CN108880484B - Power amplifier bias circuit - Google Patents
Power amplifier bias circuit Download PDFInfo
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- CN108880484B CN108880484B CN201810603067.2A CN201810603067A CN108880484B CN 108880484 B CN108880484 B CN 108880484B CN 201810603067 A CN201810603067 A CN 201810603067A CN 108880484 B CN108880484 B CN 108880484B
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- triode
- diode
- power amplifier
- bias circuit
- base
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a power amplifier bias circuit, comprising: a power amplifier circuit and a bias circuit; the power amplifier circuit is provided with a triode Q1 and a Q2, wherein an emitter of a triode Q1 is connected to a base of Q2; the bias circuit comprises a variable resistor R1 and a diode D1 connected in series; the bias circuit is connected between the base electrode of the triode Q2 and the ground, the anode of the diode D1 is grounded, and the cathode of the diode D1 is connected with the resistor R1; the directions of the equivalent diode Dbe and the diode D1 between the emitter of the triode Q1 and the base of the triode Q2 are opposite, when the amplitude of the input signal changes, the change directions of the impedance values of the equivalent diode Dbe and the diode D1 are opposite, and the impedance values are mutually cancelled, so that the change of the total impedance value after being connected in parallel is small, and the linearity of the power amplifier is improved by adjusting the resistance value of the R1.
Description
Technical Field
The present invention relates to the field of integrated circuits, and more particularly to power amplifiers.
Background
Modern communication systems are increasingly demanding on linearity in order to achieve higher data transmission rates. The power amplifier is an important device for signal transmission, the performance of the power amplifier plays an important role in the linearity index of a communication system, and the design of a bias circuit is an important means for improving the linearity of the power amplifier.
Disclosure of Invention
The invention provides a bias circuit of a power amplifier, which can improve the linearity of the power amplifier.
In order to solve the above technical problem, the present invention provides a power amplifier bias circuit, including: a power amplifier circuit and a bias circuit;
the power amplifier circuit is provided with a transistor Q1 and a transistor Q2, wherein an emitter electrode of a transistor Q1 is connected to a base electrode of a Q2; the bias circuit comprises a variable resistor R1 and a diode D1 connected in series; the bias circuit is connected between the base of the triode Q2 and the ground, the anode of the diode D1 is grounded, and the cathode of the diode D1 is connected with the resistor R1;
the directions of the equivalent diode Dbe and the diode D1 between the emitter of the triode Q1 and the base of the triode Q2 are opposite, when the amplitude of the input signal changes, the change directions of the impedance values of the equivalent diode Dbe and the diode D1 are opposite, and the impedance values are mutually cancelled, so that the change of the total impedance value after being connected in parallel is small, and the linearity of the power amplifier is improved by adjusting the resistance value of the R1.
In a preferred embodiment: the emitter of the triode Q1 is connected with the base of the Q2 through a resistor Rb.
In a preferred embodiment: the base of the transistor Q2 is connected to the signal input node I N through a capacitor C1, and the collector of the transistor Q2 is connected to the signal output node OUT.
In a preferred embodiment: the collector of the triode Q2 is also connected with a power supply through an inductor L1, the base of the triode Q1 is connected with a signal input end node, and the collector is connected with the power supply.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the invention provides a power amplifier bias circuit, wherein the directions of an equivalent diode Dbe and a bias circuit diode D1 between an emitter of a triode Q1 and a base of a triode Q2 of a power amplifier are opposite, when the amplitude of an input signal changes, the change directions of impedance values of an equivalent diode Dbe and a diode D1 are opposite and mutually offset, so that the change of the total impedance value after parallel connection is small, and the linearity of the power amplifier is improved by adjusting the resistance value of R1.
Drawings
Fig. 1 is a circuit diagram of a preferred embodiment of the present invention.
Detailed Description
The present invention will be further described with reference to the following examples.
Referring to fig. 1, a power amplifier bias circuit includes: a power amplifier circuit and a bias circuit;
the power amplifier circuit is provided with a transistor Q1 and a transistor Q2, wherein an emitter electrode of a transistor Q1 is connected to a base electrode of a Q2; the bias circuit comprises a variable resistor R1 and a diode D1 connected in series; the bias circuit is connected between the base electrode of the triode Q2 and the ground, the anode of the diode D1 is grounded, and the cathode of the diode D1 is connected with the resistor R1;
The emitter of the triode Q1 is connected with the base of the transistor Q2 through a resistor Rb. The base of the triode Q2 is connected with the signal input end node IN through a capacitor C1, and the collector of the triode Q2 is connected with the signal output end node OUT. The collector of the triode Q2 is also connected with a power supply through an inductor L1, the base of the triode Q1 is connected with a signal input end node, and the collector is connected with the power supply.
In the power amplifier bias circuit, the directions of the equivalent diode Dbe and the bias circuit diode D1 between the emitter of the triode Q1 and the base of the triode Q2 of the power amplifier are opposite, when the amplitude of an input signal changes, the change directions of the impedance values of the equivalent diode Dbe and the diode D1 are opposite and mutually offset, so that the change of the total impedance value after being connected in parallel is small, and the linearity of the power amplifier is improved by adjusting the resistance value of the R1
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (4)
1. A power amplifier bias circuit, comprising: a power amplifier circuit and a bias circuit;
the power amplifier circuit is provided with a triode Q1 and a Q2, wherein an emitter of a triode Q1 is connected to a base of Q2; the bias circuit comprises a variable resistor R1 and a diode D1 connected in series; the bias circuit is connected between the base electrode of the triode Q2 and the ground, the anode of the diode D1 is grounded, and the cathode of the diode D1 is connected with the resistor R1;
the directions of the equivalent diode Dbe and the diode D1 between the emitter of the triode Q1 and the base of the triode Q2 are opposite, when the amplitude of an input signal changes, the resistance values of the equivalent diode Dbe and the diode D1 change in opposite directions and are mutually cancelled, so that the change of the total resistance value after being connected in parallel is small, and the linearity of the power amplifier is improved by adjusting the resistance value of the R1.
2. A power amplifier bias circuit as claimed in claim 1, wherein: the emitter of the triode Q1 is connected with the base of the Q2 through a resistor Rb.
3. The power amplifier biasing circuit of claim 2, wherein: the base of the transistor Q2 is connected to the signal input node I N through a capacitor C1, and the collector of the transistor Q2 is connected to the signal output node OUT.
4. A power amplifier biasing circuit as claimed in claim 3, wherein: the collector of the triode Q2 is also connected with a power supply through an inductor L1, the base of the triode Q1 is connected with a signal input end node, and the collector is connected with the power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810603067.2A CN108880484B (en) | 2018-06-12 | 2018-06-12 | Power amplifier bias circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810603067.2A CN108880484B (en) | 2018-06-12 | 2018-06-12 | Power amplifier bias circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108880484A CN108880484A (en) | 2018-11-23 |
| CN108880484B true CN108880484B (en) | 2022-06-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810603067.2A Active CN108880484B (en) | 2018-06-12 | 2018-06-12 | Power amplifier bias circuit |
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| CN (1) | CN108880484B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112017007373T5 (en) * | 2017-03-28 | 2019-12-05 | Mitsubishi Electric Corporation | Diodenlinearisierer |
| CN109951162B (en) * | 2019-03-08 | 2023-04-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| CN111510078B (en) * | 2020-05-13 | 2022-08-23 | 广州慧智微电子股份有限公司 | Impedance adjusting circuit and method, bias circuit structure and amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101079598A (en) * | 2006-04-10 | 2007-11-28 | 松下电器产业株式会社 | High-frequency power amplifier and communication device |
| JP2008283407A (en) * | 2007-05-09 | 2008-11-20 | Toshiba Corp | Power amplifier |
| CN201571021U (en) * | 2010-01-18 | 2010-09-01 | 惠州市正源微电子有限公司 | Power amplifier biasing circuit with temperature compensation function |
| CN105515539A (en) * | 2015-12-22 | 2016-04-20 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensating circuit and communication terminal |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9337787B2 (en) * | 2013-06-19 | 2016-05-10 | Rf Micro Devices, Inc. | Power amplifier with improved low bias mode linearity |
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2018
- 2018-06-12 CN CN201810603067.2A patent/CN108880484B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101079598A (en) * | 2006-04-10 | 2007-11-28 | 松下电器产业株式会社 | High-frequency power amplifier and communication device |
| JP2008283407A (en) * | 2007-05-09 | 2008-11-20 | Toshiba Corp | Power amplifier |
| CN201571021U (en) * | 2010-01-18 | 2010-09-01 | 惠州市正源微电子有限公司 | Power amplifier biasing circuit with temperature compensation function |
| CN105515539A (en) * | 2015-12-22 | 2016-04-20 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensating circuit and communication terminal |
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| Publication number | Publication date |
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| CN108880484A (en) | 2018-11-23 |
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