CN105140348B - 多晶太阳能电池背部钝化工艺 - Google Patents
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- 238000002161 passivation Methods 0.000 title claims abstract description 7
- 238000005516 engineering process Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000002253 acid Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000011574 phosphorus Substances 0.000 claims abstract description 8
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 12
- 241000628997 Flos Species 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000005715 Fructose Substances 0.000 claims description 6
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 6
- 229930091371 Fructose Natural products 0.000 claims description 6
- 239000001913 cellulose Substances 0.000 claims description 6
- 229920002678 cellulose Polymers 0.000 claims description 6
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 6
- 239000001509 sodium citrate Substances 0.000 claims description 6
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 6
- CYDQOEWLBCCFJZ-UHFFFAOYSA-N 4-(4-fluorophenyl)oxane-4-carboxylic acid Chemical compound C=1C=C(F)C=CC=1C1(C(=O)O)CCOCC1 CYDQOEWLBCCFJZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920005610 lignin Polymers 0.000 claims description 4
- 239000001540 sodium lactate Substances 0.000 claims description 4
- 229940005581 sodium lactate Drugs 0.000 claims description 4
- 235000011088 sodium lactate Nutrition 0.000 claims description 4
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 235000010265 sodium sulphite Nutrition 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229920001732 Lignosulfonate Polymers 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- UKTDQTGMXUHPIF-UHFFFAOYSA-N [Na].S(O)(O)=O Chemical compound [Na].S(O)(O)=O UKTDQTGMXUHPIF-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
本发明涉及太阳能电池生产领域,具体是一种多晶太阳能电池背部钝化工艺。顺序进行酸制绒、硼扩散、背部钝化、刻蚀、第一次去PSG、磷扩散、激光刻槽、第二次去PSG、正面钝化、丝网印刷,在酸制绒过程使用添加剂,硼扩散过程,N2流量20slm,激光刻槽中开槽宽度为1.9毫米,采用双线200kHz的激光频率,5 m/s的传送速度,32A电流,进行激光刻槽,刻蚀需要手动装卸片,电池正面向下,开启水膜,HF酸浓度为7%,滚轮速度为1m/min,刻蚀深度1.0‑1.2um。本发明高效多晶效率可提升0.6%以上,达到预期目的,组件封装损耗为0.5%左右,符合损耗要求。
Description
技术领域
本发明涉及太阳能电池生产领域,具体是一种多晶太阳能电池背部钝化工艺。
背景技术
目前多晶酸制绒正常工艺没有使用添加剂,造成多晶制绒面的均匀性差,亮片、黑丝等问题,工艺过程不合理,降低硅片了反射率。
发明内容
本发明所要解决的技术问题是:如何提高多晶制绒面的均匀性,减少亮片、黑丝等问题,提高硅片反射率,进而提高多晶太阳能电池的效率。
本发明所采用的技术方案是:多晶太阳能电池背部钝化工艺,顺序进行酸制绒、硼扩散、背部钝化、刻蚀、第一次去PSG、磷扩散、激光刻槽、第二次去PSG、正面钝化、丝网印刷,在酸制绒过程使用添加剂,添加剂中含:聚乙二醇10-20克/升,异丙醇20-50克/升,碳酸钠0-2克/升,氢氧化钠0-1克/升,柠檬酸钠0-1克/升,果糖钠0-1克/升,纤维素0-3克/升,亚硫酸钠10-20克/升,乳酸钠5-10克/升,木质素磺酸盐0-3克/升,余量为水,其中碳酸钠、氢氧化钠、柠檬酸钠、果糖钠浓度之和为1-3克/升,纤维素与木质素磺酸盐浓度之和为1-3克/升。硼扩散过程,N2流量20slm,激光刻槽中开槽宽度为1.9毫米,采用双线200kHz的激光频率, 5 m/s的传送速度, 32A电流,进行激光刻槽,刻蚀需要手动装卸片,电池正面向下,开启水膜,HF酸浓度为7%,滚轮速度为1m/min,刻蚀深度1.0-1.2um。
本发明的有益效果是:通过本发明多晶电池片转换效率比常规工艺至少高出0.5%(保守估计);拉力、衰减性能符合要求;色差可控制。
具体实施方式
多晶太阳能电池背部钝化工艺,顺序进行酸制绒、硼扩散、背部钝化、刻蚀、第一次去PSG、磷扩散、激光刻槽、第二次去PSG、正面钝化、丝网印刷,在酸制绒过程使用添加剂,添加剂中含:聚乙二醇15克/升,异丙醇30克/升,1克/升,氢氧化钠1克/升,纤维素2克/升,亚硫酸钠11克/升,乳酸钠8克/升,木质素磺酸盐1克/升,余量为水。硼扩散过程,N2流量20slm,激光刻槽中开槽宽度为1.9毫米,采用双线200kHz的激光频率, 5 m/s的传送速度,32A电流,进行激光刻槽,刻蚀需要手动装卸片,电池正面向下,开启水膜,HF酸浓度为7%,滚轮速度为1m/min,刻蚀深度1.0-1.2um。
硼扩散均匀性实验
实验进一步对硼扩散配方中的工艺时间,气体流量,氮气流量及氧化时间进行不同的组合,测试硼扩散后的方阻均匀性。硼扩散配方列表如下:
表一
实验结果显示沉积时N2流量太大或者太小都会增大方阻;沉积时最佳N2流量是20slm;
制绒刻蚀深度实验
表二中,A组是常规多晶工艺,B组和D组工艺流程如下:酸制绒-硼扩散-刻蚀(聚晶设备)-背部钝化-第一次去PSG-磷扩散-激光刻槽(背面)-第二次去PSG-正面钝化-丝网印刷;C组工艺流程如下:酸制绒-硼扩散-背面钝化-刻蚀(聚晶设备)-第一次去PSG-磷扩散-背面激光刻槽-第二次去PSG-正面钝化-丝网印刷。B组用C-TEX设备,D组用Intex设备。
表二
实验结论:实验组比对比组最低高出0.62%,最高高出0.79%;C组比B、D组效率高出0.1%,背面镀膜后再进行聚晶刻蚀,饱和了B扩散层,本发明顺序的聚晶刻蚀最佳。
3.重复验证实验
为了对上次实验进行重复测试,设计了本次实验。ABC三组为XXS2硅片,DEF为XXS3硅片,A组和D组是常规多晶工艺,B组和E组工艺流程如下:酸制绒-硼扩散-刻蚀(聚晶设备)-背面钝化-第一次去PSG-磷扩散-激光刻槽(背面)-第二次去PSG-正面钝化-丝网印刷;C组和F组工艺流程如下:酸制绒-硼扩散-背面钝化-刻蚀(聚晶设备)-第一次去PSG-磷扩散-激光刻槽(背面)-第二次去PSG-正面钝化-丝网印刷。A、B、C组用C-TEX设备,D、E、F组用Intex设备。实验结果如下所示:
表3
实验结论:在刻蚀深度达到4.1μm时,效率仍然可以达到要求;高效工艺比普通工艺提高了0.64%,最高提升了0.8%;实验是可重复的,本发明顺序效果最佳。
具体实施过程,按照本发明工艺流程进行,沉积时间为15分钟,最高温度960℃,工艺时间1小时30分,装载方式为正背正,目前靠手动装卸。聚晶清洗(刻蚀)需要手动装卸片,电池正面向下,开启水膜,HF酸质量浓度为7%,滚轮速度为1m/min,刻蚀深度1.0-1.2um,半成品外观要求正面清洗干净,背面保留硼硅玻璃,装片时硅片反面插入载体正方向。背面钝化工艺时间为1900秒,卸载后需要将硅片方向从载体中翻转,随后进去PSG进行1min清洗。PSG回复清洗4min30s,进入PECVD常规多晶工艺进行镀膜。背激光采用双线200kHz的激光频率, 5 m/s的传送速度, 32A,进行激光刻槽,烧结温度为885摄氏度。添加剂中含:聚乙二醇10-20克/升,异丙醇20-50克/升,碳酸钠0-2克/升,氢氧化钠0-1克/升,柠檬酸钠0-1克/升,果糖钠0-1克/升,纤维素0-3克/升,亚硫酸钠10-20克/升,乳酸钠5-10克/升,木质素磺酸盐0-3克/升,余量为水,其中碳酸钠、氢氧化钠、柠檬酸钠、果糖钠浓度之和为1-3克/升,纤维素与木质素磺酸盐浓度之和为1-3克/升。酸制绒过程使用添加剂可以提高多晶效率,本具体过程高效多晶效率可提升了1.5%以上,达到预期目的,组件封装损耗为0.5%左右,符合损耗要求。
Claims (1)
1.多晶太阳能电池背部钝化工艺,其特征在于:顺序进行酸制绒、硼扩散、背部钝化、刻蚀、第一次去BSG、磷扩散、激光刻槽、第二次去PSG、正面钝化、丝网印刷,在酸制绒过程使用添加剂,硼扩散过程,N2流量20slm,激光刻槽中开槽宽度为1.9毫米,采用双线200kHz的激光频率,5 m/s的传送速度, 32A电流,进行激光刻槽,刻蚀需要手动装卸片,电池正面向下,开启水膜,HF酸浓度为7%,滚轮速度为1m/min,刻蚀深度1.0-1.2um,所述添加剂中:聚乙二醇10-20克/升,异丙醇20-50克/升,碳酸钠0-2克/升,氢氧化钠0-1克/升,柠檬酸钠0-1克/升,果糖钠0-1克/升,纤维素0-3克/升,亚硫酸钠10-20克/升,乳酸钠5-10克/升,木质素磺酸盐0-3克/升,余量为水,其中碳酸钠、氢氧化钠、柠檬酸钠、果糖钠浓度之和为1-3克/升,纤维素与木质素磺酸盐浓度之和为1-3克/升。
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CN104733555A (zh) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | 一种高效n型双面太阳电池及其制备方法 |
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CN104576831A (zh) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | 一种单晶硅片无醇制绒工艺及其制绒添加剂 |
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