CN105185741A - 一种coms像素电路基板回收工艺 - Google Patents
一种coms像素电路基板回收工艺 Download PDFInfo
- Publication number
- CN105185741A CN105185741A CN201510466094.6A CN201510466094A CN105185741A CN 105185741 A CN105185741 A CN 105185741A CN 201510466094 A CN201510466094 A CN 201510466094A CN 105185741 A CN105185741 A CN 105185741A
- Authority
- CN
- China
- Prior art keywords
- polishing
- circuit substrate
- recovery process
- image element
- element circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 29
- 238000005498 polishing Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims description 45
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 230000002000 scavenging effect Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 abstract description 5
- 238000007689 inspection Methods 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 3
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 3
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000004134 energy conservation Methods 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 nitrogen ion Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 206010016825 Flushing Diseases 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510466094.6A CN105185741B (zh) | 2015-07-31 | 2015-07-31 | 一种coms像素电路基板回收工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510466094.6A CN105185741B (zh) | 2015-07-31 | 2015-07-31 | 一种coms像素电路基板回收工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105185741A true CN105185741A (zh) | 2015-12-23 |
CN105185741B CN105185741B (zh) | 2018-08-28 |
Family
ID=54907733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510466094.6A Active CN105185741B (zh) | 2015-07-31 | 2015-07-31 | 一种coms像素电路基板回收工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105185741B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112404100A (zh) * | 2020-11-03 | 2021-02-26 | 福建晶安光电有限公司 | 一种滤波器基片的回收工艺 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6451696B1 (en) * | 1998-08-28 | 2002-09-17 | Kabushiki Kaisha Kobe Seiko Sho | Method for reclaiming wafer substrate and polishing solution compositions therefor |
CN1378235A (zh) * | 2001-03-30 | 2002-11-06 | 华邦电子股份有限公司 | 回收芯片的清洗方法 |
CN1806949A (zh) * | 2006-02-17 | 2006-07-26 | 刘培东 | 半导体器件与集成电路硅单晶废弃片的回收利用方法 |
-
2015
- 2015-07-31 CN CN201510466094.6A patent/CN105185741B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6451696B1 (en) * | 1998-08-28 | 2002-09-17 | Kabushiki Kaisha Kobe Seiko Sho | Method for reclaiming wafer substrate and polishing solution compositions therefor |
CN1378235A (zh) * | 2001-03-30 | 2002-11-06 | 华邦电子股份有限公司 | 回收芯片的清洗方法 |
CN1806949A (zh) * | 2006-02-17 | 2006-07-26 | 刘培东 | 半导体器件与集成电路硅单晶废弃片的回收利用方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112404100A (zh) * | 2020-11-03 | 2021-02-26 | 福建晶安光电有限公司 | 一种滤波器基片的回收工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN105185741B (zh) | 2018-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160913 Address after: 518131 Guangdong Province, Shenzhen city Longhua District streets Minzhi Avenue Tao technology exhibition building block A room 1703 Applicant after: Shenzhen Zhonghe Technology Co., Ltd. Address before: 518000, Shenzhen Yantian District, Guangdong Province, Sha Tau Kok Street Industrial Street East, Yantian International Creative port 2 5E Applicant before: SHENZHEN XINGHUO HUIHUANG SYSTEM ENGINEERING CO., LTD. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191218 Address after: 5 / F South-2, building B20, Hengfeng Industrial City, 739 Zhoushi Road, Hezhou community, Hangcheng street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xiangyang Amperex Technology Limited Address before: 518131 Guangdong Province, Shenzhen city Longhua District streets Minzhi Avenue Tao technology exhibition building block A room 1703 Patentee before: Shenzhen Wanzhong He Technology Co., Ltd. |
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TR01 | Transfer of patent right |