CN105182462B - A kind of middle infrared polarization converter based on double-rod antenna structure - Google Patents
A kind of middle infrared polarization converter based on double-rod antenna structure Download PDFInfo
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- CN105182462B CN105182462B CN201510695811.2A CN201510695811A CN105182462B CN 105182462 B CN105182462 B CN 105182462B CN 201510695811 A CN201510695811 A CN 201510695811A CN 105182462 B CN105182462 B CN 105182462B
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- rod antenna
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- polarization converter
- middle infrared
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
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- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of middle infrared polarization converter based on double-rod antenna structure, the cell array that device is made up of multiple unit components, each unit component is followed successively by the highly doped silicon chip substrate of n types, copper film, silica separation layer, double-rod antenna from top to bottom.This polarization converter centre wavelength is 9.58 μm, and optical rotation rate PCR is more than 80%, the 77% of wavelength, superior performance centered on bandwidth.
Description
Technical field
The invention belongs to wireless communication technique field, and in particular to a kind of middle infrared polarization based on double-rod antenna structure turns
Parallel operation.
Background technology
In infrared (3-30 microns of wavelength) be frequency spectrum resource important among whole electromagnetic spectrum.First, much and the mankind
The closely bound up gaseous molecular of environment, disease (such as ozone O3, carbon dioxide CO2Deng) produced by molecule itself vibration or rotation
Fingerprint is absorbed just in middle-infrared band, and other any wave bands of these molecules fingerprint absorptance infrared in are high several
Magnitude.Secondly, the temperature of all in nature higher than absolute zero (- 273 DEG C) object all the time produce heat radiation,
Its emittance also concentrates on middle-infrared band.Further, since various particles in earth atmosphere are to the absorption of electromagnetic wave and dissipate
Penetrate, only in infrared special wave band could pass through atmosphere, and formed two it is main in infrared atmospheric windows mouthful, i.e. wavelength 3.5-
5.5 microns and 8-12 microns.
In view of the above-mentioned strong characteristic absorption of molecule, hot body radiation and air transparent window these just have in middle-infrared band
Peculiar property, middle infrared waves have wide in material detection, infrared imaging, broadband communications, spectroscopy and military confrontation field
Wealthy application prospect.Such as middle infrared technique can be used to detect all kinds of gaseous moleculars, astronomically be used for observing by zodiacal dust
Angstrom celestial body sheltered, medically for diagnosing human tumor, and is militarily applied to all kinds of safety inspections and confrontation skill
Art etc..
The large-scale practical application of middle infrared technique depends on the development of Primary Component, including laser, detector, modulation
Device and types of functionality device.Be currently based on the QCL of sub-band transition in electronic band have small volume, power it is high,
Working and room temperature, it is tunable the features such as, it has also become the main coherent source of middle-infrared band；In terms of detector, based on mercury cadmium telluride
(HgCdTe) single pixel or focus planar detector has unrivaled heat sensitivity, it has also become infrared spy in current main-stream
Survey technology, while also successively occurring in that quantum well detector (QWIP), quantum dot (QDIP) and InAs/GaSb Second-Types are super brilliant
The new technologies such as lattice detector simultaneously gradually move towards practical.
In addition to the above-mentioned middle infrared laser reached its maturity and detector, polarization converter is also the one of middle infrared technique
Item Primary Component.Polarization converter can be regulated and controled or be modulated with the polarization direction of centering infrared waves, be it is infrared it is relevant detection, partially
Shake the important and essential elements in field such as multiplexing wireless telecommunications.
In the prior art, French Quentin L é vesque et al. propose a kind of based on L-type plasma flat antenna
Polarization converter.The technical scheme uses two local plasmon bulk-modes of L-type metal antenna, realizes the two of 1 μm of bandwidth
The conversion of the linearly polarized light of individual vertical direction, but the wave-length coverage of this polarization converter is limited in 3 μm of -4.4 μ of short wavelength range
M, and the superposition of only two local plasmon bulk-modes, polarization bandwidth are smaller, centered on wavelength 38%.
The content of the invention
It is an object of the invention to provide a kind of middle infrared polarization converter based on double-rod antenna structure, this optical rotation
Parallel operation centre wavelength be 9.58 μm, optical rotation rate PCR more than 80%, the 77% of wavelength centered on bandwidth, performance is more excellent.
The present invention is as follows using technical scheme：
The invention provides a kind of middle infrared polarization converter based on double-rod antenna structure, it is made up of multiple unit components
Cell array, each unit component is followed successively by the highly doped silicon chip substrate of n-type, copper film, silica isolation from top to bottom
Layer, double-rod antenna.
Further, the cell matrix is 1mm × 1mm cell array, and the cycle of each unit component is 5 μ
m。
Further, the thickness of the substrate is 0.4-0.6mm, and the thickness of the copper film is 0.2-0.4 μm, the titanium dioxide
Silicon separation layer thickness is 0.8-1.2 μm, and the thickness in the double-rod antenna per spike antenna is 0.1-0.3 μm, length is 3.2-3.6
μm, width be 0.9-1.05 μm, the spacing between two spike antennas is 0.08-0.12 μm.
Preferably, the thickness of the substrate is 0.5mm, and the thickness of the copper film is 0.3 μm, the silica separation layer
Thickness is 1.036 μm, and the thickness in the double-rod antenna per spike antenna is 0.2 μm, length is 3.5 μm, width is 0.95 μm, two
Spacing between spike antenna is 0.1 μm.
The present invention theoretical foundation and have the beneficial effect that：
Theoretical foundation：
Electromagnetic wave belongs to shear wave, and its electric vector, magnetic vector and wave vector direction meet the right-hand rule.Wherein, electric vector is
Cause carrier collective motion in conductor and cause the main cause of dielectric polorization.Therefore, it can by incident electromagnetic wave and
The ratio of reflection electromagnetic wave electric-field intensity defines reflectivity.Two mutually orthogonal polarizations can be decomposed into view of electromagnetic wave
Direction, reflectivity can be written as the form of reflection matrix
Wherein
X, y are two mutually orthogonal linear polarization electromagnetic wave directions, and i, r represents incident electromagnetic wave and reflection electromagnetism respectively
Ripple.RmnEqual to reflection electromagnetic wave m directions electric field component EmrWith incident electromagnetic wave n directions electric field component EniRatio,For phase
Position.According to this definition RxyWith RxyBetween phase difference be
If incident electromagnetic wave is the linear polarization electromagnetic wave in y directions, then optical rotation rate PCR can be written as
RxyWhen=0, PCR=0, it is meant that the incident light of y directions polarization is after reflection without x directions polarised light, no polarization
Transition effects.RyyWhen=0, PCR=1, it is meant that the incident light of y directions polarization without y directions polarised light, that is, owns after reflection
Reflected light is x directions polarization, realizes 100% conversion efficiency of the linearly polarized light of mutually perpendicular direction.0<PCR<When 1, instead
Penetrate light and contain two kinds of polarization direction components, be elliptically polarized light.Polarization is realized because PCR directly reflects flat plane antenna
Level, therefore it is used as the main performance index of polarization converter.
Beneficial effects of the present invention：
This technology invention employs double-rod antenna structure, the number of overlay model is added, it is achieved thereby that broadband is wider
The conversion for being mutually perpendicular to linearly polarized light, wavelength has been made for 7 μm -16 μm, centre wavelength turns for 9.58 μm of middle infrared polarization
Parallel operation, the optical rotation rate of this middle infrared polarization converter has exceeded 80%, and bandwidth of operation reaches the 77% of centre wavelength, is
More than twice of prior art.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is schematic structural view of the invention；
Fig. 2 is invention unit device architecture schematic diagram；
Fig. 3 is invention unit device side diagram；
Fig. 4 be the embodiment of the present invention 1 in reflected light y directions polarized component reflectance factor and x directions polarized component it is anti-
Penetrate coefficient, and PCR value change curve；
Fig. 5 is the corresponding Electric Field Distribution of A points in the medium wave of the embodiment of the present invention 1 a length of 14.2 μm (frequency 21.1THz), Fig. 4
Figure；
Fig. 6 is the corresponding Electric Field Distribution of B points in the medium wave of the embodiment of the present invention 1 a length of 9.8 μm (frequency 30.6THz), Fig. 4
Figure；
Fig. 7 is the corresponding distribution map of the electric field of C points in the medium wave of the embodiment of the present invention 1 a length of 7 μm (frequency 42.5THz), Fig. 4；
Fig. 8 be the embodiment of the present invention 2 in reflected light y directions polarized component reflectance factor and x directions polarized component it is anti-
Penetrate coefficient, and PCR value change curve；
In figure：1st, unit component；2nd, substrate；3rd, copper film；4th, silica separation layer；5th, double-rod antenna；6th, y directions are polarized
The reflectance factor of component；7th, the reflectance factor of x directions polarized component；8th, optical rotation rate PCR value.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1, as shown in FIG. 1 to 3, the 1mm × 1mm cell arrays being made up of multiple unit components, unit component
Cycle be 5 μm, unit component substrate is the thickness 0.5mm highly doped silicon chip of n-type, and electron beam evaporation plating is used on silicon chip
There is 0.3 μm of copper, plasma enhanced chemical vapor deposition method (PECVD) is used above with 1.036 μm of titanium dioxide in copper film
Silicon separation layer, 0.2 μm of the thickness topmost made using electron beam reticle and metal deposition, long 3.5 μm, 0.95 μm of width
Double-rod antenna, the spacing between double-rod is 0.1 μm.
Fig. 4 gives the reflectance factor of reflected light y directions polarized component and the reflectance factor of x directions polarized component, and
PCR value.As seen from the figure, in the range of centre wavelength is 9.58 μm of 7 μm -16 μm (19.2THz-43.4THz), polarization
Rate PCR value is more than 80%.Bandwidth reaches the 77% of centre wavelength, and this performance is more than twice of prior art.In addition, 14.2
PCR at μm (A points), 9.8 μm (B points), 7 μm (C points) three peak values is close to 100%, it is meant that the incident light of these three frequencies
Excite after incident light is absorbed by the antenna completely at the local plasmon resonance body in double-rod antenna, formant by the micro- of surface
Micro-nano structure gives off the x directions linearly polarized light perpendicular to former polarization direction.Fig. 5~Fig. 7 is that tri- frequencies of A, B, C are corresponding respectively
Electric Field Distribution.It can be seen that the corresponding response position of three frequencies and Electric Field Distribution are variant.This result shows,
The result of the resonance mode for realizing that exactly three frequency spacing the are appropriate superposition of wideband polarization conversion.And in the prior art, L-type
The relative bandwidth that antenna is excited in response range, only after two formants, therefore superposition is smaller.Exactly because the present invention is adopted
With appropriate double-rod antenna structure, the number of overlay model is added, to be mutually perpendicular to line inclined it is achieved thereby that broadband is broader
Shake the conversion of light.
Embodiment 2, the polarization converter of the invention based on double-rod antenna structure can also require to promote according to concrete application
Other infrared any wave bands in.Fig. 8 gives one embodiment.On the basis of embodiment 1, if size by antenna etc.
Scale smaller 50%, the operation wavelength of polarization converter will be changed into shorter 3.5 μm -7.8 of wavelength from 7 μm -16 μm (Fig. 8 dotted lines)
μ m (Fig. 8 solid lines), and keep wide bandwidth advantage constant the 77% of wavelength (centered on).
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (3)
1. a kind of middle infrared polarization converter based on double-rod antenna structure, it is characterised in that：It is made up of multiple unit components
Cell array is constituted, each unit component be followed successively by from top to bottom the highly doped silicon chip substrate of n-type, copper film, silica every
Absciss layer, double-rod antenna, the thickness of the substrate is 0.4-0.6mm, and the thickness of the copper film is 0.2-0.4 μm, the titanium dioxide
Silicon separation layer thickness is 0.8-1.2 μm, and the thickness in the double-rod antenna per spike antenna is 0.1-0.3 μm, length is 3.2-3.6
μm, width be 0.9-1.05 μm, the spacing between two spike antennas is 0.08-0.12 μm.
2. a kind of middle infrared polarization converter based on double-rod antenna structure according to claim 1, it is characterised in that：Institute
The cell array that cell matrix is 1mm × 1mm is stated, the cycle of each unit component is 5 μm.
3. a kind of middle infrared polarization converter based on double-rod antenna structure according to claim 1, it is characterised in that：Institute
The thickness for stating substrate is 0.5mm, and the thickness of the copper film is 0.3 μm, and the silica separation layer thickness is 1.036 μm, institute
State the thickness in double-rod antenna per spike antenna be 0.2 μm, length be 3.5 μm, width be 0.95 μm, the spacing between two spike antennas
For 0.1 μm.
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| CN201510695811.2A CN105182462B (en) | 2015-10-23 | 2015-10-23 | A kind of middle infrared polarization converter based on double-rod antenna structure |
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| CN105182462B true CN105182462B (en) | 2017-10-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105511097B (en) * | 2015-12-30 | 2018-03-27 | 武汉科技大学 | A kind of reflective-mode broadband linear polarization converter based on Meta Materials |
| CN106099387B (en) * | 2016-06-08 | 2018-06-01 | 安徽枫慧金属股份有限公司 | The graphene polarization converter that three frequencies work is tunable |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124382A (en) * | 2008-06-19 | 2011-07-13 | 雷文布里克有限责任公司 | Optical metapolarizer device |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
| CN104993250A (en) * | 2015-05-29 | 2015-10-21 | 华中科技大学 | Infrared super enhanced collection antenna based on electromagnetically induced transparency |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006311421A (en) * | 2005-05-02 | 2006-11-09 | Nippon Hoso Kyokai <Nhk> | Polarization converter and antenna device using the same |
| US7907275B2 (en) * | 2009-06-19 | 2011-03-15 | Hewlett-Packard Development Company, L.P. | Type selective and polarization selective device for Raman spectroscopy |
| WO2014171992A2 (en) * | 2013-01-30 | 2014-10-23 | The Trustees Of Columbia University In The City Of New York | System, method and computer-accessible medium for depth of field imaging for three-dimensional sensing utilizing a spatial light modulator microscope arrangement |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124382A (en) * | 2008-06-19 | 2011-07-13 | 雷文布里克有限责任公司 | Optical metapolarizer device |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
| CN104993250A (en) * | 2015-05-29 | 2015-10-21 | 华中科技大学 | Infrared super enhanced collection antenna based on electromagnetically induced transparency |
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