1 forms traditional transfer impedance amplifier, the syndeton of the 3rd field effect transistor M 3 and the 3rd resistance R3 constitutes a dummy gain level, because the grid of the 3rd field effect transistor M 3 is connected with voltage output end, and the grid of the first field effect transistor M 1 is connected with current input terminal 1, therefore, current polarity in current polarity in 3rd field effect transistor M 3 and the first field effect transistor M 1 is contrary, the size of suitable adjustment the 3rd field effect transistor M 3 and the first field effect transistor M 1, the electric current in the 3rd field effect transistor M 3 and the electric current in the first field effect transistor M 1 can be made to meet amplitude identical, the requirement that phase place is contrary, become desirable virtual reference ground with making imperfect reference, thus make input signal couple directly to amplifier out.
The transfer impedance amplifier that the present invention affects with can eliminating imperfect reference, the basis of conventional transmission impedance amplifier with the addition of the 3rd field effect transistor M 3 and the 3rd resistance R3, constitute a virtual gain stage, the grid of the 3rd field effect transistor M 3 is connected with voltage output end 2, the grid of the first field effect transistor M 1 is connected with current input terminal 1, make the current polarity in the current polarity in the 3rd field effect transistor M 3 and the first field effect transistor M 1 contrary, by regulating the size of the 3rd field effect transistor M 3 and the first field effect transistor M 1, the electric current in the 3rd field effect transistor M 3 and the electric current in the first field effect transistor M 1 can be made to meet amplitude identical, the requirement that phase place is contrary, eliminate the imperfect impact with reference to ground, become desirable virtual reference ground with making imperfect reference, ensure that the high frequency performance of transfer impedance amplifier is unaffected.Structure of the present invention is simple, be skillfully constructed, and the impact with eliminating imperfect reference on transfer impedance amplifier, compared with prior art has obvious advantage.
Above-described embodiment is only be described the preferred embodiment of the present invention; not scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that those of ordinary skill in the art make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determines.
Claims (2)
1. the transfer impedance amplifier affected with can eliminating imperfect reference, it is characterized in that: comprise the first field-effect transistor (M1), second field-effect transistor (M2), 3rd field-effect transistor (M3), first resistance (R1), second resistance (R2), 3rd resistance (R3) and constant-current source (I1), the grid of the first field-effect transistor (M1) is connected with current input terminal (1), the source electrode of the first field-effect transistor (M1) accesses desirable zero potential point (GND), the drain electrode of the first field-effect transistor (M1) is connected with one end of the first resistance (R1), the other end of the first resistance (R1) is connected with power supply (VCC), the grid of the second field-effect transistor (M2) is connected to the drain electrode of the first field-effect transistor (M1), the drain electrode of the second field-effect transistor (M2) is connected with power supply (VCC), the source electrode of the second field-effect transistor (M2) is connected with voltage output end (2), constant-current source (I1) is also provided with between voltage output end (2) and desirable zero potential point (GND), the grid of the 3rd field-effect transistor (M3) is connected with voltage output end (2), the source electrode of the 3rd field-effect transistor (M3) accesses desirable zero potential point (GND), the drain electrode of the 3rd field-effect transistor (M3) is connected with one end of the 3rd resistance (R3), the other end of the 3rd resistance (R3) is connected with power supply (VCC), the second resistance (R2) is connected with between current input terminal (1) and voltage output end (2).
2. the transfer impedance amplifier affected with eliminating imperfect reference according to claim 1, it is characterized in that: the current input terminal of described constant-current source (I1) is connected with voltage output end (2), the current output terminal of constant-current source (I1) accesses desirable zero potential point (GND).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510698628.8A CN105187019B (en) | 2015-10-23 | 2015-10-23 | The transfer impedance amplifier that non-ideal reference ground influences can be eliminated |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510698628.8A CN105187019B (en) | 2015-10-23 | 2015-10-23 | The transfer impedance amplifier that non-ideal reference ground influences can be eliminated |
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| CN105187019A true CN105187019A (en) | 2015-12-23 |
| CN105187019B CN105187019B (en) | 2018-03-09 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343159A (en) * | 1993-02-16 | 1994-08-30 | Butler Brent K | Direct box employing hybrid vacuum tube and solid state circuitry |
| CN102594267A (en) * | 2012-02-17 | 2012-07-18 | 重庆大学 | Front-end broadband low-noise amplifier for digital television tuner |
| CN104267774A (en) * | 2014-09-01 | 2015-01-07 | 长沙景嘉微电子股份有限公司 | Simple linear power supply |
| CN205160477U (en) * | 2015-10-23 | 2016-04-13 | 南京美辰微电子有限公司 | Can eliminate imperfect line impedance amplifier of referring to ground influence |
-
2015
- 2015-10-23 CN CN201510698628.8A patent/CN105187019B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343159A (en) * | 1993-02-16 | 1994-08-30 | Butler Brent K | Direct box employing hybrid vacuum tube and solid state circuitry |
| CN102594267A (en) * | 2012-02-17 | 2012-07-18 | 重庆大学 | Front-end broadband low-noise amplifier for digital television tuner |
| CN104267774A (en) * | 2014-09-01 | 2015-01-07 | 长沙景嘉微电子股份有限公司 | Simple linear power supply |
| CN205160477U (en) * | 2015-10-23 | 2016-04-13 | 南京美辰微电子有限公司 | Can eliminate imperfect line impedance amplifier of referring to ground influence |
Non-Patent Citations (1)
| Title |
|---|
| 纽曼: "《电子电路分析与设计-半导体器件及其基本应用（第三版）》", 31 December 2009 * |
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| CN105187019B (en) | 2018-03-09 |
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